DATA SHEET. PRF957 UHF wideband transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Mar 01.
|
|
- Russell Joseph
- 5 years ago
- Views:
Transcription
1 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D1 Supersedes data of 1999 Mar Jul 3
2 FEATURES PINNING Small size Low noise Low distortion High gain Gold metallization ensures excellent reliability. PIN 1 base emitter 3 collector DESCRIPTION APPLICATIONS 3 Communication and instrumentation systems. 3 DESCRIPTION 1 Silicon NPN transistor in a surface mount 3-pin SOT33 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. 1 Top view Marking code: W. MAM6 Fig.1 Simplified outline (SOT33) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT C re feedback capacitance I C = ; V CB =6V; f=1mhz.4 pf f T transition frequency I C = 3 ma; V CE =6V; f m = 1 GHz 8.5 GHz maximum unilateral power gain I C = 3 ma; V CE =6V; 15 db T amb =5 C; f = 1 GHz NF noise figure Γ S = Γ opt ; I C = 5 ma; V CE =6V; 1.3 db f = 1 GHz P tot total power dissipation T s =6 C; note 1 7 mw R th j-s thermal resistance from junction to soldering point P tot = 7 mw 45 K/W Note 1. T s is the temperature at the soldering point of the collector pin Jul 3
3 LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 134. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter V V CEO collector-emitter voltage open base 1 V V EBO emitter-base voltage open collector 1.5 V I C DC collector current 1 ma I C(AV) average collector current 1 ma P tot total power dissipation T s =6 C; note 1 7 mw T stg storage temperature C T j junction temperature 175 C Note 1. T s is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction P tot = 7 mw; T s =6 C; note 1 45 K/W to soldering point Note 1. T s is the temperature at the soldering point of the collector pin Jul 3 3
4 CHARACTERISTICS T j =5 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics V (BR)CBO collector-base breakdown voltage I C = 1 µa; I E = V V (BR)CEO collector-emitter breakdown I C = 1 µa; I B = 1 V voltage V (BR)EBO emitter-base breakdown voltage I E =1µA; I C = 1.5 V I CBO collector-base leakage current V CB = 1 V; I E = 1 na I EBO emitter-base leakage current V EB =1V; I C = 1 na h FE DC current gain I C = 5 ma; V CE = 6 V 5 1 I C = 15 ma; V CE =6V 1 AC characteristics C re feedback capacitance I C = ; V CB = 6 V; f = 1 MHz.4 pf f T transition frequency I C = 3 ma; V CE =6V; f m = 1 GHz 8.5 GHz s 1 insertion gain I C = 3 ma; V CE =6V; f=1ghz 14 db maximum unilateral power gain; note 1 I C = 3 ma; V CE =6V; T amb =5 C; f = 1 GHz I C = 3 ma; V CE =6V; T amb =5 C; f = GHz NF noise figure Γ S = Γ opt ; I C = 5 ma; V CE =6V; f = 1 GHz Γ S = Γ opt ; I C = 5 ma; V CE =6V; f = GHz 15 db 9. db 1.3 db 1.8 db Note 1. is the maximum unilateral power gain, assuming s 1 is zero. = 1 s 1 log ( 1 s 11 )( 1 s ) db 1999 Jul 3 4
5 4 P tot (mw) MGS51 1 h FE MGS Ts ( C) I C (ma) V CE =6V. Fig. Power derating as a function of soldering point temperature. Fig.3 DC current gain as a function of collector current; typical values..8 C re (pf).6 MGS514 1 f T (GHz) 8 MGS V CB (V) I C (ma) I C = ; f = 1 MHz. V CE = 6 V; f m = 1 GHz; T amb =5 C. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. Fig.5 Transition frequency as a function of collector current; typical values Jul 3 5
6 gain 16 MSG G max MGS516 5 gain 4 MGS MSG 4 1 G max I C (ma) f (MHz) 1 4 f = 1 GHz; V CE =6V. I C = 5 ma; V CE =6V. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of frequency; typical values. 5 gain MGS518 5 gain MGS MSG MSG G max G max f (MHz) f (MHz) 1 4 I C = 15 ma; V CE =6V. I C = 3 ma; V CE =6V. Fig.8 Gain as a function of frequency; typical values. Fig.9 Gain as a function of frequency; typical values Jul 3 6
7 4 NF MGS5 4 NF MGS (1) (1) () (3) () (3) (4) (5) 1 (6) I C (ma) f (MHz) 1 4 V CE =6V. (1) f = GHz () f = 1.5 GHz (3) f = 1 GHz (4) f = 9 MHz (5) f = 8 MHz (6) f = 5 MHz. V CE =6V. (1) I C =3mA () I C =15mA (3) I C = 5 ma. Fig.1 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of frequency; typical values Jul 3 7
8 handbook, full pagewidth unstable region source 9 +1 unstable region load Γopt (1) (4) () (5) (6) (3) f = 1 GHz; V CE = 6 V; I C = 5 ma; Z o =5Ω. (1) G = 16 db () G = 15 db (3) G = 14 db (4) NF = 1.3 db (5) NF = 1.5 db (6) NF = 1.7 db MGS5 1. Fig.1 Common emitter available gain, noise and stability circles; typical values. handbook, full pagewidth unstable region source 9 +1 unstable region load f = GHz; V CE = 6 V; I C = 5 ma; Z o =5Ω. (1) G max = 9.95 db () G=9dB (3) G=8dB (4) G=7dB (5) NF = 1.8 db (6) NF = db (7) NF =. db (1) Γopt (5) (7) (6). () 5 (3) (4) MGS53 1. Fig.13 Common emitter available gain, noise and stability circles; typical values Jul 3 8
9 APPLICATION INFORMATION SPICE parameters for the die SEQUENCE No. PARAMETER VALUE UNIT 1 IS.963 fa BF NF 1. 4 VAF V 5 IKF ma 6 ISE fa 7 NE BR NR 1. 1 VAR V 11 IKR 5.77 ma 1 ISC aa 13 NC RB 6.71 Ω 15 IRB. µa 16 RBM.478 Ω 17 RE.164 Ω 18 RC Ω 19 (1) XTB. (1) EG 1.11 ev 1 (1) XTI 3. CJE pf 3 VJE 6. mv 4 MJE TF 3.73 ps 6 XTF VTF V 8 ITF ma 9 PTF. deg 3 CJC 49.9 ff 31 VJC 87.1 mv 3 MJC XCJC TR. ps 35 (1) CJS. F 36 (1) VJS 7. mv 37 (1) MJS. SEQUENCE No. PARAMETER VALUE UNIT 38 FC () C bpb 73. ff 4 () C bpe 131. ff Notes 1. These parameters have not been extracted, the default values are shown.. C bpb, C bpe : base-bondpad and emitter-bondpad capacitance to collector. B L1 Cbe L B QL B = 5; QL E = 5; QL B (f) = QL B (f/f c ); QL E (f) = QL E (f/f c ); f c = corner frequency = 1 GHz. Fig.14 Package equivalent circuit SOT33. List of components (see Fig.14) B' Ccb MBC964 DESIGNATION VALUE UNIT C be ff C cb 1 ff C ce 1 ff L1.34 nh L.1 nh L3.34 nh L B.6 nh L E.6 nh E' E C' L E L3 L Cce C 1999 Jul 3 9
10 handbook, full pagewidth GHz GHz GHz 5 MHz MHz 1 MHz MGS54 1. V CE = 6 V; I C = 3 ma; Z o =5Ω. Fig.15 Common emitter input reflection coefficient (s 11 ); typical values. handbook, full pagewidth MHz MHz MHz 1 GHz GHz 3 GHz MGS55 V CE = 6 V; I C =3mA. Fig.16 Common emitter forward transmission coefficient (s 1 ); typical values Jul 3 1
11 分销商库存信息 : NXP,115
BFR93A. NPN Silicon RF Transistor. For low-noise, high-gain broadband amplifiers at collector currents from 2 ma to 30 ma
NPN Silicon RF Transistor For lownoise, highgain broadband amplifiers at collector currents from ma to ma VPS5 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFQ67W NPN 8 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC4 September 99 FEATURES PINNING High power gain Low noise figure High transition frequency Gold metallization ensures excellent
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFS520 NPN 9 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET BFS File under Discrete Semiconductors, SC4 September 99 BFS FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent
More informationBFP193. NPN Silicon RF Transistor*
NPN Silicon RF Transistor* For low noise, highgain amplifiers up to GHz For linear broadband amplifiers f T = 8 GHz, F = db at 900 MHz * Short term description ESD (Electrostatic discharge) sensitive device,
More informationBFP196W. NPN Silicon RF Transistor*
NPN Silicon RF Transistor* For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 ma to 80 ma Power amplifier for DECT
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFG541 NPN 9 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET BFG4 File under Discrete Semiconductors, SC4 September 99 BFG4 FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent
More informationType Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23
NPN Silicon RF Transistor* For broadband amplifiers up to GHz and fast nonsaturated switches at collector currents from 0.5 ma to 0 ma Complementary type: BFT9 (PNP) * Short term description ESD (Electrostatic
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR183W RHs 1=B 2=E 3=C SOT323
NPN Silicon RF Transistor* For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 8 GHz, F = 0.9 db at 900 MHz Pbfree (RoHS compliant) package ) Qualified according AEC
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR181 RFs 1=B 2=E 3=C SOT23
NPN Silicon RF Transistor* For low noise, highgain broadband amplifiers at collector currents from 0.5 ma to ma f T = 8 GHz, F = 0.9 db at 900 MHz Pbfree (RoHS compliant) package ) Qualified according
More informationBFP193. NPN Silicon RF Transistor* For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers f T = 8 GHz, F = 1 db at 900 MHz
NPN Silicon RF Transistor* For low noise, highgain amplifiers up to GHz For linear broadband amplifiers f T = 8 GHz, F = db at 900 MHz Pbfree (RoHS compliant) package ) Qualified according AEC Q * Short
More informationBFP196W. NPN Silicon RF Transistor*
NPN Silicon RF Transistor* For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 ma to 80 ma Power amplifier for DECT
More informationDATA SHEET. BFG31 PNP 5 GHz wideband transistor DISCRETE SEMICONDUCTORS Sep 12
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of November 199 File under Discrete Semiconductors, SC14 1995 Sep 1 FEATURES High output voltage capability High gain bandwidth product Good thermal stability
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFR106 NPN 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 September 1995 DESCRIPTION PINNING NPN silicon planar epitaxial transistor in a plastic SOT3 envelope. It is primarily intended
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFQ19 NPN 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 September 1995 DESCRIPTION PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film
More informationDATA SHEET. BFQ226 NPN video transistor DISCRETE SEMICONDUCTORS Sep 04
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1996 July 18 File under Discrete Semiconductors, SC5 1996 Sep 4 APPLICATIONS Primarily intended for cascode output and buffer stages in high resolution
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFT93W PNP 4 GHz wideband transistor. Product specification Supersedes data of November 1992
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data o November 199 March 1994 FEATURES High power gain Gold metallization ensures excellent reliability SOT33 (S-mini) package. APPLICATIONS It is intended
More informationDATA SHEET. BFQ225 NPN video transistor DISCRETE SEMICONDUCTORS Sep 04
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1996 July 18 File under Discrete Semiconductors, SC5 1996 Sep 4 APPLICATIONS Primarily intended for cascode output and buffer stages in high resolution
More informationDATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
More informationType Marking Pin Configuration Package BGA427 BMs 1, IN 2, GND 3, +V 4, Out SOT343. Maximum Ratings Parameter Symbol Value Unit Device current I D
BGA7 SiMMICAmplifier in SIEGET Technologie Cascadable 0 Ωgain block Unconditionally stable Gain S = 8. db at.8 GHz (Appl.) gain S = db at.8 GHz (Appl.) IP out = +7 dbm at.8 GHz (V D =V, I D =9.mA) Noise
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFQ149 PNP 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 September 1995 DESCRIPTION PINNING PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BLU86 UHF power transistor
DISCRETE SEMICONDUCTORS DATA SHEET September 1991 FEATURES SMD encapsulation Emitter-ballasting resistors for optimum temperature profile Gold metallization ensures excellent reliability. DESCRIPTION NPN
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFS17 NPN 1 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DT SHEET File under Discrete Semiconductors, SC14 September 1995 DESCRIPTION NPN transistor in a plastic SOT23 package. PPLICTIONS wide range of RF applications such as: Mixers
More informationPNP power transistor
FEATURES High current (max. 3 A) Low voltage (max. 45 V). APPLICATIONS General purpose power applications. PINNING PIN DESCRIPTION 1 emitter 2 collector, connected to metal part of mounting surface 3 base
More informationFEATURES Internal matching for an optimum wideband capability and high gain Emitter-ballasting resistors for optimum temperature profile Gold
E-MAIL: DISCRETE SEMICONDUCTORS DATA SHEET March 1993 E-MAIL: FEATURES Internal matching for an optimum wideband capability and high gain Emitter-ballasting resistors for optimum temperature profile Gold
More informationCOMPLEMENTARY NPN/PNP TRANSISTOR
SEMICONDUCTOR DATA SHEET COMPLEMENTARY NPN/PNP TRANSISTOR FEATURES Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BLT92/SL UHF power transistor
DISCRETE SEMICONDUCTORS DATA SHEET May 1989 DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 9 MHz communications band. This device has been
More informationFEATURES PIN CONFIGURATION Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. h
E-MAIL: DISCRETE SEMICONDUCTORS DATA SHEET September 1991 E-MAIL: FEATURES PIN CONFIGURATION Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability.
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BLU99 BLU99/SL UHF power transistor
DISCRETE SEMICONDUCTORS DATA SHEET /SL March 1993 /SL DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is
More informationBFS17/BFS17R/BFS17W. Silicon NPN Planar RF Transistor. Vishay Telefunken. Applications. Features
Silicon NPN Planar RF Transistor BFS17/BFS17R/BFS17W Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features High power gain SMD-package
More informationDATA SHEET. PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors Supersedes data of April 995 File under Discrete Semiconductors, SC7 996 Sep FEATURES Low noise Interchangeability of drain
More informationParameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm 3 R thja 450 K/W plated with 35m Cu
Silicon NPN Planar RF Transistor BFR92 Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features High
More informationDATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D86 Supersedes data of 2003 Dec 0 2004 Nov 05 FEATURES High current. APPLICATIONS Linear voltage regulators Low side switch Supply line switch for negative
More informationType Marking Pin Configuration Package BCX42 BSS63 1 = B 1 = B 2 = E 2 = E
, PNP Silicon AF an Swiching Transistors For general AF applications High breakdown voltage Low collectoremitter saturation voltage Complementary types: BCX4, BSS64 (NPN) VPS6 Type Marking Pin Configuration
More informationParameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35m Cu
Silicon NPN Planar RF Transistor BFR96TS Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features
More informationDATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 23 Nov 2 24 Nov 5 FEATURES High current Two current gain selections. APPLICATIONS Linear voltage regulators High side switches
More informationBipolar Junction Transistor (BJT) Model. Model Kind. Model Sub-Kind. SPICE Prefix. SPICE Netlist Template Format
Bipolar Junction Transistor (BJT) Model Old Content - visit altiumcom/documentation Modified by Admin on Sep 13, 2017 Model Kind Transistor Model Sub-Kind BJT SPICE Prefix Q SPICE Netlist Template Format
More informationRF amplifier up to GHz range specially for wide band antenna amplifier.
Silicon NPN Planar RF Transistor BFR91 Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features High
More informationRF amplifier up to GHz range specially for wide band antenna amplifier.
Silicon NPN Planar RF Transistor BFR91A Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features High
More informationDATA SHEET. BCP69 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Nov 15.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 Supersedes data of 2002 Nov 15 2003 Nov 25 FEATURES High current Three current gain selections 1.4 W total power dissipation. APPLICATIONS Linear
More informationDATA SHEET. BF908WR N-channel dual-gate MOS-FET. Philips Semiconductors DISCRETE SEMICONDUCTORS Apr 25
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC7 1995 Apr 25 Philips Semiconductors FEATURES High forward transfer admittance Short channel transistor with high forward transfer
More informationDATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 Supersedes data of 1999 Apr 12 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
More informationDISCRETE SEMICONDUCTORS DATA SHEET. PMBT3906 PNP switching transistor. Product specification Supersedes data of 1999 Apr 27.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1999 Apr 27 2004 Jan 21 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS General amplification
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BLW33 UHF linear power transistor
DISCRETE SEMICONDUCTORS DATA SHEET August 1986 DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers.
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BLW96 HF/VHF power transistor
DISCRETE SEMICONDUCTORS DATA SHEET August 1986 DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-a, AB and B operated high power industrial and military transmitting equipment
More informationDATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 23
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D12 Supersedes data of 1999 Apr 23 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
More informationDATA SHEET. PEMD48; PUMD48 NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω Supersedes data of 2004 Jun 02 2004 Jun 24 FEATURES Built-in bias resistors
More informationBCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C
PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω, R = kω ) For 6PIN packages: two (galvanic) internal isolated transistors with
More informationPb-free (RoHS compliant) package Qualified according AEC Q101 C1 (2) Type Marking Pin Configuration Package BCV62A BCV62B BCV62C 2 = C1 2 = C1 2 = C1
PNP Silicon Double Transistor To be used as a current mirror Good thermal coupling and V BE matching High current gain Low collector-emitter saturation voltage 1 2 Pb-free (RoHS compliant) package Qualified
More informationBFS483. Low Noise Silicon Bipolar RF Transistor
Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 30 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz Two (galvanic) internal isolated Transistor
More informationDATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN/PNP general purpose transistor Supersedes data of 2002 Aug 09 2002 Nov 22 FEATURES High current (500 ma) 600 mw total power dissipation Replaces
More informationDISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D32 PBSS424DPN 4 V low V CEsat NPN/PNP transistor 23 Feb 2 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability
More information65 V, 100 ma NPN/PNP general-purpose transistor. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Nexperia JEITA
Rev. 1 17 July 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview
More informationDATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14.
DISCRETE SEMICONDUCTORS DATA SHEET age M3D087 PBSS4540Z 40 V low V CEsat NPN transistor Supersedes data of 2001 Jul 24 2001 Nov 14 FEATURES Low collector-emitter saturation voltage High current capabilities
More informationDATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 22 Feb 4 24 Feb 6 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN 1
More informationBFS469L6. World's smallest SMD 6-pin leadless package Built in 2 transitors (TR1: die as BFR460L3, TR2: die as BFR949L3)
NPN Silicon RF TWIN Transistor Preliminary data Low voltage/ low current applications Ideal for VCO modules and low noise amplifiers Low noise figure: :.db at.8 GHz :. db at.8 GHz 6 4 3 2 World's smallest
More informationC1 (2) C2 (1) E1 (3) E2 (4) Type Marking Pin Configuration Package BCV61B BCV61C 2 = C1 2 = C1 1 = C2 1 = C2
NPN Silicon Double Transistor To be used as a current mirror Good thermal coupling and V BE matching High current gain Low collectoremitter saturation voltage C1 (2) C2 (1) 2 Tr.1 Tr.2 1 VPS05178 E1 ()
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BLW90 UHF power transistor
DISCRETE SEMICONDUCTORS DATA SHEET August 1986 DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-a, B or C in the u.h.f. and v.h.f. range for a nominal
More informationDATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D09 Supersedes data of 2004 Aug 5 2004 Oct 25 FEATURES High h FE and low V CEsat at high current operation High collector current capability: I C maximum
More informationType Marking Pin Configuration Package BFR183 RHs 1=B 2=E 3=C SOT23
Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 30 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz Pbfree (RoHS compliant) package Qualification
More informationDATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors Supersedes data of April 995 File under Discrete Semiconductors, SC7 996 Jul FEATURES Interchangeability of drain and source
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BLY87C VHF power transistor
DISCRETE SEMICONDUCTORS DATA SHEET August 1986 DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-a, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply
More informationType Marking Pin Configuration Package BFR93A R2s 1=B 2=E 3=C SOT23
NPN Silicon RF Transistor For lownoise, high gain broadband amplifiers at collector currents from ma to 0 ma Pbfree (RoHS compliant) package ESD (Electrostatic discharge) sensitive device, observe handling
More informationDATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13.
DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PBSS5350D 50 V low V CEsat PNP transistor Supersedes data of 2001 Jul 13 2001 Nov 13 FEATURES Low collector-emitter saturation voltage High current capability
More informationDATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN transistor/schottky diode module Supersedes data of 2002 Oct 28 2003 Jul 04 FEATURES 600 mw total power dissipation High current capability
More informationParameter Test condition Symbol Value Unit Junction ambient 1) R thja 300 K/W
Silicon NPN Planar RF Transistor Features High power gain Low noise figure Lead (Pb)-free component Component in accordance to RoHS 00/95/EC and WEEE 00/96/EC e E B C Applications RF amplifier up to GHz
More informationType Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323
Low Noise Silicon Bipolar RF Transistor For low distortion amplifiers and oscillators up to GHz at collector currents from 5 ma to 30 ma 3 Pbfree (RoHS compliant) and halogenfree package with visible leads
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationNPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device
More informationDATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 27 2004 Oct 11 FEATURES Low current (max. 200 ma) Low voltage (max. 15 V). APPLICATIONS High-speed switching. PINNING
More informationType Marking Pin Configuration Package BFQ19S FG 1 = B 2 = C 3 = E SOT89
Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to.5 GHz at collector currents from 0 ma to 70 ma Pbfree (RoHS compliant)
More informationBCM857BV; BCM857BS; BCM857DS
BCM857BV; BCM857BS; BCM857DS Rev. 05 27 June 2006 Product data sheet 1. Product profile 1.1 General description in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationType Marking Pin Configuration Package BCX42 DKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO
PNP Silicon AF and Switching Transistor For general AF applications High breakdown voltage Low collectoremitter saturation voltage Complementary type: BCX4 (NPN) Pbfree (RoHS compliant) package Qualified
More informationType Marking Pin Configuration Package BFN24 BFN26 1=B 1=B
BFN4, BFN6 NPN Silicon HighVoltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collectoremitter saturation voltage Complementary type:
More informationType Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323
NPN Silicon RF Transistor For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 ma to 30 ma 3 1 2 Pbfree (RoHS compliant) package Qualified according AEC Q1 ESD (Electrostatic
More informationGeneral Purpose Transistors
General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 33/SC which is designed for low power surface mount
More informationDATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationType Marking Pin Configuration Package BCM846S 1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
NPN Silicon AF Transistor Array Precision matched transistor pair: I C % For current mirror applications Low collectoremitter saturation voltage Two (galvanic) internal isolated Transistors Complementary
More informationDISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 NPN transistor/schottky-diode module 2003 Nov 0 FEATURES 600 mw total power dissipation High current capability Reduces required PCB area Reduced
More informationDATA SHEET. BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junction field-effect transistors DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 FEATURES Interchangeability of drain and source connections High I DSS range Frequency
More informationNPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)
More informationType Marking Pin Configuration Package BFR182W RGs 1=B 2=E 3=C SOT323
Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz 3 Pbfree (RoHS compliant) and halogenfree
More informationDATA SHEET. PBSS4250X 50 V, 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 17
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D9 Supersedes data of 2003 Jun 17 2004 Nov 08 FEATURES SOT89 (SC-62) package Low collector-emitter saturation voltage V CEsat High collector current
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BLW80 UHF power transistor
DISCRETE SEMICONDUCTORS DATA SHEET BLW8 March 1993 BLW8 DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-a, B or C in the u.h.f. and v.h.f. range for
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationDATA SHEET. BAT54W series Schottky barrier (double) diodes DISCRETE SEMICONDUCTORS Mar 19. Product specification Supersedes data of October 1993
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MD088 Supersedes data of October 199 1996 Mar 19 FEATURES Low forward voltage Guard ring protected Very small SMD package. APPLICATIONS Ultra high-speed
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationType Marking Pin Configuration Package BFN38 BFN38 1=B 2=C 3=E 4=C - - SOT223
NPN Silicon HighVoltage Transistors Suitable for video output stages TV sets and switching power supplies High breakdown voltage 2 Low collectoremitter saturation voltage Complementary type: BFN9 (PNP)
More informationBIPOLAR JUNCTION TRANSISTOR MODELING
BIPOLAR JUNCTION TRANSISTOR MODELING Introduction Operating Modes of the Bipolar Transistor The Equivalent Schematic and the Formulas of the SPICE Gummel-Poon Model A Listing of the Gummel-Poon Parameters
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor For broadband amplifiers up to GHz at collector currents from ma to ma Pbfree (RoHS compliant) package ) Qualified according AEC Q ESD (Electrostatic discharge) sensitive device,
More informationBFG403W NPN 17 GHz wideband transistor
DISCRETE SEMICONDUCTORS BFG43W Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 1998 Mar 11 BFG43W FEATURES Low current Very high power gain Low noise figure High transition frequency
More information150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor
Rev. 0 November 2009 Product data sheet. Product profile. General description NPN high-voltage low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor* For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 9 GHz, F = db at GHz Pbfree (RoHS compliant) package ) Qualified according AEC Q0 * Short
More information2N3904 SMALL SIGNAL NPN TRANSISTOR
SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment TO-92 / Bulk -AP TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BLF246 VHF power MOS transistor Oct 21. Product specification Supersedes data of September 1992
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of September 1992 1996 Oct 21 FEATURES High power gain Low noise figure Easy power control Good thermal stability Withstands full load mismatch. PINNING
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More information