Highly charged ion beams applied to fabrication of Nano-scale 3D structures. Sadao MOMOTA Kochi University of Technology
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1 Highly charged ion beams applied to fabrication of Nano-scale 3D structures Sadao MOMOTA Kochi University of Technology
2 Introduction 1 Prospect of microscopic structures 2D Semiconductor 3D Ex. MEMS
3 Introduction 2 Application of 3D structures MEMS Micro Electro Mechanical System ex. 3-Axis Accelerometer Biochip Mold 20 µm Analog Devices Co.
4 Introduction 2 Application of 3D structures MEMS Micro Electro Mechanical System ex. Micro inspection chip Biochip Mold Hitachi, Ltd.
5 Introduction 2 Application of 3D structures MEMS Micro Electro Mechanical System ex. Pattern transfer 10nm diam. & 60nm pitch SiO 2 /Si PMMA Biochip Mold 100 nm S.Y. Chou et al. J. Vac. Sci. Technol., B15(1997)2897
6 Introduction 3 To be developed Fabrication process with 1. High precision/controllability in vertical direction 2. Efficient and simple process 3. Small-size facility
7 Introduction 4 Hopeful candidate Ion beams because 1. Small angular struggling 2. High reactivity 3. Controllable range
8 Introduction 4 Hopeful candidate Highly Charged Ion (HCI) beams
9 Introduction 4 Hopeful candidate beams Highly Charged Ion (HCI) because of remarkably high reactivity extension of Rp
10 Introduction 4 Hopeful candidate beams Highly Charged Ion (HCI) because of remarkably high reactivity extension of Rp IB litho. & swelling process
11 HCI beams 1 Energy of HCI beams E Pot. of Ar ions E = Ekin. + EPot. 6 4 Kinetic energy Ekin. ~ q E Pot. (kev) Ar 9+ 1 kev Ar keV q
12 HCI beams 1 Energy of HCI beams E Pot. of Ar ions E = Ekin. + EPot. 6 4 Kinetic energy Ekin. ~ q Potential energy EPot. ~ q 2.8 E Pot. (kev) Ar 9+ 1 kev 4 Ar keV q
13 HCI beams 2 Enhanced irradiation effect - Additional energy deposition ex. Nano-diamonds created in HOPG sp 2 -> sp 3 Appl. Phys. Lett. 79 (2001) pp. 3866, T. Meguro et al.
14 HCI beams 3 Extension of R p - Higher accelerability ex. 40 Ar q+ on Si, V=100 kv kev ~100 nm Si
15 HCI beams 3 Extension of R p - Higher accelerability ex. 40 Ar q+ on Si, V=100 kv kev 1,000 kev ~100 nm Si
16 HCI beams 3 Extension of R p - Higher accelerability ex. 40 Ar q+ on Si, V=100 kv kev 1,000 kev ~100 nm Si ~1000 nm
17 IB lithography 1 IB lithography Irr. of Ar-beam Modification of material Stencil mask Etching by BHF/HF Difference in etching rate Sample
18 IB lithography 1 IB lithography Irr. of Ar-beam Modification of material Etching by BHF/HF Difference in etching rate
19 IB lithography 1 IB lithography Irr. of Ar-beam Modification of material Etching by BHF/HF Difference in etching rate
20 IB lithography 1 IB lithography Irr. of Ar-beam Modification of material Etching by BHF/HF Difference in etching rate
21 IB lithography 2 Etching process of SOG Ar 1+ : 90 kev, 6.3x10 13 ions/cm Depth (nm) I II III Eching time (sec) 200 Rev. Sci. Instrum. 79 (2008) 02C302, S. Momota et al.
22 IB lithography 2 Etching process of SOG Ar 1+ : 90 kev, 6.3x10 13 ions/cm Depth (nm) I II III Eching time (sec) 200 Rev. Sci. Instrum. 79 (2008) 02C302, S. Momota et al.
23 IB lithography 2 Etching process of SOG Ar 1+ : 90 kev, 6.3x10 13 ions/cm 2 Depth (nm) T 1 Etching rate I II III Max. Etching depth Initial depth Eching time (sec) 200 Rev. Sci. Instrum. 79 (2008) 02C302, S. Momota et al.
24 IB lithography 3 Reduction of etching time Ar 1+,9+, E = 90 kev T 1 (sec) d Depth (nm) T Eching time (sec) Fluence (ions/cm 2 ) Rev. Sci. Instrum. 79 (2008) 02C302, S. Momota et al.
25 IB lithography 4 Enhanced fabrication depth Ar 1+,9+, E = 90 kev Depth (nm) Max. Etching depth Eching time (sec) 200 Rev. Sci. Instrum. 79 (2008) 02C302, S. Momota et al.
26 IB lithography 4 Enhanced fabrication depth Ar 1+,9+, E = 90 kev Depth (nm) d HCI effect Depth (nm) Max. Etching depth Eching time (sec) Fluence (ions/cm 2 ) Rev. Sci. Instrum. 79 (2008) 02C302, S. Momota et al.
27 IB lithography 5 In case of Si Irradiation of Ar q+ Ar kev, 1.3x10 15 ions/cm 2 V = 60 kv E = 60 ~ 540 kev Cu-Mask (43 43 μm) 120 min. in 46 mass% HF Appl. Surf. Sci. 253 (2007) pp. 3284, N. Kawasegi et al.
28 IB lithography 6 Enhanced etching depth Ar 1~9+ on Si Rev. Sci. Instrum. 79 (2008) 02C302, S. Momota et al.
29 IB lithography 6 Enhanced etching depth Ar 1~9+ on Si Rev. Sci. Instrum. 79 (2008) 02C302, S. Momota et al.
30 IB lithography 6 Enhanced etching depth Ar 1~9+ on Si Defect Ion range E = 480 kev Rev. Sci. Instrum. 79 (2008) 02C302, S. Momota et al.
31 IB lithography 7 Just first step 1st step 2nd step Appl. Surf. Sci. 253 (2007) pp. 3284, N. Kawasegi et al.
32 IB lithography 7 Just first step 1st step 2nd step Appl. Surf. Sci. 253 (2007) pp. 3284, N. Kawasegi et al.
33 Swelling effect 1 Growing swelling structure - MD simulation J. Appl. Phys. 106 (2009) , S. Satake et al x ion/cm x ion/cm x ion/cm 2
34 Swelling effect 2 Growing swelling structure - Experimental results Ar 1+ (50 kev) on Si
35 Swelling effect 2 Growing swelling structure - Experimental results Ar 1+ (50 kev) on Si Expansion Sputtering
36 Swelling effect 3 Energy dependence Ar q+ on Si 50 kev to be published in J. Nanosci. and Nanotech., S. Momota et al.
37 Swelling effect 3 Energy dependence Ar q+ on Si 240 kev 50 kev to be published in J. Nanosci. and Nanotech., S. Momota et al.
38 Swelling effect 4 Control of swelling height Expansion rate x Depth of expanded layer Fluence Element Energy = q x V
39 Conclusions Possibility of HCI beams examined IB litho. Swelling process sputtering, NH and further higher precision crucial application theoretical research
40 Conclusions Possibility of HCI beams examined IB litho. Swelling process sputtering, NH HC ion source ECRIS, EBIS higher intensity/q lower cost and further higher precision crucial application theoretical research Microscopic simulation Molecular dynamics
41 Collaboration with Tokyo Univ. of Sci. Toyoma Univ. Thank you for your attention.
42 Appendices
43 HCI beam facility Prod. of HCIs Separation of q Rev.Sci.Instr. 75(2004) pp. 1497, S. Momota et al.
44 Ion beam lithography In case of SOG Irradiation of Ar q+ q = kev Cu-Mask (43 43 μm) Wet etching BHF (HF, NH 4 F) Surface profile Optical microscopy Profilometer Depth (nm) Surface profile Depth X (μm) observed by Alpha step
45 IB lithography 5 In case of Si Irradiation of Ar q+ q = +1 9 V = 60 kv E = kev Cu-Mask (43 43 μm) Etching 46mass% HF Surface profile AFM Ar kev, 1.3x10 15 ions/cm 2 T etch. = 120 min. Appl. Surf. Sci. 253 (2007) pp. 3284, N. Kawasegi et al.
46 Sputtering Sputtering rate nin nout Emitted atoms!! S =!!!!!!!! = Irradiated ions!! nin nout
47 Sputtering Measurement of S 1.Irradiation of Ar q+ q = ~ 900 kev Number of irradiated ions (A) 2.Meas. of mass before/after irradiation Number of sputtered Ag atoms (B) S = (B) (A)
48 Sputtering Sputtering rate vs. q
49 Nano hardness Nano hardness
50 Nano hardness Mod. of mechanical properties Ar-irradiated sapphire crystal 1.2 IB-induced modification of crystal structure!n a n o - h a r d n e s s! Young modulus etc. f D, max Maximum of the accumulated damage HCI beams enhances modification? Nanohardness (GPa) Virgin crystal Nanohardness Young modulus Young modulus (GPa) Irradiation fluence (x10 15 cm -2 ) Nucl. Instr. and Meth. B 240 (2005) pp. 111, J. Jagielski et al.
51 Nano hardness Softening of Si crystal Nano-indentation meas. Nanohardness [GPa] SiO2 Diff. of NH After irradiation Ar 4+, ions/cm 2 Si Depth [nm] Ref. S.A. Pahlovy, Ph.D Thesis, Kochi Univ. of Tech., 2008
52 Nano hardness Charge state dep. of modification of NH Ref. S.A. Pahlovy, Ph.D Thesis, Kochi Univ. of Tech., 2008
53 Ion source for HCIs : 1 ECRIS (ECR ion source) NANOGAN by PANTECHNIK e - with high E acceleration by ECR process Microwave confinement of ions Mirror mag. field Mag. field Gas
54 Ion source for HCIs : 2 EBIS (Electron beam ion source) dresdenebis by DREEBIT e - with high E e - -beam (~10µmφ, >10keV) produced by electron gun confinement of ions Trapped by ele. field induced by electrodes and e - -beam
55 Ion source for HCIs : 3 ILIS (Intense laser ion source) At present no industrial products, but in future... e - with high E Heated by intense laser confinement of ions No fields for confinement because of high density of e -
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