A POLYSACCHARIDE BIOPROTONIC FIELD EFFECT TRANSISTOR
|
|
- Olivia Melton
- 5 years ago
- Views:
Transcription
1 Supplementary Information A POLYSACCHARIDE BIOPROTONIC FIELD EFFECT TRANSISTOR Chao Zhong, 1 Yingxin Deng, 1 Anita Fadavi Roudsari, 3 Adnan Kapetanovic, 1 M.P. Anantram 2 & Marco Rolandi 1 1 Department of Materials Science and Engineering 2 Department of Electrical Engineering University of Washington, Seattle, WA (USA) 3 Department of Electrical Engineering University of Waterloo, Waterloo (Canada) 1
2 Supplementary Figures a 4.0 b 0.2 M-chitosan, PdH x, H 2 Current (µa) - Current (µa) 0.1 M-chitosan, Pd contact,n 2 M-chitosan, Au contact H 2 Chitin, Pd contact, H c Bias (V) d Bias (V) Current (µa) - Current (µa) Bias (V) Bias (V) Supplementary Figure S1 Current voltage characteristics of nanofiber polysaccharide thin films (1x1 cm 2, 300 µm thick) measured as a function of contact material, polysaccharide composition. (a,b) Maleic chitosan measured at 75% RH with Au contacts (orange), Pd contacts in N 2 atmosphere (blue), PdH x contact in 5% H 2 atmosphere (red). (c,d) Chitin (green) and maleic Chitosan (red) measured at 75% RH with PdH x contacts in 5% H 2 atmosphere. Note: b, d is magnified curve from a, c, respectively. 2
3 a I ds (na) V -5 V -2 V 0 V 2 V 5 V 10 V b n H + ( cm -3 ) V ds (V) V gs (V) Supplementary Figure S2 Protonic transistors transfer characteristics for device 2 (a) Plot of I ds as a function of V ds for different V gs (RH 75%). For device with PdH x contacts shown in figure S2. Device dimensions: length 5.0 µm, width 12 µm, height 120 nm. (b) Plot of channel proton density as function of gate voltage. Points are the values of n derived from the IV transfer data and assuming n= 8.9 x cm -3 at V gs =0, which in this device results a mobility of (3.4 ± 0.3) 10-3 cm 2 V -1 s -1. Line represents the values of n derived from Q/ V from simulations and estimated channel volume from AFM data. 3
4 Supplementary Figure S3 2D log plot of simulated current density different V gs for device 1 shown in figure 1. (Device dimensions: length 8.6 µm, width 3.5 µm, height 82 nm). (a) V gs = -15 V, (b) V gs = 0 V, (c) V gs = 15 V. The X and Y axis represents the direction along the length and height of the devices, respectively. 4
5 a I ds (na) V ds (V) -15 V -10 V -5 V -2 V 0 V 2 V 5 V 10 V 15 V Supplementary Figure S4 Hysteresis curves for device shown in Fig 3. 5
6 Supplementary Table S1. The average dimensions of the films on two different three-terminal devices determined based on AFM height images Devices Length (µm) Width (µm) Height (nm) Cross section Area ( m 2) ± ± ± ±
7 Supplementary Methods Maleic Chitosan Proton Concentration Estimate In order to calculate the proton concentration, we first derive the concentration of carboxyl functional groups. The hydration level for maleic chitosan at 75% is 20.2 ± 1.3 wt%. Here we use 20 wt%. The degree of substitution (DS) of maleic chitosan=0.85. The average molecular weight for each repeating unit for maleic chitosan = The carboxyl group concentration C (COOH ) can be calculated by the following equation: C (COOH ) = 0.85 C (repeat unit) = 0.85 n(repeat unit)/v Total = 0.85 n(repeat unit)/[v ( H 2 O ) + V ( maleic chitosan ) ] =0.85 (0.8/250.6)/ [0.2/ρ ( H 2 O ) + 0.8/ ρ ( maleic chitosan ) ] Because ρ ( H 2 O ) =1.0 g/cm 3, ρ (maleic chitosan ) = 1.4 g/cm 3 (based on the density of chitin= g/cm 3 ) 1 We obtain C ( COOH ) = 0.35*10 4 mol/m 3 The free protons can be considered to mainly come from dissociation of carboxyl groups on the polysaccharide molecules. The reported pka of carboxylmethyl chitosan ( CH 2 COOH) is The maleoyl group ( COCH=CHCOOH) in maleic chitosan is a relatively stronger electron withdrawing group (EWG) compared with carboxylmethyl group, and thus afford maleic chitosan a stronger acid with a relatively lower pka_enref_4. For this consideration, we used the pka of maleic chitosan
8 The initial concentration of carboxyl group is A 0 and after dissociation, the concentration becomes (A 0 - A) After dissociation: RCOOH RCOO - + H + A A 0 -A A A pka = - log 10 Ka = - log 10 ([RCOO - ] [H + ]/[RCOOH]) = - log 10 {[RCOO - ] [H + ]/([RCOOH] 0 - [RCOO - ]) } = - log 10 [A 2 /(A 0 - A)] A 0 = 0.35*10 4 mol/m 3, pka = 3.2, then we obtain A = 1.48 mol/m 3 = m -3 or 8.9 x cm -3. Note: C (H 2 O ) : Concentration of water molecules in the system C (COOH ) : Concentration of carboxyl molecules in the system N ( H 2 O ) : Total amount of water molecules in the system (in moles) N (COOH ) : Total amount of carboxyl molecules in the system (in moles) V Total : The total volume of the system V ( H 2 O ) : the volume of water molecules V ( maleic chitosan ) : the volume of maleic chitosan molecules Calculation of proton mobility and proton concentration Based on the dimensional data, device 1 has the following parameters (Supplementary Table S1): Length (L) = 8.6 µm, Width (W) = 3.5 µm, Height (H) = 82 ± 1 nm; and Area of cross-section (A) = 232 ± m 2. 8
9 We also define at V g = 0, Proton Concentrations (n 0 ) = cm -3, and based on slope of I/V curve at V g = 0, 1/R 0 = (1.90 ± 3) 10-9 Ω -1 from two equation, σ 0 = L/(R 0 *A), µ = σ 0 /(N 0 * e) We obtain µ= (4.9 ± 0.5) 10-3 cm 2 V -1 s -1 Device 2 has: Length (L) = 5 µm, Width (W) = 12 µm, Height (H) = 120 ± 3 nm; and Area of cross-section (A) = 1110 ± m 2. Using a similar approach described above, we obtain µ = (3.4 ± 0.3) 10-3 cm 2 V -1 s -1 for device 2. Supplementary References 35 Li, J., Revol, J. F., Naranjo, E. & Marchessault, R. H. Effect of Electrostatic Interaction on Phase Separation Behaviour of Chitin Crystallite Suspensions. International Journal of Biological Macromolecules 18, ,(1996). 36 Chen, L. Y., Tian, Z. G. & Du, Y. M. Synthesis and Ph Sensitivity of Carboxymethyl Chitosan-Based Polyampholyte Hydrogels for Protein Carrier Matrices. Biomaterials 25, ,(2004). 9
Supplementary Materials for
advances.sciencemag.org/cgi/content/full/2/5/e1600112/dc1 Supplementary Materials for Proton conductivity in ampullae of Lorenzini jelly Erik E. Josberger, Pegah Hassanzadeh, Yingxin Deng, Joel Sohn, Michael
More informationCopyright Yingxin Deng
Copyright 2015 Yingxin Deng Bioprotonics: Memories, Transistors, and ph Modulators Yingxin Deng A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy
More informationH 1 -type and OH 2 -type biological protonic semiconductors and complementary devices
OPEN SUBJECT AREAS: BIONANOELECTRONICS BIOMATERIALS BIOPHYSICS ELECTRICAL AND ELECTRONIC ENGINEERING H 1 -type and OH 2 -type biological protonic semiconductors and complementary devices 1 1,2 1 3 4 1
More informationSupplementary Figures
Supplementary Figures Supplementary Figure 1 Molecular structures of functional materials involved in our SGOTFT devices. Supplementary Figure 2 Capacitance measurements of a SGOTFT device. (a) Capacitance
More informationFrom Gen. Chem.: 1. WHAT is an ACID? 2. WHAT is a BASE?
Expt. 1: Biological Buffers Goals: 1. Learn how to use the Henderson-Hasselbach (H-H) eqn. 2. Learn how to prepare buffers. 3. Learn something about physical properties of biological buffers which are
More informationSupplementary Figure S1. AFM images of GraNRs grown with standard growth process. Each of these pictures show GraNRs prepared independently,
Supplementary Figure S1. AFM images of GraNRs grown with standard growth process. Each of these pictures show GraNRs prepared independently, suggesting that the results is reproducible. Supplementary Figure
More informationElectronic Supplementary Information
Electronic Supplementary Information Multicomponent Hydrogels from Enantiomeric amino acid derivatives: Helical Nanofibers, Handedness and Self-Sorting Bimalendu Adhikari, Jayanta Nanda and Arindam Banerjee*
More informationSupplementary Figure 1 a) Scheme of microfluidic device fabrication by photo and soft lithography,
a b 1 mm Supplementary Figure 1 a) Scheme of microfluidic device fabrication by photo and soft lithography, (a1, a2) 50nm Pd evaporated on Si wafer with 100 nm Si 2 insulating layer and 5nm Cr as an adhesion
More informationSUPPLEMENTARY INFORMATION
Supplementary Information Efficient inorganic-organic hybrid heterojunction solar cells containing perovskite compound and polymeric hole conductors Jin Hyuck Heo, Sang Hyuk Im, Jun Hong Noh, Tarak N.
More information6.012 Electronic Devices and Circuits Spring 2005
6.012 Electronic Devices and Circuits Spring 2005 May 16, 2005 Final Exam (200 points) -OPEN BOOK- Problem NAME RECITATION TIME 1 2 3 4 5 Total General guidelines (please read carefully before starting):
More informationInvestigation of the Thermal Noise of MOS Transistors under Analog and RF Operating Conditions
Investigation of the Thermal Noise of MOS Transistors under Analog and RF Operating Conditions Ralf Brederlow 1, Georg Wenig 2, and Roland Thewes 1 1 Infineon Technologies, Corporate Research, 2 Technical
More informationWater. Water participates in H-bonding with biomolecules.
Water Most biochemical reactions occur in an aqueous environment. Water is highly polar because of its bent geometry. Water is highly cohesive because of intermolecular hydrogen bonding. Water participates
More informationLecture 28 - The Long Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 18, 2007
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 28-1 Lecture 28 - The Long Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 18, 2007 Contents: 1. Second-order and
More informationSUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION Flexible, high-performance carbon nanotube integrated circuits Dong-ming Sun, Marina Y. Timmermans, Ying Tian, Albert G. Nasibulin, Esko I. Kauppinen, Shigeru Kishimoto, Takashi
More informationThe Devices. Jan M. Rabaey
The Devices Jan M. Rabaey Goal of this chapter Present intuitive understanding of device operation Introduction of basic device equations Introduction of models for manual analysis Introduction of models
More informationEE105 Fall 2014 Microelectronic Devices and Circuits. NMOS Transistor Capacitances: Saturation Region
EE105 Fall 014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1 NMOS Transistor Capacitances: Saturation Region Drain no longer connected to channel
More informationFerroelectric Field-Effect Transistors Based on MoS 2 and
Supplementary Information for: Ferroelectric Field-Effect Transistors Based on MoS 2 and CuInP 2 S 6 Two-Dimensional Van der Waals Heterostructure Mengwei Si, Pai-Ying Liao, Gang Qiu, Yuqin Duan, and Peide
More informationElectrical Contacts to Carbon Nanotubes Down to 1nm in Diameter
1 Electrical Contacts to Carbon Nanotubes Down to 1nm in Diameter Woong Kim, Ali Javey, Ryan Tu, Jien Cao, Qian Wang, and Hongjie Dai* Department of Chemistry and Laboratory for Advanced Materials, Stanford
More informationSquid Beak Inspired Water Processable Chitosan Composites with Tunable Mechanical Properties
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry B. This journal is The Royal Society of Chemistry 16 Squid Beak Inspired Water Processale Chitosan Composites with Tunale Mechanical
More information6.012 Electronic Devices and Circuits
Page 1 of 10 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits Exam No. 2 Thursday, November 5, 2009 7:30 to
More informationSupplementary Figure 1. A photographic image of directionally grown perovskite films on a glass substrate (size: cm).
Supplementary Figure 1. A photographic image of directionally grown perovskite films on a glass substrate (size: 1.5 4.5 cm). 1 Supplementary Figure 2. Optical microscope images of MAPbI 3 films formed
More informationThe Devices. Devices
The The MOS Transistor Gate Oxyde Gate Source n+ Polysilicon Drain n+ Field-Oxyde (SiO 2 ) p-substrate p+ stopper Bulk Contact CROSS-SECTION of NMOS Transistor Cross-Section of CMOS Technology MOS transistors
More informationSUPPLEMENTARY INFORMATION
doi:.38/nature09979 I. Graphene material growth and transistor fabrication Top-gated graphene RF transistors were fabricated based on chemical vapor deposition (CVD) grown graphene on copper (Cu). Cu foil
More informationSupplementary Information
Supplementary Information Ambient effects on electrical characteristics of CVD-grown monolayer MoS 2 field-effect transistors Jae-Hyuk Ahn, 1,2 William M. Parkin, 1 Carl H. Naylor, 1 A. T. Charlie Johnson,
More informationMOSFET Physics: The Long Channel Approximation
MOSFET Physics: The ong Channel Approximation A basic n-channel MOSFET (Figure 1) consists of two heavily-doped n-type regions, the Source and Drain, that comprise the main terminals of the device. The
More informationTOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168. DC I D 200 ma Pulse I DP 800
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm Excellent switching time: ton = 14 ns (typ.) High
More informationPreparation of different buffer solutions
Preparation of different buffer solutions 1 - Buffers: - All biochemical reactions occur under strict conditions of the concentration of hydrogen ion. - Biological life cannot withstand large changes in
More informationPolyelectrolyte hydrogels
Polyelectrolyte hydrogels Last Day: Physical hydrogels Structure and physical chemistry Today: polyelectrolyte hydrogels, complexes, and coacervates Polyelectrolyte multilayers theory of swelling in ionic
More informationGeneral Phenomena: Law of mass action, dissociation of water, ph, buffers
General Phenomena: Law of mass action, dissociation of water, ph, buffers Ionization of Water, Weak Acids and Weak Bases Many properties of water can be explained in terms of uncharged H 2 O molecule Small
More informationLecture 3: CMOS Transistor Theory
Lecture 3: CMOS Transistor Theory Outline Introduction MOS Capacitor nmos I-V Characteristics pmos I-V Characteristics Gate and Diffusion Capacitance 2 Introduction So far, we have treated transistors
More informationThe Biochemistry of Water
The Biochemistry of Water The Biochemistry of Water 2.3 Water, ph, and Buffers Water is the solvent of life All organisms are composed primarily of water, such that most eukaryotic organisms are about
More informationMOS Transistor I-V Characteristics and Parasitics
ECEN454 Digital Integrated Circuit Design MOS Transistor I-V Characteristics and Parasitics ECEN 454 Facts about Transistors So far, we have treated transistors as ideal switches An ON transistor passes
More informationECE-342 Test 3: Nov 30, :00-8:00, Closed Book. Name : Solution
ECE-342 Test 3: Nov 30, 2010 6:00-8:00, Closed Book Name : Solution All solutions must provide units as appropriate. Unless otherwise stated, assume T = 300 K. 1. (25 pts) Consider the amplifier shown
More informationSpring Semester 2012 Final Exam
Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters
More informationElectronic Supplementary Information. Molecular Antenna Tailored Organic Thin-film Transistor for. Sensing Application
Electronic Supplementary Material (ESI) for Materials Horizons. This journal is The Royal Society of Chemistry 2017 Electronic Supplementary Information Molecular Antenna Tailored Organic Thin-film Transistor
More informationChem 5 PAL Worksheet Acids and Bases Smith text Chapter 8
D.CHO3HE.KOHB.NHC.CHC3OHHCl3F.H.CHHCH3COG.H2HCHEM 5 PAL Worksheet Acids and Bases Fall 2017 Chem 5 PAL Worksheet Acids and Bases Smith text Chapter 8 Many substances in the body are acids and bases. Many
More informationDigital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. The Devices. July 30, Devices.
Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The July 30, 2002 1 Goal of this chapter Present intuitive understanding of device operation Introduction
More informationChapter 4 Field-Effect Transistors
Chapter 4 Field-Effect Transistors Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 5/5/11 Chap 4-1 Chapter Goals Describe operation of MOSFETs. Define FET characteristics in operation
More informationVLSI Design and Simulation
VLSI Design and Simulation Performance Characterization Topics Performance Characterization Resistance Estimation Capacitance Estimation Inductance Estimation Performance Characterization Inverter Voltage
More informationSupplementary Figure 1. Supplementary Figure 1 Characterization of another locally gated PN junction based on boron
Supplementary Figure 1 Supplementary Figure 1 Characterization of another locally gated PN junction based on boron nitride and few-layer black phosphorus (device S1). (a) Optical micrograph of device S1.
More informationElectrical Characteristics of Multilayer MoS 2 FET s
Electrical Characteristics of Multilayer MoS 2 FET s with MoS 2 /Graphene Hetero-Junction Contacts Joon Young Kwak,* Jeonghyun Hwang, Brian Calderon, Hussain Alsalman, Nini Munoz, Brian Schutter, and Michael
More information1.12 Acid Base Equilibria
.2 Acid Base Equilibria BronstedLowry Definition of acid Base behaviour A BronstedLowry acid is defined as a substance that can donate a proton. A BronstedLowry base is defined as a substance that can
More informationNiCl2 Solution concentration. Etching Duration. Aspect ratio. Experiment Atmosphere Temperature. Length(µm) Width (nm) Ar:H2=9:1, 150Pa
Experiment Atmosphere Temperature #1 # 2 # 3 # 4 # 5 # 6 # 7 # 8 # 9 # 10 Ar:H2=9:1, 150Pa Ar:H2=9:1, 150Pa Ar:H2=9:1, 150Pa Ar:H2=9:1, 150Pa Ar:H2=9:1, 150Pa Ar:H2=9:1, 150Pa Ar:H2=9:1, 150Pa Ar:H2=9:1,
More informationLecture 29 - The Long Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 20, 2007
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 29-1 Lecture 29 - The Long Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 20, 2007 Contents: 1. Non-ideal and second-order
More information(b) (i) Hydrogen bond(ing) / H bonding / H bonds Not just hydrogen 1
M.(a) 94 05.5 (b) (i) Hydrogen bond(ing) / H bonding / H bonds Not just hydrogen OR mark for all lone pairs mark for partial charges on the O and the H that are involved in H bonding mark for the H-bond,
More informationMOS Transistor Properties Review
MOS Transistor Properties Review 1 VLSI Chip Manufacturing Process Photolithography: transfer of mask patterns to the chip Diffusion or ion implantation: selective doping of Si substrate Oxidation: SiO
More informationELECTRONICS IA 2017 SCHEME
ELECTRONICS IA 2017 SCHEME CONTENTS 1 [ 5 marks ]...4 2...5 a. [ 2 marks ]...5 b. [ 2 marks ]...5 c. [ 5 marks ]...5 d. [ 2 marks ]...5 3...6 a. [ 3 marks ]...6 b. [ 3 marks ]...6 4 [ 7 marks ]...7 5...8
More informationSupplementary Figure 1 Experimental setup for crystal growth. Schematic drawing of the experimental setup for C 8 -BTBT crystal growth.
Supplementary Figure 1 Experimental setup for crystal growth. Schematic drawing of the experimental setup for C 8 -BTBT crystal growth. Supplementary Figure 2 AFM study of the C 8 -BTBT crystal growth
More informationHW 5 posted due in two weeks Lab this week Midterm graded Project to be launched in week 7
HW 5 posted due in two weeks Lab this week Midterm graded Project to be launched in week 7 2 What do digital IC designers need to know? 5 EE4 EECS4 6 3 0< V GS - V T < V DS Pinch-off 7 For (V GS V T )
More informationSupplementary Figure 1. Film thickness measurement. (a) AFM images of the perovskite
Supplementary Figure 1. Film thickness measurement. (a) AFM images of the perovskite film with a straight edge which was created by scratching with a tweezer. (b) Profile along the line highlighted in
More informationIntrinsic Electronic Transport Properties of High. Information
Intrinsic Electronic Transport Properties of High Quality and MoS 2 : Supporting Information Britton W. H. Baugher, Hugh O. H. Churchill, Yafang Yang, and Pablo Jarillo-Herrero Department of Physics, Massachusetts
More informationField effect = Induction of an electronic charge due to an electric field Example: Planar capacitor
JFETs AND MESFETs Introduction Field effect = Induction of an electronic charge due to an electric field Example: Planar capacitor Why would an FET made of a planar capacitor with two metal plates, as
More information(a) (b) Supplementary Figure 1. (a) (b) (a) Supplementary Figure 2. (a) (b) (c) (d) (e)
(a) (b) Supplementary Figure 1. (a) An AFM image of the device after the formation of the contact electrodes and the top gate dielectric Al 2 O 3. (b) A line scan performed along the white dashed line
More informationElectronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices
Electronic Circuits 1 Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage
More informationHigh operational stability of n-type organic transistors based on Naphthalene Bisimide
High operational stability of n-type organic transistors based on Naphthalene Bisimide Maria C.R. de Medeiros, Izabela Tszydel 2, Tomasz Marszalek 2, 3, Malgorzata Zagorska 2, Jacek Ulanski 2, Henrique
More informationElectrostatic Single-walled Carbon Nanotube (CNT) Field Effect Transistor Device Modeling
Electrostatic Single-walled Carbon Nanotube (CNT) Field Effect Transistor Device Modeling Henok Abebe The Service USC Viterbi School of Engineering Information Sciences Institute Collaborator Ellis Cumberbatch
More information4. Acid Base Equilibria
4. Acid Base Equilibria BronstedLowry Definition of acid Base behaviour A BronstedLowry acid is defined as a substance that can donate a proton. A BronstedLowry base is defined as a substance that can
More informationA. Optimizing the growth conditions of large-scale graphene films
1 A. Optimizing the growth conditions of large-scale graphene films Figure S1. Optical microscope images of graphene films transferred on 300 nm SiO 2 /Si substrates. a, Images of the graphene films grown
More informationPractice 3: Semiconductors
Practice 3: Semiconductors Digital Electronic Circuits Semester A 2012 VLSI Fabrication Process VLSI Very Large Scale Integration The ability to fabricate many devices on a single substrate within a given
More informationFIG. 1: (Supplementary Figure 1: Large-field Hall data) (a) AHE (blue) and longitudinal
FIG. 1: (Supplementary Figure 1: Large-field Hall data) (a) AHE (blue) and longitudinal MR (red) of device A at T =2 K and V G - V G 0 = 100 V. Bold blue line is linear fit to large field Hall data (larger
More information12. Acid Base Equilibria
2. Acid Base Equilibria BronstedLowry Definition of acid Base behaviour A BronstedLowry acid is defined as a substance that can donate a proton. A BronstedLowry base is defined as a substance that can
More informationPage 2. M1.(a) [H + ] = or = Allow ( ) M1 1 = If [HX] / [X - ] or M2. M2 1
M.(a) [H + ] = or =.74 0 5 Allow ( ) M = 3.08 0 5 If [HX] / [X - ] or. upside down, or any addition or subtraction lose M & ph = 4.5 (correct answer scores 3) Can score for correct ph conseq to their [H
More informationModule 8: "Stability of Colloids" Lecture 38: "" The Lecture Contains: Calculation for CCC (n c )
The Lecture Contains: Calculation for CCC (n c ) Relation between surface charge and electrostatic potential Extensions to DLVO theory file:///e /courses/colloid_interface_science/lecture38/38_1.htm[6/16/2012
More informationFlexible Piezoelectric-Induced Pressure Sensors for Static. Measurements Based on Nanowires/Graphene Heterostructures
Flexible Piezoelectric-Induced Pressure Sensors for Static Measurements Based on Nanowires/Graphene Heterostructures Zefeng Chen,, Zhao Wang,, Xinming Li,*, Yuxuan Lin, Ningqi Luo, Mingzhu Long, Ni Zhao,
More informationBiasing the CE Amplifier
Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC base-emitter voltage (note: normally plot vs. base current, so we must return to Ebers-Moll): I C I S e V BE V th I S e V th
More informationChapter 5 MOSFET Theory for Submicron Technology
Chapter 5 MOSFET Theory for Submicron Technology Short channel effects Other small geometry effects Parasitic components Velocity saturation/overshoot Hot carrier effects ** Majority of these notes are
More informationLearning Guide for Chapter 7 - Organic Reactions I
Learning Guide for Chapter 7 - rganic Reactions I I. Introduction to Reactions II. Principles of Kinetics III. Principles of Thermodynamics IV. Nucleophiles and Electrophiles V. Acids and Bases What a
More informationCHAPTER 3: TRANSISTOR MOSFET DR. PHAM NGUYEN THANH LOAN. Hà Nội, 9/24/2012
1 CHAPTER 3: TRANSISTOR MOSFET DR. PHAM NGUYEN THANH LOAN Hà Nội, 9/24/2012 Chapter 3: MOSFET 2 Introduction Classifications JFET D-FET (Depletion MOS) MOSFET (Enhancement E-FET) DC biasing Small signal
More informationUniversity of Toronto. Final Exam
University of Toronto Final Exam Date - Apr 18, 011 Duration:.5 hrs ECE334 Digital Electronics Lecturer - D. Johns ANSWER QUESTIONS ON THESE SHEETS USING BACKS IF NECESSARY 1. Equation sheet is on last
More information5.1.3 Acids, Bases and Buffers
5..3 Acids, Bases and Buffers BronstedLowry Definition of Acid Base behaviour A BronstedLowry acid is defined as a substance that can donate a proton. A BronstedLowry base is defined as a substance that
More informationSUPPLEMENTARY INFORMATION
Collapse of superconductivity in a hybrid tin graphene Josephson junction array by Zheng Han et al. SUPPLEMENTARY INFORMATION 1. Determination of the electronic mobility of graphene. 1.a extraction from
More informationOperation and Modeling of. The MOS Transistor. Second Edition. Yannis Tsividis Columbia University. New York Oxford OXFORD UNIVERSITY PRESS
Operation and Modeling of The MOS Transistor Second Edition Yannis Tsividis Columbia University New York Oxford OXFORD UNIVERSITY PRESS CONTENTS Chapter 1 l.l 1.2 1.3 1.4 1.5 1.6 1.7 Chapter 2 2.1 2.2
More informationLecture 9 MOSFET(II) MOSFET I V CHARACTERISTICS(contd.)
Lecture 9 MOSFET(II) MOSFET I V CHARACTERISTICS(contd.) Outline 1. The saturation region 2. Backgate characteristics Reading Assignment: Howe and Sodini, Chapter 4, Section 4.4 6.012 Spring 2009 Lecture
More informationAO4607, AO4607L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor
Rev : Feb 3 Rev : Jan 4 AO467, AO467L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor General Description The AO467 uses advanced trench technology MOSFETs to provide excellen R DS(ON)
More informationThe Devices. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002
igital Integrated Circuits A esign Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The evices July 30, 2002 Goal of this chapter Present intuitive understanding of device operation Introduction
More informationMOSFET Model with Simple Extraction Procedures, Suitable for Sensitive Analog Simulations
ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY Volume 10, Number 2, 2007, 189 197 MOSFET Model with Simple Extraction Procedures, Suitable for Sensitive Analog Simulations S. EFTIMIE 1, ALEX. RUSU
More informationLecture 20: Semiconductor Structures Kittel Ch 17, p , extra material in the class notes
Lecture 20: Semiconductor Structures Kittel Ch 17, p 494-503, 507-511 + extra material in the class notes MOS Structure Layer Structure metal Oxide insulator Semiconductor Semiconductor Large-gap Semiconductor
More informationAcid Dissociation Constant
CE 131 Lecture 37 Lewis Acids and Bases Chapter 16: pp. 800-802. Acid Dissociation Constant C 2 3 2 + 2 3 + + C 2 3-2 [ 3 + ][C 2 3-2 ] K = [ 2 ][C 2 3 2 ] [ 3 + ][C 2 3-2 ] K a = K [ 2 ] = [C 2 3 2 ]
More informationLecture 18 Field-Effect Transistors 3
Lecture 18 Field-Effect Transistors 3 Schroder: Chapters, 4, 6 1/38 Announcements Homework 4/6: Is online now. Due Today. I will return it next Wednesday (30 th May). Homework 5/6: It will be online later
More informationTPC8116-H TPC8116-H. High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII) High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter
More informationChapter 3. FET Amplifiers. Spring th Semester Mechatronics SZABIST, Karachi. Course Support
Chapter 3 Spring 2012 4 th Semester Mechatronics SZABIST, Karachi 2 Course Support humera.rafique@szabist.edu.pk Office: 100 Campus (404) Official: ZABdesk https://sites.google.com/site/zabistmechatronics/home/spring-2012/ecd
More informationSupporting information
Supporting information Design, Modeling and Fabrication of CVD Grown MoS 2 Circuits with E-Mode FETs for Large-Area Electronics Lili Yu 1*, Dina El-Damak 1*, Ujwal Radhakrishna 1, Xi Ling 1, Ahmad Zubair
More informationProbing the Adhesion Properties of Alginate. Hydrogels: A New Approach towards the Preparation. of Soft Colloidal Probes for Direct Force Measurments
Electronic Supplementary Material (ESI) for Soft Matter. This journal is The Royal Society of Chemistry 2016 Supporting Information Probing the Adhesion Properties of Alginate Hydrogels: A New Approach
More informationSteep-slope WSe 2 Negative Capacitance Field-effect Transistor
Supplementary Information for: Steep-slope WSe 2 Negative Capacitance Field-effect Transistor Mengwei Si, Chunsheng Jiang, Wonil Chung, Yuchen Du, Muhammad A. Alam, and Peide D. Ye School of Electrical
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2610
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) Chopper Regulator, DC DC Converter and Motor Drive Applications Unit: mm Low drain source ON resistance : RDS (ON) = 2.3 Ω (typ.) High
More informationPractice Midterm Exam 200 points total 75 minutes Multiple Choice (3 pts each 30 pts total) Mark your answers in the space to the left:
MITES ame Practice Midterm Exam 200 points total 75 minutes Multiple hoice (3 pts each 30 pts total) Mark your answers in the space to the left: 1. Amphipathic molecules have regions that are: a) polar
More informationP. R. Nelson 1 ECE418 - VLSI. Midterm Exam. Solutions
P. R. Nelson 1 ECE418 - VLSI Midterm Exam Solutions 1. (8 points) Draw the cross-section view for A-A. The cross-section view is as shown below.. ( points) Can you tell which of the metal1 regions is the
More informationPiecewise Nonlinear Approach to the Implementation of Nonlinear Current Transfer Functions
1 Piecewise Nonlinear Approach to the Implementation of Nonlinear Current Transfer Functions Chunyan Wang Abstract A piecewise nonlinear approach to the nonlinear circuit design has been proposed in this
More informationFEATURES SYMBOL QUICK REFERENCE DATA
FEATURES SYMBOL QUICK REFERENCE DATA Trench technology Low on-state resistance Fast switching d g s V DSS = 2 V I D = 7.6 A R DS(ON) 23 mω GENERAL DESCRIPTION N-channel enhancement mode field-effect power
More informationElectrical Degradation of InAlAs/InGaAs Metamorphic High-Electron Mobility Transistors
Electrical Degradation of InAlAs/InGaAs Metamorphic High-Electron Mobility Transistors S. D. Mertens and J.A. del Alamo Massachusetts Institute of Technology Sponsor: Agilent Technologies Outline Introduction
More informationCMPEN 411 VLSI Digital Circuits. Lecture 03: MOS Transistor
CMPEN 411 VLSI Digital Circuits Lecture 03: MOS Transistor Kyusun Choi [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] CMPEN 411 L03 S.1
More informationLong-channel MOSFET IV Corrections
Long-channel MOSFET IV orrections Three MITs of the Day The body ect and its influence on long-channel V th. Long-channel subthreshold conduction and control (subthreshold slope S) Scattering components
More informationIntroduction to Nanotechnology Chapter 5 Carbon Nanostructures Lecture 1
Introduction to Nanotechnology Chapter 5 Carbon Nanostructures Lecture 1 ChiiDong Chen Institute of Physics, Academia Sinica chiidong@phys.sinica.edu.tw 02 27896766 Carbon contains 6 electrons: (1s) 2,
More information-log [H+][OH-] = - log [1 x ] Left hand side ( log H + ) + ( log OH - ) = ph + poh Right hand side = ( log 1) + ( log ) = 14 ph + poh = 14
Autoionization of Water H 2 O H + + OH - K = [H + ][OH - ]/[H 2 O] = 1.802 x 10-16 Concentration of [H 2 O] is so HIGH autoionization is just a drop in the bucket, so [H 2 O] stays constant at 55.5 M,
More informationTitration of a weak acid with strong base
Titration of a weak acid with strong base - Objectives: - To study titration curves. - Determine the pka value of a weak acid. - Reinforce the understanding of buffers. - Titration Curves: - Titration
More informationLecture 04 Review of MOSFET
ECE 541/ME 541 Microelectronic Fabrication Techniques Lecture 04 Review of MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) What is a Transistor? A Switch! An MOS Transistor V GS V T V GS S Ron D
More informationThe Devices. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002
Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The Devices July 30, 2002 Goal of this chapter Present intuitive understanding of device operation Introduction
More informationLow Frequency Noise in MoS 2 Negative Capacitance Field-effect Transistor
Low Frequency Noise in MoS Negative Capacitance Field-effect Transistor Sami Alghamdi, Mengwei Si, Lingming Yang, and Peide D. Ye* School of Electrical and Computer Engineering Purdue University West Lafayette,
More informationMetal-Oxide-Semiconductor Field Effect Transistor (MOSFET)
Metal-Oxide-Semiconductor ield Effect Transistor (MOSET) Source Gate Drain p p n- substrate - SUB MOSET is a symmetrical device in the most general case (for example, in an integrating circuit) In a separate
More informationHigh Performance, Low Operating Voltage n-type Organic Field Effect Transistor Based on Inorganic-Organic Bilayer Dielectric System
Journal of Physics: Conference Series PAPER OPEN ACCESS High Performance, Low Operating Voltage n-type Organic Field Effect Transistor Based on Inorganic-Organic Bilayer Dielectric System To cite this
More information