FODM8801A, FODM8801B, FODM8801C OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package
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1 FODM88A, FODM88B, FODM88C OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Features Utilizing Proprietary Process Technology to Achieve High Operating Temperature: up to 5 C Guaranteed Current Transfer Ratio (CTR) Specifications Across Full Temperature Range Excellent CTR Linearity at High-Temperature CTR at Very Low Input Current, I F High Isolation Voltage Regulated by Safety Agency: C-UL / UL577, 375 VAC RMS for minute and DIN EN/IEC Compact Half-Pitch, Mini-Flat, 4-Pin Package (.7 mm Lead Pitch,.4 mm Maximum Standoff Height) > 5 mm Creepage and Clearance Distance Applicable to Infrared Ray Reflow, 45 C Applications Primarily Suited for DC-DC Converters Ground-Loop Isolation, Signal-Noise Isolation Communications Adapters, Chargers Consumer Appliances, Set-Top Boxes Industrial Power Supplies, Motor Control, Programmable Logic Control Schematic ANODE CATHODE Figure. Schematic 4 COLLECTOR 3 EMITTER Description In the OptoHiT series, the FODM88 is a first-of-kind phototransistor, utilizing ON Semiconductor s leading-edge proprietary process technology to achieve high operating temperature characteristics, up to 5 C. The opto-coupler consists of an aluminum gallium arsenide (AlGaAs) infrared lightemitting diode (LED) optically coupled to a phototransistor, available in a compact half-pitch, miniflat, 4-pin package. It delivers high current transfer ratio at very low input current. The input-output isolation voltage, V ISO, is rated at 375 VAC RMS. Package Figure. Half-Pitch Mini-Flat FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Semiconductor Components Industries, LLC. June-8, Rev. 3 Publication Order Number: FODM88A/D
2 Safety and Insulation Ratings As per DIN EN/IEC , this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics Installation Classifications per DIN VDE < 5 V RMS I IV /.89 Table, For Rated Mains Voltage < 3 V RMS I III Climatic Classification 4/5/ Pollution Degree (DIN VDE /.89) Comparative Tracking Index 75 Symbol Parameter Value Unit V PR Input-to-Output Test Voltage, Method A, V IORM x.6 = V PR, Type and Sample Test with t m = s, Partial Discharge < 5 pc 848 V peak Input-to-Output Test Voltage, Method B, V IORM x.875 = V PR, % Production Test with t m = s, Partial Discharge < 5 pc 6 V peak V IORM Maximum Working Insulation Voltage 565 V peak V IOTM Highest Allowable Over-Voltage 6 V peak External Creepage 5 mm External Clearance 5 mm DTI Distance Through Insulation (Insulation Thickness).5 mm T S Case Temperature () 5 C I S,INPUT Input Current () ma P S,OUTPUT Output Power () 3 mw R IO Insulation Resistance at T S, V IO = 5 V () > 9 Note:. Safety limit values maximum values allowed in the event of a failure. FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package
3 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. T A = 5 C unless otherwise specified. Symbol Parameter Value Unit Total Package T STG Storage Temperature -4 to +5 C T OPR Operating Temperature -4 to +5 C T J Junction Temperature -4 to +4 C T SOL Lead Solder Temperature 45 for s C Emitter I F(average) Continuous Forward Current ma V R Reverse Input Voltage 6 V PD LED Power Dissipation ()(4) 4 mw Detector I C(average) Continuous Collector Current 3 ma V CEO Collector-Emitter Voltage 75 V V ECO Emitter-Collector Voltage 7 V PD C Collector Power Dissipation (3)(4) 5 mw Notes:.Derate linearly from 73 C at a rate of.4 mw/ C 3.Derate linearly from 73 C at a rate of.3 mw/ C. 4.Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. ON Semiconductor does not recommend exceeding them or designing to absolute maximum ratings. Symbol Parameter Value Unit T A Operating Temperature -4 to +5 C V FL(OFF) Input Low Voltage -5. to +.8 V I FH Input High Forward Current to ma Isolation Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit V ISO Input-Output Isolation Voltage f = 6 Hz, t = min., I I-O µa (5)(6) 3,75 VAC RMS R ISO Isolation Resistance V I-O = 5 V (5) C ISO Isolation Capacitance f = MHz.3.5 pf FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Notes: 5.Device is considered a two-terminal device: pins and are shorted together and pins 3 and 4 are shorted together. 6.3,75 VAC RMS for minute is equivalent to 4,5 VAC RMS for second. 3
4 Electrical Characteristics Apply over all recommended conditions (T A = -4 C to +5 C unless otherwise specified). All typical values are measured at T A = 5 C. Symbol Parameter Conditions Min. Typ. Max. Unit Emitter V F Forward Voltage I F = ma V V F / T A Forward-Voltage Coefficient I F = ma -.6 mv / C Detector I R Reverse Current V R = 6 V µa C T Terminal Capacitance V = V, f = MHz 3 pf BV CEO BV ECO I CEO Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Dark Current I C =.5 ma, I F = ma 75 3 V I E = µa, I F = ma 7 V V CE = 75 V, I F = ma, T A = 5 C na V CE = 5 V, I F = ma 5 µa V CE = 5 V, I F = ma 3 µa C CE Capacitance V CE = V, f = MHz 8 pf FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package 4
5 Transfer Characteristics Apply over all recommended conditions (T A = -4 C to +5 C unless otherwise specified). All typical values are measured at T A = 5 C. Symbol Parameter Device Conditions Min. Typ. Max. Unit CTR CE CTR CE(SAT) V CE(SAT) Current Transfer Ratio (Collector-Emitter) Saturated Current Transfer Ratio (Collector-Emitter) Saturation Voltage FODM88A FODM88B FODM88C FODM88A FODM88B FODM88C FODM88A FODM88B FODM88C I F =. ma, V CE = 5 T A = 5 C 8 6 I F =. ma, V CE = 5 V 35 3 I F =.6 ma, V CE = 5 V 4 5 I F = 3. ma, V CE = 5 V I F =. ma, V CE = 5 T A = 5 C I F =. ma, V CE = 5 V I F =.6 ma, V CE = 5 V 7 I F = 3. ma, V CE = 5 V 75 5 I F =. ma, V CE = 5 T A = 5 C 3 4 I F =. ma, V CE = 5 V 3 56 I F =.6 ma, V CE = 5 V 3 I F = 3. ma, V CE = 5 V 5 33 I F =. ma, V CE =.4 T A = 5 C I F =. ma, V CE =.4 V 3 8 I F =.6 ma, V CE =.4 V 5 4 I F = 3. ma, V CE =.4 V 9 I F =. ma, V CE =.4 T A = 5 C I F =. ma, V CE =.4 V I F =.6 ma, V CE =.4 V 4 55 I F = 3. ma, V CE =.4 V 35 3 I F =. ma, V CE =.4 T A = 5 C I F =. ma, V CE =.4 V I F =.6 ma, V CE =.4 V 65 5 I F = 3. ma, V CE =.4 V I F =. ma, I C =.3 ma.7.4 I F =.6 ma, I C =.4 ma.6.4 I F = 3. ma, I C =.6 ma.5.4 I F =. ma, I C =.45 ma.7.4 I F =.6 ma, I C =.6 ma.6.4 I F = 3. ma, I C =. ma.6.4 I F =. ma, I C =.75 ma.8.4 I F =.6 ma, I C =. ma.7.4 I F = 3. ma, I C =.6 ma.7.4 % % V FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package 5
6 Switching Characteristics Apply over all recommended conditions (T A = -4 C to +5 C unless otherwise specified). All typical values are measured at T A = 5 C. Symbol Parameter Device Conditions Min. Typ. Max. Unit t ON Turn-On Time All Devices t OFF Turn-Off Time All Devices t R t F CM H CM L Output Rise Time (% to 9%) Output Fall Time (9% to %) Common-Mode Rejection Voltage (Transient Immunity) Output High Common-Mode Rejection Voltage (Transient Immunity) Output Low All Devices All Devices All Devices All Devices I F =.6 ma, V CC = 5 V, R L =.75 k I F =.6 ma, V CC = 5 V, R L = 4.7 k I F =.6 ma, V CC = 5 V, R L =.75 k I F =.6 ma, V CC = 5 V, R L = 4.7 k I F =.6 ma, V CC = 5 V, R L =.75 k I F =.6 ma, V CC = 5 V, R L =.75 k T A = 5 C, I F = ma, V O >. V, R L = 4.7 k, V CM = V (7), Figure 6 T A = 5 C, I F =.6 ma, V O <.8 V, R L = 4.7 k, V CM = V (7), Figure 6 6 Note: 7.Common-mode transient immunity at output high is the maximum tolerable positive dvcm/dt on the leading edge of the common-mode impulse signal, V CM, to assure that the output remains high µs µs 5 µs 5.5 µs kv / µs kv / µs FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package 6
7 Typical Performance Curves IF FORWARD CURRENT (ma) CTR CURRENT TRANSFER RATIO (%) V F FORWARD VOLTAGE (V) Figure 3. Forward Current vs. Forward Voltage V CE = 5 V T A = 5 C. I F FORWARD CURRENT (ma) Figure 5. Current Transfer Ratio vs. Forward Current NORMALIZED 5 C V CE = V T A = 5 C = 5 C T A = -4 C I F =.5 ma I F = ma I F = ma IC COLLECTOR CURRENT (ma) CTR (NORMALIZED) = CTR(IF) / CTR(IF = ma) NORMALIZED 5 C. V CE = 5. V V CE =.4 V.. I F FORWARD CURRENT (ma) Figure 4. Collector Current vs. Forward Current. T A = 5 C V CE = 5 V T A = 5 C NORMALIZED TO I F = ma.. I F FORWARD CURRENT (ma) Figure 6. Normalized CTR vs. Forward Current V CE = 5 V I F =.5 ma I F = ma I F = ma FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package T A AMBIENT TEMPERATURE ( C) Figure 7. Normalized CTR vs. Ambient Temperature T A AMBIENT TEMPERATURE ( C) Figure 8. Normalized CTR vs. Ambient Temperature 7
8 Typical Performance Curves (Continued) ICEO COLLECTOR DARK CURRENT (na) IC COLLECTOR CURRENT (ma) VCE(SAT) COLLECTOR-EMITTER SATURATION VOLTAGE (V).. -4 I F = ma I F = ma I F = 5. ma I F = 3. ma I F =.6 ma I F =. ma I F =.5 ma V CE = 5 V T A AMBIENT TEMPERATURE ( C) Figure 9. Collector Current vs. Ambient Temperature V CE = V T A AMBIENT TEMPERATURE ( C) Figure. Collector Dark Current vs. Ambient Temperature I F =.6 ma, I C =.6 ma V CE = 4 V V CE = 5 V V CE = 48 V V CE = 75 V I F = 3. ma, I C =.8 ma T A AMBIENT TEMPERATURE ( C) IC COLLECTOR CURRENT (ma) SWITCHING TIME (μs) CTR CURRENT TRANSFER RATIO (%) T A = 5 C I F = ma I F = 5 ma I F = ma I F = ma V CE COLLECTOR-EMITTER VOLTAGE (V) Figure Collector Current vs. Collector-Emitter Voltage t OFF. R L LOAD RESISTANCE (kω) Figure. Switching Time vs. Load Resistance V CE = 5 V T A = 5 C I F =.6 ma V CE = 5 V, I F = 3 ma V CE =.4 V, I F = ma V CE =.4 V, I F =.6 ma V CE =.4 V, I F = 3 ma t ON t F I F = 5 ma T A AMBIENT TEMPERATURE ( C) t R V CE = 5 V, I F = ma V CE = 5 V, I F =.6 ma FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Figure 3. Collector-Emitter Saturation Voltage vs. Ambient Temperature Figure 4. Current Transfer Ration vs. Ambient Temperature 8
9 Test Circuits Pulse Generator: tr = 5 ns Z O = 5 Ω PW = 5 μs DC = % Input Pulse Output Pulse I F Monitor I F + t R R M t ON t OFF V O 4 GND 3 +5 V R L = 4.7 kω (I F =.6 ma) V O Monitoring Node Figure 5. Test Circuit for Propagation Delay, Rise Time, and Fall Time SW R M V CM 9% % V O (I F = ma) V O (I F =.6 ma) I F + V CM Pulse Gen 4 GND 3 +5 V tf 9% % V OL R L = 4.7 kω kv V V OH V.8 V V OL 5 V V O Monitoring Node FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Figure 6. Test Circuit for Instantaneous Common-Mode Rejection Voltage 9
10 Reflow Profile Temperature ( C) T P T L Profile Freature Time 5 C to Peak Figure 3. Reflow Profile Figure 7. Reflow Profile Pb-Free Assembly Profile Temperature Minimum (Tsmin) 5 C Temperature Maximum (Tsmax) C Time (t S ) from (Tsmin to Tsmax) Ramp-up Rate (t L to t P ) Max. Ramp-up Rate = 3 C/S Max. Ramp-down Rate = 6 C/S Tsmax Tsmin 6 seconds 3 C/second maximum Liquidous Temperature (T L ) 7 C Time (t L ) Maintained Above (T L ) Peak Body Package Temperature Time (t P ) within 5 C of 45 C Ramp-down Rate (T P to T L ) Time 5 C to Peak Temperature ts tl 6 5 seconds 45 C + C / 5 C 3 seconds 6 C/second maximum 8 minutes maximum tp 4 36 FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package
11 Ordering Information Part Number Package Packing Method FODM88A Half Pitch Mini-Flat 4-Pin Tube ( units) FODM88AR Half Pitch Mini-Flat 4-Pin Tape and Reel (5 Units) FODM88AV Half Pitch Mini-Flat 4-Pin, DIN EN/IEC Option Tube ( Units) FODM88ARV Half Pitch Mini-Flat 4-Pin, DIN EN/IEC Option Tape and Reel (5 Units) Note: 8. The product orderable part number system listed in this table also applies to the FODM88B, FODM88C products. Marking Information Table. Top Mark Definitions 3 V 4 X YY Figure 8. Top Mark ON Semiconductor Logo Device Number 3 DIN EN/IEC Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., 6 5 Digit Work Week, Ranging from to 53 6 Assembly Package Code 5 88x M 6 FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package
12 Tape and Reel Dimensions K t d W Description Tape Width Tape Thickness Sprocket Hole Pitch Sprocket Hole Diameter Sprocket Hole Location Pocket Location Pocket Pitch Pocket Dimension Pocket Hole Diameter Cover Tape Width Cover Tape Thickness Max. Component Rotation or Tilt Devices Per Reel Reel Diameter P Symbol W t P D E F P P A B K D W d A P P B D D F.7 Pitch Dimensions (mm). +.3 / -..3 ±.5 4. ± / ±. 5.5 ±.. ±. 8. ±..8 ±. 7.3 ±..3 ±..5 Min ±. Max mm (3") E W FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package
13 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 95 E. 3nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative
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