Mark:1A. Symbol Parameter Value Units

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1 N39 / MMBT39 / PZT39 NPN General Purpse Amplifier Features This device is designed as a general purpse amplifier and switch. The useful dynamic range extends t ma as a switch and t MHz as an amplifier. EB N39 MMBT39 PZT39 Abslute Maximum Ratings* T a = unless therwise nted TO-9 OT-3 B OT-3 Mark:A Octber ymbl Parameter alue Units EO llectr-emitter ltage BO llectr-base ltage 6 EBO Emitter-Base ltage 6. I llectr urrent - ntinuus ma T J, T stg Operating and trage Junctin Temperature Range - t + * These ratings are limiting values abve which the serviceability f any semicnductr device may be impaired. NOTE: ) These ratings are based n a maximum junctin temperature f degrees. ) These are steady state limits. The factry shuld be cnsulted n applicatins invlving pulsed r lw duty cycle peratins. E B E N39 / MMBT39 / PZT39 NPN General Purpse Amplifier Thermal haracteristics T a = unless therwise nted ymbl P D Parameter Ttal Device Dissipatin Derate abve Max. N39 *MMBT39 **PZT39 * Device munted n FR- PB.6" X.6" X.6". ** Device munted n FR- PB 36 mm X 8 mm X. mm; munting pad fr the cllectr lead min. 6 cm , 8. Units mw mw/ R θj Thermal Resistance, Junctin t ase 83.3 /W R θja Thermal Resistance, Junctin t Ambient 37 /W Fairchild emicnductr rpratin N39 / MMBT39 / PZT39 Rev. B

2 Electrical haracteristics T a = unless therwise nted ymbl Parameter Test nditin Min. Max. Units OFF HARATERITI (BR)EO llectr-emitter Breakdwn ltage I =.ma, I B = (BR)BO llectr-base Breakdwn ltage I = μa, I E = 6 (BR)EBO Emitter-Base Breakdwn ltage I E = μa, I = 6. I BL Base utff urrent E = 3, EB = 3 na I EX llectr utff urrent E = 3, EB = 3 na ON HARATERITI* h FE D urrent Gain I =.ma, E =. I =.ma, E =. I = ma, E =. I = ma, E =. I = ma, E =. E(sat) llectr-emitter aturatin ltage I = ma, I B =.ma I = ma, I B =.ma BE(sat) Base-Emitter aturatin ltage I = ma, I B =.ma I = ma, I B =.ma MALL IGNAL HARATERITI f T urrent Gain - Bandwidth Prduct I = ma, E =, f = MHz b Output apacitance B =., I E =, f =.MHz ib Input apacitance EB =., I =, f =.MHz NF Nise Figure I = μa, E =., R =.kω, f = Hz t.7khz WITHING HARATERITI t d Delay Time = 3., BE =. I = ma, I B =.ma * Pulse Test: Pulse Width 3μs, Duty ycle.% MHz. pf 8. pf. db 3 ns t r Rise Time 3 ns t s trage Time = 3., I = ma, ns t f Fall Time I B = I B =.ma ns N39 / MMBT39 / PZT39 NPN General Purpse Amplifier Ordering Infrmatin Part Number Marking Package Packing Methd Pack Qty N39BU N39 TO-9 BULK N39TA N39 TO-9 AMMO N39TAR N39 TO-9 AMMO N39TF N39 TO-9 TAPE REEL N39TFR N39 TO-9 TAPE REEL MMBT39 A OT-3 TAPE REEL 3 MMBT39_D87Z A OT-3 TAPE REEL PZT39 39 OT-3 TAPE REEL Fairchild emicnductr rpratin N39 / MMBT39 / PZT39 Rev. B

3 Typical Perfrmance haracteristics h - TYPIAL PULED URRENT GAIN FE - BAE-EMITTER OLTAGE () BEAT Typical Pulsed urrent Gain vs llectr urrent Base-Emitter aturatin ltage vs llectr urrent β = - -. I - OLLETOR URRENT (ma). I - OLLETOR URRENT (ma) E = - OLLETOR-EMITTER OLTAGE () EAT - BAE-EMITTER ON OLTAGE () BE(ON) llectr-emitter aturatin ltage vs llectr urrent β =. I - OLLETOR URRENT (ma) Base-Emitter ON ltage vs llectr urrent E = -.. I - OLLETOR URRENT (ma) - N39 / MMBT39 / PZT39 NPN General Purpse Amplifier I - OLLETOR URRENT (na) BO. llectr-utff urrent vs Ambient Temperature B = 3 7 T - AMBIENT TEMPERATURE ( ) A APAITANE (pf) 3 apacitance vs Reverse Bias ltage ib f =. MHz b. REERE BIA OLTAGE () Fairchild emicnductr rpratin N39 / MMBT39 / PZT39 Rev. B 3

4 Typical Perfrmance haracteristics (cntinued) NF - NOIE FIGURE (db) h fe - URRENT GAIN (db) Nise Figure vs Frequency I =. ma R = ΩΩ I = μa μa R =. kω I =. ma R = ΩΩ =. E I = μa, R = Ω. f - FREQUENY (khz) urrent Gain and Phase Angle vs Frequency h fe E = I = ma f - FREQUENY (MHz) θ θ - DEGREE NF - NOIE FIGURE (db) P - POWER DIIPATION (W) D 8 6. R - OURE REITANE ( kω kω ) ).7.. Nise Figure vs urce Resistance I =. ma TO-9 OT-3 I =. ma Pwer Dissipatin vs Ambient Temperature OT-3 I = μa I = μa 7 TEMPERATURE ( ) N39 / MMBT39 / PZT39 NPN General Purpse Amplifier TIME (n) Turn-On Time vs llectr urrent. I B= I B= = 3. r t B = I - OLLETOR URRENT (ma) t - RIE TIME (ns) r Rise Time vs llectr urrent T J = = T = J I B= I B= I - OLLETOR URRENT (ma) Fairchild emicnductr rpratin N39 / MMBT39 / PZT39 Rev. B

5 Ω μ f 参考資料 Typical Perfrmance haracteristics (cntinued) t - TORAGE TIME (ns) h - URRENT GAIN fe trage Time vs llectr urrent T = J T J = I B= I B= I - OLLETOR URRENT (ma) urrent Gain E = f =. khz T A =. I - OLLETOR URRENT (ma) t - FALL TIME (ns) h - OUTPUT ADMITTANE ( μnhs mhs) e Fall Time vs llectr urrent T = J T J = I B= I B= = I - OLLETOR URRENT (ma) E = f =. khz T A = Output Admittance. I - OLLETOR URRENT (ma) N39 / MMBT39 / PZT39 NPN General Purpse Amplifier h - INPUT IMPEDANE (k (kω) ) ie Input Impedance E = f =. khz T A =.. I - OLLETOR URRENT (ma) h - OLTAGE FEEDBAK RATIO (x ) _ re 7 3 ltage Feedback Rati E = f =. khz T A =. I - OLLETOR URRENT (ma) Fairchild emicnductr rpratin N39 / MMBT39 / PZT39 Rev. B

6 Test ircuits 3. 3ns 7 Ω.6 Duty ycle = % KΩ kω -. <.pf pf <.ns ns FIGURE : Delay and Rise Time Equivalent Test ircuit 3. < t t< t < μs μs.9 7 Ω Duty ycle = % KΩ kω <.pf pf - 9. N96 <.ns ns FIGURE : trage and Fall Time Equivalent Test ircuit N39 / MMBT39 / PZT39 NPN General Purpse Amplifier Fairchild emicnductr rpratin N39 / MMBT39 / PZT39 Rev. B 6

7 TRADEMARK The fllwing includes registered and unregistered trademarks and service marks, wned by Fairchild emicnductr and/r its glbal subsidiaries, and is nt intended t be an exhaustive list f all such trademarks. l AccuPwer Aut-PM AX-AP * Biti Build it Nw replu repower ROOLT TL urrent Transfer Lgic DEUXPEED Dual l EcPARK EfficientMax EB Fairchild Fairchild emicnductr FAT Quiet eries FAT FAT Fastvre FETBench FlashWriter * FP F-PF FRFET Glbal Pwer Resurce M Green FP Green FP e-eries Gmax GTO IntelliMAX IOPLANAR Making mall peakers und Luder and Better MegaBuck MIROOUPLER MicrFET MicrPak MicrPak MillerDrive MtinMax Mtin-PM mwaver OptHiT OPTOLOGI OPTOPLANAR * Trademarks f ystem General rpratin, used under license by Fairchild emicnductr. PDP PM Pwer-PM PwerTrench PwerX Prgrammable Active Drp QFET Q Quiet eries Rapidnfigure aving ur wrld, mw/w/kw at a time ignalwise martmax MART TART PM TEALTH uperfet uperot -3 uperot -6 uperot -8 upremo yncfet ync-lck * The Pwer Franchise TinyBst TinyBuck Tinyalc TinyLgic TINYOPTO TinyPwer TinyPWM TinyWire Trani TriFault Detect TRUEURRENT * erdes UH Ultra FRFET UniFET X isualmax ltageplus X DILAIMER FAIRHILD EMIONDUTOR REERE THE RIGHT TO MAKE HANGE WITHOUT FURTHER NOTIE TO ANY PRODUT HEREIN TO IMPROE RELIABILITY, FUNTION, OR DEIGN. FAIRHILD DOE NOT AUME ANY LIABILITY ARIING OUT OF THE APPLIATION OR UE OF ANY PRODUT OR IRUIT DERIBED HEREIN; NEITHER DOE IT ONEY ANY LIENE UNDER IT PATENT RIGHT, NOR THE RIGHT OF OTHER. THEE PEIFIATION DO NOT EXPAND THE TERM OF FAIRHILD WORLDWIDE TERM AND ONDITION, PEIFIALLY THE WARRANTY THEREIN, WHIH OER THEE PRODUT. LIFE UPPORT POLIY FAIRHILD PRODUT ARE NOT AUTHORIZED FOR UE A RITIAL OMPONENT IN LIFE UPPORT DEIE OR YTEM WITHOUT THE EXPRE WRITTEN APPROAL OF FAIRHILD EMIONDUTOR ORPORATION. As used herein:. Life supprt devices r systems are devices r systems which, (a) are intended fr surgical implant int the bdy r (b) supprt r sustain life, and (c) whse failure t perfrm when prperly used in accrdance with instructins fr use prvided in the labeling, can be reasnably expected t result in a significant injury f the user.. A critical cmpnent in any cmpnent f a life supprt, device, r system whse failure t perfrm can be reasnably expected t cause the failure f the life supprt device r system, r t affect its safety r effectiveness. ANTI-OUNTERFEITING POLIY Fairchild emicnductr rpratin's Anti-unterfeiting Plicy. Fairchild's Anti-unterfeiting Plicy is als stated n ur external website, under ales upprt. unterfeiting f semicnductr parts is a grwing prblem in the industry. All manufacturers f semicnductr prducts are experiencing cunterfeiting f their parts. ustmers wh inadvertently purchase cunterfeit parts experience many prblems such as lss f brand reputatin, substandard perfrmance, failed applicatins, and increased cst f prductin and manufacturing delays. Fairchild is taking strng measures t prtect urselves and ur custmers frm the prliferatin f cunterfeit parts. Fairchild strngly encurages custmers t purchase Fairchild parts either directly frm Fairchild r frm Authrized Fairchild Distributrs wh are listed by cuntry n ur web page cited abve. Prducts custmers buy either frm Fairchild directly r frm Authrized Fairchild Distributrs are genuine parts, have full traceability, meet Fairchild's quality standards fr handling and strage and prvide access t Fairchild's full range f up-t-date technical and prduct infrmatin. Fairchild and ur Authrized Distributrs will stand behind all warranties and will apprpriately address any warranty issues that may arise. Fairchild will nt prvide any warranty cverage r ther assistance fr parts bught frm Unauthrized urces. Fairchild is cmmitted t cmbat this glbal prblem and encurage ur custmers t d their part in stpping this practice by buying direct r frm authrized distributrs. PRODUT TATU DEFINITION Definitin f Terms Datasheet Identificatin Prduct tatus Definitin Advance Infrmatin Frmative / In Design Datasheet cntains the design specificatins fr prduct develpment. pecificatins may change in any manner withut ntice. Preliminary First Prductin Datasheet cntains preliminary data; supplementary data will be published at a later date. Fairchild emicnductr reserves the right t make changes at any time withut ntice t imprve design. N Identificatin Needed Full Prductin Datasheet cntains final specificatins. Fairchild emicnductr reserves the right t make changes at any time withut ntice t imprve the design. Obslete Nt In Prductin Datasheet cntains specificatins n a prduct that is discntinued by Fairchild emicnductr. The datasheet is fr reference infrmatin nly. Rev. I7 Fairchild emicnductr rpratin

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