ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF998 BF998R 2=D 2=S 3=G2 3=G1

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BF99... Silicon N_Channel MOSFET Tetrode Shortchannel transistor with high S / C quality factor For lownoise, gaincontrolled input stage up to GHz Pbfree (RoHS compliant) package ) Qualified

1 BF99... Silicon N_Channel MOSFET Tetrode Shortchannel transistor with high S / C quality factor For lownoise, gaincontrolled input stage up to GHz Pbfree (RoHS compliant) package ) Qualified according AEC Q ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF99 BF99R SOT SOTR =S =D =D =S =G =G =G =G MOs MRs Maximum Ratings Parameter Symbol Value Unit Drainsource voltage V DS V Continuous drain current I D ma Gate / gate source current ±I G/SM Total power dissipation T S 7 C, BF99, BF99R P tot Storage temperature T stg... C Channel temperature T ch Thermal Resistance Parameter Symbol Value Unit Channel soldering point ), BF99, BF99R R thchs 7 K/W Pbcontaining package may be available upon special request For calculation of R thja please refer to Application Note Thermal Resistance 7

2 BF99... Electrical Characteristics at T A = C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drainsource breakdown voltage V (BR)DS V I D = µa, V GS = V, V GS = V Gate source breakdown voltage ±V (BR)GSS ±I GS = ma, V GS = V DS = Gate source breakdown voltage ±V (BR)GSS ±I GS = ma, V GS = V DS = Gate source leakage current ±I GSS na ±V GS = V, V GS = V DS = Gate source leakage current ±I GSS na ±V GS = V, V GS = V DS = Drain current I DSS 9 ma V DS = V, V GS =, V GS = V Gate source pinchoff voltage V GS(p).. V V DS = V, V GS = V, I D = µa Gate source pinchoff voltage V DS = V, V GS =, I D = µa V GS(p). 7

3 BF99... Electrical Characteristics at T A = C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Forward transconductance g fs V DS = V, I D = ma, V GS = V Gate input capacitance C gss.. pf V DS = V, I D = ma, V GS = V, f = MHz Gate input capacitance C gss. pf V DS = V, I D = ma, V GS = V, f = MHz Feedback capacitance C dg ff V DS = V, I D = ma, V GS = V, f = MHz Output capacitance V DS = V, I D = ma, V GS = V, f = MHz C dss. pf Power gain V DS = V, I D = ma, V GS = V, f = MHz V DS = V, I D = ma, V GS = V, f = MHz Noise figure V DS = V, I D = ma, V GS = V, f = MHz V DS = V, I D = ma, V GS = V, f = MHz Gain control range V DS = V, V GS =... V, f = MHz G p F.. G p 7

4 BF99... Total power dissipation P tot = ƒ(t S ) BF99, BF99R Output characteristics I D = ƒ(v DS ) V GS = V V GS = Parameter mw ma.v.v Ptot ID V.V.V 7 9 C T S Gate forward transconductance g fs = ƒ(i D ) V DS = V, V GS = Parameter V V DS Gate forward transconductance g fs = ƒ (V GS ) ms V ms V V V gfs Gfs V V V V ma I D.7... V.7 V GS 7

5 BF99... Drain current I D = ƒ(v GS ) Power gain G ps = ƒ (V GS ) V DS = V f = MHz V GS = Parameter ma V V ID V Gps V V V GS Noise figure F = ƒ (V GS ) f = MHz V V GS Noise figure F = ƒ (V GS ) f = MHz 7 F F V V GS V V GS 7

6 BF99... Power gain G ps = ƒ (V GS ) f = MHz Gate input capacitance C gss = ƒ (V GS ). pf. Gps Cgss.... V V GS..... V. V GS Output capacitance C dss = ƒ(v DS ) pf Cdss... V V DS 7

7 Package SOT BF99... Package Outline ±..9.7 B M B. ±.. MIN. MAX..... M A ±.. MAX. MAX..... ±. A Foot Print Marking Layout (Example) RF s Manufacturer, June Date code (YM) Pin BFP Type code Standard Packing Reel ø mm =. Pieces/Reel Reel ø mm =. Pieces/Reel.. Pin.. 7 7

8 Package SOTR BF99... Package Outline ± B ±.. MIN. MAX.... ±.. MAX. Foot Print MAX.. ±..9 A. M B... Marking Layout (Example) Reverse bar, June Date code (YM) Standard Packing Reel ø mm =. Pieces/Reel Reel ø mm =. Pieces/Reel Pin BFPR Type code... M A... Manufacturer Pin.. 7

9 BF99... Edition Published by Infineon Technologies AG 7 München, Germany Infineon Technologies AG 7. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 7

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

NPN Silicon RF Transistor For broadband amplifiers up to GHz at collector currents from ma to ma Pbfree (RoHS compliant) package ) Qualified according AEC Q ESD (Electrostatic discharge) sensitive device,