G-LINK. GLT5640L16 CMOS Synchronous Dynamic RAM. Description. Features

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1 Description The are high-speed 67,108,864-bit synchronous dynamic random-access moeories, organized as 1,048,576 x 16 x 4 (word x bit x bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture and clock fre quency up to 183MHz. All input and outputs are synchronized with the postive edge of the clock.the synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).These products are packaged in 54-pin TSOPII. Features Single 3.3V ( ±0.3V ) power supply High speed clock cycle time -5.5:183MHz<3-3-3>,-6:166MHz<3-3-3>, -7:143HMz<3-3-3>, -8: 125MHz<3-3-3> Fully synchronous operation referenced to clock rising edge Possible to assert random column access in every cycle Quad internal banks contorlled by BA0 & BA1 (Bank Select) Byte control by LM and UM Programmable Wrap sequence (Sequential / Interleave) Programmable burst length (1, 2, 4, 8 and full page) Programmable / latency (2 and 3) Automatic precharge and controlled precharge CBR (Auto) refresh and self refresh X16 organization LVTTL compatible inputs and outputs 4,096 refresh cycles / 64ms Burst termination by Burst stop and command Rev.2.0 Page 1

2 Pin Configurations V DD 0 V D 1 2 V SSQ 3 4 V D 5 6 V SSQ 7 V DD LM / / / BA0 BA1 A 10 A 0 A 1 A 2 A 3 V DD V SS 15 V SSQ V D V SSQ 10 9 V D 8 V SS NC UM NC A 11 A 9 A 8 A 7 A 6 A 5 A 4 V SS Pin Descriptions Pin Name Function Pin Name Function Master Clock M Mask Enable Clock Enable A0-11 Address Input / Chip Select BA0,1 ddress / Row Address Strobe V DD Power Supply / Column Address Strobe V D Power Supply for / Enable V SS Ground 0 ~ 15 Data I/O V SSQ Ground for Rev.2.0 Page 2

3 Block Diagram Clock Generator Address Mode Register Row Address Buffer & Refresh Counter Row Decoder Bank D Bank C Decoder Control Logic Column Address Buffer & Burst Counter Sense Amplifier Column Decoder & Latch Circuit Data Control Circuit Latch Circuit Input & Output Buffer M Rev.2.0 Page 3

4 Pin Function Symbol Input Function Input Maste Clock: Other inputs signals are referenecd to the rising edge Input Clock Enable: HIGH activates, and LOW deactivates internal clock signals, device input buffers and output drivers. Deactivating the clock provides PRECHARGE POR-DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POR- DOWN (row ACTIVE in any bank). / Input Chip Select: # enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when # is registered HIGH. # provides for external bank selection on systems with multiple banks. # is considered part of the command code. /, /, / Input Inputs: #, # and # (along with #) define the command being entered. A0 - A13 Input Address Inputs: Provide the row address for ACTIVE commands, and the column address and AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the memory array in the respective bank. The row address is specified by A0-A11. The column address is specified by A0-A7 BA0,BA1 Input ddress Inputs: BA0 and BA1 define to which bank an ACTIVE, READ, WRITE or PRECHARGE command is being applied. M, UM, LM Input Address Inputs: Provide the row address for ACTIVE commands (row address A0- ), and the column address and AUTO PRECHARGE bit for READ/WRITE commands (column address A0-A7 with defining AUTO PRECHARGE), to select one location out of the memory array in the respective bank I/O Data Input / Output: Data bus V DD, V SS Supply Power Supply for the memory array and peripheral circuitry V D, V SSQ Supply Power Supply are supplied to the output buffers only Rev.2.0 Page 4

5 Absolute Maximum tings Parameter Symbol Conditions Value Unit Supply Voltage V DD with respect to V SS -0.5 to 4.6 V Supply Voltage for Output V D with respect to V SSQ -0.5 to 4.6 V Input Voltage V I with respect to V SS -0.5 to V DD +0.5 V Output Voltage V O with respect to V SSQ -0.5 to V D +0.5 V Short circuit output current I O 50 ma Power dissipation P D T a = 25 C 1 W Operating temperature T OPT 0 to 70 C Storage temperature T STG -65 to 150 C Caution Exposing the device to stress above those listed in Absolute Maximum tings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum ting conditions for extended periods may affect device reliability. Recommended Operating Conditions (T a = 0 ~ 70 C, unless otherwise noted) Parameter Symbol Limits Min. Typ. Max. Unit Supply Voltage V DD V Supply Voltage for V D V Ground V SS V Ground for V SSQ V High Level Input Voltage (all inputs) V IH 2.0 V DD V Low Level Input Voltage (all inputs) V IL V Note : 1.All voltages are referenced to Vss = 0V. 2.VIH (max) is acceptable 5.6V AC pulse width withe 3ns of duration. 3.VIL (min) is acceptable -2.0V AC pulse width with 3ns of duration. Pin Capacitance (Ta = 0 ~ 70 C, V DD = V D = 3.3 ± 0.3V, V SS = V SSQ = 0V, unless otherwise noted) Parameter Symbol Min Max Unit Input Capacitance, address & control pin C IN pf Input Capacitance, pin C pf Data input / output capacitance C I/O pf Rev.2.0 Page 5

6 DC Characteristics 1 (Ta = 0 ~ 70 C, V DD = V D = 3.3± 0.3V, V SS = V SSQ = 0V, Ouput Open, unless otherwise noted) Parameter Symbol Test Conditions Limits (max.) Unit Notes Operating current I CC1 One bank active t RC = t RC(MIN), t = t (MIN), ma 1 BL = 1, CL=3 standby current I CC2 P V IL(MAX), t CK = 15ns in power down mode I CC2 PS V IL(MAX), V IL(MAX) ma standby current I CC2 N V DD - 0.2V in non power down mode t CK = 15ns, V IH(MIN) ma 2 I CC2 NS V DD - 0.2V V IL(MAX), V IH(MIN) ma All input signals are stable. Active standby current in I CC3 P V IL(MAX), t CK = 10ns power down mode I CC3 PS V IL(MAX), V IL(MAX) ma Active standby current in I CC3 N V DD - 0.2V Nonpower down mode t CK = 15ns, V IH(MIN) ma 2 I CC3 NS V DD - 0.2V V IL(MAX), V IH(MIN) ma All input signals are stable. Operating current (Burst mode) I CC4 All banks active t CK = t CK(MIN), BL=4, CL=3 All banks active ma Refresh current I CC5 t RC = t RC(MIN), t = t (MIN) ma Self refresh current I CC6 0.2V ma 3 L ma 4 NOTES 1. I CC(max) is specified at the output open condition. 2. Input signals are changed one time during 30ns. 3. Normal version: 4. Low power version: L DC Characteristics 2 (Ta = 0 ~ 70 C, V DD = V D = V, V SS = V SSQ = 0V, unless otherwise noted) ± Parameter Symbol Test Condition Min Max Unit Input leakage current (Inputs) I I (L) 0 VIN V DD(MAX) Pins not under test = 0V -5 5 ua Output leakage current (I/O pins) I O (L) 0 VOUT V DD(MAX) # in H - Z., D OUT is disabled -5 5 ua High level output voltage V OH I OH = -2mA 2.4 V Low level output voltage V OL I OL = 2mA 0.4 V Rev.2.0 Page 6

7 AC Characteristics (Ta = 0 ~ 70 C, V DD = V D = V, V SS = V SSQ = 0V, unless otherwise noted) Test Conditions AC input Levels (V IH /V IL ) 2.0 / 0.8V Input timing reference level / 1.4V Output timing reference level Input rise and fall time 1ns Output load condition 50pF Note): 1.if clock rising time is longer than 1ns, (tr/2-0.5ns) should be added to the parameter. Output Load Conditions ± V D V D V OUT Z = 50 Ω Device Under Test 50PF Rev.2.0 Page 7

8 A.C. Characteristics (Ta = 0 ~ 70 C, V DD = V D = 3.3 ± 0.3V, V SS = V SSQ = 0V, unless otherwise noted) Limits Parameter Symbol Unit Min Max Min Max Min Max Min Max cycle time CL = 3 t CK ns CL = 2 t CK ns high pulse width t CH ns low pulse width t CL ns Transition time of t T ns Input Setup time t IS ns Input Hold time t IH ns Row Cycle Time t RC ns Refresh Cycle Time t RFC ns Row to Column Delay t RCD ns Row active time t k k k k ns Row time t RP ns Recovery time t WR ns Act to Delay time t RRD ns Mode Register Set Cycle time t RSC ns Refresh Interval time t REF ms Note Switching Chracteisics (Ta = 0 ~ 70 C, V DD = V D = 3.3 ± 0.3V, V SS = V SSQ = 0V, unless otherwise noted) Parameter Symbol Unit Note Min Ma Min Ma Min Ma Min Ma Access time from CL = 3 t AC ns *1 CL = 2 t AC ns *1 Output Hold time from CL = 3 t CH ns *1 CL = 2 t CH ns *1 Delay time, output low-impedance t OLZ ns from Delay time, output high-impedance from LCK t OHZ ns Limits Note : 1. If clock rising time is longer than 1ns, (tr/2-0.5ns) should be added to the parameter. Rev.2.0 Page 8

9 C KE G-LINK Basic Features and Function Description 1. Simplified State Diagram Self Refresh Mode Register Set MRS IDLE S E LF entry SELF exit REF AUTO Refresh ACT C KE Power Down ROW ACTIVE Active Power Down WRITE SUSPEND ( recovery) with Auto WRITE BST recovery W rite w ith Auto predharge w ith PRE Auto R ead with (write recovery) W rite with R ead Auto BST READ with Auto READ SUSPEND PRE ( termination) WRITE A SUSPEND WRITE A Auto (write recovery) PRE (Precha rge te rm ination) READ A READA SUSPEND POR ON Automatic sequence Manual input Note: After the AUTO refresh operation, precharge operation is performed automatically and enter the IDLE state Rev.2.0 Page 9

10 2.Truth Table 2.1 Truth Table FUNCTION Symbol A11 n - 1 n BA A9 - A0 Device deselect DESL H X H X X X X X X No operation NOP H X L H H H X X X Mode register set MRS H X L L L L L L V Bank activate ACT H X L L H H V V V READ H X L H L H V L V with auto precharge READA H X L H L H V H V WRIT H X L H L L V L V with auto precharge WRITA H X L H L L V H V select bank PRE H X L L H L V L X all banks PALL H X L L H L X H X Burst stop BST H X L H H L X X X CBR (Auto) refresh REF H H L L L H X X X Self refresh SELF H L L L L H X X X 2.2 M Truth Table M FUNCTION Symbol n - 1 n - 1 Data write/output enable ENB H X L Data mask/output disable MASK H X H 2.3 Truth Table Add - Current State Function Symbol n - 1 n ress Activating Clock suspend mode entry H L X X X X X Any Clock suspend L L X X X X X Clock suspend Clock suspend mode exit L H X X X X X Idle CBR refresh command REF H H L L L H X Idle Self refresh entry SELF H L L L L H X Self refresh Self refresh exit L H L H H H X L H H X X X X Idle Power down entry H L X X X X X Power down Power down exit L H X X X X X H : High level, L : Low level X : High or Low level (Don t care), V : Valid Data input Rev.2.0 Page 10

11 2.4 Operative Table (note 1) (1/3) HCurrent state Address Action Notes Idle H X X X X DESL Nop or Power down 2 L H H X X NOP or BST Nop or Power down 2 L H L H BA, CA, READ/READA ILLEGAL 3 L H L L BA, CA, WRIT/WRITA ILLEGAL 3 L L H H BR, RA ACT Row active L L H L BA, PRE/PALL Nop L L L H X REF/SELF Refresh or Self refresh 4 L L L L Op-Code MPS Mode register access Row active H X X X X DESL Nop L H H X X NOP or BST Nop L H L H BA, CA, READ/READA Begin read : Determine AP 5 L H L L BA, CA, WRIT/WRITA Begin write : Determine AP 5 L L H H BA, RA ACT ILLEGAL 3 L L H L BA, PRE/PALL 6 L L L H X REF/SELF ILLEGAL L L L L Op-Code MRS ILLEGAL H X X X X DESL Continue burst to end Row active L H H H X NOP Continue burst to end Row active L H H L X BST Burst stop Row active L H L H BA, CA, READ/READA Term burst, new read : Determine AP 7 L H L L BA, CA, WRIT/WRITA Term burst, start write : Determine AP 7,8 L L H H BA, RA ACT ILLEGAL 3 L L H L BA, PRE/PALL Term burst, precharging L L L H X REF/SELF ILLEGAL L L L L Op-Code MRS ILLEGAL H X X X X DESL Continue burst to end write recovering L H H H X NOP Continue burst to end write recovering L H H L X BST Burst stop Row active L H L H BA, CA, READ/READA Term burst, start read : Determine AP 7,8 L H L L BA, CA, WRIT/WRITA Term burst, new write : Determine AP 7 L L H H BA, RA ACT ILLEGAL 3 L L H L BA, PRE/PALL Term burst, precharging 9 Rev.2.0 Page 11

12 (2/3) Current state CA Address Action Notes with auto H X X X X DESL Continue burst to end Precharging precharge L H H H X NOP Continue burst to end Precharging L H H L X BST ILLEGAL L H L H BA, CA, READ/READA ILLEGAL 11 L H L L BA, CA, WRIT/WRITA ILLEGAL 11 L L H H BA, RA ACT ILLEGAL 3,11 L L H L BA, PRE/PALL ILLEGAL 3,11 L L L H X PEF/SELF ILLEGAL L L L L Op - Code MRS ILLEGAL with auto H X X X X DESL Continue burst to end write precharge recovering with auto precharte L H H H X NOP Continue burst to end write recovering with auto precharge L H H L X BST ILLEGAL L H L H BA, CA, READ/READA ILLEGAL 11 L H L L BA, CA, WRIT/WRITA ILLEGAL 11 L L H H BA, RA ACT ILLEGAL 3,11 L L H L BA, PRE/PALL ILLEGAL 3,11 L L L H X REF/SELF ILLEGAL L L L L Op - code MRS ILLEGAL Precharging H X X X X DESL Nop Enter idle after t RP L H H H X NOP Nop Enter idle after t RP L H H L X BST Nop Enter idle after t RP L H L H BA, CA, READ/READA ILLEGAL 3 L H L L BA, CA, WRIT/WRITA ILLEGAL 3 L L H H BA, RA ACT ILLEGAL 3 L L H L BA, PRE/PALL Nop Enter idle after t RP L L L H X REF/SELF ILLEGAL L L L L Op - Code MRS ILLEGAL Row activating H X X X X DESL Nop Enter row active after t RCD L H H H X NOP Nop Enter row active after t RCD L H H L X BST Nop Enter row active after t RCD L H L H BA, CA, READ/READA ILLEGAL 3 L H L L BA, CA, WRIT/WRITA ILLEGAL 3 L L H H BA, RA ACT ILLEGAL 3, 9 L L H L BA, PRE/PALL ILLEGAL 3 L L L H X REF/SELF ILLEGAL L L L L Op - Code MRS ILLEGAL Rev.2.0 Page 12

13 (3/3) Current Address Action Notes recovering recovering with auto precharge Auto Refreshing Mode register setting H X X X X DESL Nop Enter row active after t DPL L H H H X NOP Nop Enter row active after t DPL L H H L X BST Nop Enter row active after t DPL L H L H BA, CA, READ/READA Start read, Determine AP 8 L H L L BA, CA, WRIT/WRITA New write, Determine AP L L H H BA, RA ACT ILLEGAL 3 L L H L BA, PRE/PALL ILLEGAL 3 L L L H X PEF/SELF ILLEGAL L L L L Op - Code MRS ILLEGAL H X X X X DESL Nop Enter precharge after t DPL L H H H X NOP Nop Enter precharge after t DPL L H H L X BST Nop Enter precharge after t DPL L H L H BA, CA, READ/READA ILLEGAL 3,8,11 L H L L BA, CA, WRIT/WRITA ILLEGAL 3,11 L L H H BA, RA ACT ILLEGAL 3,11 L L H L BA, PRE/PALL ILLEGAL 3 L L L H X REF/SELF ILLEGAL L L L L Op - Code MRS ILLEGAL H X X X X DESL Nop Enter idle after t RC L H H X X NOP/BST Nop Enter idle after t RC L H L X X READ/WRIT ILLEGAL L L H X X ACT/PRE/PALL ILLEGAL L L L X X REF/SELF/MRS ILLEGAL H X X X X DESL Nop Enter idle after 2 Clocks L H H H X NOP Nop Enter idle after 2 Clocks L H H L X BST ILLEGAL L H L X X READ/WRITE ILLEGAL L L X X X ACT/PRE/PALL/ REF/SELF/MRS ILLEGAL Note 1. All entries assume that was active (High level) during the preceding clock cycle. 2. If both banks are idle, and is inactive (Low level), the device will enter Power downmode. All input buffers except will be disabled. 3. Illegal to bank in specified states; Function may be legal in the bank indicated by BankAddress(BA), depending on the state of that bank. 4. If both banks are idle, and is inactive (Low level), the device will enter Self refresh mode. All input buffers except will be disabled. 5. Illegal if t RCD is not satisfied. 6. Illegal if t is not satisfied. 7. Must satisfy burst interrupt condition. Rev.2.0 Page 13

14 2.5 Truth Table for (Note 1) Current state Self refresh (S.R.) Self refresh recovery Power down (P.D.) Both banks idle n - 1 n Address Action Notes H X X X X X X INVALID, (n - 1)would exit S.R. L H H X X X X S.R. Recovery 2 L H L H H X X S.R. Recovery 2 L H L H L X X ILLEGAL L H L L X X X ILLEGAL L L X X X X X Maintain S.R. H H H X X X X Idle after t RC H H L H H X X Idle after t RC H H L H L X X ILLEGAL H H L L X X X ILLEGAL H L H X X X X Begin clock suspend next cycle 5 H L L H H X X Begin clock suspend next cycle 5 H L L H L X X ILLEGAL H L L L X X X ILLEGAL L H X X X X X Exit clock suspend next cycle 2 L L X X X X X Maintain clock suspend H X X X X X INVALID, (n - 1) would exit P.D. L H X X X X X EXIT P.D. Idle 2 L L X X X X X Maintain power down mode H H H X X X Refer to operations in Operative Table H H L H X X Refer to operations in Operative Table H H L L H X Refer to operation in Operative Table H H L L L H X Auto Refresh H H L L L L Op - Code Refer to operations in Operative Table H L H X X X Refer to operations in Operative Table H L L H X X Refer to operations in Operative Table H L L L H X Refer to operations in Operative Table H L L L L H X Self refresh 3 H L L L L L Op - Code Refer to operations in Operative Table 1. H : Hight level, L : low level, X : High or low level (Don't care). 2. Low to High transition will re-enable and other inputs asynchronously. A minimum setup time must be satisfied before any command other than EXIT. 3. Power down and Self refresh can be entered only from the both banks idle state. 4. Must be legal command as defined in Operative Table. 5. Illegal if t SREX is not satisfied. Rev.2.0 Page 14

15 3.Initiallization Before starting normal operation, the following power on sequence is necessary to prevent SDRAM from damged or malfunctioning. 1. Apply power and start clock. Attempt to maintain high, N high and NOP condition at the inputs. 2. Maintain stable power, table clock, and NOP input conditions for a minimum of 200us. 3. Issue precharge commands for all bank. (PRE or PREA) 4. After all banks become idle state (after trp), issue 8 or more auto-refresh commands. 5. Issue a mode register set command to initialize the mode regiser. After these sequence, the SDRAM is in idle state and ready for normal operation. 4.Programming the Mode Register The mode register is programmed by the mode register set command using address bits BA0,BA1,A11 through A0 as data inputs. The register retains data until it is reprogrammed or the device loses power. The mode register has four fields; Options : BA0,BA1,BA11 through A7 latency : A6 through A4 Wrap type : A3 Burst length : A2 through A0 Following mode register programming, no command can be asserted befor at least two clock cycles have elapsed. Latency latency is the most critical parameter being set. It tells the device how many clocks must elapse before the data will be available. The value is determined by the frequency of the clock and the speed grade of the device. The value can be programmed as 2 or 3. Burst Length Burst Length is the number of words that will be output or input in read or write cycle. After a read burst is completed, the output bus will become high impedance. The burst length is programmable as 1, 2, 4, 8 or full page. Wrap Type (Burst Sequence) The wrap type specifies the order in which the burst data will be addressed. The order is programmable as either Sequential or Interleave. The method chosen will depend on the type of CPU in the system. Rev.2.0 Page 15

16 5.Mode Register BA0 BA BA0BA1 x x BA0 BA x x LTM O D E WT BL LTM O D E WT BL JEDEC Standard Test Set Burst and Single (for Through Cache) Burst and Burst X = Don t care Burst length Bits2-0 WT = 0 WT = R R R Fullpage R R R R Wrap type 0 1 Sequential Interleave Latency mode Bits Iatency R R 2 3 R R R R Remark R : Reserved Rev.2.0 Page 16

17 5.1 Burst Length and Sequence (Burst of Two) Starting Address (column address A0, binary) Sequential Addressing Sequence (decimal) Interleave Addressing Sequence (decimal) 0 0, 1 0, 1 1 1, 0 1, 0 (Burst of Four) Starting Address (column address A1 - A0, binary) Sequential Addressing Sequence (decimal) Interleave Addressing Sequence (decimal) 00 0, 1, 2, 3 0, 1, 2, , 2, 3, 0 1, 0, 3, , 3, 0, 1 2, 3, 0, , 0, 1, 2 3, 2, 1, 0 (Burst of Eight) Starting Address (column address A2 - A0, binary) Sequential Addressing Sequence (decimal) Interleave Addressing Sequence (decimal) 000 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, , 2, 3, 4, 5, 6, 7, 0 1, 0, 3, 2, 5, 4, 7, , 3, 4, 5, 6, 7, 0, 1 2, 3, 0, 1, 6, 7, 4, , 4, 5, 6, 7, 0, 1,2 3, 2, 1, 0, 7, 6, 5, , 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, , 6,7, 0, 1, 2, 3, 4 5, 4, 7, 6, 1, 0, 3, , 7,0,1,2,3,4,5 6, 7, 4, 5, 2, 3, 0, , 0, 1, 2, 3, 4, 5, 6 7, 6, 5, 4, 3, 2, 1, 0 Full page burst is an extension of the above tables of sequential addressing, with the length being 256 for 4Mx16. Rev.2.0 Page 17

18 6.Address Bits of Bank-Select and Row A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A11 BA1 BA0 ( command) BA1 BA0 Result 0 0 Select command 0 1 Select command 1 0 Select Bank C command 1 1 Select Bank D command Row A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A11 BA1 BA0 ( command) BA1 BA0 Result Bank C Bank D 1 X X All Banks X: Don't care 0 Disables Auto- (End of Burst) 1 Enables Auto - (End of Burst) Co1. A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A11 BA1 BA0 ( strobes) BA1 BA0 Result 0 0 Enables / commands for 0 1 Enables / commands for 1 0 Enables / commands for Bank C 1 1 Enables / commands for Bank D Rev.2.0 Page 18

19 7. The precharge command can be asserted anytime after t (min.) is satisfied. Soon after the precharge command is asserted, the precharge operation is performed and the synchronous DRAM enters the idle state after t RP(min.) is satisfied. The parameter t RP is the time required to perform the precharge. The earliest timing in a read cycle that a precharge command can be asserted without losing any data in the burst is as follows. E Burst lengh=4 T0 T1 T2 T3 T4 T5 T6 T7 latency = 2 PRE Q0 Q1 Q2 Q3 Hi - Z latency = 3 PRE Q0 Q1 Q2 Q3 Hi - Z (t is satisfied) In order to write all data to the memory cell correctly, the asynchronous parameter t DPL must be satisfied. The t DPL(min.) specification defines the earliest time that a precharge command can be asserted. The minimum number of clocks can be calculated by dividing t DPL(min.) with the clock cycle time. In summary, the precharge command can be asserted relative to the reference clock that indicates the last data word is valid. In the following table, minus means clocks before the reference; plus means time after the reference. latency t DPL(min.) t DPL(min.) Rev.2.0 Page 19

20 8.Auto During a read or write command cycle, controls whether auto precharge is selected. If is high in the read or write command ( with Auto precharge command or with Auto precharge command), auto precharge is selected and begins automatically. In the write cycle, t DAL(min.) must be satisfied before asserting the next activate command to the bank being precharged. When using auto precharge in the read cycle, knowing when the precharge starts is important because the next activate command to the bank being precharged cannot be executed until the precharge cycle ends. Once auto precharge has started, an activate command to the bank can be asserted after t RP has been satisfied. A or command without auto - precharge can be terminated in the midst of a burst operation. However, a or command with auto - precharge can not be interrupted by the same bank commands before the entire burst operation is completed. Therefore use of the same bank,, or Burst Stop command is prohibited during a read or write cycle with auto - precharge. It should be noted that the device will not respond to the Auto - command if the device is programmed for full page burst read or write cycles. The timing when the auto precharge cycle begins depends both on both the Iatency programmed into the mode register and whether the cycle is read or write. 8.1 with Auto During a READA cycle, the auto precharge begins one clock earlier (CL = 2) or two clocks earlier (CL = 3) than the last word output. READ with AUTO PRECHARGE Burst lengh = 4 T0 T1 T2 T3 T4 T5 T6 T7 T8 latency = 2 READA B No New to Auto precharge starts QB0 QB1 QB2 QB3 Hi - Z READA B No New to Auto precharge starts latency = 3 QB0 QB1 QB2 QB3 Hi - Z Remark READA means READ with AUTO PRECHARGE Rev.2.0 Page 20

21 8.2 with Auto During a write cycle, the auto precharge starts at the timing that is equal to the value of t DPL(min.) after the last data word input to the device. WRITE with AUTO PRECHRGE Burst lengh = 4 T0 T1 T 2 T3 T4 T5 T6 T7 T8 WRITA B AUTO PRECHARGE starts latency = 2 t DPL DB0 DB1 DB2 DB3 Hi - Z_ WRITA B AUTO PRECHARGE starts latency = 3 t DPL DB0 DB1 DB2 DB3 Hi - Z Remark WRITA means WRITE with AUTO In summary, the auto precharge cycle begins relative to a reference clock that indicates the last data word is valid. In the table below, minus means clocks before the reference; plus means clocks after the reference. latency t DPL(min.) t DPL(min.) Rev.2.0 Page 21

22 9. / Writw Interval 9.1 to Interval During a read cycle when a new read command is asserted, it will be effective after the latency, even if the previous read operation has not completed. READ will be interrupted by another READ. Each read command can be asserted in every clock without any restriction. READ to READ Interval Burst lengh=4, latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 A B QA0 QB0 QB1 QB2 QB3 _ 1 cycle 9.2 to Interval During a write cycle, when a new command is asserted, the previous burst will terminated and the new burst will begin with a new write command. WRITE will be interrupted by another WRITE. Each write command can be asserted in every clock without any restriction. WRITE to WRITE Interval Burst lengh=4, latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 A B QA0 QB0 QB1 QB2 QB3 _ 1 cycle Rev.2.0 Page 22

23 9.3 to Interval The write command to read command interval is also a minimum of 1 cycle. Only the write data before the read command will be written. The data bus must be at least one cycle prior to the first D OUT. WRITE to READ Interval Burst lengh=4 T0 T1 T2 T3 T4 T5 T6 T7 T8 1 cycle WRITE A B latency=2 DA0 QB0 QB1 QB2 QB3 A B latency=3 DA0 QB0 QB1 QB2 QB3 9.4 to Interval During a read cycle, READ can be interrupted by WRITE. M must be in High at least 3 clocks prior to the write command. There is a restriction to avoid a data conflict. The data bus must be using M before. Rev.2.0 Page 23

24 READ to WRITE Interval latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 M D0 D1 D2 D3 1 cycle Burst length=8, latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 M Q0 Q1 Q2 D0 D1 D2 is necessary example: Burst length=4, latency=3 T0 T1 T2 T3 T4 T5 T6 T7 T8 M Q2 is D0 D1 D2 necessary Rev.2.0 Page 24

25 10.BURST Termination There are two methods to terminate a burst operation other than using a read or a write command. One is the burst stop command and the other is the precharge command BURST Stop During a read burst, when the burst stop command is issued, the burst read data are terminated and the data bus goes to high-impedance after the latency from the burst stop command. During a write burst, when the burst stop command is issued, the burst write data are termained and data bus goes to at the same clock with the burst stop command. Burst Termination Burst lengh=x, Intency=2,3 T0 T1 T2 T3 T4 T5 T6 T7 BST latency=2 Q0 Q1 Q2 latency=3 Q0 Q1 Q2 Remark BST: Burst stop command Burst lengh=x, latency=2,3 T0 T1 T2 T3 T4 T5 T6 T7 BST latency=2,3 Q0 Q0 Q1 Q2 _ Rev.2.0 Page 25

26 10.2 PRECHARGE TERMINATION PRECHARGE TERMINATION in READ Cycle During READ cycle, the burst read operation is terminated by a precharge command. When the precharge command is issued, the burst read operation is terminated and precharge starts. The same bank can be activated again after t RP from the precharge command. When latency is 2, the read data will remain valid until one clock after the precharge command. When latency is 3, the read data will remain valid until two clocks after the precharge command. Termination in READ Cycle Burst lengh= X T0 T1 T2 T3 T4 T5 T6 T7 T8 PRE ACT t RP latency=2 Q0 Q1 Q2 Q3 command PRE ACT latency=3 t RP Q0 Q1 Q2 Q3 Rev.2.0 Page 26

27 Termination in WRITE Cycle During WRITE cycle, the burst write operation is terminated by a precharge command. When the precharge command is issued, the burst write operation is terminated and precharge starts. The same bank can be activated again after t RP from the precharge command. The M must be high to mask invalid data in. During WRITE cycle, the write data written prior to the precharge command will be correctly stored. However, invalid data may be written at the same clock as the precharge command. To prevent this from happening, M must be high at the same clock as the precharge command. This will mask the invalid data. PRECHARGE TERMINATION in WRITE Cycle Burst lengh = X T0 T1 T2 T3 T4 T5 T6 T7 T8 PRE ACT latency = 2 M D0 D1 D2 D3 D4 Hi - Z t RP command PRE ACT latency = 3 M D0 D1 D2 D3 D4 Hi - Z t RP Rev.2.0 Page 27

28 Timing Diagram Rev.2.0 Page 28

29 Mode Register Set T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 t RSC BS0,1 Address Key M t RP All Banks Mode Register Set Rev.2.0 Page 29

30 AC Parameters for Timing (1 of 2) Burst Length=4, Latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CH t CL t CK2 t CKS t CMS Begin Auto Begin Auto t CKH t CMH t AS t AH M t RCD t RRD t DAL t DS t RC t t DPL t RP DH QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QBa2 QBa3 QAb0 QAb1 QAb2 QAb3 with Auto with Auto without Auto Rev.2.0 Page 30

31 AC Parameters for Timing (2 of 2) Burst Length=4, Latency=3,4 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 T23 t CH t CL t CK3 t CKS t CMS Begin Auto Begin Auto t CKH t CMH t AS t AH M t RCD t RRD t DAL t DS RC t DPL t RP t DH QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QBa2 QBa3 QAb0 QAb1 QAb2 QAb3 with Auto with Auto without Auto Rev.2.0 Page 31

32 AC Parameters for Timing (1 of 2) Burst Length=2, Latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 t CH t CL t CK2 t CKS t CMS t CMH Begin Auto t CKH t AH t AS t RRD t t RC M t AC2 t AC2 t RCD t LZ t OH toh t HZ t HZ t RP QAa0 QAa1 QBa0 QBa1 with Auto Rev.2.0 Page 32

33 AC Parameters for Timing (2 of 2) Burst Length=2, Latency=3 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 t CH t CL t CK3 t CKS t CMS t CMH Begin Auto t CKH t AH t AS t RRD t t RP M t RC t AC3 t AC3 t RCD t t LZ OH t HZ t OH t HZ QAa0 QAa1 QBa0 QBa1 with Auto Rev.2.0 Page 33

34 Power on Sequence and Auto Refresh (CBR) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 High level is required Minimum of 8 Refresh Cycles are required t RSC BS0, 1 Address Key M High Level is Necessary t RP t RC Inputs must All Banks be stable for 200us 1st Auto Refresh 2nd Auto Refresh Mode Register Set Rev.2.0 Page 34

35 Clock Suspension During Burst (Using ) (1 of 2) Burst Length=4, Latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK2 RAa RAa CAa M t HZ QAa0 QAa1 QAa2 QAa3 Clock Suspended 1 Cycle Clock Suspended 2 Cycles Clock Suspended 3 Cycles Rev.2.0 Page 35

36 Clock Suspension During Burst (Using ) (2 of 2) Burst Length=4, Latency=3 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK3 RAa RAa CAa M t HZ QAa0 QAa1 QAa2 QAa3 Clock Suspended 1 Cycles Clock Suspended 2 Cycles Clock Suspended 3 Cycles Rev.2.0 Page 36

37 Clock Suspension During Burst (Using ) (1 of 2) Burst Length=4, Latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK2 RAa RAa CAa M DAa0 DAa1 DAa2 DAa3 Clock Suspended 1 Cycle Clock Suspended 2 Cycles Clock Suspended 3 Cycles Rev.2.0 Page 37

38 Clock Suspension During Burst (Using ) (2 of 2) Burst Length=4, Latency=3 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK3 RAa RAa CAa M DAa0 DAa1 DAa2 DAa3 Clock Suspended 1 Cycle Clock Suspended 2 Cycles Clock Suspended 3 Cycles Rev.2.0 Page 38

39 Power Down Mode and Clock Mask Burst Length=4, Latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK2 t CKS t CKH t CKS VALID RAa RAa CAa M QAa0 QAa1 QAa2 QAa3 ACTIVE STANDBY Power Down Mode Entry Power Down Mode Exit Clock Mask Start Clock Mask End Power Down Mode Entry Standby Power Down Mode Exit Rev.2.0 Page 39

40 Auto Refresh (CBR) Burst Length=4, Latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK2, 1 RAa RAa CAa M t RP t RC t RC Q0 Q1 Q2 Q3 All Banks CBR Refresh CBR Refresh Rev.2.0 Page 40

41 Self Refresh (Entry and Exit) can be Stopped** T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t SRX t SRX t CKS t CKS M t RC t RC All Banks must be idle Self refresh Entry Self Refresh Exit Self Refresh Entry Self Refresh Exit * Clock can be stopped at =Low. If clock is stopped, it must be restarted/stable for 4 clock cycles before =High Rev.2.0 Page 41

42 ndom Column (Page With Same Bank) (1 of 2) Burst Length=4, Latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK2 RAa RAa RAd RAa CAa CAb CAc RAd CAd M QAa0 QAa1 QAa2 QAa3 QAb0 QAb1 QAc0 QAc1 QAc2 QAc3 QAd0 QAd1 QAd2 QAd3 Rev.2.0 Page 42

43 ndom Column (Page With Same Bank) (2 of 2) Burst Length=4, Latency=3 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK3 RAa RAd RAa CAa CAb CAc RAd CAd M QAa0 QAa1 QAa2 QAa3 QAb0 QAb1 QAc0 QAc1 QAc2 QAc3 Rev.2.0 Page 43

44 ndom Column (Page With Same Bank) (1 of 2) Burst Length=4, Latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK2 Rd Ca Cb Cc Rd Cd M Da0 Da1 Da2 Da3 Db0 Db1 Dc0 Dc1 Dc2 Dc3 Dd0 Dd1 Dd2 Dd3 Rev.2.0 Page 44

45 ndom Column (Page With Same Bank) (1 of 2) Burst Length=4, Latency=3 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK Rd Ca Cb Cc Rd Cd M Da0 Da1 Da2 Da3 Db0 Db1 Dc0 Dc1 Dc2 Dc3 Dd0 Dd1 Rev.2.0 Page 45

46 ndom Row (Interleaving Banks) (1 of 2) Burst Length=8, Latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK2 High M t RCD t AC2 t RP QBa0 QBa1 QBa2 QBa3 QBa4 QBa5 QBa6 QBa7 QAa0 QAa1 QAa2 QAa3 QAa4 QAa5 QAa6 QAa7 QBb0 QBb1 Active Rev.2.0 Page 46

47 ndom Row (Interleaving Banks) (2 of 2) Burs tlength=8, Latency=3 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK3 High M t RCD t AC3 t RP QBa0 QBa1 QBa2 QBa3 QBa4 QBa5 QBa6 QBa7 QAa0 QAa1 QAa2 QAa3 QAa4 QAa5 QAa6 QAa7 QBb0 Rev.2.0 Page 47

48 ndom Row (Interleaving Banks) (1 of 2) Burst Length=8, Latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK2 High M t RCD t DPL t RP QAa0 QAa1 QAa2 QAa3 QAa4 QAa5 QAa6 QAa7 QBa0 QBa1 QBa2 QBa3 QBa4 QBa5 QBa6 QBa7 QAb0 QAb1 QAb2 QAb3 QAb4 Active Rev.2.0 Page 48

49 ndom Row (Interleaving Banks) (2 of 2) Burst Length=8, Latency=3 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK High RBa M t DPL t RP t DPL QAa0 QAa1 QAa2 QAa3 QAa4 QAa5 QAa6 QAa7 QBa0 QBa1 QBa2 QBa3 QBa4 QBa5 QBa6 QBb7 QAb0 QAb1 QAb2 QAb3 Rev.2.0 Page 49

50 and Cycle (1 of 2) Burst Length=4, Latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK2 RAa RAa CAa CAb CAc M QAa0 QAa1 QAa2 QAa3 DAb0 DAb1 DAb3 QAc0 QAc1 QAc3 The Data is Masked with a Zero Clock latency The Data is Masked with Two Clocks Latency Rev.2.0 Page 50

51 and Cycle (2 of 2) Burst Length=4, Latency=3 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK3 RAa RAa CAa CAb CAc M QAa0 QAa1 QAa2 QAa3 DAb0 DAb1 DAb3 QAc0 QAc1 QAc3 The Data is Masked with a Zero Clock Latency The Data is Masked with Two Clock Latency Rev.2.0 Page 51

52 Interleaved Column Cycle (1 of 2) Burst Length=4, Latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK2 Cb Ca Cb Cc Cb Cd M t RCD t AC2 QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QBb0 QBb1 QBc0 QBc1 QAb0 QAb1 QBd0 QBd1 QBd2 QBd3 Rev.2.0 Page 52

53 Interleaved Column Cycle (2 of 2) Burst Length=4, Latency=3 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK3 Ca Ca Cb Cc Cb M t RCD t RRD tac3 QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QBb0 QBb1 QBc0 QBc1 QAb0 QAb1 QAb2 QAb3 Rev.2.0 Page 53

54 Interleaved Column Cycle (1 of 2) Burst Length=4, Latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK2 Ca Ca Cb Cc Cb Cb M t RCD t RP t DPL t RRD DAa0 DAa1 DAa2 DAa3 DBa0 DBa1 DBb0 DBb1 DBc0 DBc1 DAb0 DAb1 DBd0 DBd1 DBd2 DBd3 Rev.2.0 Page 54

55 Interleaved Column Cycle (2 of 2) Burst Length=4, Latency=3 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK3 Ca Ca Cb Cc Cb Cd M t RCD t DPL t DPL t RRD t RP QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QBb0 QBb1 QBc0 QBc1 QAb0 QAb1 QBd0 QBd1 QBd2 QBd3 Rev.2.0 Page 55

56 Auto after Burst (1 of 2) Burst Length=4, Latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK2 High Start Auto Start Auto Start Auto Rb Rc Ca Ca Cb Rb Cb Rc Cc M QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QBa2 QBa3 QAb0 QAb1 QAb2 QAb3 QBb0 QBb1 QBb2 QBb3 QAc0 QAc1 QAc2 with Auto with Auto with Auto with Auto Rev.2.0 Page 56

57 Auto after Burst (2 of 2) Burst Length=4, Latency=3 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK3 High Start Auto Start Auto Start Auto Rb Ca Ca Cb Rb RBb Cb M QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QBa2 QBa3 QAb0 QAb1 QAb2 QAb3 QBb0 QBb1 QBb2 with Auto with Auto with Auto precharge Rev.2.0 Page 57

58 Auto after Burst (1 of 2) Burst Length=4, Latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK2 High Start Auto Start Auto Start Auto Rb Rc Ca Ca Cb Rb Cb Rc Cc M QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QBa2 QBa3 QAb0 QAb1 QAb2 QAb3 QBb0 QBb1 QBb2 QBb3 QAc0 QAc1 QAc2 QAc3 with Auto with Auto with Auto with Auto Start Auto Rev.2.0 Page 58

59 Auto after Burst (2 of 2) Burst Length=4, Latency=3 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK3 High Start Auto Start Auto Start Auto Rb Ca Ca Cb Rb RBb Cb M QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QBa2 QBa3 QAb0 QAb1 QAb2 QAb3 QBb0 QBb1 QBb2 QBb3 with Auto with Auto with Auto precharge Rev.2.0 Page 59

60 Full Page Cycle (1 of 2) Burst Length=Full Page, Latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK2 High Rb Ca Ca Rb M t RP QAa QAa+1 QAa+2 QAa-2 QAa-1 QAa QAa+1 QBa QBa+1 QBa+2 QBa+3 QBa+4 QBa+51QBa+6 The burst counter wraps from the highest order page address back to zero during this time interval Full page burst operation does not terminate when the burst length is satisfied; the burst counter increments and continues bursting beginning with the starting address Burst Stop Rev.2.0 Page 60

61 Full Page Cycle (2 of 2) Burst Length=Full Page, Latency=3 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK3 High Rb Ca Ca Rb M QAa QAa+1 QAa+2 QAa-2 QAa-1 QAa QAa+1 QBa0 QBa+1 QBa+2 QBa+3 QBa+4 QBa+5 The burst counter wraps from the highest order page address back to zero during this time interval Full page burst operation does not teminate when the burst length is satisfied; the burst counter increments and continues bursting beginning with the starting address Burst Stop Rev.2.0 Page 61

62 Full Page Cycle (1 of 2) Burst Length=Full Page, Latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK2 High Rb Ca Ca Rb M t BDL QAa QAa+1 QAa+2 QAa+3 QAa-1 QAa QAa+1 QBa QBa+1 QBa+2 QBa+3 QBa+4 QBa+5 QBa+6 Com mand The burst counter wraps from the highest order page address back to zero during this time interval Data is ignored Full page burst operation does not terminate when the burst length is satisfied; the burst counter increm ents and continues bursting beginning with the starting address Burst Stop Rev.2.0 Page 62

63 Full Page Cycle (2 of 2) Burst Leng th=full Page, Latency=3 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK3 High Rb Ca Ca Rb M t BDL Data is ignored. DAa DAa+1 DAa+2 DAa+3 DAa-1 DAa DAa+1 DBa DBa+1 DBa+2 DBa+3 DBa+4 DBa+5 Com mand The burst counter wraps from the highest order page address back to zero during this tim e interval Com mand Full page burst operation does not terminate when the burst length is satisfied; the burst counter increments and continues bursting beginning with the starting address Burst Stop Rev.2.0 Page 63

64 Burst and Single Operation Burst Length=4, Latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK2 High RAa RAa CAa CAb CAc CAd CAe M Single Single s are masked Single s are masked Rev.2.0 Page 64

65 Full Page ndom Column Burst Length=Full Page, Latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK2 BS Rb Ca Ca Cb Cb Cc Cc Rb t RP M QAa0 QBa0 QAb0 QAb1 QBb0 QBb1 QAc0 QAc1 QAc2 QBc0 QBc1 QBc2 (Bank D) ( Termination) Rev.2.0 Page 65

66 Full Page ndom Column Burst Length=Full Page, Latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK2 Rb Ca Ca Cb Cb Cc Cc Rb t RP M QAa0 QBa0 QAb0 QAb1 QBb0 QBb1 QAc0 QAc1 QAc2 QBc0 QBc1 QBc2 (Bank D) ( Termination) Data is masked Rev.2.0 Page 66

67 Termination of a Burst (1 of 2) Burst Length=8, Latency=2 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK2 High RAa RAb RAc RAa CAa RAb CAb RAc CAc t DPL t RP t RP t RP M QAa0 QAa1 QAa2 Da3 QAb0 QAb1 QAb2 QAc0 QAc1 QAc2 Termination of a Burst. data is masked. Termination of a Burst. Rev.2.0 Page 67

68 Termination of a Burst (2 of 2) Burst Length=8, Latency=3 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK3 High RAa RAb RAc RAa CAa RAb CAb RAc t DPL t RP t t RP M t RCD DAa0 DAa1 QAb0 QAb1 QAb2 QAb3 Data is masked Termination of a Burst. Termination of a Burst. Rev.2.0 Page 68

69 Ordering information Part Number Cycle time Package - 5.5TC - 6TC - 7TC - 8TC L - 5.5TC L - 6TC L - 7TC L - 8TC 5.5 ns 6 ns 7 ns 8 ns 5.5 ns 6 ns 7 ns 8 ns 400mil, 54-Pin Plastic TSOP GLT L 16 L - 6 TC : DRAM : Synchronous DRAM : Standard SRAM : Cache SRAM : Synchronous Burst SRAM : SGRAM -SRAM 064 : 8K 256 : 256K 512 : 512K 100 : 1M -DRAM 10 : 1M(C/EDO) 11 : 1M(C/FPM) 12 : 1M(H/EDO) 13 : 1M(H/FPM) 20 : 2M(EDO) 21 : 2M(FPM) 40 : 4M(EDO) 41 : 4M(FPM) 80 : 8M(EDO) 81 : 8M(FPM) 160 : 16M(EDO) 161 : 16M(FPM) 640 : 64M(EDO) 641 : 64M(FPM) -SDRAM 40 : 4M 160 : 16M 640 : 64M CONFIG. 04 : x04 08 : x08 16 : x16 32 : x32 VOLTAGE Blank : 5V L : 3.3V M : 2.5V N : 2.1V POR Blank : Standard L : Low Power LL : Low Low Power SL : Super Low Power SPEED PACKAGE -SRAM T : PDIP(300mil) 12 : 12ns TS : TSOP(Type I) 15 : 15ns ST : stsop(type I) 20 : 20ns TC : TSOPll (40/44) 70 : 70ns TD : TSOPII (44/50) PL : PLCC -DRAM FA : 300mil SOP 30 : 30ns FB : 330mil SOP 35 : 35ns FC : 445mil SOP 40 : 40ns J3 : 300mil SOJ 45 : 45ns J4 : 400mil SOJ 50 : 50ns P : PDIP(600mil) 60 : 60ns Q : PQFP SDRAM : TQ : TQFP 5 : 5ns/200 MHZ FG : 48Pin BGA 9x : 5.5ns/182 MHZ FH : 48Pin BGA 8x10 6 : 7ns/166 MHZ FI : 48Pin BGA 6x8 7 : 8ns/125 MHZ 10 : 10ns/100 MHZ Temperature nge E : Extended Temperature I : Industrial Temperature Blank : Commercial Temperature Rev.2.0 Page 69

70 Packaging Information 400mil, 54-Pin Plastic TSOP DIM A A1 A2 b b1 MILLIMETERS MIN. MAX NOM c c D ZD e REF BASIC E E L R R1 MIN INCHES NOM REF BASIC MAX D E1 RAD R1 RAD R A2 B c B A1 L 0 X~8 X DETAIL A b b1 SECTION B-B c1 c BASE METAL WITH PLATING NOTE: 1. CONTROLLING DIMENSION : MILLIMETERS 2. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. MOLD PROTRUSION SHALL NOT EXCEED 0.15mm(0.006") PER SIDE. DIMENSION E1 DOES NOT INCLUDE INTERLEAD PROTRUSION. INTERLEAD PROTRUSION SHALL NOT EXCEED 0.25mm(0.01") PER SIDE. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSIONS/INTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL NOT CAUSE THE LEAD TO BE WIDER THAN THE MAX b DIMENSION BY MORE THAN 0.13mm. DAMBAR INTRUSION SHALL NOT CAUSE THE LEAD TO BE NARROR THAN THE MIN b DIMENSION BY MORE THAN 0.07mm. b ZD e 0.100(0.004") A SEATING PLANE E DETAIL A Rev.2.0 Page 70