Accelerated Neutral Atom Beam (ANAB)
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1 Accelerated Neutral Atom Beam (ANAB) Development and Commercialization July
2 Technological Progression Sometimes it is necessary to develop a completely new tool or enabling technology to meet future generation processing demands. 2
3 A Brief History of Exogenesis Corporation and ANAB Development 1984: Epion Corporation founded by Allen Kirkpatrick. 1989: GCIB Collaboration with Dr. Isao Yamada (Kyoto Univ., Japan). 1996: Epion delivers 1 st GCIB tool to Kyoto University. 2000: Epion acquired by JDS Uniphase Corp. (JDSU). 2006: Epion acquired by Tokyo Electron Corp. (TEL), becomes TEL Epion. 2006: Exogenesis acquires GCIB rights for biomedical app s from JDSU. 2014: Fundamental Patents issued to Exogenesis for ANAB. 2015: Exogenesis and SEMATECH form ANAB strategic alliance. 3
4 What Are Accelerated Particle Beams Used For? Doping (sub surface junctions) Sputtering (material removal) Smoothing Coatings Patterning Chemical Modification Physical Modification (amorphous region) 4
5 Ion Implantation Plasma Bombardment GCIB kev kev kev ANAB ev 10 nm penetration path amorphized hemisphere formed by thermal transient thermal spike < 100 nm damage zone 3 nm amorphized layer Shallower process depths Energetic Particle Bombardment Processes ANAB is a Nano scale Technique nm 5
6 What Are the Differences Between a Neutralized Ion Beam and an Accelerated Neutral Atom Beam (ANAB)? A Neutralized Ion Beam is composed of individually charged ions that are charge neutralized with added electron flux for two reasons: Low energy transport (beam blowup) Target surface neutralization An Accelerated Neutral Atom Beam (ANAB) is composed of accelerated atoms that are not ionized. Low energy / high flux (no beam blowup) No target neutralization required
7 Charged Particle Beams Are Subject to Beam Blowup Particularly at Low Energies Ion Source Ions *Positive charges repel each other + + Substrate Flux neutralization is necessary to mitigate beam blow up 7
8 ANAB Is Not Subject To Beam Blowup At Low Energies ANAB Flux neutralization is not necessary Substrate 8
9 Ionized Particle Beams Require Complete Surface Neutralization to Avoid Damaging Discharges Through Insulating Materials Insulator Insulator ++ Ground Ground Ground Charged Particle Processing Charge Accumulation Capacitive Discharge Damage Ion beam processing with improper surface neutralization 9
10 ANAB Does Not Require Target Surface Neutralization Insulator Insulator Insulator Ground Ground Ground ANAB Processing No Charge Accumulation NO Damage ANAB simplifies processing 10
11 Accelerated Neutral Atom Beam Generation 11
12 Accelerated Neutral Atom Beam Generation 12
13 Accelerated Neutral Atom Beam Generation 13
14 Accelerated Neutral Atom Beam Generation 4. Absorbed collision energy overcomes weak interatomic forces The weak interatomic forces are overcome 14
15 Accelerated Neutral Atom Beam Generation 15
16 Accelerated Neutral Atom Beam Generation 16
17 Accelerated Neutral Atom Beam (ANAB) High Intensity Flux Low Energy Particles ( ev) Electrically Neutral (never ionized) Surface Penetration < 3 nm 17
18 What Are The Unique Properties of ANAB Processing? Controlled nano depth surface modification while maintaining bulk material properties. All material modifications are limited to the amorphous region. Low thermal budget. High process flux / No surface neutralization required. 18
19 ANAB Nanoscale Surface Modifications silicon surface amorphous layer 2.1 nm Accelerated Neutral Atom Beam ANAB 19
20 ANAB Controlled Surface Modifications Smooth: most materials to angstrom level smoothness. Sputter: controlled material removal / selective removal. Surface activation: hydrophilic response. Chemical modification. Implant dopants. Deposit films. Pattern / texture surfaces. 20
21 ANAB Enhanced Performance Applications Surface Structure Modification/ Amorphization ultra thin membranes non additive organic diffusion barriers Surface Texture Modification / Smoothing / Patterning UV / EUV Optics Bio integration / enhanced cell attachment Surface Energy Modification / Hydrophilicity Bio activation of non bioactive materials Nano fluidics Surface Chemistry Modification Ultra shallow doping Composite interfaces / coatings 21
22 Hydrophilic Response ANAB Increases surface hydrophilicity Teflon Ti 22
23 Enhanced Bioactivity 23
24 ANAB Processing of Inert Materials for Enhanced Healing and Osseointegration Inter body Device for Spinal Fusion PEEK Control PEEK ANAB Processed Cells now Attach and Proliferate 24
25 Elution Barrier Formation Creation of a non additive Diffusion Barrier for controlled drug release rates via ANAB processing 25
26 ANAB Enhanced Drug Elution B Control E ANAB 0 h C F 24 h D G Polymer free drug delivery. 48 h An elution barrier that can be tailored to deliver drug/protein over prescribed time. 26
27 ANAB Enhanced Adhesion 27
28 ANAB Smoothing EUV Lithography Mask Blank Substrate After Accelerated Neutral Atom Beam Exogenesis process Ra nm Rz nm Ra nm Rz nm 28
29 ANAB Enhanced Membranes After ANAB Before ANAB Pellicle material processing for enhanced transparency 29
30 Ultra Shallow Surface Doping Incorporate Various Gasses O 2, N 2, CH 4 NF 3 B 2 H 6, PH 3, AsH 3 GeH 4, SiH 4 {1-3nm } 30
31 ANAB Enhanced Oxidation Resistance ANAB ANAB Control Control Oxidation accelerated at ~200deg C in air 31
32 Exogenesis Has Formed The Following Development/Commercialization Alliances Biomedical Next generation drug eluting stent based on ANAB technology. Enhanced integration spinal cages and enhanced wound healing products. MEMs Advanced DNA imaging (TEM) grids. Functionalized surfaces for enhanced imaging. Semiconductor SEMATECH Strategic Alliance. Pellicle Materials (Ultra thin membranes). High Energy UV & EUV Optics Increased laser damage thresholds. Surface hardening. Surface passivation. 32
33 ANAB Is An Enabling Nano scale Surface Modification Technology Exogenesis is interested in forming relationships for commercializing ANAB technology. Please visit us at Innovations New York booth for more information. 33
34 Thank You We Appreciate Your Interest 34
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