DATA SHEET. PRF957 UHF wideband transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Mar 01.

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1 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D1 Supersedes data of 1999 Mar Jul 3

2 FEATURES PINNING Small size Low noise Low distortion High gain Gold metallization ensures excellent reliability. PIN 1 base emitter 3 collector DESCRIPTION APPLICATIONS 3 Communication and instrumentation systems. 3 DESCRIPTION 1 Silicon NPN transistor in a surface mount 3-pin SOT33 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. 1 Top view Marking code: W. MAM6 Fig.1 Simplified outline (SOT33) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT C re feedback capacitance I C = ; V CB =6V; f=1mhz.4 pf f T transition frequency I C = 3 ma; V CE =6V; f m = 1 GHz 8.5 GHz maximum unilateral power gain I C = 3 ma; V CE =6V; 15 db T amb =5 C; f = 1 GHz NF noise figure Γ S = Γ opt ; I C = 5 ma; V CE =6V; 1.3 db f = 1 GHz P tot total power dissipation T s =6 C; note 1 7 mw R th j-s thermal resistance from junction to soldering point P tot = 7 mw 45 K/W Note 1. T s is the temperature at the soldering point of the collector pin Jul 3

3 LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 134. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter V V CEO collector-emitter voltage open base 1 V V EBO emitter-base voltage open collector 1.5 V I C DC collector current 1 ma I C(AV) average collector current 1 ma P tot total power dissipation T s =6 C; note 1 7 mw T stg storage temperature C T j junction temperature 175 C Note 1. T s is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction P tot = 7 mw; T s =6 C; note 1 45 K/W to soldering point Note 1. T s is the temperature at the soldering point of the collector pin Jul 3 3

4 CHARACTERISTICS T j =5 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics V (BR)CBO collector-base breakdown voltage I C = 1 µa; I E = V V (BR)CEO collector-emitter breakdown I C = 1 µa; I B = 1 V voltage V (BR)EBO emitter-base breakdown voltage I E =1µA; I C = 1.5 V I CBO collector-base leakage current V CB = 1 V; I E = 1 na I EBO emitter-base leakage current V EB =1V; I C = 1 na h FE DC current gain I C = 5 ma; V CE = 6 V 5 1 I C = 15 ma; V CE =6V 1 AC characteristics C re feedback capacitance I C = ; V CB = 6 V; f = 1 MHz.4 pf f T transition frequency I C = 3 ma; V CE =6V; f m = 1 GHz 8.5 GHz s 1 insertion gain I C = 3 ma; V CE =6V; f=1ghz 14 db maximum unilateral power gain; note 1 I C = 3 ma; V CE =6V; T amb =5 C; f = 1 GHz I C = 3 ma; V CE =6V; T amb =5 C; f = GHz NF noise figure Γ S = Γ opt ; I C = 5 ma; V CE =6V; f = 1 GHz Γ S = Γ opt ; I C = 5 ma; V CE =6V; f = GHz 15 db 9. db 1.3 db 1.8 db Note 1. is the maximum unilateral power gain, assuming s 1 is zero. = 1 s 1 log ( 1 s 11 )( 1 s ) db 1999 Jul 3 4

5 4 P tot (mw) MGS51 1 h FE MGS Ts ( C) I C (ma) V CE =6V. Fig. Power derating as a function of soldering point temperature. Fig.3 DC current gain as a function of collector current; typical values..8 C re (pf).6 MGS514 1 f T (GHz) 8 MGS V CB (V) I C (ma) I C = ; f = 1 MHz. V CE = 6 V; f m = 1 GHz; T amb =5 C. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. Fig.5 Transition frequency as a function of collector current; typical values Jul 3 5

6 gain 16 MSG G max MGS516 5 gain 4 MGS MSG 4 1 G max I C (ma) f (MHz) 1 4 f = 1 GHz; V CE =6V. I C = 5 ma; V CE =6V. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of frequency; typical values. 5 gain MGS518 5 gain MGS MSG MSG G max G max f (MHz) f (MHz) 1 4 I C = 15 ma; V CE =6V. I C = 3 ma; V CE =6V. Fig.8 Gain as a function of frequency; typical values. Fig.9 Gain as a function of frequency; typical values Jul 3 6

7 4 NF MGS5 4 NF MGS (1) (1) () (3) () (3) (4) (5) 1 (6) I C (ma) f (MHz) 1 4 V CE =6V. (1) f = GHz () f = 1.5 GHz (3) f = 1 GHz (4) f = 9 MHz (5) f = 8 MHz (6) f = 5 MHz. V CE =6V. (1) I C =3mA () I C =15mA (3) I C = 5 ma. Fig.1 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of frequency; typical values Jul 3 7

8 handbook, full pagewidth unstable region source 9 +1 unstable region load Γopt (1) (4) () (5) (6) (3) f = 1 GHz; V CE = 6 V; I C = 5 ma; Z o =5Ω. (1) G = 16 db () G = 15 db (3) G = 14 db (4) NF = 1.3 db (5) NF = 1.5 db (6) NF = 1.7 db MGS5 1. Fig.1 Common emitter available gain, noise and stability circles; typical values. handbook, full pagewidth unstable region source 9 +1 unstable region load f = GHz; V CE = 6 V; I C = 5 ma; Z o =5Ω. (1) G max = 9.95 db () G=9dB (3) G=8dB (4) G=7dB (5) NF = 1.8 db (6) NF = db (7) NF =. db (1) Γopt (5) (7) (6). () 5 (3) (4) MGS53 1. Fig.13 Common emitter available gain, noise and stability circles; typical values Jul 3 8

9 APPLICATION INFORMATION SPICE parameters for the die SEQUENCE No. PARAMETER VALUE UNIT 1 IS.963 fa BF NF 1. 4 VAF V 5 IKF ma 6 ISE fa 7 NE BR NR 1. 1 VAR V 11 IKR 5.77 ma 1 ISC aa 13 NC RB 6.71 Ω 15 IRB. µa 16 RBM.478 Ω 17 RE.164 Ω 18 RC Ω 19 (1) XTB. (1) EG 1.11 ev 1 (1) XTI 3. CJE pf 3 VJE 6. mv 4 MJE TF 3.73 ps 6 XTF VTF V 8 ITF ma 9 PTF. deg 3 CJC 49.9 ff 31 VJC 87.1 mv 3 MJC XCJC TR. ps 35 (1) CJS. F 36 (1) VJS 7. mv 37 (1) MJS. SEQUENCE No. PARAMETER VALUE UNIT 38 FC () C bpb 73. ff 4 () C bpe 131. ff Notes 1. These parameters have not been extracted, the default values are shown.. C bpb, C bpe : base-bondpad and emitter-bondpad capacitance to collector. B L1 Cbe L B QL B = 5; QL E = 5; QL B (f) = QL B (f/f c ); QL E (f) = QL E (f/f c ); f c = corner frequency = 1 GHz. Fig.14 Package equivalent circuit SOT33. List of components (see Fig.14) B' Ccb MBC964 DESIGNATION VALUE UNIT C be ff C cb 1 ff C ce 1 ff L1.34 nh L.1 nh L3.34 nh L B.6 nh L E.6 nh E' E C' L E L3 L Cce C 1999 Jul 3 9

10 handbook, full pagewidth GHz GHz GHz 5 MHz MHz 1 MHz MGS54 1. V CE = 6 V; I C = 3 ma; Z o =5Ω. Fig.15 Common emitter input reflection coefficient (s 11 ); typical values. handbook, full pagewidth MHz MHz MHz 1 GHz GHz 3 GHz MGS55 V CE = 6 V; I C =3mA. Fig.16 Common emitter forward transmission coefficient (s 1 ); typical values Jul 3 1

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