Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology
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1 MUBW 5- T Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology NTC D D3 D5 7 D7 5 T T3 T5 D D3 D D D D T7 T T T D D D 3 3 Three Phase Rectifier Brake Chopper Three Phase Inverter RRM = CES = CES = I FM = 5 5 = 55 5 = I FSM = 5 CE(sat) =.7 CE(sat) =.7 Input Rectifier Bridge D - D Symbol Conditio Maximum Ratings RRM I F I DM I FSM T C = C; sine T C = C; rectangular; d = / 3 ; bridge T C ; t = ms; sine 5 Hz 5 5 P tot T C 5 W Symbol Conditio Characteristic alues F I F = 5 ; (, unless otherwise specified).5.5 I R R = RRM ;..3.5 m m R thjc (per diode). K/W pplication: C motor drives with Input from single or three phase grid Three phase synchronous or asynchronous motor electric braking operation Features High level of integration - only one power semiconductor module required for the whole drive IGBT technology with low saturation voltage, low switching losses and tail current, high RBSO and short circuit ruggedness Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery Industry standard package with iulated copper base plate and soldering pi for PCB mounting Temperature see included IXYS reserves the right to change limits, test conditio and dimeio. IXYS ll rights reserved - 7
2 MUBW 5- T Output Inverter T - T Symbol Conditio Maximum Ratings CES to 5 C S Continuous ± 5 M T C T C = C T C = C; t p = ms 5 P tot T C 7 W Symbol Conditio Characteristic alues CE(sat) = 5 ; = 5 (, unless otherwise specified).7..5 (th) = m; = CE ES CE = CES ; =.7.7 m m I GES CE = ; = ± n C ies CE = 5 ; = ; f = MHz 3.5 nf Q Gon CE = ; = 5 ; = 5 7 nc t d(on) t r t d(off) t f E on RBSO t SC (SCSO) Inductive load, CE = ; = 5 = ±5 ; = Ω = M ; = 5 = Ω; CE = 7 ; = ±5 ; = Ω t P < µs; non-repetitive; CEK < CES - L S di/dt R thjc. K/W Output Inverter D - D Symbol Conditio Maximum Ratings I F5 I F T C T C = C 5 Symbol Conditio Characteristic alues F I F = 5 ; I RM Q rr t rr E rec I F = ; di F /dt = - /µs; ; R = ; =.. 9. µc R thjc (per diode).5 K/W IXYS reserves the right to change limits, test conditio and dimeio. IXYS ll rights reserved - 7
3 MUBW 5- T Brake Chopper T7 Symbol Conditio Maximum Ratings CES to 5 C S Continuous ± 5 M T C T C = C T C = C; t p = ms P tot T C W Symbol Conditio Characteristic alues CE(sat) = 35 ; = (, unless otherwise specified).7..5 (th) =.5 m; = CE ES CE = CES ; =.3.5 m m I GES CE = ; = ± n C ies CE = 5 ; = ; f = MHz.5 nf Q Gon CE = ; = 5 ; = nc t d(on) t r t d(off) t f RBSO t SC (SCSO) Inductive load, CE = ; = 35 = ±5 ; = 7 Ω = M ; = 5 = 7 Ω; CE = 7 ; = ±5 ; = 7 Ω t P < µs; non-repetitive; CEK < CES - L S di/dt R thjc. K/W Brake Chopper D7 Symbol Conditio Maximum Ratings RRM to 5 C I F5 I F T C T C = C Symbol Conditio Characteristic alues F I F = 35 ; 3.5. I R R = RRM ; m m R thjc (per diode). K/W IXYS reserves the right to change limits, test conditio and dimeio. IXYS ll rights reserved 3-7
4 MUBW 5- T Temperature Seor NTC Symbol Conditio Characteristic alues R 5 T B 5/ kω K Module Symbol Conditio Maximum Ratings T JM T stg operating ISO I ISOL < m; 5/ Hz 5 ~ M d Mounting torque (M5) 3 - Nm Symbol Conditio Characteristic alues R therm-chip Resistance terminal to chip 5 mω d S d Creepage distance on surface Strike distance in air C C C mm mm R thch with heatsink compound. K/W Weight 3 g Dimeio in mm ( mm =.39") IXYS reserves the right to change limits, test conditio and dimeio. IXYS ll rights reserved - 7
5 MUBW 5- T Input Rectifier Bridge D - D 5 = 5 C I t s I FSM 3 = 5 C I F [] = 5 C 3 = 5 C F [] Fig. Typ. forward current vs. voltage drop per diode 5Hz, % RRM... s t t ms P tot 5 W I d()m C T amb R th :.5 K/W.5 K/W.3 K/W.5 K/W K/W K/W 5 K/W I d() T C C Z thjc. [K/W].... t [s] Fig. Traient thermal impedance junction to case IXYS reserves the right to change limits, test conditio and dimeio. IXYS ll rights reserved 5-7
6 MUBW 5- T Output Inverter T - T / D - D = 5 = [] [] 9 3 CE [] Fig. 3 Typical output characteristic 3 5 CE [] Fig. Typical output characteristic CE = I F [] [] [] F [] Fig. 5 Typical trafer characteristic Fig. Typical forward characteristic of free wheeling diode CE = = ±5 = Ω E on CE = = ±5 = 5 diode IGBT E E rec E E on Z thjc. [K/W] E rec single pulse [] Fig. 7 Typ. switching losses vs. collector current [Ω] Fig. Typ. switching losses vs. gate resistance.... t [s] Fig. 9 Traient thermal impedance IXYS reserves the right to change limits, test conditio and dimeio. IXYS ll rights reserved - 7
7 MUBW 5- T Brake Chopper T7 / D7 7 5 I F [] 3 [] = [] F [] Fig. Typical output characteristics Fig. Typical forward characteristics of free wheeling diode CE = = ±5 = 7 Ω 5 3 CE = = ±5 = [] [Ω] Fig. Typ. turn off energy vs. collector current Fig. 3 Typ. turn off energy versus gate Temperature Seor NTC Z thjc [K/W] diode IGBT R. [Ω] single pulse.... t [s] Fig. Traient thermal impedance T [ C] Fig. 5 Typ. termistor resistance versus temperature MUBW 5T IXYS reserves the right to change limits, test conditio and dimeio. IXYS ll rights reserved 7-7
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