Precision, 8-Channel/Dual 4-Channel, High-Performance, CMOS Analog Multiplexers

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1 9-027; Rev 2; 8/02 Precision, 8-Channel/Dual 4-Channel, General Description The / precision, monolithic, CMOS analog multiplexers (muxes) offer low on-resistance (less than 0Ω), which is matched to within 5Ω between channels and remai flat over the specified analog signal range (7Ω max). They also offer low leakage over temperature (NO-off leakage current less than 5nA at +85 C) and fast switching speeds (traition time less than 250). The is a single-ended -of-8 device, and the is a differential 2-of-4 device. The / are fabricated with Maxim s improved 44V silicon-gate process. Design improvements yield extremely low charge injection (less than pc) and guarantee electrostatic discharge protection greater than 200. These muxes operate with a single +5V to +3 supply or bipolar ±5V to ±2 supplies, while retaining TTL/CMOS-logic input compatibility and fast switching. CMOS inputs provide reduced input loading. These improved parts are plug-in upgrades for the industrystandard DG408, DG409, DG508A, and DG509A. Applicatio Sample-and-Hold Circuits Automatic Test Equipment Heads-Up Displays Guidance and Control Systems Military Radios Communicatio Systems Battery-Operated Systems PBX, PABX Audio Signal Routing Features Guaranteed On-Resistance Match Between Channels, <5Ω Max Low On-Resistance, <0Ω Max Guaranteed Flat On-Resistance over Specified Signal Range, 7Ω Max Guarateed Low Charge Injection, <pc NO-Off Leakage Current <5nA at +85 C -Off Leakage Current <20nA at +85 C ESD Protection >200 Plug-In Upgrade for Industry-Standard DG408/DG409/DG508A/DG509A Single-Supply Operation (+5V to +3) Bipolar-Supply Operation (±5V to ±2) Low Power Coumption, <300µW Rail-to-Rail Signal Handling TTL/CMOS-Logic Compatible Ordering Information PART CPE CSE C/D TEMP RANGE PIN-PACKAGE 6 Plastic DIP 6 Narrow SO Dice* CUE 6 TSSOP EPE -40 C to +85 C 6 Plastic DIP ESE -40 C to +85 C 6 Narrow SO EJE -40 C to +85 C 6 CERDIP EUE -40 C to +85 C 6 TSSOP MJE -55 C to +25 C 6 CERDIP** Ordering Information continued at end of data sheet. *Contact factory for dice specificatio. **Contact factory for availability. Pin Configuratio/Functional Diagrams/Truth Tables / TOP VIEW GND NO NO GND NO5 NO NO2 NO3 NO4 NO5 NO6 NO3 NO4 6 7 NO6 NO7 NO7 NO8 8 9 NO8 CMOS DECODE LOGIC Continued at end of data sheet. DIP/SO/TSSOP 8-CHANNEL SINGLE-DED MULTIPLEXER Maxim Integrated Products For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at , or visit Maxim s website at

2 / ABSOLUTE MAXIMUM RATINGS Voltage Referenced to v, 44V GND V, 25V Digital Inputs, NO, (Note )...( - 2V) to ( + 2V) or 30mA, (whichever occurs first) Continuous Current (any terminal)...30ma Peak Current, NO or (pulsed at ms, % duty cycle max)...0ma Note : Continuous Power Dissipation (T A = +70 C) Plastic DIP (derate.53mw/ C above +70 C)...842mW Narrow SO (derate 8.70mW/ C above +70 C)...696mW CERDIP (derate.00mw/ C above +70 C)...800mW TSSOP (derate 6.7mW/ C above +70 C)...457mW Operating Temperature Ranges MAX30_C... MAX30_E C to +85 C MAX30_MJE C to +25 C Storage Temperature Range C to +50 C Lead Temperature (soldering, sec) C Signals on NO,,,,, or exceeding or are clamped by internal diodes. Limit forward current to maximum current ratings. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditio beyond those indicated in the operational sectio of the specificatio is not implied. Exposure to absolute maximum rating conditio for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Dual Supplies ( =, =, GND =, V AH = +2.4V, V AL = +0.8V,, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX (Note 2) UNITS Analog Signal Range V NO, V -5 5 V On-Resistance R ON I NO = -.0mA, V = ±V Ω On-Resistance Matching Between Channels R ON I NO = -.0mA, V = ±V (Note 4) Ω On-Resistance Flatness R FLAT I NO = -.0mA, V = ±5V or Ω NO-Off Leakage Current (Note 5) I NO(OFF) V = +V, V NO = ±V, V = T A = T MIN to T MAX C, E M na -Off Leakage Current (Note 5) I (OFF) V NO = ±V, V = +V, V = V NO = +V, V = ±V, V = T A = T MIN to T MAX T A = T MIN to T MAX C, E M C, E M na On Leakage Current (Note 5) I (ON) V = ±V, V NO = ±V, sequence each switch on T A = T MIN to T MAX T A = T MIN to T MAX C, E M C, E M na 2

3 ELECTRICAL CHARACTERISTICS Dual Supplies (continued) ( =, =, GND =, V AH = +2.4V, V AL = +0.8V,, unless otherwise noted.) PARAMETER INPUT Input Current with Input Voltage High Input Current with Input Voltage Low SUPPLY Power-Supply Range Positive Supply Current Negative Supply Current DYNAMIC Traistion Time Break-Before-Make Interval Enable Turn-On Time Enable Turn-Off Time Charge Injection SYMBOL I AH I AL I+ I- t TRANS t OP t ON() t OFF() Q V A = 2.4V or 5V V = or 2.4V, V A = V = V A = or 4.5V V = 2.4V, V A(ALL) = or 2.4V V = 2.4V, V A(ALL) = or 2.4V Figure 2 Figure 4 Figure 3 Figure 3 C L =.0nF, V NO =, R S = 0Ω, Figure 5 CONDITIONS MIN TYP MAX (Note 2) ±5 ± UNITS µa µa V µa ma µa pc / Off Isolation (Note 6) V ISO V =, R L = kω, f = 0kHz, Figure 6 V = 2.4V, Crosstalk Between Channels V CT f = 0kHz, V G = V P-P, -92 db R L = kω, Figure 7 Logic Input Capacitance C IN f = MHz 8 pf f = MHz, NO-Off Capacitance C NO(OFF) V = V NO =, 3 pf Figure 8 f = MHz, 26 V -Off Capacitance C = 0.8V (OFF) T V =, A = +25 C 4 Figure 8 pf f = MHz, 37 V -On Capacitance C = 2.4V (ON) T V =, A = +25 C 25 Figure 8 pf -75 db 3

4 / ELECTRICAL CHARACTERISTICS Single Supply ( = +2V, =, GND =, V AH = +2.4V, V AL = +0.8V,, unless otherwise noted.) Analog Signal Range On-Resistance DYNAMIC PARAMETER Traition Time Enable Turn-On Time Enable Turn-Off Time Charge Injection SYMBOL V NO, V R ON t TRANS t ON() t OFF() Q I NO = -.0mA V = 3V or V V NO = 8V, V NO8 =, V IN = 2.4V, Figure 2 V INH = 2.4V, V INL =, V NO = 5V, Figure 3 V INH = 2.4V, V INL =, V NO = 5V, Figure 3 C L =.0nF, V NO =, R S = 0Ω CONDITIONS MIN TYP MAX (Note 2) UNITS V Ω pc Note 2: The algebraic convention where the most negative value is a minimum and the most positive value a maximum is used in this data sheet. Note 3: Guaranteed by design. Note 4: R ON = R ON(MAX) - R ON(MIN). On-resistance match between channels and flatness are guaranteed only with specified voltages. Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured at the extremes of the specified analog signal range. Note 5: Leakage parameters are 0% tested at the maximum rated hot temperature and guaranteed by correlation at +25 C. Note 6: Off isolation = 20log V /V NO, where V = output and V NO = input to off switch. 4

5 Typical Operating Characteristics (, unless otherwise noted.) RON (Ω) ON-RESISTANCE vs. V (DUAL SUPPLIES) V (V) ±5V ±V ±5V ±2 /9 TOC-0 RON (Ω) ON-RESISTANCE vs. V AND TEMPERATURE (DUAL SUPPLIES) = = +25 C +85 C +25 C -55 C V (V) /9 TOC-02 RON (Ω) ON-RESISTANCE vs. V (SINGLE SUPPLY) 5V 5 V V (V) 5V 2 /9 TOC / RON (Ω) ON-RESISTANCE vs. V AND TEMPERATURE (SINGLE SUPPLY) = 5V = +25 C +85 C +25 C -55 C /9 TOC-04 OFF LEAKAGE (na) OFF LEAKAGE vs. TEMPERATURE = 5V = I (ON) I NO (OFF) /9 TOC-05 ON LEAKAGE (na) ON LEAKAGE vs. TEMPERATURE = 5V = I (ON) /9 TOC V (V) TEMPERATURE ( C) TEMPERATURE ( C) Qj (pc) CHARGE INJECTION vs. V V (V) = = = 2V = /9 TOC-07 I+, I- (µa) 0 0. SUPPLY CURRT vs. TEMPERATURE I+ I- 0.0 = = V = V A =, 4.5V TEMPERATURE ( C) MAX4308/9-TOC8 5

6 / Pin Description PIN NAME FUNCTION, 5, 6,, Address Inputs, 6, Address Inputs 2 2 Enable Input 3 3 Negative Supply Voltage Input 4 7 NO NO4 Analog Inputs Bidirectional 4 7 NOA NO4A Analog Inputs Bidirectional 8 Analog Output Bidirectional 8, 9 A, B Analog Outputs Bidirectional 9 2 NO8 NO5 Analog Inputs Bidirectional 3 NO4B NOB Analog Inputs Bidirectional 3 4 Positive Supply Voltage Input 4 5 GND Ground Applicatio Information Operation with Supply Voltages Other than 5V Using supply voltages less than ±5V will reduce the analog signal range. The / switches operate with ±5V to ±2 bipolar supplies or with a +5V to +3 single supply. Connect to GND when operating with a single supply. Both device types can also operate with unbalanced supplies, such as +24V and -5V. The Typical Operating Characteristics graphs show typical on-resistance with 2, 5V, V, and 5V supplies. (Switching times increase by a factor of two or more for operation at 5V.) Overvoltage Protection Proper power-supply sequencing is recommended for all CMOS devices. Do not exceed the absolute maximum ratings, because stresses beyond the listed ratings may cause permanent damage to the devices. Always sequence on first, then, followed by the logic inputs, NO, or. If power-supply sequencing is not possible, add two small signal diodes in series with supply pi for overvoltage protection (Figure ). Adding diodes reduces the analog signal range to V below and V above, but does not affect the devices low switch resistance and low leakage characteristics. Device operation is unchanged, and the difference between and should not exceed +44V. V g NO Figure. Overvoltage Protection Using External Blocking Diodes 6

7 Test Circuits/Timing Diagrams 50Ω 50Ω GND NO NO2-NO7 NO8 NO4B B GND NOB NOA-NO4A 300Ω 300Ω ±V +V ±V +V 35pF 35pF LOGIC INPUT OUTPUT +3V V NO V NO8 t TRANS ON 50% 90% tr < 20 t f < 20 90% t TRANS / Figure 2. Traition Time 50Ω GND NO NO2-NO8 k -5V 35pF LOGIC INPUT +3V 50% tr < 20 t f < 20 NOB NOA-NO4A NO2B-NO4B, A -5V OUTPUT t ON() 90% % t OFF() 50Ω B GND k 35pF Figure 3. Enable Switching Time 7

8 / Test Circuits/Timing Diagrams (continued) +2.4V 50Ω GND NO-NO8 300Ω +5V 35pF LOGIC INPUT OUTPUT +3V 50% 80% t OP tr < 20 t f < 20 Figure 4. Break-Before-Make Interval R S V S CHANNEL SELECT NO GND C L = 00nF LOGIC INPUT +3V OFF ON OFF IS THE MEASURED VOLTAGE DUE TO CHARGE TRANSFER ERROR Q WH THE CHANNEL TURNS OFF. Q = C L = Figure 5. Charge Injection 8

9 Test Circuits/Timing Diagrams (continued) nf nf V V IN IN NO NO NO2 R S = 50Ω NO8 NO8 R S = 50Ω R L = kω R L = kω GND GND / nf nf OFF ISOLATION = 20log V IN CROSSTALK = 20log V IN Figure 6. Off Isolation Figure 7. Crosstalk CHANNEL SELECT GND NO NO8 Meter Impedance Analyzer or Equivalent f = MHz Figure 8. NO/ Capacitance 9

10 / Pin Configuratio/Functional Diagrams/Truth Tables (continued) TOP VIEW GND NOA GND NO2A NO3A NO4A A NOA 4 3 NOB NOB NO2A NO3A NO4A A NO2B NO3B N04B B NO2B B NO3B NO4B DIP/SO/TSSOP CMOS DECODE LOGIC 4-CHANNEL DIFFERTIAL MULTIPLEXER X X X ON None X X ON None LOGIC 0 V AL 0.8V, LOGIC V AH 2.4V LOGIC 0 V AL 0.8V, LOGIC V AH 2.4V

11 _Ordering Information (continued) PART CPE CSE CUE C/D EPE ESE EJE EUE MJE TEMP RANGE -40 C to +85 C -40 C to +85 C -40 C to +85 C -40 C to +85 C -55 C to +25 C *Contact factory for dice specificatio. **Contact factory for availability. PIN-PACKAGE 6 Plastic DIP 6 Narrow SO 6 TSSOP Dice* 6 Plastic DIP 6 Narrow SO 6 CERDIP 6 TSSOP 6 CERDIP** Package Information For the latest package outline information, go to /

12 / Chip Topographies GND N.C. GND N.C. N.C. NO NO5 NOA NOB NO2 NO3 NO (3.45mm) N.C. NO2A NO3A NO2B 0.36 (3.45mm) NO3B NO4 NO8 NO7 NO4A A B NO4B 0.080" (2.03mm) 0.080" (2.03mm) N.C. = NO INTERNAL CONNECTION TRANSISTOR COUNT: 22 SUBSTRATE CONNECTED TO TRANSISTOR COUNT: 22 SUBSTRATE CONNECTED TO Maxim cannot assume respoibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licees are implied. Maxim reserves the right to change the circuitry and specificatio without notice at any time. 2 Maxim Integrated Products, 20 San Gabriel Drive, Sunnyvale, CA (408) Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products.

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