List... Package outline... Features Mechanical data... Maximum ratings... Rating and characteristic curves... Pinning information...
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1 High Vltage PNP Silicn Transistr Frmsa MS List List... Package utline Features... 2 Mechanical data... Maximum ratings... Rating and characteristic curves ~3 4~5 Pinning infrmatin... 6 Marking... Suggested slder pad layut Packing infrmatin... 7 Reel packing... 8 Suggested thermal prfiles fr sldering prcesses... 8 High reliability test capabilities Page 1 Dcument ID Issued Date Revised Date Revisin Page.
2 High Vltage PNP Silicn Transistr Frmsa MS High Vltage PNP Transistr Package utline ST-23 Features Lead-free parts fr green partner, exceeds envirnmental standards f MIL-STD /228 Suffix "-H" dinicates Halgen-free part, ex.-h. 20 (3.04) 10 (2.80).084(2.10).068(1.70) (1.15) (0.85) (B) (A) () (0.50) (0.30) (1.60) (0.67) Mechanical data (1.20) 08 (2.75) (2.10) (0.32) pxy:ul94-v0 rated flame retardant ase : Mlded plastic, ST (1.30) (0.89) (8) (0.09) Terminals : Slder plated, slderable per Munting Psitin : Any MIL-STD-750, Methd 2026 Dimensins in inches and (millimeters) Weight : Apprximated gram Maximum ratings (AT T A=25 unless therwise nted) PARAMTR NDITINS Symbl Value llectr Base Vltage V B -160 llectr mitter Vltage V -150 mitter Base Vltage V B -5.0 llectr urrent ntinuus I -500 madc Thermal haracteristics haracteristics Ttal device dissipatin FR-5 bard (1) Thermal resistance Ttal device dissipatin alumina substrate(2) Thermal resistance perating temperature Strage temperature T A = 25 Derate abve 25 Junctin t ambient R θja 556 /W T A = 25 Derate abve 25 1.FR-5 = 1.0 X 0.75 X0.062 in. 2.Alumina = 0.4 X 0.3 X in. 99.5% alumina. NDITINS Symbl P D P D P D T J -55 ~ +150 T STG -55 ~ +150 mw mw/ Junctin t ambient R θja 417 /W P D Max mw mw/ Page 2 Dcument ID Issued Date Revised Date Revisin Page.
3 High Vltage PNP Silicn Transistr Frmsa MS lectrical haracteristics (AT T A=25 unless therwise nted) FF characteristics PARAMTR NDITINS Symbl Min. Max. llectr Base Breakdwn Vltage I =-100uAdc,I =0 V (BR)B -160 llectr mitter Breakdwn Vltage I =-1.0mAdc,I B=0 V mitter Base Breakdwn Vltage I = -10uAdc, I = 0 V (BR) B (BR) -150 V B = -120, I = 0 llectr utff urrent I -50 V S B = -120, I = 0,T A= nadc uadc N characteristics PARAMTR NDITINS Symbl Min. Max. D urrent Gain I =- 1.0mAdc, V = -5.0 I =- 10mAdc, V = -5.0 I =- 50mAdc, V = -5.0 h F llectr mitter Saturatin Vltage I = -10mAdc, I B = -1.0mAdc I = -50mAdc, I B = -5.0mAdc V (sat) Base mitter Saturatin Vltage I = -10mAdc, I B = -1.0mAdc I = -50mAdc, I B = -5.0mAdc V B(sat) Small Siglal characteristics PARAMTR NDITINS Symbl Min. Max. urrent-gain-bandwidth Prduct I =- 10mAdc, V = -10, f=100mhz f T MHZ utput apacitance V B =-10,I =0, f=1.0mhz b 6.0 pf Small Signal urrent Gain I =- 1.0mAdc, V = -10, f=1.0khz h fe Nise Figure I =- 200uAdc, V = -5.0, R S=10Ω,f=1.0KHz NF db Page 3 Dcument ID Issued Date Revised Date Revisin Page.
4 High Vltage PNP Silicn Transistr Frmsa MS Page 4 Dcument ID Issued Date Revised Date Revisin Page.
5 High Vltage PNP Silicn Transistr Frmsa MS 10us 10ns t,tim(ns) t,tim(ns) Page 5 Dcument ID Issued Date Revised Date Revisin Page.
6 High Vltage PNP Silicn Transistr Frmsa MS Pinning infrmatin PinB Pin Pin Pin Simplified utline Symbl Base llectr mitter B B Marking Type number Marking cde 2L Suggested slder pad layut ST (0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.031(0.80) Dimensins in inches and (millimeters) Page 6 Dcument ID Issued Date Revised Date Revisin Page.
7 High Vltage PNP Silicn Transistr Frmsa MS Packing infrmatin P0 d P1 F B W A P D2 D1 T D W1 unit:mm Item Symbl Tlerance ST-23 arrier width arrier length arrier depth Sprcket hle 13" Reel utside diameter A B d D " Reel inner diameter 7" Reel utside diameter 7" Reel inner diameter Feed hle diameter Sprcket hle psitin Punch hle psitin Punch hle pitch Sprcket hle pitch mbssment center verall tape thickness Tape width Reel width D1 D D1 D2 F P P0 P1 T W W1 min 2.0 min Nte:Devices are packed in accr dance with IA standar RS-481-A and specificatins listed abve. Page 7 Dcument ID Issued Date Revised Date Revisin Page.
8 High Vltage PNP Silicn Transistr Frmsa MS Reel packing PAKAG RL SIZ RL (pcs) MPNNT SPAING (m/m) BX (pcs) INNR BX (m/m) RL DIA, (m/m) ARTN SIZ (m/m) ARTN (pcs) APPRX. GRSS WIGHT (kg) ST-23 7" 3, , *183* *262* , Suggested thermal prfiles fr sldering prcesses 1.Strage envirnment: Temperature=5 ~40 Humidity=55%±25% 2.Reflw sldering f surface-munt devices TP Tp ritical Zne TL t TP Ramp-up TL Tsmax TL Tsmin Temperature ts Preheat Ramp-dwn 25 t25 t Peak 3.Reflw sldering Time Prfile Feature Sldering nditin Average ramp-up rate(tl t TP) <3 /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min t max)(ts) Tsmax t TL -Ramp-upRate Time maintained abve: -Temperature(TL) -Time(tL) Peak Temperature(TP) ~120sec <3 /sec ~260sec 255-0/+5 Time within 5 f actual Peak Temperature(tP) 10~30sec Ramp-dwn Rate Time 25 t Peak Temperature <6 /sec <6minutes Page 8 Dcument ID Issued Date Revised Date Revisin Page.
9 High Vltage PNP Silicn Transistr Frmsa MS High reliability test capabilities Item Test 1. Steady State perating Life nditins TA=25 P D=225mW Test Duratin:1000hrs 2. High Temperature Reverse Bias Tj=150,V =80% related vlage, Test Duratin: 1000hrs 3. Temperature ycle -55 (15min) t 150 (15min)Air t Air Transitin Time<20sec Test ycles:1000cycle 4. Autclave P=2atm Ta=121 RH=100% Test Duratin:96hrs 5. High Temperature Strage Life Ta=150 Test Duratin:1000hrs 6. Slderability 245,Test Duratin:5sec 7. High Temperature High Humidity Reverse Bias Ta=85, 85%RH, V =80% related vlage,test Duratin:1000hrs 8. Resistance t Sldering Heat 260,Test Duratin:10sec Page 9 Dcument ID Issued Date Revised Date Revisin Page.
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List List... Package utline... Features... Mechanical data... Maximum ratings... Electrical characteristics... 3 Rating and characteristic curves... 4~ Pinning infrmatin... 6 Suggested slder pad layut...
More informationC unless otherwise noted) CONDITIONS. 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) f=1mhz and applied 4V DC reverse voltage
rwnp Technlgy 1. Surface Munt Fast Recvery Rectifiers--1V Features atch prcess design, excellent pwer dissipatin ffers better reverse leakage current and thermal resistance. Lw prfile surface munted applicatin
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