EM42BM1684RBA. Revision History. Revision 0.1 (Dec. 2010) - First release. Dec /23

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1 Revision History EM42BM684RBA Revision. (Dec. 2) - First release. Dec. 2 /23

2 EM42BM684RBA 52Mb (8M 4Bank 6) Double DATA RATE SDRAM Features Internal Double-Date-Rate architecture with 2 Accesses per clock cycle. VDD/VDDQ= 2.5V ±.2V 2.5V SSTL-2 compatible I/O Burst Length (B/L) of 2, 4, 8 2.5,3 Clock read latency Bi- directional, intermittent data strobe (DQS) All inputs except data and DM are sampled at the positive edge of the system clock. Data Mask (DM) for write data Sequential & Interleaved Burst type available Auto Precharge option for each burst accesses DQS edge-aligned with data for Read cycles DQS center-aligned with data for Write cycles DLL aligns DQ/DQS transitions with CLK transition Auto Refresh and Self Refresh 8,92 Refresh Cycles / 64ms Description The EM42BM684RBA is high speed Synchronous graphic RAM fabricated with ultra high performance CMOS process containing 536,87,92 bits which organized as 8Meg words x 4 banks by 6 bits. The 52Mb DDR SDRAM uses double data rate architecture to accomplish high-speed operation. The data path internally pre-fetches multiple bits and It transfers the data for both rising and falling edges of the system clock. It means the doubled data bandwidth can be achieved at the I/O pins. Available packages: FBGA 6ball. Ordering Information Part No Organization Max. Freq Package Grade Pb EM42BM684RBA-6F 32M X 6 FBGA-6 Commercial Free EM42BM684RBA-5F 32M X 6 FBGA-6 Commercial Free EM42BM684RBA-6FE 32M X 6 FBGA-6 Extended Free EM42BM684RBA-5FE 32M X 6 FBGA-6 Extended Free Dec. 2 2/23

3 EM42BM684RBA Parts Naming Rule * EOREX reserves the right to change products or specification without notice. Dec. 2 3/23

4 EM42BM684RBA Pin Assignment VSSQ DQ5 VSS A VDD DQ VDDQ DQ4 VDDQ DQ3 B DQ2 VSSQ DQ DQ2 VSSQ DQ C DQ4 VDDQ DQ3 DQ VDDQ DQ9 D DQ6 VSSQ DQ5 DQ8 VSSQ UDQS E LDQS VDDQ DQ7 VREF VSS UDM F LDM VDD NC CK /CK G /WE /CAS A2 CKE H /RAS /CS A A9 J BA BA A8 A7 K A A/AP A6 A5 L A2 A A4 VSS M VDD A3 6ball FBGA Dec. 2 4/23

5 EM42BM684RBA Pin Description (Simplified) Pin Name Function G2, G3 CLK,/CLK (System Clock) Clock input active on the Positive rising edge except for DQ and DM are active on both edge of the DQS. CLK and /CLK are differential clock inputs. H8 H3 /CS CKE (Chip Select) /CS enables the command decoder when L and disable the command decoder when H. The new commands are over- Looked when the command decoder is disabled but previous operation will still continue. (Clock Enable) Activates the CLK when H and deactivates when L. When deactivate the clock, CKE low signifies the power down or self refresh mode. K7,L8,L7,M8,M2,L3, L2,K3,K2,J3,K8,J2,H2 A~A2 J8, J7 BA, BA (Address) Row address (A to A2) and Column address (CA to CA9) are multiplexed on the same pin. CA defines auto precharge at Column address. (Bank Address) Selects which bank is to be active. H7 G8 G7 /RAS /CAS /WE (Row Address Strobe) Latches Row Addresses on the positive rising edge of the CLK with /RAS L. Enables row access & pre-charge. (Column Address Strobe) Latches Column Addresses on the positive rising edge of the CLK with /CAS low. Enables column access. (Write Enable) Latches Column Addresses on the positive rising edge of the CLK with /CAS low. Enables column access. E7, E3 LDQS/UDQS F7, F3 LDM/UDM A8,B9,B7,C9,C7, D9,D7,E9,E,D3, DQ~DQ5 D,C3,C,B3,B,A2 A7,F8,M7/A3,F2,M3 A9,B2,C8,D2,E8/ A,B8,C2,D8,E2 F9 F VDD/VSS VDDQ/VSSQ NC/RFU VREF (Data Input/Output) Data Inputs and Outputs are synchronized with both edges of DQS. (Data Input/Output Mask) DM controls data inputs. LDM corresponds to the data on DQ~DQ7.UDM corresponds to the data on DQ8~DQ5. (Data Input/Output) Data inputs and outputs are multiplexed on the same pin. (Power Supply/Ground) VDD and VSS are power supply pins for internal circuits. (Power Supply/Ground) VDDQ and VSSQ are power supply pins for the output buffers. (No Connection/Reserved for Future Use) This pin is recommended to be left No Connection on the device. (Input) SSTL-2 Reference voltage for input buffer. Dec. 2 5/23

6 EM42BM684RBA Absolute Maximum Rating Symbol Item Rating Units VIN, VOUT Input, Output Voltage - ~ +3.6 V VDD, VDDQ Power Supply Voltage - ~ +3.6 V TOP Operating Temperature Range Commercial ~ +7 Extended -25 ~ +85 C TSTG Storage Temperature Range -55 ~ +5 C PD Power Dissipation.6 W IOS Short Circuit Current 5 ma Note: Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Capacitance (VCC=2.5V, f=mhz, TA=25 C) Symbol Parameter Min. Typ. Max. Units CCLK Clock Capacitance(CLK,/CLK) 2-3 pf CI Input Capacitance for CKE, Address, /CS, /RAS, /CAS, /WE 2-3 pf CO DM,Data&DQS Input/Output Capacitance 4-5 pf Recommended DC Operating Conditions (TA=- C ~+7 C) Symbol Parameter Min. Typ. Max. Units Note VDD Power Supply Voltage V VDDQ Power Supply Voltage (for I/O Buffer) V VREF I/O Reference Voltage.49 VDDQ -.5 VDDQ V VTT I/O Termination Voltage VREF-.4 - VREF+.4 V VIH Input Logic High Voltage VREF+.5 - VDDQ+.3 V VIL Input Logic Low Voltage VREF-.5 V Dec. 2 6/23

7 EM42BM684RBA Recommended DC Operating Conditions (VDD=2.5V±.2V, TA= C ~ 7 C) Symbol Parameter Test Conditions Max Units IDD Operating Current (Note ) Burst length=2, trc trc(min.), IOL=mA, One bank active 2 8 ma IDD2P Precharge Standby Current Power Down Mode CKE VIL(max.), tck=min ma IDD2N Precharge Standby Current (All banks idle) CKE VIL(min.), tck=min, /CS VIH(min.) Input signals are changed once per clock cycle 5 45 ma IDD3P Active Standby Current (Power Down Mode) CKE VIL(max.), tck=min 3 25 ma IDD3N Active Standby Current (Non-power Down Mode) CKE VIH(min.), tck=min, /CS VIH(min.) Input signals are changed once per clock cycle 6 5 ma IDD4 Operating Current (Burst Mode) (Note 2) tck tck(min.), IOL=mA, READ 85 All banks active WRITE 85 ma IDD5 Refresh Current (Note 3) trc trfc (min.), All banks active 5 3 ma IDD6 Self Refresh Current CKE.2V 5 5 ma *All voltages referenced to VSS. Note : IDD depends on output loading and cycle rates. Specified values are obtained with the output open. Input signals are changed only one time during tck (min.) Note 2: IDD4 depends on output loading and cycle rates. Specified values are obtained with the output open. Input signals are changed only one time during tck (min.) Note 3: Min. of trfc (Auto refresh Row Cycle Times) is shown at AC Characteristics. Dec. 2 7/23

8 Recommended DC Operating Conditions (Continued) EM42BM684RBA Symbol Parameter Test Conditions Min. Max. Units IIL Input Leakage Current VI VDDQ, VDDQ=VDD All other pins not under test=v ua IOL Output Leakage Current VO VDDQ, DOUT is disabled ua VOH High Level Output Voltage IO=-6.8mA.95 - V VOL Low Level Output Voltage IO=+6.8mA -.35 V Dec. 2 8/23

9 EM42BM684RBA Block Diagram DM Auto/Self Refresh Counter A DQM Control CLK, /CLK A A2 A3 A4 A5 A6 A7 A8 A9 A A A2 Address Register Row Add. Buffer Row Decoder Memory Array S/ A & I/ O Gating Col. Decoder CLK, /CLK DQS Generator Driver Write FIFO DLL BA BA Col. Add. Buffer Receiver Data In Data Out Mode Register Set Col Add. Counter Burst Counter DIO Timing Register DQS /CLK CLK CKE /CS / RAS / CAS /WE DM DQS Dec. 2 9/23

10 EM42BM684RBA AC Operating Test Conditions (VDD=2.5V±.2V, TA= C ~7 C) AC Operating Test Characteristics (VDD=2.5V±.2V, TA= C ~7 C) Symbol -5-6 Parameter Units Min. Max. Min. Max. t DQCK DQ output access from CLK,/CLK ns t DQSCK DQS output access from CLK,/CLK ns t CL,t CH CL low/high level width t CK t CK Clock Cycle Time CL= CL= t DH,t DS DQ and DM hold/setup time ns t DIPW t HZ,t LZ t DQSQ t DQSS DQ and DM input pulse width for each input Data out high/low impedance time from CLK,/CLK DQS-DQ skew for associated DQ signal Write command to first latching DQS transition ns ns ns ns t CK t DSL,t DSH DQS input valid window t CK t MRD Mode Register Set command cycle time t CK t WPRES Write Preamble setup time - - ns t WPRE Write Preamble t CK t WPST Write Postamble t CK t IH,t IS Address/control input hold/setup time (fast slew rate) ns t RPRE Read Preamble.9. t CK Dec. 2 /23

11 EM42BM684RBA AC Operating Test Characteristics (Continued) (VDD=2.5V±.2V, TA= C ~7 C) Symbol Parameter -5-6 Min. Max. Min. Max. Units trpst Read Postamble tck tras trc trfc trcd trp Active to Precharge command period Active to Active command period Auto Refresh Row Cycle Time Active to Read or Write delay Precharge command period 4 7k 42 7k ns ns ns ns ns twr Write recover time ns trrd tipw trap Active bank A to B command period Control & Address Input width Active to READ with Auto Precharge command ns ns ns trpre DQS read preamble tck twtr Internal write to read command delay tck txsnr Exit self Refresh to non-read command ns txsrd Exit self Refresh to read command tck trefi Average periodic refresh interval us Dec. 2 /23

12 EM42BM684RBA Simplified State Diagram Dec. 2 2/23

13 . Command Truth Table Command Symbol CKE n- N /CS /RAS /CAS /WE BA, BA EM42BM684RBA A A2~A Ignore Command DESL H X H X X X X X X No Operation NOP H X L H H H X X X Burst Stop BSTH H X L H H L X X X Read READ H X L H L H V L V Read with Auto Pre-charge READA H X L H L H V H V Write WRIT H X L H L L V L V Write with Auto Pre-charge WRITA H X L H L L V H V Bank Activate ACT H X L L H H V V V Pre-charge Select Bank PRE H X L L H L V L X Pre-charge All Banks PALL H X L L H L X H X Mode Register Set MRS H X L L L L OP Code Extended MRS EMRS H X L L L L OP Code H = High level, L = Low level, X = High or Low level (Don't care), V = Valid data input 2. CKE Truth Table Item Command Symbol CKE n- n /CS /RAS /CAS /WE Addr. Idle CBR Refresh Command REF H H L L L H X Idle Self Refresh Entry SELF H L L L L H X - L H L H H H X Self Refresh Self Refresh Exit - L H H X X X X Idle Power Down Entry - H L X X X X X Power Down Power Down Exit - L H X X X X X H = High level, L = Low level, X = High or Low level (Don't care) Dec. 2 3/23

14 EM42BM684RBA 3. Operative Command Table Current State /CS /R /C /W Addr. Command Action H X X X X DESL NOP L H H H X NOP NOP L H H L X TERM NOP L H L X BA/CA/A READ/WRIT/BW ILLEGAL (Note ) Idle L L H H BA/RA ACT Bank active,latch RA Row Active Read L L H L BA, A PRE/PREA NOP(Note 3) L L L H X REFA Auto refresh(note 4) L L L L Op-Code, Mode-Add MRS Mode register H X X X X DESL NOP L H H H X NOP NOP L H H L BA/CA/A READ/READA Begin read,latch CA, Determine auto-precharge L H L L BA/CA/A WRIT/WRITA Begin write,latch CA, Determine auto-precharge L L H H BA/RA ACT ILLEGAL (Note ) L L H L BA/A PRE/PREA Precharge/Precharge all L L L H X REFA ILLEGAL L L L L Op-Code, Mode-Add MRS ILLEGAL H X X X X DESL NOP(Continue burst to end) L H H H X NOP NOP(Continue burst to end) L H H L X TERM Terminal burst Terminate burst,latch CA, Begin new L H L H BA/CA/A READ/READA read, Determine Auto-precharge Write L L H H BA/RA ACT ILLEGAL (Note ) L L H L BA, A PRE/PREA Terminate burst, PrecharE L L L H X REFA ILLEGAL L L L L Op-Code, Mode-Add MRS ILLEGAL H X X X X DESL NOP(Continue burst to end) L H H H X NOP NOP(Continue burst to end) L H H L X TERM ILLEGAL Terminate burst with DM= H,Latch L H L H BA/CA/A READ/READA CA,Begin read,determine auto-precharge (Note 2) L H L L BA/CA/A WRIT/WRITA Terminate burst,latch CA,Begin new write, Determine auto-precharge (Note 2) L L H H BA/RA ACT ILLEGAL (Note ) L L H L BA, A PRE/PREA Terminate burst with DM= H, Precharge L L L H X REFA ILLEGAL L L L L Op-Code, MRS ILLEGAL Dec. 2 4/23

15 3. Operative Command Table (Continued) Current State Read with AP Write with AP Pre-charging Row Activating /CS /R /C /W Addr. Command Action EM42BM684RBA H X X X X DESL NOP(Continue burst to end) L H H H X NOP NOP(Continue burst to end) L H H L BA/CA/A TERM ILLEGAL L H L X BA/RA READ/WRITE ILLEGAL (Note ) L L H H BA/A ACT ILLEGAL (Note ) L L H L X PRE/PREA ILLEGAL (Note ) L L L H X REFA ILLEGAL L L L L Op-Code, Mode-Add MRS ILLEGAL H X X X X DESL NOP(Continue burst to end) L H H H X NOP NOP(Continue burst to end) L H H L X TERM ILLEGAL L H L X BA/CA/A READ/WRITE ILLEGAL (Note ) L L H H BA/RA ACT ILLEGAL (Note ) L L H L BA/A PRE/PREA ILLEGAL (Note ) L L L H X REFA ILLEGAL L L L L Op-Code, Mode-Add MRS ILLEGAL H X X X X DESL NOP(idle after trp) L H H H X NOP NOP(idle after trp) L H H L X TERM NOP L H L X BA/CA/A READ/WRITE ILLEGAL (Note ) L L H H BA/RA ACT ILLEGAL (Note ) L L H L BA/A PRE/PREA NOP(idle after trp) (Note 3) L L L H X REFA ILLEGAL L L L L Op-Code, Mode-Add MRS ILLEGAL H X X X X DESL NOP(Row active after trcd) L H H H X NOP NOP(Row active after trcd) L H H L X TERM NOP L H L X BA/CA/A READ/WRITE ILLEGAL (Note ) L L H H BA/RA ACT ILLEGAL (Note ) L L H L BA/A PRE/PREA ILLEGAL (Note ) L L L H X REFA ILLEGAL L L L L Op-Code, Mode-Add MRS ILLEGAL H = High level, L = Low level, X = High or Low level (Don't care), AP = Auto Pre-charge Dec. 2 5/23

16 EM42BM684RBA 3. Operative Command Table (Continued) Current State /CS /R /C /W Addr. Command Action H X X X X DESL NOP L H H H X NOP NOP L H H L X TERM NOP L H L H BA/CA/A READ ILLEGAL(Note ) Write L H L L BA/CA/A WRIT/WRITA New write, Determine AP Recovering L L H H BA/RA ACT ILLEGAL (Note ) Refreshing L L H L BA/A PRE/PREA ILLEGAL (Note ) L L L H X REFA ILLEGAL L L L L Op-Code, Mode-Add MRS ILLEGAL H X X X X DESL NOP(idle after trp) L H H H X NOP NOP(idle after trp) L H H L X TERM NOP L H L X BA/CA/A READ/WRIT ILLEGAL L L H H BA/RA ACT ILLEGAL L L H L BA/A PRE/PREA NOP(idle after trp) L L L H X REFA ILLEGAL L L L L Op-Code, Mode-Add MRS ILLEGAL H = High level, L = Low level, X = High or Low level (Don't care), AP = Auto Pre-charge Note : ILLEGAL to bank in specified states; Function may be legal in the bank indicated by Bank Address (BA), depending on the state of that bank. Note 2: Must satisfy bus contention, bus turn around, and/or write recovery requirements. Note 3: NOP to bank precharging or in idle state.may precharge bank indicated by BA. Note 4: ILLEGAL of any bank is not idle. Dec. 2 6/23

17 EM42BM684RBA 4. Command Truth Table for CKE Current State C KE /CS /R /C /W Addr. Action H X X X X X X INVALID L H H X X X X Exist Self-Refresh L H L H H H X Exist Self-Refresh Self Refresh L H L H H L X ILLEGAL L H L H L X X ILLEGAL L H L L X X X ILLEGAL L L X X X X X NOP(Maintain self refresh) H X X X X X X INVALID L H H X X X X Exist Power down Both bank L H L H H H X Exist Power down precharge L H L H H L X ILLEGAL power down L H L H L X X ILLEGAL L H L L X X X ILLEGAL L L X X X X X NOP(Maintain Power down) H H X X X X X Refer to function true table H L H X X X X Enter power down mode(note 3) H L L H H H X Enter power down mode(note 3) H L L H H L X ILLEGAL All Banks H L L H L X X ILLEGAL Idle H L L L H H RA Row active/bank active Any State Other than Listed above H L L L L H X Enter self-refresh(note 3) H L L L L L Op-Code Mode register access H L L L L L Op-Code Special mode register access L X X X X X X Refer to current state H H X X X X X Refer to command truth table H = High level, L = Low level, X = High or Low level (Don't care) Notes : After CKE s low to high transition to exist self refresh mode.and a time of t RC (min) has to be Elapse after CKE s low to high transition to issue a new command. Notes 2: CKE low to high transition is asynchronous as if restarts internal clock. Notes 3: Power down and self refresh can be entered only from the idle state of all banks. Dec. 2 7/23

18 EM42BM684RBA The Sequence of Power-Up and Initialization The following sequence is required for Power-Up and Initialization.. Apply power and attempt to maintain CKE at a low state (all other inputs may be undefined.) - Apply VDD before or at the same time as VDDQ. - Apply VDDQ before or at the same time as VTT & VREF. 2. Start clock and maintain stable condition for a minimum of 2us. 3. The minimum of 2us after stable power and clock (CLK, CLK), apply NOP & take CKE high. 4. Precharge all banks. 5. Issue EMRS to enable DLL. (To issue DLL Enable command, provide Low to A, High to BA and Low to all of the rest address pins, A~A2 and BA) 6. Issue a mode register set command for DLL reset. The additional 2 cycles of clock input is required to lock the DLL. (To issue DLL reset command, provide High to A8 and Low to BA) 7. Issue precharge commands for all banks of the device. 8. Issue 2 or more auto-refresh commands. 9. Issue a mode register set command to initialize device operation. Note Every DLL enable command resets DLL. Therefore sequence 6 can be skipped during power up. Instead of it, the additional 2 cycles of clock input is required to lock the DLL after enabling DLL. Dec. 2 8/23

19 EM42BM684RBA Mode Register Definition Mode Register Set The mode register stores the data for controlling the various operating modes of DDR SDRAM which contains addressing mode, burst length, /CAS latency, test mode, DLL reset and various vendor's specific opinions. The defaults value of the register is not defined, so the mode register must be written after EMRS setting for proper DDR SDRAM operation. The mode register is written by asserting low on /CS, /RAS, /CAS, /WE and BA ( The DDR SDRAM should be in all bank precharge with CKE already high prior to writing into the mode register. ) The state of the address pins A-A2 in the same cycle as /CS, /RAS, /CAS, /WE and BA going low is written in the mode register. Two clock cycles are requested to complete the write operation in the mode register. The mode register contents can be changed using the same command and clock cycle requirements during operating as long as all banks are in the idle state. The mode register is divided into various fields depending on functionality. The burst length uses A-A2, addressing mode uses A3, /CAS latency (read latency from column address) uses A4-A6. A7 is used for test mode. A8 is used for DDR reset. A7 must be set to low for normal MRS operation. Dec. 2 9/23

20 EM42BM684RBA Address input for Mode Register Set BA BA A2 A A A9 A8 A7 A6 A5 A4 A3 A2 A A MRS RFU* DLL TM CAS Latency BT Bust Length *RFU: Reserved for Future Use An ~ A BA DLL Rest A8 Mode A7 Burst Type A3 MRS cycle No Normal Sequential EMRS Yes Test Interleave CAS Latency Reserve Reserve Reserve 3 Reserve Reserve 2.5 Reserve A6 A5 A4 Burst Latency Reserve Reserve Reserve Reserve Reserve A2 A A Dec. 2 2/23

21 EM42BM684RBA Burst Type (A3) Burst Length A2 A A Sequential Addressing Interleave Addressing 2 X X X X X X X X *Page length is a function of I/O organization and column addressing DLL Enable / Disable The DLL must be enabled for normal operation. DLL enable is required during power-up initialization and upon returning to normal operation after having disable the DLL for the purpose of debug or evaluation ( upon existing Self Refresh Mode, the DLL is enable automatically. ) Any time the DLL is enabled, 2 clock cycles must occur before a READ command can be issued. Output Drive Strength The normal drive strength got all outputs is specified to be SSTL-2, Class II. Some vendors might also support a weak drive strength option, intended for lighter load and/or point to point environments. Dec. 2 2/23

22 EM42BM684RBA Extended Mode Register Set ( EMRS ) The Extended mode register stores the data enabling or disabling DLL. The value of the extended mode register is not defined, so the extended mode register must be written after power up for enabling or disabling DLL. The extended mode register is written by asserting low on /CS, /RAS, /CAS, /WE and high on BA ( The DDR SDRAM should be in all bank precharge with CKE already prior to writing into the extended mode register. ) The state of address pins A-A and BA in the same cycle as /CS, /RAS, /CAS, and /WE going low is written in the extended mode register. The mode register contents can be changed using the same command and clock cycle requirements during operation as long as all banks are in the idle state. A is used for DLL enable or disable. High on BA is used for EMRS. All the other address pins except A and BA must be set to low for proper EMRS operation. BA BA A2 A A A9 A8 A7 A6 A5 A4 A3 A2 A A MRS RFU* I/O DLL *RFU: Reserved for Future Use Must be set to An ~ A BA I/O Strength A DLL Enable A MRS cycle Full Enable EMRS Half Disable Dec. 2 22/23

23 EM42BM684RBA Package Description Dec. 2 23/23

EM48AM3284LBB. Revision History. Revision 0.1 (May. 2010) - First release.

EM48AM3284LBB. Revision History. Revision 0.1 (May. 2010) - First release. Revision History Revision 0.1 (May. 2010) - First release. Revision 0.2 (Sep. 2010) - Delete CL=2 parameters - Input Leakage Current = -2μA ~ +2μA - Change Supply Voltage Rating = -0.5 ~ +2.3 - Delete