Nanotechnology Nanofabrication of Functional Materials. Marin Alexe Max Planck Institute of Microstructure Physics, Halle - Germany
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1 Nanotechnology Nanofabrication of Functional Materials Marin Alexe Max Planck Institute of Microstructure Physics, Halle - Germany
2 Contents Part I History and background to nanotechnology Nanoworld Nanoelectronics Nanomaterials Nanofabrication Part II Nanofabrication of functional materials Scaling down of ferroelectric materials Nanoferroelectrics?
3 Contents Part I Nano-size Nano -dreams Nanoelectonics History Backgrounds to nanotechnology
4 nano=10-9 m From macro toward nano via meso macroscopic? quantum 1 m 1 mm 1 µm 1 nm 1 pm nano
5 Nano - dreams NANOBOTS
6 Nano - dreams NANOBOTS
7 Nanoelectronics short history
8 History 1947: Bardeen, Brattain & Shockely invented the transistor, foundation of the IC industry. 1952: SONY introduced the first transistor-based radio. 1958: Kilby invented integrated circuits (ICs). 1965: Moore s law. 1968: Noyce and Moore founded Intel. 1970: Intel introduced 1 K DRAM.
9 History 1971: Intel announced 4-bit 4004 microprocessors (2250 transistors). 1976/81: Apple II/IBM PC. 1985: Intel began focusing on microprocessor products. 1996: Samsung introduced 1G DRAM. 1998: IBM announces1ghz experimental microprocessor. 2001: Intel P4 has > 42 million transistors.
10 Moor s Law Logic capacity doubles per IC at regular intervals (1965). Logic capacity doubles per IC every 18 months (1975).
11 Need of nanotechnology Human factors may limit design more than technology. Need of a disruptive technology
12 Nanotechnology matter The cost is dictated by the processing (ex. The main cost in microelectronics is set by lithography + related tools) Nanotechnology should be in principle an inexpensive technology information function process
13 Nanomaterials
14 Nanomaterials Nanomaterials: Better nanoscale design Defect tolerable designed functions Cheaper better processing Self-repairing self-assembly Example: human skin
15 Backgrounds to nanotechnology Transmission electron microscopy Scanning electron microscopy Scanning probe microscopy Nano manipulators Atom manipulation Self-assembly Molecular assembly
16 Backgrounds to nanotechnology Transmission electron microscopy Ruska and Knoll 1932
17 Backgrounds to nanotechnology Transmission electron microscopy imaging electron diffraction
18 Backgrounds to nanotechnology Imaging in TEM mass-contrast Diffraction Z-contrast
19 Backgrounds to nanotechnology Imaging in TEM Bright field image Latex particles on carbon support film Selective mass contrast Reverse
20 Backgrounds to nanotechnology Imaging in TEM Z-contrast image McKee et al. Phys. Rev. Lett
21 Backgrounds to nanotechnology Scanning electron microscopy D. R. S. Cumming, et al. Microelectronic Engineering 30 (1996), Hitachi
22 Nanofabrication Transformation of the investigation tools in fabrication tools
23 Nanofabrication Handbook of Nanostructured Materials and Nanotechnology, ed. N. S. Nalwa,, Academic Press, 2000
24 Nanofabrication Photo -lithography Photolithography X-ray lithography E-beam lithography Scanning Probe Methods Soft lithography Bottom-Up
25 Photolithography The art of making complicated and very precise pictures Photolithography (optical, UV, EUV) KrF λ =248nm ArF λ =193nm F2 λ =157nm Projection lithography
26 Photolithography Advantages Parallel processing High throughput Environmental technique (no vacuum) Disadvantages Resolution limit ~ 50 nm High cost tools
27 Electron beam lithography (EBL) Direct writing and Projection Exposure source: electron beam λ = h 2mV 1 + ce ev 2mc c 2 SEM EBL At acceleration voltage Vc =120kV, λ =0.0336Å Utilizes an electron column to generate focused e-beam
28 Electron beam lithography Advantages Better resolution Direct writing, no mask needed Arbitrary size, shape, order Disadvantages Serial process slow, small area D. R. S. Cumming, S. Thoms, J. M. R. Weaver and S. P. Beaumont, Microelectronic Engineering 30 (1996),
29 Electron beam lithography SCALPEL (SCattering with Angular Limitation Projection Electron-beam Lithography) Lucent
30 Scanning probe methods Plastic deformation of polymers (plowing) Tip-induced surface reactions (ex. Si oxidation) Dip-pen lithography Moving atoms and molecules by STM or AFM others
31 Scanning probe methods Tip-induced reactions Silicon line 3.5nm width fabricated across a monatomic terrace on a silicon (111) surface. The line is fabricated by selective dissociation of silane gas by the tip of the STM. Univ. of Cambridge
32 Scanning probe methods Dip-pen lithography Chad Mirkin, Northwestern University
33 Scanning probe methods Moving atoms and molecules by STM or AFM
34 Scanning probe methods Gold on mica University of Southern California Plucking off and losing atoms on Si (NASA)
35 Scanning probe methods 48 iron atoms on Cu (111) IBM Xe on Ni(110) IBM
36 Nanomanipulators
37 Soft lithography, µ contact & µ molding
38 Soft lithography nano-imprint S. Chou, Princeton Mold Imprinted PMMA
39 Bottom-up methods
40 Bottom-up Bottom-up methods start from molecules (atoms) to build up (functional) nanosize structures Advantages Cheap Dimensions ~10 nm Simple Low cost Disadvantages Low reproducibility No interconnection Successful examples Carbon nanotubes Quantum dots
41 Bottom-up
42 Bottom-up
43 Bottom-up Density of electronic states as a function of structure size.
44 Bottom-up
45 Bottom-up Perfect bottom-up example: cell division Self-assembly & self-replicating Cell replication needs thee classes of molecules: DNA RNA proteins
46 Molecular assembly 23 1mol s Molecular assembler Molecular gear, NASA Eric Drexler, Engine of Creation
47 Imagination is more important than knowledge. Albert Einstein
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Cross Section and Line Edge Roughness Metrology for EUV Lithography using Critical Dimension Small Angle X-ray X Scattering Ronald L. Jones, Wen-li Wu, Eric K. Lin NIST Polymers Division, Gaithersburg,
Photoacoustic metrology of nanoimprint polymers
Photoacoustic metrology of nanoimprint polymers T. Kehoe a, J. Bryner b, J. Vollmann b, C. Sotomayor Torres a, L. Aebi b and J. Dual b a Tyndall National Institute, Lee Maltings, University College Cork,
Fabrication and Domain Imaging of Iron Magnetic Nanowire Arrays
Abstract #: 983 Program # MI+NS+TuA9 Fabrication and Domain Imaging of Iron Magnetic Nanowire Arrays D. A. Tulchinsky, M. H. Kelley, J. J. McClelland, R. Gupta, R. J. Celotta National Institute of Standards
Large scale growth and characterization of atomic hexagonal boron. nitride layers
Supporting on-line material Large scale growth and characterization of atomic hexagonal boron nitride layers Li Song, Lijie Ci, Hao Lu, Pavel B. Sorokin, Chuanhong Jin, Jie Ni, Alexander G. Kvashnin, Dmitry