Nano devices for single photon source and qubit
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1 Nano devices for single photon source and qubit,
2 Acknowledgement K. Gloos, P. Utko, P. Lindelof Niels Bohr Institute, Denmark J. Toppari, K. Hansen, S. Paraoanu, J. Pekola University of Jyvaskyla, Finland Pil-Sun Na, Joon-Sung Lee KRISS Soo-Hyun Park, Myung-Hwa Jung KBSI Hey-Mi So, Ju-Jin Kim Chonbuk National University
3 Outline Part I. Solid state source of single photon 1. Acousto-electric single photon source: 2DEG 2. Future plan with nanotube and nanowire Part II. Qubit 1. Superconducting qubit 2. Future plan: qubit with CNT and molecules
4 Part I. Solid state source of single photon
5 Single Photon Source [Ref. I. Abram, CNRS, France ]
6 Single photon sources (so far reported) spatial 2. coh. Intensity temperature Parametric downconversion good /s (10 mw) room Atomic micro-maser good (0.17) K NC diamond color center bad /s room Single molecules bad /s room Turnstile device bad /s 50 mk Quantum dots bad < /s 5 K Ref. Michael M. Petersen (NBI)
7 Single-photon turnstile device [Kim et. al., Semicond. Sci. Tech., 13, 8A, Stanford, 1998] Simultaneous Coulomb blockade for electrons and holes in a p-n junction
8 Semiconductor quantum dots [Yuan et. al., Science, 295, Cambridge, 2002] p-i-n diode containing InAs quantum dots on a GaAs substrate.
9 Acousto-electric single-photon source [Cambridge group (PRA 62, 01183, 2000)] 2DEG n-i-p junction
10 Polarized single photon
11 Principle of adiabatic single electron pumping [Altshuler and Glazman, Science(1999)] electric potential U(x/λ-f t) 1D metal v=λ f e e e e e e e e I=ef adiabatic pumping DC current, I = ef
12 SAW-induced electric potential (SAW=surface acoustic wave) SAW transducer Electric potential U(x/λ-f t) λ f = 2.88 GHz for λ =1 µm
13 SAWPHOTON (Project IST , QIPC) [NBI, Cavendish lab., Scuola Nomale Superiore, Toshiba Europe] Cross section
14
15 ef 2ef 3ef
16 error of ef = 25 ppm
17 Problems to be solved - Electron injection rate > e-h recombination rate (300 ps) (1000 ps for GaAs) Slow down the single electron injection rate
18
19 Preliminary results (NBI & KRISS) G(2e 2 /h) T=1.8 K dg/dv g V g (mv)
20 4 2EI VG (mv) V SD (mv) G (e 2 /h)
21 V G (mv) d 2 I/dV SD dv G of the Sample 2EI (diff. wrt V G done by weighted-averaging over 4 datapoints) (AC excitation : dv SD = µv RMS ) V SD (mv) E-4 0
22 Problems to be solved - difficult to cool down below 1 K due to high rf power 2DEG on top of LiNbO 3 (NBI & KRISS)
23 SAW transducer I = ef A SAW detector λ Nanotube/ Nanowire f= v/λ, v = 2.8 km/s i.e., f = 2.88 GHz for λ =1 µm I = ef = 0.46 na
24 1 D pn SAW n e h p
25 Part II. Qubit
26 NMR 7 qubits (MIT) Trapped Ions 4 qubits (NIST) Photons 3 qubits (ENS Paris) Cooper pair 2 qubit (NEC, Saclay, Chalmers) Flux qubit 2 qubit (Delft) Quntum dot 1 qubit
27 Single Cooper pair box -Q g +Q g -Q +Q E J n V g C g C E=4E c (n-q g /2e) 2 -E J cosφ >E c >E J >> k B T Qubit 0 C g V g /2e
28 Single superconducting Qubit Box Box V g,box V g,,box C g n SET SET C couple V bias V g,set A I V g,set A T=0K I set I set V bias V g,box
29 e I SET (na) V g,box (mv) 4 <n> e E c ~ 170 µev Al ~ 200 µev E J ~ 1 µev R T ~ 12 MΩ V g,box (mv)
30 Single Cooper-pair transistor (SCT) Current bias mode Nb 1 µm Gate E c ~ 30 µev E J ~ 30 µev R T ~ 80 kω Nb ~ 800 µev I(nA) V(mV) I sw (pa) e/c g V g (mv)
31 Superconducting qubits NEC Chalmers Saclay Delft KRISS # of qubits (?) Qubit type charge charge charge+phase phase charge Read out qp tunneling rf SET JJ SQUID? SET (Bloch transistor)? T φ ~ 10 ns ~ 10 ns ~ 500 ns
32 Multiple quantum dots on CNT Why Carbon Nanotube? Ideal 1 D quantum conductor ballistic, long coherent length relatively easy to fabricate detector (+) III II I I (-) II
33
34 Fano resonance in crossed CNTs I:1-4 V:2-3 t 0 t r
35 Spin qubit with a molecular magnet?
36 H θ M easy axis U
37 Measurement of spin state by injecting spin polarized electron Molecular magnet
38 Gate SAM 100 nm Au nanoparticle Au electrode
39 Au nanoparticle δe δe 2π 2 2 /mk F V 1-2 mev (diameter = 8-10 nm)
40 Nano-Fabrication Facilities E-beam lithograph Evaporator (metal film) Ion milling:etching Sputtering machine (magnetic material) Clean room facilities: PR fab process, Si-based device fab Chemical synthesis: nano-particle, nano-tube, nano-wire etc.
41 Measurement Facilities Dilution refrigerator UHV SPM We are now attaching rf components to the dilution refrigerator We have a plan to attach photon detector to a dilution refrigerator (KBSI)
42 Summary Part I. Solid state source of single photon 1. Acousto-electric single photon source: 2DEG 2. Future plan with nanotube and nanowire Part II. Qubit 1. Superconducting qubit 2. Future plan: qubit with CNT and molecules
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