ChargeStorage Elements: BaseCharging Capacitance C b


 Randall Holland
 3 years ago
 Views:
Transcription
1 ChargeStorage Elements: BaseCharging Capacitance C b * Minority electrons are stored in the base  this charge q NB is a function of the baseemitter voltage * base is still neutral... majority carriers neutralize the injected electrons q PB = q NB C b = q PB v BE Q EE 105 Spring 2000 Page 1 Week 10, Lecture 20
2 Base Transit Time * The electron charge in the base is found by integrating the electron concentration in the base  the area is A E (under the emitter): q PB W B = q NB = qa E n ()dx x = pb qa 2 E W B n pbo e v BE V th * The stored charge is proportional to the collector current: 1 q PB W 2 B ( W B D nb ) qa E D nb npbo e v 2 BE V th W B = = ic W B 2D nb * The proportionality constant looks like a diffusion time (it is) and is defined as the base transit time: 2 W B τ F = D nb A typical transit time is τ F = 10 ps for an oxideisolated npn BJT. * The basecharging capacitance is: C b q PB = = v BE Q g m τ F EE 105 Spring 2000 Page 2 Week 10, Lecture 20
3 Complete SmallSignal Model * Add the depletion capacitance from the baseemitter junction to find the total baseemitter capacitance: C π = C je C b C je 2C jeo C jeo is proportional to the emitterbase junction area (A E ) * Depletion capacitance from the basecollector junction: C µ = C µo C µ = V CB φ Bc C µo is proportional to the basecollector junction area (A C ) * Depletion capacitance from collector (n buried layer) to bulk: C cs C cs = C cso 1 V CS φ Bs C cso is proportional to the collectorsubstrate junction area (A S ) EE 105 Spring 2000 Page 3 Week 10, Lecture 20
4 npn BJT SPICE model Close correspondence to EbersMoll and smallsignal models Name Parameter Description Units IS transport saturation current [I S ] Amps BF ideal maximum forward beta [β F ] None VAF forward Early voltage [V An ] Volts BR ideal maximum reverse beta [β R ] None RB zero bias base resistance [r b ] Ohms RE emitter resistance [r ex ] Ohms RC collector resistance [r c ] Ohms CJE BE zerobias depletion capacitance [C jeo ] Farads VJE BE builtin potential [φ Be ] Volts MJE BE junction exponential factor None CJC BC zerobias depletion capacitance [C µo ] Farads VJC BC builtin potential [φ Bc ] Volts MJC BC junction exponential factor None CJS substrate zerobias depletion capacitance [C cso ] Farads VJS substrate builtin potential [φ Bs ] Volts MJS substrate junction exponential factor None TF ideal forward transit time [τ F ] Seconds.MODEL MODQN NPN IS=1E17 BF=100 VAF=25 TF=50P CJE=8E15 VJE=0.95 MJE=0.5 CJC=22E15 VJC=0.79 MJC=0.5 CJS=41E15 VJS=0.71 MJS=0.5 RB=250 RC=200 RE=5 EE 105 Spring 2000 Page 4 Week 10, Lecture 20
5 A Simple MOSFET Amplifier Amplify = make something larger... something = current, voltage, or power V SUP (positive DC supply) i RD R D R S _ v OUT v s _ v IN V BIAS _ V SUP (negative DC supply) V BIAS is selected so that V OUT is centered between V SUP and V SUP : V OUT = 0 V... NOT v OUT = 0 V! Find the DC drain current: I RD = (V SUP  V OUT ) / R D = V SUP / R D I RD = I D = I DSAT... verify that MOSFET is saturated after finding V BIAS (to find V BIAS, solve saturation current equation for V GS... the result is that for normal device dimensions and DC drain currents, V GS = V Tn (0.25 to 0.5) V) EE 105 Spring 2000 Page 5 Week 10, Lecture 20
6 MOSFET Amplifier Now consider the effect of the small signal voltage: v IN = V BIAS v s so v GS = V BIAS ( V SUP ) v s = V GS v s Let v s () t = vˆs cos( ωt) Approach 1. Just use v IN in the equation for the total drain current and find v OUT W v OUT = V SUP R D i D V SUP R D ( µ n C ox ) L ( VGS v V ) 2 s Tn W v OUT V SUP R D ( µ n C ox ) ( VGS V 2L Tn ) 2 v s 1 ( = V GS V Tn ) I D v s v OUT V SUP R D I D 1 ( = V GS V Tn ) V SUP Expand (1 x) 2 = 1 2x x 2 v s V GS V Tn 1 2v s v s 2 = V GS V Tn V GS V Tn EE 105 Spring 2000 Page 6 Week 10, Lecture 20
7 Special Case: v s is Small What s small? 2v s v s 2» V GS V Tn V GS V Tn... true if 2v s «1 V GS V Tn For this case, the total output voltage is 2v s v OUT V SUP R D I D 1 ( R D I D v s = V V GS V Tn ) SUP V SUP ( V GS V Tn ) The average output voltage V OUT = 0 V so the total output voltage is the smallsignal voltage in this special case: 2R D I D v OUT v out ( V GS V Tn ) v 2V SUP = = = s ( V GS V Tn ) v = A s v v s v s (t) v out (t) v s (t) t EE 105 Spring 2000 Page 7 Week 10, Lecture 20
8 Is There a Better Way? Approach 2. Do problem in two steps. 1. DC voltages and currents (ignore small signals sources): set bias point of of the MOSFET... we had to do this to pick V BIAS already 2. Substitute the smallsignal model of the MOSFET and the smallsignal models of the other circuit elements R S C gd R D v s _ C gs g m v s r o v out Where are the DC supplies?? EE 105 Spring 2000 Page 8 Week 10, Lecture 20
9 SmallSignal Models of TwoTerminal Circuit Elements i R SmallSignal Model v R  i R R v R i SUP i SUP V SUP _ v SUP v SUP  i SUP I SUP i SUP v SUP  v SUP EE 105 Spring 2000 Page 9 Week 10, Lecture 20
10 SmallSignal Output Voltage Don t bother with capacitors... wait until Chapter 10 to put them in v out = g m v s ( R D r o ) Smallsignal voltage gain: A v = g m ( R D r o ) Transconductance of MOSFET in saturation g m W = µ n C ox  ( VBIAS V L Tn ) = 2I DSAT V BIAS V Tn Smallsignal voltage gain: A v = 2I DSAT ( RD r V BIAS V o ) Tn... almost identical to bruteforce result, but the smallsignal model includes the effect of channellength modulation (through r o = (1 / λ n I DSAT )) EE 105 Spring 2000 Page 10 Week 10, Lecture 20
Bipolar Junction Transistor (BJT) Model. Model Kind. Model SubKind. SPICE Prefix. SPICE Netlist Template Format
Bipolar Junction Transistor (BJT) Model Old Content  visit altiumcom/documentation Modified by Admin on Sep 13, 2017 Model Kind Transistor Model SubKind BJT SPICE Prefix Q SPICE Netlist Template Format
More informationFinal Examination EE 130 December 16, 1997 Time allotted: 180 minutes
Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and crosssectional area 100µm 2
More informationLecture 17  The Bipolar Junction Transistor (I) Forward Active Regime. April 10, 2003
6.012  Microelectronic Devices and Circuits  Spring 2003 Lecture 171 Lecture 17  The Bipolar Junction Transistor (I) Contents: Forward Active Regime April 10, 2003 1. BJT: structure and basic operation
More information6.012 Electronic Devices and Circuits Spring 2005
6.012 Electronic Devices and Circuits Spring 2005 May 16, 2005 Final Exam (200 points) OPEN BOOK Problem NAME RECITATION TIME 1 2 3 4 5 Total General guidelines (please read carefully before starting):
More informationDevice Physics: The Bipolar Transistor
Monolithic Amplifier Circuits: Device Physics: The Bipolar Transistor Chapter 4 Jón Tómas Guðmundsson tumi@hi.is 2. Week Fall 2010 1 Introduction In analog design the transistors are not simply switches
More informationBIPOLAR JUNCTION TRANSISTOR MODELING
BIPOLAR JUNCTION TRANSISTOR MODELING Introduction Operating Modes of the Bipolar Transistor The Equivalent Schematic and the Formulas of the SPICE GummelPoon Model A Listing of the GummelPoon Parameters
More informationLecture 15: MOS Transistor models: Body effects, SPICE models. Context. In the last lecture, we discussed the modes of operation of a MOS FET:
Lecture 15: MOS Transistor models: Body effects, SPICE models Context In the last lecture, we discussed the modes of operation of a MOS FET: oltage controlled resistor model I curve (SquareLaw Model)
More informationDigital Integrated CircuitDesign
Digital Integrated CircuitDesign Lecture 5a Bipolar Transistor Dep. Region Neutral Base n(0) b B C n b0 P C0 P e0 P C xn 0 xp 0 x n(w) b W B Adib Abrishamifar EE Department IUST Contents Bipolar Transistor
More informationLecture 17 The Bipolar Junction Transistor (I) Forward Active Regime
Lecture 17 The Bipolar Junction Transistor (I) Forward Active Regime Outline The Bipolar Junction Transistor (BJT): structure and basic operation I V characteristics in forward active regime Reading Assignment:
More informationChapter 13 SmallSignal Modeling and Linear Amplification
Chapter 13 SmallSignal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 131 Chapter Goals Understanding of concepts related to: Transistors
More informationEE105  Fall 2006 Microelectronic Devices and Circuits
EE105  Fall 2006 Microelectronic Devices and Circuits Prof. Jan M. Rabaey (jan@eecs) Lecture 21: Bipolar Junction Transistor Administrative Midterm Th 6:308pm in Sibley Auditorium Covering everything
More information6.012 Electronic Devices and Circuits
Page 1 of 12 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits FINAL EXAMINATION Open book. Notes: 1. Unless
More informationHomework Assignment 08
Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance
More informationForwardActive Terminal Currents
ForwardActive Terminal Currents Collector current: (electron diffusion current density) x (emitter area) diff J n AE qd n n po A E V E V th  e W (why minus sign? is by def.
More informationBiasing the CE Amplifier
Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC baseemitter voltage (note: normally plot vs. base current, so we must return to EbersMoll): I C I S e V BE V th I S e V th
More informationLecture 210 Physical Aspects of ICs (12/15/01) Page 2101
Lecture 210 Physical Aspects of ICs (12/15/01) Page 2101 LECTURE 210 PHYSICAL ASPECTS OF ICs (READING: TextSec. 2.5, 2.6, 2.8) INTRODUCTION Objective Illustrate the physical aspects of integrated circuits
More informationfigure shows a pnp transistor biased to operate in the active mode
Lecture 10b EE215 Electronic Devices and Circuits Asst Prof Muhammad Anis Chaudhary BJT: Device Structure and Physical Operation The pnp Transistor figure shows a pnp transistor biased to operate in the
More informationEE 230 Lecture 31. THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR
EE 23 Lecture 3 THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR Quiz 3 Determine I X. Assume W=u, L=2u, V T =V, uc OX =  4 A/V 2, λ= And the number is? 3 8 5 2? 6 4 9 7 Quiz 3
More informationLecture 19  pn Junction (cont.) October 18, Ideal pn junction out of equilibrium (cont.) 2. pn junction diode: parasitics, dynamics
6.720J/3.43J  Integrated Microelectronic Devices  Fall 2002 Lecture 191 Lecture 19  pn Junction (cont.) October 18, 2002 Contents: 1. Ideal pn junction out of equilibrium (cont.) 2. pn junction diode:
More informationLecture Notes for ECE 215: Digital Integrated Circuits
Lecture Notes for ECE 215: Digital Integrated Circuits J. E. Ayers Electrical and Computer Engineering Department University of Connecticut 2002 All rights reserved University of Connecticut 1 Introduction
More informationLecture 16  The pn Junction Diode (II) Equivalent Circuit Model. April 8, 2003
6.012  Microelectronic Devices and Circuits  Spring 2003 Lecture 161 Lecture 16  The pn Junction Diode (II) Equivalent Circuit Model April 8, 2003 Contents: 1. IV characteristics (cont.) 2. Smallsignal
More informationDigital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. The Devices. July 30, Devices.
Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The July 30, 2002 1 Goal of this chapter Present intuitive understanding of device operation Introduction
More informationMicroelectronic Devices and Circuits Lecture 13  Linear Equivalent Circuits  Outline Announcements Exam Two 
6.012 Microelectronic Devices and Circuits Lecture 13 Linear Equivalent Circuits Outline Announcements Exam Two Coming next week, Nov. 5, 7:309:30 p.m. Review Subthreshold operation of MOSFETs Review Large
More informationThe Devices. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002
Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The Devices July 30, 2002 Goal of this chapter Present intuitive understanding of device operation Introduction
More informationLecture 17. The Bipolar Junction Transistor (II) Regimes of Operation. Outline
Lecture 17 The Bipolar Junction Transistor (II) Regimes of Operation Outline Regimes of operation Largesignal equivalent circuit model Output characteristics Reading Assignment: Howe and Sodini; Chapter
More informationID # NAME. EE255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom
ID # NAME EE255 EXAM 3 April 7, 1998 Instructor (circle one) Ogborn Lundstrom This exam consists of 20 multiple choice questions. Record all answers on this page, but you must turn in the entire exam.
More informationLecture 10 MOSFET (III) MOSFET Equivalent Circuit Models
Lecture 10 MOSFET (III) MOSFET Equivalent Circuit Models Outline Lowfrequency smallsignal equivalent circuit model Highfrequency smallsignal equivalent circuit model Reading Assignment: Howe and Sodini;
More information1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp)
HW 3 1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) a) Obtain in Spice the transistor curves given on the course web page except do in separate plots, one for the npn
More informationElectronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices
Electronic Circuits 1 Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Threeterminal device whose voltagecurrent relationship is controlled by a third voltage
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 5: January 25, 2018 MOS Operating Regions, pt. 1 Lecture Outline! 3 Regions of operation for MOSFET " Subthreshold " Linear " Saturation!
More information6.012 Electronic Devices and Circuits
Page 1 of 10 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits Exam No. 2 Thursday, November 5, 2009 7:30 to
More informationThe Devices. Jan M. Rabaey
The Devices Jan M. Rabaey Goal of this chapter Present intuitive understanding of device operation Introduction of basic device equations Introduction of models for manual analysis Introduction of models
More informationBJT  Mode of Operations
JT  Mode of Operations JTs can be modeled by two backtoback diodes. N+ P N N+ JTs are operated in four modes. HO #6: LN 251  JT M Models Page 1 1) Forward active / normal junction forward biased junction
More informationGEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering
NAME: GEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering ECE 4430 First Exam Closed Book and Notes Fall 2002 September 27, 2002 General Instructions: 1. Write on one side of
More informationCapacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009
Wilfrid Laurier University June 4, 2009 Capacitor an electronic device which consists of two conductive plates separated by an insulator Capacitor an electronic device which consists of two conductive
More information13. Bipolar transistors
Technische Universität Graz Institute of Solid State Physics 13. Bipolar transistors Jan. 16, 2019 Technische Universität Graz Institute of Solid State Physics bipolar transistors npn transistor collector
More informationRecitation 17: BJTBasic Operation in FAR
Recitation 17: BJTBasic Operation in FAR BJT stands for Bipolar Junction Transistor 1. Can be thought of as two pn junctions back to back, you can have pnp or npn. In analogy to MOSFET small current
More informationELEC 3908, Physical Electronics, Lecture 17. Bipolar Transistor Injection Models
LC 3908, Physical lectronics, Lecture 17 Bipolar Transistor njection Models Lecture Outline Last lecture looked at qualitative operation of the BJT, now want to develop a quantitative model to predict
More informationDevice Models (PN Diode, MOSFET )
Device Models (PN Diode, MOSFET ) Instructor: Steven P. Levitan steve@ece.pitt.edu TA: Gayatri Mehta, José Martínez Book: Digital Integrated Circuits: A Design Perspective; Jan Rabaey Lab Notes: Handed
More informationELEC 3908, Physical Electronics, Lecture 19. BJT Base Resistance and Small Signal Modelling
ELEC 3908, Physical Electronics, Lecture 19 BJT Base Resistance and Small Signal Modelling Lecture Outline Lecture 17 derived static (dc) injection model to predict dc currents from terminal voltages This
More informationFigure 1: MOSFET symbols.
c Copyright 2008. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. The MOSFET Device Symbols Whereas the JFET has a diode junction between
More informationLecture 10 MOSFET (III) MOSFET Equivalent Circuit Models
Lecture 1 MOSFET (III) MOSFET Equivalent Circuit Models Outline Lowfrequency smallsignal equivalent circuit model Highfrequency smallsignal equivalent circuit model Reading Assignment: Howe and Sodini;
More informationThe Devices. Devices
The The MOS Transistor Gate Oxyde Gate Source n+ Polysilicon Drain n+ FieldOxyde (SiO 2 ) psubstrate p+ stopper Bulk Contact CROSSSECTION of NMOS Transistor CrossSection of CMOS Technology MOS transistors
More informationQuantitative MOSFET. Step 1. Connect the MOS capacitor results for the electron charge in the inversion layer Q N to the drain current.
Quantitative MOSFET Step 1. Connect the MOS capacitor results for the electron charge in the inversion layer Q N to the drain current. V DS _ n source polysilicon gate y = y * 0 x metal interconnect to
More informationLecture 16 The pn Junction Diode (III)
Lecture 16 The pn Junction iode (III) Outline I V Characteristics (Review) Small signal equivalent circuit model Carrier charge storage iffusion capacitance Reading Assignment: Howe and Sodini; Chapter
More informationMemories Bipolar Transistors
Technische Universität Graz nstitute of Solid State Physics Memories Bipolar Transistors Technische Universität Graz nstitute of Solid State Physics Exams February 5 March 7 April 18 June 27 Exam Four
More informationLecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER
Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER Outline. Introduction 2. CMOS multistage voltage amplifier 3. BiCMOS multistage voltage amplifier 4. BiCMOS current buffer 5. Coupling amplifier
More informationI. Frequency Response of Voltage Amplifiers
I. Frequency Response of Voltage Amplifiers A. CommonEmitter Amplifier: V i SUP i OUT R S V BIAS R L v OUT V Operating Point analysis: 0, R s 0, r o >, r oc >, R L > Find V BIAS such that I C
More informationDevice Models (PN Diode, MOSFET )
Device Models (PN Diode, MOSFET ) Instructor: Steven P. Levitan steve@ece.pitt.edu TA: Gayatri Mehta, José Martínez Book: Digital Integrated Circuits: A Design Perspective; Jan Rabaey Lab Notes: Handed
More informationStudent Number: CARLETON UNIVERSITY SELECTED FINAL EXAMINATION QUESTIONS
Name: CARLETON UNIVERSITY SELECTE FINAL EXAMINATION QUESTIONS URATION: 6 HOURS epartment Name & Course Number: ELEC 3908 Course Instructors: S. P. McGarry Authorized Memoranda: Nonprogrammable calculators
More informationBFR93A. NPN Silicon RF Transistor. For lownoise, highgain broadband amplifiers at collector currents from 2 ma to 30 ma
NPN Silicon RF Transistor For lownoise, highgain broadband amplifiers at collector currents from ma to ma VPS5 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin
More informationDATA SHEET. PRF957 UHF wideband transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Mar 01.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D1 Supersedes data of 1999 Mar 1 1999 Jul 3 FEATURES PINNING Small size Low noise Low distortion High gain Gold metallization ensures excellent reliability.
More informationMetaloxidesemiconductor field effect transistors (2 lectures)
Metalidesemiconductor field effect transistors ( lectures) MOS physics (brief in book) Currentvoltage characteristics  pinchoff / channel length modulation  weak inversion  velocity saturation 
More informationReview of Band Energy Diagrams MIS & MOS Capacitor MOS TRANSISTORS MOSFET Capacitances MOSFET Static Model
Content MOS Devices and Switching Circuits Review of Band Energy Diagrams MIS & MOS Capacitor MOS TRANSISTORS MOSFET Capacitances MOSFET Static Model A Cantoni 20092013 Digital Switching 1 Content MOS
More informationMOS Transistor Theory
MOS Transistor Theory So far, we have viewed a MOS transistor as an ideal switch (digital operation) Reality: less than ideal EE 261 Krish Chakrabarty 1 Introduction So far, we have treated transistors
More informationEE 230 Lecture 33. Nonlinear Circuits and Nonlinear Devices. Diode BJT MOSFET
EE 230 Lecture 33 Nonlinear Circuits and Nonlinear Devices Diode BJT MOSFET Review from Last Time: nchannel MOSFET Source Gate L Drain W L EFF Poly Gate oxide nactive psub depletion region (electrically
More informationSymbolic SPICE TM Circuit Analyzer and Approximator
Symbolic SPICE Symbolic SPICE TM Circuit Analyzer and Approximator Application Note AN006: Magnetic Microphone Amplifier by Gregory M. Wierzba Rev 072010 A) Introduction The schematic shown below in Fig.
More informationBipolar junction transistor operation and modeling
6.01  Electronic Devices and Circuits Lecture 8  Bipolar Junction Transistor Basics  Outline Announcements Handout  Lecture Outline and Summary; Old eam 1's on Stellar First Hour Eam  Oct. 8, 7:309:30
More informationEE5311 Digital IC Design
EE5311 Digital IC Design Module 1  The Transistor Janakiraman V Assistant Professor Department of Electrical Engineering Indian Institute of Technology Madras Chennai October 28, 2017 Janakiraman, IITM
More informationEE105  Fall 2005 Microelectronic Devices and Circuits
EE105  Fall 005 Microelectronic Devices and Circuits ecture 7 MOS Transistor Announcements Homework 3, due today Homework 4 due next week ab this week Reading: Chapter 4 1 ecture Material ast lecture
More informationLecture 11: JFET and MOSFET
ENE 311 Lecture 11: JFET and MOSFET FETs vs. BJTs Similarities: Amplifiers Switching devices Impedance matching circuits Differences: FETs are voltage controlled devices. BJTs are current controlled devices.
More informationFundamentals of the Metal Oxide Semiconductor FieldEffect Transistor
Triode Working FET Fundamentals of the Metal Oxide Semiconductor FieldEffect Transistor The characteristics of energy bands as a function of applied voltage. Surface inversion. The expression for the
More informationMOSFET Physics: The Long Channel Approximation
MOSFET Physics: The ong Channel Approximation A basic nchannel MOSFET (Figure 1) consists of two heavilydoped ntype regions, the Source and Drain, that comprise the main terminals of the device. The
More informationInstitute of Solid State Physics. Technische Universität Graz. Exam. Feb 2, 10:0011:00 P2
Technische Universität Graz nstitute of Solid State Physics Exam Feb 2, 10:0011:00 P2 Exam Four questions, two from the online list. Calculator is ok. No notes. Explain some concept: (tunnel contact,
More information****** bjt model parameters tnom= temp= *****
****** HSPICE H 2013.03 64 BIT (Feb 27 2013) RHEL64 ****** Copyright (C) 2013 Synopsys, Inc. All Rights Reserved. Unpublished rights reserved under US copyright laws. This program is protected by law and
More informationEE 560 MOS TRANSISTOR THEORY PART 2. Kenneth R. Laker, University of Pennsylvania
1 EE 560 MOS TRANSISTOR THEORY PART nmos TRANSISTOR IN LINEAR REGION V S = 0 V G > V T0 channel SiO V D = small 4 C GC C BC substrate depletion region or bulk B p nmos TRANSISTOR AT EDGE OF SATURATION
More informationIntegrated Circuits & Systems
Federal University of Santa Catarina Center for Technology Computer Science & Electronics Engineering Integrated Circuits & Systems INE 5442 Lecture 10 MOSFET part 1 guntzel@inf.ufsc.br ualwell TrenchIsolated
More informationChapter 4 FieldEffect Transistors
Chapter 4 FieldEffect Transistors Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 5/5/11 Chap 41 Chapter Goals Describe operation of MOSFETs. Define FET characteristics in operation
More informationEE105 Fall 2014 Microelectronic Devices and Circuits. NMOS Transistor Capacitances: Saturation Region
EE105 Fall 014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1 NMOS Transistor Capacitances: Saturation Region Drain no longer connected to channel
More information! MOS Capacitances. " Extrinsic. " Intrinsic. ! Lumped Capacitance Model. ! First Order Capacitor Summary. ! Capacitance Implications
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 7: February, 07 MOS SPICE Models, MOS Parasitic Details Lecture Outline! MOS Capacitances " Extrinsic " Intrinsic! Lumped Capacitance Model!
More informationLecture 12: MOSFET Devices
Lecture 12: MOSFET Devices GuYeon Wei Division of Engineering and Applied Sciences Harvard University guyeon@eecs.harvard.edu Wei 1 Overview Reading S&S: Chapter 5.1~5.4 Supplemental Reading Background
More informationSwitching circuits: basics and switching speed
ECE137B notes; copyright 2018 Switching circuits: basics and switching speed Mark Rodwell, University of California, Santa Barbara Amplifiers vs. switching circuits Some transistor circuit might have V
More informationEE105 Fall 2014 Microelectronic Devices and Circuits
EE05 Fall 204 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of BJT Amplifiers Emitter (CE) Collector (CC) Base (CB)
More informationEE105  Fall 2006 Microelectronic Devices and Circuits
EE105  Fall 2006 Microelectronic Devices and Circuits Prof. Jan M. Rabaey (jan@eecs) Lecture 7: MOS Transistor Some Administrative Issues Lab 2 this week Hw 2 due on We Hw 3 will be posted same day MIDTERM
More informationEECS 105: FALL 06 FINAL
University of California College of Engineering Department of Electrical Engineering and Computer Sciences Jan M. Rabaey TuTh 23:30 Wednesday December 13, 12:303:30pm EECS 105: FALL 06 FINAL NAME Last
More informationELEC 3908, Physical Electronics, Lecture 23. The MOSFET Square Law Model
ELEC 3908, Physical Electronics, Lecture 23 The MOSFET Square Law Model Lecture Outline As with the diode and bipolar, have looked at basic structure of the MOSFET and now turn to derivation of a current
More informationThe Gradual Channel Approximation for the MOSFET:
6.01  Electronic Devices and Circuits Fall 003 The Gradual Channel Approximation for the MOSFET: We are modeling the terminal characteristics of a MOSFET and thus want i D (v DS, v GS, v BS ), i B (v
More informationType Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23
NPN Silicon RF Transistor* For broadband amplifiers up to GHz and fast nonsaturated switches at collector currents from 0.5 ma to 0 ma Complementary type: BFT9 (PNP) * Short term description ESD (Electrostatic
More informationToday s lecture. EE141 Spring 2003 Lecture 4. Design Rules CMOS Inverter MOS Transistor Model
 Spring 003 Lecture 4 Design Rules CMOS Inverter MOS Transistor Model Today s lecture Design Rules The CMOS inverter at a glance An MOS transistor model for manual analysis Important! Labs start next
More informationBFP193. NPN Silicon RF Transistor*
NPN Silicon RF Transistor* For low noise, highgain amplifiers up to GHz For linear broadband amplifiers f T = 8 GHz, F = db at 900 MHz * Short term description ESD (Electrostatic discharge) sensitive device,
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 6: January 30, 2018 MOS Operating Regions, pt. 2 Lecture Outline! Operating Regions (review) " Subthreshold " Resistive " Saturation! Intro.
More informationClass 05: Device Physics II
Topics: 1. Introduction 2. NFET Model and Cross Section with Parasitics 3. NFET as a Capacitor 4. Capacitance vs. Voltage Curves 5. NFET as a Capacitor  Band Diagrams at V=0 6. NFET as a Capacitor  Accumulation
More informationMOS CAPACITOR AND MOSFET
EE336 Semiconductor Devices 1 MOS CAPACITOR AND MOSFET Dr. Mohammed M. Farag Ideal MOS Capacitor Semiconductor Devices Physics and Technology Chapter 5 EE336 Semiconductor Devices 2 MOS Capacitor Structure
More informationMOS Transistors. Prof. Krishna Saraswat. Department of Electrical Engineering Stanford University Stanford, CA
MOS Transistors Prof. Krishna Saraswat Department of Electrical Engineering S Stanford, CA 94305 saraswat@stanford.edu 1 1930: Patent on the FieldEffect Transistor! Julius Lilienfeld filed a patent describing
More informationThe Devices. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002
igital Integrated Circuits A esign Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The evices July 30, 2002 Goal of this chapter Present intuitive understanding of device operation Introduction
More informationELEC 3908, Physical Electronics, Lecture 18. The Early Effect, Breakdown and SelfHeating
ELEC 3908, Physical Electronics, Lecture 18 The Early Effect, Breakdown and SelfHeating Lecture Outline Previous 2 lectures analyzed fundamental static (dc) carrier transport in the bipolar transistor
More informationBipolar Junction Transistor (BJT)  Introduction
Bipolar Junction Transistor (BJT)  Introduction It was found in 1948 at the Bell Telephone Laboratories. It is a three terminal device and has three semiconductor regions. It can be used in signal amplification
More informationMOS Transistor Theory
CHAPTER 3 MOS Transistor Theory Outline 2 1. Introduction 2. Ideal IV Characteristics 3. Nonideal IV Effects 4. CV Characteristics 5. DC Transfer Characteristics 6. Switchlevel RC Delay Models MOS
More informationAppendix 1: List of symbols
Appendix 1: List of symbols Symbol Description MKS Units a Acceleration m/s 2 a 0 Bohr radius m A Area m 2 A* Richardson constant m/s A C Collector area m 2 A E Emitter area m 2 b Bimolecular recombination
More informationBFP196W. NPN Silicon RF Transistor*
NPN Silicon RF Transistor* For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 ma to 80 ma Power amplifier for DECT
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR181 RFs 1=B 2=E 3=C SOT23
NPN Silicon RF Transistor* For low noise, highgain broadband amplifiers at collector currents from 0.5 ma to ma f T = 8 GHz, F = 0.9 db at 900 MHz Pbfree (RoHS compliant) package ) Qualified according
More informationCircuits. L2: MOS Models2 (1 st Aug. 2013) B. Mazhari Dept. of EE, IIT Kanpur. B. Mazhari, IITK. GNumber
EE610: CMOS Analog Circuits L: MOS Models (1 st Aug. 013) B. Mazhari Dept. of EE, IIT Kanpur 3 NMOS Models MOS MODEL Above Threshold Subthreshold ( GS > TN ) ( GS < TN ) Saturation ti Ti Triode ( DS >
More informationLecture #27. The Short Channel Effect (SCE)
Lecture #27 ANNOUNCEMENTS Design Project: Your BJT design should meet the performance specifications to within 10% at both 300K and 360K. ( β dc > 45, f T > 18 GHz, V A > 9 V and V punchthrough > 9 V )
More informationSemiconductor Physics fall 2012 problems
Semiconductor Physics fall 2012 problems 1. An ntype sample of silicon has a uniform density N D = 10 16 atoms cm 3 of arsenic, and a ptype silicon sample has N A = 10 15 atoms cm 3 of boron. For each
More informationVidyalankar S.E. Sem. III [EXTC] Analog Electronics  I Prelim Question Paper Solution
. (a) S.E. Sem. [EXTC] Analog Electronics  Prelim Question Paper Solution Comparison between BJT and JFET BJT JFET ) BJT is a bipolar device, both majority JFET is an unipolar device, electron and minority
More informationSECTION: Circle one: Alam Lundstrom. ECE 305 Exam 5 SOLUTIONS: Spring 2016 April 18, 2016 M. A. Alam and M.S. Lundstrom Purdue University
NAME: PUID: SECTION: Circle one: Alam Lundstrom ECE 305 Exam 5 SOLUTIONS: April 18, 2016 M A Alam and MS Lundstrom Purdue University This is a closed book exam You may use a calculator and the formula
More informationLecture 4: CMOS Transistor Theory
Introduction to CMOS VLSI Design Lecture 4: CMOS Transistor Theory David Harris, Harvey Mudd College Kartik Mohanram and Steven Levitan University of Pittsburgh Outline q Introduction q MOS Capacitor q
More information6.012 Electronic Devices and Circuits
Page 1 of 1 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.12 Electronic Devices and Circuits Exam No. 1 Wednesday, October 7, 29 7:3 to 9:3
More informationBFP193. NPN Silicon RF Transistor* For low noise, highgain amplifiers up to 2 GHz For linear broadband amplifiers f T = 8 GHz, F = 1 db at 900 MHz
NPN Silicon RF Transistor* For low noise, highgain amplifiers up to GHz For linear broadband amplifiers f T = 8 GHz, F = db at 900 MHz Pbfree (RoHS compliant) package ) Qualified according AEC Q * Short
More informationLecture 37: Frequency response. Context
EECS 05 Spring 004, Lecture 37 Lecture 37: Frequency response Prof J. S. Smith EECS 05 Spring 004, Lecture 37 Context We will figure out more of the design parameters for the amplifier we looked at in
More information