SRAM AS5LC512K8. 512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT. PIN ASSIGNMENT (Top View)

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1 512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT AVAILABLE AS MILITARY SPECIFICATIONS MIL-STD-883 for Ceramic Extended Temperature Plastic (COTS) FEATURES Ultra High Speed Asynchronous Operation Fully Static, No Clocks Multiple center power and ground pins for improved noise immunity Easy memory expansion with and OE\ options All inputs and outputs are TTL-compatible Single +3.3V Power Supply +/- 0.3V Data Retention Functionality Testing Cost Efficient Plastic Packaging Extended Testing Over -55ºC to +125ºC for plastics RoHS Compliant Options Available PIN ASSIGNMENT (Top View) 36-Pin PSOJ (DJ) 36-Pin CLCC (EC) 36-Pin Flat Pack (F) OPTIONS MARKING Timing 10ns access ns access ns access ns access ns access -25 Operating Temperature Ranges 883C (-55 o C to +125 o C) /883C Military (-55 o C to +125 o C) /XT Industrial (-40 o C to +85 o C) /IT Package(s) Ceramic Flatpack F No. 307 Ceramic LCC EC No. 210 Plastic SOJ (400 mils wide) DJ 2V data retention/low power* L For more products and information please visit our web site at 1

2 GENERAL DESCRIPTION The is a 3.3V high speed SRAM. It offers flexibility in high-speed memory applications, with chip enable () and output enable (OE\) capabilities. These features can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and inputs are both LOW. Reading is accomplished when WE\ remains HIGH and and OE\ go LOW. As a option, the device can be supplied offering a reduced power standby mode, allowing system designers to meet low standby power requirements. This device operates from a single +3.3V power supply and all inputs and outputs are fully TTL-compatible. The DJ offers the convenience and reliability of the SRAM and has the cost advantage of a plastic encapsulation. TSOPII with copper lead frames offers superior thermal performance. FUNCTIONAL BLOCK DIAGRAM VCC GND A0-A18 INPUT BUFFER ROW DECODER 4,194,304-BIT MEMORY ARRAY 1024 ROWS X 4096 COLUMNS I/O CONTROLS DQ8 DQ1 COLUMN DECODER OE\ WE\ *POWER DOWN *On the low voltage Data Retention option. PIN FUNCTIONS TRUTH TABLE MODE OE\ WE\ I/O POWER STANDBY X H X HIGH-Z STANDBY READ L L H Q ACTIVE NOT SELECTED H L H HIGH-Z ACTIVE WRITE X L L D ACTIVE X = Don t Care A0 - A18 WE\ OE\ Address Input s Write Enable Chip Enable Output Enable I/O - I/ O Data Inputs/Output s 0 7 V CC V SS Power Ground NC No Connectio n 2

3 ABSOLUTE MAXIMUM RATINGS* *Stresses greater than those listed under Absolute Maximum Voltage on Vcc Supply Relative to Vss Ratings may cause permanent damage to the device. This Vcc...-.5V to 4.0V is a stress rating only and functional operation of the device Storage Temperature C to +150 C at these or any other conditions above those indicated in the Short Circuit Output Current (per I/O)...20mA operation section of this specification is not implied. Exposure Voltage on any Pin Relative to Vss...-.5V to 4.6V to absolute maximum rating conditions for extended periods Maximum Junction Temperature** C may affect reliability. Power Dissipation...1W ** Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow, and humidity. ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55 o C < T A < +125 o C & -40 o C < T A < +85 o C ; Vcc = 3.3V +0.3%) MAX DESCRIPTION CONDITIONS SYM UNITS NOTES < V IL ; Vcc = MAX Power Supply f = MAX = 1/t RC I CCSP ma Current: Operating Outputs Open 3, 2 "L" Version Only I CCLP ma > V IH, All other inputs < V IL, Vcc = MAX, f = 0, Outputs Open I SBTSP ma Power Supply Current: Standby > Vcc -0.2V; Vcc = MAX V IN <Vss +0.2V or V IN >Vcc -0.2V; f = 0 "L" Version Only I SBTLP ma I SBCSP ma "L" Version Only I SBCLP ma µ µ CAPACITANCE PARAMETER CONDITIONS SYMBOL MAX UNITS NOTES Input Capacitance T A = 25 o C, f = 1MHz C I 8 pf 4 Output Capactiance V IN = 0 Co 6 pf 4 3

4 ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (-55 o C < T A < +125 o C or -40 o C to +85 o C; Vcc = 3.3V +0.3%) DESCRIPTION SYM MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES READ CYCLE Read Cycle Time t RC ns Address Access Time t AA ns Chip Enable Access Time t ACE ns Output Hold From Address Change t OH ns Chip Enable to Output in Low-Z t LZCE ns 4, 6, 7 Chip Disable to Output in High-Z t HZCE ns 4, 6, 7 Output Enable Acess Time t AOE ns Output Enable to Output in Low-Z t LZOE ns 4, 6, 7 Output Disable to Output in High-Z t HZOE ns 4, 6, 7 WRITE CYCLE WRITE Cycle Time t WC ns Chip Enable to End of Write t CW ns Address Valid to End of Write t AW ns Address Setup Time t AS ns Address Hold From End of Write t AH ns WRITE Pulse Width t WP ns Data Setup Time t DS ns Data Hold Time t DH ns Write Disable to Output in Low-Z t LZWE ns 4, 6, 7 Write Enable to Output in High-Z t HZWE ns 4, 6, 7 4

5 AC TEST CONDITIONS Input pulse levels... Vss to 3.0V Input rise and fall times... 3ns Input timing reference levels V Output reference levels V Output load... See Figures 1 and 2 3.3V Q Z O =50 R L = pf V L = 1.5V Q pf Fig. 1 Output Load Equivalent Fig. 2 Output Load Equivalent NOTES 1. All voltages referenced to V SS (GND). 2. I CC limit shown is for absolute worst case switching of ADDR, ADDR\, ADDR, etc. 3. I CC is dependent on output loading and cycle rates. 4. This parameter is guaranteed but not tested. 5. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. 6. t LZCE, t LZWE, t LZOE, t HZCE, t HZOE and t HZWE are specified with CL = 5pF as in Fig. 2. Transition is measured ±200mV from steady state voltage. 7. At any given temperature and voltage condition, t HZCE is less than t LZCE, and t HZWE is less than t LZWE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip enables and output enables are held in their active state. 10. Address valid prior to, or coincident with, latest occurring chip enable. 11. t RC = Read Cycle Time. 12. Chip enable and write enable can initiate and terminate a WRITE cycle. 13. Output enable (OE\) is inactive (HIGH). 14. Output enable (OE\) is active (LOW). 15. ASI does not warrant functionality nor reliability of any product in which the junction temperature exceeds 150 C. Care should be taken to limit power to acceptable levels. DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only) DESCRIPTION CONDITIONS SYM MIN MAX UNITS NOTES Vcc for Retention Data > V CC -0.2V V IN > V CC -0.2 or 0.2V V DR 2 V Data Retention Current Vcc = 2.0V I CCDR 6.5 ma Chip Deselect to Data t CDR 0 ns 4 Operation Recovery Time t R 20 ms 4, 11 5

6 LOW V CC DATA RETENTION WAVEFORM DATA RETENTION MODE V CC 3.0V 3.0V V DR > 2V t CDR t R V IH - V IL - V DR READ CYCLE NO. 1 1, 2 (Address Controlled, = OE\ = V IL, WE\ = V IH ) ADDRESS t RC VALID t OH t AA I/O, DATA IN & OUT Previous Data Valid Data Valid READ CYCLE NO. 2 (WE\ = V IH ) ADDRESS t RC t AOE t LZOE t HZOE t LZCE t ACE t HZCE I/O, DATA IN & OUT High-Z t PU Data Valid t PD Icc NOTES: 1. WE\ is HIGH for READ cycle. 2. Device is continuously selected. Chip enables and output enables are held in their active state. Don t Care Undefined 6

7 WRITE CYCLE NO. 1 1 (CE Controlled) ADDRESS t AS t WC t AW t CW t AH WE\ t WP1 t DS t DH I/O, DATA IN Data Valid I/O, DATA OUT High-Z High-Z WRITE CYCLE NO. 2 1, 2 (Write Enabled Controlled) ADDRESS t WC t AW t CW t AH t AS WE\ t WP1 t DH I/O, DATA IN Data Valid I/O, DATA OUT High-Z High-Z NOTES: 1. Chip enable and write enable can initiate and terminate a WRITE cycle. 2. Output enable (OE\) is inactive (HIGH). 7

8 1, 2, 3 WRITE CYCLE NO. 3 (WE Controlled) ADDRESS t WC t AW t CW t AH t AS WE\ t WP2 t DS t DH DATA IN Data Valid DATA OUT Data Undefined t HZWE High-Z t LZWE NOTES: 1. At any given temperature and voltage condition, t HZCE is less than t LZCE, and t HZWE is less than t LZWE. 2. Chip enable and write enable can initiate and terminate a WRITE cycle. 3. Output enable (OE\) is active (LOW). 8

9 MECHANICAL DEFINITIONS* Micross Case #307 (Package Designator F) L E Pin 1 identifier area 36 1 e b D D1 Bottom View S Top View c A E2 Q MICROSS SPECIFICATIONS SYMBOL MIN MAX A b c D D E E e BSC L Q *All measurements are in inches. 9

10 MECHANICAL DEFINITIONS* Package Designator DJ MICROSS SPECIFICATIONS SYMBOL MIN MAX A A A B b C D E E E2 e BSC BSC *All measurements are in inches. 10

11 MECHANICAL DEFINITIONS* Micross Case #210 (Package Designator EC) P Pin 1 identifier area A R L2 1 D 36 L e B D1 E A1 MICROSS SPECIFICATIONS SYMBOL MIN MAX A A B D D E e L BSC TYP L P R TYP *All measurements are in inches. 11

12 ORDERING INFORMATION 36-Pin Ceramic Flat Pack EXAMPLE: F-12L/XT Device Number Package Type Speed ns Options** Process F -10 L /* F -12 L /* F -15 L /* F -25 L /* 36-Pin Plastic PSOJ EXAMPLE: DJ-20L/IT Device Number Package Speed Type ns Options** Process DJ -12 L /* DJ -15 L /* DJ -20 L /* DJ -25 L /* 36-Pin Ceramic CLCC EXAMPLE: EC-15L/IT Device Number Package Speed Type ns Options** Process EC -12 L /* EC -15 L /* EC -20 L /* EC -25 L /* *AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing 1-40 o C to +85 o C -55 o C to +125 o C -55 o C to +125 o C **OPTIONS DEFINITIONS L = 2V Data Retention / Low Power NOTES: C process available with ceramic packaging only. 12

13 DOCUMENT TITLE 512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT Rev # History Release Date Status 2.1 Pg 1: Changed 0.3% to 0.3V August 2009 Release 2.2 Updated Micross Information January 2010 Release 2.3 Expanded package offering to include March 2011 Release Copper Lead Frames and RoHS Compliancy, added -10 speed option, Reduced C L from 9pF to 8pF, corrected t HZWE from min s to max s on page 4, corrected 4.5V reference points on data retention waveform to 3.0V, pg Removed Cu-lead frame option October 2013 Release 13

SRAM AS5C512K8. 512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT. PIN ASSIGNMENT (Top View) AVAILABLE AS MILITARY SPECIFICATIONS FEATURES

SRAM AS5C512K8. 512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT. PIN ASSIGNMENT (Top View) AVAILABLE AS MILITARY SPECIFICATIONS FEATURES 512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT AVAILABLE AS MILITARY SPECIFICATIONS SMD 5962-95600 SMD 5962-95613 MIL-STD-883 FEATURES Ultra High Speed Asynchronous Operation Fully Static, No