Joint ICTP-IAEA Workshop on Physics of Radiation Effect and its Simulation for Non-Metallic Condensed Matter.
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1 Joint ICTP-IAEA Workshop on Physics of Radiation Effect and its Simulation for Non-Metallic Condensed Matter August 2012 Ion beam lithography - I Paolo Olivero University of Turin Italy
2 Ion beam lithography I Paolo Olivero Physics Department NIS Centre of Excellence University of Torino INFN Section of Torino CNISM Consortium olivero@to.infn.it ICTP IAEA Workshop, Trieste, August
3 Outline Introduction Ion matter interaction MeV ions kev ions Ion beam lithography conven onal techniques MeV ions kev ions Case studies MeV ion beam lithography resists silicon other materials single ion tracks kev ion beam lithography FIB milling FIB assisted deposition Helium ion microscope 2
4 Outline Introduction Ion matter interaction MeV ions kev ions Ion beam lithography conven onal techniques MeV ions kev ions Case studies MeV ion beam lithography resists silicon other materials single ion tracks kev ion beam lithography FIB milling FIB assisted deposition Helium ion microscope 3
5 Ion matter interaction: MeV ions 1 MeV H + in Si Longitudinal trajectory Lateral : SRIM Monte Carlo code 4
6 Ion matter interaction: MeV ions 1 MeV H + in Si Longitudinal range Lateral : SRIM Monte Carlo code 5
7 Ion matter interaction: MeV ions 1 MeV H + in Si Electronic energy loss Nuclear energy : SRIM Monte Carlo code 6
8 Ion matter interaction: MeV ions 1 MeV H + in Si Sputtering yield: 0 atoms / : SRIM Monte Carlo code 7
9 Outline Introduction Ion matter interaction MeV ions kev ions Ion beam lithography conven onal techniques MeV ions kev ions Case studies MeV ion beam lithography resists silicon other materials single ion tracks kev ion beam lithography FIB milling FIB assisted deposition Helium ion microscope 8
10 Ion matter interaction: kev ions 30 kev Ga + in Si Longitudinal trajectory Lateral : SRIM Monte Carlo code 9
11 Ion matter interaction: kev ions 30 kev Ga + in Si Longitudinal range Lateral : SRIM Monte Carlo code 10
12 Ion matter interaction: kev ions 30 kev Ga + in Si Electronic energy loss Nuclear energy : SRIM Monte Carlo code 11
13 Ion matter interaction: kev ions 30 kev Ga + in Si Sputtering yield: 2.17 atoms / : SRIM Monte Carlo code 12
14 Outline Introduction Ion matter interaction MeV ions kev ions Ion beam lithography conven onal techniques MeV ions kev ions Case studies MeV ion beam lithography resists silicon other materials single ion tracks kev ion beam lithography FIB milling FIB assisted deposition Helium ion microscope 13
15 Conventional lithography techniques Lithography in positive and negative resists 14
16 Conventional lithography techniques Photolithography schematics photoresists: PPMA, PMGI, SU 8, etc. very large scale integration (VLSI) minimum feature size: mask aligner (λ=365 nm) depth of focus: 15
17 Conventional lithography techniques Electron beam lithography schematics direct write mask less process resists: resolution: ZEP 520, PMMA e beam size ( nm) beam target interaction electron beam lithograph (SEM) other issues: scattering proximity effects charging best resolution: nm 16
18 Outline Introduction Ion matter interaction MeV ions kev ions Ion beam lithography conven onal techniques MeV ions kev ions Case studies MeV ion beam lithography resists silicon other materials single ion tracks kev ion beam lithography FIB milling FIB assisted deposition Helium ion microscope 17
19 Ion beam lithography: MeV ions as for EBL: scanning focused/collimated beam mask less direct writing typical EBL resists ion implantation (doping, luminescent centers, ) Processes change in chemical reactivity in a latent image local modification of physical (electrical, optical, magnetic, ) properties 18
20 Ion beam lithography: MeV ions Tools electronic interac on: ioniza on chemical modifica on nuclear interac on: damage structural modifica on 19
21 Ion beam lithography: MeV ions Tools electronic interac on: ioniza on chemical modifica on nuclear interac on: damage structural modifica on 20
22 Ion beam lithography: MeV ions Key issue: beam target interaction 2 MeV H + 50 kev e nm beam focusing low lateral straggling low longitudinal straggling tunable penetration depth (ion energy & species) PMMA lower emission of high energy secondary electrons (δ rays): no proximity effects 21
23 Ion beam lithography: MeV ions Beam target interaction: particularly relevant in shallow regions in : DEEP Monte Carlo code 22
24 Ion beam lithography: MeV ions Unique capabilities offered by IBL High penetration depth High aspect ratios Low lateral straggling Smoothness in lateral features Low longitudinal straggling Multi level structures Focusing, no proximity effects High resolution End of range peak Depth resolution Structural modification Functionalization of physical properties 23
25 Ion beam lithography: MeV ions Proton beams: ideal in terms of: focusing penetration profile Proton Beam Writing (PBW) P LIGA (Proton Lithographie, Galvanoformgung, Abformung: Proton Lithography, Electroplating and Molding) In several specific applications, other ions species (He, C, N, O, Si, Ar, Br, Au, ) were employed 24
26 Ion beam lithography: MeV ions ion accelerator Scanning μ beam system switching magnet vacuum pipe object aperture scan coils scan controller collimator aperture focusing lenes sample chamber feedback : CIBA National University of Singapore 25
27 Ion beam lithography: MeV ions Programmable aperture system sample collimators collimated beam broad : University of Jyväskylä 26
28 Ion beam lithography: MeV ions Ion projection system broad beam focusing system projected image collimated beam : RUBION Ruhr Universität Bochum 27
29 Ion beam lithography: MeV ions Proximity mask system collimated beam collimator broad beam : Friedrich Schiller Universität 28
30 Ion beam lithography: MeV ions Contact mask : CIBA National University of Singapore 29
31 Ion beam lithography: MeV ions Scanning beams vs masks Scanning beam systems Mask based systems : ) Fast pattern definition : ( Slow pattern definition : ( Serial & slow irradiation : ) Fast & parallel irradiation : ) High resolution : ( Mask scattering & heating : ( Limited scan field : ) Broad scan field 30
32 Ion beam lithography: MeV ions (Some of the many) MeV IBL setups around the world University of Surrey Ruđer Bošković Institute Shibara Institute of Technology University of Melbourne Louisiana Accelerator Center Legnaro National Laboratories National University of Singapore 31
33 Outline Introduction Ion matter interaction MeV ions kev ions Ion beam lithography conven onal techniques MeV ions kev ions Case studies MeV ion beam lithography resists silicon other materials single ion tracks kev ion beam lithography FIB milling FIB assisted deposition Helium ion microscope 32
34 Ion beam lithography: kev ions Focused ion beam (FIB) direct milling schematics FIB column typical FIB setup 33
35 Ion beam lithography: kev ions Focused ion beam (FIB) direct milling Dual beam systems e beam 52 i beam 52 34
36 Ion beam lithography: kev ions Range of ion sources FIB: key issues Sample charging Wien filter setup Sample coating and/or electron flooding Material redeposition Enhanced etching, limiting aspect ratio ideal case real case 35
37 Ion beam lithography: kev ions Other FIB processes Gas assisted FIB etching Gas assisted deposition 36
38 Outline Introduction Ion matter interaction MeV ions kev ions Ion beam lithography conven onal techniques MeV ions kev ions Case studies MeV ion beam lithography resists silicon other materials single ion tracks kev ion beam lithography FIB milling FIB assisted deposition Helium ion microscope 37
39 MeV Ion beam lithography: : CIBA National University of Singapore 38
40 MeV Ion beam lithography: resists Positive process: polytetrafluoroethylene (PTFE) MeV H : Department of Physics University of Surrey 39
41 MeV Ion beam lithography: resists Negative process: SU 8, DiaPlate MeV H + SU 8 DiaPlate : Ion Beam Analysis Center CAFI 40
42 MeV Ion beam lithography: resists Negative process: SU 8, DiaPlate MeV H : Ion Beam Analysis Center CAFI SU 8 41
43 MeV Ion beam lithography: resists High aspect ratio structures 2 MeV H : CIBA National University of Singapore 42
44 MeV Ion beam lithography: resists Three dimensional structures 2 MeV H MeV H : CIBA National University of Singapore 43
45 MeV Ion beam lithography: resists Three dimensional structures 2.7 MeV H + 1 MeV H : Ion Beam Analysis Center CAFI 44
46 MeV Ion beam lithography: resists Three dimensional structures 2.25 MeV H : LIPSION University of Leipzig 45
47 MeV Ion beam lithography: resists PMMA on PMMA microchannels thermal bonding : CIBA National University of Singapore 46
48 MeV Ion beam lithography: resists PMMA on PMMA microchannels thermal bonding : CIBA National University of Singapore 47
49 MeV Ion beam lithography: resists Low loss optical waveguides in polymer 2 MeV H + key fabrication issue: lateral : CIBA National University of Singapore 48
50 MeV Ion beam lithography: resists 2 MeV H + Metallic nano electodes with lift off method SiO 2 impressed PMMA PMMA : CIBA National University of Singapore 49
51 MeV Ion beam lithography: resists 2.5 MeV H + Metallic micro grids SU 8 : Lund Institute of Technology, Sandia National Laboratory 50
52 MeV Ion beam lithography: resists 2.5 MeV H + Metallic micro grids Au : Lund Institute of Technology, Sandia National Laboratory 51
53 MeV Ion beam lithography: resists High aspect ratio microfluidic channels 3 MeV H + fluence : Louisiana Accelerator Center The University of Louisiana 52
54 MeV Ion beam lithography: resists High aspect ratio microfluidic channels 3 MeV H + final : Louisiana Accelerator Center The University of Louisiana 53
55 MeV Ion beam lithography: resists Buried microfluidic channels 2.5 MeV H : Ion Beam Analysis Center CAFI 54
56 Outline Introduction Ion matter interaction MeV ions kev ions Ion beam lithography conven onal techniques MeV ions kev ions Case studies MeV ion beam lithography resists silicon other materials single ion tracks kev ion beam lithography FIB milling FIB assisted deposition Helium ion microscope 55
57 MeV Ion beam lithography: Silicon pristine Si lightly damaged Si heavily damaged Si porous Si Si sample MeV ion implantation electrochemical etching in HF wet chemical etching in KOH 56
58 MeV Ion beam lithography: Silicon pristine Si lightly damaged Si heavily damaged Si porous Si Si sample MeV ion implantation electrochemical etching in HF wet chemical etching in : Physics Department University of Torino, LIBI Ruđer Bošković Institute 57
59 MeV Ion beam lithography: Silicon Micro rod arrays non channeling : CIBA National University of Singapore channeling implantation 58
60 MeV Ion beam lithography: Silicon Three dimensional : CIBA National University of Singapore 59
61 MeV Ion beam lithography: Silicon KOH wet etching Low loss waveguides thermal annealing oxidized p : CIBA National University of Singapore 60
62 MeV Ion beam lithography: Silicon Free standing : CIBA National University of Singapore 61
63 MeV Ion beam lithography: Silicon Cantilever MEMS structures single layer (2.1 MeV Au) double layer (2.1 MeV Au, 1.5 MeV : Advanced Machinery Department AIST 62
64 MeV Ion beam lithography: Silicon Bragg reflector electrochemical etching in HF at different currents different porosity different refractive index (1.2 3) electrochemical etching in HF at alterna ng currents alternating layers of different refractive index Bragg law: n λ = 2 d : CIBA National University of Singapore 63
65 MeV Ion beam lithography: Silicon Bragg reflector electrochemical etching in HF at different currents different porosity different refractive index (1.2 3) electrochemical etching in HF at alterna ng currents alternating layers of different refractive index Bragg law: n λ = 2 d sin(θ) different fluence different refrac ve index modula : CIBA National University of Singapore 64
66 MeV Ion beam lithography: Silicon Bragg cladding bulk waveguide electrochemical etching in HF at variable current modulation of the refractive index (1.2 : CIBA National University of Singapore 65
67 MeV Ion beam lithography: Silicon Bragg cladding bulk waveguide electrochemical etching in HF at variable current modulation of the refractive index (1.2 : CIBA National University of Singapore 66
68 MeV Ion beam lithography: Silicon Bragg cladding bulk waveguide electrochemical etching in HF at variable current modulation of the refractive index (1.2 : CIBA National University of Singapore 67
69 MeV Ion beam lithography: Silicon variable thickness mask 0.2 MeV H +, 0.35 MeV H + electrochemical etching in HF Local modifica on of the refrac ve index Distributed Bragg : CIBA National University of Singapore 68
70 MeV Ion beam lithography: Silicon variable thickness mask 0.2 MeV H +, 0.35 MeV H + electrochemical etching in HF Four implantation energies, 2 D mask geometry Pixel : CIBA National University of Singapore 69
71 MeV Ion beam lithography: Silicon Refractive index modulation with a scanning microprobe The Red Armchair, Picasso : CIBA National University of Singapore 70
72 MeV Ion beam lithography: Silicon Refractive index modulation with a scanning microprobe The Dance, Matisse : CIBA National University of Singapore 71
73 MeV Ion beam lithography: Silicon Charge Collection Efficiency modulation with a scanning : LIBI Ruđer Bošković Institute P. Mondrian 72
74 Outline Introduction Ion matter interaction MeV ions kev ions Ion beam lithography conven onal techniques MeV ions kev ions Case studies MeV ion beam lithography resists silicon other materials single ion tracks kev ion beam lithography FIB milling FIB assisted deposition Helium ion microscope 73
75 MeV IBL: Other materials Gallium Arsenide Negative process based on the modulation of the material sensitivity to reactive ion : Department of Physics University of Surrey 74
76 MeV IBL: Other materials Indium Phosphide Negative process based on the modulation of the material sensitivity to electrochemical etching ( : LIPSION University of Leipzig 75
77 MeV IBL: Other materials Agar gel Positive process with 2.25 MeV H + ions Agar free regions: cell adhesion on underlying Petri : LIPSION University of Leipzig 76
78 MeV IBL: Other materials Nd:YAG Modulation of the refractive index by H + induced : CIBA National University of Singapore 77
79 MeV IBL: Other materials Photo sensitive glass (Foturan TM ) Modulation of the refractive index by 2 MeV H + induced : CIBA National University of Singapore 78
80 MeV IBL: Other materials LiNbO 3 (non linear optics applications) Modulation of the refractive index by MeV O 3+ induced : School of Physics and Microelectronics Shandong University 79
81 MeV IBL: Other materials Nd3 + doped SiO 2 FEM simulation Modulation of the refractive index by 6 MeV O 3+ induced : School of Physics and Microelectronics Shandong University 80
82 MeV IBL: Other materials Sapphire Lift off in sapphire based on He + ion implantation Positive process based on change in reactivity to wet chemical : Swiss Federal Institute of Technology 81
83 Outline Introduction Ion matter interaction MeV ions kev ions Ion beam lithography conven onal techniques MeV ions kev ions Case studies MeV ion beam lithography resists silicon other materials single ion tracks kev ion beam lithography FIB milling FIB assisted deposition Helium ion microscope 82
84 MeV IBL: Single ion tracks Tool: single Swift Heavy Ions (SHI) Instantaneous & localized release of energy in the material thermal spike coulomb explosion Spike: 10 nm, L μm high aspect ratio (up to 1:10 4 ) nano wires Ideal samples: organic polymers high electrical & thermal resistivity semiconductors, insulators crystals: transition to an amorphous phase Tracks: overlapping lumps of modified material: de/dx continuous/discontinuous : Centre de Recherche sur les Ions, le Matériaux et la Photonique (CIMAP) 83
85 MeV IBL: Single ion tracks Track etching V source I meter membrane single track solution sealing Electrolytic cell Current flowing through a 30 μm thick polycarbonate membrane with 5 tracks Solution: 2.5 M NaOH + 5% methanol Applied voltage: 0.5 V Quadratic increase after : Gesellschaft für Schwerionenforschung mbh, Darmstadt 84
86 MeV IBL: Single ion tracks Track etching V source I meter membrane single track solution sealing Electrolytic cell Equivalent pore diameter vs.time Linear increase after : Gesellschaft für Schwerionenforschung mbh, Darmstadt 85
87 MeV IBL: Single ion tracks Track etching V source I meter membrane single track solution sealing Electrolytic cell Radial etch rate vs. time 5 peaks corresponding to the 5 : Gesellschaft für Schwerionenforschung mbh, Darmstadt 86
88 MeV IBL: Single ion tracks Tip enhanced electric field High field region Increasing etching rate as the residual thickness decreases Tracks develop in : Gesellschaft für Schwerionenforschung mbh, Darmstadt 87
89 MeV IBL: Single ion tracks Porous membranes for counting and seizing cells, molecules and nanoparticles i t A 88
90 MeV IBL: Single ion tracks Porous membranes for counting and seizing cells, molecules and nanoparticles i t A 89
91 MeV IBL: Single ion tracks Porous membranes for counting and seizing cells, molecules and nanoparticles i t A 90
92 MeV IBL: Single ion tracks Porous membranes for detection of DNA strands Spike dura on length of the DNA : Kavli Institute of Technology Delft University 91
93 MeV IBL: Single ion tracks Mica nano masks for high resolution single ion : RUBION Ruhr Universität Bochum 92
94 MeV IBL: Single ion tracks Mica nano masks for high resolution single ion implantation Single 1 MeV N + ion : RUBION Ruhr Universität Bochum 93
95 MeV IBL: Single ion tracks Ordered nanopores in TiO 2 by SHI implantation through a porous anodic alumina mask Porous Anodic Alumina (PAA) anodic oxidation of Al in presence of acidic : Material Science Institute of Madrid 94
96 MeV IBL: Single ion tracks Ordered nanopores in TiO 2 by SHI implantation through a porous anodic alumina mask Porous Anodic Alumina (PAA) anodic oxidation of Al in presence of acidic electrolytes Broad implantation of 25 MeV Br 7+ ions Wet chemical etching in : Material Science Institute of Madrid 95
97 MeV IBL: Single ion tracks Ordered nanopores in TiO 2 by SHI implantation through a porous anodic alumina mask Porous Anodic Alumina (PAA) anodic oxidation of Al in presence of acidic electrolytes Broad implantation of 25 MeV Br 7+ ions Wet chemical etching in : Material Science Institute of Madrid 96
98 MeV IBL: Single ion tracks Templates for nanowires growth Single ion tracks Electrochemical etching Metal deposition 1:100 Cu nanowire Metal electro : Gesellschaft für Schwerionenforschung, Darmstadt 97
99 MeV IBL: Single ion tracks Templates for nanowires growth Single ion tracks Electrochemical etching Nanowire array Metal deposition tip enhanced electro deposition Metal electro : Gesellschaft für Schwerionenforschung, Darmstadt 98
100 MeV IBL: Single ion tracks Templates for nanowires growth Single ion tracks Electrochemical etching Metal deposition Modulated electro deposition in a mixed : Acreo Research Institute & Seagate Technology Compositionally modulated nanowire ( magnetometry, spintronics, ) 99
101 Outline Introduction Ion matter interaction MeV ions kev ions Ion beam lithography conven onal techniques MeV ions kev ions Case studies MeV ion beam lithography resists silicon other materials single ion tracks kev ion beam lithography FIB milling FIB assisted deposition Helium ion microscope 100
102 kev IBL: FIB milling TEM sample preparation Devices cross sectioning Nano tips Photonic crystals 101
103 Outline Introduction Ion matter interaction MeV ions kev ions Ion beam lithography conven onal techniques MeV ions kev ions Case studies MeV ion beam lithography resists silicon other materials single ion tracks kev ion beam lithography FIB milling FIB assisted deposition Helium ion microscope 102
104 kev IBL: FIB assisted deposition TEM sample preparation Cross section lift out Nano contacting Advertising stuff 103
105 kev IBL: FIB assisted deposition Nanoelectromechanical devices with DLC : School of Engineering University of Tokio 104
106 Outline Introduction Ion matter interaction MeV ions kev ions Ion beam lithography conven onal techniques MeV ions kev ions Case studies MeV ion beam lithography resists silicon other materials single ion tracks kev ion beam lithography FIB milling FIB assisted deposition Helium ion microscope 105
107 kev IBL: Helium Ion Microscope Smaller De Broglie wavelength Higher secondary emission yield lower current Higher : Carl Zeiss SMT 106
108 Content sources Acreo Research Institute & Seagate Technology Advanced Machinery Department AIST Centre de Recherche sur les Ions, le Matériaux et la Photonique Carl Zeiss SMT CIBA National University of Singapore Department of Physics University of Surrey Department of Nuclear Physics Lund Institute of Technology Gesellschaft für Schwerionenforschung, Darmstadt Ion Beam Analysis Center CAFI IONLAB Institut des Microtechnologies Appliquées Kavli Institute of Technology Delft University LIBI Ruđer Bošković Institute LIPSION University of Leipzig Louisiana Accelerator Center The University of Louisiana Materials Science Institute of Madrid RUBION Ruhr Universität Bochum Sandia National Laboratory School of Physics and Microelectronics Shandong University School of Engineering University of Tokio Solid State Physics Group University of Torino Swiss Federal Institute of Technology University of Jyväskylä 107
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