EC/EE DIGITAL ELECTRONICS
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1 EC/EE 214(R-15) Total No. of Questions :09] [Total No. of Pages : 02 II/IV B.Tech. DEGREE EXAMINATIONS, DECEMBER First Semester EC/EE DIGITAL ELECTRONICS Time: Three Hours 1. a) Define Encoder Answer Question No.1 Compulsory. Answer One Question from each Unit. b) Represent 15,26 in base 4 format c) How can you find a XS-3 code value from a 4 bit binary code d) Define Synchronous sequential circuit. e) Draw DTL circuit of OR gate f) Prove XOR and XNOR are complements each other g) Define Gray code h) Draw full adder using half addres and any basic gate i) Represent 27 in XS-3 format j) (491) 10 =( ) 5 k) Difference between latch and flip flop l) Define State model UNIT-I Maximum marks:60 12X1=12 M 4X12=48 M 2. a) Represent F(A,B,C,D)= (A+C)(B+C)(A 1 +D 1 )B 1 in standard canonical form. b) Define full Subtractor? Explain with truth table. 3. a) Using 10s complement, subtract i) ii) b) Draw the truth table of gray to binary converter with logic diagram. UNIT-II 4. a) Implement f= (0,1, 4, 6,8,10,12,13,15) using 2X1 MUX. b) Draw the circuit of BCD adder and explain. 5. a) Draw & Explain 7 segment decoder with truth table. b) Design f= (0,1,3, 6,8,9,10,12,13,15) using DeMUX. 1 P.T.O
2 UNIT-III 6. a) Explain about Synchronous ripple counter. b) Derive the characteristic equation of JK flip flop 7. Design and perform left shift and right shift for the data UNIT-IV 8. a) Write about Mealy state model b) Explain the state machine capabilities and limitations in detail. 9. a) Draw the circuit for Moore type FSM b) Compare Mealy and Moore type FSM 2
3 EC/EE/EI 214 (CR) Total No. of Questions :09] [Total No. of Pages : 02 II/IV B.Tech. DEGREE EXAMINATIONS, DECEMBER First Semester EC/EE/EI ELECTRONIC DEVICES & CIRCUITS Time: Three Hours Answer Question No.1 Compulsory. Answer One Question from each Unit. 1. a) Write the difference between Donor and Acceptor b) What is Forbidden energy band? c) Define Hall effect d) What is depletion region e) Define Rectifier f) Define Static resistance g) Write the applications of LED h) Draw the basic structure of PN diode i) Draw the circuit diagram of CC configuration j) Define stability factor k) List the modes of operation of BJT l) Define operating point m) List the merits of JFET n) Compare DMOSFET and EMOSFET UNIT-I 2. a) Discuss the structures of Intrinsic and Extrinsic semiconductors b) Explain the terms carrier drift and carrier diffusion. 3. a) Derive the equations for Hall voltage and Hall coefficient. Maximum marks:70 14X1=14 M 4X14=56 M b) Write a short notes on Statistical machines and electrical conduction in solids. UNIT-II 4. a) Explain the V-I characteristics PN junction diode b) Derive the equations for Transition capacitance and Diffusion capacitance. 5. a) Write the differences between Half wave and Full wave rectifiers b) Draw and explain the energy band structure of Tunnel diode. 1 P.T.O
4 UNIT-III 6. a) Explain the modes of operation of NPN transistor. b) Explain input and output characteristics of CE configuration. 7. a) Derive the equation for stability factor for fixed bias. b) A transistor self bias circuit having V cc =24V, R c =2 K, =50, V BEact =0.2V, R 1 =100K, R 2 =5K, and R E =100 calculate I B, VCE, I C and stability factor. UNIT-IV 8. a) Why JFET is called voltage controlled device? Explain with neat diagrams. b) Explain the Capacitance-Voltage characteristics of MOSFET 9. a) Explain Non-ideal effects of junction field effect transistor b) Draw ad explain two terminal MOS structure. 2
5 EC/EE/EI 214 (RR) Total No. of Questions :09] [Total No. of Pages : 02 II/IV B.Tech. DEGREE EXAMINATIONS, DECEMBER First Semester EC/EE/EI ELECTRONIC DEVICES Time: Three Hours 1. a) What is doping Answer Question No.1 Compulsory. Answer One Question from each Unit. b) What is carrier life time c) What is extrinsic semi conductor? d) Compare V-I characteristics of G e and S i for PN diode e) Write the specifications of diode? f) Draw the circuit diagram of CC configuration g) Compare PNP and NPN transistors. h) What is base width modulation? i) Define stabilization? j) Draw the diode compensation circuit k) Why the gate current is neglected l) Draw the construction diagram of UJT. m) Why FET called voltage controlled device? n) What is threshold voltage V T? UNIT-I 2. a) Classify the materials based on the energy band diagram. b) Draw and explain Fermi levels in an intrinsic semi conductor. 3. a) Explain Hall effect with neat diagram. b) With suitable equations explain Law of mass action. UNIT-II 4. a) Explain Quantitative theory of PN junction diode b) Compare LED and LCD and write its applications. 5. a) Explain diffusion capacitance of PN diode and write its limitations b) Draw and explain V-I characteristics Avalanche diode. 1 Maximum marks:70 14X1=14 M 4X14=56 M P.T.O
6 UNIT-III 6. a) Explain the construction and operation of NPN Transistor. b) Derive the equation for stability factor for voltage divider bias. 7. a) Draw and explain the input and output characteristics of Common Emitter Configuration. b) Write short notes on (i) Photo transistor (ii) Thermal stability UNIT-IV 8. a) Describe the operation Depletion type MOSFET b) With suitable expressions explain the self biasing method for JFET? 9. a) Explain two transistors analogy of SCR and write its merits and demerits. b) Explain the construction and characteristics of TRAIC. 2
7 EC/EE/EI 214 (CR) Total No. of Questions :09] [Total No. of Pages : 02 II/IV B.Tech. DEGREE EXAMINATIONS, APRIL/MAY First Semester EC/EE/EI ELECTRONIC DEVICES & CIRCUITS Time: Three Hours Answer Question No.1 Compulsory Answer ONE question from each Unit 1. a. Write the difference between Insulator and Semiconductor. b. What is extrinsic semiconductor? c. What is Accepter? d. Define Fermi level? e. Define cutin voltage f. Define Ripple factor g. Write the applications of PN junction diode h. Define Diffusion capacitance. i. Define Q point? j. Draw the circuit of fixed bias k. What is current amplification factor? l. What is base width modulation? m. Write the difference between EMOSFET and DMOSFET n. Write the applications of FET 2. a. Explain the Density of states function. UNIT-I b. Derive the equations for Hall voltage and Hall coefficient. 3. a. Explain the statistics of Donors and Acceptors Maximum marks:70 14X1=14 M 4X14=56 M b. Write a short notes on (i) Graded impurity distribution (ii) Fermi level UNIT-II 4. a. Explain the basic structure of PN Junction Diode. b. For a silicon diode, ND N A. The internal contact potential is 0.5 V and a reverse voltage of 10V is applied to the junction. If the concentration of donor impurity is per cm 3, calculate electric field intensity and transition capacitance per unit area. 1 P.T.O
8 5. a. Explain the principle of operation of LED and write its applications. b. Derive the equation for ripple factor and efficiency of half wave rectifier. UNIT-III 6. a. Compare CB,CE and CC configurations. b. Explain the principle of operation of photo transistor and write its applications. 7. a. Define stability factor and Derive the equation for stability factor for voltage divider bias. b. Write a short note on (i) Thermal Runaway (ii) Bias stability UNIT-IV 8. a. Describe the operation of n-channel JFET. b. Draw and explain Two terminal MOS structure. 9. a. Draw and explain the characteristics of Enhancement type MOSFET b. Explain Non-ideal effects of junction field effect transistor. 2
9 EC/EE/EI 214 (RR) Total No. of Questions :09] [Total No. of Pages : 02 II/IV B.Tech. DEGREE EXAMINATIONS, APRIL/MAY First Semester EC/EE/EI ELECTRONIC DEVICES Time: Three Hours Answer Question No.1 Compulsory Answer ONE question from each Unit 1. a. Define conductivity. b. What is Diffusion Current? c. Define Fermi level d. Define Diffusion capacitance e. Define Cutin voltage f. What is valley voltage? g. Write the applications of varactor diode h. Define early effect. i. What is biasing? j. Define Thermal Stability. k. Draw the construction diagram of SCR. l. What is unipolar device? Write example m. Write the difference between BJT and JFET? n. Write the applications of DIAC? UNIT-I 2. a. Explain the carrier concentration in an intrinsic semi conductor. b. Derive the Diode current equation. Maximum marks:70 14X1=14 M 4X14=56 M 3. a. How to determine whether a given semiconductor is n-type or p-type? Explain in detail. b. State and explain Law of mass action. UNIT-II 4. a. Derive and explain Diffusion and Transition capacitances. b. Explain the breakdown mechanisms of Zener diode. 5. a. Explain the Temperature effects on PN diode. b. Write a note on (i) Varactor diode (ii) Photo diode P.T.O
10 UNIT-III 6. a. Draw and explain the current components in NPN and PNP transistors b. What is current amplification factor? Derive the relation between and 7. a. Derive the equation for stability factor for self bias for BJT. b. Write a short note on (i) Diode compensation (ii) Sensistor compensation UNIT-IV 8. a. With suitable expressions explain the voltage divider bias for JFET. b. Draw and explain the characteristics of enhancement type MOSFET. 9. a. Explain the constructional details and characteristics of TRAIC and write its Applications. b. Describe the operation and characteristics of UJT with neat diagram. 2
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