LECTURE 5 SUMMARY OF KEY IDEAS
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1 LECTURE 5 SUMMARY OF KEY IDEAS Etching is a processing step following lithography: it transfers a circuit image from the photoresist to materials form which devices are made or to hard masking or sacrificial material, such as SiO 2. General etch requirements: 1. Obtain desired profile (sloped or vertical) 2. Minimal undercutting or bias 3. Selectivity to other exposed films and resist 4. Uniform and reproducible 5. Minimal damage to surface and circuit 6. Clean, economical, and safe There are two main types of etching used in IC fabrication: wet chemical etching and dry or plasma etching. Wet etching has usually excellent selectivity since chemical reactions are very selective but it is also isotropic. Selectivity comes from chemistry; directionality usually comes from physical processes, such as ion impacts in plasma etching systems. Wet etching is done in liquid solution of aggressive chemicals that react with solids, such as silicon, oxides, nitrides, and metals. The reaction products are usually in liquid form and are removed with the solution. Dry etching is done in ionized gas at low pressure.
2 GAS PHASE AND VACUUM Many processing steps in micro-fabrication and semiconductor technology are conducted in gases at atmospheric pressure or at lower pressures. Materials in gas phase are also used to form thin film, etch, and dope semiconductors. Gasses at considerably lower than atmospheric pressures are refereed to as vacuum. Ideal vacuum is not achievable: different levels of vacuum only correspond to different pressure ranges and thus the molecular, or atomic, densities. The ideal gas law is a good model for understanding properties of gasses at low pressure and normal and elevated temperatures. PV n o RT n o kn A T where P is gas pressure, V volume, n o is number of moles, k Boltzmann s constant, N A Avogadro s number, and T absolute temperature. The molecular density n is given by the ratio of the number of molecules and volume. no N n V A P kt Thus n is proportional to pressure and inversely proportional to absolute temperature. The gas molecules are in random motion and the absolute temperature is the measure of their kinetic energy. Distribution of molecular velocity is given by Maxwell-Boltzmann equation:
3 298.15K (25 C) Thermal random motion of gas molecules results in their mutual collisions and scattering. They travel only certain distance before they collide and scatter changing direction of their motion. The distances between collisions vary randomly and the mean distance or mean free path depends on both molecular density and the molecular size (cross section). In terms of gas parameters: kt 2 2Pd For air at room temperature a handy equation gives = 5 x 10-3 /P, where is in centimeters and P is in Torrs. Thus in high vacuum of 10-6 Torr = 50 meters. Since the distance between molecular collisions in the high vacuum region is longer than the dimensions of the vacuum chamber, the molecules move in straight lines being deflected only by the chamber walls. Every surface in the chamber, as well as the walls is subjected to impacts of the molecules. These impacts are creating the gas pressure. The flux of the molecules on any surface (the number of impacts per unit area per unit time)
4 is equal to the product of the velocity component normal to the surface and the mean molecular density: _ v normal n P 2 mkt where m is the mass of the molecules in mass units (not the molecular mass). When P is given in Torrs and in cm -2 s -1 then P MT where M is molecular or atomic mass. In film deposition process the flux of the molecules of atoms of interest is often called arrival rate. If all arriving molecules or atoms stick to the surface and form a film, one can consider the time that it takes to form one molecular layer on the surface (monolayer): = /N s, where N s is molecular or atomic surface density of the film. The values of these basic quantities for air at room temperature age given in the table below.
5 BASICS OF VACUUM Examples of basic molecular parameters in different vacuum ranges (for air at room temperature) CONDITIONS TYPICAL PRESSURE P [Torr]* Molecular Density cm -3 MEAN FREE PATH TIME TO FORM A MONOLAYER m Atmospheric Pressure x nm 3 ns Low Vacuum x m 2.4 s Medium Vacuum x mm 2.4 ms High Vacuum x m 2.4 s Ultra High Vacuum x km 6.4 h * 1Torr = Pa 1Pa = 1N/m 2
6 Plasma P = ~1Torr ~500V Power supply 1 mtorr < P < 10 Torr Plasma density n e /n Neutrality n i = n e E 0 (except near boundary)
7 Plasma etching combines both chemical and physical effects. One or the other can dominate depending on the apparatus geometry, voltage, frequency, magnetic field as well as gas pressure and its chemical composition. Physical effects are due to ion impacts. Inert gasses such as argon cause only physical effects (sputtering). Using reactive gasses results in chemical effects (reactions) but also in physical effects, such as in Reactive Ion Etching (RIE) process. When the effects of ion impacts are minimized purely chemical etching can occur (Plasma Etching). The diagram below shows schematically contributions of physical and chemical processes to etching in relation to the gas pressure in the reactor and the ion energy. The direction of the arrows shows increase of a given parameter. Selectivity is the ability to etch only a selected material and not another (such as silicon dioxide but not silicon). Anisotropy is a measure of directionality of the etching (vertical vs. horizontal).
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