Semiconductor Physical Electronics

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1 Semiconductor Physical Electronics Sheng S. Li Department of Electrical Engineering University of Florida Gainesville, Florida Plenum Press New York and London

2 Contents CHAPTER 1. Classification of Solids and Crystal Structure 1.1. Introduction The Bravais Lattice The Crystal Structure Miller Indices and the Unit Cell The Reciprocal Lattice and Brillouin Zone Types of Crystal Bindings Defects in a Crystalline Solid Vacancies and Interstitials Line and Surface Defects 16 Problems 18 Bibliography 18 CHAPTER 2. Lattice Dynamics 2.1. Introduction The One-Dimensional Linear Chain Dispersion Relation for a Three-Dimensional Lattice Concept of Phonons The Density of States and Lattice Spectrum Lattice Specific Heat Elastic Constants and Velocity of Sound 35 Problems 37 References 39 Bibliography 39 CHAPTER 3. Semiconductor Statistics 3.1. Introduction Maxwell-Boltzmann (M-B) Statistics Fermi-Dirac (F-D) Statistics 45 vii

3 vffi CONTENTS 3.4. Bose-Einstein (B-E) Statistics Statistics in the Shallow-Impurity States 52 Problems 53 Bibliography 54 CHAPTER 4. Energy Band Theory 4.1. Introduction The Bloch-Floquet Theorem The Kronig-Penney Model The Nearly-Free Electron Approximation The Tight-Binding (LCAO) Approximation The Simple Cubic Lattice The Body-Centered Cubic Lattice (the s-like states) Energy Band Structures for Semiconductors The Effective Mass Concept Energy Band Structure and Density of States in a Superlattice 80 Problems 83 References 85 Bibliography 85 CHAPTER 5. Equilibrium Properties of Semiconductors 5.1. Introduction Densities of Electrons and Holes in a Semiconductor Intrinsic Semiconductors Extrinsic Semiconductors Ionization Energy of a Shallow Impurity Level Hall Effect, Hall Mobility, and Electrical Conductivity Heavy Doping Effects in a Degenerate Semiconductor 107 Problems 109 Reference Ill Bibliography Ill CHAPTER 6. Excess Carrier Phenomenon in Semiconductors 6.1. Introduction Nonradiative Recombination: Shockley-Read-Hall Model Band-to-Band Radiative Recombination Band-to-Band Auger Recombination Basic Semiconductor Equations Charge-Neutrality Conditions The Haynes-Shockley Experiment Minority Carrier Lifetimes and Photoconductivity Experiment Surface States and Surface Recombination Velocity Deep-Level Transient Spectroscopy (DLTS) Technique 138

4 CONTENTS ix Surface Photovoltage (SPV) Technique 141 Problems 143 References 145 Bibliography 145 CHAPTER 7. Transport Properties of Semiconductors 7.1. Introduction Galvanomagnetic, Thermoelectric, and Thermomagnetic Effects Electrical Conductivity a Electronic Thermal Conductivity K Thermoelectric Coefficients Galvanomagnetic and Thermomagnetic Coefficients Boltzmann Transport Equation Derivation of Transport Coefficients Electrical Conductivity a Hall Coefficient R Seebeck Coefficient S Nernst Coefficient ß Transverse Magnetoresistance Transport Coefficients for the Mixed Conduction Case Electrical Conductivity a Hall Coefficient R Seebeck Coefficient S Nernst Coefficient ß Transport Coefficients for Some Semiconductors 171 Problems 179 References 181 Bibliography 181 CHAPTER 8. Scattering Mechanisms and Carrier Mobilities in Semiconductors 8.1. Introduction Differential Scattering Cross Section Ionized Impurity Scattering Neutral Impurity Scattering Acoustic Phonon Scattering Deformation Potential Scattering Piezoelectric Scattering Optical Phonon Scattering Scattering by Dislocations Electron and Hole Mobilities in Semiconductors Hot Electron Effects in a Semiconductor 204 Problems 209 References 210 Bibliography 211

5 x CONTENTS CHAPTER 9. Optical Properties and Photoelectric Effects 9.1. Optical Constants of a Solid Free-Carrier Absorption Process Fundamental Absorption Process Direct Transition Process Indirect Transition Process The Photoconductive Effect Kinetics of Photoconduction Practical Applications of Photoconductivity The Photovoltaic (Dember) Effect The Photomagnetoelectric Effect 240 Problems 244 References 245 Bibliography 245 CHAPTER 10. Metal-Semiconductor Contacts Introduction Metal Work Function and Schottky Effect Thermionic Emission Theory Ideal Schottky Barrier Contact Current Flow in a Schottky Barrier Diode Thermionic Emission Model Image Lowering Effect The Diffusion Model I-V Characteristics of a Silicon and a GaAs Schottky Diode Determination of Barrier Height Enhancement of Effective Barrier Height Applications of Schottky Diodes Photodetectors and Solar Cells Schottky-Clamped Transistors Microwave Mixers Ohmic Contacts 279 Problems 284 References 285 Bibliography 285 CHAPTER 11. p-n Junction Diodes Introduction Equilibrium Properties of a p-n Junction Diode p-n Junction Under Bias Conditions Minority Carrier Distribution and Current Flow Diffusion Capacitance and Conductance Minority Carrier Storage and Transient Behavior Zener and Avalanche Breakdowns Tunnel Diode p-n Heterojunction Diodes 314

6 CONTENTS xi Junction Field-Effect Transistors 318 Problems 324 References 325 Bibliography 326 CHAPTER 12. Photonic Devices Introduction Photovoltaic Devices p-n Junction Solar Cells Schottky Barrier and MIS Solar Cells Heterojunction Solar Cells Thin Film Solar Cells Photodetectors p-n Junction Photodiodes p-i-n Photodiodes Avalanche Photodiodes Schottky Barrier Photodiodes Point-Contact Photodiodes Heterojunction Photodiodes Photomultipliers Long-Wavelength Infrared Detectors Light-Emitting Diodes (LEDs) Injection Mechanisms Electronic Transitions Luminescent Efficiency and Injection Efficiency Application of LEDs Semiconductor Laser Diodes Population Inversion Oscillation Conditions Threshold Current Density GaAs Laser Diodes Semiconductor Laser Materials Applications of Lasers 386 Problems 387 References 388 Bibliography 389 CHAPTER 13. Bipolar Junction Transistor Introduction Basic Structures and Modes of Operation Current-Voltage Characteristics Current Gain, Base Transport Factor, and Emitter Injection Efficiency Modeling of a Bipolar Junction Transistor Switching Transistor Advanced Bipolar Transistor 414

7 xii CONTENTS Thyristors 415 Problems 420 References 421 Bibliography 422 CHAPTER 14. Metal-Oxide-Semiconductor Field-Effect Transistors Introduction An Ideal Metal-Oxide-Semiconductor System Surface Space-Charge Region Capacitance-Voltage Characteristics Oxide Charges and Interface Traps Interface Trap Charges Oxide Charges The MOS Field-Effect Transistors General Characteristics of a MOSFET Channel Conductance Current-Voltage Characteristics Small-Signal Equivalent Circuit Scaled-Down MOSFETs Charge-Coupled Devices Charge Storage and Transfer Charge Injection and Detection Buried-Channel CCDs 451 Problems 452 References 453 Bibliography 453 CHAPTER 15. High-Speed II1-V Semiconductor Devices Introduction Metal-Semiconductor Field-Effect Transistors Basic Device Structure and Characteristics Current-Voltage Characteristics Small-Signal Device Parameters Second-Order Effects in a GaAs MESFET Modulation-Doped Field-Effect Transistors (MODFETs) Equilibrium Properties of the 2-DEG in GaAs DEG Charge Control Regime Current-Voltage Characteristics Heterojunction Bipolar Transistor Device Structure and Fabrication Technology Current Gain and Device Parameters Current-Voltage Characteristics High-Frequency Performance Hot Electron Transistors Resonant Tunneling Devices 493

8 CONTENTS xffi Transferred-Electron Devices 495 Problems 499 References 501 Bibliography 501 Index 503

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