Realization of Tunable Pole-Q Current-Mode OTA-C Universal Filter
|
|
- Charlene Floyd
- 5 years ago
- Views:
Transcription
1 Circuits Syst Signal Process (2010) 29: DOI /s Realization of Tunable Pole-Q Current-Mode OTA-C Universal Filter Pipat Prommee Thanate Pattanatadapong Received: 23 February 2009 / Revised: 22 October 2009 / Published online: 27 April 2010 Springer Science+Business Media, LLC 2010 Abstract A realization of a current-mode operational transconductance amplifiercapacitor (OTA-C) universal filter with tunable pole-q is proposed. A biquadratic band-reject function is used as the initial synthesis function based on three integrator blocks. Consequently, the proposed filter uses a total of three multiple-output OTAs and three grounded capacitors. Five types of transfer functions, namely, low-pass, high-pass, band-pass, band-reject, and all-pass responses, can be obtained without changing the circuit topology. The pole-q (Q 0 ) and the pole-frequency (ω 0 ) parameters are independently tuned. The Q 0 and ω 0 parameters are electronically tuned by adjusting the transconductance gains of the OTAs. Furthermore, Q 0 can be tuned by varying the capacitor manually without affecting ω 0. SPICE simulation results of the proposed filter are presented. Keywords OTA Current-mode circuit Universal filter Tunable pole-q 1 Introduction Current-mode active filters have received much attention due to their many advantages over their voltage-mode counterparts. Because of the simplicity of the building blocks used, current-mode circuits can be very compact and operate with low voltages. This leads to reduced area and power consumption requirements, as well as P. Prommee ( ) T. Pattanatadapong Department of Telecommunications Engineering, Faculty of Engineering, King Mongkut s Institute of Technology Ladkrabang, Bangkok 10520, Thailand pipat@telecom.kmitl.ac.th P. Prommee kppipat@kmitl.ac.th T. Pattanatadapong thanate@telecom.kmitl.ac.th
2 914 Circuits Syst Signal Process (2010) 29: improved high frequency performance. Moreover, the integrated circuit implementation uses grounded capacitors to eliminate the effect of bottom-plate parasitic capacitances. In current-mode circuits, summing of the current signals requires only a circuit node. As a result, current signals can be easily replicated and scaled using current mirrors, and they have the potential to operate at higher signal bandwidths [1]. Previous works that utilize the current-mode technique include those using current followers (CFs) [2], secondgenerationcurrentconveyors (CCIIs) [3 5], andoperational transconductance amplifiers (OTAs) [6 11]. Some OTA-C filters use four OTAs and three grounded capacitors to obtain the five types of standard transfer functions [12]. The analytical synthesis of filter functions based on OTA-C [13, 14] and DDCC [15] has also been introduced. Several current-mode universal biquadratic filters with multiple-input and singleoutput design have been presented in the literature. Chang and Pai [6, 7] haveproposed circuits which use two to three OTAs, where the pole-q(q 0 ) is electronically tunable. However, the pole-frequency (ω 0 ) and Q 0 cannot be tuned independently. Another filter [8] uses three OTAs, wherein the ω 0 and Q 0 parameters can be electronically tuned by adjusting the finite current bias of the OTA. This paper proposes a universal filter with tunable pole-q based on three multipleoutput OTAs (MOOTAs) and three grounded capacitors. A synthesis algorithm for a band-reject function based on lossless integrator building blocks is proposed. The pole-q can be independently tuned by adjusting the transconductance gain of the OTA or by changing a grounded capacitor. Low sensitivities within ±0.5 with respect to the passive and active elements are obtained. The filter characteristic transfer functions including low-pass (LP), high-pass (HP), band-pass (BP), band-reject (BR), and all-pass (AP) can be obtained without changing the circuit topology. 2 Circuit Descriptions 2.1 Multiple-Output OTA and Lossless Integrator A simple MOOTA is realized by bipolar junction transistors (BJTs) as shown in Fig. 1. It is a versatile device that produces multiple positive and negative output currents I O by applying a differential input voltage V in. The transconductance g m is given by ± I O = g m I B (1) V in 2V T where I B is the bias current and V T denotes the thermal voltage ( 26 mv) at room temperature. Consequently, g m can be electronically tuned by varying I B. The current-mode lossless integrator in Fig. 2 is implemented using one MOOTA and a grounded capacitor. The transfer function of the lossless integrator can be expressed as A(s) = i O i in =± g m sc (2)
3 Circuits Syst Signal Process (2010) 29: Fig. 1 Top: Basic MOOTA implementation using BJTs. Bottom: Circuit symbol Fig. 2 Implementation of a current-mode lossless integrator using MOOTA and a grounded capacitor 2.2 Band-Reject Biquad Structure Realization A band-reject transfer function with normalized frequency, ω 0 = 1, is written as V O s = V in s 2 (3) + s/q + 1 The transfer function in (3) can be rearranged so that only integrators are required. The integrator form functions are obtained by multiplying both numerator and denominator by 1/s 2, V O [ 1 + 1/(sQ) + 1/s 2 ] = V in ( 1 + 1/s 2 ) (4)
4 916 Circuits Syst Signal Process (2010) 29: Fig. 3 Block diagram of a band-reject filter Fig. 4 Proposed tunable pole-q current-mode universal filter Rewriting (4)as ( Vin V O V O = V in + s 2 ) V O sq we can realize (5) using three lossless integrators to form first-order and second-order lossless integrators, as shown on the block diagram in Fig. 3. Note that the pole-q of the first-order integrator (1/sQ) in the denominator of (3) is completely separated from the second-order integrator (1/s 2 ) block. 2.3 Realization of Proposed Universal Filter The current-mode approach with OTA is used to design the proposed filter in Fig. 3. The OTA is selected due to its simple structure and current-controlled characteristic. Replacing the lossless integrators in the block diagram of Fig. 3 by the OTA integrators in Fig. 2, we obtain the final circuit shown in Fig. 4. The second-order lossless integrator (1/s 2 ) block is implemented using two cascaded lossless integrators OTA 1 -C 1 and OTA 2 -C 2. Likewise, the first-order lossless integrator (1/sQ) block is replaced by a lossless integrator OTA 3 -. Both the positive output of OTA 3 and the negative output of OTA 1 are fed back to OTA 2.The current output is obtained by summing the positive current output of OTA 1 and the negative current output of OTA 3. Another branch of current output is fed back to the input of OTA 3 according to the block diagram. (5)
5 Circuits Syst Signal Process (2010) 29: Using KCL, the current outputs of OTA 1 and OTA 3 can be shown to be the following functions: I O1 = I 1g m1 g m2 g m3 + I 2 (g m1 g m2 g m3 + sg m1 g m2 ) D 1 (s) I O2 = I 1( g m3g m2 C 2 ) + I 2 ( g m3g m2 C 2 + s g m2 C 2 ) D(s) I O3 = I 1(g m1 g m2 g m3 + s 2 g m3 ) I 2 g m1 g m2 g m3 D 1 (s) (6) (7) (8) where D 1 (s) = s 3 + s 2 g m3 + sg m1 g m2 and D(s) = s 2 + s g m3 g m1 g m2. The output current of the proposed filter, I O = I O1 + I O3 + I 3, can be rewritten as I O = I 1s g m3 g + I m1 g m2 2 D(s) + I 3 D(s) + It can be seen that the proposed filter can realize five types of transfer functions under the following conditions. (1) The LP response can be realized when I 1 = I 3 = 0 and I 2 = an input current signal I in. (2) The BP response can be realized when I 2 = I 3 = 0 and I 1 = I in. (3) The HP response can be realized when I 1 = I 2 = I 3 = I in. (4) The BR response can be realized when I 2 = 0 and I 1 = I 3 = I in. (5) The AP response can be realized when I 2 = 0 and I 1 /2 = I 3 = I in. Note that there is no critical component matching conditions in the realization of any of the above filters. Comparing the expression for the denominator D(s) to the characteristic equation D(s) = s 2 + s ω 0 Q 0 + ω0 2, the parameters Q 0 and ω 0 are given by ( ) gm1 g m2 C3 Q 0 = (10) g m3 and gm1 g m2 ω 0 = (11) Using (1), Q 0 and ω 0 in (10) and (11), respectively, can be rewritten in terms of current biases as and Q 0 = ( ) I B1 I B2 C3 I B3 (9) (12) ω 0 = 1 I B1 I B2 (13) 2V T
6 918 Circuits Syst Signal Process (2010) 29: Fig. 5 Generic small signal OTA macromodel Observe that because of the /I B3 factor in (12), the pole-q (Q 0 ) can be tuned without affecting the pole-frequency ω 0 in (13). For Q 0 = 1, it is recommended to use g m1 = g m2 = g m3 = g m and C 1 = C 2 = = C. Then the pole-frequency can be electronically tuned by adjusting the transconductance (g m ) gain of the MOOTAs. The pole-q can be tuned by one of two approaches: electronic tuning, or varying the capacitance. For electronic tuning we let = C and g m1 = g m2 = g m. The pole-q becomes g m /g m3. For tuning of pole-q by varying the capacitance, C 1 = C 2 = C and g m = g m3. In this case the pole-q becomes /C. The active and passive sensitivities with respect to ω 0 and pole-q are given by S ω 0 g m1 = S ω 0 g m2 = S Q 0 g m1 = S Q 0 g m2 = 0.5 (14) S ω 0 C 1 = S ω 0 C 2 = S Q 0 C 1 = S Q 0 C 2 = 0.5 (15) S ω 0 g m3 = S ω 0 = 0 (16) S Q 0 g m3 = S Q 0 = 1 (17) 3 Effects of Nonidealities of the OTAs The characteristics of the nonideal OTA play an important role when dealing with a wide frequency range of operation. The simple but practical small signal OTA macromodel in Fig. 5 is used to facilitate filter performance characterization. The macromodel components are characterized by (i) the differential and common-mode input capacitances, denoted by C d and C c, respectively; (ii) the output capacitance C O and resistance (conductance) R o (g o ); and (iii) the frequency-dependent transconductance g m.from[16], the frequency dependence of g m can be approximated as g m = g m0 ( ωp2 s + ω p2 ) = g m0 ( sτ ) g m0 (1 sτ) ωτ 1 (18) where g m0 is the transconductance of the ideal OTA, ω p2 denotes the second pole of the OTA, and τ = 1/ω p2. Consequently, in the frequency range of interest, ω 0 ω p2, the nonideal transfer function A n (s) of the OTA lossless integrators may be approximated as A n (s) = g m (1 sτ) (19) sc
7 Circuits Syst Signal Process (2010) 29: Now we reanalyze the proposed circuit in Fig. 4 using (19), with τ i = 1/ω p2i representing the delay of the ith OTA-C integrator. The nonideal transfer functions become T LP n (s) = g m1 g m2 [s 2 τ 1 τ 2 s(τ 1 + τ 2 ) + 1] D n1 (s) (20) s2 T HPn (s) = D n1 (s) T BPn (s) = g m3 (s s 2 τ 3 ) D n1 (s) T BRn (s) = s2 + g m1g m2 [s 2 τ 1 τ 2 s(τ 1 + τ 2 ) + 1] D n1 (s) T AP n (s) = s2 g m3 [s s 2 τ 3 ]+ g m1g m2 [s 2 τ 1 τ 2 s(τ 1 + τ 2 ) + 1] D n1 (s) (21) (22) (23) (24) where D n1 (s) = s 2 ( 1 g m3 τ 3 + g m1g m2 ) (τ 1 τ 2 ) ( gm3 + s g m1g m2 (τ 1 + τ 2 ) ) + g m1g m2 (25) Comparing (25)toD(s) = s 2 + s ω 0 Q 0 + ω0 2, the parameters of the nonideal multifunction filter are then expressed as ω 0n1 = g m1 g m2 1 g m3 τ 3 + g m1g m2 (τ 1 τ 2 ) (26) Q 0n1 = gm1 g m2 g m3 [1 g m3 τ 3 + g m1g m2 (τ 1 τ 2 )] g m1g m2 (τ 1 + τ 2 ) (27) Equations (26) and (27) show how the parasitic delays τ i of the OTA i affect the filter performance. In the case where τ i satisfy the following conditions: ( ) gm3 τ 3 + g m1g m2 C 1 C 2 (τ 1 τ 2 ) 1 ( ) ( ) (28) gm1 g m2 gm3 (τ 1 + τ 2 ) the effect of the parasitic delay is negligible. Next we consider the effects of the other parasitic elements (resistances and capacitances) while taking g m as ideal (g m = g m0 ) and neglecting the parasitic delay.
8 920 Circuits Syst Signal Process (2010) 29: Table 1 Model parameters of AT&T CBIC-R transistors.model PR100N PNP (IS = 73.5E 18 BF = 110 NF = 1VAF= 51.8 IKF= 2.359E 03 + ISE = 25.1E 16 NE = BR = VAR = 936 IKR = 6.478E 03 + NR = 1ISC= 0NC= 2RE= 3RB= 327 IRB = 0 RBM = RC = 50 + CJE = 0.180E 12 VJE = 0.5 MJE = 0.28 CJC = 0.164E 12 VJC = MJC = 0.4 XCJC = CJS = 1.03E 12 VJS = 0.55 MJS = 0.35 FC = TF = 0.610E 09 TR = 0.610E 08 EG = XTB = XTI = 1.7).MODEL NR100N NPN (IS = 121E 18 BF = IRB = 0NF= 1NR= 1 + VAF = IKF = 6.974E 03 ISE = 36E 16 ISC = 0NE= BR = VAR = IKR = 2.198E 03 RE = 1RB= RBM = 25 RC = 50 + CJE = 0.214E 12 VJE = 0.5 MJE = 0.28 CJC = 0.983E 13 VJC = 0.5 MJC = XCJC = CJS = 0.913E 12 VJS = 0.64 MJS = 0.4 FC = 0.5 TF = 0.425E 09 + TR = 0.425E 08 EG = XTB = XTI = 2) In this case, the denominator of the proposed filter is approximated as [ (gm1 ) D n2 (s) g m2 = C 1 + g ( m3 1 C 2 C 3 R ) C 1 R 2 C 2 ] s R 2 R 3 C 2 C 3 [ (gm3 C 3 R 1 R 3 C 1 C 3 R 1 R 2 C 1 C 2 ) ( 1 + R C 1 R ) ] C 2 R 3 + s 2 (29) C 3 where R 1 = R O2, R 2 = R 3 = R O1 R O3, C 1 = C 1 + C O2 + C c1 + C d1, C 2 = C 2 + C O1 + C O3 + C c2 + C d2 and C 3 = + C O1 + C O3 + C c3 + C d3. Assuming that every OTA is matched based on the identical output resistances (R Oi = R O ),the parameters of the nonideal multifunction filter are expressed as ω 0n2 = g m1 g m2 C 1 C 2 + g ( m3 1 C 3 R O C ) C 2 (30) Q 0n2 = gm1 g m2 C 1 + g m3 C 2 R ( 1 O C C 2 ) ( g m3 ) + R 1 O ( 1 C C ) (31) Equations (30) and (31) show how the parasitic resistances and capacitances of the OTAs affect the filter performances. For the specific case where it is assumed that the parasitic capacitances C Oi = C O, C di = C d, and C ci = C c, the parasitic effects on the pole-frequency and pole-q can be avoided by choosing C 1 (C O + C c + C d ) (32) C 2, (2C O + C c + C d ) (33)
9 Circuits Syst Signal Process (2010) 29: Simulation Results We investigate the characteristics and performance of our proposed current-mode OTA-C universal filter using a SPICE simulation. The simple BJT MOOTA is constructed with ±2 V power supplies. Model parameters of the AT&T CBIC-R process realizing the MOOTA are listed in Table 1. For Q 0 = 1, the pole-frequency of the proposed filter is electronically controlled by the identical conditions of MOOTA transconductances and capacitors, i.e., g m1 = g m2 = g m3 = g m and C 1 = C 2 = = C. Example values of bias currents and capacitors are given in Table 2 for Q 0 > 1. Figure 6 depicts the simulated current-mode amplitude responses for the BR, LP, BP, and HP filters based on the input current conditions in Sect The filters are designed for f 0 = 1 MHz by choosing C 1 = C 2 = 2 nf and g m1 = g m2 = g m3 = Table 2 Example and I B3 values for tunable pole-q at 100 khz Q 0 I B1 = I B2 = I B3 = 70 µa I B1 = I B2 = 70 µa C 1 = C 2 = 2nF C 1 = C 2 = = 2nF (nf) I B3 (µa) Fig. 6 Filter amplitude response characteristics for the BR, LP, BP, and HP filters with I B = 70 µa and C = 0.2 nf
10 922 Circuits Syst Signal Process (2010) 29: Fig. 7 All-pass amplitude and phase response characteristics at 1 MHz Fig. 8 Tuning the pole-q of the BP response by changing capacitor g m = 1.35 ms (I B = 70 µa). The simulated current-mode amplitude and phase responses for the AP filter are shown in Fig. 7. Figure 8 depicts the tunable pole-q obtained using the approach of varying a capacitor. We assign C 1 = C 2 = 2nF, I B1 = I B2 = I B3 = 70 µa, and vary the capacitor between 2 and 128 nf. Alternatively, the electronic tunability of pole-q is illustrated in Fig. 9 by assigning C 1 = C 2 = 2nF,I B1 = I B2 = 70 µa, and varying the bias current I B3 from to 70 µa. Note that in both Figs. 8 and 9 the tunable pole-q values, Q 0 = 1, 2, 4, 8, 16, 32, and 64, are obtained without affecting the ω 0 parameter. Figure 10 depicts the BP amplitude response characteristics with tunable polefrequency. The bias current I B is varied from 7 to 70 µa and C 1 = C 2 = = 0.2nF. Consequently, f 0 is varied from 100 khz to 1 MHz.
11 Circuits Syst Signal Process (2010) 29: Fig. 9 Tuning the pole-q of the BP response by varying I B3 Fig. 10 Tuning the frequency (f 0 ) of the BP filter through OTA current bias I B 5 Conclusion This paper presents an approach for multiple-input single-output filter synthesis using the biquadratic BR function. The proposed filter is realized using MOOTAs. Five types of current-mode standard transfer functions are obtained without changing the circuit topology. The filter can independently tune the pole-frequency and the pole-q. The pole-frequency and the pole-q can be electronically tuned through the OTA bias currents. Alternatively, the pole-q can also be tuned by varying a particular capacitor in the circuit. We investigate the parasitic effects of nonideal OTAs on the filter characteristics. We show that these effects can be made negligible if the design sat-
12 924 Circuits Syst Signal Process (2010) 29: isfies certain circuit conditions. Lastly, the proposed circuit configuration is suitable for implementation using either bipolar or CMOS technologies. Acknowledgements The authors would like to thank Dr. M.N.S. Swamy and Dr. Ananda Mohan and the anonymous reviewers who gave us valuable comments and suggestions. The authors would also like to thank our colleagues Dr. Tulaya Limpiti, Dr. Att Kruafak, and Mr. Natapong Wongprommoon for their editorial comments which significantly improved the manuscript. References 1. R.F. Ahmed, I.A. Awad, A.M. Soliman, A transformation method from voltage-mode OP-amp-RC circuits to current-mode Gm-C circuits. Circuits Syst. Signal Process. 25, (2006) 2. S.I. Liu, J.J. Chen, Y.S. Hwang, New Current mode biquad filters using current follower. IEEE Trans. Circuits Syst. 42, (1995) 3. E.O. Gunes, A. Toker, S. Ozoguz, Insensitive current-mode universal filter with minimum component using dual-output current conveyors. Electron. Lett. 35, (1999) 4. A. Fabre, O. Saaid, F. Wiest, C. Boucheron, Current controlled bandpass filter based on translinear conveyors. Electron. Lett. 31, (1995) 5. A.M. Soliman, New current-mode biquad filters using current conveyors. Int. J. Electron. Commun. (AEÜ) 51, (1997) 6. C. Chang, New multifunction OTA-C biquads. IEEE Trans. Circuits Syst. 46, (1999) 7. C. Chang, S. Pai, Universal current-mode OTA-C biquad with the minimum components. IEEE Trans. Circuits Syst. 47, (2000) 8. C. Chang, B.M. Al-Hashimi, J.N. Ross, Unified active filter biquad structure. IEE Proc. Circuits Dev. Syst. 151, (2004) 9. J. Wu, Current-mode high-order OTA-C filter. Int. J. Electron. 76, (1994) 10. M.T. Abuelma atti, A. Bentrcia, New universal current-mode multiple-input multiple-output OTA-C filter. In: IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2004, pp (2004) 11. E. Sanchez-sinencio, R.L. Geiger, H. Nevarez-Lozano, Generation of continuous-time two integrator loop OTA filter structures. IEEE Trans. Circuits Syst. 35, (1988) 12. J. Wu, E. El-Masry, Design of current-mode ladder filters using coupled-biquads. IEEE Trans. Circuits Syst. 45, (1998) 13. C.M. Chang, C.L. Hou, W.Y. Chung, J.W. Horng, C.K. Tu, Analytical synthesis of high-order singleended-input OTA-grounded C all-pass and band-reject filter structures. IEEE Trans. Circuits Syst. 53, (2006) 14. S.H. Tu, C.M. Chang, J.N. Ross, M.N.S. Swamy, Analytical synthesis of current-mode high-order single-ended-input OTA and equal-capacitor elliptic filter structures with the minimum number of components. IEEE Trans. Circuits Syst. 54, (2007) 15. C.M. Chang, A.M. Soliman, M.N.S. Swamy, Analytical synthesis of low-sensitivity high-order voltage-mode DDCC and FDCCII-grounded R and C all-pass filter structures. IEEE Trans. Circuits Syst. 54, (2007) 16. H. Pevarez-Lozano, E. Sanchez-Sinencio, Minimum parasitic effects biquadratic OTA-C filter architectures. Analog Integr. Circuits Signal Process. 1, (1991)
BFR93A. NPN Silicon RF Transistor. For low-noise, high-gain broadband amplifiers at collector currents from 2 ma to 30 ma
NPN Silicon RF Transistor For lownoise, highgain broadband amplifiers at collector currents from ma to ma VPS5 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin
More informationDATA SHEET. PRF957 UHF wideband transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Mar 01.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D1 Supersedes data of 1999 Mar 1 1999 Jul 3 FEATURES PINNING Small size Low noise Low distortion High gain Gold metallization ensures excellent reliability.
More informationBipolar Junction Transistor (BJT) Model. Model Kind. Model Sub-Kind. SPICE Prefix. SPICE Netlist Template Format
Bipolar Junction Transistor (BJT) Model Old Content - visit altiumcom/documentation Modified by Admin on Sep 13, 2017 Model Kind Transistor Model Sub-Kind BJT SPICE Prefix Q SPICE Netlist Template Format
More informationType Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23
NPN Silicon RF Transistor* For broadband amplifiers up to GHz and fast nonsaturated switches at collector currents from 0.5 ma to 0 ma Complementary type: BFT9 (PNP) * Short term description ESD (Electrostatic
More informationType Marking Pin Configuration Package BGA427 BMs 1, IN 2, GND 3, +V 4, Out SOT343. Maximum Ratings Parameter Symbol Value Unit Device current I D
BGA7 SiMMICAmplifier in SIEGET Technologie Cascadable 0 Ωgain block Unconditionally stable Gain S = 8. db at.8 GHz (Appl.) gain S = db at.8 GHz (Appl.) IP out = +7 dbm at.8 GHz (V D =V, I D =9.mA) Noise
More informationBIPOLAR JUNCTION TRANSISTOR MODELING
BIPOLAR JUNCTION TRANSISTOR MODELING Introduction Operating Modes of the Bipolar Transistor The Equivalent Schematic and the Formulas of the SPICE Gummel-Poon Model A Listing of the Gummel-Poon Parameters
More informationBFP196W. NPN Silicon RF Transistor*
NPN Silicon RF Transistor* For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 ma to 80 ma Power amplifier for DECT
More informationBFP193. NPN Silicon RF Transistor*
NPN Silicon RF Transistor* For low noise, highgain amplifiers up to GHz For linear broadband amplifiers f T = 8 GHz, F = db at 900 MHz * Short term description ESD (Electrostatic discharge) sensitive device,
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR183W RHs 1=B 2=E 3=C SOT323
NPN Silicon RF Transistor* For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 8 GHz, F = 0.9 db at 900 MHz Pbfree (RoHS compliant) package ) Qualified according AEC
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR181 RFs 1=B 2=E 3=C SOT23
NPN Silicon RF Transistor* For low noise, highgain broadband amplifiers at collector currents from 0.5 ma to ma f T = 8 GHz, F = 0.9 db at 900 MHz Pbfree (RoHS compliant) package ) Qualified according
More informationDeliyannis, Theodore L. et al "Two Integrator Loop OTA-C Filters" Continuous-Time Active Filter Design Boca Raton: CRC Press LLC,1999
Deliyannis, Theodore L. et al "Two Integrator Loop OTA-C Filters" Continuous-Time Active Filter Design Boca Raton: CRC Press LLC,1999 Chapter 9 Two Integrator Loop OTA-C Filters 9.1 Introduction As discussed
More informationBFP193. NPN Silicon RF Transistor* For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers f T = 8 GHz, F = 1 db at 900 MHz
NPN Silicon RF Transistor* For low noise, highgain amplifiers up to GHz For linear broadband amplifiers f T = 8 GHz, F = db at 900 MHz Pbfree (RoHS compliant) package ) Qualified according AEC Q * Short
More informationBFP196W. NPN Silicon RF Transistor*
NPN Silicon RF Transistor* For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 ma to 80 ma Power amplifier for DECT
More information****** bjt model parameters tnom= temp= *****
****** HSPICE H 2013.03 64 BIT (Feb 27 2013) RHEL64 ****** Copyright (C) 2013 Synopsys, Inc. All Rights Reserved. Unpublished rights reserved under US copyright laws. This program is protected by law and
More informationExperimental verification of the Chua s circuit designed with UGCs
Experimental verification of the Chua s circuit designed with UGCs C. Sánchez-López a), A. Castro-Hernández, and A. Pérez-Trejo Autonomous University of Tlaxcala Calzada Apizaquito S/N, Apizaco, Tlaxcala,
More informationCharge-Storage Elements: Base-Charging Capacitance C b
Charge-Storage Elements: Base-Charging Capacitance C b * Minority electrons are stored in the base -- this charge q NB is a function of the base-emitter voltage * base is still neutral... majority carriers
More informationHomework Assignment 08
Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance
More informationSymbolic SPICE TM Circuit Analyzer and Approximator
Symbolic SPICE Symbolic SPICE TM Circuit Analyzer and Approximator Application Note AN-006: Magnetic Microphone Amplifier by Gregory M. Wierzba Rev 072010 A) Introduction The schematic shown below in Fig.
More informationResearch Article Current Mode Biquad Filter with Minimum Component Count
Hindawi Publishing Corporation Active and Passive Electronic Components Volume 2 Article ID 39642 7 pages doi:.55/2/39642 Research Article Current Mode Biquad Filter with Minimum Component Count Bhartendu
More informationGeneration of Four Phase Oscillators Using Op Amps or Current Conveyors
J. of Active and Passive Electronic Devices, Vol. 0, pp. 207 22 Reprints available directly from the publisher Photocopying permitted by license only 205 Old City Publishing, Inc. Published by license
More informationBerkeley. Two-Port Noise. Prof. Ali M. Niknejad. U.C. Berkeley Copyright c 2014 by Ali M. Niknejad. September 13, 2014
Berkeley Two-Port Noise Prof. Ali M. U.C. Berkeley Copyright c 2014 by Ali M. September 13, 2014 Noise Figure Review Recall that the noise figure of a two-port is defined by F = P N s + P Na P Ns = 1 +
More informationElectronic Circuits Summary
Electronic Circuits Summary Andreas Biri, D-ITET 6.06.4 Constants (@300K) ε 0 = 8.854 0 F m m 0 = 9. 0 3 kg k =.38 0 3 J K = 8.67 0 5 ev/k kt q = 0.059 V, q kt = 38.6, kt = 5.9 mev V Small Signal Equivalent
More informationOPERATIONAL AMPLIFIER APPLICATIONS
OPERATIONAL AMPLIFIER APPLICATIONS 2.1 The Ideal Op Amp (Chapter 2.1) Amplifier Applications 2.2 The Inverting Configuration (Chapter 2.2) 2.3 The Non-inverting Configuration (Chapter 2.3) 2.4 Difference
More informationACTIVE FILTER DESIGN has been thoroughly investigated
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I: FUNDAMENTAL THEORY AND APPLICATIONS, VOL 44, NO 1, JANUARY 1997 1 Structure Generation Design of Multiple Loop Feedback OTA-Grounded Capacitor Filters Yichuang
More informationLecture 6, ATIK. Switched-capacitor circuits 2 S/H, Some nonideal effects Continuous-time filters
Lecture 6, ATIK Switched-capacitor circuits 2 S/H, Some nonideal effects Continuous-time filters What did we do last time? Switched capacitor circuits The basics Charge-redistribution analysis Nonidealties
More informationResearch Article Additional High Input Low Output Impedance Analog Networks
Active and Passive Electronic Components Volume 2013, Article ID 574925, 9 pages http://dx.doi.org/10.1155/2013/574925 Research Article Additional High Input Low Output Impedance Analog Networks Sudhanshu
More informationThe general form for the transform function of a second order filter is that of a biquadratic (or biquad to the cool kids).
nd-order filters The general form for the transform function of a second order filter is that of a biquadratic (or biquad to the cool kids). T (s) A p s a s a 0 s b s b 0 As before, the poles of the transfer
More informationECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION
ECE-343 Test 2: Mar 21, 2012 6:00-8:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may
More informationHomework Assignment 09
Homework Assignment 09 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3-dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =
More informationProf. D. Manstretta LEZIONI DI FILTRI ANALOGICI. Danilo Manstretta AA
AA-3 LEZIONI DI FILTI ANALOGICI Danilo Manstretta AA -3 AA-3 High Order OA-C Filters H() s a s... a s a s a n s b s b s b s b n n n n... The goal of this lecture is to learn how to design high order OA-C
More informationDesign and Realization of Fractional Low-Pass Filter of 1.5 Order Using a Single Operational Transresistance Amplifier
Vol.9, No.9, (2016), pp.69-76 http://dx.doi.org/10.14257/ijsip.2016.9.9.07 Design and Realization of Fractional Low-Pass Filter of 1.5 Order Using a Single Operational Transresistance Amplifier Piyush
More informationLecture Notes for ECE 215: Digital Integrated Circuits
Lecture Notes for ECE 215: Digital Integrated Circuits J. E. Ayers Electrical and Computer Engineering Department University of Connecticut 2002 All rights reserved University of Connecticut 1 Introduction
More informationLecture 37: Frequency response. Context
EECS 05 Spring 004, Lecture 37 Lecture 37: Frequency response Prof J. S. Smith EECS 05 Spring 004, Lecture 37 Context We will figure out more of the design parameters for the amplifier we looked at in
More informationChaos in Modified CFOA-Based Inductorless Sinusoidal Oscillators Using a Diode
Chaotic Modeling and Simulation CMSIM) 1: 179-185, 2013 Chaos in Modified CFOA-Based Inductorless Sinusoidal Oscillators Using a iode Buncha Munmuangsaen and Banlue Srisuchinwong Sirindhorn International
More informationChapter 13 Small-Signal Modeling and Linear Amplification
Chapter 13 Small-Signal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 13-1 Chapter Goals Understanding of concepts related to: Transistors
More information1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp)
HW 3 1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) a) Obtain in Spice the transistor curves given on the course web page except do in separate plots, one for the npn
More informationActive Frequency Filters with High Attenuation Rate
Active Frequency Filters with High Attenuation Rate High Performance Second Generation Current Conveyor Vratislav Michal Geoffroy Klisnick, Gérard Sou, Michel Redon, Jiří Sedláček DTEEE - Brno University
More informationMaster Degree in Electronic Engineering. Analog and Telecommunication Electronics course Prof. Del Corso Dante A.Y Switched Capacitor
Master Degree in Electronic Engineering TOP-UIC Torino-Chicago Double Degree Project Analog and Telecommunication Electronics course Prof. Del Corso Dante A.Y. 2013-2014 Switched Capacitor Working Principles
More informationSemiconductor Device Modeling and Characterization EE5342, Lecture 15 -Sp 2002
Semiconductor Device Modeling and Characterization EE5342, Lecture 15 -Sp 2002 Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/ L15 05Mar02 1 Charge components in the BJT From Getreau,
More informationLow-Sensitivity, Highpass Filter Design with Parasitic Compensation
Low-Sensitivity, Highpass Filter Design with Parasitic Compensation Introduction This Application Note covers the design of a Sallen-Key highpass biquad. This design gives low component and op amp sensitivities.
More informationExercise s = 1. cos 60 ± j sin 60 = 0.5 ± j 3/2. = s 2 + s + 1. (s + 1)(s 2 + s + 1) T(jω) = (1 + ω2 )(1 ω 2 ) 2 + ω 2 (1 + ω 2 )
Exercise 7 Ex: 7. A 0 log T [db] T 0.99 0.9 0.8 0.7 0.5 0. 0 A 0 0. 3 6 0 Ex: 7. A max 0 log.05 0 log 0.95 0.9 db [ ] A min 0 log 40 db 0.0 Ex: 7.3 s + js j Ts k s + 3 + j s + 3 j s + 4 k s + s + 4 + 3
More informationLecture 7, ATIK. Continuous-time filters 2 Discrete-time filters
Lecture 7, ATIK Continuous-time filters 2 Discrete-time filters What did we do last time? Switched capacitor circuits with nonideal effects in mind What should we look out for? What is the impact on system
More informationECE-343 Test 1: Feb 10, :00-8:00pm, Closed Book. Name : SOLUTION
ECE-343 Test : Feb 0, 00 6:00-8:00pm, Closed Book Name : SOLUTION C Depl = C J0 + V R /V o ) m C Diff = τ F g m ω T = g m C µ + C π ω T = g m I / D C GD + C or V OV GS b = τ i τ i = R i C i ω H b Z = Z
More informationLecture 140 Simple Op Amps (2/11/02) Page 140-1
Lecture 40 Simple Op Amps (2//02) Page 40 LECTURE 40 SIMPLE OP AMPS (READING: TextGHLM 425434, 453454, AH 249253) INTRODUCTION The objective of this presentation is:.) Illustrate the analysis of BJT and
More informationI. Frequency Response of Voltage Amplifiers
I. Frequency Response of Voltage Amplifiers A. Common-Emitter Amplifier: V i SUP i OUT R S V BIAS R L v OUT V Operating Point analysis: 0, R s 0, r o --->, r oc --->, R L ---> Find V BIAS such that I C
More informationBipolar Junction Transistor (BJT) - Introduction
Bipolar Junction Transistor (BJT) - Introduction It was found in 1948 at the Bell Telephone Laboratories. It is a three terminal device and has three semiconductor regions. It can be used in signal amplification
More information388 Facta Universitatis ser.: Elec. and Energ. vol. 14, No. 3, Dec A 0. The input-referred op. amp. offset voltage V os introduces an output off
FACTA UNIVERSITATIS (NI»S) Series: Electronics and Energetics vol. 14, No. 3, December 2001, 387-397 A COMPARATIVE STUDY OF TWO SECOND-ORDER SWITCHED-CAPACITOR BALANCED ALL-PASS NETWORKS WITH DIFFERENT
More informationAssignment 3 ELEC 312/Winter 12 R.Raut, Ph.D.
Page 1 of 3 ELEC 312: ELECTRONICS II : ASSIGNMENT-3 Department of Electrical and Computer Engineering Winter 2012 1. A common-emitter amplifier that can be represented by the following equivalent circuit,
More informationSystem on a Chip. Prof. Dr. Michael Kraft
System on a Chip Prof. Dr. Michael Kraft Lecture 3: Sample and Hold Circuits Switched Capacitor Circuits Circuits and Systems Sampling Signal Processing Sample and Hold Analogue Circuits Switched Capacitor
More informationSwitched-Capacitor Circuits David Johns and Ken Martin University of Toronto
Switched-Capacitor Circuits David Johns and Ken Martin University of Toronto (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) University of Toronto 1 of 60 Basic Building Blocks Opamps Ideal opamps usually
More informationElwakil, Ahmed S.; Kennedy, Michael Peter. Article (peer-reviewed)
Title Author(s) A semi-systematic procedure for producing chaos from sinusoidal oscillators using diode-inductor and FET-capacitor composites Elwakil, Ahmed S.; Kennedy, Michael Peter Publication date
More informationID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom
ID # NAME EE-255 EXAM 3 April 7, 1998 Instructor (circle one) Ogborn Lundstrom This exam consists of 20 multiple choice questions. Record all answers on this page, but you must turn in the entire exam.
More informationDeliyannis, Theodore L. et al "Active Elements" Continuous-Time Active Filter Design Boca Raton: CRC Press LLC,1999
Deliyannis, Theodore L. et al "Active Elements" Continuous-Time Active Filter Design Boca Raton: CRC Press LLC,999 Chapter 3 Active Elements 3. Introduction The ideal active elements are devices having
More informationSophomore Physics Laboratory (PH005/105)
CALIFORNIA INSTITUTE OF TECHNOLOGY PHYSICS MATHEMATICS AND ASTRONOMY DIVISION Sophomore Physics Laboratory (PH5/15) Analog Electronics Active Filters Copyright c Virgínio de Oliveira Sannibale, 23 (Revision
More informationECE 546 Lecture 11 MOS Amplifiers
ECE 546 Lecture MOS Amplifiers Spring 208 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 546 Jose Schutt Aine Amplifiers Definitions Used to increase
More informationFinal Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013.
Final Exam Name: Max: 130 Points Question 1 In the circuit shown, the op-amp is ideal, except for an input bias current I b = 1 na. Further, R F = 10K, R 1 = 100 Ω and C = 1 μf. The switch is opened at
More informationAN EQUATION FOR GENERATING CHAOS AND ITS MONOLITHIC IMPLEMENTATION
International Journal of Bifurcation and Chaos, Vol. 2, No. 2 (22) 2885 2895 c World Scientific Publishing Company AN EQUATION FOR GENERATING CHAOS AND ITS MONOLITHIC IMPLEMENTATION A. S. ELWAKIL Department
More informationELEC3106 Electronics: lecture 7 summary. SPICE simulations. Torsten Lehmann
ELEC3106, Electronics SPICE simulations 1 ELEC3106 Electronics: lecture 7 summary SPICE simulations Torsten Lehmann School of Electrical Engineering and Telecommunication The University of New South Wales
More informationStart with the transfer function for a second-order high-pass. s 2. ω o. Q P s + ω2 o. = G o V i
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
More informationAdvanced Analog Integrated Circuits. Operational Transconductance Amplifier II Multi-Stage Designs
Advanced Analog Integrated Circuits Operational Transconductance Amplifier II Multi-Stage Designs Bernhard E. Boser University of California, Berkeley boser@eecs.berkeley.edu Copyright 2016 by Bernhard
More informationLecture 19 - p-n Junction (cont.) October 18, Ideal p-n junction out of equilibrium (cont.) 2. pn junction diode: parasitics, dynamics
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 19-1 Lecture 19 - p-n Junction (cont.) October 18, 2002 Contents: 1. Ideal p-n junction out of equilibrium (cont.) 2. pn junction diode:
More informationESE319 Introduction to Microelectronics. Feedback Basics
Feedback Basics Stability Feedback concept Feedback in emitter follower One-pole feedback and root locus Frequency dependent feedback and root locus Gain and phase margins Conditions for closed loop stability
More informationHomework Assignment 11
Homework Assignment Question State and then explain in 2 3 sentences, the advantage of switched capacitor filters compared to continuous-time active filters. (3 points) Continuous time filters use resistors
More informationChapter 2 - DC Biasing - BJTs
Objectives Chapter 2 - DC Biasing - BJTs To Understand: Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationAppendix A Butterworth Filtering Transfer Function
Appendix A Butterworth Filtering Transfer Function A.1 Continuous-Time Low-Pass Butterworth Transfer Function In order to obtain the values for the components in a filter, using the circuits transfer function,
More informationAdvanced Current Mirrors and Opamps
Advanced Current Mirrors and Opamps David Johns and Ken Martin (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) slide 1 of 26 Wide-Swing Current Mirrors I bias I V I in out out = I in V W L bias ------------
More informationAnalog Circuits and Systems
Analog Circuits and Systems Prof. K Radhakrishna Rao Lecture 27: State Space Filters 1 Review Q enhancement of passive RC using negative and positive feedback Effect of finite GB of the active device on
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFT93W PNP 4 GHz wideband transistor. Product specification Supersedes data of November 1992
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data o November 199 March 1994 FEATURES High power gain Gold metallization ensures excellent reliability SOT33 (S-mini) package. APPLICATIONS It is intended
More informationExact Analysis of a Common-Source MOSFET Amplifier
Exact Analysis of a Common-Source MOSFET Amplifier Consider the common-source MOSFET amplifier driven from signal source v s with Thévenin equivalent resistance R S and a load consisting of a parallel
More informationElectronic Devices and Circuits Lecture 18 - Single Transistor Amplifier Stages - Outline Announcements. Notes on Single Transistor Amplifiers
6.012 Electronic Devices and Circuits Lecture 18 Single Transistor Amplifier Stages Outline Announcements Handouts Lecture Outline and Summary Notes on Single Transistor Amplifiers Exam 2 Wednesday night,
More informationLecture 23: Negative Resistance Osc, Differential Osc, and VCOs
EECS 142 Lecture 23: Negative Resistance Osc, Differential Osc, and VCOs Prof. Ali M. Niknejad University of California, Berkeley Copyright c 2005 by Ali M. Niknejad A. M. Niknejad University of California,
More informationBiasing the CE Amplifier
Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC base-emitter voltage (note: normally plot vs. base current, so we must return to Ebers-Moll): I C I S e V BE V th I S e V th
More informationPiecewise Curvature-Corrected Bandgap Reference in 90 nm CMOS
IJSTE - International Journal of Science Technology & Engineering Volume 1 Issue 2 August 2014 ISSN(online) : 2349-784X Piecewise Curvature-Corrected Bandgap Reference in 90 nm CMOS P R Pournima M.Tech
More informationQuick Review. ESE319 Introduction to Microelectronics. and Q1 = Q2, what is the value of V O-dm. If R C1 = R C2. s.t. R C1. Let Q1 = Q2 and R C1
Quick Review If R C1 = R C2 and Q1 = Q2, what is the value of V O-dm? Let Q1 = Q2 and R C1 R C2 s.t. R C1 > R C2, express R C1 & R C2 in terms R C and ΔR C. If V O-dm is the differential output offset
More information55:041 Electronic Circuits The University of Iowa Fall Exam 2
Exam 2 Name: Score /60 Question 1 One point unless indicated otherwise. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.35 μs. Estimate the 3 db bandwidth of the amplifier.
More informationChapter 2 Switched-Capacitor Circuits
Chapter 2 Switched-Capacitor Circuits Abstract his chapter introduces SC circuits. A brief description is given for the main building blocks of a SC filter (operational amplifiers, switches, capacitors,
More informationCARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130
ALETON UNIVESITY FINAL EXAMINATION December 005 DUATION 3 HOUS No. of Students 130 Department Name & ourse Number: Electronics ELE 3509 ourse Instructor(s): Prof. John W. M. ogers and alvin Plett AUTHOIZED
More informationVery Wide Range Tunable CMOS/Bipolar Current Mirrors with Voltage Clamped Input
Very Wide Range Tunable CMOS/Bipolar Current Mirrors with Voltage Clamped Input Teresa Serrano-Gotarredona, Bernabé Linares-Barranco, and Andreas G. Andreou National Microelectronics Center (CNM), Ed.
More informationChapter 2. - DC Biasing - BJTs
Chapter 2. - DC Biasing - BJTs Objectives To Understand : Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationfigure shows a pnp transistor biased to operate in the active mode
Lecture 10b EE-215 Electronic Devices and Circuits Asst Prof Muhammad Anis Chaudhary BJT: Device Structure and Physical Operation The pnp Transistor figure shows a pnp transistor biased to operate in the
More informationSOT-23 Mark: 1A. = 25 C unless otherwise noted T A. Symbol Parameter Value Units
B E N39 TO-9 MMBT39 SOT-3 Mark: A B E PZT39 B SOT-3 E N39 / MMBT39 / PZT39 This device is designed as a general purpse amplifier and switch. The useful dynamic range extends t ma as a switch and t MHz
More information3. Basic building blocks. Analog Design for CMOS VLSI Systems Franco Maloberti
Inverter with active load It is the simplest gain stage. The dc gain is given by the slope of the transfer characteristics. Small signal analysis C = C gs + C gs,ov C 2 = C gd + C gd,ov + C 3 = C db +
More informationLecture 4, Noise. Noise and distortion
Lecture 4, Noise Noise and distortion What did we do last time? Operational amplifiers Circuit-level aspects Simulation aspects Some terminology Some practical concerns Limited current Limited bandwidth
More informationAmplifiers, Source followers & Cascodes
Amplifiers, Source followers & Cascodes Willy Sansen KULeuven, ESAT-MICAS Leuven, Belgium willy.sansen@esat.kuleuven.be Willy Sansen 0-05 02 Operational amplifier Differential pair v- : B v + Current mirror
More informationBiquad Filter. by Kenneth A. Kuhn March 8, 2013
by Kenneth A. Kuhn March 8, 201 The biquad filter implements both a numerator and denominator quadratic function in s thus its name. All filter outputs have identical second order denominator in s and
More informationLast Name _Di Tredici_ Given Name _Venere_ ID Number
Last Name _Di Tredici_ Given Name _Venere_ ID Number 0180713 Question n. 1 Discuss noise in MEMS accelerometers, indicating the different physical sources and which design parameters you can act on (with
More informationCHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE
CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE To understand Decibels, log scale, general frequency considerations of an amplifier. low frequency analysis - Bode plot low frequency response BJT amplifier Miller
More informationTranslinear Circuits
Translinear Circuits Bradley A. Minch Mixed Analog-Digital VLSI Circuits and Systems Lab Franklin W. Olin College of Engineering Needham, MA 02492 1200 bradley.minch@olin.edu April 2, 2009 Translinear
More informationRefinements to Incremental Transistor Model
Refinements to Incremental Transistor Model This section presents modifications to the incremental models that account for non-ideal transistor behavior Incremental output port resistance Incremental changes
More informationSecond-order filters. EE 230 second-order filters 1
Second-order filters Second order filters: Have second order polynomials in the denominator of the transfer function, and can have zeroth-, first-, or second-order polynomials in the numerator. Use two
More informationBJT Biasing Cont. & Small Signal Model
BJT Biasing Cont. & Small Signal Model Conservative Bias Design (1/3, 1/3, 1/3 Rule) Bias Design Example Small-Signal BJT Models Small-Signal Analysis 1 Emitter Feedback Bias Design R B R C V CC R 1 R
More informationClass E Design Formulas V DD
Class E Design Formulas V DD RFC C L+X/ω V s (θ) I s (θ) Cd R useful functions and identities Units Constants Table of Contents I. Introduction II. Process Parameters III. Inputs IV. Standard Class E Design
More informationFrequency Response Prof. Ali M. Niknejad Prof. Rikky Muller
EECS 105 Spring 2017, Module 4 Frequency Response Prof. Ali M. Niknejad Department of EECS Announcements l HW9 due on Friday 2 Review: CD with Current Mirror 3 Review: CD with Current Mirror 4 Review:
More informationApplication Report. Mixed Signal Products SLOA021
Application Report May 1999 Mixed Signal Products SLOA021 IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product
More informationEE 508 Lecture 24. Sensitivity Functions - Predistortion and Calibration
EE 508 Lecture 24 Sensitivity Functions - Predistortion and Calibration Review from last time Sensitivity Comparisons Consider 5 second-order lowpass filters (all can realize same T(s) within a gain factor)
More informationFRACTIONAL ORDER FILTER BASED ON FRACTIONAL CAPACITORS AND FRACTIONAL INDUCTOR
FRACTIONAL ORDER FILTER BASED ON FRACTIONAL CAPACITORS AND FRACTIONAL INDUCTOR MadhabChandraTripathy Assistant Professor College of Engineering and Technology Techno Campus, Ghatikia Bhubaneswar-751029
More informationLECTURE 130 COMPENSATION OF OP AMPS-II (READING: GHLM , AH )
Lecture 30 Compensation of Op AmpsII (/26/04) Page 30 LECTURE 30 COMPENSATION OF OP AMPSII (READING: GHLM 638652, AH 260269) INTRODUCTION The objective of this presentation is to continue the ideas of
More informationDESIGN MICROELECTRONICS ELCT 703 (W17) LECTURE 3: OP-AMP CMOS CIRCUIT. Dr. Eman Azab Assistant Professor Office: C
MICROELECTRONICS ELCT 703 (W17) LECTURE 3: OP-AMP CMOS CIRCUIT DESIGN Dr. Eman Azab Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 TWO STAGE CMOS OP-AMP It consists of two stages: First
More informationEE105 Fall 2015 Microelectronic Devices and Circuits Frequency Response. Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)
EE05 Fall 205 Microelectronic Devices and Circuits Frequency Response Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Amplifier Frequency Response: Lower and Upper Cutoff Frequency Midband
More informationDESIGN OF CMOS ANALOG INTEGRATED CIRCUITS
DESIGN OF CMOS ANALOG INTEGRATED CIRCUITS Franco Maloberti Integrated Microsistems Laboratory University of Pavia Continuous Time and Switched Capacitor Filters F. Maloberti: Design of CMOS Analog Integrated
More information