MC10H125. Quad MECL to TTL Translator
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1 Quad MECL to TTL Translator The MC0H25 is a quad translator for interfacing data and control signals between the MECL section and saturated logic section of digital systems. The 0H part is a functional/pinout duplication of the standard MECL 0K family part, with 00% improvement in propagation delay, and no increase in power-supply current. Outputs of unused translators will go to low state when their inputs are left open. Propagation Delay, 2.5 ns Typical Voltage Compensated Improved Noise Margin 50 mv (Over Operating Voltage and Temperature Range) MECL 0K-Compatible CDIP CSE 620 PDIP-6 P SUFFIX CSE MRKING DIGRMS MC0H25L WLYYWW MC0H25P WLYYWW PLCC-20 FN SUFFIX CSE 775 0H25 WLYYWW = ssembly Location WL = Wafer Lot YY = Year WW = Work Week ORDERING INFORMTION Device Package Shipping MC0H25L CDIP 25 Units/Rail MC0H25P PDIP-6 25 Units/Rail MC0H25FN PLCC Units/Rail Semiconductor Components Industries, LLC, 2003 January, Rev. 0 Publication Order Number: MC0H25/D
2 LOGIC DIGRM V * GND = Pin 6 V CC ( +5.0 Vdc) = Pin 9 V EE ( -5.2 Vdc) = Pin 8 *V to be used to supply bias to the MC0H25 only and bypassed (when used) with 0.0 F to 0. F capacitor to ground (0 V). V can source <.0 m. V in in out out in in V EE DIP PIN SSIGNMENT GND D in D in D out C out C in C in V CC Pin assignment is for Dual-in-Line Package. For PLCC pin assignment, see the Pin Conversion Tables on page 8 of the ON Semiconductor MECL Data ook (DL22/D). DIP CONVERSION TLES 6-Pin DIL to 20-Pin PLCC 6 PIN DIL PIN PLCC Pin DIL to 20-Pin PLCC 20 PIN DIL PIN PLCC
3 MXIMUM RTINGS Symbol Characteristic Rating Unit V EE Power Supply (V CC = 5.0 V) -8.0 to 0 Vdc V CC Power Supply (V EE = -5.2 V) 0 to +7.0 Vdc V I Input Voltage (V CC = 5.0 V) 0 to V EE Vdc T Operating Temperature Range 0 to +75 C T stg Storage Temperature Range - Plastic - Ceramic -55 to to +65 C C ELECTRICL CHRCTERISTICS (V EE = -5.2 V +5%; V CC = 5.0 V %) (Note 2) Symbol Characteristic Min Max Min Max Min Max Unit I E Negative Power Supply Drain Current m I CCH Positive Power Supply m I CCL Drain Current m I inh Input Current I CO Input Leakage Current V OH V OL High Output Voltage Low Output Voltage I OH = -.0 m I OL = +20 m Vdc Vdc V IH High Input Voltage (Note ) Vdc V IL Low Input Voltage (Note ) Vdc I OS Short Circuit Current m V Reference Voltage Vdc V CMR Common Mode Range (Note 3) to +0.3 V Typical V PP Input Sensitivity (Note 4) 50 mv C PRMETERS Symbol Characteristic Min Max Min Max Min Max Unit t pd Propagation Delay ns t r Rise Time (Note 5) ns t f Fall Time (Note 5) ns. When V is used as the reference voltage. 2. Each MECL 0H series circuit has been designed to meet the specifications shown in the test table, after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 linear fpm is maintained. 3. Differential input not to exceed.0 Vdc mv p- p differential input required to obtain full logic swing on output. 5. Output Voltage =.0 V to 2.0 V. R L = 500 to GND and C L = 25 pf to GND. Refer to Figure. 3
4 PPLICTION TTL RECEIVER CHRCTERISTIC TEST *C L includes fixture capacitance C L * R L C TEST LOD GND Figure. TTL Output Loading Used for Device Evaluation PPLICTION INFORMTION The MC0H25 incorporates differential inputs and Schottky TTL totem pole outputs. Differential inputs allow for use as an inverting/non-inverting translator or as a differential line receiver. The V reference voltage is available on Pin for use in single-ended input biasing. The outputs of the MC0H25 go to a low-logic level whenever the inputs are left floating, and a high-logic output level is achieved with a minimum input level of 50 mv p- p. n advantage of this device is that MECL-level information can be received, via balanced twisted pair lines, in the TTL equipment. This isolates the MECL-logic from the noisy TTL environment. Power supply requirements are ground, +5.0 volts and -5.2 volts. 4
5 PCKGE DIMENSIONS PLCC-20 FN SUFFIX PLSTIC PLCC PCKGE CSE ISSUE D (0.80) M T L M S N S -N- Y RK U (0.80) M T L M S N S D -L- -M- Z W 20 D X G 0.00 (0.250) S T L M S N S V VIEW D-D (0.80) M T L M S N S Z R (0.80) M T L M S N S H (0.80) M T L M S N S C E K G J -T- VIEW S G 0.00 (0.250) S T L M S N S (0.00) SETING PLNE K VIEW S F (0.80) M T L M S N S NOTES:. DTUMS L, M, ND N DETERMINED WHERE TOP OF LED SHOULDER EXITS PLSTIC ODY T MOLD PRTING LINE. 2. DIMENSION G, TRUE POSITION TO E MESURED T DTUM T, SETING PLNE. 3. DIMENSIONS R ND U DO NOT INCLUDE MOLD FLSH. LLOWLE MOLD FLSH IS 0.00 (0.250) PER SIDE. 4. DIMENSIONING ND TOLERNCING PER NSI Y4.5M, CONTROLLING DIMENSION: INCH. 6. THE PCKGE TOP MY E SMLLER THN THE PCKGE OTTOM Y UP TO 0.02 (0.300). DIMENSIONS R ND U RE DETERMINED T THE OUTERMOST EXTREMES OF THE PLSTIC ODY EXCLUSIVE OF MOLD FLSH, TIE R URRS, GTE URRS ND INTERLED FLSH, UT INCLUDING NY MISMTCH ETWEEN THE TOP ND OTTOM OF THE PLSTIC ODY. 7. DIMENSION H DOES NOT INCLUDE DMR PROTRUSION OR INTRUSION. THE DMR PROTRUSION(S) SHLL NOT CUSE THE H DIMENSION TO E GRETER THN (0.940). THE DMR INTRUSION(S) SHLL NOT CUSE THE H DIMENSION TO E SMLLER THN (0.635). INCHES MILLIMETERS DIM MIN MX MIN MX C E F G SC.27 SC H J K R U V W X Y Z G K
6 CDIP CSE ISSUE O 6 9 L M NOTES:. DIMENSIONING ND TOLERNCING PER SME Y4.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LED WHEN FORMED PRLLEL. 4. DIMENSION F MY NRROW TO 0.76 (0.030) WHERE THE LED ENTERS THE CERMIC ODY. 5 THIS DRWING REPLCES OSOLETE CSE OUTLINE C E F 8 6X J 0.25 (0.00) M T INCHES MILLIMETERS DIM MIN MX MIN MX C D E SC.27 SC F G 0.00 SC 2.54 SC H K L SC 7.62 SC M N K N G T SETING PLNE 6X 0.25 (0.00) M T D 6
7 6 H 8 G F 9 D 6 PL S C K -- -T (0.00) M T SETING PLNE M PDIP-6 P SUFFIX PLSTIC DIP PCKGE CSE ISSUE R J L M NOTES:. DIMENSIONING ND TOLERNCING PER NSI Y4.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEDS WHEN FORMED PRLLEL. 4. DIMENSION DOES NOT INCLUDE MOLD FLSH. 5. ROUNDED CORNERS OPTIONL. INCHES MILLIMETERS DIM MIN MX MIN MX C D F G 0.00 SC 2.54 SC H SC.27 SC J K L M S STYLE : PIN. CTHODE 2. CTHODE 3. CTHODE 4. CTHODE 5. CTHODE 6. CTHODE 7. CTHODE 8. CTHODE 9. NODE 0. NODE. NODE 2. NODE 3. NODE 4. NODE 5. NODE 6. NODE 7
8 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should uyer purchase or use SCILLC products for any such unintended or unauthorized application, uyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. PULICTION ORDERING INFORMTION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. ox 563, Denver, Colorado 8027 US Phone: or Toll Free US/Canada Fax: or Toll Free US/Canada ONlit@hibbertco.com N. merican Technical Support: Toll Free US/Canada JPN: ON Semiconductor, Japan Customer Focus Center 2-9- Kamimeguro, Meguro-ku, Tokyo, Japan Phone: r4525@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. 8 MC0H25/D
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The SN74LS247 is a BCD-to-Seven-Segment Decoder/Drivers. The LS247 composes the and with the tails. The LS247 has active-low outputs for direct drive of indicators. The LS247 features a lamp test input
NLSV22T244. Dual 2-Bit Dual-Supply Non-Inverting Level Translator
Dual 2-Bit Dual-Supply Non-Inverting Level Translator The NLSV22T244 is a dual 2 bit configurable dual supply bus buffer level translator. The input ports A and the output ports B are designed to track
SN74LS85MEL LOW POWER SCHOTTKY
The SN74LS85 is a 4-Bit Magnitude Camparator which compares two 4-bit words (A, B), each word having four Parallel Inputs (A0 A3, B0 B3); A3, B3 being the most significant inputs. Operation is not restricted
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MMBZ5xxBLT Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed
MC74HC139A. Dual 1 of 4 Decoder/ Demultiplexer. High Performance Silicon Gate CMOS
MC74HC39A Dual of 4 Decoder/ Demultiplexer High Performance Silicon Gate CMOS The MC74HC39A is identical in pinout to the LS39. The device inputs are compatible with standard CMOS outputs; with pull up
MC74AC259, MC74ACT Bit Addressable Latch
8 Bit Addressable Latch The MC74AC259/74ACT259 is a high speed 8 bit addressable latch designed for general purpose storage applicatio in digital systems. It is a multifunctional device capable of storing
MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B
MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary
NGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V
NGTB4N6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering
MARKING DIAGRAMS ORDERING INFORMATION VHC139 AWLYYWW SOIC 16 D SUFFIX CASE 751B VHC 139 AWLYWW TSSOP 16 DT SUFFIX CASE 948F
The MC74HC139 is an advanced high speed CMOS 2 to 4 decoder/ demultiplexer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while
MC100LVE VНECL 16:1 Multiplexer
3.3VНECL 16:1 Multiplexer The is a 16:1 multiplexer with a differential output. The select inputs (SEL0, 1, 2, 3 ) control which one of the sixteen data inputs (A0 A15) is propragated to the output. The
NTD30N02T4G. Power MOSFET 30 Amps, 24 Volts. N Channel DPAK. 30 AMPERES 24 VOLTS R DS(on) = 11.2 m (Typ.)
NTDN Power MOSFET Amps, Volts NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features PbFree Packages are
BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE
BAS9LTG, BAS20LTG, BAS2LTG, BAS2DWTG High Voltage Switching Diode Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Continuous Reverse Voltage Rating Symbol
MC14070B, MC14077B CMOS SSI. Quad Exclusive OR and NOR Gates
C070B, C077B COS SSI Quad Exclusive OR and NOR Gates The C070B quad exclusive OR gate and the C077B quad exclusive NOR gate are constructed with OS Pchannel and Nchannel enhancement mode devices in a single
MC74VHC14. Hex Schmitt Inverter
MC74HC4 Hex Schmitt Inverter The MC74HC4 is an advanced high speed CMOS Schmitt inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky
NGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
NGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209. Silicon Tuning Diodes pf, 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES
MMBVLT Series, MV5, MV, MV9, LV9 Preferred evice Silicon Tuning iodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general
MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L. JFET - VHF/UHF Amplifier Transistor. N Channel
MMBFJ9L, MMBFJL, SMMBFJ9L, SMMBFJL JFET - VHF/UHF Amplifier Transistor NChannel Features Drain and Source are Interchangeable S Prefix for Automotive and Other Applications Requiring Unique Site and Control
NGTG25N120FL2WG. IGBT - Field Stop II. 25 A, 1200 V V CEsat = 2.0 V E off = 0.60 mj
NGTGNFLWG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching
NGTB40N120FL2WG. IGBT - Field Stop II. 40 A, 1200 V V CEsat = 2.0 V E off = 1.10 mj
NGTBNFLWG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching
MMBF4391LT1, MMBF4392LT1, MMBF4393LT1. JFET Switching Transistors. N Channel. Pb Free Packages are Available.
LT1, LT1, LT1 JFET Switching Transistors NChannel Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DS Vdc DrainGate Voltage V DG Vdc GateSource Voltage
74HC244 Octal 3 State Noninverting Buffer/Line Driver/ Line Receiver
Octal 3 State Noninverting Buffer/Line Driver/ Line Receiver High Performance Silicon Gate CMOS The is identical in pinout to the LS244. The device inputs are compatible with standard CMOS outputs; with
NB3N2304NZ. 3.3V 1:4 Clock Fanout Buffer
3.3V 1:4 lock Fanout Buffer Description The NB3N2304NZ is a low skew 1 to 4 clock fanout buffer, designed for high speed clock distribution such as in PI X applications. The NB3N2304NZ guarantees low output
SEMICONDUCTOR TECHNICAL DATA
EIONDUTOR TEHNIL DT The 10102 is a quad 2 input NOR gate. The 10102 provides one gate with OR/NOR outputs. PD = 25 mw typ/gate (No Load) tpd = ns typ tr, tf = ns typ (20% 0%) L UIX ERI PE E 620 10 LOI
NTD14N03R, NVD14N03R. Power MOSFET 14 Amps, 25 Volts. N Channel DPAK. 14 AMPERES, 25 VOLTS R DS(on) = 70.4 m (Typ)
NTDNR, NVDNR Power MOSFET mps, 5 Volts NChannel DPK Features Planar HDe Process for Fast Switching Performance Low R DS(on) to Minimize Conduction Loss Low C iss to Minimize Driver Loss Low Gate Charge
MC14504B. Hex Level Shifter for TTL to CMOS or CMOS to CMOS
CB Hex Level Shifter for TTL to COS or COS to COS The CB is a hex noninverting level shifter using COS technology. The level shifter will shift a TTL signal to COS logic levels for any COS supply voltage
74HCT245. Octal 3-State Noninverting Bus Transceiver with LSTTL-Compatible Inputs. High-Performance Silicon-Gate CMOS
Octal 3-State Noninverting Bus Transceiver with LSTTL-Compatible Inputs High-Performance Silicon-Gate CMOS The 74HCT245 is identical in pinout to LS245. The device has TTL-Compatible Inputs. The HCT245
2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS
N413, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit N413 N413 V CEO 5 V CBO 4 EmitterBase
2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS
2N4923 is a Preferred Device MediumPower Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation
NB3L553/D. 2.5 V / 3.3 V / 5.0 V 1:4 Clock Fanout Buffer
2.5 V / 3.3 V / 5.0 V :4 Clock Fanout Buffer Description The is a low skew to 4 clock fanout buffer, designed for clock distribution in mind. The specifically guarantees low output to output skew. Optimal
MC14532B. MARKING DIAGRAMS. MAXIMUM RATINGS (Voltages Referenced to V SS ) (Note 2.) ORDERING INFORMATION PDIP 16 P SUFFIX CASE 648
The MC4532B is constructed with complementary MOS (CMOS) enhancement mode devices. The primary function of a priority encoder is to provide a binary address for the active input with the highest priority.