FODM8801A, FODM8801B, FODM8801C OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package

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1 FODM88A, FODM88B, FODM88C OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Features Utilizing Proprietary Process Technology to Achieve High Operating Temperature: up to 25 C Guaranteed Current Transfer Ratio (CTR) Specifications Across Full Temperature Range Excellent CTR Linearity at High-Temperature CTR at Very Low Input Current, I F High Isolation Voltage Regulated by Safety Agency: C-UL / UL577, 375 VAC RMS for minute and DIN EN/IEC Compact Half-Pitch, Mini-Flat, 4-Pin Package (.27 mm Lead Pitch, 2.4 mm Maximum Standoff Height) > 5 mm Creepage and Clearance Distance Applicable to Infrared Ray Reflow, 245 C Applications Primarily Suited for DC-DC Converters Ground-Loop Isolation, Signal-Noise Isolation Communications Adapters, Chargers Consumer Appliances, Set-Top Boxes Industrial Power Supplies, Motor Control, Programmable Logic Control Schematic ANODE CATHODE 2 Figure. Schematic 4 COLLECTOR 3 EMITTER Description April 26 In the OptoHiT series, the FODM88 is a first-of-kind phototransistor, utilizing Fairchild s leading-edge proprietary process technology to achieve high operating temperature characteristics, up to 25 C. The optocoupler consists of an aluminum gallium arsenide (AlGaAs) infrared light-emitting diode (LED) optically coupled to a phototransistor, available in a compact halfpitch, mini-flat, 4-pin package. It delivers high current transfer ratio at very low input current. The input-output isolation voltage, V ISO, is rated at 375 VAC RMS. Package Figure 2. Half-Pitch Mini-Flat FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package 2 Fairchild Semiconductor Corporation FODM88X Rev..

2 Safety and Insulation Ratings As per DIN EN/IEC , this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Note:. Safety limit values maximum values allowed in the event of a failure. Characteristics Installation Classifications per DIN VDE < 5 V RMS I IV /.89 Table, For Rated Mains Voltage < 3 V RMS I III Climatic Classification 45/25/2 Pollution Degree (DIN VDE /.89) 2 Comparative Tracking Index 75 Symbol Parameter Value Unit V PR Input-to-Output Test Voltage, Method A, V IORM x.6 = V PR, Type and Sample Test with t m = s, Partial Discharge < 5 pc 848 V peak Input-to-Output Test Voltage, Method B, V IORM x.875 = V PR, % Production Test with t m = s, Partial Discharge < 5 pc 6 V peak V IORM Maximum Working Insulation Voltage 565 V peak V IOTM Highest Allowable Over-Voltage 6 V peak External Creepage 5 mm External Clearance 5 mm DTI Distance Through Insulation (Insulation Thickness).5 mm T S Case Temperature () 5 C I S,INPUT Input Current () 2 ma P S,OUTPUT Output Power () 3 mw R IO Insulation Resistance at T S, V IO = 5 V () > 9 FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package 2 Fairchild Semiconductor Corporation FODM88X Rev.. 2

3 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. T A = 25 C unless otherwise specified. Symbol Parameter Value Unit Total Package T STG Storage Temperature -4 to +5 C T OPR Operating Temperature -4 to +25 C T J Junction Temperature -4 to +4 C T SOL Lead Solder Temperature 245 for s C Emitter I F(average) Continuous Forward Current 2 ma V R Reverse Input Voltage 6 V PD LED Power Dissipation (2)(4) 4 mw Detector I C(average) Continuous Collector Current 3 ma V CEO Collector-Emitter Voltage 75 V V ECO Emitter-Collector Voltage 7 V PD C Collector Power Dissipation (3)(4) 5 mw Notes: 2.Derate linearly from 73 C at a rate of.24 mw/ C 3.Derate linearly from 73 C at a rate of 2.23 mw/ C. 4.Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Symbol Parameter Value Unit T A Operating Temperature -4 to +25 C V FL(OFF) Input Low Voltage -5. to +.8 V I FH Input High Forward Current to ma Isolation Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit V ISO Input-Output Isolation Voltage f = 6 Hz, t = min., I I-O µa (5)(6) 3,75 VAC RMS R ISO Isolation Resistance V I-O = 5 V (5) 2 C ISO Isolation Capacitance f = MHz.3.5 pf FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Notes: 5.Device is considered a two-terminal device: pins and 2 are shorted together and pins 3 and 4 are shorted together. 6.3,75 VAC RMS for minute is equivalent to 4,5 VAC RMS for second. 2 Fairchild Semiconductor Corporation FODM88X Rev.. 3

4 Electrical Characteristics Apply over all recommended conditions (T A = -4 C to +25 C unless otherwise specified). All typical values are measured at T A = 25 C. Symbol Parameter Conditions Min. Typ. Max. Unit Emitter V F Forward Voltage I F = ma V V F / T A Forward-Voltage Coefficient I F = ma -.6 mv / C I R Reverse Current V R = 6 V µa C T Terminal Capacitance V = V, f = MHz 3 pf Detector BV CEO BV ECO I CEO Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Dark Current I C =.5 ma, I F = ma 75 3 V I E = µa, I F = ma 7 2 V V CE = 75 V, I F = ma, T A = 25 C na V CE = 5 V, I F = ma 5 µa V CE = 5 V, I F = ma 3 µa C CE Capacitance V CE = V, f = MHz 8 pf FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package 2 Fairchild Semiconductor Corporation FODM88X Rev.. 4

5 Transfer Characteristics Apply over all recommended conditions (T A = -4 C to +25 C unless otherwise specified). All typical values are measured at T A = 25 C. Symbol Parameter Device Conditions Min. Typ. Max. Unit CTR CE CTR CE(SAT) V CE(SAT) Current Transfer Ratio (Collector-Emitter) Saturated Current Transfer Ratio (Collector-Emitter) Saturation Voltage FODM88A FODM88B FODM88C FODM88A FODM88B FODM88C FODM88A FODM88B FODM88C I F =. ma, V CE = 5 T A = 25 C I F =. ma, V CE = 5 V I F =.6 ma, V CE = 5 V 4 25 I F = 3. ma, V CE = 5 V I F =. ma, V CE = 5 T A = 25 C I F =. ma, V CE = 5 V I F =.6 ma, V CE = 5 V 7 22 I F = 3. ma, V CE = 5 V I F =. ma, V CE = 5 T A = 25 C I F =. ma, V CE = 5 V 3 56 I F =.6 ma, V CE = 5 V 32 I F = 3. ma, V CE = 5 V 5 33 I F =. ma, V CE =.4 T A = 25 C I F =. ma, V CE =.4 V 3 8 I F =.6 ma, V CE =.4 V 25 4 I F = 3. ma, V CE =.4 V 2 92 I F =. ma, V CE =.4 T A = 25 C I F =. ma, V CE =.4 V I F =.6 ma, V CE =.4 V 4 55 I F = 3. ma, V CE =.4 V I F =. ma, V CE =.4 T A = 25 C I F =. ma, V CE =.4 V I F =.6 ma, V CE =.4 V I F = 3. ma, V CE =.4 V I F =. ma, I C =.3 ma.7.4 I F =.6 ma, I C =.4 ma.6.4 I F = 3. ma, I C =.6 ma.5.4 I F =. ma, I C =.45 ma.7.4 I F =.6 ma, I C =.6 ma.6.4 I F = 3. ma, I C =. ma.6.4 I F =. ma, I C =.75 ma.8.4 I F =.6 ma, I C =. ma.7.4 I F = 3. ma, I C =.6 ma.7.4 % % V FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package 2 Fairchild Semiconductor Corporation FODM88X Rev.. 5

6 Switching Characteristics Apply over all recommended conditions (T A = -4 C to +25 C unless otherwise specified). All typical values are measured at T A = 25 C. Symbol Parameter Device Conditions Min. Typ. Max. Unit t ON Turn-On Time All Devices t OFF Turn-Off Time All Devices t R t F CM H CM L Output Rise Time (% to 9%) Output Fall Time (9% to %) Common-Mode Rejection Voltage (Transient Immunity) Output High Common-Mode Rejection Voltage (Transient Immunity) Output Low All Devices All Devices All Devices All Devices I F =.6 ma, V CC = 5 V, R L =.75 k I F =.6 ma, V CC = 5 V, R L = 4.7 k I F =.6 ma, V CC = 5 V, R L =.75 k I F =.6 ma, V CC = 5 V, R L = 4.7 k I F =.6 ma, V CC = 5 V, R L =.75 k I F =.6 ma, V CC = 5 V, R L =.75 k T A = 25 C, I F = ma, V O > 2. V, R L = 4.7 k, V CM = V (7), Figure 6 T A = 25 C, I F =.6 ma, V O <.8 V, R L = 4.7 k, V CM = V (7), Figure Note: 7.Common-mode transient immunity at output high is the maximum tolerable positive dvcm/dt on the leading edge of the common-mode impulse signal, V CM, to assure that the output remains high µs µs 5 µs 5.5 µs 2 kv / µs 2 kv / µs FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package 2 Fairchild Semiconductor Corporation FODM88X Rev.. 6

7 Typical Performance Curves IF FORWARD CURRENT (ma) CTR CURRENT TRANSFER RATIO (%) V F FORWARD VOLTAGE (V) Figure 3. Forward Current vs. Forward Voltage V CE = 5 V T A = 25 C. I F FORWARD CURRENT (ma) Figure 5. Current Transfer Ratio vs. Forward Current NORMALIZED 25 C V CE = 2 V T A = 25 C = 25 C T A = -4 C I F =.5 ma I F = 2 ma I F = ma IC COLLECTOR CURRENT (ma) CTR (NORMALIZED) = CTR(IF) / CTR(IF = ma) NORMALIZED 25 C. V CE = 5. V V CE =.4 V.. I F FORWARD CURRENT (ma) Figure 4. Collector Current vs. Forward Current. T A = 25 C V CE = 5 V T A = 25 C NORMALIZED TO I F = ma.. I F FORWARD CURRENT (ma) Figure 6. Normalized CTR vs. Forward Current V CE = 5 V I F =.5 ma I F = 2 ma I F = ma FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package T A AMBIENT TEMPERATURE ( C) Figure 7. Normalized CTR vs. Ambient Temperature T A AMBIENT TEMPERATURE ( C) Figure 8. Normalized CTR vs. Ambient Temperature 2 Fairchild Semiconductor Corporation FODM88X Rev.. 7

8 Typical Performance Curves (Continued) ICEO COLLECTOR DARK CURRENT (na) IC COLLECTOR CURRENT (ma) VCE(SAT) COLLECTOR-EMITTER SATURATION VOLTAGE (V).. -4 I F = 2 ma I F = ma I F = 5. ma I F = 3. ma I F =.6 ma I F =. ma I F =.5 ma V CE = 5 V T A AMBIENT TEMPERATURE ( C) Figure 9. Collector Current vs. Ambient Temperature T A AMBIENT TEMPERATURE ( C) Figure. Collector Dark Current vs. Ambient Temperature I F =.6 ma, I C =.6 ma V CE = 48 V V CE = 24 V V CE = V V CE = 5 V V CE = 75 V I F = 3. ma, I C =.8 ma T A AMBIENT TEMPERATURE ( C) IC COLLECTOR CURRENT (ma) SWITCHING TIME (μs) CTR CURRENT TRANSFER RATIO (%) T A = 25 C I F = 2 ma I F = 5 ma I F = ma I F = ma V CE COLLECTOR-EMITTER VOLTAGE (V) Figure Collector Current vs. Collector-Emitter Voltage t OFF. R L LOAD RESISTANCE (kω) Figure 2. Switching Time vs. Load Resistance V CE = 5 V T A = 25 C I F =.6 ma V CE = 5 V, I F = 3 ma V CE =.4 V, I F = ma V CE =.4 V, I F =.6 ma V CE =.4 V, I F = 3 ma t ON T A AMBIENT TEMPERATURE ( C) t F I F = 5 ma t R V CE = 5 V, I F = ma V CE = 5 V, I F =.6 ma FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Figure 3. Collector-Emitter Saturation Voltage vs. Ambient Temperature Figure 4. Current Transfer Ration vs. Ambient Temperature 2 Fairchild Semiconductor Corporation FODM88X Rev.. 8

9 Test Circuits Pulse Generator: tr = 5 ns Z O = 5 Ω PW = 5 μs DC = % Input Pulse Output Pulse I F Monitor I F + t R 2 R M t ON t OFF V O 4 GND 3 +5 V R L = 4.7 kω (I F =.6 ma) V O Monitoring Node Figure 5. Test Circuit for Propagation Delay, Rise Time, and Fall Time SW R M V CM 9% % V O (I F = ma) V O (I F =.6 ma) I F + 2 V CM Pulse Gen 4 GND 3 +5 V tf 9% % V OL R L = 4.7 kω kv V V OH 2 V.8 V V OL 5 V V O Monitoring Node FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Figure 6. Test Circuit for Instantaneous Common-Mode Rejection Voltage 2 Fairchild Semiconductor Corporation FODM88X Rev.. 9

10 Reflow Profile Temperature ( C) TP T L Max. Ramp-up Rate = 3 C/S Max. Ramp-down Rate = 6 C/S Tsmax Tsmin 2 Profile Freature Pb-Free Assembly Profile Temperature Min. (Tsmin) 5 C Temperature Max. (Tsmax) 2 C Time (t S ) from (Tsmin to Tsmax) 6 2 seconds Ramp-up Rate (t L to t P ) 3 C/second max. Liquidous Temperature (T L ) 27 C Time (t L ) Maintained Above (T L ) 6 5 seconds Peak Body Package Temperature 245 C + C / 5 C Time (t P ) within 5 C of 26 C 3 seconds Ramp-down Rate (T P to T L ) 6 C/second max. Time 25 C to Peak Temperature 8 minutes max. ts Time 25 C to Peak Time (seconds) Figure 7. Reflow Profile tl t P FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package 2 Fairchild Semiconductor Corporation FODM88X Rev..

11 Ordering Information Part Number Package Packing Method FODM88A Half Pitch Mini-Flat 4-Pin Tube ( units) FODM88AR2 Half Pitch Mini-Flat 4-Pin Tape and Reel (25 Units) FODM88AV Half Pitch Mini-Flat 4-Pin, DIN EN/IEC Option Tube ( Units) FODM88AR2V Half Pitch Mini-Flat 4-Pin, DIN EN/IEC Option Tape and Reel (25 Units) Note: 8. The product orderable part number system listed in this table also applies to the FODM88B, FODM88C products. Marking Information Table. Top Mark Definitions 3 V 4 X YY Figure 8. Top Mark Fairchild Logo 2 Device Number 3 DIN EN/IEC Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., 6 5 Digit Work Week, Ranging from to 53 6 Assembly Package Code 5 88x M 2 6 FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package 2 Fairchild Semiconductor Corporation FODM88X Rev..

12 Tape and Reel Dimensions K t d W Description Tape Width Tape Thickness Sprocket Hole Pitch Sprocket Hole Diameter Sprocket Hole Location Pocket Location Pocket Pitch Pocket Dimension Pocket Hole Diameter Cover Tape Width Cover Tape Thickness Max. Component Rotation or Tilt Devices Per Reel Reel Diameter P Symbol W t P D E F P P A B K D W d 2 A P P 2 B D D F.27 Pitch Dimensions (mm) / -..3 ±.5 4. ± / ±. 5.5 ±. 2. ±. 8. ±. 2.8 ±. 7.3 ±. 2.3 ±..5 Min ±. Max mm (3") E W FODM88X OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package 2 Fairchild Semiconductor Corporation FODM88X Rev.. 2

13 PIN ONE (Typ) (Max) LAND PATTERN RECOMMENDATION R.5 (Typ) ~8.27+/-.27 NOTES: A) NO STANDARD APPLIES TO THIS PACKAGE B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSION D) DRAWING FILENAME AND REVSION : MKT-MFP4AREV4. R.5 (Typ) (Typ)

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FODM8801A, FODM8801B, FODM8801C OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package

FODM8801A, FODM8801B, FODM8801C OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package FODM88A, FODM88B, FODM88C OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Features Utilizing Proprietary Process Technology to Achieve High Operating