E C B E. TO-92 SOT-23 Mark: 1S. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

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1 PN2369A MMBT2369A PN2369A / MMBT2369A E B E TO-92 SOT-23 Mark: 1S B NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 1 ma to 1 ma. Sourced from Process 21. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol Parameter alue Units EO ollector-emitter oltage 15 BO ollector-base oltage 4 EBO Emitter-Base oltage 4.5 I ollector urrent - ontinuous 2 ma T J, T stg Operating and Storage Junction Temperature Range -55 to +15 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 15 degrees. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal haracteristics TA = 25 unless otherwise noted Symbol haracteristic Max Units PN2369A MMBT2369A* P D Total Device Dissipation Derate above mw mw/ R θj Thermal Resistance, Junction to ase 125 /W R θja Thermal Resistance, Junction to Ambient /W *Device mounted on FR-4 PB 1.6" X 1.6" X.6." 1997 Fairchild Semiconductor orporation

2 Electrical haracteristics TA = 25 unless otherwise noted OFF HARATERISTIS (BR)EO ollector-emitter Breakdown oltage* I = 1 ma, I B = 15 (BR)ES ollector-emitter Breakdown oltage I = 1 µa, BE = 4 (BR)BO ollector-base Breakdown oltage I = 1 µa, I E = 4 (BR)EBO Emitter-Base Breakdown oltage I E = 1 µa, I = 4.5 I BO ollector utoff urrent B = 2, I E = B = 2, I E =, T A = 125 NPN Switching Transistor (continued) Symbol Parameter Test onditions Min Max Units.4 3 µa µa PN2369A / MMBT2369A ON HARATERISTIS h FE D urrent Gain* I = 1 ma, E = 1. I = 1 ma, E =.35,T A =-55 I = 1 ma, E = 1. E(sat) ollector-emitter Saturation oltage* I = 1 ma, I B = 1. ma I = 1 ma, I B = 1. ma,t A =125 I = 3 ma, I B = 3. ma I = 1 ma, I B = 1 ma BE(sat) Base-Emitter Saturation oltage I = 1 ma, I B = 1. ma I = 1 ma, I B = 1. ma,t A = -55 I = 1 ma, I B = 1. ma,t A= 125 I = 3 ma, I B = 3. ma I = 1 ma, I B = 1 ma SMALL SIGNAL HARATERISTIS obo Output apacitance B = 5., I E =, f = 1. MHz 4. pf ibo Input apacitance EB =.5, I =, f = 1. MHz 5. pf h fe Small-Signal urrent Gain I = 1 ma, E = 1, R G = 2. kω, f = 1 MHz 5. SWITHING HARATERISTIS t s Storage Time I = I B2 = I = 1 ma 13 ns t on Turn-On Time = 3., I = 1 ma, 12 ns I = 3. ma t off Turn-Off Time = 3., I = 1 ma, I = 3. ma, I B2 = 1.5 ma 18 ns *Pulse Test: Pulse Width 3 µs, Duty ycle 2.% Spice Model NPN (Is=44.14f Xti=3 Eg=1.11 af=1 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2 Isc= Ikr= Rc=.6 jc=2.83p Mjc=86.19m jc=.75 Fc=.5 je=4.5p Mje=.2418 je=.75 Tr=1.73u Tf=227.6p Itf=.3 tf=4 Xtf=4 Rb=1)

3 Typical haracteristics h - D URRENT GAIN FE D urrent Gain vs ollector urrent = 1. E I - OLLETOR URRENT (ma) OLLETOR-EMITTER OLTAGE () ESAT ollector- Emitter Saturation oltage vs ollector urrent β = NPN Switching Transistor (continued) I - OLLETOR URRENT (ma) 125 PN2369A / MMBT2369A - BASE-EMITTER OLTAGE () BESAT Base-Emitter Saturation oltage vs ollector urrent - 4 β = I - OLLETOR URRENT (ma) - BASE-EMITTER ON OLTAGE () BE(O N) Base-Emitter ON oltage vs ollector urrent I - OLLETOR URRENT (ma) = 1. E I - OLLETOR URRENT (na) BO ollector-utoff urrent vs Ambient Temperature B= T A - AMBIENT TEMPERATURE ( )

4 Typical haracteristics (continued) APAITANE (pf) ibo obo Output apacitance vs Reverse Bias oltage F = 1.MHz SWITHING TIMES (ns) NPN Switching Transistor (continued) Switching Times vs ollector urrent = 3. I = 1 I = I B2 = 1 t s d t s r t s f t s PN2369A / MMBT2369A REERSE BIAS OLTAGE () I - OLLETOR URRENT (ma) SWITHING TIMES (ns) Switching Times vs Ambient Temperature t s f t s 6 t s d 4 t s r 2 I = 1 ma, I = 3. ma, I B2 = 1.5 ma, = T - AMBIENT TEMPERATURE ( ) A I - TURN OFF BASE URRENT (ma) B Storage Time vs Turn On and Turn Off Base urrents I = 1 ma = 3. t = 3. ns s 6. ns 4. ns I - TURN ON BASE URRENT (ma) I - TURN OFF BASE URRENT (ma) B Storage Time vs Turn On and Turn Off Base urrents I = 1 ma = 3. t = 3. ns s 6. ns 4. ns I - TURN ON BASE URRENT (ma) I - TURN OFF BASE URRENT (ma) B Storage Time vs Turn On and Turn Off Base urrents I = 1 ma = 3. t S= 3. ns 4. ns 6. ns 16. ns 8. ns I - TURN ON BASE URRENT (ma)

5 Typical haracteristics (continued) I - TURN OFF BASE URRENT (ma) B Fall Time vs Turn On and Turn Off Base urrents I = 1 ma = 3. t = 7. ns f 8. ns 1 ns I - TURN ON BASE URRENT (ma) I - TURN OFF BASE URRENT (ma) B Fall Time vs Turn On and Turn Off Base urrents I = 3 ma = 3. t f = 2. ns I - TURN ON BASE URRENT (ma) NPN Switching Transistor (continued) 3. ns 4. ns 5. ns PN2369A / MMBT2369A I - TURN OFF BASE URRENT (ma) B Fall Time vs Turn On and Turn Off Base urrents I = 1 ma = 3. t = 2. ns f I - TURN ON BASE URRENT (ma) 3. ns 4. ns 8. ns 12. ns - BASE-EMITTER OFF OLTAGE () BE(O) Delay Time vs Base-Emitter OFF oltage and Turn On Base urrent I = 1 ma = 3. t d = 8. ns I - TURN ON BASE URRENT (ma) 5. ns 4. ns 3. ns I - TURN ON BASE URRENT (ma) Rise Time vs. Turn On Base urrent and ollector urrent = 3. t = 2. ns r 5. ns 1 ns I - OLLETOR URRENT (ma) 2 ns P - POWER DISSIPATION (mw) D Power Dissipation vs Ambient Temperature TO-92 SOT TEMPERATURE ( )

6 Test ircuits - 1 Pulse generator IN Rise Time < 1 ns Source Impedance = 5Ω PW 3 ns Duty ycle < 2% IN IN.1 µf 56 Ω.23µF 'A' 5 Ω 5 Ω 89 Ω.1 µf 1 KΩ 91 Ω µf 1 µf 1.23µF NPN Switching Transistor (continued) OUT +6-4 t s 1% Pulse waveform at point ' A' 1% OUT PN2369A / MMBT2369A FIGURE 1: harge Storage Time Measurement ircuit IN t on ton Pulse generator IN Rise Time < 1 ns Source Impedance = 5Ω PW 3 ns Duty ycle < 2% 1% OUT 9% BB = - 3. IN = IN 22 Ω 3.3 KΩ 5 Ω 3.3 KΩ.23µF.5 µf.5 µf BB.1 µf.1 µf OUT 5 Ω.23µF = 3. IN OUT t off 1% 9% t off BB = 12 IN = To sampling oscilloscope input impedance = 5Ω Rise Time 1 ns FIGURE 2: t ON, t OFF Measurement ircuit

7 TO-92 Tape and Reel Data TO-92 Packaging onfiguration: Figure 1. FSINT sample FAIRHILD SEMIONDUTOR ORPORATION HTB:B LOT: BK7419 QTY: 1 TAPE and REEL OPTION See Fig 2. for various Reeling Styles NSID: PN2222N SPE: D/1: D9842 SPE RE: B2 FSINT QA RE: (FSINT) F63TNR sample LOT: BK7419 QTY: 2 FSID: PN222N SPE: D/1: D9842 QTY1: SPE RE: D/2: QTY2: PN: N/F: F (F63TNR)3 5 Reels per Intermediate Box F63TNR ustomized 375mm x 267mm x 375mm Intermediate Box ustomized TO-92 TNR/AMMO PAKING INFROMATION Packing Style Quantity EOL code Reel A 2, D26Z AMMO PAK OPTION See Fig 3. for 2 Ammo Pack Options E 2, D27Z Ammo M 2, D74Z P 2, D75Z Unit weight =.22 gm Reel weight with components = 1.4 kg Ammo weight with components = 1.2 kg Max quantity per intermediate box = 1, units 327mm x 158mm x 135mm Immediate Box ustomized 5 Ammo boxes per Intermediate Box F63TNR 333mm x 231mm x 183mm Intermediate Box FSINT ustomized (TO-92) BULK PAKING INFORMATION EOL ODE DESRIPTION LEADLIP DIMENSION QUANTITY J18Z TO-18 OPTION STD NO LEAD LIP 2. K / BOX J5Z TO-5 OPTION STD NO LEAD LIP 1.5 K / BOX NO EOL ODE L34Z TO-92 STANDARD STRAIGHT FOR: PKG 92, 94 (NON PROELETRON SERIES), 96 TO-92 STANDARD STRAIGHT FOR: PKG 94 (PROELETRON SERIES BXXX, BFXXX, BSRXXX), 97, 98 NO LEADLIP NO LEADLIP 2. K / BOX 2. K / BOX BULK OPTION See Bulk Packing Information table FSINT 2 units per EO7 box for std option Anti-static Bubble Sheets 114mm x 12mm x 51mm Immediate Box 5 EO7 boxes per intermediate Box 53mm x 13mm x 83mm Intermediate box ustomized FSINT 1, units maximum per intermediate box for std option 21 Fairchild Semiconductor orporation March 21, Rev.

8 TO-92 Tape and Reel Data, continued TO-92 Reeling Style onfiguration: Figure 2. Machine Option A (H) Machine Option E (J) Style A, D26Z, D7Z (s/h) Style E, D27Z, D71Z (s/h) TO-92 Radial Ammo Packaging onfiguration: Figure 3. FIRST WIRE OFF IS OLLETOR ADHESIE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP FIRST WIRE OFF IS EMITTER ADHESIE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM ORDER STYLE D74Z (M) ORDER STYLE D75Z (P) FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM FIRST WIRE OFF IS OLLETOR (ON PKG. 92) ADHESIE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP September 1999, Rev. B

9 TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension onfiguration: Figure 4. P Pd Hd b Ha H1 HO L1 d L S W1 WO W2 t W t1 P1 F1 P2 DO ITEM DESRIPTION SYMBOL DIMENSION PO Base of Package to Lead Bend b.98 (max) User Direction of Feed omponent Height Lead linch Height Ha HO.928 (+/-.25).63 (+/-.2) omponent Base Height H1.748 (+/-.2) omponent Alignment ( side/side ) Pd.4 (max) omponent Alignment ( front/back ) Hd.31 (max) omponent Pitch P.5 (+/-.2) Feed Hole Pitch PO.5 (+/-.8) Hole enter to First Lead P1.15 (+.9, -.1) Hole enter to omponent enter P2.247 (+/-.7) Lead Spread F1/F2.14 (+/-.1) Lead Thickness d.18 (+.2, -.3) ut Lead Length L.429 (max) Taped Lead Length L1.29 (+.51, -.52) Taped Lead Thickness t.32 (+/-.6) arrier Tape Thickness t1.21 (+/-.6) TO-92 Reel onfiguration: Figure 5. arrier Tape Width Hold - down Tape Width Hold - down Tape position Feed Hole Position W WO W1 W2.78 (+.2, -.19).236 (+/-.12).35 (max).36 (+/-.25) Sprocket Hole Diameter DO.157 (+.8, -.7) Lead Spring Out S.4 (max) Note : All dimensions are in inches. ELETROSTATI SENSITIE DEIES D4 D1 ITEM DESRIPTION SYSMBOL MINIMUM MAXIMUM F63TNR ustomized D2 Reel Diameter D Arbor Hole Diameter (Standard) D (Small Hole) D ore Diameter D Hub Recess Inner Diameter D Hub Recess Depth W W2 W1 W3 Flange to Flange Inner Width W Hub to Hub enter Width W3 2.9 Note: All dimensions are inches D3 July 1999, Rev. A

10 TO-92 Package Dimensions TO-92 (FS PKG ode 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): Fairchild Semiconductor International January 2, Rev. B

11 SOT-23 Tape and Reel Data SOT-23 Packaging onfiguration: Figure 1. ustomized Human Readable Antistatic over Tape Embossed arrier Tape Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3, units per 7" or 177cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 1, units per 13" or 33cm diameter reel. This and some other options are described in the Packaging Information table. These full reels are individually labeled and placed inside a standard intermediate made of recyclable corrugated brown paper with a Fairchild logo printing. One pizza box contains eight reels maximum. And these intermediate boxes are placed inside a labeled shipping box which comes in different sizes depending on the number of parts shipped. 3P 3P 3P 3P SOT-23 Packaging Information Packaging Option Standard (no flow code) D87Z Packaging type TNR TNR Qty per Reel/Tube/Bag 3, 1, Reel Size 7" Dia 13" Box Dimension (mm) 187x17x x343x64 Max qty per Box 24, 3, Weight per unit (gm) Weight per Reel (kg) mm x 342mm x 64mm Intermediate box for L87Z Option SOT-23 Unit Orientation Human Readable Note/omments Human Readable sample SOT-23 Tape Leader and Trailer onfiguration: Figure 2. Human readable 187mm x 17mm x 183mm Intermediate Box for Standard Option arrier Tape over Tape Trailer Tape 3mm minimum or 75 empty pockets omponents Leader Tape 5mm minimum or 125 empty pockets 2 Fairchild Semiconductor International September 1999, Rev.

12 SOT-23 Tape and Reel Data, continued SOT-23 Embossed arrier Tape onfiguration: Figure 3. T P P2 D D1 E1 B Wc F E2 W Tc K P1 A User Direction of Feed Dimensions are in millimeter Pkg type A B W D D1 E1 E2 F P1 P K T Wc Tc SOT-23 (8mm) / / / / / / min 3.5 +/ / / / / / /-.2 Notes: A, B, and K dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and ). 2 deg maximum.5mm maximum B Typical component cavity center line.5mm maximum 2 deg maximum component rotation Sketch A (Side or Front Sectional iew) omponent Rotation SOT-23 Reel onfiguration: Figure 4. A Sketch B (Top iew) omponent Rotation Typical component center line Sketch (Top iew) omponent lateral movement W1 Measured at Hub Dim A Max Dim A max Dim N 7" Diameter Option See detail AA B Min Dim See detail AA W3 Dim D min 13" Diameter Option W2 max Measured at Hub DETAIL AA Tape Size Reel Option Dimensions are in inches and millimeters Dim A Dim B Dim Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) 8mm 7" Dia / / / / mm 13" Dia / / / / September 1999, Rev.

13 SOT-23 Package Dimensions SOT-23 (FS PKG ode 49) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram):.82 2 Fairchild Semiconductor International September 1998, Rev. A1

14 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. AEx Bottomless oolfet ROSSOLT DOME E 2 MOS TM EnSigna TM FAT FAT Quiet Series FAST DISLAIMER LIFE SUPPORT POLIY FAIRHILD S PRODUTS ARE NOT AUTHORIZED FOR USE AS RITIAL OMPONENTS IN LIFE SUPPORT DEIES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROAL OF FAIRHILD SEMIONDUTOR ORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUT STATUS DEFINITIONS Definition of Terms FASTr GlobalOptoisolator GTO HiSe ISOPLANAR MIROWIRE OPTOLOGI OPTOPLANAR PAMAN POP PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITHER SMART START SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UH X FAIRHILD SEMIONDUTOR RESERES THE RIGHT TO MAKE HANGES WITHOUT FURTHER NOTIE TO ANY PRODUTS HEREIN TO IMPROE RELIABILITY, FUNTION OR DESIGN. FAIRHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLIATION OR USE OF ANY PRODUT OR IRUIT DESRIBED HEREIN; NEITHER DOES IT ONEY ANY LIENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G

PN4258. Symbol Parameter Value Units

PN4258. Symbol Parameter Value Units PN8 PN8 PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to ma. Sourced from process 6. TO-9. Emitter. Base 3. ollector Absolute Maximum Ratings*