Session 0: Review of Solid State Devices. From Atom to Transistor
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1 Session 0: Review of Solid State Devices From Atom to Transistor 1
2 Objective To Understand: how Diodes, and Transistors operate! p n p+ n p- n+ n+ p 2
3 21 Century Alchemy! Ohm s law resistivity Resistivity is characteristic of the material Art of VLSI design is: to put together materials with different resistivity's next to each other to perform a certain task. Conductor Al, Cu SiO 2 10 Ω 10 Ω Insulator 3
4 Periodic Table of Elements Bohr Atomic Model Abbreviated Periodic Table wave-particle duality de Broglie standing wave Energy Bands: 4
5 Bohr Atomic Model Single atom: 2 atoms: N atoms: 2N electrons forbidden energies allowed energies Pauli exclusion principle 5
6 Materials Conductor 10 Semi-conductor 10 Insulator Ω Conduction band Conduction band N electrons Valance band 2N states E G (Si) = 1eV E G (Ge) = 0.7eV Valance band E G (SiO 2 ) = 9eV 2N states empty seat / filled seat 6
7 Intrinsic Semiconductor Covalent bands Valance electrons +4 Si
8 Intrinsic Semiconductor electron density hole density Covalent bands hole free electron +4 Si Valance electrons useless!! 8
9 n-type Semiconductor Donor: P, As, Sb electron density hole density Covalent bands free electron for each dopant +4 P Si Valance electrons
10 p-type Semiconductor Acceptor: B, Ga, In Covalent bands hole for each dopant electron density hole density +4 B Si Valance electrons
11 Energy Diagrams Potential Energy Kinetic Energy 11
12 Energy Diagrams 12
13 Energy Diagrams 13
14 Density of States Azadi stadium Boxing stadium In Stadium: Number of available seats could be a function of distance from the center so. : number of available states for the electrons could be function of Energy : Seats are not the same for fans so empty states for electrons! 14
15 Fermi Function Probability of Electron Distribution 1 1 is called the Fermi energy or the Fermi level. If we are 3kT away from the Fermi energy then we might use Boltzmann approximation: if 1 if # of electrons at energy E 0 1 # of holes at energy E
16 Materials Conductor 10 Semi-conductor 10 Insulator Ω Conduction band Conduction band N electrons Valance band 2N states E G (Si) = 1eV E G (Ge) = 0.7eV Valance band E G (SiO 2 ) = 9eV 2N states empty seat / filled seat 16
17 Electron / Holes : Intrinsic intrinsic # of electrons at energy E 1 # of holes at energy E
18 Electron / Holes : n-type n-type # of electrons at energy E 1 # of holes at energy E
19 Electron / Holes : p-type p-type # of electrons at energy E 1 # of holes at energy E
20 Fermi Energy intrinsic n-type p-type 20
21 Fermi Energy p-type n-type p-type n-type 21
22 Flow of Charge Drift Electric field gravitational field Diffusion Charges move to be evenly distributed throughout space. Similar to perfume in room or heat in a solid 22
23 PN Junction p n 23
24 PN junctions p n 24
25 PN junctions p n Depletion region 25
26 PN junctions p n depletion region 26
27 PN junctions, Reverse Biased p n depletion region 27
28 PN junctions, Forward Biased p n depletion region 28
29 BJT Electrostatics pnp Emitter Base Collector p+ n p- Under normal operating conditions, the BJT may be viewed electrostatically as two independent pn junctions 29
30 BJT Electrostatics pnp Emitter Base Collector p+ n p- Under normal operating conditions, the BJT may be viewed electrostatically as two independent pn junctions 30
31 BJT Electrostatics pnp Emitter Base Collector p+ n p- 31
32 JFET Junction FET Gate Source n p+ 2 Drain p+ Gate 32
33 JFET n p+ 2 p+ ~0 33
34 JFET n p+ 2 p+ 0 34
35 JFET n p+ 2 p+ ~0 35
36 JFET n p+ 2 p+ ~0 36
37 JFET n p+ 2 2 p
38 Qualitative Theory of the NMOSFET SiO2 A A n+ n+ 0 0 p The potential barrier to electron flow from the source into the channel region is lowered by applying V GS > V T 38
39 Qualitative Theory of the NMOSFET n+ n+ 0 p 0 n+ n+ 0 p n+ n+ p 39
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