SRAM AS5C K x 8 SRAM SRAM MEMORY ARRAY. PIN ASSIGNMENT (Top View) AVAILABLE AS MILITARY SPECIFICATION FEATURES GENERAL DESCRIPTION

Size: px

Start display at page:

Download "SRAM AS5C K x 8 SRAM SRAM MEMORY ARRAY. PIN ASSIGNMENT (Top View) AVAILABLE AS MILITARY SPECIFICATION FEATURES GENERAL DESCRIPTION"

Leslie Pope
5 years ago
Views:

1 512K x 8 MMORY ARRAY AVAIAB AS MIITARY SPCIFICATION SMD SMD MI STD-883 FATURS High Speed: 12, 15, 17, 20, 25, 35 and 45ns High-performance, low power military grade device Single +5V ±10% power supply asy memory expansion with C\ and O\ options All inputs and outputs are TT-compatible ase of upgradability from 1 Meg using the 32 pin evolutionary version. OPTIONS MARKING Timing 12ns access ns access ns access ns access ns access ns access ns access -45 Operating Temperature Range Military: -55 o C to +125 o C XT Industrial: -40 o C to +85 o C IT Packages Ceramic Dip (600 mil) CW No. 112 Ceramic Flatpack F No. 304 Ceramic CC C No. 209 Ceramic SOJ CJ No. 502 Options 2V data retention/ low power NOT: Not all combinations of operating temperature, speed, data retention and low power are necessarily available. Please contact factory for availability of specific part number combinations. A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 Vss PIN ASSIGNMNT (Top View) 32-Pin DIP (CW), 32-Pin CC (C) 32-Pin SOJ (CJ) A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 Vss Vcc A15 A17 W\ A13 A8 A9 A11 O\ A10 C\ I/O7 I/O6 I/O5 I/O4 I/O3 32-Pin Flat Pack (F) Vcc A15 A17 W\ A13 A8 A9 A11 O\ A10 C\ I/O7 I/O6 I/O5 I/O4 I/O3 GNRA DSCRIPTION The is a 4 megabit monolithic CMOS, organized as a 512K x 8. The evolutionary 32 pin device allows for easy upgrades from the 1 meg. For flexibility in high-speed memory applications, Micross offers chip enable (C\) and output enable (O\) capabilities. These enhancements can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (W\) and C\ inputs are both OW. Reading is accomplished when W\ remains HIGH and C\ and O\ go OW. This allows systems designers to meet low standby power requirements. All devices operate from a single +5V power supply and all inputs are fully TT-Compatible. 1 For more products and information please visit our web site at

2 FUNCTIONA BOCK DIAGRAM Vcc GND A0:A18 Input Buffer Row Decoder 2,097,152 Bit Memory Array I/O Control I/O7 I/O1 C\ Column Decoder Power Down O\ W\ TRUTH TAB 2

3 ABSOUT MAXIMUM RATINGS* Voltage on Vcc Supply Relative to Vss...-.5V to +7.0V Storage Temperature C to +150 C Short Circuit Output Current (per I/O)...20mA Voltage on any Pin Relative to Vss...-.5V to Vcc+1 V Maximum Junction Temperature** C *Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. xposure to absolute maximum rating conditions for extended periods may affect reliability. ** Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. CTRICA CHARACTRISTICS AND RCOMMNDD DC OPRATING CONDITIONS (-55 o C<T A <125 o C or -40 o C to +85 o C; Vcc = 5V +10%) PARAMTR CONDITION SYMBO MIN MAX UNITS NOTS Input High (ogic 1) Voltage V IH 2.2 V CC +0.5 V 1 Input ow (ogic 0) Voltage V I V 1, 2 Input eakage Current OV < V IN < Vcc I I μα Output eakage Current Output(s) disabled OV < V OUT < Vcc I O μα Output High Voltage I OH = -4.0 ma V OH V 1 Output ow Voltage I O = 8.0 ma V O V 1 Supply Voltage Vcc V 1 PARAMTR Power Supply Current: Operating CONDITIONS C\ < V I ; Vcc = MAX f = MAX = 1/t RC Outputs Open MAX SYM UNITS NOTS I CCSP ma 3 Version Only I CCP ma C\ > V IH ; Vcc = MAX f = 0, Outputs Open I SBTSP ma Power Supply Current: Standby Version Only I SBTP ma C\ < V CC -0.2V; Vcc = MAX V IN < Vss +0.2V or I SBCSP ma V IN > Vcc -0.2V; f = 0 Version Only I SBCP ma CAPACITANC PARAMTR CONDITIONS SYMBO MAX UNITS NOTS Input Capacitance T A = 25 o C, f = 1MHz C I 12 pf 4 Output Capactiance V IN = 0 Co 14 pf 4 3

4 CTRICA CHARACTRISTICS AND RCOMMNDD AC OPRATING CONDITIONS (-55 o C<T A <125 o C or -40 o C to +85 o C; Vcc = 5V +10%) DSCRIPTION SYM MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTS RAD CYC Read Cycle Time t RC ns Address Access Time t AA ns Chip nable Access Time t AC ns Output Hold From Address Change t OH ns Chip nable to Output in ow-z t ZC ns 4, 6, 7 Chip Disable to Output in High-Z t HZC ns 4, 6, 7 Output nable Acess Time t AO ns Output nable to Output in ow-z t ZO ns 4, 6, 7 Output Disable to Output in High-Z t HZO ns 4, 6, 7 WRIT CYC WRIT Cycle Time t WC ns Chip nable to nd of Write t CW ns Address Valid to nd of Write t AW ns Address Setup Time t AS ns Address Hold From nd of Write t AH ns WRIT Pulse Width t WP ns Data Setup Time t DS ns Data Hold Time t DH ns Write Disable to Output in ow-z t ZW ns 4, 6, 7 Write nable to Output in High-Z t HZW ns 4, 6, 7 4

5 AC TST CONDITIONS Input pulse levels... Vss to 3.0V Input rise and fall times... 3ns Input timing reference levels V Output reference levels V Output load... See Figures 1 and 2 Fig. 1 Output oad quivalent Fig. 2 Output oad quivalent NOTS 1. All voltages referenced to V SS (GND) V for pulse width < 20ns 3. I CC is dependent on output loading and cycle rates. 4. This parameter is guaranteed but not tested. 5. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. 6. t ZC, t ZW, t ZO, t HZC, t HZO and t HZW are specified with C = 5pF as in Fig. 2. Transition is measured ±200mV from steady state voltage. 7. At any given temperature and voltage condition, t HZC is less than t ZC, and t HZW is less than t ZW. 8. W\ is HIGH for RAD cycle. 9. Device is continuously selected. Chip enables and output enables are held in their active state. 10. Address valid prior to, or coincident with, latest occurring chip enable. 11. t RC = Read Cycle Time. 12. Chip enable and write enable can initiate and terminate a WRIT cycle. 13. Output enable (O\) is inactive (HIGH). 14. Output enable (O\) is active (OW). 15. ASI does not warrant functionality nor reliability of any product in which the junction temperature exceeds 150 C. Care should be taken to limit power to acceptable levels. DATA RTNTION CTRICA CHARACTRISTICS ( Version Only) DSCRIPTION CONDITIONS SYMBO MIN MAX UNITS NOTS V CC for Retention Data C\ > (Vcc -0.2V) VIN > (Vcc -0.2V) or < 0.2V V DR 2 V Data Retention Current ( Version Only) V CC = 2V I CCDR 4.5 ma Chip Deselect to Data Retention Time t CDR 0 ns 4 Operation Recovery Time t R 10 ms 4, 11 5

6 OW V CC DATA RTNTION WAVFORM DATA RTNTION MOD Vcc VDR >2V 4.5V 4.5V C\ V IH t CDR tcdr VDR t R tr V I RAD CYC NO. 1 8, 9 (Write nabled Controlled) t RC t AA t OH 7, 8, 10 RAD CYC NO. 2 (Write nabled Controlled) t RC t AO t - t AC t PU t PD 6

7 WRIT CYC NO (Chip nabled Controlled) t WC t AW t AS tcw t AH t WP t DS t DH 12, 13 WRIT CYC NO. 2 (Write nabled Controlled) t WC t AW t AH t CW t AS t WP1 t DS t DH t ZW t HZW 7

8 7, 12, 14 WRIT CYC NO. 3 (Write nable Controlled) ADDRSS t WC C\ t AW t CW t AH t AS t WP2 W\ t DS D Data Valid t HZW t ZW Q High-Z Don t Care Undefined 8

9 MCHANICA DFINITION* Micross Case #112 (Package Designator CW) SMD , Case Outline X D A 1 Pin 1 e b b1 1 b2 NOT: These dimensions are per the SMD. Micross package dimensional limits may differ, but they will be within the SMD limits. *All measurements are in inches. 9

10 MCHANICA DFINITION* Micross Case #304 (Package Designator F) SMD , Case Outline 9 e b D D1 Top View c A 2 Q NOT: These dimensions are per the SMD. Micross package dimensional limits may differ, but they will be within the SMD limits. *All measurements are in inches. 10

11 MCHANICA DFINITION* Micross Case #209 (Package Designator C) SMD , Case Outline Z A D1 D e b2 R A1 NOT: These dimensions are per the SMD. Micross package dimensional limits may differ, but they will be within the SMD limits. *All measurements are in inches. 11

12 MCHANICA DFINITION* Micross Case #502 (Package Designator CJ) A 2 TYP e D1 D A2 b 2 A1 MICROSS SPCIFICATIONS SYMBO MIN MAX A A A b D D e BSC NOT: This package meets SMD , Case Outline U dimensions in every aspect, except dimension 2. *All measurements are in inches. 12

13 ORDRING INFORMATION XAMP: C-20/883C XAMP: -45/883C Device Number Package Type C CJ C CJ C CJ C CJ C CJ C CJ Speed ns Options** Process Device Number Package Type F F F F F F Speed ns Options** Process XAMP: CW-25/883C Device Package Speed Number Type ns Options** Process CW -15 CW -17 CW -20 CW -25 CW -35 CW -45 *AVAIAB PROCSSS IT = Industrial Temperature Range XT = xtended Temperature Range 883C = Full Military Processing **DFINITION OF OPTIONS 2V Data Retention/ow Power -40 o C to +85 o C -55 o C to +125 o C -55 o C to +125 o C 13

14 MICROSS TO DSCC PART NUMBR CROSS RFRNC FOR * Micross Package Designator CW Micross Package Designator F Micross Part # SMD Part # Micross Part # SMD Part # CW QXA F Q9A CW QXA F Q9A CW QXA F Q9A CW QXA F Q9A CW QXA F Q9A CW QXA F Q9A CW QXA F Q9A CW QXA F Q9A CW MXA F M9A CW MXA F M9A CW MXA F M9A CW MXA F M9A CW MXA F M9A CW MXA F M9A CW MXA F M9A CW MXA F M9A Micross Package Designator C Micross Package Designator CJ Micross Part # SMD Part # Micross Part # SMD Part # C QZA CJ QUA C QZA CJ QUA C QZA CJ QUA C QZA CJ QUA C QZA CJ QUA C QZA CJ QUA C QZA CJ QUA C QZA CJ QUA C MZA CJ MUA C MZA CJ MUA C MZA CJ MUA C MZA CJ MUA C MZA CJ MUA C MZA CJ MUA C MZA CJ MUA C MZA CJ MUA * ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. 14

15 MICROSS TO DSCC PART NUMBR CROSS RFRNC FOR * Micross Package Designator CW Micross Package Designator F Micross Part # SMD Part # Micross Part # SMD Part # CW-12/H HYA F-12/H H9A CW-12/H HYA F-12/H H9A CW-15/H HYA F-15/H H9A CW-17/H HYA F-17/H H9A CW-17/H HYA F-17/H H9A CW-20/H HYA F-20/H H9A CW-20/H HYA F-20/H H9A CW-25/H HYA F-25/H H9A CW-25/H HYA F-25/H H9A CW-25/H HYA F-25/H H9A CW-25/H HYA F-25/H H9A CW-35/H HYA F-35/H H9A CW-35/H HYA F-35/H H9A CW-35/H HYA F-35/H H9A CW-35/H HYA F-35/H H9A CW-45/H HYA F-45/H H9A CW-45/H HYA F-45/H H9A CW-45/H HYA F-45/H H9A CW-45/H HYA F-45/H H9A CW-55/H HYA F-55/H H9A CW-55/H HYA F-55/H H9A CW-12/H HYC F-12/H H9C CW-12/H HYC F-12/H H9C CW-15/H HYC F-15/H H9C CW-17/H HYC F-17/H H9C CW-17/H HYC F-17/H H9C CW-20/H HYC F-20/H H9C CW-20/H HYC F-20/H H9C CW-25/H HYC F-25/H H9C CW-25/H HYC F-25/H H9C CW-25/H HYC F-25/H H9C CW-25/H HYC F-25/H H9C CW-35/H HYC F-35/H H9C CW-35/H HYC F-35/H H9C CW-35/H HYC F-35/H H9C CW-35/H HYC F-35/H H9C CW-45/H HYC F-45/H H9C CW-45/H HYC F-45/H H9C CW-45/H HYC F-45/H H9C CW-45/H HYC F-45/H H9C CW-55/H HYC F-55/H H9C CW-55/H HYC F-55/H H9C * ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. 15

16 MICROSS TO DSCC PART NUMBR CROSS RFRNC FOR * Micross Package Designator C Micross Package Designator CJ Micross Part # SMD Part # MicrossPart # SMD Part # C-12/H HMA CJ-12/H HTA C-12/H HMA CJ-12/H HTA C-15/H HMA CJ-15/H HTA C-17/H HMA CJ-17/H HTA C-17/H HMA CJ-20/H HTA C-20/H HMA CJ-25/H HTA C-20/H HMA CJ-25/H HTA C-25/H HMA CJ-25/H HTA C-25/H HMA CJ-35/H HTA C-25/H HMA CJ-45/H HTA C-25/H HMA CJ-17/H HTA C-35/H HMA CJ-20/H HTA C-35/H HMA CJ-25/H HTA C-35/H HMA CJ-35/H HTA C-35/H HMA CJ-35/H HTA C-45/H HMA CJ-35/H HTA C-45/H HMA CJ-45/H HTA C-45/H HMA CJ-45/H HTA C-45/H HMA CJ-45/H HTA C-55/H HMA CJ-55/H HTA C-55/H HMA CJ-55/H HTA C-12/H HMC CJ-12/H HTC C-12/H HMC CJ-12/H HTC C-15/H HMC CJ-15/H HTC C-17/H HMC CJ-20/H HTC C-17/H HMC CJ-17/H HTC C-20/H HMC CJ-25/H HTC C-20/H HMC CJ-25/H HTC C-25/H HMC CJ-25/H HTC C-25/H HMC CJ-35/H HTC C-25/H HMC CJ-45/H HTC C-25/H HMC CJ-17/H HTC C-35/H HMC CJ-20/H HTC C-35/H HMC CJ-25/H HTC C-35/H HMC CJ-35/H HTC C-35/H HMC CJ-35/H HTC C-45/H HMC CJ-35/H HTC C-45/H HMC CJ-45/H HTC C-45/H HMC CJ-45/H HTC C-45/H HMC CJ-45/H HTC C-55/H HMC CJ-55/H HTC C-55/H HMC CJ-55/H HTC * ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. 16

17 DOCUMNT TIT 512K x 8 MMORY ARRAY RVISION HISTORY Rev # History Release Date Status 6.3 Corrected A2 Measurement from base November 2009 Release to the bottom of the lead Removed CA Package 6.4 Added Micross Information January 2010 Release 17

SRAM AS5LC512K8. 512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT. PIN ASSIGNMENT (Top View)

SRAM AS5LC512K8. 512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT. PIN ASSIGNMENT (Top View) 512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT AVAILABLE AS MILITARY SPECIFICATIONS MIL-STD-883 for Ceramic Extended Temperature Plastic (COTS) FEATURES Ultra High Speed Asynchronous Operation