Dallas Semiconductor 17

Transcription

1 Dallas Semiconductor KEITHLEY MODEL V, 750mA (SOURCE) A B KEITHLEY MODEL 2304 (LOAD) 150Ω 100Ω 4.7kΩ 1kΩ CC V IN 1400mAh Li-POLYMER CELL PC 100Ω DQ V DD 5.1V 0.1µF SNS V SS 0.1µF Li+ PROTECTOR R S +25 C 16% 500 / 4.6%

2 5V 6V) ( ( 1 P-FET ) 1 CCCV 2.5V 1C C/15 (CCCV) CCCV FET 1.5A / 5V 1C 750mAh 3V FET 1.5W 1 I BAT UNREGULATED CHARGE SOURCE R S LINEAR CHARGER V BAT 4.2V V BAT 1C V BAT I BAT 2.5V I BAT C/10 C/15 PREQUALIFICATION CONSTANT CURRENT PULSED CURRENT 1. 3

3 3V FET 4.2V (V CV ) 4.1V FET PNP FET 40% 70% FET V CV I 2 R C/10 C/15 V CV 40% 70% V CV FET t PULSE CCCV 2 t PULSE V CV V CV [t PULSE /(t PULSE +t OFF )] 5% 10% I BAT REGULATED AND CURRENT-LIMITED CHARGE SOURCE PULSE CHARGER V BAT 4.2V I BAT 1C V BAT V BAT IBAT t PULSE 2.5V t OFF C/10 C/15 PREQUALIFICATION CONSTANT CURRENT PULSED CURRENT 2. 4

4 KEITHLEY MODEL V, 750mA (SOURCE) A B KEITHLEY MODEL 2304 (LOAD) 150Ω 100Ω 4.7kΩ 1kΩ CC V IN 1400mAh Li-POLYMER CELL PC 100Ω DQ V DD 5.1V 0.1µF SNS V SS 0.1µF Li+ PROTECTOR R S 3. V CV ( 1s) t PULSE 2 t PULSE V CV 5% 10% Keithley Model V 750mA Keithley 3 A 4.2V (t PULSE ) 875ms ( ) t PULSE +t OFF =14s( ) 6.25% 750mA 6.0V B CCCV 50mA 4.2V B 4.2V Keithley C 3 750mA DC 3.4V 250mA DC 3.4V 50mA 50mA 3.4V (ACR) 5

5 14% 37% +40 C 1400mAh / +40 C ( PC ) +25 C 1400mAh +25 C 500 / ACR +40 C +25 C ACR 0 C +40 C 5 C 4 5 ACR C 500 / CCCV 4.6% 250 (PULSED) LINEAR 200 CHARGING TIME (MIN) CHARGING TEMPERATURE ( C) C 16% 6

6 (PULSED) LINEAR USABLE BATTERY CAPACITY (mah) CHARGING TEMPERATURE ( C) 5. V CV 1C a) +25 C 16% b) +25 C 500 / 4.6% USABLE CAPACITY RELATIVE TO NEW CELL % 97.50% 95.00% 92.50% 90.00% 87.50% PULSED CELL LINEAR CELL 85.00% CHARGE/DISCHARGE CYCLES / 4.6% 7

7 () 1 ( b 1 b 2 b 3..b n ) f t n x f t n ( ) f t EMI 8B10B (BER) Reed-Solomon (FEC) FR-4 ( ) / ( SerDes ) BER b 1 b 2 b 3 b 4 SERIALIZER TRANSMITTER CHANNEL RECEIVER DESERIALIZER b 1 b 2 b 3 b 4 b n b n 1. 8

8 V REF PD LPF 1/n 2 PLL DEC 1/n 1 2. PLL / (FR-4 ) - (PLL) 2 PLL 1 PLL (PD) (LPF) () (1/n) PD PLL (n) V REF V REF LPF (VCXO) 3 / ( ) LPF VCXO / ±50ppm ±50ppm SONET ( 3 3E 4) PLL ±50ppm PLL - 3 / PLL (DEC) LPF ( PLL VCXO) DEC DATA out CLK/DATA in PD LPF CLK rec 3. PLL 9

9 / ) /VCXO 4 /VCXO VCXO VCXO / VCXO VCXO / / ( (LOS) / (V REF ) ( 24 ±4.6ppm) / TCXO 10MHz 10GHz GSM OC- 192 DEC DATA out CLK/DATA in PD CLK rec LOCK DETECT PD MUX LPF V REF 4. / 10

10 ( ) 4 3 (µp) 100ms (30ms ) 2s 10, I/O PIN µc WATCHDOG TIMER GENERATOR 1. ) ( I/O ( 5) - - ( 2 ) (NMI) () I/O ( 1) ( 2) 0000 ( )

11 ) ( µp WATCHDOG COUNTER WATCHDOG TIMEOUT ADDRESS 0000 STARTUP ROUTINE CLEARS RAM AND CONFIGURES ALL PORTS TO INPUTS WATCHDOG INPUT WATCHDOG TIMEOUT START MAIN LOOP TIMEOUT TOGGLE WATCHDOG 4. SUBROUTINE 1 CONDITIONAL BRANCH 1 SUBROUTINE 2 CONDITIONAL BRANCH 2 STARTUP ROUTINE CLEARS RAM AND CONFIGURES ALL PORTS TO INPUTS END MAIN LOOP START MAIN LOOP SET HIGH 2. SUBROUTINE 1 CONDITIONAL BRANCH 1 SET LOW t SUBROUTINE 2 CONDITIONAL BRANCH 2 END MAIN LOOP t

12 + 8 C SWT 100pF 100nF µp MAX823 MAX825 6 MAX6301 MAX6304 MAX6746 MAX6753 SO DIP / 6µA ( 2) SC70 MAX6369 MAX6374 MAX6316 MAX ( 1) 200ms 60s 30ms 60s VCC MR (MAX823/ MAX825 ONLY) (MAX823/ MAX824 ONLY) VCC 1.25V WATCHDOG TRANSITION DETECTOR GENERATOR WATCHDOG TIMER MAX823 MAX824 MAX825 (MAX824/ MAX825 ONLY) V IN R1 R2 C SRT IN GND SRT MAX6748 MAX6749 MAX6750 MAX6751 VCC V CC MAX6749 MAX4751 I/O µp GND C SWT SWT WDS WDS = 0 FOR NORMAL MODE WDS = V CC FOR EXTENDED MODE 6. MAX823 MAX MAX6346 MAX ,000 MAX6746 MAX6751 MAX6746 MAX R1/R2 C SRT WATCHDOG TIMEOUT PERIOD (ms) 10,000 EXTENDED MODE NORMAL MODE , ,000 C SWT (pf) C SWT 8. 13

13 µp I/O 1.5ms 10ms ( 1) MAX6323/MAX6324 MAX6358 MAX6360 (ABS) MAX6721 MAX6729 MAX6722) + (MAX6723 MAX6724) (MAX6721 / EMI MAX6324 MAX6323/ µp 1. MAX823/ MAX824 MAX6316 MAX6322 MAX6746 MAX6753 MAX6301 MAX V, 3.0V, 3.3V 5V 1.575V 5V 2.5V 5V 100mV ( ) ( ) 1.12s 140ms SOT23 SC70 4.3ms, 71ms, 1.12s, 17.9s 100pF 100nF 700ms 70s 1ms, 20ms, 140ms, 1.12s 0.5ms 5s SOT23-8 / SO DIP MAX6369 MAX V, 2.5V, 3.0V, 3.3V 5.0V 30ms 200ms 60s 60s MAX6369 MAX6360 MAX6721 MAX V, 2.5V, 3.0V, 3.3V, 5V; 1.6s 25.6s 100ms MAX6323/ MAX V, 3V, 3.3V 5V 1.5ms 719ms ( ) 10ms 1.3s ( ) 100ms 8 14

14 DESIGN SHOWCASE 1 D 1 150Ω C 1 D 2 V DD 0.5V CS PACK- ) ( C 1 C 1 600Ω CS 600Ω CS 10:1 360Ω 10:1 PACK- PACK- CS Q 2 D 2 Q 1 PACK+ D 1 1kΩ 100Ω 4.7kΩ 1kΩ Li+/POLYMER CELL UV CC V IN DATA PACK- 100Ω C 1 DQ SNS V DD V SS 0.1µF 5.1V Li+ PROTECTOR R S 1. 15

15 V DD t low 150µA ( ) C 1 C VOLTAGE MEASURED AT PIN CHARGE SOURCE dt (t low ) dv t low I C VOLTAGE (V) t low = 7ms CELL VOLTAGE = V CV C TIME (ms) 1.5µF C 1 2. C 1 t low Q 1 Q Hz ( 875ms) ( ) Q 1 C 1 C 1 C 1 ( 2 t low (V CV ) ) 16

16 DESIGN SHOWCASE Dallas Semiconductor IC 80 Dallas Semiconductor ( 1) Dallas RC Semiconductor (VCDL) Maxim/Dallas ( 2) V CC IN INPUT BUFFER FALLING- EDGE DELAY SET OUTPUT BUFFER OUT V REF t D LASER FUSES V CC COMPARATORS LATCH IN OUT RISING- EDGE DELAY V REF 1. DS1000 RC / 17

17 V CC (CONTROL VOLTAGE) DELAY INPUT DELAY OUTPUT 2. VCDL 1/2td td () VCDL ( 3) R REF R FREQ R REF R REF (PLL) (DLL) Dallas Semiconductor EconOscillator TM 4 DS1135 ( 3) VCDL ( ) 4 (R REF ) R FREQ R REF V FREQ V REF DS1075 DS1135 DS1077 DS1100 EconOscillator V CC (CONTROL VOLTAGE) OSCILLATOR OUTPUT 3. VCDL ( ) VCDL EconOscillator Dallas Semiconductor, Inc. 18

18 DAC DS1085 Dallas Semiconductor 5,982,241, ) (US I REF = I FREQ V CC I REF I FREQ LOWPASS FILTER V CC (CONTROL VOLTAGE) OSCILLATOR OUTPUT VOLTAGE COMPARATOR R REF R FREQ DIVIDE-BY-N (PROGRAMMABLE) t D IN1 OUT1 IN OUT IN2 OUT2 IN3 OUT3 4. (DS1135) 19