Index 369. Joint density of states, 130
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1 Index Aberrations, 27, 197 Absorption, 131, 133, 141, 333, 335 coefficient, , 135, 245, 285, 287, 336 edge, 130 Acoustic, 91 Acoustic phonons, 89 Acousto-optic modulators, 244 Activation energies, 362 Airy disc, 198, 201 AlGaN, 121, 275 Alloy fluctuations, 138 Alloys, 46, 48, 51, 52, 54, 57, 154 Amorphization, 269 Antimonides, 36 Anvil cells, 175, 191 Aperture-less probe, 208 Aperture-less SNOM, 206, 207 Arrhenius plot, 357 Aspnes, 107 Atomic columns, 28, 30, 32, 34 Atomic interdiffusion, 136 Auger, 189 process, 187 recombination, 186 Autocorrelation, 238 Avalanche photodiodes, 190 Band alignment, 176 Band anticrossing (BAC) model, 113, 178, 287, 323 Band bending, 103 Band dispersion, 299 Band-gap bowing, 324 Band gap energy, 145 Band structure, 116, 172, 173, 175, 178, 302 Band-structure engineering, 44 Band-to-band transition, 131 Bitter magnet, 289, 290 Bose Einstein formulas, 112 Bridgman anvil system, 178 Bright configuration, 99, 101 Built-in electric field, 97, 120 Bulk, 110 Calibration, 238 Capacitance/capacitive transient, 360 Capture rates, 351 Carrier capture cross-section, 363 Carrier dynamics, 303 Carrier screening, 144 Carrier temperatures, 68, 70 Carrier traps, 361 Cathodoluminescence, 199, 212 Clustering, 46, 56 Complexes, 47 Compositional fluctuations, 137 Compressor, 184 Conduction, 117 band, 324 band offset, 116 Conductivity tensor, 284 Confocal microscopes, , 267 Confocal microscopy, 199 Contactless electro-reflectance, 98, 109 Converted luminescence, 237 Coulomb energy, 159 force, 147 interaction, 142, 146, 149, 154 potential, 327 Crystalline disorder, 136 A. Patanè and N. Balkan (eds.), Semiconductor Research, Springer Series in Materials Science 150, DOI / , Springer-Verlag Berlin Heidelberg
2 368 Index Crystalline films, 19 Crystalline interfaces, 18 Crystal momentum, 129 Crystal structure, 24 Cubic lattices, 172 Cyclotron energy, 321 frequency, 283, 285 resonance, 283, 285, 287, 288, 291, 299, 301, 309, 320, 329 resonance spectroscopy, 297 Dark configuration, 98 Deep level, 359 Deep-level transient spectroscopy, 335 Defects, 179, 334, 349, 350 Deformation potential, 90, 266 Degenerate electron gas, 89 Degenerate n-type semiconductor, 142 Degenerate semiconductors, 143 Density of states, 150 Diamagnetic shift, 153, 164 Dichroism, 247, 248 Dielectric function, Differential photoconductivity, 355 Differential transmission, 246 Diffusion, 215, 216 Diffusion length, 216 Dilute nitride, 15, 46, 182, 273, 297, 298, 311 Dingle temperature, 87 Dipole approximation, 129 Dirac point, 313 Dislocations, 50, 54 Disorder, 141 Dispersion curves, 324 Displacement field, 34 Donor wave function, 327 Double photon, 253 Drift velocity, 64, 80, 83, 339 Drude conductivity, 285 Drude scattering time, 288 Drude s model, 276, 312, 315 DX center, 179 EELS. See Electron energy loss spectroscopy Effective mass, 66, 87, 147, 283, 297, 300, 301, 325 Effective mass approximation, 119 Elastic, 216 constants, 52, 58 relaxation, 40 response, 57 Electro-modulation, 97, 102, 104 spectroscopy, 97 Electron beam, 213 effective mass, 153, 159 energy-loss rates, 84 energy relaxation, 84 temperature, 72, 90 trap, 352 tunneling, 327 Electron electron interactions, 143 Electron energy loss spectroscopy (EELS), 27, 37 Electronic wave function, 325 Electron phonon, 90 Electroreflectance, 97, 102 Electrostatic force, 146 Emission, 351 rate, 353, 361 Energy dispersive X-ray spectroscopy, 27 and momentum balance method, 81 relaxation times, 64, 71 resolution, 128 Energy-loss rate, 90 Energy wavevector dispersion, 323, 325 Exciton, 136, 146, 160, 164, 166 binding energy, 154 gyromagnetic ratio, 148 localization, 137 Excitonic level, 134 Excitonic transitions, 111 Extrinsic photoconductivity, 339 Faraday, 248 Faraday rotation, 249 Far-infrared, 294 Fast excitation sources, 224 Fast photomultipliers/avalanche photodiodes, 226 Fast response times, 252 Fermi liquid, 144 wave vector, 144 Fermi s Golden Rule, 286, 287 Filling factor, 151 Filtering, 34 Finite element method, 36 First-order Raman, 262 Forbidden transitions, 117 Fourier transform, 33 Four-wave mixing, 251 Fractional quantum Hall effect, 318
3 Index 369 Franz Keldysh oscillation, 120 Free-carrier, 154 Free electrons laser, 292 Free excitons, 131 Frenkel defect, 350 Frequency modulation, 243 Fröhlich interaction, 266 GaAs, 9, 13, 179 GaAsN, 46, 48, 113, 161, 230, 278 GaInAsSb, 279 GaInNAs, 15, 44, 75, 79, 87, 119, 348, 356 GaInNAsSb, 116, 117 GaN, 51, 55, 110, 214, 272 GaP, 272 Gap mode, 272 Gaussian, 105, 106 Generation rate, 336, 337 Generation recombination, 350 Geometric phase analysis, 36 Graphene, 313 Group velocity dispersion, 236 Growth, 15 Growth rate, 16 Gunn effect, 173, 174 Impact ionization, 174, 191 Impurity concentrations, 271 InAlGaN, 55 InAs, 8, 40, 41, 43, 118, 122, 161, 312 InAs x P 1 x, 32 InAs x P 1 x alloy, 30 InAs x P 1 x /InP interface, 29 Inelastic scattering, 216 InGaAs, 76, 270, 301 InGaN, 112, 204, 207, 208, 213, 239, 274, 275 InN, 48 50, 143, 159, 239, 271 InP, 179, 269, 275, 278 InSb, 8 Interface-roughness scattering, 85 Interfaces, 12 Interferogram, 103 Interstitials, 349 Intrinsic photoconductivity, 339 Intrinsic semiconductors, 312 Ionised impurity scattering, 85 Ionization energy, 212 Isoelectronic-impurity, 160 Joint density of states, 130 HAADF images, 29, 30 HAADF-STEM, 31, 32, 37, 38 Hall effect, 88, 178, 309, 310, 312 Hall field, 310 Hanbury Brown Twiss scheme, 256 Heterojunction band offsets, 115 Heterostructures, 12, 23, 37, 39, 49, 126 Heterosystems, 52 High angle annular dark field, 28 High magnetic fields, 289, 293 Holes, 110 Hot carriers, 63, 69, 91 population, 76 Hot electron momentum relaxation, 79 Hot electron photoluminescence, 65 Hot phonons, 72, 79, 82, 83 HRTEM, 24, 25, 32, 33, 35 Hybrid magnet, 290 Hydrogen, Hydrogenic impurity, 288 III N, 52, 55 III V, 23, 24, 173, 177 crystals, 174 surfaces, 8 Kerr, 249 rotation, 248 signal, 250 Kramers Kronig, 109 relations, 104, 108, 242 transformation, 108 Lambert relation, 129 Landau levels, , 158, 165, 284, , 303, 310, , Landé g-factor, 249, 250 Larmor precession, 250 Lasers, 185, 186, 233 Lattice damage, 269 Lattice parameters, 56 LEED, 1, 2, 4, 6, 8, 10, 11, 18 Light polarization, 128 Lindhard Mermin model, 278 Lindhard Mermin susceptibility, 277 Linear microscopy, 199 Lineshape, 108, 138 Linewidth, 288 Localization, 154 Longitudinal optical (LO) phonon, 68 Lorentz force, 310
4 370 Index Lorentzian, 105, 106 Luminescence, 200, 202, 208, 211, 215 Luminescence spectroscopy, 197 Magnetic fields, 87, 146, 149, 153, 158, 163, 166, 167, 284, 286, 288, 291, 292, 294, 295, 299, 304, 309, 315, 324, 327, 328 Magneto-oscillations, 317, 318 Magneto-phonon resonance, 293, 319 Magneto-photoluminescence, 167 Magnetoresistance, 295, 314, 315, 319, 329 Magnetoresistivity, 316 Magnetoresistivity tensor, 315 Magnetospectroscopy, 291 Magneto-transmission, 298, 299, 303 Magneto-tunneling, 329 Maxwell Boltzmann distribution, 66 Micro-photoluminescence, 126, 199 Micro-Raman, 268 Microscope objective, 126 Microseconds, 304 Mid-infrared, 184 Miscibility and phase segregation, 274 Mismatched alloys, 132, 154 Mobility, 69, 311, 321 Modulated photoconductivity, 342 Momentum, 64 relaxation rate, 81 relaxation time, 70 Monochromator, 127 Moss Burstein shift, 143 Nanoscale materials, 183 Nanostructures, 49 Nanowires, Near field, 205, 206 Negative magnetoresistance, 322 Neutral-acceptor, 151 Nitride alloys, 275 layers, 53 Nitrogen, 77, 79, 180, 297, 300, 301 Non-contact electromodulation, 97 Non-degenerate semiconductor, 352 Non-equilibrium phonon population, 73 Non-equilibrium phonons, 73 Nonlinear crystal, 234 Nonlinear optical process, 241 Non-parabolicity effects, 158, 273, 287, 299, 302 Non-radiative process, 351 Non-radiative recombination, 213 Nucleation sites, 42, 43 Numerical aperture, 128 Optical distortions, 199 Optical heating, 74 Optical modulation spectroscopy, 95 Optical parametric oscillator, 235 Optical phonons, 91 replica, 133 scattering, 81 Optical photodiode bridge, 244 Optical properties, 126 Optical transitions, 119, 122 Optoelectronic devices, 183 Oscillations, 87, 108, 135, 293 Peak pairs analysis, 36 Penetration depth of nonequilibrium carriers, 217 Phase boundaries, 180 Phase-locking, 227 Phase-matching, 234 Phase-matching condition, 237 Phase stability, 183 Phase transition, 180, 182 Phonon, 80, 130, 262, 265 energy, 75, 83 occupation, 82 quanta, 320 scattering, 83 scattering time, 75 wind, 217 Phonon plasmon, 275 Phonon plasmon interaction, 277 Photocathodes, 229 Photocells, 334 Photoconductivity, , 341, 344 decay, 348, 356 transient decay, 353 Photocurrent, , 340, 343, 353 Photodetectors, 294 Photo-induced transient spectroscopy, 335 Photoluminescence, 65, 126, 132, 166, 211, 345 Photoluminescence dynamics, 232 Photon-counting, 228 Photoreflectance, 96, 97, 101, 103 Photovoltaic effect, 100 Picosecond, 231 Piezoelectric interactions, 90 sample stage, 201
5 Index 371 Pinhole, 200 Plasma frequency, 276 Point defects, 44 Poisson distribution, 255 Polar interactions, 64 Polarization, 244, 248, 249, 262 Positive linear magnetoresistance, 320 Positive magnetoresitance, 321 Power loss, 89, 90 Pressures, 171, 173, 176, 178, 180, 182, 183, 185, equipment, 191 Probe beam, 243 Probe technique, 240 Pulsed magnetic fields, 292, 293 Pulsed magnets, 290, 295 Pulse duration, 290 Pump, 240 and probe beams, 243 and probe experiments, 242, 244 and probe technique, 248 Pump probe interaction, 241 Quantum cascade lasers, 189, 292 Quantum dash, 122 Quantum dots, 37, 49, 117, 217, 218, 255, 326 Quantum efficiency, 336 Quantum Hall effect, 312, 318 Quantum well, 115, 136, 230, 313, 345, 348 Quantum well transitions, 347 Quantum wires, 40 Quaternary alloy, 17 Radiation damage, 28 Radiative lifetime, 139 recombination, 131, 212 Raman-active modes, 263, 268 Raman effect, 259 Raman experiment, 261 Raman intensity, 262 Raman scattering, 263, 266, 269, 270, 273 Raman signal, 266 Raman spectra, 269, 271, 275 Raman spectroscopy, 259, 262, 269, 271, 274 Raman tensor, 263 Rate window, 357 Rayleigh criterion, 198 Rayleigh radiation, 267 Recombination, 154 processes, 66 rates, 337 Reconstructions, 5, 9, 12 14, 19 Reflectance, 96, 102, 103 Reflectivity coefficient, 104 Relaxation, 131, 134 coefficient, 52 times, 245, 304 Resonance, 109 Resonant tunneling, 323, 324 RHEED, 1 4, 6, 7, 11, 13, Roth Argyres formula, 315 Rutherford-scattering, 27, 48 Scanning, 199 Scanning near-field optical microscopy (SNOM), 199, 204, 207, 208, 210, 211 probes, 206 resolution, 206 Scanning tunneling microscopy, 326 Scattering time, 71 Schottky contact, 358 defect, 350 diode, 358 Segregation, 38 Selection rules, 120, 262 SEM, 213 Semiconductor lasers, 185 Semiconductor physics, 172 Seraphin coefficients, 104 Shear-force, 209 Shubnikov de Haas effect, 310, 312, 316, 317 Single photon, 252 SNOM. See Scanning near-field optical microscopy Spatial resolution, 198, 200, 202, 203, 205 Spectral photoconductivity, 344 Spin, 162 dynamics, 246 grating, 251 relaxation, 246 Split interstitial, 48 Stark effect, 148 Steady photocurrent, 343 Steady-state, 341 Steady-state photoconductivity, 355 STEM, 25, 26, 35, 213 Stokes and anti-stokes components, 261 Stokes shift, 140 Strain mapping, 32 Strains, 33 36, 40 42, 57, 270 Stranski Krastanov quantum dots, 240 Streak cameras, 76, 226, 228, 230, 238, 239 Streak oscillator, 227
6 372 Index Structural disorder, 138 Subband, 117 Sub-diffraction resolution, 218 Sub-picosecond resolution, 225 Substitutional, 349 Sub-wavelength microscopy, 205 Superconductor, 289 Superresolution, 202 Surfaces, 1 5, 19 accumulation layer, 312 electric field, 101 plasmons, 207 reconstructions, 11 roughness, 16 steps, 41 Susceptibility, 242, 263 Synchronization, 235 Tapered fibers, 206 Tapered single-mode optical fibers, 206 Tapered waveguide, 210 Tapping mode feedbacks, 209, 210 TEM. See Transmission electron microscopy Temporal resolutions, 225, 229, 252 Temporal window, 253 Ternary alloy, 17 Thermalization, 140, 141, 239 Threshold current, 185 Time resolution, 224, 228, 254 Time-resolved luminescence, 230 Time-resolved optical spectroscopy, 223, 256 Time-resolved photoluminescence, 224 Time-resolved photoluminescence spectroscopy, 230 Time-to-amplitude converter, 253 Transient decay, 360 dynamics, 247 photoconductivity, 341, 347 spectroscopy, 334, 335, 350, 353 Transient absorption phenomena, 243 Transistor heterostructures, 120 Transition, 117 Transit time spread, 254 Transmission, 133, 285, 292 Transmission electron microscopy (TEM), 23, 24 Traps, 339, 341, 357, 358 concentration, 361 density, 351, 363 parameters, 356 Triple spectrometers, 267 Tunneling, 322 Two-dimensional electron gas, 313 Two-photon excitation, 207 Type-II band, 37 Ultra-fast lasers, 224 Ultra-fast spectroscopic techniques, 240 Ultra-short pulses, 223 Up-conversion, 230, 231, 234, 236, 238, 239 Vacancies, 349 Valence band offset, 176 Varshni, 112 V-defects, 56 Vegard s law, 52, 57 Virtual crystal approximation, 138 Wannier functions, 147 Wannier Mott excitons, 215 Wave function, 328 Weak localization, 322 Wetting layer, 118 Z-contrast, 31, 32 Z-contrast imaging, 28 Zeeman effect, 151 Zeeman splitting, 162 Zincblende compound, 130, 172 ZnO, 272
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