512K x 32 Static RAM CY7C1062AV33. Features. Functional Description. Logic Block Diagram. Selection Guide

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1 512K x 32 Static RAM Features High speed t AA = 8 ns Low active power 1080 mw (max.) Operating voltages of 3.3 ± 0.3V 2.0V data retention Automatic power-down when deselected TTL-compatible inputs and outputs Easy memory expansion with CE 1, CE 2, and CE 3 features Available in non Pb-free 119-ball PBGA package Functional Description The is a high-performance CMOS Static RAM organized as 524,288 words by 32 bits. Writing to the device is accomplished by enabling the chip (CE 1, CE 2, and CE 3 LOW) and forcing the Write Enable (WE) input LOW. If Byte Enable A (B A ) is LOW, then data from I/O pins (I/O 0 through I/O 7 ), is written into the location specified on the address pins (A 0 through A 18 ). If Byte Enable B (B B ) is LOW, then data from I/O pins (I/O 8 through I/O 15 ) is written into the location specified on the address pins (A 0 through A 18 ). Likewise, B C and B D correspond with the I/O pins I/O 16 to I/O 23 and I/O 24 to I/O 31, respectively. Reading from the device is accomplished by enabling the chip (CE 1, CE 2, and CE 3 LOW) while forcing the Output Enable (OE) LOW and Write Enable (WE) HIGH. If the first Byte Enable (B A ) is LOW, then data from the memory location specified by the address pins will appear on I/O 0 to I/O 7. If Byte Enable B (B B ) is LOW, then data from memory will appear on I/O 8 to I/O 15. Similarly, B c and B D correspond to the third and fourth bytes. See the truth table at the back of this data sheet for a complete description of read and write modes. The input/output pins (I/O 0 through I/O 31 ) are placed in a high-impedance state when the device is deselected (CE 1, CE 2 or CE 3 HIGH), the outputs are disabled (OE HIGH), the byte selects are disabled (B A-D HIGH), or during a write operation (CE 1, CE 2, and CE 3 LOW, and WE LOW). The is available in a 119-ball pitch ball grid array (PBGA) package. Logic Block Diagram A 0 A 1 A 2 A 3 A 4 A 5 A 6 A 7 A 8 ROW DECODER INPUT BUFFERS 512K x 32 ARRAY SENSE AMPS WE CE 1 CE 2 CE 3 OE B A B B B C B D I/O 0 I/O 31 A 9 COLUMN DECODER A 10 A 11 A 12 A 13 A 14 A 15 A 16 A 17 A 18 OUTPUT BUFFERS CONTROL LOGIC Selection Guide Unit Maximum Access Time ns Maximum Operating Current Com l ma Ind l Maximum CMOS Standby Current Com l/ind l ma Cypress Semiconductor Corporation 198 Champion Court San Jose, CA Document #: Rev. *F Revised August 3, 2006

2 Pin Configurations [1, 2] A B C D E F G H J K L M N P R T U 1 I/O 16 I/O 17 I/O 18 I/O 19 I/O 20 I/O 21 I/O 22 I/O 23 NC I/O 24 I/O 25 I/O 26 I/O 27 I/O 28 I/O 29 I/O 30 I/O ball PBGA (Top View) A A A A A I/O 0 A A CE 1 A A I/O 1 B c CE 2 NC CE 3 B a I/O 2 V DD V SS V SS V SS V DD I/O 3 V SS V DD V SS V DD V SS I/O 4 V DD V SS V SS V SS V DD I/O 5 V SS V DD V SS V DD V SS I/O 6 V DD V SS V SS V SS V DD I/O 7 V SS V DD V SS V DD V SS DNU V DD V SS V SS V SS V DD I/O 8 V SS V DD V SS V DD V SS I/O 9 V DD V SS V SS V SS V DD I/O 10 V SS V DD V SS V DD V SS I/O 11 V DD V SS V SS V SS V DD I/O 12 A A A B d NC B b A I/O 13 A WE A A I/O 14 A OE A A I/O NC pins are not connected on the die. 2. DNU pins have to be left floating or tied to VSS to ensure proper application. Document #: Rev. *F Page 2 of 9

3 Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature C to +150 C Ambient Temperature with Power Applied C to +125 C Supply Voltage on V CC to Relative GND [3] V to +4.6V DC Voltage Applied to Outputs in High-Z State [3] V to V CC + 0.5V DC Electrical Characteristics Over the Operating Range AC Test Loads and Waveforms [5] DC Input Voltage [3] V to V CC + 0.5V Current into Outputs (LOW) ma Operating Range Ambient Range Temperature V CC Commercial 0 C to +70 C 3.3V ± 0.3V Industrial 40 C to +85 C Parameter Description Test Conditions Min. Max. Min. Max. Min. Max. Unit V OH Output HIGH Voltage V CC = Min., I OH = 4.0 ma V V OL Output LOW Voltage V CC = Min., I OL = 8.0 ma V V IH Input HIGH Voltage 2.0 V CC V CC V CC V IL Input LOW Voltage [3] V I IX Input Leakage Current GND < V I < V CC µa I OZ Output Leakage Current GND < V OUT < V CC, Output µa Disabled I CC V CC Operating V CC = Max., Com l ma Supply Current f = f MAX = 1/t RC Ind l ma I SB1 I SB2 Capacitance [4] Automatic CE Power-down Current TTL Inputs Automatic CE Power-down Current CMOS Inputs Max. V CC, CE > V IH V IN > V IH or V IN < V IL, f = f MAX Max. V CC, CE > V CC 0.3V, V IN > V CC 0.3V, or V IN < 0.3V, f = 0 Com l/ Ind l ma ma Parameter Description Test Conditions Max. Unit C IN Input Capacitance T A = 25 C, f = 1 MHz, V CC = 3.3V 8 pf C OUT I/O Capacitance 10 pf V OUTPUT *Including Jig and Scope (a) 3.3V OUTPUT (b) Z 0 = 50Ω * 5 pf R1 317Ω 50Ω R2 351Ω V TH = 1.5V 30 pf Including all Components of Test Equipment 3.3V GND Rise time > 1 V/ns 10% ALL INPUT PULSES 90% THÉ VENIN EQUIVALENT 167Ω OUTPUT (c) 1.73V 90% 10% Fall time: > 1 V/ns 3. V IL (min.) = 2.0V for pulse durations of less than 20 ns. 4. Tested initially and after any design or process changes that may affect these parameters. 5. Valid SRAM operation does not occur until the power supplies have reached the minimum operating V DD (3.0V). As soon as 1 ms (T power ) after reaching the minimum operating V DD, normal SRAM operation can begin including reduction in V DD to the data retention (V CCDR, 2.0V) voltage. Document #: Rev. *F Page 3 of 9

4 AC Switching Characteristics Over the Operating Range [6] Parameter Description Min. Max. Min. Max. Min. Max. Unit Read Cycle t power V CC (typical) to the first access [7] ms t RC Read Cycle Time ns t AA Address to Data Valid ns t OHA Data Hold from Address Change ns t ACE CE 1, CE 2, or CE 3 LOW to Data Valid ns t DOE OE LOW to Data Valid ns t LZOE OE LOW to Low-Z [8] ns t HZOE OE HIGH to High-Z [8] ns t LZCE CE 1, CE 2, or CE 3 LOW to Low-Z [8] ns t HZCE CE 1, CE 2, or CE 3 HIGH to High-Z [8] ns t PU CE 1, CE 2, or CE 3 LOW to Power-up [9] ns t PD CE 1, CE 2, or CE 3 HIGH to Power-down [9] ns t DBE Byte Enable to Data Valid ns t LZBE Byte Enable to Low-Z [8] ns t HZBE Byte Disable to High-Z [8] ns [10, 11] Write Cycle t WC Write Cycle Time ns t SCE CE 1, CE 2, or CE 3 LOW to Write End ns t AW Address Set-up to Write End ns t HA Address Hold from Write End ns t SA Address Set-up to Write Start ns t PWE WE Pulse Width ns t SD Data Set-up to Write End ns t HD Data Hold from Write End ns t LZWE WE HIGH to Low-Z [8] ns t HZWE WE LOW to High-Z [8] ns t BW Byte Enable to End of Write ns Data Retention Waveform V CC 3.0V t CDR DATA RETENTION MODE V DR > 2V 3.0V t R CE 6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified I OL /I OH and transmission line loads. Test conditions for the read cycle use output loading as shown in (a) of AC Test Loads, unless specified otherwise. 7. This part has a voltage regulator that steps down the voltage from 3V to 2V internally. t power time has to be provided initially before a read/write operation is started. 8. t HZOE, t HZCE, t HZWE, t HZBE, and t LZOE, t LZCE, t LZWE, and t LZBE are specified with a load capacitance of 5 pf as in (b) of AC Test Loads. Transition is measured ± 200 mv from steady-state voltage. 9. These parameters are guaranteed by design and are not tested. 10. The internal write time of the memory is defined by the overlap of CE 1 LOW, CE 2 HIGH, CE 3 LOW, and WE LOW. The chip enables must be active and WE must be LOW to initiate a write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. 11. The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of t HZWE and t SD. Document #: Rev. *F Page 4 of 9

5 Switching Waveforms Read Cycle No. 1 [12, 13] t RC t OHA t AA DATA OUT PREVIOUS DATA VALID DATA VALID Read Cycle No. 2 (OE Controlled) [13, 14] t RC CE 1,CE 2,CE 3 t ACE OE B A, B B, B C, B D t DOE t LZOE t DBE t HZOE t HZCE DATA OUT t LZBE HIGH IMPEDANCE DATA VALID t HZBE HIGH IMPEDANCE V CC SUPPLY CURRENT t LZCE t PU 50% t PD 50% IICC I SB 12. Device is continuously selected. OE, CE, B A, B B, B C, B D = V IL. 13. WE is HIGH for read cycle. 14. Address valid prior to or coincident with CE transition LOW. Document #: Rev. *F Page 5 of 9

6 Switching Waveforms (continued) Write Cycle No. 1 (CE Controlled) [15, 16, 17] t WC CE t SA t SCE t AW t HA t PWE WE tbw B A, B B, B C, B D t SD t HD DATAI/O [15, 16, 17] Write Cycle No. 2 (BLE or BHE Controlled) t WC t SA t BW B A, B B, B C, B D t AW t HA t PWE WE t SCE CE t SD t HD DATAI/O 15. CE indicates a combination of all three chip enables. When ACTIVE LOW, CE indicates the CE 1, CE 2, and CE 3 are LOW. 16. Data I/O is high-impedance if OE or B A, B B, B C, B D = V IH. 17. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. Document #: Rev. *F Page 6 of 9

7 Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW) t WC CE t SCE t SA t AW t PWE t HA WE t BW B A, B B, B C, B D t HZWE t SD t HD DATA I/O t LZWE Truth Table CE 1 CE 2 CE 3 OE WE B A B B B c B D I/O 0 I/O 7 I/O 8 I/O 15 I/O 16 I/O 23 I/O 24 I/O 31 Mode Power H X X X X X X X X High-Z High-Z High-Z High-Z Power Down (I SB ) X H X X X X X X X High-Z High-Z High-Z High-Z Power Down (I SB ) X X H X X X X X X High-Z High-Z High-Z High-Z Power Down (I SB ) L L L L H L L L L Data Out Data Out Data Out Data Out Read All Bits (I CC ) L L L L H L H H H Data Out High-Z High-Z High-Z Read Byte A (I CC ) L L L L H H L H H High-Z Data Out High-Z High-Z Read Byte B (I CC ) L L L L H H H L H High-Z High-Z Data Out High-Z Read Byte C (I CC ) L L L L H H H H L High-Z High-Z High-Z Data Out Read Byte D (I CC ) L L L X L L L L L Data In Data In Data In Data In Write All Bits (I CC ) L L L X L L H H H Data In High-Z High-Z High-Z Write Byte A (I CC ) L L L X L H L H H High-Z Data In High-Z High-Z Write Byte B (I CC ) L L L X L H H L H High-Z High-Z Data In High-Z Write Byte C (I CC ) L L L X L H H H L High-Z High-Z High-Z Data In Write Byte D (I CC ) L L L H H X X X X High-Z High-Z High-Z High-Z Selected, Outputs Disabled (I CC ) Document #: Rev. *F Page 7 of 9

8 Ordering Information Speed (ns) Ordering Code Package Name Package Type Operating Range 8-8BGC ball (14 x 22 x 2.4 mm) PBGA Commercial 10-10BGC -10BGI Industrial 12-12BGC Commercial -12BGI Industrial Package Diagram 119-ball PBGA (14 x 22 x 2.4 mm) ( ) *B All product and company names mentioned in this document may be the trademarks of their respective holders. Document #: Rev. *F Page 8 of 9 Cypress Semiconductor Corporation, The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

Document History Page Document Title: 512K x 32 Static RAM Document Number: 38-05137 Orig. of REV. ECN NO.

9 Document History Page Document Title: 512K x 32 Static RAM Document Number: Orig. of REV. ECN NO. Issue Date Change Description of Change ** /27/02 HGK New Data Sheet *A /19/02 DFP Removed 15-ns bin and added 8-ns bin. Changed CE 2 TO CE 2. Changed C IN input capacitance from 6 pf to 8 pf. Changed C OUT output capacitance from 8 pf to 10 pf. *B /07/02 DFP Updated I CC, T sd, and T doe parameters. Removed note 7 (I Z /h Z comment). *C /13/02 DFP Final Data Sheet. Removed note 2. Added note 3 to AC Test Loads and Waveforms and note 7 to t pu and t pd. *D /25/03 MEG Changed ISB1 from 100 ma to 70 ma *E See ECN RKF Removed CE 2 waveform showing Active High signal timing on Page #5, and included it with the CE 1, CE 3 waveform Corrected Truth Table on page 7 with CE 2 active low information *F See ECN NXR Included note #1 and 2 on page #2 Changed the description of I IX from Input Load Current to Input Leakage Current in DC Electrical Characteristics table Updated Ordering Information Table Document #: Rev. *F Page 9 of 9

256K x 16 Static RAM CY7C1041BN. Features. Functional Description

256K x 16 Static RAM CY7C1041BN. Features. Functional Description 256K x 16 Static RAM Features Temperature Ranges Commercial: 0 C to 70 C Industrial: 40 C to 85 C Automotive-A: 40 C to 85 C High speed t AA = 15 ns Low active power 1540 mw (max.) Low CMOS standby power