MAX4638/MAX Ω, Single 8:1 and Dual 4:1, Low-Voltage Analog Multiplexers

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1 General Description The / are single : and dual : CMOS analog multiplexers/demultiplexers (muxes/ demuxes). Each mux operates from a single +.V to +V supply or dual ±.V supplies. These devices feature.ω on-resistance (R ON ) when powered with a single +V supply and have -7dB off-isolation and -db crosstalk from the output to each off channel. The switching times are t ON and 7 t OFF. They feature a -db MHz bandwidth and a guaranteed. leakage current at + C. A +.V to +.V operating range makes the / ideal for battery-powered, portable itruments. All channels guarantee break-before-make switching. These parts feature bidirectional operation and can handle Rail-to-Rail analog signals. All control inputs are TTL/CMOS-logic compatible. Decoding is in standard BCD format, and an enable input is provided to simplify cascading of devices. These devices are available in small -pin TQFN, TSSOP, and SO packages, as well as a -pin TQFN package. / Applicatio Automatic Test Equipment Low-Voltage Data-Acquisition Systems Audio and Video Signal Routing Medical Equipment Battery-Powered Equipment Relay Replacement Features Guaranteed R ON.Ω (+V or ±.V Supplies) Ω (+V Supply) Guaranteed.Ω R ON Match Between Channels Guaranteed Ω R ON Flatness Over Signal Range Guaranteed Low Leakage Currents. at + C Switching Times: t ON =, t OFF = 7 +.V to +.V Single-Supply Operation ±.V Dual-Supply Operation Rail-to-Rail Signal Handling TTL/CMOS-Logic Compatible Crosstalk: -db (MHz) Off-Isolation: -db (MHz) Ordering Information PART TEMP RANGE PIN-PACKAGE ETE+T - C to + C TQFN-EP* ( ) EUE+T - C to + C TSSOP ESE+T - C to + C SO ETP+T - C to + C TQFN-EP* ( ) +Denotes a lead(pb)-free/rohs-compliant package. T = Tape and reel. *EP = Exposed pad. Ordering Information continued at end of data sheet. Pin Configuratio/Functional Diagrams TOP VIEW + + LOGIC LOGIC NO NOA NOB NO NO NOA NOB NO NO NOA NOB NO 7 NO7 NOA 7 NOB 9 NO A 9 B TSSOP/SO TSSOP/SO Rail-to-Rail is a registered trademark of Nippon Motorola, Ltd. For pricing, delivery, and ordering information, please contact Maxim Direct at --9-, or visit Maxim Integrated s website at 9-7; Rev ; /

2 ABSOLUTE MAXIMUM RATINGS (Voltages Referenced to ) to...+v, A_,...-.V to +V...+.V to -V NO_, _ (Note )... -.V to ( +.V) Continuous Current A_,... ±ma Continuous Current NO_, _... ±ma Peak Current (NO_, _) (pulsed at ms, % duty cycle)... ±ma Continuous Power Dissipation (T A = +7 C) TQFN (derate.9mw/ C above +7 C)...9mW TSSOP (derate 9.mW/ C above +7 C)...7.7mW SO (derate.7mw/ C above +7 C)...9mW Operating Temperature Range MAX_E_ E...- C to + C Junction Temperature...+ C Storage Temperature Range...- C to + C Lead Temperature (soldering, s)...+ C Soldering Temperature (reflow)...+ C Note : Signals on _, NO_ exceeding or are clamped by internal diodes. A_ and are clamped only to and can exceed up to their maximum ratings. Limit forward-diode current to maximum current rating. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditio beyond those indicated in the operational sectio of the specificatio is not implied. Exposure to absolute maximum rating conditio for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS +V Single Supply ( = +V ±%, =, V IH = +.V, V IL = +.V, T A = T MIN to T MAX, unless otherwise noted. Typical values are at T A = + C.) (Notes, ) ANALOG SWITCH PARAMETER SYMBOL CONDITIONS MIN TYP ( N o t e ) Analog Signal Range V _, V NO_ V V + = +.V, I T A = + C.. On-Resistance R C OM_ = m A, ON V N O_ = +.V T A = T MIN to T MAX. Ω On-Resistance Match V + = +.V, I T A = + C.. ΔR C OM_ = m A, ON Between Channels (Notes, ) V N O_ = +.V T A = T MIN to T MAX. Ω V + = +.V ; I T A = + C.7 On-Resistance Flatness (Note ) R C OM_ = m A; FLAT(ON) V N O_ = +V, + V, +.V T A = T MIN to T MAX. Ω NO_ Off-Leakage Current V + = +.V ; V T A = + C -. ±.. I C OM _ = +V, NO_(OFF) +.V ; V N O_ = +.V, + V T A = T MIN to T MAX -.. _ Off-Leakage Current V + = +.V ; V T A = + C -. ±.. I C OM_ = +V, _(OFF) +.V ; V N O_ = +.V, + V T A = T MIN to T MAX V + = +.V ; V C OM_ = +V, T A = + C -. ±.. _ On-Leakage Current I _(ON) +.V ; V N O_ = +V, +.V, or unconnected T A = T MIN to T MAX DIGITAL I/O Input Logic High V IH. V Input Logic Low V IL. V Input Leakage Current I IH, I IL VIN_ = or -... µa Digital Input Capacitance C IN pf DYNAMIC Traition Time t TRANS V N O = + V or, RL = Ω, C L = p F, T A = + C V N O = or + V, Fi g ur e T A = T MIN to T MAX MAX UNITS Maxim Integrated

3 ELECTRICAL CHARACTERISTICS +V Single Supply (continued) ( = +V ±%, =, V IH = +.V, V IL = +.V, T A = T MIN to T MAX, unless otherwise noted. Typical values are at T A = + C.) (Notes, ) PARAMETER SYMBOL CONDITIONS MIN TYP ( N o t e ) R T A = + C Break-Before-Make t L = Ω, C L = pf, BBM V NO_ = +V, Figure T A = T MIN to T MAX Enable Turn-On Time t ON() V NO = +V, V NO to R L = Ω, C L = pf, T A = + C V NO =, Figure T A = T MIN to T MAX Enable Turn-Off Time t OFF() V NO = +V, V NO to R L = Ω, C L = pf, T A = + C 7 V NO =, Figure T A = T MIN to T MAX On-Channel -db Bandwidth Charge Injection BW Q S i g nal = d Bm, C L = p F, Ω i n and out, Fi g ur e V GE N = +.V, R GE N =, C L =.nf, Fig ur e NO_ Off-Capacitance C NO_(OFF) V NO_ = V, f = MHz, Figure T A = + C T A = + C MAX UNITS MHz T A = + C pc T A = + C 9 pf V C OM_ = V, _ Off-Capacitance C C OM_( OFF) f = MHz, T A = + C Figure T A = + C V _ = T A = + C V NO_ = V, Switch On-Capacitance C (ON) f = MHz, T Figure A = + C C L = p F, R L = Ω, f = M H z, V N O_ = T A = + C - V RM S, Fi g ur e Off-Isolation (Note ) V ISO C L = p F, R L = Ω, f = M H z, V N O _ = T A = + C -7 V RM S, Fi g ur e pf pf db / Crosstalk (Note 9) V CT C L = p F, R L = Ω, f = M H z, V N O _= V RM S, Fi g ur e 7 C L = p F, R L = Ω, f = M H z, V N O _ = V R M S, Fi g ur e 7 T A = + C - T A = + C - Total Harmonic Distortion THD R L = Ω, R FLAT(ON) /R L T A = + C. % SUPPLY Positive Supply Current I+ = +.V, V IN = or.. µa db Maxim Integrated

4 ELECTRICAL CHARACTERISTICS +.V Single Supply ( = +.7V to +.V, =, V IH = +.V, V IL = +.V, T A = T MIN to T MAX, unless otherwise noted. Typical values are at = +V and T A = + C.) (Notes, ) PARAMETER SYMBOL CONDITIONS MIN TYP ( N o t e ) ANALOG SWITCH Analog Signal Range V _, V NO_ V I T A = + C. On-Resistance R _ = ma, ON V NO_ = +.7V T A = T MIN to T MAX Ω On-Resistance Match I T A = + C.. ΔR _ = ma, ON Between Channels (Notes, ) V NO_ = +.7V T A = T MIN to T MAX. Ω On-Resistance Flatness (Note ) R FLAT(ON) V N O_ = +.V, +.7V, Ω I C OM _ = m A; T A = + C +.9V T A = T MIN to T MAX. = +.V; NO_ Off-Leakage Current T A = + C -. ±.. I NO_(OFF) V _ = +V, +V; V NO_ = +V, +V T A = T MIN to T MAX -.. = +.V; _ Off-Leakage Current T A = + C -. ±.. I _(OFF) V _ = +V, +V; V NO_ = +V, +V T A = T MIN to T MAX -.. = +.V; V _ = _ On-Leakage Current T A = + C -. ±.. I _(ON) +V, +V; V NO_ = +V, +V, or unconnected T A = T MIN to T MAX -.. DIGITAL I/O Input Logic High V IH. V Input Logic Low V IL. V Input Leakage Current I IH, I IL V IN_ = or -... µa Digital Input Capacitance C IN pf DYNAMIC V T A = + C Traition Time t NO_ = +V, C L = pf, TRANS R L = Ω, Figure T A = T MIN to T MAX V T A = + C Break-Before-Make t NO_ = +V, C L = pf, BBM R L = Ω, Figure T A = T MIN to T MAX V T A = + C Enable Turn-On Time t NO_ = +V, C L = pf, ON() R L = Ω, Figure T A = T MIN to T MAX V T A = + C 9 Enable Turn-Off Time t NO_ = +V, C L = pf, OFF() R L = Ω, Figure T A = T MIN to T MAX MAX UNITS Maxim Integrated

5 ELECTRICAL CHARACTERISTICS +.V Single Supply (continued) ( = +.7V to +.V, =, V IH = +.V, V IL = +.V, T A = T MIN to T MAX, unless otherwise noted. Typical values are at = +V and T A = + C.) (Notes, ) PARAMETER SYMBOL CONDITIONS MIN TYP ( N o t e ) MAX UNITS C L = pf, R L = Ω, f = MHz, V N O_ = + V RM S, Fi g ur e Off-Isolation (Note ) V ISO C L = pf, R L = Ω, f = M Hz, V N O_ = V RM S, Figure T A = + C T A = + C -7 C L = p F, R L = Ω, f = MH z, V N O_ = V RM S, Figure 7 T A = + C - Crosstalk (Note 9) V CT C L = p F, R L = Ω, db f = MH z, V NO_ = V RMS, Fig ur e 7 T A = + C - On-Channel -db Bandwidth BW Signal = dbm, Ω in T A = + C and out, Figure T A = + C MHz V NO_ Off-Capacitance C NO_ = V, f = MHz, NO_(OFF) Figure T A = + C 9 pf _ Off-Capacitance C C OM _( OFF) f = MHz, pf V C OM _ = V, T A = + C Figure T A = + C V = V NO_ T A = + C = V, Switch On-Capacitance C (ON) f = MHz, T Figure A = + C pf SUPPLY Positive Supply Current I+ = +.V, V IN_ = or. µa db ELECTRICAL CHARACTERISTICS ±.V Dual Supplies ( = +. ±%, = -.V ±%, V IH = +.V, V IL = +.V, T A =T MIN to T MAX, unless otherwise noted. Typical values are at V± = ±.V and T A = + C.) (Notes, ) PARAMETER SYMBOL CONDITIONS MIN TYP (Note ) MAX UNITS ANALOG SWITCH Analog Signal Range V _, V NO_ V I T A = + C.. On-Resistance R _ = ma, V NO_ = ±.V, ON = +.V, = -.V T A = T MIN to T MAX. On-Resistance Match I T A = + C.. R _ = ma, V NO_ = ±.V, ON Between Channels (Notes, ) = +.V, = -.V T A = T MIN to T MAX. Maxim Integrated

6 ELECTRICAL CHARACTERISTICS ±.V Dual Supplies (continued) ( = +. ±%, = -.V ±%, V IH = +.V, V IL = +.V, T A = T MIN to T MAX, unless otherwise noted. Typical values are at V± = ±.V and T A = + C.) (Notes, ) PARAMETER SYMBOL CONDITIONS MIN On-Resistance Flatness (Note ) NO_ Off-Leakage Current _ Off-Leakage Current _ On-Leakage Current TYP (Note ) MAX I T A = + C.7 R _ = ma; V NO_ = ±.V, FLAT(ON) ; = +.V; = -.V T A = T MIN to T MAX. = +.7V; = -.7V; T A = + C -. ±.. I NO_ (OFF) V _ = +V, +.V; V NO_ = +.V, +V T A = T MIN to T MAX -.. = +.7V; = -.7; I _ (OFF) V _ = +V, +.V; T A = + C -. ±.. V NO_ = +.V, +V T A = T MIN to T MAX -.. = +.V; = -.; V I _ = +V, +.V; _ (ON) V NO_ = +V, +.V, or unconnected T A = + C -. ±.. T A = T MIN to T MAX -.. DIGITAL I/O Input Logic High V IH. V Input Logic Low V IL. V Input Leakage Current I IH,I IL V IN_ = or -... μa Digital Input Capacitance C IN pf DYNAMIC Traition Time t TRANS V NO_ = +.V, C L = pf, R L =, Figure T A = + C T A = T MIN to T MAX UNITS Enable Turn-On Time t ON() V NO_ = +.V, C L = pf, R L =, Figure T A = + C T A = T MIN to T MAX Enable Turn-Off Time t OFF() V NO_ = +.V, C L = pf, R L =, Figure T A = + C 7 T A = T MIN to T MAX Break-Before-Make t BBM V NO_ = +.V, C L = pf, R L =, Figure T A = + C T A = T MIN to T MAX Note : The algebraic convention, where the most negative value is a minimum and the most positive value a maximum, is used in this data sheet. Note : Parts are tested at + C and guaranteed by design over the entire temperature range. Note : ΔR ON = R ON(MAX) - R ON(MIN). Note : ΔR ON matching specificatio for TQFN packaged parts are guaranteed by design. Note : Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured over the specified analog signal ranges. Note 7: Guaranteed by design. Note : Off-Isolation = log (V _ / V NO_ ), V _ = output, V NO_ = input to off switch. Note 9: Between any two switches. Maxim Integrated

7 ( = +V, = V, T A = + C, unless otherwise noted.) Typical Operating Characteristics RON (Ω) ON-RESISTANCE vs. V = +.V = +V V (V) = +V toc RN (Ω) ON-RESISTANCE vs. V AND TEMPERATURE T A = + C T A = - C V (V) = +V T A = + C toc RON (Ω) ON-RESISTANCE vs. V AND TEMPERATURE T A = + C T A = - C V (V) T A = + C = +V toc SUPPLY CURRT (pa) SUPPLY CURRT vs. SUPPLY VOLTAGE toc CHARGE (pc) CHARGE INJECTION vs. V V± = ±.V = +V toc SUPPLY CURRT ().. SUPPLY CURRT vs. TEMPERATURE toc SUPPLY VOLTAGE (V) V (V) TEMPERATURE ( C) LOGIC VOLTAGE (V) LOGIC LEVEL THRESHOLD vs. SUPPLY VOLTAGE AND TEMPERATURE T A = - C T A = + C T A = + C toc7 TIME () ABLE TURN-ON/TURN-OFF TIME vs. SUPPLY VOLTAGE t OFF t ON toc TIME () ABLE TURN-ON/TURN-OFF TIME vs. TEMPERATURE t ON t OFF toc SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) - - TEMPERATURE ( C) Maxim Integrated 7

8 ( = +V, = V, T A = + C, unless otherwise noted.) Typical Operating Characteristics (continued) RESPONSE (db) FREQUCY RESPONSE ON-RESPONSE ON-RESPONSE OFF-ISOLATION CROSSTALK toc LEAKAGE CURRT (pa). ON/OFF-LEAKAGE CURRT vs. TEMPERATURE ON-LEAKAGE OFF-LEAKAGE toc THD (%).... TOTAL HARMONIC DISTORTION vs. FREQUCY = +.V = -.V Vp-p SIGNAL Ω IN AND OUT toc FREQUCY (MHz). - - TEMPERATURE ( C).. FREQUCY (khz) PIN Pin Description DIP/SO -PIN TQFN-EP -PIN DIP/SO -PIN TQFN-EP -PIN NAME,,,, 9,, 7,, Address Inputs,, 9, 7, Address Inputs Enable FUNCTION Negative-Supply Voltage Input 7 NO N Bidirectional Analog Inputs 7 NOA NOA Bidirectional Analog Inputs 7 Bidirectional Analog outputs, 9, 7 7, 9 A, B Bidirectional Analog outputs 9 7 NO NO Bidirectional Analog Inputs NOB NOB Bidirectional Analog Inputs Positive-Supply Voltage Input Ground, 9,,,,, EP N.C. No Connection. Not internally connected. Exposed Pad (TQFN Only). Connect EP to. Maxim Integrated

9 Detailed Description The / are low-voltage, CMOS analog muxes. The is an : mux that switches one of eight inputs (NO NO) to a common output () as determined by the -bit binary inputs,, and. The is a : dual mux that switches one of four differential inputs to a common differential output as determined by the -bit binary inputs and. Both the / have an input that can be used to enable or disable the device. When disabled, all channels are switched off. See Truth Tables. Applicatio Information Overvoltage Protection Proper power-supply sequencing is recommended for all CMOS devices. Do not exceed the absolute maximum ratings because stresses beyond the listed ratings can cause permanent damage to the devices. Always sequence on first, then, followed by the logic inputs. If power-supply sequencing is not possible, add two small-signal diodes (D, D) in series with the supply pi for overvoltage protection (Figure ). Adding diodes reduces the analog signal range to one diode drop below and one diode drop above, but _ * * +.V -.V D D does not affect the devices low switch resistance. Device operation is unchanged, and the difference between and should not exceed V. These protection diodes are not recommended when using a single supply. For single-supply operation, should be connected to as close to the device as possible. * * NO_ * INTERNAL PROTECTION DIODES Figure. Overvoltage Protection Using External Blocking Diodes (Single -to- Mux) ON SWITCH X X X None NO NO NO NO NO NO NO7 NO Truth Tables (Dual -to- Mux) A B X X None None NOA NOB NOA NOB NOA NOB NOA NOB Maxim Integrated 9

10 Test Circuits/Timing Diagrams Ω V IN V IH NO NO NO7 NO NOB NOA NOA Ω V NO V NO V NO pf ADDRESS INPUT V IN SWITCH OUTPUT +V V t TRANS V N % t R < t F < 9% % Ω V IN V IH NOB B Ω V NO pf V N t TRANS Figure. Traition Time V A V IH Ω NO VNO NO NO7 NO V NO Ω pf ADDRESS INPUT V A SWITCH OUTPUT +V V V N_ V % 9% t BBM t R < t F < Figure. Break-Before-Make Interval Maxim Integrated

11 Test Circuits/Timing Diagrams (continued) V NO V NO NO NO Ω Ω pf LOGIC INPUT V +V V % t R < t F < V NOB V NO SWITCH OUTPUT V NO V 9% 9% NO_, A Ω B Ω pf t ON() t OFF() Figure. Enable Switching Time R S V S CHANNEL SELECT V NO_ C L nf LOGIC INPUT V +V OFF ON OFF ON ON V OFF Δ Δ IS THE MEASURED VOLTAGE DUE TO CHARGE TRANSFER ERROR Q WH THE CHANNEL TURNS OFF. Q = Δ C L Figure. Charge Injection Maxim Integrated

12 Test Circuits/Timing Diagrams (continued) μf μf V IN R S = Ω NO NO R L Ω C L pf R Ω R G = Ω V IN NO NO NO R L Ω C L pf V OFF-ISOLATION = log V IN V μf CROSSTALK = log V IN Figure. Off-Isolation/On-Channel Bandwidth Figure 7. Crosstalk NO CHANNEL SELECT NO MHz CAPACITANCE ANALYZER f = MHz V Figure. Channel Off/On-Capacitance Maxim Integrated

13 Pin Configuratio (continued) TOP VIEW + + NO NOA NOB NO NO NOA NOB NO EP* 9 NO NOA EP* 9 NOB NO NO NO7 NOA A B NOB 7 7 TQFN *CONNECT EP TO TQFN N.C. 9 7 N.C. + + N.C. 9 N.C. 7 N.C. NO NO NO NO NOA NOA NOB NOB NO EP* NO7 NOA EP* NOB NO N.C. N.C. NO NOA 7 9 A N.C. B NOB 7 9 TQFN *CONNECT EP TO TQFN Ordering Information (continued) PART TEMP RANGE PIN-PACKAGE ETE+T - C to + C TQFN-EP* ( ) EUE+T - C to + C TSSOP ESE+T - C to + C SO ETP+T - C to + C TQFN-EP* ( ) +Denotes a lead(pb)-free/rohs-compliant package. T = Tape and reel. *EP = Exposed pad. Chip Information Package Information For the latest package outline information and land patter (footprints), go to Note that a +, #, or - in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing pertai to the package regardless of RoHS status. PACKAGE TYPE PACKAGE CODE OUTLINE NO. LAND PATTERN NO. TQFN T TQFN T TSSOP U SO S PROCESS: BiCMOS Maxim Integrated

14 Z REVISION NUMBER REVISION DATE DESCRIPTION Revision History PAGES CHANGED 9/ / Added RoHS ordering information throughout data sheet Maxim Integrated cannot assume respoibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent licees are implied. Maxim Integrated reserves the right to change the circuitry and specificatio without notice at any time. The parametric values (min and max limits) shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance. Maxim Integrated Rio Robles, San Jose, CA 9 USA --- Maxim Integrated Products, Inc. Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc.