A Robustness Optimization of SRAM Dynamic Stability by Sensitivity-based Reachability Analysis
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1 ASP-DAC 2014 A Robustness Optimization of SRAM Dynamic Stability by Sensitivity-based Reachability Analysis Yang Song, Sai Manoj P. D. and Hao Yu School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
2 Outline SRAM Robustness Optimization Problem Reachability Analysis by Zonotope Safety Distance and Large-signal Sensitivity SRAM Reliability Optimization Experimental Results Summary 31 January
3 SRAM Robustness Optimization Stability verification and robustness optimization become hard for SRAM circuits Process variations, mismatch among transistors cause failures at advanced nodes Static noise margin (SNM): overestimates read failure and underestimates write failure Dynamic stability margin is adopted by deploying critical word-line pulse-width How to verify and optimize? 31 January
4 Previous Work of SRAM Verification V 2 State equilibrium (V dd, V dd ) V th b Failure region Accept region Instate equilibrium 0 V th a Search for points on boundary of failure region in parameter space* 1. (0,0) State equilibrium Separatrix: boundary separating two stable regions in parameter space* 2 V 1 Confined in 2-D space, i.e. only two parameters considered. * 1 W. Dong and et.al. ICCAD, 2008 * 2 G M Huanag and et.al. IEEE Int. BMAS Workshop, January
5 Write Failure Analysis by Safety Distance BL 0 Initial state (v1,v2) = (vdd, 0) Target state (v1, v2) = (0, vdd) M1 v1 M5 1 M3 discharging WL vdd 0 M2 M4 v2 V th4 M6 charging V th6 BR Vdd V2 Safety distance Write Failure Separatrix 0 V1 Vdd Threshold voltage variation causes difficulty to move state point to the target state. A B Safety Distance is the Euclidean distance in the state space between the operating and the safe state region. 31 January
6 Read Failure Analysis by Safety Distance Initial state (v1,v2) = (vdd, 0) Target state (v1, v2) = (Vdd,0) Internal state is aimed to maintain regardless perturbation during read operation. BL 1 WL vdd M1 M2 v1 M5 0 v2 1 M3 M4 M6 charging BR Vdd V2 0 Read Failure A V1 B Safety distance Vdd Mismatch between M4 and M6 Mismatch among M January
7 SRAM Nonlinear Dynamics Nonlinear dynamics of SRAM can be defined as d q x t, t + f x t, t + u t = 0. dt Based on mean-value theorem, f(x) at neighborhood of the nominal point Charges x can be State expressed vector Input by linear approximation with 2 nd order residue as d dt q x, t + f x, t + u t + G x x Assuming q(x,t) can be decomposed d dt q x, t + f x, t) + u (t = 0 d C x + G x + L = 0 dt 31 January 2014 C = q x x=x G = f x x=x (x x ) T 2 f x 2 x=ξ x x = 0. Linearization error Nonlinear dynamics at nominal point Linear dynamics at nominal point 7
8 SRAM Verification by Reachability Analysis State-variable space Separatrix trajectory Fast verification of SRAM nonlinear dynamics by reachability analysis Variations from multiple sources considered at the same time For example, transconductance of multiple transistors considering variation in their widths can be added as follows g m = g m W W 31 January
9 Reachability Analysis: Unidirectional Zonotope Initial Set Trajectory Final Set Safe region z uni = c + Approximated Reachable Set Zonotope Set of points in n-dimensional polygon with generator g (i) Unidirectional zonotope e i=1 β i g (i), 0 β i 1 (1) g Unidirectional zonotope Zonotope 31 January (2) g c (3) g Safety distance
10 Reachability Analysis with Uncertain Parameters d dt q x, t + f x, t) + u (t = 0 d C x + G x + L = 0 dt SPICE-like simulator Backward Euler method Backward Euler method with discretized time-step h at k-th iteration by x k (i) = A 1 ( C h x(i) k 1 L k ) Euclidean distance A = C h + G Considering all parameter variations as zonotope, linear Multi-step integration for reachability analysis X k = A 1 ( C h X k 1 L k ) X k = x k (1),, x k (m) Zonotope generator matrix 31 January
11 Reachability Analysis with Uncertain Parameters Parameter variations can be considered by the interval matrix A which is represented by a matrix zonotope. Zonotope matrix represented in terms of interval-valued matrices as A A (0) A i i, A 0 + A (i) in which each matrix zonotope generator A (i) contains the variation range of a parameter. A (i) = A(0) i W = G (i) W The inverse of A width variations is approximated as follows A 1 = A (0) 1,, A (0) 1 A (m) A (0) 1 Inverse of A (0) is computed by LU decomposition i 31 January
12 SRAM Robustness Optimization Problem Optimization of SRAM dynamic stability is modeled as a minimum value problem. min F(w) S. T. W min < w i < W max BL M5 M1 v1 M3 WL vdd M2 M4 v2 M6 BR Safety distance for write operation Pulse width Due to symmetric structure, w R 3 1 F w = D w w, t w + D r w, t r, write and read failures D w w, t w, only write failure D r w, t r, only read failure Safety distance for read operation 31 January
13 Large-signal Sensitivity of Safety Distance p safe Safe region Safety distance q D = p safe c ε (i) g (i) 2, 0 ε (i) 1 D = q i=1 i=1 (p safe c final ) T (i) p safe c final 2 g final Zonotope center Zonotope generator Normal vector Projection on normal vector () i g final c final Large-signal sensitivity S D, w Reachable set Nominal trajectory D w Variation of safety distance 31 January
14 Reliability Optimization with Sensitivity of Safety Distance Based on the calculated sensitivity, optimization is performed Increment of parameter vector in direction of optimization is w k = β k ρ k the gradient of obj. function Suppose gradient is constant in the state-variable space: F w k, t + w k+1 T ρ k = 0 β k+1 = F w k, t ρ k T ρ k Virtually gradient decreases as safety distance becomes smaller. In other words, gradient should be smaller in the next search step. β k+1 = γ F w k,t ρ k T ρ k, 0 < γ <1 Use empirical factor γ to modulate step size. 31 January
15 SRAM Robustness Optimization Flow Set initial state, interval parameters and V th. Set max. number of optimization cycles as max_cycle. k = 0 Run reachability analysis. V th stepping Derive sensitivity of safety distance w.r.t. multiple parameters No Yes Deadlock? Compute increment of parameter vector w. k k k No k = max_cycle? Yes Terminate 31 January
16 Experimental Results WL Implemented in Matlab Platform Core i5 3.2GHz processor 8GB memory Preset parameters simulation Transistor width varies within 100,600 nm Relative standard deviation of V th = 10%. Optimization is performed for the most adverse situations. 31 January BL BL M1 M1 WL vdd 1 M5 0 M2 BR v1 0 v2 1 M3 vdd 1 M5 0 M2 M4 M6 BR v1 1 v2 1 M3 M4 M6 Threshold variations for read operation Threshold variations for write operation
17 Optimization of Read Failure [200, 300, 300]nm [148, 343, 217]nm 31 January
18 Optimization of Write Failure [381, 440, 497]nm [400, 500, 350]nm 31 January
19 Optimization of Read + Write Failure Optimization result: [W 1, W 3, W 5 ] = 192,330,586 nm Transistor widths : [W 1, W 3, W 5 ] = 200,400,400 nm Read pulse width is 9ns. Write pulse width is 0.024ns. 31 January
20 Yield Before and After Optimization Yield rate 1 N failure N total Write failure Yield rate is improved from 6.8% to %. Read failure Verify yield rate before and after optimization by Monte Carlo with 1000 samples. Write operation is optimized at the expense of read operation. 31 January
21 Optimization with Small-signal Sensitivity s = x k w = C h + G 1 G w 1 C h + G ( C h x k 1 + u k ) Small-signal sensitivity The new routine fails to find a feasible solution and results in negative width after 3 iterations. The width M5 fails to be tuned (stays at 400nm). 31 January
22 Runtime Comparison Iteration Transistor widths (nm) Sensitivity based RA (s) MC (s) Speedup 1 [185, 371, 451] x 2 [177, 359, 485] X 3 [173, 349, 515] X 4 [171, 340, 545] x 5 [181, 329, 574] x 6 [192, 330, 586] x 31 January
23 Summary Formulated SRAM dynamic stability verification and optimization problem Proposed large-signal sensitivity of safety distance in the state space by reachability analysis Significantly improved SRAM yield rate in presence of parameter variations 31 January
24 Thank You! Please send comments to
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