PART. Maxim Integrated Products 1

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1 9-704; Rev 5; /09 Improved Precision Micropower General Description The is a precision two-terminal shunt mode, bandgap voltage reference with a fixed reverse breakdown voltage of.225v. Ideal for space-critical applications, the is offered in the subminiature 3-pin SC70 surface-mount package (.8mm.8mm), 50% smaller than comparable devices in SOT23 surfacemount packages (SOT23 versions are also available). Laser-trimmed resistors ensure precise initial accuracy. With a 00ppm/ C temperature coefficient, the device is offered in four grades of initial accuracy ranging from 0.% to %. The has a 60µA to 2mA shunt current capability with low dynamic impedance, ensuring stable reverse-breakdown voltage accuracy over a wide range of operating temperatures and currents. The does not require an external stabilizing capacitor while ensuring stability with any capacitive load. The is guaranteed over the temperature range -40 C to +25 C. Applications TOP VIEW Portable, Battery-Powered Equipment Notebook Computers Cell Phones Industrial Process Controls SC70-3/SOT23-3 Pin Configuration 3 N.C.* *PIN 3 MUST BE LEFT FLOATING OR CONNECTED TO PIN 2. Features Ultra-Small 3-Pin SC70 Package 0.% (max) Initial Accuracy 00ppm/ C (max) Temperature Coefficient Guaranteed over -40 C to +25 C Temperature Range Wide Operating Current Range: 60µA to 2mA Low 20µV RMS Output Noise (0Hz to 0kHz).225V Fixed Reverse Breakdown Voltage No Output Capacitors Required Tolerates Capacitive Loads PART PART Ordering Information TEMP RANGE INITIAL ACCURACY (%) PIN- PACKAGE Selector Guide OUTPUT VOLTAGE (V) TEMPCO (ppm/ C) A -.2-T B -.2-T C -.2-T D -.2-T TOP MARK AIX3-.2+T -40 C to +85 C 3 SC70-3 ABF AIM3-.2+T -40 C to +85 C 3 SOT23-3 FZEB AEX3-.2+T -40 C to +25 C 3 SC70-3 ALB AEM3-.2+T -40 C to +25 C 3 SOT23-3 FZNC BIX3-.2+T -40 C to +85 C 3 SC70-3 ABG BIM3-.2+T -40 C to +85 C 3 SOT23-3 FZEC BEX3-.2+T -40 C to +25 C 3 SC70-3 ALC BEM3-.2+T -40 C to +25 C 3 SOT23-3 FZND CIX3-.2+T -40 C to +85 C 3 SC70-3 ABH CIM3-.2+T -40 C to +85 C 3 SOT23-3 FZED CEX3-.2+T -40 C to +25 C 3 SC70-3 ALD CEM3-.2+T -40 C to +25 C 3 SOT23-3 FZNE DIX3-.2+T -40 C to +85 C 3 SC70-3 ABI DIM3-.2+T -40 C to +85 C 3 SOT23-3 FZEE DEX3-.2+T -40 C to +25 C 3 SC70-3 ALE DEM3-.2+T -40 C to +25 C 3 SOT23-3 FZNF Note: For leaded version, contact factory. *See Selector Guide for a listing of Output Voltage, Initial Accuracy, and Temperature Coefficient specifications. +Denotes a lead(pb)-free/rohs-compliant package. Maxim Integrated Products For pricing, delivery, and ordering information, please contact Maxim Direct at , or visit Maxim s website at

2 ABSOLUTE MAXIMUM RATINGS Reverse Current (cathode to anode)...20ma Forward Current (anode to cathode)...0ma Continuous Power Dissipation (T A = +70 C) 3-Pin SC70 (derate 2.7mW/ C above +70 C)...74mW 3-Pin SOT23 (derate 4.0mW/ C above +70 C)...320mW Operating Temperature Range _I _ C to +85 C _E _ C to +25 C Storage Temperature Range C to +50 C Junction Temperature C Lead Temperature (soldering, 0s) C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (I R = 00µA, T A = T MIN to T MAX, unless otherwise noted. Typical values are at T A = +25 C.) (Note ) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Reverse Breakdown Voltage V R T A = +25 C Reverse Breakdown Voltage Tolerance (Note 2) ΔV R A (0.%) B (0.2%) C (0.5%) D (.0%) A (0.%) ±.2 ±9.2 B (0.2%) ±2.4 ±0.4 C (0.5%) ±6.0 ±4 D (.0%) ±2 ±24 A/B/C Minimum Operating Current I RMIN D V mv μa Average Reverse Voltage Temperature Coefficient (Notes 2 and 3) Reverse Breakdown Voltage Change with Operating Current Change Reverse Dynamic Impedance (Note 3) ΔV R /ΔT ΔV R /ΔI R Z R I R = 0mA ±20 I R = ma A/B/C ±5 ±00 D ±5 ±50 I R = 00μA ±5 I RMIN I R ma ma I R 2mA A/B/C D A/B/C D ppm/ C I R = ma, f = 20Hz, A/B/C Ω I AC = 0.I R D mv 2

3 ELECTRICAL CHARACTERISTICS (continued) (I R = 00µA, T A = T MIN to T MAX, unless otherwise noted. Typical values are at T A = +25 C.) (Note ) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Wideband Noise e N I R = 00μA, 0Hz f 0kHz 20 μv RMS Reverse Breakdown Voltage Long-Term Stability ΔV R T = 000h, I R = 00μA 20 ppm Note : All devices are 00% production tested at +25 C and are guaranteed by design for T A = T MIN to T MAX, as specified. Note 2: The overtemperature limit for Reverse Breakdown Voltage Tolerance is defined as the room-temperature Reverse Breakdown Voltage Tolerance ±[(ΔV R / ΔT)(maxΔT)(V R )], where ΔV R / ΔT is the V R temperature coefficient, maxδt is the maximum difference in temperature from the reference point of +25 C to T MIN or T MAX, and V R is the reverse breakdown voltage. The total overtemperature tolerance for the different grades in the temperature range where maxδt = +65 C is shown below: A grade: ±0.75% = ±0.% ±00ppm/ C 65 C B grade: ±0.85% = ±0.2% ±00ppm/ C 65 C C grade: ±.5% = ±0.5% ±00ppm/ C 65 C D grade: ±.98% = ±.0% ±50ppm/ C 65 C The total overtemperature tolerance for the different grades in the extended temperature range where maxδt = +00 C is shown below: A grade: ±.% = ±0.% ±00ppm/ C 00 C B grade: ±.2% = ±0.2% ±00ppm/ C 00 C C grade: ±.5% = ±0.5% ±00ppm/ C 00 C D grade: ±2.5% = ±.0% ±50ppm/ C 00 C Therefore, as an example, the A-grade -.2 has an overtemperature reverse breakdown voltage tolerance of ±2.5V x 0.75% = ±9mV. Note 3: Guaranteed by design. (I R = 00µA, SC70-3 package, T A = +25 C, unless otherwise noted.) Typical Operating Characteristics REVERSE CURRENT (µa) REVERSE CHARACTERISTICS AND MINIMUM OPERATING CURRENT -0 REFERENCE VOLTAGE CHANGE (mv) TEMPERATURE DRIFT toc02 REVERSE VOLTAGE CHANGE (mv) REVERSE VOLTAGE vs. CURRENT T A = +85 C T A = +25 C T A = +25 C T A = -40 C toc REVERSE VOLTAGE (V) TEMPERATURE ( C) SOURCE CURRENT (ma) 3

4 Typical Operating Characteristics (continued) (I R = 00µA, SC70-3 package, T A = +25 C, unless otherwise noted.) VGEN LOAD-TRANSIENT RESPONSE -04 2V/div VGEN LOAD-TRANSIENT RESPONSE -05 2V/div VGEN LOAD-TRANSIENT RESPONSE -06 2V/div VR (AC-COUPLED) I SHUNT = 00μA ± 25μA, R L = 00kΩ SEE FIGURE 2mV/div VR (AC-COUPLED) I SHUNT = ma ± 250μA, R L = 0kΩ SEE FIGURE 2mV/div VR I SHUNT = 0mA ± 2.5mA, R L = kω SEE FIGURE 2mV/div 0μs/div 0μs/div 0μs/div 5V V IN OV STARTUP CHARACTERISTICS R S = 30kΩ SEE FIGURE OUTPUT IMPEDANCE vs. FREQUENCY C = ,000 NOISE vs. FREQUENCY I R = 200μA -09.5V.0V V OUT O.5V 0V RESPONSE TIME (μs) IMPEDANCE (Ω) 0 0. I R = 50μA I R = ma 00 k 0k 00k M FREQUENCY (Hz) C = μf NOISE (nv/ Hz) k 0k FREQUENCY (Hz) V B + - V R kω I SHUNT R L V IN Hz RATE R S 30kΩ V R V GEN Figure. Load-Transient Test Circuit Figure 2. Startup Characteristics Test Circuit 4

5 PIN NAME FUNCTION + Positive Terminal of the Shunt Reference 2 Negative Terminal of the Shunt Reference 3 N.C. Leave this pin unconnected, or connect to pin 2. Pin Description Detailed Description The shunt references use the bandgap principle to produce a stable, accurate voltage. The device behaves similarly to an ideal zener diode; a fixed voltage of +.225V is maintained across its output terminals when biased with 60µA to 2mA of reverse current. The behaves similarly to a silicon diode when biased with forward currents up 0mA. Figure 3 shows a typical operating circuit. The is ideal for providing a stable reference from a highvoltage power supply. Applications Information The s internal pass transistor is used to maintain a constant output voltage (V SHUNT ) by sinking the necessary amount of current across a source resistor. The source resistance (R S ) is determined from the load current (I LOAD ) range, supply voltage (V S ) variations, V SHUNT, and desired quiescent current. Choose the value of R S when V S is at a minimum and I LOAD is at a maximum. Maintain a minimum I SHUNT of 60µA at all times. The R S value should be large enough to keep I SHUNT less than 2mA for proper regulation when V S is maximum and I LOAD is at a minimum. To prevent damage to the device, I SHUNT should never exceed 20mA. Therefore, the value of R S is bounded by the following equation: [V S(MIN) - V R ] / [60µA + I LOAD(MAX) ] > R S > [V S(MAX) - V R ] / [20mA + I LOAD(MIN) ] Choosing a larger resistance minimizes the total power dissipation in the circuit by reducing the shunt current (P D(TOTAL) = V S I SHUNT ). Provide a safety margin to incorporate the worst-case tolerance of the resistor R S I SHUNT V S I SHUNT + I LOAD I LOAD Figure 3. Typical Operating Circuit used. Ensure that the resistor s power rating is adequate, using the following general power equation: P R = I SHUNT (V S(MAX) - V R ) Output Capacitance The does not require an external capacitor for frequency stability and is stable for any output capacitance. Temperature Performance The typically exhibits an output voltage temperature coefficient within ±5ppm/ C. The polarity of the temperature coefficient may be different from one device to another; some may have positive coefficients, and others may have negative coefficients. V R 5

6 High Temperature Operation The maximum junction temperature of the is +50 C. The maximum operating temperature for the _E_ is +25 C. At a maximum load current of 5mA and a maximum output voltage of 5V, the part will dissipate 75mW of power. The power dissipation limits of the 3-pin SC70 call for a derating value of 2.7mW/ C above +70 C and thus for 75mW of power dissipation, the part will selfheat to C above ambient temperature. If the ambient temperature is +25 C, the part operates at C, thereby exceeding the maximum junction temperature value of +50 C. For high-temperature operation, care must be taken to ensure the combination of ambient temperature, output power dissipation, and package thermal resistance does not conspire to raise the device temperature beyond that listed in the Absolute Maximum Ratings. Either reduce the output load current or the ambient temperature to keep the part within the limits. TRANSISTOR COUNT: 60 PROCESS: BiCMOS Chip Information Package Information For the latest package outline information and land patterns, go to Note that a +, #, or - in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing pertains to the package regardless of RoHS status. PACKAGE TYPE PACKAGE CODE DOCUMENT NO. 3 SC70-3 X SOT23-3 U

7 Revision History REVISION NUMBER REVISION DATE DESCRIPTION PAGES CHANGED 5 /09 Changed part numbers to indicate lead-free Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. Maxim Integrated Products, 20 San Gabriel Drive, Sunnyvale, CA Maxim Integrated Products Maxim is a registered trademark of Maxim Integrated Products, Inc.