Type Marking Pin Configuration Package BGA427 BMs 1, IN 2, GND 3, +V 4, Out SOT343. Maximum Ratings Parameter Symbol Value Unit Device current I D
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1 BGA7 SiMMICAmplifier in SIEGET Technologie Cascadable 0 Ωgain block Unconditionally stable Gain S = 8. db at.8 GHz (Appl.) gain S = db at.8 GHz (Appl.) IP out = +7 dbm at.8 GHz (V D =V, I D =9.mA) Noise figure NF =. db at.8 GHz Typical device voltage V D = V to V + V Reverse isolation > db (Appl.) Pbfree (RoHS compliant) package Circuit Diagram OUT IN EHA0778 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BGA7 BMs, IN,,, Out SOT Maximum Ratings Parameter Symbol Value Unit Device current I D ma Device voltage V D, 6 V Total power dissipation P tot 0 mw T S = 0 C RF input power P RFin 0 dbm Junction temperature T j 0 C Ambient temperature range T A Storage temperature range T stg Thermal Resistance Junction soldering point ) R thjs 9 K/W For calculation of R thja please refer to Application Note Thermal Resistance 009
2 BGA7 Electrical Characteristics at T A = C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics V D = V, Z o = 0Ω, Testfixture Appl. Insertion power gain S db f = 0. GHz f = GHz 7 8. Reverse isolation S Noise figure f = 0. GHz f = GHz Intercept point at the output Return loss input Return loss output Typical configuration NF.9. IP out + 7 dbm RL in > db RL out >9 Appl. Appl. 00 pf RF OUT nf 0 nf 00 pf BGA 7. pf 00 nh 00 pf RF IN 00 pf EHA0779 BGA 7 RF OUT RF IN 00 pf EHA0780 Note: ) Largevalue capacitors should be connected from pin to ground right at the device to provide a low impedance path (appl.). ) The use of plated through holes right at pin is essential for pcboardapplications. Thin boards are recommended to minimize the parasitic inductance to ground. 009
3 BGA7 SParameters at T A = C, (Testfixture, Appl.) f S S S S GHz MAG ANG MAG ANG MAG ANG MAG ANG V D = V, Z o = 0Ω Spicemodel BGA 7 IN BGA 7chip including parasitics R C P C C P R R C E Diode T T CP C P C P R EHA078 OUT T T R R R R C C P C P C P C P C P C'E'diode T0 T0.kΩ 80Ω.kΩ 70Ω.pF 0.pF 0.pF 0.6pF 0.pF 0.pF T 009
4 BGA7 Transistor Chip Data T (BerkleySPICE G.6 Syntax) : IS = 0.0 fa BF = 8. VAF = 9. V IKF = 0.69 A NE =.776 BR = 0.6 VAR =.68 V IKR = 0.0 A NC =. RB = Ω RBM =.9 Ω RE =.989 CJE =.76 ff VJE = V TF =.899 ps XTF = 0.6 ITF =.6 ma PTF = 0 deg VJC = 0.99 V MJC = 0.86 TR =.9 ns CJS = 0 ff MJS = 0 XTB = 0 XTI = FC = C'E'Diode Data (BerkleySPICE G.6 Syntax) : IS = fa N =.0 All parameters are ready to use, no scaling is necessary Package Equivalent Circuit: IN C L BO C C CB L BI C BE L BGA 7 Chip C E Diode L EI L EO L C L CI L CO C CE OUT NF =.00 ISE =.76 fa NR = ISC = 0.07 fa IRB = 0. A RC = 0.69 Ω MJE = VTF = V CJC = 96.9 ff XCJC = VJS = 0.7 V EG =. ev TNOM 00 K RS = 0 Ω L BI = 0.6 nh L BO = 0. nh L EI = 0. nh L EO = 0. nh L CI = 0.6 nh L CO = 0. nh C BE = 9 ff C CB = 6 ff C CE = ff C = 8 ff C = 88 ff C = 8 ff L = 0.6 nh L = 0. nh EHA078 Valid up to GHz Extracted on behalf of Infineon Technologies AG by: Institut für Mobilund Satellitentechnik (IMST) For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CDROM or see Internet: 009
5 BGA7 Insertion power gain S = f (f) Noise figure NF = f (f) V D, I D = parameter db V D,I D = parameter db S 0 RTF. VD=V, ID=7.mA VD=V, ID=9.mA GHz 0 f GHz 0 RTF Intercept point at the output IP out = f (f) V D,I D = parameter dbm IPout GHz 0 f 009
6 Package SOT BGA7 Package Outline ± MAX ±0. A x 0. M ±0. 0. MIN. 0. M Foot Print 0.6 Marking Layout (Example) 00, June Date code (YM) BGA0 Type code Standard Packing Reel ø80 mm =.000 Pieces/Reel Reel ø0 mm = Pieces/Reel A ± Manufacturer Pin Pin
7 BGA7 Edition 0096 Published by Infineon Technologies AG 876 Munich, Germany 009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (< Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered
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