SOT-23 Mark: 1A. = 25 C unless otherwise noted T A. Symbol Parameter Value Units

Transcription

1 B E N39 TO-9 MMBT39 SOT-3 Mark: A B E PZT39 B SOT-3 E N39 / MMBT39 / PZT39 This device is designed as a general purpse amplifier and switch. The useful dynamic range extends t ma as a switch and t MHz as an amplifier. Abslute Maximum Ratings* T A = unless therwise nted Symbl Parameter alue Units EO llectr-emitter ltage BO llectr-base ltage 6 EBO Emitter-Base ltage 6. I llectr urrent - ntinuus ma T J, T stg Operating and Strage Junctin Temperature Range - t + *These ratings are limiting values abve which the serviceability f any semicnductr device may be impaired. NOTES: ) These ratings are based n a maximum junctin temperature f degrees. ) These are steady state limits. The factry shuld be cnsulted n applicatins invlving pulsed r lw duty cycle peratins. Thermal haracteristics T A = unless therwise nted Symbl haracteristic Max Units N39 *MMBT39 **PZT39 P D Ttal Device Dissipatin Derate abve , 8. mw mw/ R θj Thermal Resistance, Junctin t ase 83.3 /W R θja Thermal Resistance, Junctin t Ambient 37 /W *Device munted n FR- PB.6" X.6" X.6." **Device munted n FR- PB 36 mm X 8 mm X. mm; munting pad fr the cllectr lead min. 6 cm. Fairchild Semicnductr rpratin N39/MMBT39/PZT39, Rev A

2 Electrical haracteristics T A = unless therwise nted Symbl Parameter Test nditins Min Max Units OFF HARATERISTIS (BR)EO llectr-emitter Breakdwn I =. ma, I B = ltage (BR)BO llectr-base Breakdwn ltage I = µa, I E = 6 (BR)EBO Emitter-Base Breakdwn ltage I E = µa, I = 6. I BL Base utff urrent E = 3, EB = 3 na I EX llectr utff urrent E = 3, EB = 3 na ON HARATERISTIS* h FE D urrent Gain I =. ma, E =. I =. ma, E =. I = ma, E =. I = ma, E =. I = ma, E =. E(sat) llectr-emitter Saturatin ltage I = ma, I B =. ma I = ma, I B =. ma BE(sat) Base-Emitter Saturatin ltage I = ma, I B =. ma I = ma, I B =. ma (cntinued) N39 / MMBT39 / PZT39 SMALL SIGNAL HARATERISTIS f T urrent Gain - Bandwidth Prduct I = ma, E =, f = MHz b Output apacitance B =., I E =, f =. MHz ib Input apacitance EB =., I =, f =. MHz NF Nise Figure I = µa, E =., R S =.kω,f= Hz t.7khz 3 MHz. pf 8. pf. db SWITHING HARATERISTIS t d Delay Time = 3., BE =., 3 ns t r Rise Time I = ma, I B =. ma 3 ns t s Strage Time = 3., I = ma ns t f Fall Time I B = I B =. ma ns *Pulse Test: Pulse Width 3 µs, Duty ycle.% Spice Mdel NPN (Is=6.73f Xti=3 Eg=. af=7.3 Bf=6. Ne=.9 Ise=6.73 Ikf=66.78m Xtb=. Br=.737 Nc= Isc= Ikr= Rc= jc=3.638p Mjc=.38 jc=.7 Fc=. je=.93p Mje=.93 je=.7 Tr=39.n Tf=3.p Itf=. tf= Xtf= Rb=)

3 Typical haracteristics h - TYPIAL PULSED URRENT GAIN FE 3 Typical Pulsed urrent Gain vs llectr urrent -. I - OLLETOR URRENT (ma) E = - OLLETOR-EMITTER OLTAGE () ESAT... (cntinued) llectr-emitter Saturatin ltage vs llectr urrent β =. I - OLLETOR URRENT (ma) - N39 / MMBT39 / PZT39 - BASE-EMITTER OLTAGE () BESAT.8.6. Base-Emitter Saturatin ltage vs llectr urrent β = -. I - OLLETOR URRENT (ma) - BASE-EMITTER ON OLTAGE () BE(ON).8.6. Base-Emitter ON ltage vs llectr urrent E = -.. I - OLLETOR URRENT (ma) I - OLLETOR URRENT (na) BO. llectr-utff urrent vs Ambient Temperature B = 3 7 T - AMBIENT TEMPERATURE ( ) A APAITANE (pf) 3 apacitance vs Reverse Bias ltage ib f =. MHz b. REERSE BIAS OLTAGE ()

4 Typical haracteristics (cntinued) NF - NOISE FIGURE (db) 8 6 Nise Figure vs Frequency I =. ma R S = Ω I = µa R S =. kω I =. ma R S = Ω =. E I = µa, R = Ω S. f - FREQUENY (khz) NF - NOISE FIGURE (db) 8 6 (cntinued) Nise Figure vs Surce Resistance I =. ma I =. ma I = µa I = µa. R S - SOURE RESISTANE ( kω ) N39 / MMBT39 / PZT39 h fe - URRENT GAIN (db) 3 3 urrent Gain and Phase Angle vs Frequency h fe E = I = ma f - FREQUENY (MHz) θ θ - DEGREES P - POWER DISSIPATION (W) D.7.. TO-9 SOT-3 Pwer Dissipatin vs Ambient Temperature SOT-3 7 TEMPERATURE ( ) TIME (ns) Turn-On Time vs llectr urrent. I B= I B= = 3. r t B = I - OLLETOR URRENT (ma) t - RISE TIME (ns) r Rise Time vs llectr urrent T J = = T = J I B= I B= I - OLLETOR URRENT (ma)

5 Ω µ f Typical haracteristics (cntinued) t - STORAGE TIME (ns) S Strage Time vs llectr urrent T = J T J = I B= I B= t - FALL TIME (ns) (cntinued) Fall Time vs llectr urrent T = J T J = I B= I B= = N39 / MMBT39 / PZT39 I - OLLETOR URRENT (ma) I - OLLETOR URRENT (ma) h - URRENT GAIN fe urrent Gain E = f =. khz T A =. I - OLLETOR URRENT (ma) h - OUTPUT ADMITTANE ( mhs) e E = f =. khz T A = Output Admittance. I - OLLETOR URRENT (ma) h - INPUT IMPEDANE (k ) ie Input Impedance E = f =. khz T A =.. I - OLLETOR URRENT (ma) h - OLTAGE FEEDBAK RATIO (x ) _ re 7 3 ltage Feedback Rati E = f =. khz T A =. I - OLLETOR URRENT (ma)

6 Test ircuits Duty ycle = % -. 3 ns <. ns.6 KΩ 3. 7 Ω FIGURE : Delay and Rise Time Equivalent Test ircuit (cntinued) <. pf N39 / MMBT39 / PZT39 3. < t < µs t.9 7 Ω Duty ycle = % KΩ <. pf - 9. <. ns N96 FIGURE : Strage and Fall Time Equivalent Test ircuit