Graphene based devices: Filippo Giubileo, CNR-SPIN Istituto superconduttori, materiali innovativi e dispositivi
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1 Graphene based devices: Fabrication and Characterization Filippo Giubileo, CNR-SPIN Istituto superconduttori, materiali innovativi e dispositivi
2 Outline: Research Group / Laboratory Research activities Results Perspectives 2
3 Other Groups/Activities in Salerno MUSA Laboratory: Multifunctional Material Synthesis and Analysis Transport properties in Superconductors 3
4 MUSA Laboratory: Multifunctional Material Synthesis and Analysis People: Antonio Vecchione CNR SPIN Rosalba Fittipaldi, Alberto Ubaldini CNR SPIN Veronica Granata, Anita Guarino, Luisa Rocco UniSa Analysis and Characterization Single Crystals Growth Ba 2 CuGe 2 O 7 a potential canditate for skyrmion lattice SrFeO 3 a potential canditate for quantum transport phenomena and spintronic Sr 2 RuO 4 : spin triplet superconductor Sr 3 Ru 2 O 7 : anisotropic metamagnet Sr 4 Ru 3 O 10 : ferro-metamagnet X-ray reflectivity map Compositional map Pole figure Morphology, composition and micro-transport 4
5 Transport properties in Superconductors People: Gaia Grimaldi CNR SPIN Angela Nigro UniSa Antonio Leo UniSa Anita Guarino UniSa Fabrication Sistema di deposizione: sputtering dc heater up to 850 C automatic sputtering control Characterization cryogen free magnet system magnetic field: 0-9 T temperature range: 1.6 K 300 K pulse mode: 0-10 Ampere Nd 2-x Ce x CuO < x < 0.19 δ 0,02 4+δ 15mm Nd 1.85 Ce 0.15 CuO 4+d target Argon Oxygen atmosphere SrTiO3 substrate Nd 2-x Ce x CuO 4±δ thin film Fe(Se x Te 1-x ) bulk Fe(Se x Te 1-x ) single crystal 5
6 The Research Group People Antonio Di Bartolomeo Filippo Giubileo Laura Iemmo Chiara Sacco Collaborations within DF Theorists: Roberta Citro Francesco Romeo EBL: Giovanni Carapella Paolo Sabatino Collaborations Università dell Aquila, IT IHP Microelectronics, DE Georgetown University, USA Institut des NanoSciences de Paris, FR 6
7 The Laboratory Semiconductor parameter analyzer (3 units 0,1m V - 200V; 100 fa- 100 ma HV Cryogenic (5K-475K) probe-station with 4 probes Sputtering coater UHV AFM/STM PCAR Spectroscopy 7
8 Activities Field Emission Devices Single CNT Vertically aligned MWCNT Graphene 8
9 Activities GFETs Characterization The problem of Contact resistance at metal/graphene interface Nb for contacting graphene Anomalies in GFETs transconductance 9
10 Activities PCAR Spectroscopy Symmetry of the OP Interface phenomena at N/S, F/S LaO 0.5 F 0.5 BiS 2 10
11 Graphene as field-emitter Motivation Fowler Nordheim Tunneling FN plot I ln 1 2 E E ln I α 1 E E β No current up to 800V/µm from flat surface 11
12 Graphene as field-emitter Contacting graphene 12
13 Graphene as field-emitter 13
14 Graphene as field-emitter FE current from the inner, flat part of single- and fewlayer graphene for E on 600V/µm 14
15 GFETs Progettazione e realizzazione delle geometrie Dispositivo finale Au Nb graphene Laboratorio EBL 15 SiO 2 Si
16 Caratterizzazione dei GFETs Caratteristica di output Transconduttanza n p Dirac point V GS is in the range 0V to -70V 16
17 Modeling device total resistance (*) L R = R + R = R + C ch C W n V n ( V V ) = c 1 V ( ) qµ GS Dirac 2 ( V V ) 2 ox GS Dirac + GS Dirac q n 0 Carrier concentration Induced concentration Intrinsic concentration Fit parameters: Contact resistance: R C =5.7kΩ Carrier mobility: µ 4000 cm 2 V -1 s -1 (*) A.Venugopal et al., Solid State Comunication 152, 15 (2012) 17 Intrinsic concentration: n 0 = cm -2
18 Graphene/Metal Contact Resistance Transfer Length Method (TLM) R R = R C + R ch L dx = ρ C + Rsh W1 d1 W2d 2 W + ( W W ) x / L R eff = ρ C + R sh 1 W1d W d ln W ( W2 W1 ) L 2 W 1 dove R eff = 1 R W1d W d A. Di Bartolomeo, F. Giubileo, F. Romeo, et al., Diamond & Related Materials, 38, (2013) 18
19 Graphene/Metal Contact Resistance 19
20 20
21 Anomalies in GFETs (4) (5) (8) (6) (7) (1) (3) (2) 21
22 Current and future activities Optimization of fabrication process to realize geometrically controlled graphene structures via EBL and RIE Low temperature characterization of Nb/graphene interface Study of proximity effect in graphene New fuctionalities in GFETs via all-electric carrier focalization Effect of local and/or non-uniform gating on GFETs 22
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