RRAM technology: From material physics to devices. Fabien ALIBART IEMN-CNRS, Lille
|
|
- Duane Lane
- 6 years ago
- Views:
Transcription
1 RRAM technology: From material physics to devices Fabien ALIBART IEMN-CNRS, Lille
2 Outline Introduction: RRAM technology and applications Few examples: Ferroelectric tunnel junction memory Mott Insulator memory Electro Chemical Memory (CB-RAM) OxRAM Valence Change Memory Thermo Chemical Memory Conclusion: main challenges
3 Principle of RRAM V read V write R on = logical 1 R off = logical 0 The time voltage dilemma RRAM: big picture Induce a change of resistivity to discriminate two (or more) resistance states by electrical stress (1 bit of information, or more) Evaluate this state by a Read voltage, i.e. probing current Equivalent to a tunable resistor Non volatile In other words: we want the write voltage V write to be fast and to induce a large change of resistance and we want to be able to read for a very long time at V read w/o changing the state: not trivial. Whatever is the physical mechanism originating the change of resistance, we need NON LINEARITY Ex: the worst non-volatile memory Storing charge on a capacitor Q i v T store /T write ~1 R V Write Read Write Read t V t A V Metal electrode Switching material T store /T write >10^6 to become a Non- Volatile memory
4 Some semantic There is today a debat around the proposition of memristance by HP in If we follow precisely the definition of memristor, none of the RRAM belongs to this class, but if we extend memrsitor to memristive devices, all RRAM can fit into this class More or less the same, but not exactly similar Classification under construction
5 The Holy grale: a universal memory For RRAM to become a success story, it needs to bring more to industry, not only equivalent performances Fast (sub 10ns) Need refresh and/or power ON slow need large voltages Scaling issue 4-terminal High retention time Try to do both with the same device: Fast (<10ns) Low switching energy (pj) Non-volatile (10 year@85c) Reliable High endurance (up to cycles And more Sub 10 nm integration New computing solution Multi-bit
6 Current ( ua ) Wide range of material systems (many CMOS compatible) and physical phenomena High density due to lateral scaling and.. HPLab, 2005 monolithical 3D integration RRAM potential PROS and CONS but simple functionality nm hp 0 + Pt -100 TiO V <50 ns TiO x 2Pt Voltage ( V ) J. Yang et al. Nature Nano, (2008) Solution: hybrid circuits M.-J.Lee et al. IEDM 85 (2008) Kawahara et al. Samsung, crossbar add-on with integrated memristive devices CMOS circuits
7 CMOS decoder MEMORIES AND STORAGE 1transistor/1resistor(1T1R) memory cell memristor (CMOS) transistor selected bit line CMOS sense/drive circuits READ OPERATION leakage current selected word line Killer Applications crossbar add-on with integrated memristive devices conventional complimentary metal oxide semiconductor (CMOS) circuits HYBRID CIRCUITS bottom (nano)wire level top (nano)wire level similar twoterminal memristive devices at each crosspoint - OFF state V WRITE i V TH -V TH V READ ON state v VWRITE V READ crossbar wires (only few are shown for clarity) B FPGA A B A+B floated 0 0T1R memory cell LOGIC (HPLab, Nature) A A B vias connecting CMOS cell CMOS and crossbar wires A CMOS cell BIO-INSPIRED AND MIXED-SIGNAL INFORMATION PROCESSING synapses CMOS neuron R A+ B B diode-like memristors R w i x i A B synapses CMOS inverter A+ B diode-resistor logic crossbar nanowire x 1 x 2 y synapses neuron w 1 w 2 x 1 x 2 CMOS neurons
8 State-of-the-Art Performance Govoreanu,et all IEDM, ) yield and repeatability 10) density 2) endurance storage 9) number of states logic 8) nonlinear I-V bio Endruance (cycles) memory 3) reciprocal switching energy 4) switching speed demonstrated 1E13 1E11 1E9 1E7 100,000 1,000 SAIT HP Labs Panasonic Corp. Fujitsu Labs several groups Year ON OFF (A) Kawahara et al. Samsung, E-4 1E-5 Decrease Weight Increase Weight Stand-by (Read only) 120 A 60 A 30 A 7 A Pulse Number 15 A Alibart et al, Nanotechnology, 23, , ) ON state resistance 5) retention 6) on/off current ratio J. Yang and D. Strukov (Nature Nano 2013) Schindler, PhD Thesis, 2009 Strachan et al, Nanotechnology, 22, Torrezan et al, Nanotechnology, 22,
9 1) yield and repeatability 10) density 2) endurance 9) number of states storage memory 3) reciprocal switching energy logic 8) nonlinear I-V bio demonstrated 4) switching speed 7) ON state resistance 6) on/off current ratio 5) retention
10 See J. Grollier talk RRAM technologies Mott transition See J. Tranchant (IMN) talk Chen-NatNano2012 Anderson localisation tunning in SiO2_Pt/NPs films This review Thermally-induced phase change
11 Work from UMPhys-Thales (Paris) FeRAM Change of resistivity is associated to the change of polarization of a ferroelectric thin film PFM analysis of domains reversal via electric field stress Polarization -> change of band alignment -> change of resitivity
12 FeRAM Non-linearity: Exp(Ea/kT) >< Exp(qV/kT) Ea Next big challenge: Integration with CMOS friendly materials
13 Work from IMN, Nantes Mott Memory Clustered lacunar spinel structure : V V SG F-43m V V th R low level t t t t delay no transition volatile Resistive switching fast non-volatile Resistive switching
14 Modeling of the volatile resistive switching Model Electric Field conductor insulator Electric Field induced Breakdown of the Mott state Metastable ON state -> OFF state more stable (volatile transition) BUT domain size effect that induces a nonvolatile transition P. Stoliar et al., Adv. Mater. 25, 3222 (2013) Time (cycle #) 14 V. Guiot et al. Nature Comm; 4, 1722 (2013)
15 Electrical performances of GaV 4 S 8 for Mott memories Resistive switch cycling endurance 2V / 1ms pulses on 50x50µm² MIM structures Writing / erasing times 100 ns, error rate < 0,1 8V / 100ns pulses on 20x3 µm² planar structures GaV 4 S 8 + writing / erasing voltage 2V J. Tranchant et al. Thin Solid Films, 533 (2013) 61 Data retention : high and low resistance states > 10 years 20 µm Increase of R on /R off with downscaling (extrapolation on 2x2 µm² MIM structures)
16 Electrochemical Cell Other names: Solid state electrolyte memory Conductive bridge memory Programmable metallization cell Active Electrode (e.g., Ag, Cu) Solid state electrolyte with host ions M Z+ ions (e.g. Ag 2 S, Cu 2 S, RbAg 4 I 5 ) or insulator doped with M Z+ (e.g. SiO 2, WO 2, GeS, GeSe) Counter Electrode (e.g., Pt, Ir, Au, W) typically amorphous or crystalline
17 Electrochemical Cell
18 Typical I-V and Process Cartoon (A) OFF state (B, C) SET process: (i) Ag oxidized to Ag + ; (ii) drift in electric field ; (iii) reduced and electro-crystallized (D) SET process: complete bridging (compliancerelated) (E) RESET process: opposite of SET (heat assisted?) Ag-Ge-Se
19 (a) (b) (c) Anodic oxidation and dissolution of M: M M z+ +ze - Migration of M z+ across thin film (migrations is strongly enhanced by extended defects) Reduction and electrocrystallization of M on the surface of CE: M z+ +ze - M Formation of filament growing (typically) in the direction of the active electrode. A forming step (first sweep) is required The growth is limited by current compliance SET Process Origin of Non-linearity Butler-Volmer equation for oxidation reductions Exponential for high overpotentials Δφ~applied potential α: cathodic charge transfer coef.
20 Ox(ide)RAM (redox based) OxRAM is typically a transition metal oxide sandwiched between inert electrodes (no metal cations available as in ECM). If a sufficient voltage (or current) stress is applied, the insulating material can become conductive Two distinct I-V switching phenomena are reported Unipolar: The same polarity can tune ON and OFF the cell Bipolar: One polarity switch ON, the other switch OFF A V Metal 1 M y O x Metal 2 Thermo Chemical Memory UNIPOLAR Valence Change Memory BIPOLAR What is happening?
21 Valence Change Memory (redox-based) In TMO, oxygen vacancies (V O 2+ )are much more mobile than cations. This has been evidenced by coloration measurement in slightly doped oxide cristal Metal 1 M y O x The doping vision (in cristal): By changing the V 2+ O distribution, two doping region can be formed, n and p respectively. For highly doped TMO, the n-type can become highly conductive Metal 2 Slightly Fe doped STO Red: Fe 4+, p-type region White: Fe <4+, n-type region (Vo rich)
22 Valence Change Memory (redox-based) In the case of thin films, the TMO are most of the time amorphous. But still, the V O 2+ are expected to be the mobile species (no direct evidence of V O 2+ migration in amorphous TMO) The stochiometry vision : Metal 1 M y O x Metal 2
23
24 Electroforming (cristal) During electroforming, conducting filament are created into the oxide.
25 Electroforming (thin film) Example of forming Observation of Magneli phases in TiO2 Exp. setup X ray-diffraction TEM image - Forming is thermally assisted and two step process (reduction and migration)
26 Bipolar switching Pt/ZrO x /Zr Green = O Purple = Zr in lower valence state Oxygen mobile, Zr is immobile
27 Mechanism for switching Practically, even if one mechanism is more important, switching results from a combination
28 Non linearity Vacancies mobility increase exponentially with temperature Other factor: Maybe the stability of the two phases (i.e. stochiometric vs high V O 2+ concentration) barrier modulation due to: 2 electric field 1 heating 1 ~ k B T 2 ~Eaq/2 U A ion hopping initial profile 3 U A hop distance a energy 3 phase transition or redox reaction position
29 RRAM Challenges Main challenge: deal with dispersion Because forming is stochastic, dispersion in switching properties are huge Solution: towards forming free devices 25 nm Au / 15 nm Pt top electrode 30 nm TiO 2-x e-beam patterned Pt protrusion 5 nm Ti / 25 nm Pt bottom electrode 20 nm AE = active electrode (low oxygen affinity, high work function, e.g Pt, Ir, TiN) OE = Ohmic electrode (opposite, e.g Ti, Ta) (a) (b) (c) Homogeneous monolayer, e.g. TiO2-x forming is crucial Homogeneous bi-layer, e.g. TiO2/TiO2-x or Ta2O5/TaOx Hetergeneous bi-layer, e.g. Al2O3/TiO2-x or HfO2/TiO2-x
30 RRAM Challenges Main challenge: energy consumption Lowest E/Bit reported is few pj. Ideally, we want to go to the sub pj regime Solution: filament engineering Trade off between filament resistance and ON/OFF ratio. (Need to increase the resistance of the filament) High conductivity (metallic filament) Moderate conductivity (Semi-metallic) Scaling of the filament Control of defects in the filament (i.e. control of conductivity)
31 Main challenge: high density crossbar implementation RRAM challenges Additionnal challenges: Nanowire resistance contribution and high current effect on wire during operation Solutions: Complementary switching Selector device: Tunnel junction S type Diode 4 Intrinsic non-linear I-V 10 Current (ma) Current (ma) Voltage (V) Voltage (V)
32 Thanks for your attention
Novel Devices and Circuits for Computing
Novel Devices and Circuits for Computing UCSB 594BB Winter 2013 Lecture 3: ECM cell Class Outline ECM General features Forming and SET process RESET Variants and scaling prospects Equivalent model Electrochemical
More informationNovel Devices and Circuits for Computing
Novel Devices and Circuits for Computing UCSB 594BB Winter 213 Lectures 5 and 6: VCM cell Class Outline VCM = Valence Change Memory General features Forming SET and RESET Heating Switching models Scaling
More information1. HP's memristor and applications 2. Models of resistance switching. 4. 3D circuit architectures 5. Proposal for evaluation framework
OUTL LINE 1. HP's memristor and applications 2. Models of resistance switching 3. Volatility speed tradeo ffs 4. 3D circuit architectures 5. Proposal for evaluation framework HP S MEMRISTOR memristor =
More informationApplications of Memristors in ANNs
Applications of Memristors in ANNs Outline Brief intro to ANNs Firing rate networks Single layer perceptron experiment Other (simulation) examples Spiking networks and STDP ANNs ANN is bio inpsired inpsired
More information1 Ionic Memory Technology
j1 1 Ionic Memory Technology An Chen Ionic memory devices based on ion migration and electrochemical reactions have shown promising characteristics for next-generation memory technology. Both cations (e.g.,
More informationAN ABSTRACT OF THE THESIS OF
AN ABSTRACT OF THE THESIS OF Santosh Murali for the degree of Master of Science in Electrical and Computer Engineering presented on December 20, 2011. Title: Investigation of Bipolar Resistive Switching
More informationElectrical and Reliability Characteristics of RRAM for Cross-point Memory Applications. Hyunsang Hwang
Electrical and Reliability Characteristics of RRAM for Cross-point Memory Applications Hyunsang Hwang Dept. of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST), KOREA
More informationResistive Memories Based on Amorphous Films
Resistive Memories Based on Amorphous Films Wei Lu University of Michigan Electrical Engineering and Computer Science Crossbar Inc 1 Introduction Hysteretic resistive switches and crossbar structures Simple
More informationNeuromorphic computing with Memristive devices. NCM group
Neuromorphic computing with Memristive devices NCM group Why neuromorphic? New needs for computing Recognition, Mining, Synthesis (Intel) Increase of Fault (nanoscale engineering) SEMICONDUCTOR TECHNOLOGY
More informationAdvanced Flash and Nano-Floating Gate Memories
Advanced Flash and Nano-Floating Gate Memories Mater. Res. Soc. Symp. Proc. Vol. 1337 2011 Materials Research Society DOI: 10.1557/opl.2011.1028 Scaling Challenges for NAND and Replacement Memory Technology
More informationSymetrix Corporation Background
Symetrix Corporation Background Symetrix has strong history as IP provider > 25 years of development >200 U.S. and foreign patents. > $70M in research revenues, royalties and other income from development.
More informationInfluence of electrode materials on CeO x based resistive switching
Influence of electrode materials on CeO x based resistive switching S. Kano a, C. Dou a, M. Hadi a, K. Kakushima b, P. Ahmet a, A. Nishiyama b, N. Sugii b, K. Tsutsui b, Y. Kataoka b, K. Natori a, E. Miranda
More informationResistive Random Access Memories (RRAMs)
Resistive Random Access Memories (RRAMs) J. Joshua Yang HP Labs, Palo Alto, CA, USA (currently) ECE Dept., Umass Amherst (Jan/2015 - ) 1 Copyright 2010 Hewlett-Packard Development Company, L.P. Resistive
More informationSize-dependent Metal-insulator Transition Random Materials Crystalline & Amorphous Purely Electronic Switching
Nanometallic RRAM I-Wei Chen Department of Materials Science and Engineering University of Pennsylvania Philadelphia, PA 19104 Nature Nano, 6, 237 (2011) Adv Mater,, 23, 3847 (2011) Adv Func Mater,, 22,
More informationCation-based resistive memory
Cation-based resistive memory Emerging Non-Volatile Memory Technologies Symposium San Francisco Bay Area Nanotechnology Council April 6, 2012 Michael N. Kozicki Professor of Electrical Engineering School
More informationMechanism of Switching and Related Challenges in Transition Metal Oxide Based RRAM Devices
Mechanism of Switching and Related Challenges in Transition Metal Oxide Based RRAM Devices Rashmi Jha and Branden Long Dept. of Electrical Engineering and Computer Science University of Toledo Toledo,
More informationMoores Law for DRAM. 2x increase in capacity every 18 months 2006: 4GB
MEMORY Moores Law for DRAM 2x increase in capacity every 18 months 2006: 4GB Corollary to Moores Law Cost / chip ~ constant (packaging) Cost / bit = 2X reduction / 18 months Current (2008) ~ 1 micro-cent
More informationDigital Electronics Part II - Circuits
Digital Electronics Part - Circuits Dr.. J. Wassell Gates from Transistors ntroduction Logic circuits are non-linear, consequently we will introduce a graphical technique for analysing such circuits The
More informationExperimental and Theoretical Study of Electrode Effects in HfO2 based RRAM
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM C. Cagli 1, J. Buckley 1, V. Jousseaume 1, T. Cabout 1, A. Salaun 1, H. Grampeix 1, J. F. Nodin 1,H. Feldis 1, A. Persico 1, J.
More informationFinding the Missing Memristor
February 11, 29 Finding the Missing Memristor 3 nm Stan Williams HP 26 Hewlett-Packard Development Company, L.P. The information contained herein is subject to change without notice Acknowledgments People
More informationSupplementary Information for. Non-volatile memory based on ferroelectric photovoltaic effect
Supplementary Information for Non-volatile memory based on ferroelectric photovoltaic effect Rui Guo 1, Lu You 1, Yang Zhou 1, Zhi Shiuh Lim 1, Xi Zou 1, Lang Chen 1, R. Ramesh 2, Junling Wang 1* 1 School
More informationMost matter is electrically neutral; its atoms and molecules have the same number of electrons as protons.
Magnetism Electricity Magnetism Magnetic fields are produced by the intrinsic magnetic moments of elementary particles associated with a fundamental quantum property, their spin. -> permanent magnets Magnetic
More informationExperimental and theoretical understanding of Forming, SET and RESET operations in Conductive Bridge RAM (CBRAM) for memory stack optimization
Experimental and theoretical understanding of Forming, SET and RESET operations in Conductive Bridge RAM (CBRAM) for memory stack optimization J. Guy, G. Molas, P. Blaise, C. Carabasse, M. Bernard, A.
More informationThe switching location of a bipolar memristor: chemical, thermal and structural mapping
IOP PUBLISHING Nanotechnology 22 (2011) 254015 (6pp) The switching location of a bipolar memristor: chemical, thermal and structural mapping NANOTECHNOLOGY doi:10.1088/0957-4484/22/25/254015 John Paul
More informationMemory and computing beyond CMOS
Memory and computing beyond CMOS Dipartimento di Elettronica, Informazione e Bioingegneria Politecnico di Milano daniele.ielmini@polimi.it Outline 2 Introduction What is CMOS? What comes after CMOS? Example:
More informationNovel Devices and Circuits for Computing
Novel Devices and Circuits for Computing UCSB 594BB Winter 2013 Lecture 4: Resistive switching: Logic Class Outline Material Implication logic Stochastic computing Reconfigurable logic Material Implication
More informationElectronics The basics of semiconductor physics
Electronics The basics of semiconductor physics Prof. Márta Rencz, Gergely Nagy BME DED September 16, 2013 The basic properties of semiconductors Semiconductors conductance is between that of conductors
More informationCMOS compatible integrated ferroelectric tunnel junctions (FTJ)
CMOS compatible integrated ferroelectric tunnel junctions (FTJ) Mohammad Abuwasib 1*, Hyungwoo Lee 2, Chang-Beom Eom 2, Alexei Gruverman 3, Jonathan Bird 1 and Uttam Singisetti 1 1 Electrical Engineering,
More informationThe challenges of configurable hybrid Memristor-CMOS Integrated circuits fabrication: Physics and Materials Science
The challenges of configurable hybrid Memristor-CMOS Integrated circuits fabrication: Physics and Materials Science Gilberto Medeiros-Ribeiro HP Labs Outline Context Memristor basics Memristor fabrication
More informationOXIDE BASED NON-VOLATILE RESISTANCE RANDOM ACCESS MEMORY
OXIDE BASED NON-VOLATILE RESISTANCE RANDOM ACCESS MEMORY Zheng Ke School of Electrical & Electronic Engineering A thesis submitted to the Nanyang Technological University in fulfilment of the requirement
More informationLecture 6 NEW TYPES OF MEMORY
Lecture 6 NEW TYPES OF MEMORY Memory Logic needs memory to function (efficiently) Current memories Volatile memory SRAM DRAM Non-volatile memory (Flash) Emerging memories Phase-change memory STT-MRAM (Ferroelectric
More informationSemiconductor Physics Problems 2015
Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and M-K Lee 1. The purest semiconductor crystals it is possible
More informationStatic Behavior of Chalcogenide Based Programmable Metallization Cells. Saba Rajabi
Static Behavior of Chalcogenide Based Programmable Metallization Cells by Saba Rajabi A Thesis Presented in Partial Fulfillment of the Requirements for the Degree Master of Science Approved July 2014 by
More informationPerpendicular MTJ stack development for STT MRAM on Endura PVD platform
Perpendicular MTJ stack development for STT MRAM on Endura PVD platform Mahendra Pakala, Silicon Systems Group, AMAT Dec 16 th, 2014 AVS 2014 *All data in presentation is internal Applied generated data
More informationThe N3XT Technology for. Brain-Inspired Computing
The N3XT Technology for Brain-Inspired Computing SystemX Alliance 27..8 Department of Electrical Engineering 25.4.5 2 25.4.5 Source: Google 3 25.4.5 Source: vrworld.com 4 25.4.5 Source: BDC Stanford Magazine
More informationA Universal Memory Model for Design Exploration. Ketul Sutaria, Chi-Chao Wang, Yu (Kevin) Cao School of ECEE, ASU
A Universal Memory Model for Design Exploration Ketul Sutaria, Chi-Chao Wang, Yu (Kevin) Cao School of ECEE, ASU Universal Memory Modeling because there is no universal memory device! Modeling needs in
More informationSupporting Information
Copyright WILEY-VCH Verlag GmbH & Co. KGaA, 69469 Weinheim, Germany, 2017. Supporting Information for Adv. Mater., DOI: 10.1002/adma.201602976 Direct Observations of Nanofilament Evolution in Switching
More informationBipolar resistive switching in metal-insulator-semiconductor nanostructures based on silicon nitride and silicon oxide
Journal of Physics: Conference Series PAPER OPEN ACCESS Bipolar resistive switching in metal-insulator-semiconductor nanostructures based on silicon nitride and silicon oxide To cite this article: M N
More informationMolecular Electronics For Fun and Profit(?)
Molecular Electronics For Fun and Profit(?) Prof. Geoffrey Hutchison Department of Chemistry University of Pittsburgh geoffh@pitt.edu July 22, 2009 http://hutchison.chem.pitt.edu Moore s Law: Transistor
More informationDigital Electronics Part II Electronics, Devices and Circuits
Digital Electronics Part Electronics, Devices and Circuits Dr.. J. Wassell ntroduction n the coming lectures we will consider how logic gates can be built using electronic circuits First, basic concepts
More informationFrom Spin Torque Random Access Memory to Spintronic Memristor. Xiaobin Wang Seagate Technology
From Spin Torque Random Access Memory to Spintronic Memristor Xiaobin Wang Seagate Technology Contents Spin Torque Random Access Memory: dynamics characterization, device scale down challenges and opportunities
More informationDigital Integrated Circuits A Design Perspective
Semiconductor Memories Adapted from Chapter 12 of Digital Integrated Circuits A Design Perspective Jan M. Rabaey et al. Copyright 2003 Prentice Hall/Pearson Outline Memory Classification Memory Architectures
More informationDuring such a time interval, the MOS is said to be in "deep depletion" and the only charge present in the semiconductor is the depletion charge.
Q1 (a) If we apply a positive (negative) voltage step to a p-type (n-type) MOS capacitor, which is sufficient to generate an inversion layer at equilibrium, there is a time interval, after the step, when
More informationEE650R: Reliability Physics of Nanoelectronic Devices Lecture 18: A Broad Introduction to Dielectric Breakdown Date:
EE650R: Reliability Physics of Nanoelectronic Devices Lecture 18: A Broad Introduction to Dielectric Breakdown Date: Nov 1, 2006 ClassNotes: Jing Li Review: Sayeef Salahuddin 18.1 Review As discussed before,
More informationSupporting Information
Supporting Information Monolithically Integrated Flexible Black Phosphorus Complementary Inverter Circuits Yuanda Liu, and Kah-Wee Ang* Department of Electrical and Computer Engineering National University
More informationCurrent mechanisms Exam January 27, 2012
Current mechanisms Exam January 27, 2012 There are four mechanisms that typically cause currents to flow: thermionic emission, diffusion, drift, and tunneling. Explain briefly which kind of current mechanisms
More informationTransistors - a primer
ransistors - a primer What is a transistor? Solid-state triode - three-terminal device, with voltage (or current) at third terminal used to control current between other two terminals. wo types: bipolar
More informationElectronics with 2D Crystals: Scaling extender, or harbinger of new functions?
Electronics with 2D Crystals: Scaling extender, or harbinger of new functions? 1 st Workshop on Data Abundant Systems Technology Stanford, April 2014 Debdeep Jena (djena@nd.edu) Electrical Engineering,
More informationElectrical Conduction in Ceramic Materials 1 Ref: Barsoum, Fundamentals of Ceramics, Ch7, McGraw-Hill, 2000
MME 467 Ceramics for Advanced Applications Lecture 19 Electrical Conduction in Ceramic Materials 1 Ref: Barsoum, Fundamentals of Ceramics, Ch7, McGraw-Hill, 2000 Prof. A. K. M. B. Rashid Department of
More informationSupplementary Figure 1. Visible (λ = 633 nm) Raman spectra of a-co x layers. (a) Raman spectra of
a In te n s ity [a.u.] c In te n s ity [a.u.] 6 4 2 4 3 2 1 3 2.5 2 1.5 1 p O 2 3.5 1,5 3, 4,5 R a m a n s h ift [c m -1 ] p ris tin e 1 o C 2 o C 3 o C 4 o C 5 o C b d In te n s ity [a.u.] In te n s ity
More informationpss Correlation between diode polarization and resistive switching polarity in Pt/TiO 2 /Pt memristive device
Phys. Status Solidi RRL, 1 5 (2016) / DOI 10.1002/pssr.201600044 pss Correlation between diode polarization and resistive switching polarity in Pt/TiO 2 Ligang Gao *, 1, Brian Hoskins 1, 2, and Dmitri
More informationSupplementary Figure 1 Phase detection EFM measurements verifying the nature of the
Supplementary Figure 1 Phase detection EFM measurements verifying the nature of the accumulated charges. (a) Topographic profile and (b) EFM phase image of the region after being stimulated by a positive
More informationLecture 9: Metal-semiconductor junctions
Lecture 9: Metal-semiconductor junctions Contents 1 Introduction 1 2 Metal-metal junction 1 2.1 Thermocouples.......................... 2 3 Schottky junctions 4 3.1 Forward bias............................
More informationLOGIC CIRCUITS. Basic Experiment and Design of Electronics. Ho Kyung Kim, Ph.D.
Basic Experiment and Design of Electronics LOGIC CIRCUITS Ho Kyung Kim, Ph.D. hokyung@pusan.ac.kr School of Mechanical Engineering Pusan National University Digital IC packages TTL (transistor-transistor
More informationChapter 6 ELECTRICAL CONDUCTIVITY ANALYSIS
Chapter 6 ELECTRICAL CONDUCTIVITY ANALYSIS CHAPTER-6 6.1 Introduction The suitability and potentiality of a material for device applications can be determined from the frequency and temperature response
More informationSupplementary Materials for
Supplementary Materials for Extremely Low Operating Current Resistive Memory Based on Exfoliated 2D Perovskite Single Crystals for Neuromorphic Computing He Tian,, Lianfeng Zhao,, Xuefeng Wang, Yao-Wen
More informationElectrical Characterization with SPM Application Modules
Electrical Characterization with SPM Application Modules Metrology, Characterization, Failure Analysis: Data Storage Magnetoresistive (MR) read-write heads Semiconductor Transistors Interconnect Ferroelectric
More informationAddressing Challenges in Neuromorphic Computing with Memristive Synapses
Addressing Challenges in Neuromorphic Computing with Memristive Synapses Vishal Saxena 1, Xinyu Wu 1 and Maria Mitkova 2 1 Analog Mixed-Signal and Photonic IC (AMPIC) Lab 2 Nanoionic Materials and Devices
More informationNew Approaches to Reducing Energy Consumption of MRAM write cycles, Ultra-high efficient writing (Voltage-Control) Spintronics Memory (VoCSM)
New Approaches to Reducing Energy Consumption of MRAM write cycles, Ultra-high efficient writing (Voltage-Control) Spintronics Memory (VoCSM) Hiroaki Yoda Corporate Research & Development Center, Toshiba
More informationA Hybrid CMOS/Memristive Nanoelectronic Circuit for Programming Synaptic Weights
A Hybrid CMOS/Memristive Nanoelectronic Circuit for Programming Synaptic Weights Arne Heittmann and Tobias G. Noll Chair of Electrical Engineering and Computer Systems RWTH Aachen University -52062 Aachen,
More informationNRAM: High Performance, Highly Reliable Emerging Memory
NRAM: High Performance, Highly Reliable Emerging Memory Sheyang Ning,2, Tomoko Ogura Iwasaki, Darlene Viviani 2, Henry Huang 2, Monte Manning 2, Thomas Rueckes 2, Ken Takeuchi Chuo University 2 Nantero
More informationLecture 25. Semiconductor Memories. Issues in Memory
Lecture 25 Semiconductor Memories Issues in Memory Memory Classification Memory Architectures TheMemoryCore Periphery 1 Semiconductor Memory Classification RWM NVRWM ROM Random Access Non-Random Access
More informationAn Overview of Spin-based Integrated Circuits
ASP-DAC 2014 An Overview of Spin-based Integrated Circuits Wang Kang, Weisheng Zhao, Zhaohao Wang, Jacques-Olivier Klein, Yue Zhang, Djaafar Chabi, Youguang Zhang, Dafiné Ravelosona, and Claude Chappert
More informationSupplementary Figures
Supplementary Figures Supplementary Figure S1 - Steady state emfs for the OFF state and the RESET transition from ON to OFF state corresponding to a dissolution of the filament The dissolution is induced
More informationAccess from the University of Nottingham repository:
ElHassan, Nemat Hassan Ahmed (2017) Development of phase change memory cell electrical circuit model for non-volatile multistate memory device. PhD thesis, University of Nottingham. Access from the University
More informationScaling behaviors of RESET voltages and currents in unipolar
Scaling behaviors of RESET voltages and currents in unipolar resistance switching S. B. Lee, 1 S. C. Chae, 1 S. H. Chang, 1 J. S. Lee, 2 S. Seo, 3 B. Kahng, 2 and T. W. Noh 1,a) 1 ReCOE & FPRD, Department
More informatione - Galvanic Cell 1. Voltage Sources 1.1 Polymer Electrolyte Membrane (PEM) Fuel Cell
Galvanic cells convert different forms of energy (chemical fuel, sunlight, mechanical pressure, etc.) into electrical energy and heat. In this lecture, we are interested in some examples of galvanic cells.
More informationTECHNOLOGY ROADMAP EMERGING RESEARCH DEVICES 2013 EDITION FOR
INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS 01 EDITION EMERGING RESEARCH DEVICES THE ITRS IS DEVISED AND INTENDED FOR TECHNOLOGY ASSESSMENT ONLY AND IS WITHOUT REGARD TO ANY COMMERCIAL CONSIDERATIONS
More informationElectronic Devices & Circuits
Electronic Devices & Circuits For Electronics & Communication Engineering By www.thegateacademy.com Syllabus Syllabus for Electronic Devices Energy Bands in Intrinsic and Extrinsic Silicon, Carrier Transport,
More informationNEM Relay Design for Compact, Ultra-Low-Power Digital Logic Circuits
NEM Relay Design for Compact, Ultra-Low-Power Digital Logic Circuits T.-J. K. Liu 1, N. Xu 1, I.-R. Chen 1, C. Qian 1, J. Fujiki 2 1 Dept. of Electrical Engineering and Computer Sciences University of
More informationDocumentToPDF trial version, to remove this mark, please register this software.
PAPER PRESENTATION ON Carbon Nanotube - Based Nonvolatile Random Access Memory AUTHORS M SIVARAM PRASAD Sivaram.443@gmail.com B N V PAVAN KUMAR pavankumar.bnv@gmail.com 1 Carbon Nanotube- Based Nonvolatile
More informationBachelor Thesis The applicability of SrTiO 3 in memristive devices - a preliminary investigation
Bachelor Thesis The applicability of SrTiO 3 in memristive devices - a preliminary investigation by T. van Dalfsen (s1023055) & J. van Dam (s1013734) As presented on November 1, 2013 Supervisors: Prof.
More informationClassification of Solids
Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples
More information12. Memories / Bipolar transistors
Technische Universität Graz Institute of Solid State Physics 12. Memories / Bipolar transistors Jan. 9, 2019 Technische Universität Graz Institute of Solid State Physics Exams January 31 March 8 May 17
More informationStabilizing the forming process in unipolar resistance switching
Stabilizing the forming process in unipolar resistance switching using an improved compliance current limiter S. B. Lee, 1 S. H. Chang, 1 H. K. Yoo, 1 and B. S. Kang 2,a) 1 ReCFI, Department of Physics
More informationCapacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009
Wilfrid Laurier University June 4, 2009 Capacitor an electronic device which consists of two conductive plates separated by an insulator Capacitor an electronic device which consists of two conductive
More informationLecture 0: Introduction
Lecture 0: Introduction Introduction q Integrated circuits: many transistors on one chip q Very Large Scale Integration (VLSI): bucketloads! q Complementary Metal Oxide Semiconductor Fast, cheap, low power
More informationUltralow-Power Reconfigurable Computing with Complementary Nano-Electromechanical Carbon Nanotube Switches
Ultralow-Power Reconfigurable Computing with Complementary Nano-Electromechanical Carbon Nanotube Switches Presenter: Tulika Mitra Swarup Bhunia, Massood Tabib-Azar, and Daniel Saab Electrical Eng. And
More informationMemory, Latches, & Registers
Memory, Latches, & Registers 1) Structured Logic Arrays 2) Memory Arrays 3) Transparent Latches 4) How to save a few bucks at toll booths 5) Edge-triggered Registers L13 Memory 1 General Table Lookup Synthesis
More informationThin Film Transistors (TFT)
Thin Film Transistors (TFT) a-si TFT - α-si:h (Hydrogenated amorphous Si) deposited with a PECVD system (low temp. process) replaces the single crystal Si substrate. - Inverted staggered structure with
More informationCopyright. Yao-Feng Chang
Copyright by Yao-Feng Chang 2015 The Dissertation Committee for Yao-Feng Chang Certifies that this is the approved version of the following dissertation: Intrinsic Unipolar SiO x -based Resistive Switching
More informationAberration-corrected TEM studies on interface of multilayered-perovskite systems
Aberration-corrected TEM studies on interface of multilayered-perovskite systems By Lina Gunawan (0326114) Supervisor: Dr. Gianluigi Botton November 1, 2006 MSE 702(1) Presentation Outline Literature Review
More informationChapter 12: Electrical Properties. RA l
Charge carriers and conduction: Chapter 12: Electrical Properties Charge carriers include all species capable of transporting electrical charge, including electrons, ions, and electron holes. The latter
More informationRedefining the Speed Limit of Phase Change Memory Revealed by Time-resolved Steep Threshold-Switching Dynamics of AgInSbTe Devices
Supplementary Information Redefining the Speed Limit of Phase Change Memory Revealed by ime-resolved Steep hreshold-switching Dynamics of AgInSbe Devices Krishna Dayal Shukla 1, Nishant Saxena 1, Suresh
More informationChapter 3 Chapter 4 Chapter 5
Preamble In recent years bismuth-based, layer-structured perovskites such as SrBi 2 Nb 2 O 9 (SBN) and SrBi 2 Ta 2 O 9 (SBT) have been investigated extensively, because of their potential use in ferroelectric
More informationPage 1. A portion of this study was supported by NEDO.
MRAM : Materials and Devices Current-induced Domain Wall Motion High-speed MRAM N. Ishiwata NEC Corporation Page 1 A portion of this study was supported by NEDO. Outline Introduction Positioning and direction
More informationSEMICONDUCTORS. Conductivity lies between conductors and insulators. The flow of charge in a metal results from the
SEMICONDUCTORS Conductivity lies between conductors and insulators The flow of charge in a metal results from the movement of electrons Electros are negatively charged particles (q=1.60x10-19 C ) The outermost
More informationFrom Hall Effect to TMR
From Hall Effect to TMR 1 Abstract This paper compares the century old Hall effect technology to xmr technologies, specifically TMR (Tunnel Magneto-Resistance) from Crocus Technology. It covers the various
More informationLECTURE 23. MOS transistor. 1 We need a smart switch, i.e., an electronically controlled switch. Lecture Digital Circuits, Logic
LECTURE 23 Lecture 16-20 Digital Circuits, Logic 1 We need a smart switch, i.e., an electronically controlled switch 2 We need a gain element for example, to make comparators. The device of our dreams
More informationDevice 3D. 3D Device Simulator. Nano Scale Devices. Fin FET
Device 3D 3D Device Simulator Device 3D is a physics based 3D device simulator for any device type and includes material properties for the commonly used semiconductor materials in use today. The physical
More informationCMOS Digital Integrated Circuits Lec 13 Semiconductor Memories
Lec 13 Semiconductor Memories 1 Semiconductor Memory Types Semiconductor Memories Read/Write (R/W) Memory or Random Access Memory (RAM) Read-Only Memory (ROM) Dynamic RAM (DRAM) Static RAM (SRAM) 1. Mask
More informationDigital Electronics Electronics, Devices and Circuits
Digital Electronics Electronics, Devices and Circuits Dr. I. J. Wassell Introduction In the coming lectures we will consider how logic gates can be built using electronic circuits First, basic concepts
More informationDigital Integrated Circuits A Design Perspective. Semiconductor. Memories. Memories
Digital Integrated Circuits A Design Perspective Semiconductor Chapter Overview Memory Classification Memory Architectures The Memory Core Periphery Reliability Case Studies Semiconductor Memory Classification
More informationSurfaces, Interfaces, and Layered Devices
Surfaces, Interfaces, and Layered Devices Building blocks for nanodevices! W. Pauli: God made solids, but surfaces were the work of Devil. Surfaces and Interfaces 1 Role of surface effects in mesoscopic
More informationResistive Switching Statistics in MIM structures for Non-volatile memory applications
ESCOLA D ENGINYERIA Electronic Engineering Department Resistive Switching Statistics in MIM structures for Non-volatile memory applications A dissertation submitted by Xiaojuan Lian In fulfillment of the
More informationSemiconductor Memories
Semiconductor References: Adapted from: Digital Integrated Circuits: A Design Perspective, J. Rabaey UCB Principles of CMOS VLSI Design: A Systems Perspective, 2nd Ed., N. H. E. Weste and K. Eshraghian
More informationCH676 Physical Chemistry: Principles and Applications. CH676 Physical Chemistry: Principles and Applications
CH676 Physical Chemistry: Principles and Applications Band Theory Fermi-Dirac Function f(e) = 1/[1 + e (E-E F)/kT ] Where the Fermi Energy, E F, is defined as the energy where f(e) = 1/2. That is to say
More informationMemory Trend. Memory Architectures The Memory Core Periphery
Semiconductor Memories: an Introduction ti Talk Overview Memory Trend Memory Classification Memory Architectures The Memory Core Periphery Reliability Semiconductor Memory Trends (up to the 90 s) Memory
More informationAnalysis of charge-transport properties in GST materials for next generation phase-change memory devices. Fabio Giovanardi Tutor: Prof.
Analysis of charge-transport properties in GST materials for next generation phase-change memory devices Fabio Giovanardi Tutor: Prof. Massimo Rudan The use of phase-change chalcogenide alloy films to
More informationCONDUCTIVITY MECHANISMS AND BREAKDOWN CHARACTERISTICS OF NIOBIUM OXIDE CAPACITORS
CONDUCTIVITY MECHANISMS AND BREAKDOWN CHARACTERISTICS OF NIOBIUM OXIDE CAPACITORS J. Sikula, J. Hlavka, V. Sedlakova and L. Grmela Czech Noise Research Laboratory, Brno University of Technology Technicka,
More information