Performance, Packaging, Price: Challenges for Sensor Research I. Eisele Fraunhofer EMFT
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1 Performance, Packaging, Price: Challenges for Sensor Research I. Eisele Fraunhofer EMFT
2 Introduction There are many sensor effects... but only a a very few sensors!
3 Outline CMOS Encapsulated CMOS/MEMS Encapsulated CMOS/MEMS Open to Environment Heterogeneous Integration Open to Environment Physical Parameters Magnetic field, T, etc. Acceleration, positioning, force, etc. Pressure, flow, sound, etc. Chemical Parameters Humidity, concentrations in gases and liquids Biological Parameters Bacteria, DNA, cell analysis
4 Encapsulated CMOS Technology: Hall sensor Source Drain Hall probes High performance in the 70`s Gate
5 Cavity Etching: Pressure Sensor on Product Wafer Price: CMOS/MEMS Technology Open (Pressure sensor) Scaling of area Cavity etching for pressure sensors; Replacement of TMAH etching; Reduction of chip area ~30% Resist on Si (BS) Si removed Si sidewall oxide Backside after cavity etching Frontside after cavity etching
6 Acceleration Sensor Encapsulated CMOS/MEMS Technology: Force sensor Fabrication Prototype: Fraunhofer EMFT Principle: Capacitive Sensor, CMOS compatible TEOS Oxid Al C O r A 1 pf d Scaling difficult Schwingblock (Top Si freigeätzt)
7 Scaling: NanoGap FET with Epitaxial Gate Structure NEMS Devices: NanoFET Epitaxial layer sequence Si/SiGe/Si Selective etching of SiGe Single crystalline cantilever I DS O r W d L V V 2 GS T Gap 60 nm Independent of area Scalable: Price reduction
8 Resonance Behaviour of a NanoGap Cantilever Simulation of mechanical resonance frequency Measurement of mechanical vibrations with a laser vibrometer Cantilever: 10 x 1.5 x 0.4 [µm]
![Technological realization of NanoFET Bridge dimensions: Length L = 10 [µm] Width W = 0.](/docs-images/79/79453078/images/9-2.jpg "8 [µm] Gap: 60 [nm] Force 1 and Force 2 for dynamical gate motion NanoFET-bridge transistor Division 14.03.")
9 Technological realization of NanoFET Bridge dimensions: Length L = 10 [µm] Width W = 0.8 [µm] Gap: 60 [nm] Force 1 and Force 2 for dynamical gate motion NanoFET-bridge transistor Division Nanomaterials, Devices and Si Processing NDS Martin Heigl
10 Chemical Parameters: Sensor effects Silizium Photomultiplier Interdigital transducer (IDT) Quartz microbalance impedance Interdigital transducer temperature Pellistor optical absorbance fluorescence light scattering Transducer effect mass quartz microbalance surface acoustic wave device electrochemical ISFET Gas FET amperometric electrodes IDT and GasFET are suited for CMOS/MEMS integration GasFET Electrochemical electrodes
11 Interdigital Transducer (IDT) for Gas Measurements Indicator Electrode 1 Electrode 2 Schematics Substrate Technological realization: 3x6 mm, C ~ 10pF Heater and temperatur sensor integrated C IDK C DL Z CC Indicat or Impedance Z WB Interdigital Transducer with ZIF (Zero Insertion Force) connector
12 Capacitive Measurement of CO 2 with Heteropolysiloxane
13 Problem: Cross Sensitivity to Humidity
14 Chemical Parameters: from MOSFET to GasFET M S M ± chem Thresholdv oltage : V T ~ MS chemisch M ± chem Permeable gate (Lundström H 2 -FET) Suspended gate Janata/Eisele
15 Floating Gate Gas FET (FGFET) Hybrid mounted top electrode with sensitive film Air gap Passivation (SiO 2 / Si 3 N 4 ) Guard ring Encapsulated floating gate Glue p-si substrate Capacitance n-well R S Capacitive voltage divider V Top + DF C Gap p-channel MOSFET in a transistor n-well V Guard C Pass V Gate + DV Gate C Ox V S C i V D FGFET: I DS W L V Cap C1V Ci C Top 1 C C Ox Ox V Cap V V Tr T V DS Advantage: Amplification of MOSFET
16 Floating Gate Gas FET
17 (ev) H 2 (%) Example: Hydrogen Detection with Platinum 1,0 0,5 0,0-0,5 25 C DF = DF (H 2 ) Stable signals at 25 C Logarithmic concentration dependence Saturation at 2,5 % - 3 % -1,0 ~log H Zeit (h) Source: C. Senft, Ph.D. thesis, UniBwM (2009)
18 Biological Parameters: Interdigital Transducer (IDT) Electric Cell Impedance Spectroscopy A ~ cm 2, V = 35 µl
19 Biological Parameters Impedance-Based Cell Monitoring: Information Content Z(f) Frequency Domain Source: J. Wegener, Univ. Regensburg Time Domain
20 Biological Parameters: Interdigital Transducer (IDT) Electric Cell Impedance Spectroscopy Poor Man s Approach Problem: Open contact and Packaging
21 Heterogeneous Integration Basic Technology challenges - 3D Integration - Assembly Formation of Through Silicon Vias (TSV) for fully processed wafers Interconnect at low temperatures for batch processing (for instance organics)
22 TSV Heterogeneous Technology Integration: TSVs Sensor 50 µm Electronics Daisy chains in PCM
23 W- Fill of High Aspect Ratio Trench TSV-Dimensions: 3 µm x 10 µm x 50 µm 300 nm SACVD TEOS 20 nm TiN CVD 900 nm W CVD und W Backetch 800 nm M1 (AlSiCu, structured) 850 nm PN/POX (Passiviation) All process temperatures below 450 C!
24 Metallization: Solid Liquid Inter-Diffusion (SLID) Thermal management of dissipated power -> no polymeric underfiller adhesion layer High & low melting metal metal Interdiffusion liquid metal layer intermetallic compound patterned electroplating contact under pressure and heat; T melt low formation of intermetallic compound; T melt comp > T melt low Goal: low temperature bond (below reflow temperature of 260 C) for organic compounds
25 Metallization SLID (Solid Liquid Interdiffusion) Passivation ILD 5-7 µm Isolation Tungsten Plug Si 50 µm Copper Alloy Sn Electrical SLID interconnection in combination with W-TSV
26 New Low-T Bonding Process for Highly Reliable Systems Bonding at sub-melting temperatures with simultaneous ultra-sonic agitation (Panasonic Bonder FCB 3) Cu/Sn IMC Bonding at 100 C and 150 C investigated. Source: Fraunhofer EMFT
27 Melting point of metals, alloys and compounds Metal Meltingpoint [ C] Ni Au Cu Ag Bi Sn Working -point [ C] In Ga Intermetallic Compounds Meltingpoint [ C] Ni3Sn2 (imc) 1264 [7] Ni3Sn (imc) 1174 [7] AgIn2, Ag2In (imc) [6] Cu3Sn (imc) 676 [7] AuIn2 (imc); Cu3Ga2 454 ; 468 Eutectic Alloy Meltingpoint [ C] Cu6Sn5 (imc) 415 [7] A u / Sn (80/20) 278 Ag / Sn 225 Ag / In (80/20) 206 Ag / In/Sn (3/20/77) 190 Bi / Sn (58/42) 139 Bi/In/Sn (32/51/16) 62 Bi/In (34/66) 72 Bi/Sn (63/37) 94 Galinstan (Ga/In/Sn, 59.6/26/14.4) -19 to 11
28 3D Integration: Particle Detector Read-out Circuit with TSV-SLID Technology SLID-Pads within Pixel-array Fraunhofer EMFT / Bernd Mueller Frontend chip connected to sensor wafer via Cu/Sn solid-liquid-interdiffusion (SLID) process (2880 SLID-Pads); in cooperation with Max-Planck-Institute of physics
29 Conclusions Based on outline: CMOS/MEMS sensors for physical parameters are available, new concepts only if better performance or lower price CMOS/MEMS sensors for chemical parameters are partially available, new device and packaging concepts are needed CMOS/MEMS sensors for biological applications are still in an early stage
30 Thank you for your attention
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