General Purpose Transistors
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- Ferdinand Chapman
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1 LESHN RDIO OMPNY, LD. General Purpose ransistors PNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4 ESD Rating Machine Model: >4 We declare that the material of product compliance with RoHS requirements. S- Prefix for utomotive and Other pplications Requiring Unique Site and ontrol hange Requirements; E-Q11 Qualified and PPP apable. MXIMUM RINGS ( = 25 unless otherwise noted) Rating Symbol alue Unit ollector-emitter oltage LB856 LB857 LB858, LB859 ollector-base oltage LB856 LB857 LB858, LB859 EO BO 8 5 EmitterBase oltage EBO 5. ollector urrent ontinuous I 1 mdc HERML HRERISIS haracteristic Symbol Max Unit otal Device Dissipation FR5 Board, (Note 1.) = 25 Derate above 25 hermal Resistance, Junction to mbient otal Device Dissipation lumina Substrate, (Note 2.) = 25 Derate above 25 hermal Resistance, Junction to mbient PD mw mw/ R J 556 /W PD 2.4 mw mw/ R J 417 /W Junction and Storage emperature J, stg 55 to FR5 = x.75 x.62 in 2. lumina =.4 x. x.24 in. 99.5% alumina. LB857L1G Series S-LB857L1G Series 1 1 BSE 2 SO2 OLLEOR 2 EMIER MRKING DIGRM xx 1 2 xx= Device Marking (See able Below) Rev.O 1/7
2 LESHN RDIO OMPNY, LD. LB857L1G Series, S-LB857L1G Series DEIE MRKING ND ORDERING INFORMION Device Marking Package Shipping (S-)LB856L1G /ape&reel (S-)LB856LG (S-)LB856BL1G B /ape&reel (S-)LB856BLG B (S-)LB857L1G E /ape&reel (S-)LB857L1G E (S-)LB857BL1G F /ape&reel (S-)LB857BLG F (S-)LB857L1G G /ape&reel (S-)LB857L1G G (S-)LB858L1G J /ape&reel (S-)LB858L1G J (S-)LB858BL1G K /ape&reel (S-)LB858BLG K (S-)LB858L1G L /ape&reel (S-)LB858LG L (S-)LB859BL1G 4B /ape&reel (S-)LB859BL1G 4B (S-)LB859L1G 4 /ape&reel (S-)LB859LG 4 Rev.O 2/7
3 LESHN RDIO OMPNY, LD. LB857L1G Series, S-LB857L1G Series ELERIL HRERISIS ( = 25 unless otherwise noted) haracteristic Symbol Min yp Max Unit OFF HRERISIS ollectoremitter Breakdown oltage (I = 1 m) ollectoremitter Breakdown oltage (I = 1 µ, EB = ) ollectorbase Breakdown oltage (I = 1 ) EmitterBase Breakdown oltage (IE = ) ollector utoff urrent (B = ) ollector utoff urrent (B =, = 15 ) ON HRERISIS D urrent Gain (I = m, E = 5. ) LB856 Series LB857 Series LB858, LB859 Series LB856 Series LB857 Series LB858, LB859 Series LB856 Series LB857 Series LB858, LB859 Series LB856 Series LB857 Series LB858, LB859 Series LB856, LB857, LB858 LB856B, LB857B, LB858B, LB859B LB857, LB858, LB859 (BR)EO (BR)ES 8 5 (BR)BO 8 5 (BR)EBO IBO hfe n µ ollectoremitter Saturation oltage (I = 1 m, IB =.5 m) (I = 1 m, IB = 5. m) BaseEmitter Saturation oltage (I = 1 m, IB =.5 m) (I = 1 m, IB = 5. m) BaseEmitter On oltage (I = m, E = 5. ) (I = 1 m, E = 5. ) SMLLSIGNL HRERISIS urrentgain Bandwidth Product (I = 1 m, E = 5. dc, f = 1 MHz) Output apacitance (B = 1, f = MHz) E(sat) BE(sat) BE(on) f 1 MHz ob 4.5 pf Noise Figure (I = m, E = 5. dc, RS = kω, f = khz, BW = 2 Hz) LB856, LB857, LB858 Series LB859 Series NF 1 4. db Rev.O /7
4 LESHN RDIO OMPNY, LD. LB857L1G Series, S-LB857L1G Series LB857/ LB858 h FE, NORMLIZED D URREN GIN E = 1 = 25, OLGE (OLS) = I /I =1 BE(sat) = 1 BE(on) I /I = 1 E(sat) B I, OLLEOR URREN (mdc) Figure 1. Normalized D urrent Gain I, OLLEOR URREN (mdc) Figure 2. Saturation and On oltages E, OLLEOR EMIER OLGE () I = 1 m I = 2 m I = 5 m = 25 I = 2 m I = 1 m θ B, EMPERURE OEFFIIEN (m/ ) to I, BSE URREN (m) B Figure. ollector Saturation Region I, OLLEOR URREN (m) Figure 4. BaseEmitter emperature oefficient 4 1., OLGE (OLS) ib ob =25 f, URREN GIN BNDWIDH PRODU (MHz) =1 E = , REERSE OLGE (OLS) R Figure 5. apacitances I, OLLEOR URREN (mdc) Figure 6. urrentgain Bandwidth Product Rev.O 4/7
5 LESHN RDIO OMPNY, LD. LB857L1G Series, S-LB857L1G Series LB856 h FE, D URREN GIN (NORMLIZED), OLLEOR EMIER OLGE (OLS) E = 5. E = 25 I = 1 m I, OLLEOR URREN (m) Figure 7. D urrent Gain 2m 1m I, BSE URREN (m) B Figure 9. ollector Saturation Region 2m θ B, EMPERURE OEFFIIEN (m/ ), OLGE (OLS) J = 25 I /I B = 1 E = 5. I /I B = m J = I, OLLEOR URREN (m) Figure 8. On oltage θ B for BE 55 to I, OLLEOR URREN (m) Figure 1. BaseEmitter emperature oefficient, PINE (pf) ib J = 25 ob f, URREN GIN BNDWIDH PRODU E = , REERSE OLGE (OLS) R Figure 11. apacitance I, OLLEOR URREN (m) Figure 12. urrentgain Bandwidth Product Rev.O 5/7
6 LESHN RDIO OMPNY, LD. LB857L1G Series, S-LB857L1G Series I, OLLEOR URREN (m) r( t), RNSIEN HERML RESISNE (NORMLIZED) D= SINGLE PULSE SINGLE PULSE = 25 J = 25 B558 B557 B556 BONDING WIRE LIMI HERML LIMI SEOND BREKDOWN LIMI E, OLLEOREMIER OLGE () Figure 14. ctive Region Safe Operating rea 1s P (pk) t, IME (ms) Figure 1. hermal Response ms t 1 t 2 Z θj (t) = r(t) R θj R θj = 8. /W MX Z θj (t) = r(t) R θj R θj = 2 /W MX D URES PPLY FOR POWER PULSE RIN SHOWN RED IME t 1 J(pk) = P (pk) R θj (t)..2 DUY YLE, D = t /t k k 5.k 1k he safe operating area curves indicate I E limits of the transistor that must be observed for reliable operation. ollector load lines for specific circuits must fall below the limits indicated by the applicable curve. he data of Figure 14 is based upon = 15 ; or J(pk) is variable depending upon conditions. Pulse curves are valid for duty cycles to 1% provided < 15. may be calculated from the data in Figure 1. t high case or ambient J(pk) J(pk) temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. Rev.O 6/7
7 LESHN RDIO OMPNY, LD. LB857L1G Series, S-LB857L1G Series D L 1 2 G H B S K J NOES: 1. DIMENSIONING ND OLERNING PER NSI Y14.5M, ONROLLING DIMENSION: INH. DIM INHES MILLIMEERS MIN MX MIN MX B D G H J K L S inches mm Rev.O 7/7
General Purpose Transistors PNP Silicon
General Purpose ransistors PNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4 ESD Rating Machine Model: >4 We declare that the material of product compliance with RoHS requirements.
General Purpose Transistors
PNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4 ESD Rating Machine Model: >4 We declare that the material of product compliance with RoHS requirements. 3 1 2 SO23 MAXIMUM RAINGS
General Purpose Transistors
General Purpose Transistors PNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 ESD Rating Machine Model: >400 Pb-Free Packages are Available LB856ALT1G Series 3 MAXIMUM RATINGS
MMBT3904-G (NPN) General Purpose Transistor. RoHS Device. Features. Maximum Ratings (at TA=25 C unless otherwise noted) Thermal Characteristics SOT-23
MMBT904-G (NPN) RoHS Device Features -Epitaxial planar die construction -s complementary type, the PNP transistor MMBT904-G is recommended 0.0 (.) 0.047 (.0) SOT- 0.0 (.04) 0. (.80) 0.080 (.04) 0.070 (.78)
BC556B, BC557A, B, C, BC558B. Amplifier Transistors. PNP Silicon BC556B PNP AUDIO 100MA 65V 500MW TO92.
B, A, B, C, B Amplifier Transistors PNP Silicon Features PbFree Packages are Available* B PNP AUDIO 1MA 65 5MW TO92 COLLECTOR 1 MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating
BC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features.
Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR 1 BASE MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit 2 EMITTER Collector-Emitter
E 1 C 2 C 1 E 2 B 2 B 1 B 2 E 2
OMPLEMENTARY NPN / PNP SMALL SIGNAL SURFAE MOUNT TRANSISTOR Features NEW PRODUT omplementary Pair Epitaxial Planar Die onstruction One 2222A Type (NPN), One 297A Type (PNP) Ideal for Low Power Amplification
Lead-free Green C 2 B 1 E 1 E 2 B 2 C T A = 25 C unless otherwise specified
Lead-free Green MMDT2227M OMPLEMENTARY NPN / PNP SMALL SIGNAL SURFAE MOUNT TRANSISTOR Features omplementary Pair Epitaxial Planar Die onstruction One 2222A Type (NPN), One 2907A Type (PNP) Ideal for Low
Type Marking Pin Configuration Package BCM856S 3Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
BM86S PNP Silicon AF Transistor Array Precision matched transistor pair: I % For current mirror applications Low collectoremitter saturation voltage Two (galvanic) internal isolated Transistors omplementary
BC556B, BC557A, B, C, BC558B, C. Amplifier Transistors. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO CBO
Type Marking Pin Configuration Package SMBT2222A/MMBT2222A s1p 1 = B 2 = E 3 = C SOT23
SMBTA/MMBTA NPN Silicon Switching Transistor Low collectoremitter saturation voltage omplementary type: SMBT97A / MMBT97A (PNP) 1 Pbfree (RoHS compliant) package Qualified according AE Q1 Type Marking
BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor
BC847BPDX6, SBC847BPDX6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT563 which is designed for low power surface
General Purpose Transistors
General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 33/SC which is designed for low power surface mount
Type Marking Pin Configuration Package SMBTA06/MMBTA06 s1g 1=B 2=E 3=C SOT23
SMBTA6/MMBTA6 NPN Silicon AF Transistor Low collectoremitter saturation voltage omplementary type: SMBTA 6 / MMBTA6 (PNP) Pbfree (RoHS compliant) package Qualified according AE Q Type Marking Pin onfiguration
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSBC847BDW1T2G, BC848CDW1T1G Dual General Purpose Transistors NPN Duals SOT363 CASE 419B STYLE 1 These transistors are designed for general
Type Marking Pin Configuration Package BCW66KF BCW66KG BCW66KH 1=B 1=B 1=B
NPN Silicon AF Transistors For general AF applications High current gain Low collectoremitter saturation voltage omplementary type: BW68 (PNP) Pbfree (RoHS compliant) package Qualified according AE Q Type
BC846ALT1 Series. General Purpose Transistors. NPN Silicon
BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 ESD Rating Machine Model: >400 PbFree Packages
Type Marking Pin Configuration Package BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* 1=B 1=B 1=B 1=B 1=B 1=B
NPN Silicon AF Transistors For general AF applications High current gain Low collectoremitter saturation voltage omplementary type: BW68 (PNP) Pbfree (RoHS compliant) package ) Qualified according AE Q
Type Marking Pin Configuration Package SMBT2907A/MMBT2907A s2f 1 = B 2 = E 3 = C SOT23
PNP Silicon Switching Transistor Low collectoremitter saturation voltage omplementary type: SMBTA / MMBTA (NPN) 1 Pbfree (RoHS compliant) package 1) Qualified according AE Q1 Type Marking Pin onfiguration
SMBT MMBT3906 SMBT3906S/U. Type Marking Pin Configuration Package SMBT3906S SMBT3906U
PNP Silicon Switching Transistors High D current gain:. ma to ma Low collectoremitter saturation voltage For SMBT96S and SMBT96U: Two (galvanic) internal isolated transistor with good matching in one package
Characteristic Symbol Value Unit Output Current I out 150 ma
LBNB ma LOAD SWITH FEATURING OMPLEMENTARY BIPOLAR TRANSISTORS NEW PRODUT General Description LMNB is best suited for applications where the load needs to be turned on and off using control circuits like
BC BC Pb-containing package may be available upon special request
B86...B86... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between hz and khz omplementary types: B846...B8...
Type Marking Pin Configuration Package BFN27 FLs 1=B 2=E 3=C SOT23
PNP Silicon HighVoltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage 2 Low collectoremitter saturation voltage omplementary types: BFN26 (NPN)
2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E
B847...B8... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz omplementary types: B87...B86...(PNP)
BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
High Current Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 60 dc Collector Base oltage CBO 60 dc Emitter
BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon
BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2 which is designed for low power
PN4258. Symbol Parameter Value Units
PN8 PN8 PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to ma. Sourced from process 6. TO-9. Emitter. Base 3. ollector Absolute Maximum Ratings*
SOT-23 Mark: 1A. = 25 C unless otherwise noted T A. Symbol Parameter Value Units
B E N39 TO-9 MMBT39 SOT-3 Mark: A B E PZT39 B SOT-3 E N39 / MMBT39 / PZT39 This device is designed as a general purpse amplifier and switch. The useful dynamic range extends t ma as a switch and t MHz
BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS
BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage
MMBT3906L, SMMBT3906L. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices are PbFree,
FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier
FFB39 / FMB39 / MMPQ39 NPN Multi-hip General Purpose Amplifier Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to ma as a switch and to MHz
PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357
DEVICES PNP SILICON SITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 LEVELS 2N3634 2N3635 2N3636 2N3637 JAN 2N3634L 2N3635L 2N3636L 2N3637L JANTX 2N3634UB 2N3635UB 2N3636UB 2N3637UB JANTXV JANS ABSOLUTE
BC817-AU SERIES NPN GENERAL PURPOSE TRANSISTORS. VOLTAGE 45 Volts POWER 330 mw FEATURES MECHANICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS
B817AU SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 45 Volts POWER 33 mw SOT23 Unit: inch(mm) FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design ollector current I =
2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 1 Collector Base oltage CBO 16 Emitter Base oltage
BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector - Emitter oltage CEO 65 45 dc 3 EMITTER Collector
2N3904 SMALL SIGNAL NPN TRANSISTOR
SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment TO-92 / Bulk -AP TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB
BC846BDW1, BC847BDW1, BC848CDW1. Dual General Purpose Transistors. NPN Duals
BC846BDW1, BC847BDW1, BC848CDW1 Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT363/SC88 which is designed
MMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon
MMBT55L, MMBT555L, SMMBT555L High Voltage Transistors NPN Silicon Features AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
2N5550, 2N5551. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
2N55, Preferred Device Amplifier Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Collector Emitter oltage Collector Base oltage Rating Symbol alue Unit 2N55 2N55 CEO 140
2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS
2N4923 is a Preferred Device MediumPower Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation
2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS
N413, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit N413 N413 V CEO 5 V CBO 4 EmitterBase
P2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon Features These are Pb -Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 6 CollectorBase Voltage V CBO 6 EmitterBase Voltage V EBO Collector
BC807-16W/-25W/-40W Taiwan Semiconductor
200mW, PNP Small Signal Transistor FEATURES Epitaxial planar die construction Surface mount device type Moisture sensitivity level Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free and RoHS
2N4918-2N4920 Series. Medium-Power Plastic PNP Silicon Transistors 3.0 A, V, 30 W GENERAL PURPOSE POWER TRANSISTORS
2N4918-2N492 Series Medium-Power Plastic PNP Silicon Transistors These mediumpower, highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low
MMBT2369A NPN Switching Transistor
MMBT69A NPN Switching Transistor Description This device is designed for high speed saturated switching at collector currents of ma to ma. Sourced from process. SOT-. Base. Emitter. ollector MMBT69A NPN
COMPLEMENTARY NPN/PNP TRANSISTOR
SEMICONDUCTOR DATA SHEET COMPLEMENTARY NPN/PNP TRANSISTOR FEATURES Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching
2SC3457. isc Silicon NPN Power Transistor. isc Product Specification. INCHANGE Semiconductor. isc Website:
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification DESCRIPTION High Breakdown oltage- : (BR)CBO = 1100(Min) Fast Switching Speed Wide Area of Safe Operation APPLICATIONS
200mW, PNP Small Signal Transistor
200mW, PNP Small Signal Transistor FEATURES Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free and
PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAM
, is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Rating Symbol Value
BCW61..., BCX71... PNP Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage
PNP Silicon AF Transistors For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz Complementary types: BCW6, BCX7 (NPN) Pbfree
2N5655G, 2N5657G. Plastic NPN Silicon High-Voltage Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON VOLTS, 20 WATTS
, Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in lineoperated equipment such as audio output amplifiers; lowcurrent, highvoltage converters; and AC line relays.
2N4401 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) (TO-92) FEATURES
2N441 TO 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM:.6 W(Tamb=25 O C) * Collector current ICM:.6 A * Collectorbase voltage V (BR)CBO : 6 V * Operating and storage junction
350mW, PNP Small Signal Transistor
35mW, PNP Small Signal Traistor FEATURES - Epitaxial planar die cotruction - Surface device type mounting - Moisture seitivity level - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version
BUL45D2G. High Speed, High Gain Bipolar NPN Power Transistor. with Integrated Collector Emitter Diode and Built in Efficient Antisaturation Network
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector Emitter Diode and Built in Efficient Antisaturation Network The is state of art High Speed High gain BiPolar transistor (HBIP).
BC846AW - BC850CW Taiwan Semiconductor. NPN Transistor. Small Signal Product SOT-323 FEATURES MECHANICAL DATA
NPN Transistor FEATURES - Low reverse current, high reliability - Surface device type mounting - Moisture sensitivity level - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free version and
DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
Type Marking Pin Configuration Package BCM846S 1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
NPN Silicon AF Transistor Array Precision matched transistor pair: I C % For current mirror applications Low collectoremitter saturation voltage Two (galvanic) internal isolated Transistors Complementary
C1 (2) C2 (1) E1 (3) E2 (4) Type Marking Pin Configuration Package BCV61B BCV61C 2 = C1 2 = C1 1 = C2 1 = C2
NPN Silicon Double Transistor To be used as a current mirror Good thermal coupling and V BE matching High current gain Low collectoremitter saturation voltage C1 (2) C2 (1) 2 Tr.1 Tr.2 1 VPS05178 E1 ()
Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 (2) Type Marking Pin Configuration Package BCV62A BCV62B BCV62C 2 = C1 2 = C1 2 = C1
PNP Silicon Double Transistor To be used as a current mirror Good thermal coupling and V BE matching High current gain Low collector-emitter saturation voltage 1 2 Pb-free (RoHS compliant) package Qualified
BUL45D2G. High Speed, High Gain Bipolar NPN Power Transistor. with Integrated Collector Emitter Diode and Built in Efficient Antisaturation Network
BULDG High Speed, High Gain Bipolar NPN Power Traistor with Integrated CollectorEmitter Diode and Builtin Efficient Antisaturation Network The BULDG is stateofart High Speed High gain BiPolar traistor
BCW60, BCX70. NPN Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage
BCW6, BCX7 NPN Silicon A Transistors or A input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz Complementary types: BCW6, BCX7 (PNP)
2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base
Type Marking Pin Configuration Package BCX42 BSS63 1 = B 1 = B 2 = E 2 = E
, PNP Silicon AF an Swiching Transistors For general AF applications High breakdown voltage Low collectoremitter saturation voltage Complementary types: BCX4, BSS64 (NPN) VPS6 Type Marking Pin Configuration
absolute maximum ratings at 25 C case temperature (unless otherwise noted)
,, B, C, D Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D W at C Case Temperature A Continuous Collector Current Minimum h FE of 70 at 3, 6 A B C E SOT-93 PACKAGE (TOP IEW)
B 1 E 1. C 1 Internal Schematic (TOP VIEW) E 1, B 1, C 1 = PNP3906 Section E 2, B 2, C 2 = NPN3904 Section
4 COMPLEMENTRY NPN / PNP SURFCE MOUNT TRNSISTORS Features Complementary Pair: One 3904 (NPN) and One 3906 (PNP) Epitaxial Planar Die Construction Ideally Suited for utomated ssembly Processes Lead Free
LOW V CE(SAT) NPN SURFACE MOUNT TRANSISTOR. Top View
DSS46U LOW V CE(ST) NPN SURFCE MOUNT TRNSISTOR Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage, V CE(ST) Complementary PNP Type vailable (DSS56U) Ultra-Small Surface
PZT2222A. NPN Silicon Planar Epitaxial Transistor SOT 223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT
NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT223 package which is designed for
BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS
, A, B, C Designed for Complementary Use with the BD26 Series W at 25 C Case Temperature 0 A Continuous Collector Current 5 A Peak Collector Current Customer-Specified Selections Available B C E SOT-9
2N4403. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
N443 Preferred Device General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit BASE Collector Emitter Voltage V CEO 4 Vdc Collector
0.016 W/ C to +150 C
MJF00 (NPN), MJF0 (PNP) Complementary Power Transistors For Isolated Package Applications Designed for general purpose amplifier and switching applications, where the mounting surface of the device is
PN2222A TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) (TO-92) FEATURES
PN2222A TO 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM: 625mW(Tamb=25 O C) * Collector current ICM:.6 A * Collectorbase voltage V (BR)CBO : 75 V * Operating and storage junction
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
MUN534W, NSB4YPXV6, NSB4YPP6 omplementary Bias Resistor Transistors R = 0 k, R2 = 47 k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace
HARDENED PNP SILICON SWITCHING TRANSISTOR
6 Lake Street, Lawrence, MA 01841 RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2907A JANSM 3K Rads (Si) 2N2906AL 2N2907AL JANSD 10K Rads
MMBT2222ATB NPN GENERAL PURPOSE SWITCHING TRANSISTOR. VOLTAGE 40 Volt POWER 225 mwatt FEATURES MECHANICAL DATA ABSOLUTE RATINGS
NPN GENERAL PURPOSE SWITHING TRANSISTOR OLTAGE 4 olt POWER 225 mwatt FEATURES NPN epitaxial silicon, planar design ollectoremitter voltage E = 4 ollector current I = 6mA Lead free in compliance with EU
MP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)
TOSHIBA Power Transistor Module Silicon Epitaxial Type (Darlington power transistor in ) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications
LMBZ52xxBLG Series. 225 mw SOT 23 Surface Mount LESHAN RADIO COMPANY, LTD. 1/6
5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed to provide voltage regulation with minimum space requirement.
Type Marking Pin Configuration Package BSP60 BSP61 BSP62 2=C 2=C 2=C 3=E 3=E 3=E
BSP6 PNP Silicon Darlington Transistor High collector current Low collectoremitter saturation voltage Complementary types: BSP0...BSP (NPN) 1 Pbfree (RoHS compliant) package 1) Qualified according AEC
MJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS
NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS s for which the
Type Marking Pin Configuration Package BC BC807-16W BC BC807-25W BC BC807-40W BC BC808-25W BC808-40
PNP Silicon AF Transistor For general AF applications High collector current High current gain Low collectoremitter saturation voltage Complementary type: BC87.../W, BC88.../W (NPN) Pbfree (RoHS compliant)
BDP947_BDP949_BDP953. Silicon NPN Transistors. For AF driver and output stages High collector current High current gain
BDP97_BDP99_BDP95 Silicon NPN Transistors For AF driver and output stages High collector current High current gain Low collectoremitter saturation voltage Complementary types: BDP98, BDP95, BDP95 (PNP)
Type Marking Pin Configuration Package BCX42 DKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO
PNP Silicon AF and Switching Transistor For general AF applications High breakdown voltage Low collectoremitter saturation voltage Complementary type: BCX4 (NPN) Pbfree (RoHS compliant) package Qualified
RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255
RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS 2N2221A 2N2222A JANSM 3K Rads (Si) 2N2221AL 2N2222AL JANSD K Rads (Si) 2N2221AUA 2N2222AUA JANSP 30K Rads
List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics Rating and characteristic curves...
List List... Package utline... 1 2 Features... 2 Mechanical data... Maximum ratings... 2 2 Electrical characteristics... 3 Rating and characteristic curves... 4~5 Pinning infrmatin... 6 Marking... Suggested
MJF6388 (NPN) MJF6668 (PNP) Complementary Power Darlingtons. For Isolated Package Applications
MJF688 (), () Complementary Power Darlingtons For Isolated Package Applications Designed for generalpurpose amplifiers and switching applications, where the mounting surface of the device is required to
BCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C
PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω, R = kω ) For 6PIN packages: two (galvanic) internal isolated transistors with
2N3903, 2N3904. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS. THERMAL CHARACTERISTICS (Note 1)
N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector
Type Marking Pin Configuration Package BFR93A R2s 1=B 2=E 3=C SOT23
NPN Silicon RF Transistor For lownoise, high gain broadband amplifiers at collector currents from ma to 0 ma Pbfree (RoHS compliant) package ESD (Electrostatic discharge) sensitive device, observe handling
IGBT Designer s Manual
IGBT Designer s Manual Data Sheets The IGBT devices listed in this Designer s Manual represent International Rectifier s IGBT line as of August, 994. The data presented in this manual supersedes all previous
VDSS RDS(on) max (m -12V Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Symbol Parameter Typ. Max.
D- 909A IRF7329 HXF ower MOSF l rench echnology l Ultra Low On-Resistance l Dual -hannel MOSF l Low rofile (
2N2904A-2N2905A 2N2906A-2N2907A
2N2904A-2N2905A 2N2906A-2N2907A GENERAL PURPOSE AMPLIFIERS AND SITCHES DESCRIPTION The 2N2904A, 2N2905A, 2N2906A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2904A and
MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1. Dual General Purpose Transistors
MBT394DW, MBT394DW2, SMBT394DW, NSVMBT394DW Dual General Purpose Transistors The MBT394DW and MBT394DW2 devices are a spinoff of our popular SOT23/SOT323 threeleaded device. It is designed for general
Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323
Low Noise Silicon Bipolar RF Transistor For low distortion amplifiers and oscillators up to GHz at collector currents from 5 ma to 30 ma 3 Pbfree (RoHS compliant) and halogenfree package with visible leads
Type Marking Pin Configuration Package BFR182W RGs 1=B 2=E 3=C SOT323
Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz 3 Pbfree (RoHS compliant) and halogenfree
SEMICONDUCTOR TECHNICAL DATA KIA6801K DRIVER BI-DIRECTIONAL DC MOTOR DRIVER
SEMICONDUCTOR TECHNICL DT BIPOLR LINER INTEGRTED CIRCUIT BI-DIRECTIONL DC MOTOR DRIER is a monolithic integrated circuit designed for driving bi-directional DC motor with braking and speed control, and
Type Marking Pin Configuration Package BCX68-10 BCX68-16 BCX =B 1=B 1=B
NPN Silicon AF Transistors For general AF applications High collector current High current gain Low collectoremitter saturation voltage Complementary type: BCX69 (PNP) Pbfree (RoHS compliant) package )
Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323
NPN Silicon RF Transistor For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 ma to 30 ma 3 1 2 Pbfree (RoHS compliant) package Qualified according AEC Q1 ESD (Electrostatic
BFS483. Low Noise Silicon Bipolar RF Transistor
Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 30 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz Two (galvanic) internal isolated Transistor
Type Marking Pin Configuration Package BFN24 BFN26 1=B 1=B
BFN4, BFN6 NPN Silicon HighVoltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collectoremitter saturation voltage Complementary type:
Type Marking Pin Configuration Package BFR183 RHs 1=B 2=E 3=C SOT23
Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 30 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz Pbfree (RoHS compliant) package Qualification