Modeling of charge collection efficiency degradation in semiconductor devices induced by MeV ion beam irradiation

Size: px
Start display at page:

Download "Modeling of charge collection efficiency degradation in semiconductor devices induced by MeV ion beam irradiation"

Transcription

1 Modeling of charge collection efficiency degradation in semiconductor devices induced by MeV ion beam irradiation Ettore Vittone Physics Department University of Torino - Italy 1

2 IAEA Coordinate Research Programme (CRP) F1116 ( ) Utilization of ion accelerators for studying and modeling of radiation induced defects in semiconductors and insulators Leipzig Univ. COOPERATION AND MUTUAL UNDERSTANDING LEAD TO GROWTH AND GLOBAL ENRICHMENT NUS Torino Univ. Surrey Univ. SANDIA Helsinki Univ. Delhi Univ. CAN Malesian Nuclear Agency Ruđer Bošković Inst. ANSTO JAEA-Kyoto Univ. 2

3 Object of the research Study of the radiation hardness of semiconductors Tool Focused MeV Ion beams to induce the damage and to probe the damage 3

4 Radiation damage is the general alteration of the operational properties of semiconductor devices induced by ionizing radiation Three main types of effects: - Transient ionization. This effect produces electron-hole pairs; particle detection with semiconductors is based on this effect. -Long term ionization. In insulators (oxides), the material does not return to its initial state, if the electrons and holes produced are fixed, and charged regions are induced. - Displacements. Dislocations of atoms from their normal sites in the lattice, producing less ordered structures, with long term effects on semiconductor properties. 4

5 M. Bruzzi, M. Moll, RD5, 21 Frank Hartmann, Silicon tracking detectors in high-energy physics Nuclear Instruments and Methods in Physics Research A 666 (212)

6 Modeling radiation degradation in solar cells extends satellite lifetime Robert J. Walters, Scott Messenger, Cory Cress, Maria Gonzalez and Serguei Maximenko A physics-based model of the effect of radiation on the performance of solar cells in space may enhance the on-orbit lifetime of Earth-orbiting spacecraft. SPIE 211 Space environment wide spectrum of ions (protons) and electrons. To understand the performance of a solar cell in the space radiation environment, it is necessary to know how cell degradation depends on the energy of the irradiating particle. 6

7 Characterization of radiation induced damage: Device characteristic after irradiation Y Y 1 K 1 K ed D d Device characteristics before irradiation Particle Fluence Equivalent damage factor Displacement dose First order: proportionality, independent of the particle, between the damage factor and the particle NIEL NIEL approach: measurement of K ed only for one particle (at one specific energy) K ed can be estimated for all the particles and energies 7

8 IBIC: Ion Beam Induced Charge Incoming radiation V out Deposited Energy Q Free charge generation and transport V Output Electrical Signal V out V out F(Deposited Energy, FreeCarrier Transport) Measured Well known Material Characterization 8

9 Characterization of radiation induced damage: Induced Charge after irradiation Induced Charge before irradiation CCE Q Q 1 Particle Fluence K 1 K ed Equivalent damage factor D d Displacement dose MeV Ion beams to induce the damage DIB=DAMAGING IONS And to probe the damage PIB=PROBING IONS 9

10 CCE degradation induced by ion irradiation Is a function of the damaging ion fluence 1, Hamamatsu photodiode Vbias = 1 V Y Y 1 K 1 K ed D d,95 CCE,9,85 DIB= Cl 11 MeV PIB= He 1.4 Cl MeV Fluence (m -2 ) 1

11 CCE degradation induced by ion irradiation Is a function of the ion energy and mass 1, Hamamatsu photodiode Vbias = 1 V Y Y 1 K 1 K ed D d,95 O 4 MeV He 1.4 MeV CCE,9,85 PIB= He 1.4 MeV Cl 11 MeV Li 2.15 MeV Fluence (m -2 ) 11

12 CCE degradation induced by ion irradiation Is a function of the material and/or device 1, N-type Fz-Si Y Y 1 K 1 K ed D d CCE,95,9 4H-SiC Schottky diode Hamamatsu p-i-n diode,85 P-type Fz-Si, Fluence (m -2 ) 12

13 CCE degradation induced by ion irradiation Is a function of the polarization state of the device 1, Hamamatsu photodiode Vbias = 1 V Y Y 1 K(V bias ) 1 K ed D d CCE,95,9 He 1.4 MeV V bias 1 V 5 V 2 V,85 1 V Fluence (m -2 ) 13

14 CCE degradation induced by ion irradiation Is a function of the probing ions (PIB) 1, n-type Fz silicon diode Vbias = 5 V Y Y 1 K(V bias, PIB ) 1 K ed D d,9 CCE,8,7,6,5 Probing ions 1 MeV H 2 MeV H 4.5 MeV H 8 MeV He 12 MeV He,4,3 Damage induced by 8 MeV He Fluence (m -2 ) 14

15 Summary CCE degradation DIBs(12 MeV and 8 MeV He) PIBs (1, 2, 4.5 H; 8, 12 MeV He) Different bias voltages (1,2,5 V) 15

16 IAEA Coordinate Research Programme (CRP) F1116 ( ) Utilization of ion accelerators for studying and modeling of radiation induced defects in semiconductors and insulators Leipzig Univ. COOPERATION AND MUTUAL UNDERSTANDING LEAD TO GROWTH AND GLOBAL ENRICHMENT NUS Torino Univ. Surrey Univ. SANDIA Helsinki Univ. Delhi Univ. CAN Malesian Nuclear Agency Ruđer Bošković Inst. ANSTO JAEA-Kyoto Univ. 16

17 Goals To correlate the effect of different kinds of radiation on the properties of materials and devices To extract parameters directly correlated with the radiation hardness of the material Experimental protocol Model for charge pulse formation (IBIC theory) Model for CCE degradation (SRH model) 17

18 Model for charge pulse formation (IBIC theory) Formalism based on the Shockley-Ramo-Gunn theorem Adjoint equation method: the CCE is the solution of the Adjoint Equation T.H.Prettyman, Nucl. Instr. and Meth. in Phys. Res. A 422 (1999)

19 Pulse shapes calculation Shockley-Ramo theorem I -q v 1 d Gunn theorem Gunn s theorem I -q v E V Weighting field 19

20 Boundary conditions Formalism based on the Gunn s theorem Solve the boundary n t p t continuity potential equations defined by using conditions, space charge n n n Dn n Gn n p p p Dp p Gp p the r Initial conditions For mapping charge pulses G n,p (r r ) (t) Generation point at t Evaluate the Gunn's weighting field by solving the Poisson s E E V The potentials of all the other conductors are held constant i equation Evaluate the induced charge Q (t) i t q dt' drn(r,t';r ) v n (r) p(r,t';r ) v p (r) E(r) V i V 2

21 Model for charge pulse formation (IBIC theory) Formalism based on the Shockley-Ramo-Gunn theorem Adjoint equation method: the CCE is the solution of the Adjoint Equation T.H.Prettyman, Nucl. Instr. and Meth. in Phys. Res. A 422 (1999)

22 is Adjoint equation Method the Q in t (t) q dt' dr Green's Charge function Induced n( r, t';r for the from ) v electron electrons n ( r) E( r) V continuity i V Short-cut equation The continuity equation involves linear operators The charge induced from electrons can be evaluated by solving a single, time dependent adjoint equation. n t n n D n n G * n n n n G n Q in n E V i 22

23 Model for charge pulse formation (IBIC theory) 1D Ionization profile Gunn s weighting field Fully depleted device No diffusion Q S q d dx x d x x F dy V F dy V y S y S exp exp y x x y dz dz v v p n 1 1 p n Holes Electrons Ramo Theorem Drift lengths 23

24 Model for CCE degradation Shockley-Read-Hall model Basic assumption: 1) In the linear regime, the ion induced damage affects mainly the carrier lifetime 2) The ion induced trap density is proportional to the VACANCY DENSITY 1 1 Vac(x) Fluence Capture coefficient Vacancy Density Profile 24

25 The experimental protocol Z. Pastuovic et al., IEEE Trans on Nucl. Sc. 56 (29) 2457; APL (98) 9211 (211) 25

26 Samples under study n- and p- type Fz p-i-n Si diodes Fabricated by the Institute of Physics, University of Helsinki 16 floating guard rings The frontal electrode and the guard rings are coated with Al (.5 µm]). The Al electrode has a hole in the center, 1 mm diameter. Different dimensions: 5 or 2.5 mm MeV ions 26

27 Experimental protocol C-V characteristics Depletion width-voltage Experimental protocol Electrical characterization 27

28 Experimental protocol Experimental protocol hole drift velocity profiles Gunn s weighting potential Electrical characterization Electrostatic modeling Gunn s weighting field Electron drift velocity profiles 28

29 MeV scanning ion microbeam Spot size < 3 m PROBING THE PRISTINE SAMPLE 29

30 IBIC map on a pristine diode probed with a scanning 1.4 MeV He microbeam; Experimental protocol Uniform CCE map Electrical characterization Electrostatic modeling IBIC map on pristine sample Z. Pastuovic et al., IEEE Trans on Nucl. Sc. 56 (29) 2457; APL (98) 9211 (211) 3

31 Ion microbeams Different ion mass/energy Spot size < 3 m DAMAGING SELECTED AREAS 1X1 m 2 31

32 IBIC map on a pristine diode probed with a scanning 1.4 MeV He microbeam; ZOOM in view of the selected area for focused ion beam irradiation at different fluences m 1 m Experimental protocol Electrical characterization IBIC map on pristine sample Irradiation of 9 regions at different fluences Z. Pastuovic et al., IEEE Trans on Nucl. Sc. 56 (29) 2457; APL (98) 9211 (211) 32

33 He ion microbeam Energy 1.4 MeV Spot size < 3 m PROBING DAMAGED AREAS Normalized Ionizing Energy loss (1/m) MeV He in Si Depth (m) Data from SRIM 33

34 IBIC map on a pristine diode probed with a scanning 1.4 MeV He microbeam; m 1 m Experimental protocol Electrical characterization IBIC map on pristine sample Irradiation of 9 regions at different fluences IBIC map of irradiated regions a measured 2D distribution of the IBIC signal amplitude after irradiation Z. Pastuovic et al., IEEE Trans on Nucl. Sc. 56 (29) 2457; APL (98) 9211 (211) 34

35 IBIC map on a pristine diode probed with a scanning 1.4 MeV He microbeam; m Experimental protocol f Counts V Fluence 5 m Electrical characterization IBIC map on pristine sample Irradiation of 9 regions at different fluences IBIC map of irradiated regions IBIC spectra (bias voltage = 1 V and 1 V) from the central regions of four of the areas shown in Fig. c Counts V Pulse Height (Channels) a measured 2D distribution of the IBIC signal amplitude after irradiation Z. Pastuovic et al., IEEE Trans on Nucl. Sc. 56 (29) 2457; APL (98) 9211 (211) 35

36 IBIC map on a pristine diode probed with a scanning 1.4 MeV He microbeam; m Experimental protocol CCE 1,,95,9 Hamamatsu photodiode He 1.4 MeV V bias 1 V 5 V 2 V 5 m Electrical characterization IBIC map on pristine sample Irradiation of 9 regions at different fluences IBIC map of irradiated regions, Fluence (m -2 ) 1 V a measured 2D distribution of the IBIC signal amplitude after irradiation Z. Pastuovic et al., IEEE Trans on Nucl. Sc. 56 (29) 2457; APL (98) 9211 (211) 36

37 DIB: Vacancy profiles PIB = Probing ion beam DIB = Damaging ion beam PIB: Ionization profiles Different bias voltages 37

38 CCE DIB=8 MeV He V bias = 5 V PIB 8 MeV He 12 MeV He x x x1 12 Fluence (cm -2 ) 2 MeV H Fixed DIB Fixed V bias Variable PIBs Fixed DIB Fixed PIB Variable V bias CCE DIB=8 MeV He PIB=2 MeV H V bias (V) 5 V 2 V 1 V. 2.x x x1 12 Fluence (cm -2 ) CCE PIB=2 MeV H V bias = 5 V DIB 12 MeV He 8 MeV He. 2.x x x1 12 Fluence (cm -2 ) Variable DIB Fixed PIB FIXED V bias 38

39 Vacancy/ion/m Vacancy profile Depth (m) DIB P+ N N+ 39

40 Vacancy/ion/m Vacancy profile Depth (m) PIB P+ Ionization energy loss (kevm) 1 5 Short range PIB Generation profile N N Depth (m) 4

41 1,,9,8 PIB=1 MeV H DIB=8 MeV He,7 CCE,6,5,4,3,2,1, PIB Fluence (x1 12 cm -2 ) Hole motion Electron motion P+ N N+ Ionization energy loss (kevm) 1 5 Generation profile Electric field Depth (m) 41

42 CCE 1,,9,8,7,6,5,4,3,2,1, PIB=1 MeV H DIB=8 MeV He Fluence (x1 12 cm -2 ) Residual map n Free parameter d d y F y 1 1 dx x dy exp dz n Vac(x QS q ) V x S v x n 42

43 Vacancy/ion/m Vacancy profile Depth (m) DIB P+ N N+ 43

44 Vacancy/ion/m Vacancy profile Depth (m) PIB N P+ 6 3 Ionization energy loss (kevm)9 Generation profile 1 2 Depth (m) N+ Long range PIB 44

45 1,,9,8 CCE,7,6,5,4,3,2,1, Vacancy/ion/m Vacancy profile PIB=4.5 MeV H DIB=8 MeV He Fluence Depth (x1 (m) 12 cm -2 ) Hole motion Electron motion PIB N P+ 6 3 Ionization energy loss (kevm)9 Generation profile 1 2 Depth (m) N+ 45

46 CCE 1,,9,8,7,6,5,4,3,2,1, Vacancy/ion/m Vacancy profile PIB=4.5 MeV H DIB=8 MeV He Fluence Depth (x1 (m) 12 cm -2 ) Residual map Q S q d dx x x d x dy dy F V F V y S y S exp exp x y y x dz dz 1 v p 1 v n 1 1 p n Vac(x) Vac(x) 46

47 Short range PIB Long range PIB Bias Voltage = 5 V n =17 m 3 /s p =13 m 3 /s 47

48 P-type N-type n-type Fz silicon diode Damaging ions: 8 MeV He Probing ions: 1,2,4.5 MeV H, 12 MeV He Bias Voltages: 1,2 5 V 48

49 Fz silicon diode Capture coefficient n-type n = (25±3) m 3 /s p = ( 21±16) m 3 /s p-type n = (131± 9) m 3 /s p = (22±3) m 3 /s 49

50 N-type silicon DLTS measurements singly V2( /) negatively charged divacancy σ n cm MeV He From MARLOWE simulation 1 1 Vacancy/Ion/m Vacancy Marlowe di-vacancy Marlowe Vacancy SRIM Depth (m) C. R. Crowell, Appl. Phys. 9, 79-81, 1976 Vth= m/s n =v th σ n σ n (3.6±.4) 1-15 cm 2 5

51 51 d d x y x n n S x x y p p S S Vac(x) 1 v 1 dz exp V y F dy Vac(x) 1 v 1 dz exp V y F dy x dx q Q Solution of the adjoint equations For very low level of radiation Linearization vs. Effective fluence *

52 Very low level of damage E. Vittone et al. / Nuclear Instruments and Methods in Physics Research B 372 (216)

53 Derivation of the Non Ionizing Energy Loss (NIEL) displacement damage formula Constant vacancy profile Low displacement damage CCE 1 K D ed d K ed y R d z z d eff F eff F dz k n n (z) dy dx x k p p (z) dy M V z S V S z y dx x K ed = equivalent damage factor depends on Electrostatics of the device Carrier transport and recombination Ion probe ionization profile 53

54 Limits of applicability Basic Hypotheses DIB : low level of damage 1 e,h 1,e,h n,p Vac(x) 1,e,h v Vac(x) e,h th linear model Independent traps, no clusters Unperturbed electrostatics (i.e. doping profile) of the device PIB : ion probe CCE is the sum of the individual e/h contributions No plasma effects induced by probing ions 54

55 CONCLUSIONS An experimental protocol has been proposed to study the radiation hardness of semiconductor devices Under the assumption of low damage level, the CCE degradation of a semiconductor device induced by ions of different mass and energy can be interpreted by means of a model based on The Shockley-Ramo-Gunn theorem for the charge pulse formation The Shockley-Read-Hall model for the trapping phenomena If the generation occurs in the depletion region, an analytical solution of the adjoint equation can be calculated. Adjusted NIEL scaling can be derived from the general theory in the case of constant vacancy profile. The model leads to the evaluation of the capture coefficient. The capture coefficient is directly related to the radiation hardness of the material 55

56 IAEA Coordinate Research Programme (CRP) F1116 ( ) Utilization of ion accelerators for studying and modeling of radiation induced defects in semiconductors and insulators Leipzig Univ. COOPERATION AND MUTUAL UNDERSTANDING LEAD TO GROWTH AND GLOBAL ENRICHMENT NUS Torino Univ. Surrey Univ. SANDIA Helsinki Univ. Delhi Univ. CAN Malesian Nuclear Agency Ruđer Bošković Inst. ANSTO JAEA-Kyoto Univ. 56

57 Characterization of radiation induced damage: Device characteristic after irradiation Y Y 1 K 1 K ed D d Device characteristics before irradiation Particle Fluence Equivalent damage factor Displacement dose First order: proportionality, independent of the particle, between the damage factor and the particle NIEL NIEL approach: measurement of K ed only for one particle (at one specific energy) K ed can be estimated for all the particles and energies 57

58 Characterization of radiation induced damage: Induced Charge after irradiation Induced Charge before irradiation CCE Q Q 1 Particle Fluence K 1 K ed Equivalent damage factor D d Displacement dose 58

59 n t n n D n n G * n n n Excess carrier lifetime Trap density N 1 trap v th Thermal velocity Capture cross section N trap N Trap density induced by radiation trap k Trap density in pristine material 1 1 K 59

60 Bias Voltage = 5 V n-type Fz silicon diode Bias Voltage = 2 V Damaging ions: 8 MeV He Probing ions: 1,2,4.5 MeV H, 12 MeV He Bias Voltages: 1,2 5 V Bias Voltage = 1 V CAPTURE COEFFICIENTS n = (25±3) m 3 /s p = (21±16) m 3 /s 6

A new protocol to evaluate the charge collection efficiency degradation in semiconductor devices induced by MeV ions

A new protocol to evaluate the charge collection efficiency degradation in semiconductor devices induced by MeV ions Session 12: Modification and Damage: Contribute lecture O-35 A new protocol to evaluate the charge collection efficiency degradation in semiconductor devices induced by MeV ions Ettore Vittone Physics

More information

Theory and practice of Materials Analysis for Microelectronics with a nuclear microprobe

Theory and practice of Materials Analysis for Microelectronics with a nuclear microprobe TUTORIAL Theory and practice of Materials Analysis for Microelectronics with a nuclear microprobe Ettore Vittone Physics Department University of Torino, Italy Ettore Vittone 1 IBIC for the functional

More information

Theory and applications of the Ion Beam Induced Charge (IBIC) technique

Theory and applications of the Ion Beam Induced Charge (IBIC) technique Università degli Studi di Torino Scuola di Dottorato in Scienza ed Alta Tecnologia Indirizzo di Fisica ed Astro9isica Ciclo XXV Theory and applications of the Ion Beam Induced Charge (IBIC) technique Candidate

More information

A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD.

A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD. A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD. D. Wood*, D. Hall, J.P.D Gow and A. Holland. Centre for Electronic Imaging, The Open University, Milton

More information

Characterisation of SiC by IBIC and other IBA techniques

Characterisation of SiC by IBIC and other IBA techniques Nuclear Instruments and Methods in Physics Research B 188 (2002) 130 134 www.elsevier.com/locate/nimb Characterisation of SiC by IBIC and other IBA techniques M. Jaksic a, *, Z. Bosnjak a, D. Gracin a,

More information

Joint ICTP-IAEA Workshop on Physics of Radiation Effect and its Simulation for Non-Metallic Condensed Matter.

Joint ICTP-IAEA Workshop on Physics of Radiation Effect and its Simulation for Non-Metallic Condensed Matter. 2359-3 Joint ICTP-IAEA Workshop on Physics of Radiation Effect and its Simulation for Non-Metallic Condensed Matter 13-24 August 2012 Electrically active defects in semiconductors induced by radiation

More information

physics/ Sep 1997

physics/ Sep 1997 GLAS-PPE/97-6 28 August 1997 Department of Physics & Astronomy Experimental Particle Physics Group Kelvin Building, University of Glasgow, Glasgow, G12 8QQ, Scotland. Telephone: +44 - ()141 3398855 Fax:

More information

Characterization of Irradiated Doping Profiles. Wolfgang Treberspurg, Thomas Bergauer, Marko Dragicevic, Manfred Krammer, Manfred Valentan

Characterization of Irradiated Doping Profiles. Wolfgang Treberspurg, Thomas Bergauer, Marko Dragicevic, Manfred Krammer, Manfred Valentan Characterization of Irradiated Doping Profiles, Thomas Bergauer, Marko Dragicevic, Manfred Krammer, Manfred Valentan Vienna Conference on Instrumentation (VCI) 14.02.2013 14.02.2013 2 Content: Experimental

More information

The annealing of interstitial carbon atoms in high resistivity n-type silicon after proton irradiation

The annealing of interstitial carbon atoms in high resistivity n-type silicon after proton irradiation ROSE/TN/2002-01 The annealing of interstitial carbon atoms in high resistivity n-type silicon after proton irradiation M. Kuhnke a,, E. Fretwurst b, G. Lindstroem b a Department of Electronic and Computer

More information

GaN for use in harsh radiation environments

GaN for use in harsh radiation environments 4 th RD50 - Workshop on radiation hard semiconductor devices for very high luminosity colliders GaN for use in harsh radiation environments a (W Cunningham a, J Grant a, M Rahman a, E Gaubas b, J Vaitkus

More information

EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH STUDIES OF THE RADIATION HARDNESS OF OXYGEN-ENRICHED SILICON DETECTORS

EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH STUDIES OF THE RADIATION HARDNESS OF OXYGEN-ENRICHED SILICON DETECTORS EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH CERN EP/98 62 11 Juin 1998 STUDIES OF THE RADIATION HARDNESS OF OXYGEN-ENRICHED SILICON DETECTORS A. Ruzin, G. Casse 1), M. Glaser, F. Lemeilleur CERN, Geneva,

More information

Semiconductor Detectors

Semiconductor Detectors Semiconductor Detectors Summary of Last Lecture Band structure in Solids: Conduction band Conduction band thermal conductivity: E g > 5 ev Valence band Insulator Charge carrier in conductor: e - Charge

More information

Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide

Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide Frank H. Ruddy, Member, IEEE, John G. Seidel, Robert W. Flammang, Ranbir Singh, Member, IEEE, and John Schroeder Abstract Fast-neutron

More information

STUDY OF SEMICONDUCTOR DEVICES EXPOSED TO SPATIAL RADIATION

STUDY OF SEMICONDUCTOR DEVICES EXPOSED TO SPATIAL RADIATION STUDY OF SEMICONDUCTOR DEVICES EXPOSED TO SPATIAL RADIATION G. DOMINGO YAGÜEZ 1, D. N. VILLARRAZA 1, M. A. CAPPELLETTI 1 y E. L. PELTZER y BLANCÁ 1,2 1 Grupo de Estudio de Materiales y Dispositivos Electrónicos

More information

Simulation of Radiation Effects on Semiconductors

Simulation of Radiation Effects on Semiconductors Simulation of Radiation Effects on Semiconductors Design of Low Gain Avalanche Detectors Dr. David Flores (IMB-CNM-CSIC) Barcelona, Spain david.flores@imb-cnm.csic.es Outline q General Considerations Background

More information

Hussein Ayedh. PhD Studet Department of Physics

Hussein Ayedh. PhD Studet Department of Physics Hussein Ayedh PhD Studet Department of Physics OUTLINE Introduction Semiconductors Basics DLTS Theory DLTS Requirements Example Summary Introduction Energetically "deep trapping levels in semiconductor

More information

M. De Napoli, F. Giacoppo, G. Raciti, E. Rapisarda, C. Sfienti. Laboratori Nazionali del Sud (LNS) INFN University of Catania. IPRD Oct.

M. De Napoli, F. Giacoppo, G. Raciti, E. Rapisarda, C. Sfienti. Laboratori Nazionali del Sud (LNS) INFN University of Catania. IPRD Oct. M. De Napoli, F. Giacoppo, G. Raciti, E. Rapisarda, C. Sfienti Laboratori Nazionali del Sud (LNS) INFN University of Catania IPRD08 1-4 Oct. Siena Silicon carbide (SiC) is expected to be applied to high-power

More information

Ranjeet Dalal, Ashutosh Bhardwaj, Kirti Ranjan, Kavita Lalwani and Geetika Jain

Ranjeet Dalal, Ashutosh Bhardwaj, Kirti Ranjan, Kavita Lalwani and Geetika Jain Simulation of Irradiated Si Detectors, Ashutosh Bhardwaj, Kirti Ranjan, Kavita Lalwani and Geetika Jain CDRST, Department of physics and Astrophysics, University of Delhi, India E-mail: rdalal@cern.ch

More information

SURVEY OF RECENT RADIATION DAMGE STUDIES AT HAMBURG

SURVEY OF RECENT RADIATION DAMGE STUDIES AT HAMBURG SURVEY OF RECENT RADIATION DAMGE STUDIES AT HAMBURG E. Fretwurst 1, D. Contarato 1, F. Hönniger 1, G. Kramberger 2 G. Lindström 1, I. Pintilie 1,3, A. Schramm 1, J. Stahl 1 1 Institute for Experimental

More information

Change of Majority-Carrier Concentration in p-type Silicon by 10 MeV Proton Irradiation. Abstract

Change of Majority-Carrier Concentration in p-type Silicon by 10 MeV Proton Irradiation. Abstract Change of Majority-Carrier Concentration in p-type Silicon by 10 MeV Proton Irradiation H. Iwata, S. Kagamihara, H. Matsuura, S. Kawakita 1), T. Oshima ), T. Kamiya ) Osaka Electro-Communication University,

More information

RD50 Recent Results - Development of radiation hard sensors for SLHC

RD50 Recent Results - Development of radiation hard sensors for SLHC - Development of radiation hard sensors for SLHC Anna Macchiolo Max-Planck-Institut für Physik Föhringer Ring 6, Munich, Germany E-mail: Anna.Macchiolo@mppmu.mpg.de on behalf of the RD50 Collaboration

More information

Simulation results from double-sided and standard 3D detectors

Simulation results from double-sided and standard 3D detectors Simulation results from double-sided and standard 3D detectors David Pennicard, University of Glasgow Celeste Fleta, Chris Parkes, Richard Bates University of Glasgow G. Pellegrini, M. Lozano - CNM, Barcelona

More information

Semiconductor-Detectors

Semiconductor-Detectors Semiconductor-Detectors 1 Motivation ~ 195: Discovery that pn-- junctions can be used to detect particles. Semiconductor detectors used for energy measurements ( Germanium) Since ~ 3 years: Semiconductor

More information

Test Simulation of Neutron Damage to Electronic Components using Accelerator Facilities

Test Simulation of Neutron Damage to Electronic Components using Accelerator Facilities 1 AP/DM-05 Test Simulation of Neutron Damage to Electronic Components using Accelerator Facilities D. King 1, E. Bielejec 1, C. Hembree 1, K. McDonald 1, R. Fleming 1, W. Wampler 1, G. Vizkelethy 1, T.

More information

SILICON AVALANCHE PHOTODIODES ARRAY FOR PARTICLE DETECTOR: MODELLING AND FABRICATION

SILICON AVALANCHE PHOTODIODES ARRAY FOR PARTICLE DETECTOR: MODELLING AND FABRICATION SILICON AVALANCHE PHOTODIODES ARRAY FOR PARTICLE DETECTOR: ODELLING AND FABRICATION Alexandre Khodin, Dmitry Shvarkov, Valery Zalesski Institute of Electronics, National Academy of Sciences of Belarus

More information

Semiconductor Physical Electronics

Semiconductor Physical Electronics Semiconductor Physical Electronics Sheng S. Li Department of Electrical Engineering University of Florida Gainesville, Florida Plenum Press New York and London Contents CHAPTER 1. Classification of Solids

More information

Stability of Semiconductor Memory Characteristics in a Radiation Environment

Stability of Semiconductor Memory Characteristics in a Radiation Environment SCIENTIFIC PUBLICATIONS OF THE STATE UNIVERSITY OF NOVI PAZAR SER. A: APPL. MATH. INFORM. AND MECH. vol. 7, 1 (2014), 33-39. Stability of Semiconductor Memory Characteristics in a Radiation Environment

More information

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation

More information

LET dependence of the charge collection efficiency of silicon microdosimeters

LET dependence of the charge collection efficiency of silicon microdosimeters University of Wollongong Research Online Faculty of Engineering - Papers (Archive) Faculty of Engineering and Information Sciences 2003 LET dependence of the charge collection efficiency of silicon microdosimeters

More information

Test Simulation of Neutron Damage to Electronic Components using Accelerator Facilities

Test Simulation of Neutron Damage to Electronic Components using Accelerator Facilities Test Simulation of Neutron Damage to Electronic Components using Accelerator Facilities Donald King, Patrick Griffin, Ed Bielejec, William Wampler, Chuck Hembree, Kyle McDonald, Tim Sheridan, George Vizkelethy,

More information

Radiation Damage in Silicon Detectors for High-Energy Physics Experiments

Radiation Damage in Silicon Detectors for High-Energy Physics Experiments 960 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 48, NO. 4, AUGUST 2001 Radiation Damage in Silicon Detectors for High-Energy Physics Experiments Mara Bruzzi Abstract Radiation effects in silicon detectors

More information

Guard Ring Width Impact on Impact Parameter Performances and Structure Simulations

Guard Ring Width Impact on Impact Parameter Performances and Structure Simulations LHCb-2003-034, VELO Note 13th May 2003 Guard Ring Width Impact on Impact Parameter Performances and Structure Simulations authors A Gouldwell, C Parkes, M Rahman, R Bates, M Wemyss, G Murphy The University

More information

Radiation Damage In Silicon Detectors

Radiation Damage In Silicon Detectors UNIVERZA V LJUBLJANI FAKULTETA ZA MATEMATIKO IN FIZIKO ODDELEK ZA FIZIKO Joµzef Pulko SEMINAR Radiation Damage In Silicon Detectors MENTOR: prof. dr. Vladimir Cindro Abstract: Radiation damage in silicon

More information

Charge Collection and Capacitance-Voltage analysis in irradiated n-type magnetic Czochralski silicon detectors

Charge Collection and Capacitance-Voltage analysis in irradiated n-type magnetic Czochralski silicon detectors Charge Collection and Capacitance-Voltage analysis in irradiated n-type magnetic Czochralski silicon detectors M. K. Petterson, H.F.-W. Sadrozinski, C. Betancourt SCIPP UC Santa Cruz, 1156 High Street,

More information

Displacement Damage Characterization of Electron Radiation in. Triple-Junction GaAs Solar Cells

Displacement Damage Characterization of Electron Radiation in. Triple-Junction GaAs Solar Cells Displacement Damage Characterization of Electron Radiation in Triple-Junction GaAs Solar Cells Sheng-sheng Yang, Xin Gao, Yun-fei Wang,Zhan-zu Feng 2syang@sina.com National key Lab. of Vacuum & Cryogenics

More information

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation

More information

Carriers Concentration and Current in Semiconductors

Carriers Concentration and Current in Semiconductors Carriers Concentration and Current in Semiconductors Carrier Transport Two driving forces for carrier transport: electric field and spatial variation of the carrier concentration. Both driving forces lead

More information

Electrically active defects in semiconductors induced by radiation

Electrically active defects in semiconductors induced by radiation Electrically active defects in semiconductors induced by radiation Ivana Capan Rudjer Boskovic Institute, Croatia http://www.irb.hr/users/capan Outline Radiation damage Capacitance transient techniques

More information

ABSTRACT. Keywords: CCD, Radiation Damage, High Resistivity Silicon, Charge Transfer Efficiency 1. INTRODUCTION

ABSTRACT. Keywords: CCD, Radiation Damage, High Resistivity Silicon, Charge Transfer Efficiency 1. INTRODUCTION Proton radiation damage in high-resistivity n-type silicon CCDs C. J. Bebek, D. E. Groom, S. E. Holland, A. Karcher, W. F. Kolbe, J. Lee, M. E. Levi, N. P. Palaio, B. T. Turko, M. C. Uslenghi, M. T. Wagner,

More information

Development of Radiation Hard Si Detectors

Development of Radiation Hard Si Detectors Development of Radiation Hard Si Detectors Dr. Ajay K. Srivastava On behalf of Detector Laboratory of the Institute for Experimental Physics University of Hamburg, D-22761, Germany. Ajay K. Srivastava

More information

Tracking Detector Material Issues for the slhc

Tracking Detector Material Issues for the slhc Tracking Detector Material Issues for the slhc Hartmut F.-W. Sadrozinski SCIPP, UC Santa Cruz, CA 95064 Hartmut F.-W. Sadrozinski, US ATLAS Upgrade Meeting Nov 10, 2005 1 Outline of the talk - Motivation

More information

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors. Fabrication of semiconductor sensor

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors. Fabrication of semiconductor sensor Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Fabrication of semiconductor sensor

More information

Mara Bruzzi INFN and University of Florence, Italy and SCIPP, UC Santa Cruz, USA

Mara Bruzzi INFN and University of Florence, Italy and SCIPP, UC Santa Cruz, USA SCIPP 06/16 September 2006 Capacitance-Voltage analysis at different temperatures in heavily irradiated silicon detectors Mara Bruzzi INFN and University of Florence, Italy and SCIPP, UC Santa Cruz, USA

More information

Important point defects after γ and proton irradiation investigated by TSC technique

Important point defects after γ and proton irradiation investigated by TSC technique Important point defects after γ and proton irradiation investigated by TSC technique I. Pintilie a),b), E. Fretwurst b), G. Kramberger c) G. Lindström b) and J. Stahl b) a) National Institute of Materials

More information

EE 5344 Introduction to MEMS CHAPTER 5 Radiation Sensors

EE 5344 Introduction to MEMS CHAPTER 5 Radiation Sensors EE 5344 Introduction to MEMS CHAPTER 5 Radiation Sensors 5. Radiation Microsensors Radiation µ-sensors convert incident radiant signals into standard electrical out put signals. Radiant Signals Classification

More information

DETECTORS. I. Charged Particle Detectors

DETECTORS. I. Charged Particle Detectors DETECTORS I. Charged Particle Detectors A. Scintillators B. Gas Detectors 1. Ionization Chambers 2. Proportional Counters 3. Avalanche detectors 4. Geiger-Muller counters 5. Spark detectors C. Solid State

More information

Radiation damage models: comparison between Silvaco and Synopsys

Radiation damage models: comparison between Silvaco and Synopsys Radiation damage models: comparison between Silvaco and Synopsys J. Beyer a), M. Bomben b), A. Macchiolo a), R. Nisius a) a) Max Planck Institut für Physik, München b) LPNHE & Université Paris Diderot,

More information

Introduction. Neutron Effects NSEU. Neutron Testing Basics User Requirements Conclusions

Introduction. Neutron Effects NSEU. Neutron Testing Basics User Requirements Conclusions Introduction Neutron Effects Displacement Damage NSEU Total Ionizing Dose Neutron Testing Basics User Requirements Conclusions 1 Neutron Effects: Displacement Damage Neutrons lose their energy in semiconducting

More information

Solid State Detectors

Solid State Detectors Solid State Detectors Most material is taken from lectures by Michael Moll/CERN and Daniela Bortoletto/Purdue and the book Semiconductor Radiation Detectors by Gerhard Lutz. In gaseous detectors, a charged

More information

Numerical Modelling of Si sensors for HEP experiments and XFEL

Numerical Modelling of Si sensors for HEP experiments and XFEL Numerical Modelling of Si sensors for HEP experiments and XFEL Ajay K. Srivastava 1, D. Eckstein, E. Fretwurst, R. Klanner, G. Steinbrück Institute for Experimental Physics, University of Hamburg, D-22761

More information

Chem 481 Lecture Material 3/20/09

Chem 481 Lecture Material 3/20/09 Chem 481 Lecture Material 3/20/09 Radiation Detection and Measurement Semiconductor Detectors The electrons in a sample of silicon are each bound to specific silicon atoms (occupy the valence band). If

More information

Energetic particles and their detection in situ (particle detectors) Part II. George Gloeckler

Energetic particles and their detection in situ (particle detectors) Part II. George Gloeckler Energetic particles and their detection in situ (particle detectors) Part II George Gloeckler University of Michigan, Ann Arbor, MI University of Maryland, College Park, MD Simple particle detectors Gas-filled

More information

Creation and annealing of point defects in germanium crystal lattices by subthreshold energy events

Creation and annealing of point defects in germanium crystal lattices by subthreshold energy events Creation and annealing of point defects in germanium crystal lattices by subthreshold energy events University of Sevilla 203 Sergio M. M. Coelho, Juan F. R. Archilla 2 and F. Danie Auret Physics Department,

More information

Section 12: Intro to Devices

Section 12: Intro to Devices Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals Bond Model of Electrons and Holes Si Si Si Si Si Si Si Si Si Silicon

More information

Milko Jakšić Laboratory for ion beam interactions Division for experimental physics Ruđer Bošković Institute

Milko Jakšić Laboratory for ion beam interactions Division for experimental physics Ruđer Bošković Institute Milko Jakšić Laboratory for ion beam interactions Division for experimental physics Ruđer Bošković Institute. 2. 3. Facilities IBIC Application examples Ruđer Bošković Institute 973 956 987 29 962 25 Ruđer

More information

Silicon Detectors in High Energy Physics

Silicon Detectors in High Energy Physics Thomas Bergauer (HEPHY Vienna) IPM Teheran 22 May 2011 Sunday: Schedule Semiconductor Basics (45 ) Silicon Detectors in Detector concepts: Pixels and Strips (45 ) Coffee Break Strip Detector Performance

More information

Introduction to Radiation Testing Radiation Environments

Introduction to Radiation Testing Radiation Environments http://www.maxwell.com/microelectronics/products/radtest/intro.html Introduction to Radiation Testing Quick links: Radiation Environments Total Dose Testing Single Event Effects Testing Neutron Testing

More information

X-ray induced radiation damage in segmented p + n silicon sensors

X-ray induced radiation damage in segmented p + n silicon sensors in segmented p + n silicon sensors Jiaguo Zhang, Eckhart Fretwurst, Robert Klanner, Joern Schwandt Hamburg University, Germany E-mail: jiaguo.zhang@desy.de Deutsches Elektronen-Synchrotron (DESY), Germany

More information

Internal charging simulation at a Galileo like orbit Effect of the anisotropic shielding and of the environment definition

Internal charging simulation at a Galileo like orbit Effect of the anisotropic shielding and of the environment definition 12th Geant4 Space Users Workshop Surrey University, EN, 10-12 April 2017 Internal charging simulation at a Galileo like orbit Effect of the anisotropic shielding and of the environment definition Pierre

More information

Radiation Effect Modeling

Radiation Effect Modeling Radiation Effect Modeling The design of electrical systems for military and space applications requires a consideration of the effects of transient and total dose radiation on system performance. Simulation

More information

Radiation Damage in Silicon Detectors - An introduction for non-specialists -

Radiation Damage in Silicon Detectors - An introduction for non-specialists - CERN EP-TA1-SD Seminar 14.2.2001 Radiation Damage in Silicon Detectors - An introduction for non-specialists - Michael Moll CERN EP - Geneva ROSE Collaboration (CERN RD48) ROSE - Research and Development

More information

arxiv:physics/ v2 [physics.ins-det] 18 Jul 2000

arxiv:physics/ v2 [physics.ins-det] 18 Jul 2000 Lorentz angle measurements in irradiated silicon detectors between 77 K and 3 K arxiv:physics/759v2 [physics.ins-det] 18 Jul 2 W. de Boer a, V. Bartsch a, J. Bol a, A. Dierlamm a, E. Grigoriev a, F. Hauler

More information

16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE. Energy Band Diagram of Conductor, Insulator and Semiconductor:

16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE. Energy Band Diagram of Conductor, Insulator and Semiconductor: 16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE Energy bands in Intrinsic and Extrinsic silicon: Energy Band Diagram of Conductor, Insulator and Semiconductor: 1 2 Carrier transport: Any motion

More information

High-resolution photoinduced transient spectroscopy of radiation defect centres in silicon. Paweł Kamiński

High-resolution photoinduced transient spectroscopy of radiation defect centres in silicon. Paweł Kamiński Institute of Electronic Materials Technology Joint Laboratory for Characterisation of Defect Centres in Semi-Insulating Materials High-resolution photoinduced transient spectroscopy of radiation defect

More information

Guard Ring Simulations for n-on-p Silicon Particle Detectors

Guard Ring Simulations for n-on-p Silicon Particle Detectors Physics Physics Research Publications Purdue University Year 2010 Guard Ring Simulations for n-on-p Silicon Particle Detectors O. Koybasi G. Bolla D. Bortoletto This paper is posted at Purdue e-pubs. http://docs.lib.purdue.edu/physics

More information

Study of radiation damage induced by 82 MeV protons on multipixel Geiger-mode avalanche photodiodes

Study of radiation damage induced by 82 MeV protons on multipixel Geiger-mode avalanche photodiodes Study of radiation damage induced by 82 MeV protons on multipixel Geiger-mode avalanche photodiodes Y. Musienko*, S. Reucroft, J. Swain (Northeastern University, Boston) D. Renker, K. Dieters (PSI, Villigen)

More information

Nuclear Instruments and Methods in Physics Research B 251 (2006)

Nuclear Instruments and Methods in Physics Research B 251 (2006) Nuclear Instruments and Methods in Physics Research B 251 (2006) 157 162 NIM B Beam Interactions with Materials & Atoms www.elsevier.com/locate/nimb High-energy electron induced gain degradation in bipolar

More information

Development of radiation hard sensors for very high luminosity colliders - CERN - RD50 project -

Development of radiation hard sensors for very high luminosity colliders - CERN - RD50 project - NIMA 1 NIMA RD5 Internal Note - RD5/23/1 Reviewed manuscript submitted to Vertex 22 Development of radiation hard sensors for very high luminosity colliders - CERN - RD5 project - Michael Moll * CERN,

More information

Introduction into Positron Annihilation

Introduction into Positron Annihilation Introduction into Positron Annihilation Introduction (How to get positrons? What is special about positron annihilation?) The methods of positron annihilation (positron lifetime, Doppler broadening, ACAR...)

More information

Identification of Getter Defects in high-energy self-implanted Silicon at Rp/2

Identification of Getter Defects in high-energy self-implanted Silicon at Rp/2 Identification of Getter Defects in high-energy self-implanted Silicon at Rp R. Krause-Rehberg 1, F. Börner 1, F. Redmann 1, J. Gebauer 1, R. Kögler 2, R. Kliemann 2, W. Skorupa 2, W. Egger 3, G. Kögel

More information

Radiation Effect Modeling

Radiation Effect Modeling Radiation Effect Modeling The design of electrical systems for military and space applications requires a consideration of the effects of transient and total dose radiation on system performance. Simulation

More information

Theory of Electrical Characterization of Semiconductors

Theory of Electrical Characterization of Semiconductors Theory of Electrical Characterization of Semiconductors P. Stallinga Universidade do Algarve U.C.E.H. A.D.E.E.C. OptoElectronics SELOA Summer School May 2000, Bologna (It) Overview Devices: bulk Schottky

More information

DEVELOPMENT OF A NEW POSITRON LIFETIME SPECTROSCOPY TECHNIQUE FOR DEFECT CHARACTERIZATION IN THICK MATERIALS

DEVELOPMENT OF A NEW POSITRON LIFETIME SPECTROSCOPY TECHNIQUE FOR DEFECT CHARACTERIZATION IN THICK MATERIALS Copyright JCPDS - International Centre for Diffraction Data 2004, Advances in X-ray Analysis, Volume 47. 59 DEVELOPMENT OF A NEW POSITRON LIFETIME SPECTROSCOPY TECHNIQUE FOR DEFECT CHARACTERIZATION IN

More information

Status Report: Charge Cloud Explosion

Status Report: Charge Cloud Explosion Status Report: Charge Cloud Explosion J. Becker, D. Eckstein, R. Klanner, G. Steinbrück University of Hamburg Detector laboratory 1. Introduction and Motivation. Set-up available for measurement 3. Measurements

More information

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00 1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions.

More information

PHOTOVOLTAICS Fundamentals

PHOTOVOLTAICS Fundamentals PHOTOVOLTAICS Fundamentals PV FUNDAMENTALS Semiconductor basics pn junction Solar cell operation Design of silicon solar cell SEMICONDUCTOR BASICS Allowed energy bands Valence and conduction band Fermi

More information

8.1 Drift diffusion model

8.1 Drift diffusion model 8.1 Drift diffusion model Advanced theory 1 Basic Semiconductor Equations The fundamentals of semiconductor physic are well described by tools of quantum mechanic. This point of view gives us a model of

More information

Classification of Solids

Classification of Solids Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples

More information

Traps in MOCVD n-gan Studied by Deep Level Transient Spectroscopy and Minority Carrier Transient Spectroscopy

Traps in MOCVD n-gan Studied by Deep Level Transient Spectroscopy and Minority Carrier Transient Spectroscopy Traps in MOCVD n-gan Studied by Deep Level Transient Spectroscopy and Minority Carrier Transient Spectroscopy Yutaka Tokuda Department of Electrical and Electronics Engineering, Aichi Institute of Technology,

More information

Preliminary measurements of charge collection and DLTS analysis of p + /n junction SiC detectors and simulations of Schottky diodes

Preliminary measurements of charge collection and DLTS analysis of p + /n junction SiC detectors and simulations of Schottky diodes Preliminary measurements of charge collection and DLTS analysis of p + /n junction SiC detectors and simulations of Schottky diodes F.Moscatelli, A.Scorzoni, A.Poggi, R.Nipoti DIEI and INFN Perugia and

More information

3.1 Introduction to Semiconductors. Y. Baghzouz ECE Department UNLV

3.1 Introduction to Semiconductors. Y. Baghzouz ECE Department UNLV 3.1 Introduction to Semiconductors Y. Baghzouz ECE Department UNLV Introduction In this lecture, we will cover the basic aspects of semiconductor materials, and the physical mechanisms which are at the

More information

arxiv: v1 [physics.ins-det] 25 May 2017

arxiv: v1 [physics.ins-det] 25 May 2017 physica status solidi Description of radiation damage in diamond sensors using an effective defect model Florian Kassel *,1,2, Moritz Guthoff 2, Anne Dabrowski 2, Wim de Boer 1 1 Institute for Experimental

More information

Tracking in High Energy Physics: Silicon Devices!

Tracking in High Energy Physics: Silicon Devices! Tracking in High Energy Physics: Silicon Devices! G. Leibenguth XIX Graduiertenkolleg Heidelberg 11-12. October 2007 Content Part 1: Basics on semi-conductor Part 2: Construction Part 3: Two Examples Part

More information

Outlook: Application of Positron Annihilation for defects investigations in thin films. Introduction to Positron Annihilation Methods

Outlook: Application of Positron Annihilation for defects investigations in thin films. Introduction to Positron Annihilation Methods Application of Positron Annihilation for defects investigations in thin films V. Bondarenko, R. Krause-Rehberg Martin-Luther-University Halle-Wittenberg, Halle, Germany Outlook: Introduction to Positron

More information

(a) (b) Supplementary Figure 1. (a) (b) (a) Supplementary Figure 2. (a) (b) (c) (d) (e)

(a) (b) Supplementary Figure 1. (a) (b) (a) Supplementary Figure 2. (a) (b) (c) (d) (e) (a) (b) Supplementary Figure 1. (a) An AFM image of the device after the formation of the contact electrodes and the top gate dielectric Al 2 O 3. (b) A line scan performed along the white dashed line

More information

Charge Collection and Space Charge Distribution in Epitaxial Silicon Detectors after Neutron-Irradiation

Charge Collection and Space Charge Distribution in Epitaxial Silicon Detectors after Neutron-Irradiation Charge Collection and Space Charge Distribution in Epitaxial Silicon Detectors after Neutron-Irradiation Thomas Pöhlsen, Julian Becker, Eckhart Fretwurst, Robert Klanner, Jörn Lange Hamburg University

More information

Epitaxial SiC Schottky barriers for radiation and particle detection

Epitaxial SiC Schottky barriers for radiation and particle detection Epitaxial SiC Schottky barriers for radiation and particle detection M. Bruzzi, M. Bucciolini, R. D'Alessandro, S. Lagomarsino, S. Pini, S. Sciortino INFN Firenze - Università di Firenze F. Nava INFN Bologna

More information

Hans-Herbert Fischer and Klaus Thiel

Hans-Herbert Fischer and Klaus Thiel A simulation tool for the calculation of NIEL in arbitrary materials using GEANT4 - Some new results - Hans-Herbert Fischer and Klaus Thiel Nuclear Chemistry Dept. University of Köln, FRG ESA GSP 2005

More information

Fluence dependent variations of recombination and deep level spectral characteristics in neutron and proton irradiated MCz, FZ and epi-si structures

Fluence dependent variations of recombination and deep level spectral characteristics in neutron and proton irradiated MCz, FZ and epi-si structures Outline Fluence dependent variations of recombination and deep level spectral characteristics in neutron and proton irradiated MCz, FZ and epi-si structures Motivation of combined investigations: E.Gaubas,

More information

EE 6313 Homework Assignments

EE 6313 Homework Assignments EE 6313 Homework Assignments 1. Homework I: Chapter 1: 1.2, 1.5, 1.7, 1.10, 1.12 [Lattice constant only] (Due Sept. 1, 2009). 2. Homework II: Chapter 1, 2: 1.17, 2.1 (a, c) (k = π/a at zone edge), 2.3

More information

characterization in solids

characterization in solids Electrical methods for the defect characterization in solids 1. Electrical residual resistivity in metals 2. Hall effect in semiconductors 3. Deep Level Transient Spectroscopy - DLTS Electrical conductivity

More information

Quiz #1 Practice Problem Set

Quiz #1 Practice Problem Set Name: Student Number: ELEC 3908 Physical Electronics Quiz #1 Practice Problem Set? Minutes January 22, 2016 - No aids except a non-programmable calculator - All questions must be answered - All questions

More information

Boron-Proton Nuclear-Fusion Enhancement Induced in Boron-Doped Silicon Targets by Low-Contrast Pulsed Laser

Boron-Proton Nuclear-Fusion Enhancement Induced in Boron-Doped Silicon Targets by Low-Contrast Pulsed Laser Boron-Proton Nuclear-Fusion Enhancement Induced in Boron-Doped Silicon Targets by Low-Contrast Pulsed Laser Georg Korn, Daniele Margarone, Antonino Picciotto ELI-Beamlines Project Institute of Physics

More information

Status Report: Multi-Channel TCT

Status Report: Multi-Channel TCT Status Report: Multi-Channel TCT J. Becker, D. Eckstein, R. Klanner, G. Steinbrück University of Hamburg 1. Introduction 2. Set-up and measurement techniques 3. First results from single-channel measurements

More information

ET3034TUx Utilization of band gap energy

ET3034TUx Utilization of band gap energy ET3034TUx - 3.3.1 - Utilization of band gap energy In the last two weeks we have discussed the working principle of a solar cell and the external parameters that define the performance of a solar cell.

More information

Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination

Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination The Metal-Semiconductor Junction: Review Energy band diagram of the metal and the semiconductor before (a)

More information

OPTI510R: Photonics. Khanh Kieu College of Optical Sciences, University of Arizona Meinel building R.626

OPTI510R: Photonics. Khanh Kieu College of Optical Sciences, University of Arizona Meinel building R.626 OPTI510R: Photonics Khanh Kieu College of Optical Sciences, University of Arizona kkieu@optics.arizona.edu Meinel building R.626 Announcements Homework #6 is assigned, due May 1 st Final exam May 8, 10:30-12:30pm

More information

Interaction of ion beams with matter

Interaction of ion beams with matter Interaction of ion beams with matter Introduction Nuclear and electronic energy loss Radiation damage process Displacements by nuclear stopping Defects by electronic energy loss Defect-free irradiation

More information

arxiv:physics/ v2 [physics.ins-det] 22 Nov 2005

arxiv:physics/ v2 [physics.ins-det] 22 Nov 2005 arxiv:physics/0511184v2 [physics.ins-det] 22 Nov 2005 Characterization of charge collection in CdTe and CZT using the transient current technique J. Fink, H. Krüger, P. Lodomez and N. Wermes 21. November

More information

Chemistry Instrumental Analysis Lecture 8. Chem 4631

Chemistry Instrumental Analysis Lecture 8. Chem 4631 Chemistry 4631 Instrumental Analysis Lecture 8 UV to IR Components of Optical Basic components of spectroscopic instruments: stable source of radiant energy transparent container to hold sample device

More information