Superconducting Ti/TiN thin films for mm wave absorption
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1 Superconducting /N thin films for mm wave absorption A.Aliane 1, M. Solana 2, V. Goudon 1, C. Vialle 1, S. Pocas 1, E. Baghe 1, L. Carle 1, W. Rabaud 1, L. Saminadayar 2, L. Dussopt 1, P.Agnese 1, N. Lio Soon Shun 1, S. Becker 1, A. Hamelin 1, P. Rodière 2, A. Poglitsch 3,V. Reveret 3, L. Rodriguez 3, S. Bounissou 3, O. Adami 3 1 CEA/LETI, MINATEC, 17, avenue des martyrs Grenoble cedex 9, France 2 Institut Néel, CNRS and Université Joseph Fourier BP166, F Grenoble, France 3 AIM Paris Saclay, UMR CEA/CNRS/UP7, CEA/Irfu/DAp, Bât 709, Orme des Merisiers, France LTD17 July 2017, Kurume, Japan
2 OUTLINE Introduction Background, bolometer principle Fabrication process Superconducting absorbers Tc and sheet resistance optimization Thermal cycling / annealing Physical characterization Conclusion 2
3 BACKGROUND The all-silicon bolometer array developed for PACS in Herschel satellite Sub-mm detection ( µm) Cooled at 300 mk Pixel 16x16 array Focal plane array PACS instrument First image (2009) New developments: Scalability in sub-mm and mm wave bands Dual polarization detection Very high sensitivity: 3 aw/ Hz at 100mK Targets requirements of future space astronomy missions (e.g. SPICA mission) Poster of S. Bounissou et al.(a-75) Poster of L. Rodriguez et al (A-62) 3
4 BOLOMETER PRINCIPLE Thermometer Absorber Thermal link: Meander design to enhance the thermal insulation of the pixel (thermal time constant, NEP) Thermometer: ion implanted Silicon (P,B) between 50 and 100mK good sensitivity: S. low specific heat capacity: Poster of O. Adami et al. A-74 C = γt + Θ A 3 T 3 D de dt = C dt dt = P ray + R(T).I 2 T T b G th ( T ) dt Absorber: superconducting bi-layer metals for low specific heat and good absorption Focus of this presentation 4
5 FABRICATION PROCESS (1) Collective manufacturing realized in standard 200mm silicon technology at CEA-LETI clean rooms Above-IC technology implemented on a readout circuit Electrical arrays of 16x16 pixels are being processed 200-mm wafer 41 dies Array (16x16 pixels) and test devices Pixel (1.2mm pitch) Connections ~ Different process steps (deposition, photolithography, etching, electroplating, CMP ) Reference Absorbers + Thermometer 5
6 FABRICATION PROCESS (2) Cavity and thermometers on separate wafers Oxide-oxide molecular bonding Copper via filling by electroplating Sacrificial layer etching: Requires residual stress relaxation in thermometer and absorber layers Cu plug T of molecular bonding <450 C Released pixel structure 6
7 FABRICATION PROCESS (3) SEM image of the Pixel structure 7
8 SUPERCONDUCTING ABSORBER (1) Tc A Superconductors: very low heat capacity C = 8,5 γ Tc exp 1,44 + T 3 T Θ below the transition Tc Absorption at mm-waves if h>2δ < ( T) 2 kb 0.3 T T := Tc 1 q Tc Need to tune T c through proximity effects in bi-layer metals; /N selected for microelectronics compatibility Band-gap (ev) Tc=1K Tc=0.75K Tc=0.3K Cut-off wavelength (m) T(K) Tc(K) 8
9 SUPERCONDUCTING ABSORBER (2) Pixel design optimized through multiple parameters: pitch, cavity height, absorber resistance, For the 2 mm wavelength: Sheet resistance ~ Ω/sq. (dipoles of 100 squares) Working Temperature ~100 mk T c ~ 0.75 K Absorption 1,0 0,8 0,6 0,4 Rsq Rsq=0,8 Ohm/sq Rsq=1,5 Ohm/sq Rsq=2,5 Ohm/sq Rsq=3 Ohm/sq Pitch:1200µm Silicon AR: 115µm Optical cavity: SiO 2 : 22µm Vacuum: 4µm 0,2 0, λ(µm) 9
10 THERMAL ANNEALING / CYCLING (1) Thermal cycling: relaxation of residual stresses in the bi-layer /N layers deposited at 100 C on 500nm SiO 2 Sample 1: /N = 100/5 nm Sample 2: /N = 300/5 nm N oxide Silicon:725µm Bow(µm) Annealing temperature: C (1) Stoney formula (1) N:80nm (2) (2) 2 cycles bow(µm) T( C ) :100nm/N:5nm Bow(µm) 2 1 cycle T( C) :300nm/N:5nm 5 1 cycle T( C ) Bow measurements on 200-mm wafers 10
11 THERMAL ANNEALING / CYCLING (2) XRD analysis Presence of a stress in the deposited thin films Confirms the bow measurements d hkl λ = 2 sinθ :100/N:5nm :100/N:5nm (Thermal cycling) Si N oxide Silicon:725µm :100/N:5nm :100/N:5nm (Thermal cycling 1000 λ=1.5406å 100 count/s N N Si Si Si Si N Si count/s 10 39,5 40,0 40,5 41,0 θ-2θ ( ) θ-2θ ( ) A shift of the diffraction peak Effect of the residual stress 11
12 THERMAL ANNEALING / CYCLING (3) Impact on the critical temperature For /N : 100nm/5nm : Tc shifts from 0.75K to 0.63K Modify the proximity effect between N and Presence of oxidized states at the interfaces preventing the cooper pairs diffusion from N to? N oxide Silicon:725µm N:5nm :100nm B=0 T Thermal cycling N:5nm :300nm B=0 T Thermal cycling 12
13 THERMAL ANNEALING / CYCLING (4) Impact on the critical magnetic field For :100nm/N:5nm B c decreases from 93mT to 40mT at 100mK Critical magnetic field is related to the critical temperature Defects (oxidized states) in the /N layer causing the degradation of the critical magnetic field N oxide Silicon:725µm N:5nm :100nm N:5nm :300nm Thermal cycling Thermal cycling 13
14 PHYSICAL CHARACTERIZATION (1) Surface analysis with XPS O 1s increases with the thermal cycling: residual surface oxidation The binding energy of the O1s peak reflects a typical chemical state: sub-oxide or oxide-nitride N oxide Silicon:725µm :100/N:5 nm (thermal cycling) :100/N:5 nm :300/N:5 nm (thermal cycling) :300/N:5 nm - 2p3-2p O 1s :100/N:5 nm(thermal cycling) :100/N:5 nm :300/N:5 nm(thermal cycling) :300/N:5 nm C/S N 1s -O 1s - 2s C/S N 2s - 3p - 3s Binding Energy (ev) Binding Energy (ev) 14
15 PHYSICAL CHARACTERIZATION (2) N oxide SIMS analysis Presence of oxidized states at the surface of the N Confirms the XPS analysis Silicon:725µm An effect on electrical properties 15
16 CONCLUSION Collective fabrication on 200mm wafer with an above IC integration. We have designed an innovative pixel using doped silicon thermometers between 50 and 100mK to absorb in sub-mm and mm waves. We have studied and integrated a compatible superconducting absorber. We used the proximity effect between (Tc=0.4K) and N (Tc=2.2K) to adapt the Tc for mm wave applications. For the final pixel structure, we have to take into account stress and oxidized effects in superconducting absorbers to keep good electrical and optical properties. We have to control these effects by adapting annealing steps and passivation layers. 16
17 Thank you for your attention Leti, technology research institute Commissariat à l énergie atomique et aux énergies alternatives Minatec Campus 17 rue des Martyrs Grenoble Cedex France
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