MCP9700/9700A MCP9701/9701A
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1 Low-Power Linear Active Thermistor ICs Features Tiny Analog Temperature Sensor Available Packages: SC-70-5, SOT-23-5, TO-92-3 Wide Temperature Measurement Range: C to +125 C Accuracy: - ±2 C (max.), 0 C to +70 C (MCP9700A/9701A) - ±4 C (max.), 0 C to +70 C (MCP9700/9701) Optimized for Analog-to-Digital Converters (ADCs): mv/ C (typical) mv/ C (typical) Wide Operating Voltage Range: - = 2.3V to 5.5V - = 3.1V to 5.5V Low Operating Current: 6 µa (typical) Optimized to Drive Large Capacitive Loads Typical Applications Hard Disk Drives and Other PC Peripherals Entertainment Systems Home Appliance Office Equipment Battery Packs and Portable Equipment General Purpose Temperature Monitoring Package Type 3-Pin TO-92 MCP9700/9701 Only 123 Bottom View 1 V OUT GND 3-Pin SOT-23 GND V OUT Description The and family of Linear Active Thermistor Intergrated Circuit (IC) is an analog temperature sensor that converts temperature to analog voltage. It s a low-cost, low-power sensor with an accuracy of ±2 C from 0 C to +70 C (MCP9700A/9701A) ±4 C from 0 C to +70 C (MCP9700/9701) while consuming 6 µa (typical) of operating current. Unlike resistive sensors (such as thermistors), the Linear Active Thermistor IC does not require an additional signal-conditioning circuit. Therefore, the biasing circuit development overhead for thermistor solutions can be avoided by implementing this low-cost device. The voltage output pin (V OUT ) can be directly connected to the ADC input of a microcontroller. The and temperature coefficients are scaled to provide a 1 C/bit resolution for an 8-bit ADC with a reference voltage of 2.5V and 5V, respectively. The and provide a low-cost solution for applications that require measurement of a relative change of temperature. When measuring relative change in temperature from +25 C, an accuracy of ±1 C (typical) can be realized from 0 C to +70 C. This accuracy can also be achieved by applying system calibration at +25 C. In addition, this family is immune to the effects of parasitic capacitance and can drive large capacitive loads. This provides Printed Circuit Board (PCB) layout design flexibility by enabling the device to be remotely located from the microcontroller. Adding some capacitance at the output also helps the output transient response by reducing overshoots or undershoots. However, capacitive load is not required for sensor output stability. 5-Pin SC-70 NC 1 5 NC GND V OUT Microchip Technology Inc. DS21942D-page 1
2 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings : V Storage temperature: C to +150 C Ambient Temp. with Power Applied: C to +125 C Junction Temperature (T J ): C ESD Protection On All Pins (HBM:MM):... (4 kv:200v) Latch-Up Current at Each Pin:... ±200 ma Notice: Stresses above those listed under Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS : = 2.3V to 5.5V, GND = Ground, T A = -40 C to +125 C and No load. : = 3.1V to 5.5V, GND = Ground, T A = -10 C to +125 C and No load. Parameter Sym Min Typ Max Unit Conditions Power Supply Operating Voltage Range V V Operating Current I DD 6 12 µa Power Supply Rejection Δ C/Δ 0.1 C/V Sensor Accuracy (Notes 1, 2) T A = +25 C T ACY ±1 C T A = 0 C to +70 C T ACY -2.0 ± C MCP9700A/9701A T A = -40 C to +125 C T ACY -2.0 ± C MCP9700A T A = -10 C to +125 C T ACY -2.0 ± C MCP9701A T A = 0 C to +70 C T ACY -4.0 ± C MCP9700/9701 T A = -40 C to +125 C T ACY -4.0 ± C MCP9700 T A = -10 C to +125 C T ACY -4.0 ± C MCP9701 Sensor Output Output Voltage, T A = 0 C V 0 C 500 mv Output Voltage, T A = 0 C V 0 C 400 mv Temperature Coefficient T C 10.0 mv/ C T C 19.5 mv/ C Output Non-linearity V ONL ±0.5 C T A = 0 C to +70 C (Note 2) Output Current I OUT 100 µa Output Impedance Z OUT 20 Ω I OUT = 100 µa, f = 500 Hz Output Load Regulation ΔV OUT / ΔI OUT 1 Ω T A = 0 C to +70 C, I OUT = 100 µa Note 1: The family accuracy is tested with = 3.3V, while the accuracy is tested with = 5.0V. 2: The and family is characterized using the first-order or linear equation, as shown in Equation : The and family is characterized and production tested with a capacitive load of 1000 pf. 4: SC-70-5 package thermal response with 1x1 inch, dual-sided copper clad, TO-92-3 package thermal response without PCB (leaded). DS21942D-page Microchip Technology Inc.
3 DC ELECTRICAL CHARACTERISTICS (CONTINUED) : = 2.3V to 5.5V, GND = Ground, T A = -40 C to +125 C and No load. : = 3.1V to 5.5V, GND = Ground, T A = -10 C to +125 C and No load. Parameter Sym Min Typ Max Unit Conditions Turn-on Time t ON 800 µs Typical Load Capacitance (Note 3) C LOAD 1000 pf SC-70 Thermal Response to 63% t RES 1.3 s 30 C (Air) to +125 C TO-92 Thermal Response to 63% t RES 1.65 s (Fluid Bath) (Note 4) Note 1: The family accuracy is tested with = 3.3V, while the accuracy is tested with = 5.0V. 2: The and family is characterized using the first-order or linear equation, as shown in Equation : The and family is characterized and production tested with a capacitive load of 1000 pf. 4: SC-70-5 package thermal response with 1x1 inch, dual-sided copper clad, TO-92-3 package thermal response without PCB (leaded). M TEMPERATURE CHARACTERISTICS : = 2.3V to 5.5V, GND = Ground, T A = -40 C to +125 C and No load. : = 3.1V to 5.5V, GND = Ground, T A = -10 C to +125 C and No load. Parameters Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range T A C (Note) T A C (Note) Operating Temperature Range T A C Storage Temperature Range T A C Thermal Package Resistances Thermal Resistance, 5LD SC-70 θ JA 331 C/W Thermal Resistance, 3LD SOT-23 θ JA 336 C/W Thermal Resistance, 3LD TO-92 θ JA C/W Note: Operation in this range must not cause T J to exceed Maximum Junction Temperature (+150 C) Microchip Technology Inc. DS21942D-page 3
4 b N E1 E 1 2 e e1 D A A2 c φ A1 L DS21942D-page Microchip Technology Inc.
5 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X /XX Device Temperature Range Package Device: MCP9700T: Linear Active Thermistor IC, MCP9700AT: Linear Active Thermistor IC, MCP9701T: Linear Active Thermistor IC, MCP9701AT: Linear Active Thermistor IC, Temperature Range: E = -40 C to +125 C Package: LT = Plastic Small Outline Transistor, 5-lead TO = Plastic Small Outline Transistor, 3-lead TT = Plastic Small Outline Transistor, 3-lead Examples: a) MCP9700T-E/LT: Linear Active Thermistor b) MCP9700-E/TO: Linear Active Thermistor IC, 3LD TO-92 package. c) MCP9700T-E/OT: Linear Active Thermistor d) MCP9700AT-E/LT: Linear Active Thermistor e) MCP9700AT-E/OT: Linear Active Thermistor a) MCP9701T-E/LT: Linear Active Thermistor b) MCP9701-E/TO: Linear Active Thermistor IC, 3LD TO-92 package. c) MCP9701T-E/OT: Linear Active Thermistor d) MCP9701AT-E/LT: Linear Active Thermistor e) MCP9701AT-E/OT: Linear Active Thermistor 2007 Microchip Technology Inc. DS21942D-page 17
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a FEATURES EASY TO USE Pin-Strappable Gains of 0 and 00 All Errors Specified for Total System Performance Higher Performance than Discrete In Amp Designs Available in -Lead DIP and SOIC Low Power,.3 ma
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
800mA and 1A Low Dropout Positive Regulator 2.85V, 3V, 3.3V, 5V, and Adjustable
A 8mA and A Low Dropout Positive Regulator.85V, 3V, 3.3V, 5V, and Adjustable FEATURES.85V, 3V, 3.3V, 5V, and ADJUSTABLE VERSIONS.85V MODEL FOR SCSI- ACTIVE TERMINATION OUTPUT CURRENT: : 8mA max A: A max
AME. High PSRR, Low Noise, 600mA CMOS Regulator AME8855. n General Description. n Typical Application. n Features. n Functional Block Diagram
8855 n General Description n Typical Application The 8855 family of positive, CMOS linear regulators provide low dropout voltage(42mv@6ma), low quiescent current, and low noise CMOS LDO. These rugged devices
2 Input NAND Gate L74VHC1G00
Input NAND Gate The is an advanced high speed CMOS input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining
DATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN/PNP general purpose transistor Supersedes data of 2002 Aug 09 2002 Nov 22 FEATURES High current (500 ma) 600 mw total power dissipation Replaces
MM74C908 Dual CMOS 30-Volt Relay Driver
Dual CMOS 30-Volt Relay Driver General Description The MM74C908 is a general purpose dual high voltage driver capable of sourcing a minimum of 250 ma at V OUT = V CC 3V, and T J = 65 C. The MM74C908 consists
MAX6033 High-Precision, Low-Dropout SOT23 Series Voltage Reference
MAX633 High-Precision, Low-Dropout SOT23 Series General Description The MAX633 ultra-high-precision series voltage reference features a low 7ppm/ C (max) temperature coefficient and a low dropout voltage
TrenchMOS ultra low level FET
M3D32 Rev. 1 27 September 22 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT457 (TSOP6). 2.
DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D86 Supersedes data of 2003 Dec 0 2004 Nov 05 FEATURES High current. APPLICATIONS Linear voltage regulators Low side switch Supply line switch for negative
DATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 23 Nov 2 24 Nov 5 FEATURES High current Two current gain selections. APPLICATIONS Linear voltage regulators High side switches
DATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13.
DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PBSS5350D 50 V low V CEsat PNP transistor Supersedes data of 2001 Jul 13 2001 Nov 13 FEATURES Low collector-emitter saturation voltage High current capability
LM50 SOT-23 Single-Supply Centigrade Temperature Sensor
SOT-23 Single-Supply Centigrade Temperature Sensor General Description The LM50 is a precision integrated-circuit temperature sensor that can sense a 40 C to +125 C temperature range using a single positive
DATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14.
DISCRETE SEMICONDUCTORS DATA SHEET age M3D087 PBSS4540Z 40 V low V CEsat NPN transistor Supersedes data of 2001 Jul 24 2001 Nov 14 FEATURES Low collector-emitter saturation voltage High current capabilities
DISCRETE SEMICONDUCTORS DATA SHEET. BLF245 VHF power MOS transistor
DISCRETE SEMICONDUCTORS DATA SHEET September 1992 FEATURES High power gain Low noise figure Easy power control Good thermal stability Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement
SGM nA, Single Rail-to-Rail I/O Operational Amplifier
GENERAL DESCRIPTION The SGM8041 is guaranteed to operate with a single supply voltage as low as 1.4V, while drawing less than 710nA (TYP) of quiescent current. This device is also designed to support rail-to-rail
DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D32 PBSS424DPN 4 V low V CEsat NPN/PNP transistor 23 Feb 2 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability
9A HIGH-SPEED MOSFET DRIVERS
9A HIGH-SPEED MOSFET DRIVERS 9A HIGH-SPEED MOSFET DRIVERS FEATURES Tough CMOS Construction High Peak Output Current.................. 9A High Continuous Output Current........ 2A Max Fast Rise and Fall
RT9166/A. 300/600mA, Ultra-Fast Transient Response LDO Regulator. General Description. Features. Applications. Ordering Information
RT9166/A 300/600mA, Ultra-Fast Transient Response LDO Regulator General Description The RT9166/A series are CMOS low dropout regulators optimized for ultra-fast transient response. The devices are capable
Octal buffer/line driver (3-State)
FEATURES Octal bus interface Functio similar to the ABT4 Provides ideal interface and increases fan-out of MOS Microprocessors Efficient pinout to facilitate PC board layout 3-State buffer outputs sink
SGM48000/1/2 High Speed, Dual Power MOSFET Drivers
SGM000// GENERAL DESCRIPTION The SGM000// ICs are matched dual-drivers. Unique circuit design provides very high speed drivers capable of delivering peak currents of A into highly capacitive loads. Improved
GENERAL DESCRIPTION The PT5128 is a dual channel low-dropout voltage regulator designed for portable and wireless applications that require high PSRR, low quiescent current and excellent line and load
MM74C150 MM82C19 16-Line to 1-Line Multiplexer 3-STATE 16-Line to 1-Line Multiplexer
MM74C150 MM82C19 16-Line to 1-Line Multiplexer 3-STATE 16-Line to 1-Line Multiplexer General Description The MM74C150 and MM82C19 multiplex 16 digital lines to 1 output. A 4-bit address code determines