MCT5201M, MCT5210M, MCT5211M Low Input Current Phototransistor Optocouplers

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1 MCT52M, MCT52M, MCT52M Low Input Current Phototransistor Optocouplers Features High CTR CE(SAT) comparable to Darlingtons CTR guaranteed C to 7 C High common mode transient rejection 5kV/µs Data rates up to 5kbits/s (NRZ) Underwriters Laboratory (UL) recognized, file #E97, volume 2 IEC approved (ordering option V) Applications CMOS to CMOS/LSTTL logic isolation LSTTL to CMOS/LSTTL logic isolation RS-232 line receiver Telephone ring detector AC line voltage sensing Switching power supply Schematic ANODE CATHODE 2 6 BASE 5 COL Description September 29 The MCT52XXM series consists of a high-efficiency AlGaAs, infrared emitting diode, coupled with an NPN phototransistor in a six pin dual-in-line package. The MCT52XXM is well suited for CMOS to LSTT/TTL interfaces, offering 25% CTR CE(SAT) with ma of LED input current. When an LED input current of.6ma is supplied data rates to 2K bits/s are possible. The MCT52XXM can easily interface LSTTL to LSTTL/ TTL, and with use of an external base to emitter resistor data rates of K bits/s can be achieved. Package Outlines 3 4 EMITTER MCT52M, MCT52M, MCT52M Rev...3

2 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameters Value Units TOTAL DEVICE T STG Storage Temperature -55 to +5 C T OPR Operating Temperature -4 to + C T SOL Lead Solder Temperature 26 for sec C P D Total Device Power 25 C (LED plus detector) 26 mw Derate Linearly From 25 C 3.5 mw/ C EMITTER I F Continuous Forward Current 5 ma V R Reverse Input Voltage 6 V I F (pk) Forward Current - Peak ( µs pulse, 3 pps) 3. A P D LED Power Dissipation 75 mw Derate Linearly From 25 C. mw/ C DETECTOR I C Continuous Collector Current 5 ma P D Detector Power Dissipation 5 mw Derate Linearly from 25 C 2. mw/ C MCT52M, MCT52M, MCT52M Rev...3 2

3 Electrical Characteristics (T A = 25 C unless otherwise specified) Individual Component Characteristics Symbol Parameters Test Conditions Device Min. Typ.* Max. Units EMITTER V F Input Forward Voltage All.25.5 V V F T A Forward Voltage Temp. Coefficient I F = 2mA All -.75 mv/ C V R Reverse Voltage I R = µa All 6 V C J Junction Capacitance V F = V, f =.MHz All 8 pf DETECTOR BV CEO Collector-Emitter Breakdown Voltage I C =.ma, I F = All 3 V BV CBO Collector-Base Breakdown Voltage I C = µa, I F = All 3 2 V BV EBO Emitter-Base Breakdown Voltage I E = µa, I F = All 5 V I CER Collector-Emitter Dark Current V CE = V, I F =, All na R BE = MΩ C CE Capacitance, Collector to Emitter V CE =, f = MHz All pf C CB Capacitance, Collector to Base V CB =, f = MHz All 8 pf C EB Capacitance, Emitter to Base V EB =, f = MHz All 5 pf Isolation Characteristics Symbol Characteristic Test Conditions Device Min. Typ.* Max. Units f = 6Hz, t = sec. All 75 Vac(peak) V ISO Input-Output Isolation Voltage () R ISO Isolation Resistance () V I-O = 5 VDC, T A = 25 C All Ω C ISO Isolation Capacitance (9) V I-O =, f = MHz All.4.6 pf CM H Common Mode Transient V CM = 5 V P-P, R L = 75Ω, MCT52M/M 5 V/µs I F = Rejection Output HIGH V CM = 5 V P-P, R L = KΩ, MCT52M I F = CM L Common Mode Transient V CM = 5 V P-P, R L = 75Ω, MCT52M/M 5 V/µs I F =.6mA Rejection Output LOW V CM = 5 V P-P, R L = KΩ, MCT52M *All typical T A = 25 C MCT52M, MCT52M, MCT52M Rev...3 3

4 Electrical Characteristics (Continued) (T A = 25 C unless otherwise specified) Transfer Characteristics Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units DC CHARACTERISTICS CTR CE(SAT) Saturated Current Transfer Ratio () (Collector to Emitter) *All typicals at T A = 25 C, V CE =.4V MCT52M 2 % I F = 3.mA, V CE =.4V MCT52M 6 I F =.6mA, V CE =.4V MCT52M I F =.ma, V CE =.4V 75 I = 3.mA, V = 5.V MCT52M 7 % I = 5mA, V = 4.3V MCT52M.28 % R = 33 Ω, R = I = 3.mA, R = 33 Ω, R = I = 3.mA, CTR (CE) Current Transfer Ratio (Collector to Emitter) () F CE I F =.6mA, V CE = 5.V MCT52M 5 I F =.ma, V CE = 5.V CTR (CB) Current Transfer Ratio Collector to Base (2) F CB I F = 3.mA, V CE = 4.3V MCT52M.2 I F =.6mA, V CE = 4.3V MCT52M.3 I F =.ma, V CE = 4.3V.25 V CE(SAT) Saturation Voltage, I CE = 6mA MCT52M.4 V I F = 3.mA, I CE =.8mA MCT52M.4 I F =.6mA, I CE =.6mA MCT52M.4 AC CHARACTERISTICS T PHL Propagation Delay MCT52M µs HIGH-to-LOW (3) L BE R L = 3.3 kω, R BE = 39kΩ F V CC = 5.V 7 R L = 75 Ω, R BE = I F =.6mA, MCT52M 4 R L = 4.7 kω, R BE = 9kΩ V CC = 5.V 5 R L =.5 kω, R BE = I F =.ma, 7 R L = kω, R BE = 6kΩ V CC = 5.V 24 V CE =.4V, V CC = 5V, R L = fig. 3, R BE = 33kΩ MCT52M 3 3 T PLH Propagation Delay MCT52M.4 µs LOW-to-HIGH (4) L BE R L = 3.3 kω, R BE = 39kΩ F V CC = 5.V 8 R L = 75 Ω, R BE = I F =.6mA, MCT52M 2.5 R L = 4.7 kω, R BE = 9kΩ V CC = 5.V R L =.5 kω, R BE = I F =.ma, 7 R L = kω, R BE = 6kΩ V CC = 5.V 6 V CE =.4V, V CC = 5V, R L = fig. 3, R BE = 33kΩ MCT52M 2 3 t d Delay Time (5) V CE =.4V, R BE = 33kΩ, MCT52M. 5 µs R L = kω, V CC = 5V t r Rise Time (6) V CE =.4V, R BE = 33kΩ, MCT52M µs R L = kω, V CC = 5V t s Storage Time (7) V CE =.4V, R BE = 33 kω, MCT52M 3 µs R L = kω, V CC = 5V t f Fall Time (8) V CE =.4V, R BE = 33 kω, MCT52M 6 3 µs R L = kω, V CC = 5V MCT52M, MCT52M, MCT52M Rev...3 4

5 Notes:. DC Current Transfer Ratio (CTR CE ) is defined as the transistor collector current (I CE ) divided by the input LED current (I F ) x %, at a specified voltage between the collector and emitter (V CE ). 2. The collector base Current Transfer Ratio (CTR CB ) is defined as the transistor collector base photocurrent(i CB ) divided by the input LED current (I F ) time %. 3. Referring to Figure 4 the T PHL propagation delay is measured from the 5% point of the rising edge of the data input pulse to the.3v point on the falling edge of the output pulse. 4. Referring to Figure 4 the T PLH propagation delay is measured from the 5% point of the falling edge of data input pulse to the.3v point on the rising edge of the output pulse. 5. Delay time (t d ) is measured from 5% of rising edge of LED current to 9% of Vo falling edge. 6. Rise time (t r ) is measured from 9% to % of Vo falling edge. 7. Storage time (t s ) is measured from 5% of falling edge of LED current to % of Vo rising edge. 8. Fall time (t f ) is measured from % to 9% of Vo rising edge. 9. C ISO is the capacitance between the input (pins, 2, 3 connected) and the output, (pin 4, 5, 6 connected).. Device considered a two terminal device: Pins, 2, and 3 shorted together, and pins 5, 6 and 7 are shorted together. MCT52M, MCT52M, MCT52M Rev...3 5

6 Safety and Insulation Ratings As per IEC , this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE /.89 Table For Rated Main Voltage < 5Vrms I-IV For Rated Main voltage < 3Vrms I-IV Climatic Classification 55//2 Pollution Degree (DIN VDE /.89) 2 CTI Comparative Tracking Index 75 V PR Input to Output Test Voltage, Method b, V IORM x.875 = V PR, % Production Test with tm = sec, Partial Discharge < 5pC 594 V peak Input to Output Test Voltage, Method a, V IORM x.5 = V PR, Type and Sample Test with tm = 6 sec, Partial Discharge < 5pC 275 V peak V IORM Max. Working Insulation Voltage 85 V peak V IOTM Highest Allowable Over Voltage 6 V peak External Creepage 7 mm External Clearance 7 mm Insulation Thickness.5 mm RIO Insulation Resistance at Ts, V IO = 5V 9 Ω MCT52M, MCT52M, MCT52M Rev...3 6

7 Typical Performance Curves VF FORWARD VOLTAGE (V) NORMALIZED CURRENT TRANSFER RATIO NORMALIZED I CB COLLECTOR-BASE PHOTO CURRENT Fig. LED Forward Voltage vs. Forward Current I F LED FORWARD CURRENT (ma) Fig. 3 Normalized CTR vs. Temperature Fig. 5 Normalized Collector Base Photocurrent Ratio vs. Forward Current. T A = -4 C T A = 25 C T A = C Normalized to: V CE = 5V T A = 25 C I F = ma I F = 2mA I F = ma I F =.5mA I F =.2mA Normalized to: V CB = 4.3V T A = 25 C.. I F FORWARD CURRENT (ma) NORMALIZED ICE COLLECTOR-EMITTER CURRENT NORMALIZED CURRENT TRANSFER RATIO.. NORMALIZED COLLECTOR-BASE CURRENT Fig. 2 Normalized Current Transfer Ratio vs. Forward Current I F FORWARD CURRENT (ma) Fig. 4 Normalized Collector vs. Collector-Emitter Voltage I F = ma I F = 2mA I F = ma I F =.5mA I F =.2mA Normalized to:. V CE = 5V T A = 25 C.. V CE COLLECTOR-EMITTER VOLTAGE (V) Fig. 6 Normalized Collector-Base Current vs. Temperature I F = ma I F = ma I F =.5mA I F = 2mA. Normalized to: I F =.2mA V CB = 4.3V T A = 25 C Normalized to: V CE = 5V T A = 25 C MCT52M, MCT52M, MCT52M Rev...3 7

8 Typical Performance Curves (Continued) ICEO DARK CURRENT (na) t SWITCHING TIME (µs) t SWITCHING TIME (µs) Fig. 7 Collector-Emitter Dark Current vs. Ambient Temperature I F = ma V CE = V Fig. 9 Switching Time vs. Ambient Temperature 5 tr t PHL td I F = ma Refer to Figure 3 for switching time circuit V CC = 5V R L = kω R BE = kω V CC = 5V R L = kω R BE = kω t f t PLH ts Fig. Switching Time vs. Ambient Temperature Refer to Figure 3 for switching time circuit tf t PLH t s Fig. 8 Switching Time vs. Ambient Temperature t r t PHL td tr t PHL t d t SWITCHING TIME (µs) t SWITCHING TIME (µs) t SWITCHING TIME (µs) Fig. Switching Time vs. Ambient Temperature 4 t r t PHL td I F = ma V CC = 5V R L = kω R BE = 33kΩ V CC = 5V R L = kω R BE = 33kΩ t PLH I F = 3mA R L = 3.3kΩ V CC = 5V T A = 25 C Refer to Figure 3 for switching time circuit tf tplh t f tplh Fig. 2 Switching Time vs. Base-Emitter Resistance R BE BASE-EMITTER RESISTANCE (kω) 2 ts Refer to Figure 3 for switching time circuit t PLH I F =.6mA R L = 4.7kΩ ts tplh, I F = ma, R L = kω t PHL, I F = ma, R L = kω tphl, I F =.6mA, R L = 4.7kΩ t PHL, I F = 3mA, R L = 3.3kΩ MCT52M, MCT52M, MCT52M Rev...3 8

9 Typical Electro-Optical Characteristics (T A = 25 C unless otherwise specified) Pulse Gen Z O = 5Ω f = KHz % D.F. I F monitor Ω 33K t r, t f, t d, t s TEST CIRCUIT INPUT (I F ) OUTPUT (V O ) V CC = 5. V K 5% t d V O t PHL Figure 3. Pulse Gen Z O = 5Ω f = KHz % D.F. I F monitor Ω.3 V.3 V % % V CC = 5. V 33K V O t PHL, t PLH TEST CIRCUIT 9% 9% t r t PLH Figure 4. Switching Circuit Waveforms t s t f K 4.7K D D2 D3 D4 MCT52M, MCT52M, MCT52M Rev...3 9

10 Package Dimensions Through Hole Pin 5.8 (Max.) (Min.) (.86) (Bsc) 5 (Typ.) 7.62 (Typ.) Surface Mount Pin " Lead Spacing Pin 5.8 (Max.) (Min.) (.86) 2.54 (Bsc) (.78) (.52) (2.54) (7.49) (.54) (.76) Rcommended Pad Layout (Max.) (Min.) (.86) 2.54 (Bsc).6.88 (8.3) Note: All dimensions in mm. MCT52M, MCT52M, MCT52M Rev...3

11 Ordering Information Option Order Entry Identifier (Example) Description No suffix MCT52M Standard Through Hole Device (5 units per tube) S MCT52SM Surface Mount Lead Bend SR2 MCT52SR2M Surface Mount; Tape and Reel (, units per reel) T MCT52TM.4" Lead Spacing V MCT52VM IEC TV MCT52TVM IEC ,.4" Lead Spacing SV MCT52SVM IEC , Surface Mount SR2V MCT52SR2VM IEC , Surface Mount, Tape and Reel (, units per reel) Marking Information Definitions V MCT52 X YY Q Fairchild logo 2 Device number VDE mark (Note: Only appears on parts ordered with VDE 3 option See order entry table) 4 One digit year code, e.g., 7 5 Two digit work week ranging from to 53 6 Assembly package code *Note Parts that do not have the V option (see definition 3 above) that are marked with date code 325 or earlier are marked in portrait format. 2 6 MCT52M, MCT52M, MCT52M Rev...3

12 Carrier Tape Specification Reflow Profile 4.5 ±.2 2. ± C ±.5 User Direction of Feed 4. ±.. MAX. ±.2 2. ±. 2. ± C/Sec Ramp up rate 33 Sec Time (s) 26 C Time above 83 C = 9 Sec Ø.5 MIN.75 ±..5 ±. 24. ±.3 9. ±.2 Ø.5 ±./- >245 C = 42 Sec 36 MCT52M, MCT52M, MCT52M Rev...3 2

13 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries,and is not intended to be an exhaustive list of all such trademarks. Auto-SPM Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH * * Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR PDP SPM Power-SPM PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. Saving our world, mw/w/kw at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT * µserdes UHC Ultra FRFET UniFET VCX VisualMax XS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERSTHESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical andproduct information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative / In Design First Production Full Production Not In Production Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. MCT52M, MCT52M, MCT52M Rev Rev. I4

CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M, MOC8107M Phototransistor Optocouplers

CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M, MOC8107M Phototransistor Optocouplers Features UL recognized (File # E90700, Vol. 2) VDE recognized Add option V (e.g.,