Phototransistor. Industry Standard Single Channel 6 Pin DIP Optocoupler

Transcription

1 Phototransistor Industry Standard Single Channel 6 Pin DIP Optocoupler DEVICE TYPES Part No. CTR % Min. Part No. CTR % Min. 4N25 2 MCT2 2 4N26 2 MCT2E 2 4N27 MCT27 5 4N28 MCT N35 MCT N36 MCT N37 MCT N38 MCT HA 5 MCT HA2 2 MCT277 HA3 2 HA4 HA5 3 FEATURES Interfaces with Common Logic Families Input-output Coupling Capacitance < pf Industry Standard Dual-in-line 6-pin Field Effect Stable by TRIOS 53 V RMS Isolation Test Voltage Underwriters Laboratory File #E52744 V VDE #884 Approval Available with Option D E APPLICATIONS AC Mains Detection Reed Relay Driving Switch Mode Power Supply Feedback Telephone Ring Detection Logic Ground Isolation Logic Coupling with High Frequency Noise Rejection Notes: Designing with data sheet is covered in Application Note 45. Dimensions in Inches (mm).248 (6.3).256 (6.5).39 (.) Min. 4 typ..8 (.45).22 (5) 3 DESCRIPTION 2 pin one ID.3 (.8) min..3 (.8).35 (.9). (2.54) typ. Anode Cathode NC.335 (8.5).343 (8.7).48 (.45).22 (5).3 (3.3).5 (3.8) (7.62) typ.. (.25) typ ( ).4 (2.9).3 (3.) This data sheet presents five families of Vishay Industry Standard Single Channel Phototransistor Couplers. These families include the 4N25/26/27/28 types, the 4N35/36/37/38 couplers, the HA/A2/ A3/A4/A5, the MCT2/2E, and MCT27/27/272/273/274/275/276/ 277 devices.each optocoupler consists of Gallium Arsenide infrared LED and a silicon NPN phototransistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 53 V RMS Isolation Test Voltage. This isolation performance is accomplished through Vishay double molding isolation manufacturing process. Compliance to VDE 884 partial discharge isolation specification is available for these families by ordering option. Phototransistor gain stability, in the presence of high isolation voltages, is insured by incorporating a TRansparent lon Shield (TRIOS) on the phototransistor substrate. These isolation processes and the Vishay IS9 Quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers Base Collector Emitter Document Number: 8377 Revision 7-August- 2 53

2 Maximum Ratings T A = Emitter Reverse Voltage V Forward Current... 6 ma Surge Current (t µs) A Power Dissipation... mw Collector-Emitter Breakdown Voltage... 7 V Emitter-Base Breakdown Voltage V Collector Current... 5 ma Collector Current(t <. ms)... ma Power Dissipation... 5 mw Isolation Test Voltage V RMS Creepage mm Clearance mm Isolation Thickness between Emitter and....4 mm Comparative Tracking Index per DIN IEC 2/VDE33, part Isolation Resistance V IO =5 V, T A =... 2 Ω V IO =5 V, T A = C... Ω Storage Temperature C to +5 C Operating Temperature C to + C Junction Temperature... C Soldering Temperature (max. s, dip soldering: distance to seating plane.5 mm) C 4N25/26/27/28 Characteristics T A = Forward Voltage* V F.3.5 V I F =5 ma Reverse Current* I R. µa V R =3. V Capacitance C O 25 pf V R = Breakdown Voltage* Collector-Emitter BV CEO 3 V I C =. ma I CEO (dark)* * Indicates JEDEC registered values Emitter-Collector BV ECO 7. I E = µa Collector-Base BV CBO 7 I C = µa 4N25/26/27 4N28 5. Document Number: 8377 Revision 7-August na V CE = V, (base open) I CBO (dark)* 2. 2 na V CB = V, (emitter open) Capacitance, Collector-Emitter C CE 6. pf V CE = DC Current Transfer Ratio* 4N25/26 CTR 2 5 % V CE = V, I F = ma 4N27/28 3 Isolation Voltage* 4N25 V IO 25 V Peak, 6 Hz 4N26/27 5 4N28 5 Saturation Voltage, Collector-Emitter V CE(sat) V I CE =2. ma, I F =5 ma Resistance, Input to Output* R IO GΩ V IO =5 V Coupling Capacitance C IO pf f=. MHz Rise and Fall Times t r, t f 2. µs I F = ma V CE = V, R L = Ω

3 4N35/36/37/38 Characteristics T A =.3.5 V I F = ma Forward Voltage* V F.9.7 I F = ma, T A = 55 C Reverse Current* I R. µa V R =6. V Capacitance C O 25 pf V R =, f=. MHz Breakdown Voltage, Collector-Emitter* 4N35/36/37 BV CEO 3 V I C =. ma 4N38 8 Breakdown Voltage, Emitter-Collector* BV ECO 7. V I E = µa Breakdown Voltage, Collector-Base* 4N35/36/37 BV CBO 7 V I C = µa, I B =. µa 4N38 8 Leakage Current, Collector-Emitter* 4N35/36/37 I CEO 5. 5 na V CE = V, I F = 4N38 5 V CE =6 V, I F = Leakage Current, Collector-Emitter* 4N35/36/37 I CEO 5 µa V CE =3 V, I F =, T A = C 4N38 6. V CE =6 V, I F =, T A = C Capacitance, Collector-Emitter C CE 6. pf V CE = DC Current Transfer Ratio* 4N35/36/37 CTR % V CE = V, I F = ma, 4N38 2 V CE =. V, I F =2 ma DC Current Transfer Ratio* 4N35/36/37 CTR 4 5 % V CE = V, I F = ma, 4N38 3 T A = 55 to C Resistance, Input to Output* R IO Ω V IO =5 V Coupling Capacitance C IO pf f=. MHz Switching Time* t ON, t OFF µs I C =2. ma, R L = Ω, V CC = V * Indicates JEDEC registered value HA through HA5 Characteristics T A = Forward Voltage HA HA4 V F..5 V I F = ma HA5..7 Reverse Current I R µa V R =3. V Capacitance C 5 pf V R =, f=. MHz Breakdown Voltage, Collector-Emitter BV CEO 3 V I C =. ma, I F = ma Breakdown Voltage, Emitter-Collector BV ECO 7. V I E = µa, I F = ma Breakdown Voltage, Collector-Base BV CBO 7 V I C = µa, I F = ma Leakage Current, Collector-Emitter I CEO 5. 5 na V CE = V, I F = ma Capacitance, Collector-Emitter C CE 6. pf V CE = DC Current Transfer Ratio HA CTR 5 % V CE = V, I F = ma HA2/3 2 HA4 HA5 3 Saturation Voltage, Collector-Emitter V CEsat.4 V I CE = ma, I F = ma Capacitance, Input to Output C IO pf Switching Time t ON, t OFF 3. µs I C =2. ma, R L = Ω, V CE = V Document Number: 8377 Revision 7-August- 2 55

4 MCT2/MCT2E Characteristics T A = Forward Voltage V F..5 V I F =2 ma Reverse Current I R µa V R =3. V Capacitance C O 25 pf V R =, f=. MHz Breakdown Voltage Collector-Emitter BV CEO 3 V I C =. ma, I F = ma Emitter-Collector BV ECO 7. I E = µa, I F = ma Collector-Base BV CBO 7 I C = µa, I F = ma Leakage Current Collector-Emitter I CBO 5. 5 na V CE = V, I F = Collector-Base I CBO 2 Capacitance, Collector-Emitter C CE pf V CE = DC Current Transfer Ratio CTR 2 6 % V CE = V, I F = ma Capacitance, Input to Output C IO pf Resistance, Input to Output R IO GΩ Switching Time t ON, t OFF 3. µs I C =2. ma, R L = Ω, V CE = V MCT27 through MCT277 Characteristics T A = Forward Voltage V F.5 V I F =2 ma Reverse Current I R µa V R =3. V Capacitance C O 25 pf V R =, f=. MHz Breakdown Voltage Collector-Emitter BV CEO 3 V I C = µa, I F = ma Emitter-Collector BV ECO 7. I E = µa, I F = ma Collector-Base BV CBO 7 I C = µa, I F = ma Leakage Current, Collector-Emitter I CEO 5 na V CE = V, I F = ma DC Current Transfer Ratio MCT27 CTR 5 % V CE = V, I F = ma MCT MCT MCT MCT MCT MCT MCT277 Current Transfer Ratio, Collector Emitter MCT CTR CE 2.5 % V CE =.4 V, I F =6 ma MCT277 4 Collector Emitter Saturation Voltage V CEsat.4 V I CE =2. ma, I F =6 ma Capacitance, Input to Output C IO pf Resistance, Input to Output R IO 2 Ω V IO =5 VDC Switching Time MCT27/272 t ON, t OFF µs I C =2. ma, MCT27 7. R L = Ω, V CE =5. V MCT273 2 MCT MCT275/277 5 MCT Document Number: 8377 Revision 7-August- 2 56

5 Figure. Forward Voltage vs. Forward Current Figure 4. Normalized Non-saturated and Saturated CTR, T A =7 C vs. LED Current V F - Forward Voltage - V T A = 55 C T A = T A = 85 C - Normalized CTR.5. Vce= V, I F = ma, T A = CTRce(sat) Vce=.4 V T A =7 C.7. I F - Forward Current - ma. Figure 2. Normalized Non-saturated and Saturated CTR, T A = vs. LED Current Figure 5. Normalized Non-saturated and Saturated CTR, T A =85 C vs. LED Current - Normlized CTR.5. Vce= V, I F = ma, T A = CTRce(sat) Vce=.4 V T A = - Normalized CTR.5.. Vce= V, I F = ma, T A = CTRce(sat) Vce =.4 V T A =85 C Figure 3. Normalized Non-saturated and Saturated CTR, T A =5 C vs. LED Current Figure 6. Collector-emitter Current vs. Temperature and LED Current - Normalized CTR.5.. Vce= V, I F = ma, T A = CTRce(sat) Vce=.4 V T A =5 C Ice - Collector Current - ma C 85 C C 6 Document Number: 8377 Revision 7-August- 2 57

6 Figure 7. Collector-emitter Leakage Current vs. Temp. 5 Iceo - Collector-Emitter - na Typical Figure 8. Normalized CTRcb vs. LED Current and Temp..5 Vcb=9.3 V, I F = ma, T A = cb - Normalized CTRcb. Figure 9. Normalized Photocurrent vs. I F and Temp. I F = ma, T A = Normalized Photocurrent 4 V ce = V 6 8 T A - Ambient Temperature - C 5 C 7 C.. Nib, T A = 2 C Nib, T A = Nib, T A = 5 C Nib, T A =7 C. Figure 3. Switching Timing Figure. Normalized Non-saturated HFE vs. Base Current and Temperature NHFE - Normalized HFE NHFE(sat) - Normalized Saturated HFE C 5 C 7 C Ib=2 µa, Vce= V, T A=.4 Ib - Base Current - µa Figure. Normalized HFE vs. Base Current and Temp..5 Vce= V, Ib=2 µa 5 C T A =. 7 C 2 C Vce=.4 V Ib - Base Current - µa Figure 2. Propagation Delay vs. Collector Load Resistor I F = ma, T A = 2.5 V CC =5. V, Vth=.5 V tplh - Propagation Delay - µs t PHL t PLH.. RL - Collector Load Resistor - kω Figure 4. Switching Schematic 2..5 tphl - Propagation Delay - µs I F V CC = 5. V V O t D t R t PLH V TH =.5 V I F = ma F= KHz, DF=5% R L V O t PHL t S t F Document Number: 8377 Revision 7-August- 2 58