Session 0: Review of Solid State Devices. From Atom to Transistor

Size: px
Start display at page:

Download "Session 0: Review of Solid State Devices. From Atom to Transistor"

Transcription

1 Session 0: Review of Solid State Devices From Atom to Transistor 1

2 Objective To Understand: how Diodes, and Transistors operate! p n p+ n p- n+ n+ p 2

3 21 Century Alchemy! Ohm s law resistivity Resistivity is characteristic of the material Art of VLSI design is: to put together materials with different resistivity's next to each other to perform a certain task. Conductor Al, Cu SiO 2 10 Ω 10 Ω Insulator 3

4 Periodic Table of Elements Bohr Atomic Model Abbreviated Periodic Table wave-particle duality de Broglie standing wave Energy Bands: 4

5 Bohr Atomic Model Single atom: 2 atoms: N atoms: 2N electrons forbidden energies allowed energies Pauli exclusion principle 5

6 Materials Conductor 10 Semi-conductor 10 Insulator Ω Conduction band Conduction band N electrons Valance band 2N states E G (Si) = 1eV E G (Ge) = 0.7eV Valance band E G (SiO 2 ) = 9eV 2N states empty seat / filled seat 6

7 Intrinsic Semiconductor Covalent bands Valance electrons +4 Si

8 Intrinsic Semiconductor electron density hole density Covalent bands hole free electron +4 Si Valance electrons useless!! 8

9 n-type Semiconductor Donor: P, As, Sb electron density hole density Covalent bands free electron for each dopant +4 P Si Valance electrons

10 p-type Semiconductor Acceptor: B, Ga, In Covalent bands hole for each dopant electron density hole density +4 B Si Valance electrons

11 Energy Diagrams Potential Energy Kinetic Energy 11

12 Energy Diagrams 12

13 Energy Diagrams 13

14 Density of States Azadi stadium Boxing stadium In Stadium: Number of available seats could be a function of distance from the center so. : number of available states for the electrons could be function of Energy : Seats are not the same for fans so empty states for electrons! 14

15 Fermi Function Probability of Electron Distribution 1 1 is called the Fermi energy or the Fermi level. If we are 3kT away from the Fermi energy then we might use Boltzmann approximation: if 1 if # of electrons at energy E 0 1 # of holes at energy E

16 Materials Conductor 10 Semi-conductor 10 Insulator Ω Conduction band Conduction band N electrons Valance band 2N states E G (Si) = 1eV E G (Ge) = 0.7eV Valance band E G (SiO 2 ) = 9eV 2N states empty seat / filled seat 16

17 Electron / Holes : Intrinsic intrinsic # of electrons at energy E 1 # of holes at energy E

18 Electron / Holes : n-type n-type # of electrons at energy E 1 # of holes at energy E

19 Electron / Holes : p-type p-type # of electrons at energy E 1 # of holes at energy E

20 Fermi Energy intrinsic n-type p-type 20

21 Fermi Energy p-type n-type p-type n-type 21

22 Flow of Charge Drift Electric field gravitational field Diffusion Charges move to be evenly distributed throughout space. Similar to perfume in room or heat in a solid 22

23 PN Junction p n 23

24 PN junctions p n 24

25 PN junctions p n Depletion region 25

26 PN junctions p n depletion region 26

27 PN junctions, Reverse Biased p n depletion region 27

28 PN junctions, Forward Biased p n depletion region 28

29 BJT Electrostatics pnp Emitter Base Collector p+ n p- Under normal operating conditions, the BJT may be viewed electrostatically as two independent pn junctions 29

30 BJT Electrostatics pnp Emitter Base Collector p+ n p- Under normal operating conditions, the BJT may be viewed electrostatically as two independent pn junctions 30

31 BJT Electrostatics pnp Emitter Base Collector p+ n p- 31

32 JFET Junction FET Gate Source n p+ 2 Drain p+ Gate 32

33 JFET n p+ 2 p+ ~0 33

34 JFET n p+ 2 p+ 0 34

35 JFET n p+ 2 p+ ~0 35

36 JFET n p+ 2 p+ ~0 36

37 JFET n p+ 2 2 p

38 Qualitative Theory of the NMOSFET SiO2 A A n+ n+ 0 0 p The potential barrier to electron flow from the source into the channel region is lowered by applying V GS > V T 38

39 Qualitative Theory of the NMOSFET n+ n+ 0 p 0 n+ n+ 0 p n+ n+ p 39

CLASS 12th. Semiconductors

CLASS 12th. Semiconductors CLASS 12th Semiconductors 01. Distinction Between Metals, Insulators and Semi-Conductors Metals are good conductors of electricity, insulators do not conduct electricity, while the semiconductors have

More information

Spring Semester 2012 Final Exam

Spring Semester 2012 Final Exam Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters

More information

Classification of Solids

Classification of Solids Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples

More information

Electronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices

Electronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices Electronic Circuits 1 Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage

More information

Charge Carriers in Semiconductor

Charge Carriers in Semiconductor Charge Carriers in Semiconductor To understand PN junction s IV characteristics, it is important to understand charge carriers behavior in solids, how to modify carrier densities, and different mechanisms

More information

EC/EE DIGITAL ELECTRONICS

EC/EE DIGITAL ELECTRONICS EC/EE 214(R-15) Total No. of Questions :09] [Total No. of Pages : 02 II/IV B.Tech. DEGREE EXAMINATIONS, DECEMBER- 2016 First Semester EC/EE DIGITAL ELECTRONICS Time: Three Hours 1. a) Define Encoder Answer

More information

Current mechanisms Exam January 27, 2012

Current mechanisms Exam January 27, 2012 Current mechanisms Exam January 27, 2012 There are four mechanisms that typically cause currents to flow: thermionic emission, diffusion, drift, and tunneling. Explain briefly which kind of current mechanisms

More information

CME 300 Properties of Materials. ANSWERS: Homework 9 November 26, As atoms approach each other in the solid state the quantized energy states:

CME 300 Properties of Materials. ANSWERS: Homework 9 November 26, As atoms approach each other in the solid state the quantized energy states: CME 300 Properties of Materials ANSWERS: Homework 9 November 26, 2011 As atoms approach each other in the solid state the quantized energy states: are split. This splitting is associated with the wave

More information

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and cross-sectional area 100µm 2

More information

Section 12: Intro to Devices

Section 12: Intro to Devices Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals Bond Model of Electrons and Holes Si Si Si Si Si Si Si Si Si Silicon

More information

n N D n p = n i p N A

n N D n p = n i p N A Summary of electron and hole concentration in semiconductors Intrinsic semiconductor: E G n kt i = pi = N e 2 0 Donor-doped semiconductor: n N D where N D is the concentration of donor impurity Acceptor-doped

More information

Review of Semiconductor Fundamentals

Review of Semiconductor Fundamentals ECE 541/ME 541 Microelectronic Fabrication Techniques Review of Semiconductor Fundamentals Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Page 1 Semiconductor A semiconductor is an almost insulating material,

More information

Electronics The basics of semiconductor physics

Electronics The basics of semiconductor physics Electronics The basics of semiconductor physics Prof. Márta Rencz, Gergely Nagy BME DED September 16, 2013 The basic properties of semiconductors Semiconductors conductance is between that of conductors

More information

Mat E 272 Lecture 25: Electrical properties of materials

Mat E 272 Lecture 25: Electrical properties of materials Mat E 272 Lecture 25: Electrical properties of materials December 6, 2001 Introduction: Calcium and copper are both metals; Ca has a valence of +2 (2 electrons per atom) while Cu has a valence of +1 (1

More information

8. Schottky contacts / JFETs

8. Schottky contacts / JFETs Technische Universität Graz Institute of Solid State Physics 8. Schottky contacts / JFETs Nov. 21, 2018 Technische Universität Graz Institute of Solid State Physics metal - semiconductor contacts Photoelectric

More information

ECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed)

ECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed) ECE-342 Test 2 Solutions, Nov 4, 2008 6:00-8:00pm, Closed Book (one page of notes allowed) Please use the following physical constants in your calculations: Boltzmann s Constant: Electron Charge: Free

More information

R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition. Figures for Chapter 6

R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition. Figures for Chapter 6 R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition Figures for Chapter 6 Free electron Conduction band Hole W g W C Forbidden Band or Bandgap W V Electron energy Hole Valence

More information

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits Spring 2008 MIDTERM EXAMINATION #1 Time

More information

Schottky diodes. JFETs - MESFETs - MODFETs

Schottky diodes. JFETs - MESFETs - MODFETs Technische Universität Graz Institute of Solid State Physics Schottky diodes JFETs - MESFETs - MODFETs Quasi Fermi level When the charge carriers are not in equilibrium the Fermi energy can be different

More information

Introduction to Transistors. Semiconductors Diodes Transistors

Introduction to Transistors. Semiconductors Diodes Transistors Introduction to Transistors Semiconductors Diodes Transistors 1 Semiconductors Typical semiconductors, like silicon and germanium, have four valence electrons which form atomic bonds with neighboring atoms

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006 UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm 2 Name: SID: Closed book. Two sheets of notes are

More information

MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University

MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University Practice Final Exam 1 Read the questions carefully Label all figures

More information

Semiconductor Physics fall 2012 problems

Semiconductor Physics fall 2012 problems Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each

More information

David J. Starling Penn State Hazleton PHYS 214

David J. Starling Penn State Hazleton PHYS 214 Being virtually killed by a virtual laser in a virtual space is just as effective as the real thing, because you are as dead as you think you are. -Douglas Adams, Mostly Harmless David J. Starling Penn

More information

II/IV B.Tech (Regular/Supplementary) DEGREE EXAMINATION. Answer ONE question from each unit.

II/IV B.Tech (Regular/Supplementary) DEGREE EXAMINATION. Answer ONE question from each unit. 14ECEI302/EC 212 1. Answer all questions (1X12=12 Marks) a What are the applications of linked list? b Compare singly linked list and doubly linked list. c Define ADT. d What are the basic operations of

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006 UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm I Name: Closed book. One sheet of notes is allowed.

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 23, 2018 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2018 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor

More information

Electro - Principles I

Electro - Principles I Electro - Principles I Page 10-1 Atomic Theory It is necessary to know what goes on at the atomic level of a semiconductor so the characteristics of the semiconductor can be understood. In many cases a

More information

Introduction to Semiconductor Physics. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India

Introduction to Semiconductor Physics. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India Introduction to Semiconductor Physics 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India http://folk.uio.no/ravi/cmp2013 Review of Semiconductor Physics Semiconductor fundamentals

More information

Semiconductor Physics Problems 2015

Semiconductor Physics Problems 2015 Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and M-K Lee 1. The purest semiconductor crystals it is possible

More information

EE 3329 Electronic Devices Syllabus ( Extended Play )

EE 3329 Electronic Devices Syllabus ( Extended Play ) EE 3329 - Electronic Devices Syllabus EE 3329 Electronic Devices Syllabus ( Extended Play ) The University of Texas at El Paso The following concepts can be part of the syllabus for the Electronic Devices

More information

Bohr s Model, Energy Bands, Electrons and Holes

Bohr s Model, Energy Bands, Electrons and Holes Dual Character of Material Particles Experimental physics before 1900 demonstrated that most of the physical phenomena can be explained by Newton's equation of motion of material particles or bodies and

More information

Avalanche breakdown. Impact ionization causes an avalanche of current. Occurs at low doping

Avalanche breakdown. Impact ionization causes an avalanche of current. Occurs at low doping Avalanche breakdown Impact ionization causes an avalanche of current Occurs at low doping Zener tunneling Electrons tunnel from valence band to conduction band Occurs at high doping Tunneling wave decays

More information

A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced.

A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced. Semiconductor A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced. Page 2 Semiconductor materials Page 3 Energy levels

More information

SOLID STATE ELECTRONICS DIGITAL ELECTRONICS SOFT CONDENSED MATTER PHYSICS

SOLID STATE ELECTRONICS DIGITAL ELECTRONICS SOFT CONDENSED MATTER PHYSICS SOLID STATE ELECTRONICS DIGITAL ELECTRONICS SOFT CONDENSED MATTER PHYSICS The energy band occupied by the valence electrons is called valence band and is the highest filled band. Bnd occupied by the electrons

More information

Electronic Devices & Circuits

Electronic Devices & Circuits Electronic Devices & Circuits For Electronics & Communication Engineering By www.thegateacademy.com Syllabus Syllabus for Electronic Devices Energy Bands in Intrinsic and Extrinsic Silicon, Carrier Transport,

More information

electronics fundamentals

electronics fundamentals electronics fundamentals circuits, devices, and applications THOMAS L. FLOYD DAVID M. BUCHLA Lesson 1: Diodes and Applications Semiconductors Figure 1-1 The Bohr model of an atom showing electrons in orbits

More information

EECS130 Integrated Circuit Devices

EECS130 Integrated Circuit Devices EECS130 Integrated Circuit Devices Professor Ali Javey 9/18/2007 P Junctions Lecture 1 Reading: Chapter 5 Announcements For THIS WEEK OLY, Prof. Javey's office hours will be held on Tuesday, Sept 18 3:30-4:30

More information

Electronic Circuits for Mechatronics ELCT 609 Lecture 2: PN Junctions (1)

Electronic Circuits for Mechatronics ELCT 609 Lecture 2: PN Junctions (1) Electronic Circuits for Mechatronics ELCT 609 Lecture 2: PN Junctions (1) Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Electronic (Semiconductor) Devices P-N Junctions (Diodes): Physical

More information

Conductivity and Semi-Conductors

Conductivity and Semi-Conductors Conductivity and Semi-Conductors J = current density = I/A E = Electric field intensity = V/l where l is the distance between two points Metals: Semiconductors: Many Polymers and Glasses 1 Electrical Conduction

More information

Introduction to Power Semiconductor Devices

Introduction to Power Semiconductor Devices ECE442 Power Semiconductor Devices and Integrated Circuits Introduction to Power Semiconductor Devices Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Semiconductor Devices Applications System Ratings

More information

ITT Technical Institute ET215 Devices I Unit 1

ITT Technical Institute ET215 Devices I Unit 1 ITT Technical Institute ET215 Devices I Unit 1 Chapter 1 Chapter 2, Sections 2.1-2.4 Chapter 1 Basic Concepts of Analog Circuits Recall ET115 & ET145 Ohms Law I = V/R If voltage across a resistor increases

More information

SEMICONDUCTOR DIODE. Unbiased (non-polarized) PN junction

SEMICONDUCTOR DIODE. Unbiased (non-polarized) PN junction SEMICONDUCTOR DIODE Semiconductor diode is an electronic element made of different types of extrinsic semiconductor: N-type semiconductor doped by donor impurities and P-type semiconductor doped by acceptor

More information

Appendix 1: List of symbols

Appendix 1: List of symbols Appendix 1: List of symbols Symbol Description MKS Units a Acceleration m/s 2 a 0 Bohr radius m A Area m 2 A* Richardson constant m/s A C Collector area m 2 A E Emitter area m 2 b Bimolecular recombination

More information

Engineering 2000 Chapter 8 Semiconductors. ENG2000: R.I. Hornsey Semi: 1

Engineering 2000 Chapter 8 Semiconductors. ENG2000: R.I. Hornsey Semi: 1 Engineering 2000 Chapter 8 Semiconductors ENG2000: R.I. Hornsey Semi: 1 Overview We need to know the electrical properties of Si To do this, we must also draw on some of the physical properties and we

More information

EE 346: Semiconductor Devices

EE 346: Semiconductor Devices EE 346: Semiconductor Devices Lecture - 6 02/06/2017 Tewodros A. Zewde 1 DENSTY OF STATES FUNCTON Since current is due to the flow of charge, an important step in the process is to determine the number

More information

Chap. 11 Semiconductor Diodes

Chap. 11 Semiconductor Diodes Chap. 11 Semiconductor Diodes Semiconductor diodes provide the best resolution for energy measurements, silicon based devices are generally used for charged-particles, germanium for photons. Scintillators

More information

The Devices: MOS Transistors

The Devices: MOS Transistors The Devices: MOS Transistors References: Semiconductor Device Fundamentals, R. F. Pierret, Addison-Wesley Digital Integrated Circuits: A Design Perspective, J. Rabaey et.al. Prentice Hall NMOS Transistor

More information

Semiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr.

Semiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr. Semiconductor Devices and Circuits Fall 2003 Midterm Exam Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering Name: Mat. -Nr.: Guidelines: Duration of the Midterm: 1 hour The exam is a closed

More information

Lecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor

Lecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Lecture 15 OUTLINE MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Electrostatics t ti Charge vs. voltage characteristic Reading: Chapter 6.1 6.2.1 EE105 Fall 2007

More information

Lecture 2. Semiconductor Physics. Sunday 4/10/2015 Semiconductor Physics 1-1

Lecture 2. Semiconductor Physics. Sunday 4/10/2015 Semiconductor Physics 1-1 Lecture 2 Semiconductor Physics Sunday 4/10/2015 Semiconductor Physics 1-1 Outline Intrinsic bond model: electrons and holes Charge carrier generation and recombination Intrinsic semiconductor Doping:

More information

Unit IV Semiconductors Engineering Physics

Unit IV Semiconductors Engineering Physics Introduction A semiconductor is a material that has a resistivity lies between that of a conductor and an insulator. The conductivity of a semiconductor material can be varied under an external electrical

More information

Section 12: Intro to Devices

Section 12: Intro to Devices Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si

More information

Semiconductor Physics and Devices

Semiconductor Physics and Devices The pn Junction 1) Charge carriers crossing the junction. 3) Barrier potential Semiconductor Physics and Devices Chapter 8. The pn Junction Diode 2) Formation of positive and negative ions. 4) Formation

More information

The Devices. Jan M. Rabaey

The Devices. Jan M. Rabaey The Devices Jan M. Rabaey Goal of this chapter Present intuitive understanding of device operation Introduction of basic device equations Introduction of models for manual analysis Introduction of models

More information

Session 6: Solid State Physics. Diode

Session 6: Solid State Physics. Diode Session 6: Solid State Physics Diode 1 Outline A B C D E F G H I J 2 Definitions / Assumptions Homojunction: the junction is between two regions of the same material Heterojunction: the junction is between

More information

Semiconductors 1. Explain different types of semiconductors in detail with necessary bond diagrams. Intrinsic semiconductors:

Semiconductors 1. Explain different types of semiconductors in detail with necessary bond diagrams. Intrinsic semiconductors: Semiconductors 1. Explain different types of semiconductors in detail with necessary bond diagrams. There are two types of semi conductors. 1. Intrinsic semiconductors 2. Extrinsic semiconductors Intrinsic

More information

! CMOS Process Enhancements. ! Semiconductor Physics. " Band gaps. " Field Effects. ! MOS Physics. " Cut-off. " Depletion.

! CMOS Process Enhancements. ! Semiconductor Physics.  Band gaps.  Field Effects. ! MOS Physics.  Cut-off.  Depletion. ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 3, 018 MOS Transistor Theory, MOS Model Lecture Outline! CMOS Process Enhancements! Semiconductor Physics " Band gaps " Field Effects!

More information

Chapter 7. The pn Junction

Chapter 7. The pn Junction Chapter 7 The pn Junction Chapter 7 PN Junction PN junction can be fabricated by implanting or diffusing donors into a P-type substrate such that a layer of semiconductor is converted into N type. Converting

More information

Capacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009

Capacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009 Wilfrid Laurier University June 4, 2009 Capacitor an electronic device which consists of two conductive plates separated by an insulator Capacitor an electronic device which consists of two conductive

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 24, 2017 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2017 Khanna Lecture Outline! Semiconductor Physics " Band gaps "

More information

Lecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations

Lecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations Lecture 1 OUTLINE Basic Semiconductor Physics Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations Reading: Chapter 2.1 EE105 Fall 2007 Lecture 1, Slide 1 What is a Semiconductor? Low

More information

Qualitative Picture of the Ideal Diode. G.R. Tynan UC San Diego MAE 119 Lecture Notes

Qualitative Picture of the Ideal Diode. G.R. Tynan UC San Diego MAE 119 Lecture Notes Qualitative Picture of the Ideal Diode G.R. Tynan UC San Diego MAE 119 Lecture Notes Band Theory of Solids: From Single Attoms to Solid Crystals Isolated Li atom (conducting metal) Has well-defined, isolated

More information

Lecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor

Lecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Lecture 15 OUTLINE MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Electrostatics Charge vs. voltage characteristic Reading: Chapter 6.1 6.2.1 EE15 Spring 28 Lecture

More information

Extensive reading materials on reserve, including

Extensive reading materials on reserve, including Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 29, 2019 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2019 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor

More information

Semiconductor Physics fall 2012 problems

Semiconductor Physics fall 2012 problems Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each

More information

Most matter is electrically neutral; its atoms and molecules have the same number of electrons as protons.

Most matter is electrically neutral; its atoms and molecules have the same number of electrons as protons. Magnetism Electricity Magnetism Magnetic fields are produced by the intrinsic magnetic moments of elementary particles associated with a fundamental quantum property, their spin. -> permanent magnets Magnetic

More information

Chapter 12: Electrical Properties. RA l

Chapter 12: Electrical Properties. RA l Charge carriers and conduction: Chapter 12: Electrical Properties Charge carriers include all species capable of transporting electrical charge, including electrons, ions, and electron holes. The latter

More information

16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE. Energy Band Diagram of Conductor, Insulator and Semiconductor:

16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE. Energy Band Diagram of Conductor, Insulator and Semiconductor: 16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE Energy bands in Intrinsic and Extrinsic silicon: Energy Band Diagram of Conductor, Insulator and Semiconductor: 1 2 Carrier transport: Any motion

More information

UNIT I: Electronic Materials.

UNIT I: Electronic Materials. SIDDHARTH INSTITUTE OF ENGINEERING & TECHNOLOGY :: PUTTUR Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK (DESCRIPTIVE) Subject with Code: SEMICONDUCTOR PHYSICS (18HS0851) Course & Branch: B.Tech

More information

Metal-oxide-semiconductor field effect transistors (2 lectures)

Metal-oxide-semiconductor field effect transistors (2 lectures) Metal-ide-semiconductor field effect transistors ( lectures) MOS physics (brief in book) Current-voltage characteristics - pinch-off / channel length modulation - weak inversion - velocity saturation -

More information

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00 1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions.

More information

Chapter 2 The Well 9/5/2017. E E 480 Introduction to Analog and Digital VLSI Paul M. Furth New Mexico State University

Chapter 2 The Well 9/5/2017. E E 480 Introduction to Analog and Digital VLSI Paul M. Furth New Mexico State University hapter 2 The Well E E 480 Introduction to Analog and Digital VLSI Paul M. Furth New Mexico State University p+ sub ~ 150 m thick, p-epi ~ 30 m thick All transistors go in p- epi layer Typical p- doping

More information

Chapter 13 Small-Signal Modeling and Linear Amplification

Chapter 13 Small-Signal Modeling and Linear Amplification Chapter 13 Small-Signal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 13-1 Chapter Goals Understanding of concepts related to: Transistors

More information

figure shows a pnp transistor biased to operate in the active mode

figure shows a pnp transistor biased to operate in the active mode Lecture 10b EE-215 Electronic Devices and Circuits Asst Prof Muhammad Anis Chaudhary BJT: Device Structure and Physical Operation The pnp Transistor figure shows a pnp transistor biased to operate in the

More information

Lecture (02) PN Junctions and Diodes

Lecture (02) PN Junctions and Diodes Lecture (02) PN Junctions and Diodes By: Dr. Ahmed ElShafee ١ I Agenda N type, P type semiconductors N Type Semiconductor P Type Semiconductor PN junction Energy Diagrams of the PN Junction and Depletion

More information

Introduction to Engineering Materials ENGR2000. Dr.Coates

Introduction to Engineering Materials ENGR2000. Dr.Coates Introduction to Engineering Materials ENGR2000 Chapter 18: Electrical Properties Dr.Coates 18.2 Ohm s Law V = IR where R is the resistance of the material, V is the voltage and I is the current. l R A

More information

Midterm I - Solutions

Midterm I - Solutions UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Spring 2008 Professor Chenming Hu Midterm I - Solutions Name: SID: Grad/Undergrad: Closed

More information

ECE 440 Lecture 20 : PN Junction Electrostatics II Class Outline:

ECE 440 Lecture 20 : PN Junction Electrostatics II Class Outline: ECE 440 Lecture 20 : PN Junction Electrostatics II Class Outline: Depletion Approximation Step Junction Things you should know when you leave Key Questions What is the space charge region? What are the

More information

ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems

ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Lec 6: September 14, 2015 MOS Model You are Here: Transistor Edition! Previously: simple models (0 and 1 st order) " Comfortable

More information

Lecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Review: MOSFET N-Type, P-Type. Semiconductor Physics.

Lecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Review: MOSFET N-Type, P-Type. Semiconductor Physics. ESE 57: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 24, 217 MOS Transistor Theory, MOS Model Lecture Outline! Semiconductor Physics " Band gaps " Field Effects! MOS Physics " Cutoff

More information

Introduction to Semiconductor Devices

Introduction to Semiconductor Devices Physics 233 Experiment 48 Introduction to Semiconductor Devices References 1. G.W. Neudeck, The PN Junction Diode, Addison-Wesley MA 1989 2. Background notes (Appendix A) 3. Specification sheet for Diode

More information

MOS Capacitors ECE 2204

MOS Capacitors ECE 2204 MOS apacitors EE 2204 Some lasses of Field Effect Transistors Metal-Oxide-Semiconductor Field Effect Transistor MOSFET, which will be the type that we will study in this course. Metal-Semiconductor Field

More information

4.2 Molecular orbitals and atomic orbitals Consider a linear chain of four identical atoms representing a hypothetical molecule.

4.2 Molecular orbitals and atomic orbitals Consider a linear chain of four identical atoms representing a hypothetical molecule. 4. Molecular orbitals and atomic orbitals Consider a linear chain of four identical atoms representing a hypothetical molecule. Suppose that each atomic wavefunction is 1s wavefunction. This system of

More information

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation

More information

Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. The Devices. July 30, Devices.

Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. The Devices. July 30, Devices. Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The July 30, 2002 1 Goal of this chapter Present intuitive understanding of device operation Introduction

More information

Lecture 11: J-FET and MOSFET

Lecture 11: J-FET and MOSFET ENE 311 Lecture 11: J-FET and MOSFET FETs vs. BJTs Similarities: Amplifiers Switching devices Impedance matching circuits Differences: FETs are voltage controlled devices. BJTs are current controlled devices.

More information

UNIT - IV SEMICONDUCTORS AND MAGNETIC MATERIALS

UNIT - IV SEMICONDUCTORS AND MAGNETIC MATERIALS 1. What is intrinsic If a semiconductor is sufficiently pure, then it is known as intrinsic semiconductor. ex:: pure Ge, pure Si 2. Mention the expression for intrinsic carrier concentration of intrinsic

More information

Chapter 6: Field-Effect Transistors

Chapter 6: Field-Effect Transistors Chapter 6: Field-Effect Transistors slamic University of Gaza Dr. Talal Skaik FETs vs. BJTs Similarities: Amplifiers Switching devices mpedance matching circuits Differences: FETs are voltage controlled

More information

3 Minority carrier profiles (the hyperbolic functions) Consider a

3 Minority carrier profiles (the hyperbolic functions) Consider a Microelectronic Devices and Circuits October 9, 013 - Homework #3 Due Nov 9, 013 1 Te pn junction Consider an abrupt Si pn + junction tat as 10 15 acceptors cm -3 on te p-side and 10 19 donors on te n-side.

More information

EE143 Fall 2016 Microfabrication Technologies. Evolution of Devices

EE143 Fall 2016 Microfabrication Technologies. Evolution of Devices EE143 Fall 2016 Microfabrication Technologies Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1-1 Evolution of Devices Yesterday s Transistor (1947) Today s Transistor (2006) 1-2 1 Why

More information

Operation and Modeling of. The MOS Transistor. Second Edition. Yannis Tsividis Columbia University. New York Oxford OXFORD UNIVERSITY PRESS

Operation and Modeling of. The MOS Transistor. Second Edition. Yannis Tsividis Columbia University. New York Oxford OXFORD UNIVERSITY PRESS Operation and Modeling of The MOS Transistor Second Edition Yannis Tsividis Columbia University New York Oxford OXFORD UNIVERSITY PRESS CONTENTS Chapter 1 l.l 1.2 1.3 1.4 1.5 1.6 1.7 Chapter 2 2.1 2.2

More information

ESE 372 / Spring 2013 / Lecture 5 Metal Oxide Semiconductor Field Effect Transistor

ESE 372 / Spring 2013 / Lecture 5 Metal Oxide Semiconductor Field Effect Transistor Metal Oxide Semiconductor Field Effect Transistor V G V G 1 Metal Oxide Semiconductor Field Effect Transistor We will need to understand how this current flows through Si What is electric current? 2 Back

More information

ELECTRONIC DEVICES AND CIRCUITS SUMMARY

ELECTRONIC DEVICES AND CIRCUITS SUMMARY ELECTRONIC DEVICES AND CIRCUITS SUMMARY Classification of Materials: Insulator: An insulator is a material that offers a very low level (or negligible) of conductivity when voltage is applied. Eg: Paper,

More information

Concept of Core IENGINEERS- CONSULTANTS LECTURE NOTES SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU. Page 1

Concept of Core IENGINEERS- CONSULTANTS LECTURE NOTES SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU. Page 1 Concept of Core Conductivity of conductor and semiconductor can also be explained by concept of Core. Core: Core is a part of an atom other than its valence electrons. Core consists of all inner shells

More information

Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination

Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination The Metal-Semiconductor Junction: Review Energy band diagram of the metal and the semiconductor before (a)

More information

Consider a uniformly doped PN junction, in which one region of the semiconductor is uniformly doped with acceptor atoms and the adjacent region is

Consider a uniformly doped PN junction, in which one region of the semiconductor is uniformly doped with acceptor atoms and the adjacent region is CHAPTER 7 The PN Junction Consider a uniformly doped PN junction, in which one region of the semiconductor is uniformly doped with acceptor atoms and the adjacent region is uniformly doped with donor atoms.

More information

Higher Physics. Electricity. Summary Notes. Monitoring and measuring a.c. Current, potential difference, power and resistance

Higher Physics. Electricity. Summary Notes. Monitoring and measuring a.c. Current, potential difference, power and resistance Higher Physics Electricity Summary Notes Monitoring and measuring a.c. Current, potential difference, power and resistance Electrical sources and internal resistance Capacitors Conductors, semiconductors

More information

The Science & Engineering of Materials Semiconductors. 주요반도체재료에서전자와홀의 mobility 대표적인값은? 어떤 carrier 가빠른지?

The Science & Engineering of Materials Semiconductors. 주요반도체재료에서전자와홀의 mobility 대표적인값은? 어떤 carrier 가빠른지? 18.6 Semiconductors 주요반도체재료에서전자와홀의 mobility 대표적인값은? 어떤 carrier 가빠른지? 18.6 Semiconductors [Fig. 18-16] - + When a voltage is applied to a semiconductor, the electrons move through the conduction band, while

More information