BAR64... BAR64-05 BAR64-05W BAR64-04 BAR64-04W BAR64-02LRH BAR64-02V BAR64-03W BAR64-06 BAR64-06W BAR64-07
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1 Silicon PIN Diode High voltage current controlled RF resistor for RF attenuator and switches Frequency range above MHz up to 6 GHz Very low capacitance at zero volt reverse bias at frequencies above GHz (typ..7 pf) Low forward resistance (typ.. ma) Very low signal distortion Pbfree (RoHS compliant) package Qualified according AEC Q ) BAR64LRH BAR64V BAR64W BAR644 BAR644W BAR645 BAR645W BAR646 BAR646W BAR647!!! "!,,,,,,,, Type Package Configuration L S (nh) Marking BAR64LRH* BAR64V BAR64W BAR644 BAR644W BAR645 BAR645W BAR646 BAR646W BAR647 TSLP7 SC79 SOD SOT SOT SOT SOT SOT SOT SOT4 *BAR64LRH is not qualified according AEC Q single, leadless single single series series common cathode common cathode common anode common anode parallel pair O O blue PPs PPs PRs PRs PSs PSs PTs 78
2 Maximum Ratings at T A = 5 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R 5 V Forward current I F ma Total power dissipation BAR64LRH, T S 5 C BAR64V, T S 5 C BAR64W, BAR647, T S 5 C BAR644, 5, 6, T S 65 C BAR644W, 5W, 6W, T S 5 C P tot mw Junction temperature T j 5 C Operating temperature range T op Storage temperature T stg Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) BAR64LRH BAR64V, 4W, 5W, 6W BAR64W BAR644, 5, 6 BAR647 R thjs Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Breakdown voltage V (BR) 5 V I (BR) = 5 µa Forward voltage I F = 5 ma V F. For calculation of R thja please refer to Application Note Thermal Resistance 78
3 Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Diode capacitance V R = V, f = MHz V R = V, f = MHz V R = V, f =...8 GHz, BAR64LRH V R = V, f =...8 GHz, all other Reverse parallel resistance V R = V, f = MHz V R = V, f = GHz V R = V, f =.8 GHz Forward resistance I F = ma, f = MHz I F = ma, f = MHz I F = ma, f = MHz Charge carrier life time I F = ma, I R = 6 ma, measured at I R = ma, R L = Ω C T R P r f pf....7 kω 4 Ω τ rr 55 ns Iregion width W I 5 µm Insertion loss ) I F = ma, f =.8 GHz I F = 5 ma, f =.8 GHz I F = ma, f =.8 GHz Isolation ) V R = V, f =.9 GHz V R = V, f =.8 GHz V R = V, f =.45 GHz V R = V, f = 5.6 GHz BAR64LRH in series configuration, Z = 5 Ω I L I SO db
4 Diode capacitance C T = ƒ (V R ) f = Parameter Reverse parallel resistance R P = ƒ(v R ) f = Parameter.7 4 KOhm CT pf Rp MHz GHz.8 GHz.4 MHz MHz GHz.8 GHz V V R V 4 V R Forward resistance r f = ƒ (I F ) f = MHz Forward current I F = ƒ (V F ) T A = Parameter Ohm A RF IF C 5 C 85 C 5 C ma I F V. V F 4 78
5 Intermodulation intercept point IP = ƒ (I F ); f = Parameter Forward current I F = ƒ (T S ) BAR64LRH ma f=9mhz f=8mhz 9 IP dbm IF ma I F 6 9 C 65 T S Forward current I F = ƒ (T S ) BAR64V Forward current I F = ƒ (T S ) BAR644, BAR645, BAR646 ma ma IF 7 IF C C 5 T S T S 5 78
6 Forward current I F = ƒ (T S ) BAR644W, BAR645W, BAR646W ma 9 8 IF C 5 T S Permissible Puls Load R thjs = ƒ (t p ) BAR64LRH Permissible Pulse Load I Fmax / I FDC = ƒ (t p ) BAR64LRH K/W RthJS D = IFmax/IFDC D = s t p s t p 6 78
7 Permissible Puls Load R thjs = ƒ (t p ) BAR64V Permissible Pulse Load I Fmax / I FDC = ƒ (t p ) BAR64V K/W RthJS D = IFmax / IFDC D = s t p s t p Permissible Puls Load R thjs = ƒ (t p ) BAR644, BAR645, BAR646 Permissible Pulse Load I Fmax / I FDC = ƒ (t p ) BAR644, BAR645, BAR646 K/W RthJS D = IFmax/IFDC D = s t P s t P 7 78
8 Permissible Puls Load R thjs = ƒ (t p ) BAR644W, BAR645W, BAR646W Permissible Pulse Load I Fmax / I FDC = ƒ (t p ) BAR644W, BAR645W, BAR646W K/W RthJS D = IFmax/IFDC D = s t P s t P Insertion loss I L = S = ƒ(f) I F = Parameter BAR64LRH in series configuration, Z = 5Ω Isolation I SO = S = ƒ(f) V R = Parameter BAR64LRH in series configuration, Z = 5Ω db ma db. S ma S. 5 ma 5. ma 5 V V V.4 4 GHz 6 f GHz 6.5 f 8 78
9 Package SC
10 Date Code marking for discrete packages with one digit (SCD8, SC79, SC75 ) ) CESCode Month a p A P a p A P a p A P b q B Q b q B Q b q B Q c r C R c r C R c r C R 4 d s D S d s D S d s D S 5 e t E T e t E T e t E T 6 f u F U f u F U f u F U 7 g v G V g v G V g v G V 8 h x H X h x H X h x H X 9 j y J Y j y J Y j y J Y k z K Z k z K Z k z K Z l L 4 l L 4 l L 4 n N 5 n N 5 n N 5 ) New Marking Layout for SC75, implemented at October
11 Package SOD 78
12 Package SOT4 Package Outline ± B M B.4 ± MIN. MAX M A ±.. MAX. MAX ±. A Foot Print Marking Layout (Example) RF s 56 Manufacturer 5, June Date code (YM) Pin BFP8 Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel Pin
13 Package SOT Package Outline +. ) ±..9 B C.95.4 ± MIN. MAX. ±.. MAX....8 MAX ±. A M BC. M A Foot Print ) Lead width can be.6 max. in dambar area Marking Layout (Example) EH s Manufacturer 5, June Date code (YM) Pin BCW66 Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel Pin
14 Package SOT Package Outline ± x. M. MAX...9 ±. A ±.. MIN ±.. M A Foot Print.6 Marking Layout (Example) Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel Manufacturer 5, June Date code (YM) Pin BCR8W Type code Pin
15 Package TSLP7 Package Outline Top view Bottom view.5 MAX..6 ±.5 Cathode marking.65 ±.5 ) Dimension applies to plated terminal ) ±.5 ) ±.5 ±.5 Foot Print For board assembly information please refer to Infineon website "Packages" Copper Solder mask Stencil apertures Marking Layout (Example) BAR9LRH Type code Cathode marking Laser marking Standard Packing Reel ø8 mm = 5. Pieces/Reel Reel ø mm = 5. Pieces/Reel (optional) Cathode marking
16 Edition 96 Published by Infineon Technologies AG 876 Munich, Germany 9 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (< Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 78
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