Low Voltage 400 MHz Quad 2:1 Mux with 3 ns Switching Time ADG774A
|
|
- Avis Miller
- 6 years ago
- Views:
Transcription
1 a FEATURE Bandwidth >4 MHz Low Insertion Loss and On Resistance: 2.2 Typical On-Resistance Flatness.3 Typical ingle 3 V/5 upply Operation Very Low istortion: <.3% Low Quiescent upply Current (1 na Typical) Fast witching Times t ON 6 ns t OFF 3 ns TTL/CMO Compatible Low Voltage 4 MHz Quad 2:1 Mux with 3 ns witching Time FUNCTIONAL BLOCK IAGRAM 1B 2A 2 2B 3A 3 3B 4A 4 4B 1 OF 2 ECOER GERAL ECRIPTION The is a monolithic CMO device comprising four 2:1 multiplexer/demultiplexers with high impedance outputs. The CMO process provides low power dissipation yet gives high switching speed and low on resistance. The on-resistance variation is typically less than.5 W over the input signal range. The bandwidth of the is typically 4 MHz and this, coupled with low distortion (typically.3%), makes the part suitable for switching of high-speed data signals. The on-resistance profile is very flat over the full analog input range ensuring excellent linearity and low distortion. CMO construction ensures ultralow power dissipation. The operates from a single 3.3 V/5 V supply and is TTL logic compatible. The control logic for each switch is shown in the Truth Table. These switches conduct equally well in both directions when ON. In the OFF condition, signal levels up to the supplies are blocked. The switches exhibit break-before-make switching action. PROUCT HIGHLIGHT 1. Wide bandwidth data rates >4 MHz. 2. Ultralow Power issipation. 3. Low leakage over temperature. 4. Break-Before-Make witching. This prevents channel shorting when the switches are configured as a multiplexer. 5. Crosstalk is typically 7 1 MHz. 6. Off isolation is typically 65 1 MHz. REV. A Information furnished by Analog evices is believed to be accurate and reliable. However, no responsibility is assumed by Analog evices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog evices. Trademarks and registered trademarks are the property of their respective companies. One Technology Way, P.O. Box 916, Norwood, MA , U..A. Tel: 781/ Fax: 781/ Analog evices, Inc. All rights reserved.
2 PECIFICATION GLE UPPLY 1 ( = 5 V 1%, = V. All specifications T M to T MAX unless otherwise noted.) B Version T M to Parameter 25 C T MAX Unit Test Conditions/Comments ANALOG WITCH Analog ignal Range to 2.5 V On Resistance (R ON ) 2.2 W typ V = V to 1 V; I = 1 ma W max On Resistance Match Between Channels (R ON ).15 W typ V = V to 1 V; I = 1 ma.5 W max On Resistance Flatness (R FLAT(ON) ).3 W typ V = V to 1 V; I = 1 ma.6 W max LEAKAGE CURRT ource OFF Leakage ±.1 na typ V = 3 V, = 1 V; V = 1 V, = 3 V; ±.1 ±.25 na max Test Circuit 2 rain OFF Leakage ±.1 na typ V = 3 V, = 1 V; V = 1 V, = 3 V; ±.1 ±.25 na max Test Circuit 2 Channel ON Leakage I, I (ON) ±.1 na typ V = = 3 V; V = = 1 V; Test Circuit 3 ±.1 ±.25 na max IGITAL PUT Input High Voltage, V H 2.4 V min Input Low Voltage, V L.8 V max Input Current I L or I H.1 ma typ V = V L or V H ±.1 ma max C, igital Input Capacitance 3 pf typ YNAMIC CHARACTERITIC 2 t ON, t ON () 6 ns typ = 35 pf, R L = 5 W; 12 ns max = 2 V; Test Circuit 4 t OFF, t OFF () 3 ns typ = 35 pf, R L = 5 W; 6 ns max = 2 V; Test Circuit 4 Break-Before-Make Time elay, t 3 ns typ = 35 pf, R L = 5 W; 1 ns min 1 = 2 = 2 V; Test Circuit 5 Off Isolation 65 db typ f = 1 MHz; R L = 5 W; Test Circuit 7 Channel-to-Channel Crosstalk 7 db typ f = 1 MHz; R L = 5 W; Test Circuit 8 Bandwidth 3 db 4 MHz typ Test Circuit 6, R L = 5 W; istortion.3 % typ R L = 1 W Charge Injection 6 pc typ = 1 nf; Test Circuit 9, = V C (OFF) 5 pf typ C (OFF) 7.5 pf typ C, C (ON) 12 pf typ POWER REQUIREMT I 1 ma max.1 ma typ = 5.5 V igital Inputs = V or NOTE 1 Temperature ranges are as follows: B Version, 4 C to +85 C. 2 Guaranteed by design, not subject to production test. pecifications subject to change without notice. 2 REV. A
3 GLE UPPLY 1 ( = 3 V 1%, = V. All specifications T M to T MAX unless otherwise noted.) B Version T M to Parameter 25 C T MAX Unit Test Conditions/Comments ANALOG WITCH Analog ignal Range to 1.5 V On Resistance (R ON ) 4 W typ V = V to 1 V; I = 1 ma 6 7 W max On Resistance Match Between Channels (R ON ).15 W typ V = V to 1 V; I = 1 ma.5 W max On Resistance Flatness (R FLAT(ON) ) 1.5 W typ V = V to 1 V; I = 1 ma 3 W max LEAKAGE CURRT ource OFF Leakage ±.1 na typ V = 2 V, = 1 V; V = 1 V, = 2 V; ±.1 ±.25 na max Test Circuit 2 rain OFF Leakage ±.1 na typ V = 2 V, = 1 V; V = 1 V, = 2 V; ±.1 ±.25 na max Test Circuit 2 Channel ON Leakage I, I (ON) ±.1 na typ V = = 2 V; V = = 1 V; Test Circuit 3 ±.1 ±.25 na max IGITAL PUT Input High Voltage, V H 2. V min Input Low Voltage, V L.4 V max Input Current I L or I H.1 ma typ V = V L or V H ±.1 ma max C, igital Input Capacitance 3 pf typ YNAMIC CHARACTERITIC 2 t ON, t ON () 7 ns typ = 35 pf, R L = 5 W; 14 ns max = 1.5 V; Test Circuit 4 t OFF, t OFF () 4 ns typ = 35 pf, R L = 5 W; 8 ns max = 1.5 V; Test Circuit 4 Break-Before-Make Time elay, t 3 ns typ = 35 pf, R L = 5 W; 1 ns min 1 = 2 = 1.5 V; Test Circuit 5 Off Isolation 65 db typ f = 1 MHz; R L = 5 W, Test Circuit 7 Channel-to-Channel Crosstalk 7 db typ f = 1 MHz; R L = 5 W, Test Circuit 8 Bandwidth 3 db 4 MHz typ Test Circuit 6; R L = 5 W istortion 1.5 % typ R L = 1 W Charge Injection 4 pc typ = 1 nf; Test Circuit 9, = V C (OFF) 5 pf typ C (OFF) 7.5 pf typ C, C (ON) 12 pf typ POWER REQUIREMT I 1 ma max.1 ma typ = 3.3 V igital Inputs = V or NOTE 1 Temperature ranges are as follows: B Version, 4 C to +85 C. 2 Guaranteed by design, not subject to production test. pecifications subject to change without notice. Table I. Truth Table Function 1 X Hi-Z Hi-Z Hi-Z Hi-Z IABLE 2A 3A 4A = 1 1B 2B 3B 4B = 1 REV. A 3
4 ABOLUTE MAXIMUM RATG 1 (T A = 25 C unless otherwise noted) to V to +6 V Analog, igital Inputs V to +.3 V or ma, Whichever Occurs First Continuous Current, or ma Peak Current, or ma (Pulsed at 1 ms, 1% uty Cycle max) Operating Temperature Range Industrial (B Version) C to +85 C torage Temperature Range C to +15 C Junction Temperature C QOP Package, Power issipation mw q JA Thermal Impedance C/W Lead Temperature, oldering Vapor Phase (6 sec) C Infrared (15 sec) C NOTE 1 tresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at, or will be clamped by internal diodes. Current should be limited to the maximum ratings given. P CONFIGURATION (QOP) 1 2 1B 3 4 2A 5 2B TOP VIEW (Not to cale) A 4B 4 3A 3B 3 TERMOLOGY Most Positive Power upply Potential. Ground ( V) Reference. ource Terminal. May be an input or output. rain Terminal. May be an input or output. Logic Control Input. Logic Control Input. R ON Ohmic resistance between and. R ON On Resistance match between any two channels i.e., R ON max R ON min. R FLAT(ON) Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. ource Leakage Current with the switch OFF. rain Leakage Current with the switch OFF. I, I (ON) Channel Leakage Current with the switch ON. V ( ) Analog Voltage on Terminals,. C (OFF) OFF witch ource Capacitance. C (OFF) OFF witch rain Capacitance. C, C (ON) ON witch Capacitance. t ON elay between applying the digital control input and the output switching on. ee Test Circuit 4. t OFF elay between applying the digital control input and the output switching Off. t OFF time or ON time measured between the 9% points of both switches, when switching from one address state to another. ee Test Circuit 5. Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. Off Isolation A measure of unwanted signal coupling through an OFF switch. Bandwidth Frequency response of the switch in the ON state measured at 3 db down. istortion R FLAT(ON) /R L ORERG GUIE Model Temperature Range Package escriptions Package Options BRQ 4 C to +85 C RQ =.15" hrink mall Outline Package (QOP) RQ-16 CAUTION E (electrostatic discharge) sensitive device. Electrostatic charges as high as 4 V readily accumulate on the human body and test equipment and can discharge without detection. Although the features proprietary E protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper E precautions are recommended to avoid performance degradation or loss of functionality. WARNG! E ITIVE EVICE 4 REV. A
5 Typical Performance Characteristics 2 T A = 25 C 2 T A = 25 C 2 = 5V R ON = 5.V = 4.5V R ON = 3.V = 2.7V R ON C +85 C = 5.5V = 3.3V 4 C OR V OR RA OURCE VOLTAGE V TPC 1. On Resistance as a Function of V ( ) for Various ingle upplies OR V OR RA OURCE VOLTAGE V TPC 2. On Resistance as a Function of V ( ) for Various ingle upplies OR V OR RA OURCE VOLTAGE V TPC 3. On Resistance as a Function of V ( ) for ifferent Temperatures with 5 ingle upplies R ON = 3V +25 C +85 C CURRT na = 5.V = V TEMP = 25 C I, I (ON) CURRT na = 3.V = V TEMP = 25 C I, I (ON) 4 C OR V OR RA OURCE VOLTAGE V TPC 4. On Resistance as a Function of V ( ) for ifferent Temperatures with 3 ingle upplies V(V = ) TPC 5. Leakage Current as a Function of V ( ) V(V = ) TPC 6. Leakage Current as a Function of V ( ) CURRT na = 5.V = V TEMP = 25 C V = 3V/1V = 1V/3V I, I (ON) TEMPERATURE C TPC 7. Leakage Current as a Function of Temperature CURRT na = 3.V = V TEMP = 25 C V = 2V/1V = 1V/2V I, I (ON) TEMPERATURE C TPC 8. Leakage Current as a Function of Temperature ATTUATION db FREQUCY MHz TPC 9. Off Isolation vs. Frequency REV. A 5
6 2 1 ATTUATION db 4 6 ON REPONE db 5 1 Q J pc = 3V = 5V FREQUCY MHz FREQUCY MHz VOLTAGE V TPC 1. Crosstalk vs. Frequency TPC 11. Bandwidth TPC 12. Charge Injection vs. ource Voltage 1 BAE TX+ 1 BAE TX TX1 1 BAE TX+ 1 BAE TX TX2 RJ45 1 BAE TX+ 1 BAE TX 1 BAE TX+ 1 BAE TX RX1 RX2 TRANFORMER 1 BAE TX 1 BAE TX Figure 1. Full uplex Transceiver TX1 RX Figure 2. Loop Back Figure 3. Line Termination Figure 4. Line Clamp 6 REV. A
7 Test Circuits I V1 A A NC I (ON) A V V R ON = V1/I NC = NO CONNECT Test Circuit 1. On Resistance Test Circuit 2. Off Leakage Test Circuit 3. On Leakage 5V.1 F V 3V 5% 5% 9% 9% R L 1 35pF t ON t OFF Test Circuit 4. witching Times.1 F.1 F 5V NETWORK ANALYZER 3V V V 5% 5% OUT 1B V V R L V 5% 5% OUT 1 35pF ECOER t t V 5 5 Test Circuit 5. Break-Before-Make Time elay Test Circuit 6. Bandwidth.1 F.1 F NETWORK ANALYZER NETWORK ANALYZER A R L 5 V 5 V 2 5 Test Circuit 7. Off Isolation Test Circuit 8. Channel-to-Channel Crosstalk REV. A 7
8 5V R 1B 2A 2B 3A 3B 4A 4B 1 OF 2 ECOER 1nF 1nF 1nF 1nF V 3V Q J = C2373 4/3(A) Test Circuit 9. Charge Injection OUTLE IMION 16-Lead hrink mall Outline Package [QOP] (RQ-16) imensions shown in inches.193 BC BC.236 BC P COPLANARITY.4.25 BC.12.8 EATG PLANE COMPLIANT TO JEEC TANAR MO-137AB.5.16 Revision History Location Page 4/3 ata heet changed from REV. to REV. A. Changes to TPCs Updated OUTLE IMION REV. A
1 pc Charge Injection, 100 pa Leakage, CMOS 5 V/+5 V/+3 V Quad SPST Switches ADG611/ADG612/ADG613
a FEATURE 1 pc Charge Injection 2.7 V to 5.5 V ual upply +2.7 V to +5.5 V ingle upply Automotive Temperature Range 4 C to +125 C 1 pa Max @ 25 C Leakage Currents 85 On-Resistance Rail-to-Rail witching
More informationonlinecomponents.com
a FEATURES +.8 V to +. ingle Supply 2. V ual Supply 2. ON Resistance. ON Resistance Flatness pa Leakage Currents 4 ns Switching Times Single 6-to- Multiplexer AG76 ifferential 8-to- Multiplexer AG77 28-Lead
More informationCMOS, +1.8 V to +5.5 V/ 2.5 V, 2.5 Low-Voltage, 8-/16-Channel Multiplexers ADG706/ADG707 REV. A
a FEATURES +.8 V to +. ingle Supply. V ual Supply. ON Resistance. ON Resistance Flatness pa Leakage Currents ns Switching Times Single -to- Multiplexer AG ifferential 8-to- Multiplexer AG 8-Lead TSSOP
More informationCMOS ±5 V/+5 V/+3 V Triple SPDT Switch ADG633
CMOS ±5 V/+5 V/+3 V Triple SPT Switch AG633 FEATURES ±2 V to ±6 V ual Supply 2 V to 12 ingle Supply Automotive Temperature Range 4 o C to +125 o C
More information1 pc Charge Injection, 100 pa Leakage CMOS 5 V/5 V/3 V 4-Channel Multiplexer ADG604
a FEATURES 1 pc Charge Injection (Over the Full Signal Range) 2.7 V to 5.5 V ual Supply 2.7 V to 5.5 ingle Supply Automotive Temperature Range: 4 C to +125 C 1 pa Max @ 25 C Leakage Currents 85 Typ On
More informationLC2 MOS 4-/8-Channel High Performance Analog Multiplexers ADG408/ADG409
a FEATURES 44 upply Maximum Ratings to Analog Signal Range Low On Resistance ( max) Low Power (I SUPPLY < 75 A) Fast Switching Break-Before-Make Switching Action Plug-in Replacement for G408/G409 APPLICATIONS
More informationAG726/AG732 SPECIFICATIONS ( = V %, = V, GN = V, unless otherwise noted.) B Version 4 C Parameter +2 C to +8 C Unit Test Conditions/Comments ANALOG SW
a FEATURES.8 V to. ingle Supply 2. V ual-supply Operation 4 On Resistance. On Resistance Flatness 48-Lead TQFP or 48-Lead 7 mm 7 mm CSP Packages Rail-to-Rail Operation 3 ns Switching Times Single 32-to-
More informationLow Capacitance, Low Charge Injection, ±15 V/+12 V icmos Quad SPST Switches ADG1212-EP
Enhanced Product Low Capacitance, Low Charge Injection, ±15 V/+12 V icmo Quad PT witches FEATURE 1 pf off capacitance 2.6 pf on capacitance
More informationLC 2 MOS Precision Analog Switch in MSOP ADG419-EP
LC 2 MOS Precision Analog Switch in MSOP AG49-EP FEATURES 44 V supply maximum ratings VSS to V analog signal range Low on resistance:
More informationLow Voltage 2-1 Mux, Level Translator ADG3232
Low Voltage 2-1 Mux, Level Translator ADG3232 FEATURES Operates from 1.65 V to 3.6 V Supply Rails Unidirectional Signal Path, Bidirectional Level Translation Tiny 8-Lead SOT-23 Package Short Circuit Protection
More informationHigh Voltage, Latch-Up Proof, 4-Channel Multiplexer ADG5204
High Voltage, Latch-Up Proof, 4-Channel Multiplexer AG524 FEATURES Latch-up proof 3 pf off source capacitance 26 pf off drain capacitance.6 pc charge injection Low leakage:.4 na maximum at 85 C ±9 V to
More informationPrecision, 16-Channel/Dual 8-Channel, Low-Voltage, CMOS Analog Multiplexers
/ Precision, 6-Channel/Dual 8-Channel, General Description The / low-voltage, CMOS analog multiplexers (muxes) offer low on-resistance (Ω max), which is matched to within 6Ω between switches and remains
More informationQuad SPST CMOS Analog Switch
Quad PT CMO Analog witch HI-201/883 The HI-201/883 is a monolithic device comprised of four independently selectable PT switchers which feature fast switching speeds (185ns typical) combined with low power
More informationDG411CY. Pin Configurations/Functional Diagrams/Truth Tables IN2 DG412 IN3 DIP/SO/TSSOP DG412 LOGIC SWITCH OFF SWITCHES SHOWN FOR LOGIC 0 INPUT
9-728; Rev ; 9/0 Improved, Quad, General escription Maxim s redesigned analog switches now feature low on-resistance matching between switches (Ω max) and guaranteed on-resistance flatness over the signal
More informationImproved, Dual, High-Speed Analog Switches
-477; Rev ; 6/ Improved, ual, High-peed Analog witches General escription Maxim's redesigned G4// analog switches now feature guaranteed low on-resistance matching between switches (Ω max) and guaranteed
More information2Ω, Quad, SPST, CMOS Analog Switches
9-73; Rev ; 4/ 2Ω, Quad, SPST, CMOS Analog Switches General Description The // quad analog switches feature.6ω max on-resistance (R ) when operating from a dual ±5V supply. R is matched between channels
More informationMAX14753 V DD INA0 INA1 INA2 INA3 OUT INB0 INB1 INB2 INB3
19-4255; Rev 3; 7/10 8-Channel/Dual 4-Channel General Description The are 8-to-1 and dual 4-to-1 high-voltage analog multiplexers. Both devices feature 60Ω (typ) on-resistance with 0.03Ω (typ) on-resistance
More informationLOW HIGH OFF ON. Maxim Integrated Products 1
9-79; Rev ; /07 Low-Voltage, Quad, SPST General Description The MAX0/MAX/MAX are quad, low-voltage, single-pole/single-throw (SPST) analog switches. On-resistance (00Ω, max) is matched between switches
More informationLow-Leakage, CMOS Analog Multiplexers
/ General Description The / are monolithic, CMOS analog multiplexers (muxes). The 8-channel is designed to connect one of eight inputs to a common output by control of a 3-bit binary address. The dual,
More informationImproved, SPST/SPDT Analog Switches
9-0; Rev 2; 2/96 Improved, PT/PT nalog witches General escription Maxim s redesigned G7/G/G9 precision, CMO, monolithic analog switches now feature guaranteed on-resistance matching (3Ω max) between switches
More informationDG2707. High Speed, Low Voltage, 3, Differential 4:1 CMOS Analog Multiplexer/Switch. Vishay Siliconix FEATURES DESCRIPTION APPLICATIONS
G2707 High Speed, Low Voltage, 3, ifferential 4:1 CMOS Analog Multiplexer/Switch ESCRIPTION The G2707 is a high speed, low voltage, 3, differential 4:1 multiplexer. It operates from a 1.65 V to 4.3 V single
More informationLow-Voltage Single SPDT Analog Switch
Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power,
More informationLow-Voltage, 8-Channel/Dual 4-Channel Multiplexers with Latchable Inputs
9-396; Rev. ; 5/95 Low-Voltage, 8-Channel/Dual 4-Channel General Description The are low-voltage, CMOS, -of-8 and dual 4-channel muxes with latchable digital inputs. They feature low-voltage operation
More informationPrecision, 8-Channel/Dual 4-Channel, High-Performance, CMOS Analog Multiplexers
9-027; Rev 2; 8/02 Precision, 8-Channel/Dual 4-Channel, General Description The / precision, monolithic, CMOS analog multiplexers (muxes) offer low on-resistance (less than 0Ω), which is matched to within
More informationMAX4638/MAX Ω, Single 8:1 and Dual 4:1, Low-Voltage Analog Multiplexers
General Description The / are single : and dual : CMOS analog multiplexers/demultiplexers (muxes/ demuxes). Each mux operates from a single +.V to +V supply or dual ±.V supplies. These devices feature.ω
More informationSGM7227 High Speed USB 2.0 (480Mbps) DPDT Analog Switch
GENERAL DECRIPTION The GM7227 is a high-speed, low-power double-pole/ double-throw (DPDT) analog switch that operates from a single 1.8V to 4.3V power supply. GM7227 is designed for the switching of high-speed
More informationHigh Speed Quad SPST CMOS Analog Switch
High Speed Quad SPST CMOS Analog Switch HI-21HS/883 The HI-21HS/883 is a monolithic CMOS analog switch featuring very fast switching speeds and low ON resistance. This integrated circuit consists of four
More information8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers
8-Ch/ual 4-Ch High-Performance CMOS Analog Multiplexers Low On-Resistance r S(on) : Low Charge Injection Q: pc Fast Transition Time t TRANS : 6 ns Low Power I SUPPLY : A Single Supply Capability 44-V Supply
More informationIRFD A, 100V, Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet July File Number 2315.
IRF1 ata heet July 1999 File Number 31.3 1.3A, 1V,.3 Ohm, N-Channel Power MOFET This advanced power MOFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche
More informationCOM COM GND MAX4644 OFF OFF
9-7; Rev ; / High-Speed, Low-Voltage, 4, General Description The is a single-pole/double-throw (SPDT) switch that operates from a single supply ranging from +.V to +.V. It provides low 4 on-resistance
More informationPowered-off Protection, 1, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)
DGE Powered-off Protection,,.8 V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The DGE is a high performance single-pole, double-throw (SPDT) analog switch designed for.8 V to 5.5 V operation
More informationLow-Voltage Single SPDT Analog Switch
Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power,
More informationQuad SPST CMOS Analog Switches
Quad PT MO Analog witches ERIPTION The G441/442 monolithic quad analog switches are designed to provide high speed, low error switching of analog and audio signals. The G441 has a normally closed function.
More informationDG417/418/419. Precision CMOS Analog Switches. Features Benefits Applications. Description. Functional Block Diagram and Pin Configuration
G417/418/419 Precision MO Analog witches Features Benefits Applications 1-V Analog ignal Range On-Resistance r (on) : 2 Fast witching Action t ON : 1 ns Ultra Low Power Requirements P :3 nw TTL and MO
More informationFeatures. Functional Diagrams, Pin Configurations, and Truth Tables
Features Low On-Resistance (Ω typ) Minimizes Distortion and Error Voltages Low Glitching Reduces Step Errors in Sample-and-Holds. Charge Injection, pc typ Single-Supply Operation (+.V to +1V) Improved
More informationSGM48753 CMOS Analog Switch
GENERAL DESCRIPTION The is a CMOS analog IC configured as three single-pole/double-throw (SPDT) switches. This CMOS device can operate from 2.5V to 5.5V single supplies. Each switch can handle rail-to-rail
More informationI2 C Compatible Digital Potentiometers AD5241/AD5242
a Preliminary Technical ata FEATURES Position Potentiometer Replacement 0K, 00K, M, Ohm Internal Power ON Mid-Scale Preset +. to +.V Single-Supply; ±.V ual-supply Operation I C Compatible Interface APPLICATIONS
More informationPowered-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)
Powered-off Protection,, 1. V to 5.5 V, SPDT Analog Switch (:1 Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for 1. V to 5.5 V operation with
More informationIN1 IN2 DG412 GND IN3 IN4 DIP/SO/TSSOP DG412 LOGIC SWITCH OFF SWITCHES SHOWN FOR LOGIC 0 INPUT
9-4728; Rev 7; 9/08 Improved, Quad, General escription Maxim s redesigned analog switches now feature low on-resistance matching between switches (3Ω max) and guaranteed on-resistance flatness over the
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET TM443 PROUCT UMMARY V (V) - 3 R (on) ( ) at V G = - V.6 R (on) ( ) at V G = - 4. V.22 I (A) - 8 Configuration ingle O-8 FEATURE Halogen-free According to IEC 6249-2-2 efinition
More informationN-Channel 30-V (D-S) MOSFET
N-Channel -V (-) MOFET TM PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).9 at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation
More informationDG211. Features. SPST 4-Channel Analog Switch. Part Number Information. Functional Block Diagrams. Pinout. Data Sheet December 21, 2005 FN3118.
Data Sheet FN3118.4 SPST 4-Channel Analog Switch The is a low cost, CMOS monolithic, Quad SPST analog switch. It can be used in general purpose switching applications for communications, instrumentation,
More informationQuad SPST CMOS Analog Switches
Quad PT MO Analog witches Low On-Resistance: Low Leakage: 8 pa Low Power onsumption:.2 mw Fast witching Action t ON : 1 ns Low harge Injection Q: 1 p G21A/G22 Upgrades TTL/MO-ompatible Logic ingle upply
More informationMonolithic CMOS Analog Multiplexers
19-008; Rev 3; 9/01 Monolithic CMOS Analog Multiplexers General escription Maxim s and are monolithic CMOS analog multiplexers (muxes): the is a single 8-channel (1-of-8) mux, and the is a differential
More informationP-Channel 60-V (D-S) MOSFET
New Product P-Channel -V (-) MOFET i97by PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = - V -.7-8 nc. at V G = -. V -. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET
More informationP-Channel 30-V (D-S) MOSFET
New Product P-Channel 3-V (-) MOFET i825y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).25 at V G = - V -.9-3 29.5 nc.25 at V G = -.5 V -. FEATURE Halogen-free TrenchFET Power MOFET % R g Tested %
More informationP-Channel 150-V (D-S) MOSFET
i55y P-Channel 5-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) Q g (Typ.) - 5 G.295 at V G = - V - 8.9 c 23.2 nc.35 at V G = - 6 V - 8.6 c 2 3 O-8 8 7 6 5 FEATURE TrenchFET Power MOFET % R g and UI
More informationPrecision CMOS Analog Switches
Precision MO Analog witches G417, G418, G419 ERIPTION The G417, G418, G419 monolithic MO analog switches were designed to provide high performance switching of analog signals. ombining low power, low leakages,
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).3 at V G = - V - 9. - 3 3 nc.9 at V G = -. V -.8 FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R
More informationN-Channel 30-V (D-S) MOSFET
i462y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.) 3.79 at V G = V 9.3 a 8.8 nc. at V G = 4. V 7. a FEATURE Halogen-free TrenchFET Power MOFET % R g Tested % UI Tested RoH COMPLIANT
More informationP-Channel 2.5 V (G-S) MOSFET
i3cy P-Channel 2.5 V (G-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).8 at V G = - V - 8. - 2. at V G = -.5 V -. 5 nc. at V G = - 2.5 V - FEATURE Halogen-free According to IEC 29-2-2 efinition
More informationNC7SB3157 TinyLogic Low Voltage UHS Analog Switch 2-Channel Multiplexer/Demultiplexer (Preliminary)
September 1999 Revised November 1999 TinyLogic Low Voltage UHS Analog Switch 2-Channel Multiplexer/Demultiplexer (Preliminary) General Description The is a high performance, Analog Switch 2- channel CMOS
More informationLow-Power, High-Speed CMOS Analog Switches
New Product G1B/3B/5B Low-Power, High-peed MO Analog witches FEATURE BENEFIT APPLIATION 44-V upply Max Rating 15-V Analog ignal Range On-Resistance r (on) : 23 Low Leakage I (on) : pa Fast witching t ON
More informationN-Channel 20-V (D-S) Fast Switching MOSFET
N-Channel -V (-) Fast witching MOFET i7n PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.) 8 7.53 at V G = V..78 at V G = 4.5 V 7.4 PowerPAK -8 6 5 3.3 mm 3.3 mm Bottom View 3 G 4 4 nc Ordering Information:
More informationN-Channel 30-V (D-S) MOSFET
i7y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation
More informationPin Configurations/Functional Diagrams/Truth Tables IN V+ GND SOT23-6* MAX4544 ON OFF OFF ON SWITCHES SHOWN FOR "0" INPUT. Maxim Integrated Products 1
9-; Rev ; / Low-Voltage, Single-Supply General Description The are precision, dual analog switches designed to operate from a single +.7V to +V supply. Low power consumption (µw) makes these parts ideal
More informationN-Channel 200-V (D-S) MOSFET
iy N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = V.. at V G =. V. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET PWM Optimized for Low Q g and Low R g
More information35Ω, Low-Voltage, SPST/SPDT Analog Switches in UCSP Package
19-1994; Rev 3; 2/3 35, Low-Voltage, SPST/SPDT General Description The low on-resistance (R ON ), low-voltage analog switches operate from a single +2.V to +5.5V supply. The / are single-pole/single-throw
More informationN-Channel 100-V (D-S) MOSFET
N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.). at V G = V.. at V G = V. 9 nc O- FEATURE Halogen-free According to IEC 9-- Available TrenchFET Power MOFET % UI Tested APPLICATION
More information3.5Ω (max) at +3V PART. MAX4733EUA -40 C to +85 C 8 µmax MAX4732. Pin Configurations/Functional Diagrams/Truth Tables TOP VIEW (BUMPS ON BOTTOM) NC1
9-264; Rev 2 2/6 Ω, Dual SPST Analog Switches in UCSP General Description The MAX473// low-voltage, dual, single-pole/single-throw (SPST) analog switches operate from a single +2V to +V supply and handle
More informationN-Channel 20-V (D-S) MOSFET
New Product N-Channel -V (-) MOFET i3y PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V 3 nc.5 at V G =.5 V FEATURE Halogen-free According to IEC 9-- TrenchFET Power MOFET % R g and UI Tested
More informationPrecision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers
Precision 8-Ch/ual 4-Ch Low Voltage Analog Multiplexers ESCRIPTION The G948, G949 uses BiCMOS wafer fabrication technology that allows the G948, G949 to operate on single and dual supplies. Single supply
More informationP-Channel 30-V (D-S) MOSFET
i59ay P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).5 at V G = - V - 29-3 nc.775 at V G = -.5 V - 23 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET
More informationN-Channel 40-V (D-S) MOSFET
New Product N-Channel -V (-) MOFET i2y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).75 at V G = V 2.5.9 at V G =.5 V 8.7 2 nc FEATURE Halogen-free According to IEC 29-2-2 Available TrenchFET Power
More informationDLA LAND AND MARITIME COLUMBUS, OHIO TITLE MICROCIRCUIT, LINEAR, CMOS SPDT SWITCH, MONOLITHIC SILICON REVISIONS
REVISIONS LTR DESCRIPTION DTE PPROVED Prepared in accordance with SME Y14.24 Vendor item drawing REV PGE REV PGE REV STTUS OF PGES REV PGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 PMIC N/ PREPRED BY RICK OFFICER
More informationPS381/PS383/PS385. Precision, 17V Analog Switches. Features. Applications. Functional Diagrams, Pin Configurations, and Truth Tables
79797979797979797979797979 Features Low On-Resistance (Ω typ) Minimizes Distortion and Error Voltages Low Glitching Reduces Step Errors in Sample-and-Holds. Charge Injection, pc typ Single Supply (+V to
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) ( ) I (A) Q g (Typ).8 @ V G = V 9.6 3 5.3 @ V G = 4.5 V 7.5 FEATURE TrenchFET Power MOFET Advanced High Cell ensity Process % R g Tested APPLICATION Load
More informationLow Drift, Low Power Instrumentation Amplifier AD621
a FEATURES EASY TO USE Pin-Strappable Gains of 0 and 00 All Errors Specified for Total System Performance Higher Performance than Discrete In Amp Designs Available in -Lead DIP and SOIC Low Power,.3 ma
More informationN-Channel 200-V (D-S) MOSFET
i6y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).8 at V G = V.. at V G = 6. V. FEATURE Halogen-free According to IEC 69-- efinition TrenchFET Power MOFET PWM Optimized for fast witching
More informationN-Channel 30-V (D-S) MOSFET
i4336y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) (Ω) I (A) Q g (Typ) 3.35 at V G = V 5.4 at V G = 4.5 V 36 O-8 FEATURE Ultra Low On-Resistance Using High ensity TrenchFET Gen II Power MOFET Technology
More informationP-Channel 30 V (D-S) MOSFET
P-Channel 3 V (-) MOFET i443y PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) d Q g (TYP.).6 at V G = - V -5.3-3.74 at V G = -6 V -3. 54 nc.9 at V G = -4.5 V -.8 FEATURE TrenchFET power MOFET % R g and UI tested
More informationCase Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:
+SCOPE: TTL COMPATIBLE CMOS ANALOG SWITCHES Device Type Generic Number 0 DG300A(x)/883B 02 DG30A(x)/883B 03 DG302A(x)/883B 04 DG303A(x)/883B Case Outline(s). The case outlines shall be designated in Mil-Std-835
More informationPin Configurations/Functional Diagrams/Truth Tables IN V+ GND SOT23-6* MAX4544 ON OFF OFF ON SWITCHES SHOWN FOR "0" INPUT. Maxim Integrated Products 1
9-; Rev ; / Low-Voltage, Single-Supply General Description The MAX MAX are precision, dual analog switches designed to operate from a single +.V to +V supply. Low power consumption (µw) makes these parts
More informationN-Channel 40-V (D-S) MOSFET
ir8p N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).5 at V G = V. at V G =.5 V FEATURE Halogen-free According to IEC 9-- efinition Q g Optimized % R g Tested % UI Tested Compliant
More informationPrecision, 16-Channel/Dual 8-Channel, High-Performance, CMOS Analog Multiplexers
9-27; Rev 3; 3/ Precision, 6-Channel/Dual 8-Channel, General Description The MA36/MA37 precision, monolithic, CMOS analog multiplexers (muxes) offer low on-resistance (less than Ω), which is matched to
More informationP-Channel 30-V (D-S) MOSFET
i4435by P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = - V - 9. - 3.35 at V G = - 4.5 V - 6.9 FEATURE Halogen-free According to IEC 649-- efinition TrenchFET Power MOFET Advanced
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.) - 3.2 at V G = - V -..35 at V G = -.5 V - 9. 5 nc O-8 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET
More informationEvaluation Board for 8-/10-/12-Bit, Parallel Input, Dual-Channel, Current Output DAC EVAL-AD5428/AD5440/AD5447EB
Evaluation Board for 8-/0-/-Bit, Parallel Input, Dual-Channel, Current Output DAC EVAL-AD58/AD50/AD5EB FEATURES Operates from dual ± V and 5 V supplies On-board reference and output amplifiers Direct hookup
More informationN-Channel 30-V (D-S) MOSFET
N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).9 at V G = V 6 3 nc.5 at V G =.5 V FEATURE Halogen-free According to IEC 69-- efinition Extremely Low Q gd WFET Technology for
More informationAOZ6135 High Performance, Low R ON, 1Ω SPDT Analog Switch
OZ6135 High Performance, Low R ON, 1Ω PDT nalog witch General Description The OZ6135 is a high performance single-pole double-throw (PDT), low power, TTL-compatible bus switch. The OZ6135 can handle analog
More informationN-Channel 40-V (D-S) MOSFET
i5y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).33 at V G = V 3.39 at V G =.5 V 33 3.5 nc FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R g and
More informationPrecision, Quad, SPDT, CMOS Analog Switch
19-0189; Rev 1; 6/99 Precision, Quad, SPDT, MOS Analog Switch General Description The is a precision, quad, single-pole doublethrow (SPDT) analog switch. The four independent switches operate with bipolar
More informationM74HCT138TTR 3 TO 8 LINE DECODER (INVERTING)
3 TO 8 LINE DECODER (INVERTING) HIGH SPEED: t PD = 16ns (TYP.) at V CC = 4.5V LOW POWER DISSIPATION: I CC = 4µA(MAX.) at T A =25 C COMPATIBLE WITH TTL OUTPUTS : V IH = 2V (MIN.) V IL = 0.8V (MAX) SYMMETRICAL
More information8-CHANNEL MULTIPLEXER DESCRIPTION: FEATURES: SEi 338RP
A0 1 16 A1 V+ V- GND EN V- NO1 NO2 NO3 SEi 338RP A2 GND V+ NO5 NO6 NO1 NO2 NO3 NO4 NO5 NO6 NO7 NO8 COM NO4 NO7 CMOS DECODE LOGIC COM 8 9 NO8 A2 A1A0 EN FEATURES: DESCRIPTION: RAD-PAK Technology hardened
More informationPART TOP VIEW. Maxim Integrated Products 1
9-96; Rev ; 2/ 45, SPDT Analog Switch in SOT23-8 General Description The is a dual-supply, single-pole/doublethrow (SPDT) analog switch. On-resistance is 45 max and flat (7 max) over the specified signal
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-) MOFET PowerPAK 22-8 ingle 8 5 6 7 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see /doc?9992 3.3 mm Top View
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 40 V V GS Gate-Source Voltage ±20 V
General escription These N-Channel enhancement mode power field effect transistors are using trench MO technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationImproved Quad CMOS Analog Switches
Improved Quad CMOS Analog Switches DG211B, DG212B DESCRIPTION The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in proprietary
More informationObsolete Product(s) - Obsolete Product(s)
DUAL 4 CHANNEL MULTIPLEXER 3 STATE OUTPUT HIGH SPEED: t PD = 16ns (TYP.) at V CC = 6V LOW POWER DISSIPATION: I CC = 4µA(MAX.) at T A =25 C HIGH NOISE IMMUNITY: V NIH = V NIL = 28 % V CC (MIN.) SYMMETRICAL
More informationP-Channel 30 V (D-S) MOSFET
P-Channel 3 V (-) MOFET 8 7 O-8 ingle 5 FEATURE TrenchFET Gen III p-channel power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 Top View PROUCT
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-) MOFET i443y 8 7 6 O-8 ingle Top View PROUCT UMMARY V (V) -2 R (on) max. () at V G = -4. V.4 R (on) max. () at V G = -2. V.2 R (on) max. () at V G = -.8 V.3 Q g typ. (nc) 39 I (A) -.4
More informationON OFF PART. Pin Configurations/Functional Diagrams/Truth Tables 5 V+ LOGIC
9-88; Rev ; /7 25Ω SPST Analog Switches in SOT23-6 General Description The are dual-supply single-pole/single-throw (SPST) switches. On-resistance is 25Ω max and flat (2Ω max) over the specified signal
More informationDescription. For Fairchild s definition of Eco Status, please visit:
FSA2357 Low R ON 3:1 Analog Switch Features 10µA Maximum I CCT Current Over an Expanded Control Voltage Range: V IN=2.6V, V CC=4.5V On Capacitance (C ON): 70pF Typical 0.55Ω Typical On Resistance (R ON)
More informationN-Channel 30-V (D-S) MOSFET with Schottky Diode
New Product i48by N-Channel -V (-) MOFET with chottky iode MOFET PROUCT UMMARY V (V) r (on) ( ) I (A).35 @ V G = V. @ V G = 4.5 V 8 CHOTTKY PROUCT UMMARY V (V) iode Forward Voltage V (V) I F (A).53 V @
More informationObsolete Product(s) - Obsolete Product(s)
8-INPUT NAND GATE HIGH SPEED: t PD = 13ns (TYP.) at V CC = 6V LOW POWER DISSIPATION: I CC = 1µA(MAX.) at T A =25 C HIGH NOISE IMMUNITY: V NIH = V NIL = 28 % V CC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: I
More informationDevice Type Generic Number Circuit Function 01 DG406A(x)/883B 16-Channel Analog Multiplexer 02 DG407A(x)/883B Dual 8-Channel Analog Multiplexer
SCOPE: IMPROVED 6-CHANNEL/DUAL 8-CHANNEL, HIGH PERFORMANCE CMOS ANALOG MULTIPLEXER Device Type Generic Number Circuit Function 0 DG406A(x)/883B 6-Channel Analog Multiplexer DG407A(x)/883B Dual 8-Channel
More informationM74HC20TTR DUAL 4-INPUT NAND GATE
DUAL 4-INPUT NAND GATE HIGH SPEED: t PD = 9ns (TYP.) at V CC = 6V LOW POWER DISSIPATION: I CC = 1µA(MAX.) at T A =25 C HIGH NOISE IMMUNITY: V NIH = V NIL = 28 % V CC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:
More information74HC General description. 2. Features. Octal D-type flip-flop; positive-edge trigger; 3-state; inverting
Rev. 03 11 November 2004 Product data sheet 1. General description 2. Features The is a high-speed Si-gate CMOS device and is pin compatible with low-power Schottky TTL (LSTTL). The is specified in compliance
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-) MOFET i887b PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) a, e Q g (Typ.).76 at V G = -4.5 V -2.9-2 at V G = -2.5 V -2.5 45 at V G = -.8 V -2. 7.5 nc.32 at V G = -.5 V -.5 FEATURE TrenchFET
More informationN-Channel 60 V (D-S) MOSFET
N-Channel V (-) MOFET i485by 8 7 O-8 ingle 5 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 PROUCT UMMARY
More information