Optical (2.8) (2.3) PIN 1 ANODE PIN 2 CATHODE PIN 3 COLLECTOR PIN 4 EMITTER
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1 PACKAGE DIMENSIONS 0.97 (.7) (.3) 0.7 (.0) 0.57 (.6) Ø 0.33 (3.) Ø 0.6 (3.) (X) 0.9 (6.35) 0.3 (6.5) D E (9.) 0.75 (8.9) 0.39 (.00) 0.3 (0.85) 0.9 (3.3) 0.9 (3.0) 0.03 (.60) NOM 0.33 (.0) 0. (0.7) Optical 0.5 (3.) 0.9 (3.0) 0.35 (8.0) SCHEMATIC.95 (7.5).7 (6.9) 0.0 (.8) 0.09 (.3) (0.5) (SQ) PIN ANODE PIN CATHODE PIN 3 COLLECTOR PIN EMITTER 3 NOTES:. Dimensions for all drawings are in inches (mm).. Tolerance of ±.00 (.5) on all non-nominal dimensions unless otherwise specified. DESCRIPTION The is a gallium arsenide infrared emitting diode coupled with a silicon photo darlington in a plastic housing. The gap in the housing provides a means of interrupting the signal with tape, cards, shaft encoders, or other opaque material, switching the output from an ON to an OFF state. FEATURES Opaque housing Low cost.035 apertures European Pro Electron registered 00 Fairchild Semiconductor Corporation DS3008 5//0 OF 5
2 ABSOLUTE MAXIMUM RATINGS (T A = 5 C unless otherwise specified) Parameter Symbol Rating Unit Operating Temperature T OPR -55 to 00 C Storage Temperature T STG -55 to 00 C Soldering Temperature (Iron) (,3 and ) T SOL-I 0 for 5 sec C Soldering Temperature (Flow) ( and 3) T SOL-F 60 for 0 sec C INPUT (EMITTER) Continuous Forward Current IF 50 ma Reverse Voltage V R 6 V Power Dissipation () P D 00 mw OUTPUT (SENSOR) Collector to Emitter Voltage V CEO 30 V Emitter to Collector Voltage V ECO 6 V Collector Current I C 0 ma Power Dissipation (T C = 5 C) () P D 50 mw NOTE:. Derate power dissipation linearly.67 mw/ C above 5 C.. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents.. Soldering iron tip /6 (.6mm) minimum from housing. ELECTRICAL / OPTICAL CHARACTERISTICS (TA =5 C) PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS INPUT (EMITTER) Forward Voltage I F = 0 ma VF.7 V Reverse Leakage Current V R = V I R 0 µa OUTPUT (SENSOR) Emitter to Collector Breakdown I E = 00 µa, Ee = 0 BV ECO 7.0 V Collector to Emitter Breakdown I C = 0 ma, Ee = 0 BV CEO 5 V Collector to Emitter Leakage V CE = 0 V, Ee = 0 I CEO 00 na COUPLED On-State Collector Current I F = 0 ma, V CE = 0 V IC(ON).5 ma Saturation Voltage I F = 0 ma, I C = 0.5 ma VCE(SAT). V Turn-On Time I F = 0 ma, V CC = 5 V, R L = 750Ω t on 50 µs Turn-Off Time I F = 0 ma, V CC = 5 V, R L = 750Ω t off 50 µs OF 5 5//0 DS3008
3 TYPICAL PERFORMANCE CURVES Figure. Output Current vs. Input Current I F = 5 ma V CE =.5 V PULSED P W = 00 µsec PRR = 00 pps I F, INPUT CURRENT (ma) 00 Figure. Output Current vs. Temperature V CE =.5 V, I F = 5 ma, T A = 5 C 0 I F = 00 ma I F = 60 ma I F = 30 ma I F = 0 ma I F = 0 ma INPUT PULSED I F = 5 ma I F = ma Figure 3. V CE(SAT) vs. Temperature I C 50 ma = I F 60 ma I C.8 ma =, TA = 5 C I F 0 ma PULSED PW = 00 µs, PRR = 00 pps V CE(SAT), NORMALIZED I C 3.6 ma = I F 0 ma I C.8 ma = I F 0 ma I C 0.9 ma = I F 5 ma DS3008 5//0 3 OF 5
4 TYPICAL PERFORMANCE CURVES (CONTINUED) PHOTODARLINGTON Figure. Leakage Current vs. Temperature DETECTOR EMITTER 0 V CE = 5 V T A = 5 C I CEO, NORMALIZED DARK CURRENT 0 0 V CE = 5 V V CE = 0 V I R, NORMALIZED LEAKAGE CURRENT 0 0 V R = 5 V T A = 5 C Figure 6. Output Current vs. Distance Figure 5. Switching Speed vs. RL.00 d, DISTANCE (mils) I F R L t ON, AND t OFF NORMALIZED PW = 300 µs PRR = 00 pps I F = 7.5 AMPS, V CC = 5V R L R L = 750 Ω t off t on V CC E BLACK D d o NORMALIZED TO VALUE WITH REMOVED BLACK d o R L, LOAD RESISTANCE (Ω) d, DISTANCE (mm) OF 5 5//0 DS3008
5 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user.. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. DS3008 5//0 5 OF 5
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