BFR93A. NPN Silicon RF Transistor. For low-noise, high-gain broadband amplifiers at collector currents from 2 ma to 30 ma
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1 NPN Silicon RF Transistor For lownoise, highgain broadband amplifiers at collector currents from ma to ma VPS5 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package Rs = B = E = C SOT Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO V Collectoremitter voltage V CES Collectorbase voltage V CBO Emitterbase voltage V EBO Collector current 5 ma Base current I B Total power dissipation, T S C ) P tot mw Junction temperature T j 5 C Ambient temperature T A Storage temperature T stg Thermal Resistance Junction soldering point ) R thjs 9 K/W TS is measured on the collector lead at the soldering point to the pcb For calculation of RthJA please refer to Application Note Thermal Resistance Jun7
2 Electrical Characteristics at T A = 5 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collectoremitter breakdown voltage V (BR)CEO V = ma, I B = Collectoremitter cutoff current ES µa V CE = V, V BE = Collectorbase cutoff current BO na V CB = V, I E = Emitterbase cutoff current I EBO µa V EB = V, = DC current gain = ma, V CE = 8 V h FE 5 Jun7
3 Electrical Characteristics at T A = 5 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics (verified by random sampling) Transition frequency = ma, V CE = 8 V, f = 5 MHz Collectorbase capacitance V CB = V, f = MHz Collectoremitter capacitance V CE = V, f = MHz Emitterbase capacitance V EB =.5 V, f = MHz Noise figure = 5 ma, V CE = 8 V, Z S = Z Sopt, f = 9 MHz f =.8 Hz f T.5 Hz C cb.58.9 pf C ce. C eb.7 F. Power gain, maximum available ) ma = ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f = 9 MHz.5 f =.8 Hz 8.5 Transducer gain S e = ma, V CE = 8 V, Z S = Z L = 5, f = 9 MHz f =.8 Hz.5 ma = S / S (k(k ) / ) Jun7
4 SPICE Parameters (ummelpoon Model, BerkleySPICE. Syntax) : Transistor Chip Data IS = 8.75 fa VAF =. V NE =.5 VAR =.8 V NC =.95 RBM =.9 CJE =.58 ff TF =.88 ps ITF =.58 ma VJC =.77 V TR =. ns MJS = XTI = BF = 7. IKF =.95 A BR = 59 IKR =.59 A RB = 7. RE =.75 VJE =.79 V XTF =.89 PTF = deg MJC =.55 CJS = ff XTB = FC =.7595 NF =.9 ISE = 9. fa NR =.887 ISC =.78 fa IRB =.8 ma RC =.9 MJE =.57 VTF =.775 V CJC = 9.5 ff XCJC =. VJS =.75 V E =. ev TNOM K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies A by: Institut für Mobilund Satellitentechnik (IMST) Package Equivalent Circuit: L BI =.85 nh L BO =.5 nh L EI =.9 nh L EO =. nh L CI = nh L CO =.9 nh C BE = 7 ff C CB = 8 ff C CE = 5 ff Valid up to Hz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CDROM or see Internet: Jun7
5 Total power dissipation P tot = f (T S ) mw Ptot 5 T S C 5 T S Permissible Pulse Load R thjs = f (t p ) Permissible Pulse Load P totmax /P totdc = f (t p ) RthJS K/W D = Ptotmax / PtotDC D = s t p 7 5 s t p 5 Jun7
6 Collectorbase capacitance C cb = f (V CB ) f = MHz Transition frequency f T = f ( ) Ccb.5 pf V V CB ft. V Hz V V V ma Power ain ma, ms = f( ) f =.9Hz Power ain ma, ms = f( ) f =.8Hz V 5V V V 9 7 V 5V V V 5 8 V V.7V ma.7v ma Jun7
7 Power ain ma, ms = f(v CE ): f = Parameter S = f(v CE ): Intermodulation Intercept Point IP =f( ) (rd order, Output, Z S =Z L =5), f = 9MHz =ma.9hz m 8 8V 5V.9Hz V 8.8Hz IP V.8Hz 8 V 8 V V CE ma Power ain ma, ms = f(f) Power ain S = f(f) =ma =ma S 8 8 V V.7V Hz.5 V V.7V Hz.5 f f 7 Jun7
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