Physics of Low-Dimensional Semiconductor Structures
|
|
|
- Sophie Higgins
- 5 years ago
- Views:
Transcription
1 Physics of Low-Dimensional Semiconductor Structures Edited by Paul Butcher University of Warwick Coventry, England Norman H. March University of Oxford Oxford, England and Mario P. Tosi Scuola Normale Superiore Pisa, Italy Plenum Press New York and London
2 1. Electronic Properties in Semiconductor Heterostructures L. J. Sham 1.1. Introduction Basic Electronic Properties in Quantum Wells Typical Band Structure of Bulk Semiconductors Electron Confinement Hole Subbands Interface Effects on Electrons Effective Mass Theory for Heterostructures Band Offsets Types of Superlattices Classification According to Band Edge Alignment Two-Band Model Metal-Insulator Transition in Type II GaSb/InAs Type III HgTe/CdTe Electrons in Short-Period Superlattices The Kronig-Penney Model Symmetry Properties of Superlattices Computation Methods for Superlattice Electronic Structure Valley Mixing between Г and X Valley Mixing between X x and X y Fractional Layer Numbers Effects of Magnetic Fields Conduction Electron in a Magnetic Field Normal to the Interface Valence Holes in a Magnetic Field Normal to the Interface Conduction Electron in a Magnetic Field Parallel to the Interface Electron Self-Energy Effects in a Doped Quantum Well The Interaction Hamiltonian Screening Electron and Hole Self-Energies Comparison with Experiment 41 ix
3 x 1.8. Photoluminescence in Undoped and Doped Quantum Wells Selection Rules Polarization Spectrum in the Backscatter Configuration Luminescence Polarization in the Waveguide Configuration References Phonons in Low-Dimensional Systems J. D. White and G. Faso/ 2.1. Introduction Phonons in Bulk Semiconductors Real and Reciprocal Space Unit Cells Phonons in Crystals Raman Scattering Phonons in Layered Media Raman Investigations of Superlattices Phonon Dispersion in Superlattices Acoustic Phonons Confined Optical Phonons Phonon Dispersion in Superlattices with Various Space Group Symmetries Interface Phonons Experimental Procedure Introduction Configuration of Raman Apparatus Conclusions 90 References Theory of Electron Transport in Low-Dimensional Semiconductor Structures P. N. Butcher 3.1. Introduction The Energy Band Structure of 2D and ID Electron Gases Two-Dimensional Electron Gas One-Dimensional Electron Gas Boltzmann Transport Theory The Transport Coefficient Boltzmann's Equation in the Quantum Limit The Relaxation Time Ansatz in the Quantum Limit Boltzmann Transport Theory for More Than One Subband Quantum Size Effects in the Transport Coefficients The Boltzmann Transport Approximation to the Electrical Conductivity of a 2DEG 107
4 x ' The Effect of Level Broadening on the Electrical Conductivity of a 2DEG Quantum Size Effect in the Thermopower of a 2DEG Quantum Size Effect in a 1DEG Discussion Phonon Drag Thermopower of a 2DEG Introduction An Elementary Treatment of Phonon Drag Thermopower Calculation of the Phonon Drag Thermopower from Coupled Electron and Phonon Boltzmann Equations Recovering the Elementary Formula for Phonon Drag Comparison of Theory and Experiment Quantum Corrections to the Boltzmann Transport Formalism Introduction Kubo-Greenwood Formulas When В = Kubo Formulas When В Ф Onsager Symmetry Weak Localization Corrections to the Conductivity Universal Fluctuations Thermal and Electrical Transport Formalism for Electronic Microstructures with Many Terminals Introduction The Electron States in the Terminals The Scattering Matrix General Terminal Transport Relations for Microstructures Simplification of the Terminal Transport Relations for a Microstructure Onsager Symmetry and Reciprocity Conclusion The Aharonov-Bohm Effect, Quantum Point Contacts, and the Integer Quantum Hall Effect Introduction The Aharonov-Bohm Effect Quantum Point Contacts The Integer Quantum Hall Effect Conclusion 170 References Quantum Wires and Quantum Dots F. Stern 4.1. Dimensionality Structures and Fabrication Electronic States Phonons 187
5 xii 4.5. Charges in Quantum Wires and Quantum Dots Dielectric Response, Screening, and Plasmons Transport Properties Bound States Optical Properties Magnetic Field Effects Prospects for Device Applications 197 References Quantum Interference in Disordered Electron Systems G. Bergmann 5.1. The Echo of the Scattered Conduction Electron Time-of-Flight Experiment by a Magnetic Field Spin-Orbit Coupling Magnetic Scattering in Kondo Systems Kondo Maximum Low-Temperature Behavior of the Magnetic Scattering Rate Quenching of Interacting Moments Far Below the Kondo Temperature Electrons Confined in Tunneling Junctions The Range of the Dynamical Coulomb Interaction 222 References Theory of the Quantum Hall Effect N. d'ambrumenil 6.1. Introduction The Quantum Hall Effect The Measurement Interpretation of the Measurement Laughlin's Gedanken Experiment Aspects of a Microscopic Theory of the Quantum Hall Effect Edge States The Fractional Quantum Hall Effect Interpretation of the Measurement: Many-Body Gap and Fractional Charge Zeros and Flux Quanta Laughlin's Wave Function Haldane's Argument Other Filling Fractions: The Hierarchy Microscopic Trial Wave Functions for the Hierarchy Spin Polarization 250
6 xiii Higher Landau Levels Ring Exchange Summary 252 Appendix: (More or Less) Standard Results А.1. Hamiltonian and Energy Spectrum A.2. Gauge Choice A.3. Conserved Momenta, Magnetic Translations, and Rotations A.4. The Single-Particle Green's Function A.5. Exactness of Laughlin's Wave Function A.6. The Hierarchy 262 References Tunneling in Semiconductor Resonant Structures G. Garcia-Calderön 7.1. Introduction Concept of Tunneling Brief History of Tunneling Resonant Structures Physics of Resonant Tunneling Resonant States Coherent Tunneling Current Inelastic Effects Conclusion 294 References Keldysh Formalism and the Landauer Approach S. Datta 8.1. Introduction A Few Concepts Equilibrium Solution Transport Equation Terminal Current Linear Response Reciprocity Heat Exchange Concluding Remarks 320 Appendix: Mathematical Details 321 References 329
7 xiv 9. Magneto-Optical Properties of Semiconductor Heterostructures J. С. Maan 9.1. Introduction Energy Levels of Heterostructures in a Magnetic Field and a Confining Potential Perpendicular Field Tilted Field Parallel Field Superlattices in a Parallel Field Selection Rules and Transition Matrix Elements Cyclotron Resonance Parabolic Bands Nonparabolicity Tilted Field Intraband Experiments Interband Transitions Simple Bands Excitons in a Magnetic Field Valence Band Structure Doped Samples Applications of Magneto-Optics High-Excitation Luminescence in Quantum Wells Spin Relaxation in Quantum Wells Summary 370 References Electrons in Superlattices G. H. Döhler Introduction Electronic Band Structure of Superlattices Compositional Superlattices Doping Superlattices {n-i-p-i Structures) Dynamics of Electrons in Superlattices Bloch Oscillations and the Wannier-Stark Ladder Transitions on the Wannier-Stark Ladder and Transport Properties Intersubband Transitions Interband Transitions in Superlattices Dipole Matrix Elements in Type-I and Type-II Compositional and n-i-p-i Doping Superlattices The Internal Franz-Keldysh Effect in n-i-p-i Superlattices The Quantum Confined Stark Effect: "MQW-Hetero-n-i-p-fs" 395
8 xv Magnetic Wave Function Tuning in Doping Superlattices Impurity States and Impurity Bands in 5-Doped n-i-p-i Superlattices References Metallic Superlattices D. Kerkmann and D. Peseta Growth Modes and Structural Analysis of Metallic Superlattices Growth of Metallic Epitaxial Layers Growth Detection Magnetic Ground State of Epitaxial Layer "Enhanced" Magnetic Moments The Many-Spin Ground State and Low-Lying Excited States Magnetism of Epitaxial Films at Finite Temperatures Long-Range Order at Finite Temperatures Magnetic Anisotropy and Long-Range Order Existence of a Phase Transition at Temperatures T ~ Г 432 References Phonon Emission, Absorption, and Reflection from a Two-Dimensional Electron Gas L. J. Challis Introduction Phonon Emission Zero Magnetic Fields Quantizing Magnetic Fields Phonon Scattering Conclusion 459 References Quantum Adiabatic Electron Transport in Ballistic Conductors L. P. Kouwenhoven Introduction Fabrication and Working Principles of a Split-Gate Device Quantized Conductance of a Point Contact Depopulation of ID Magnetoelectric Subbands Electron Motion in a Magnetic Field Electron Focusing Edge Channels Quantized Longitudinal Conductance 480
9 xvi Anomalous Integer Quantum Hall Effect Transition from Ohmic to Adiabatic Transport Transport Through Two QPCs in Series Electron-Beam Collimation and Electron Focusing in a Dot Summary and Conclusions 494 References Experiments on Two-Dimensional Wigner Crystals E. Y. Andrei, F. J. B. Williams, D. С Glattli, and G. Devil/e Introduction The Phase Diagram Coulomb System of Classical Particles Coulomb System of Quantum Particles T = 0, В = Coulomb System of Quantum Particles T = 0, В Ф Coulomb System of Quantum Particles T Ф 0, В Ф How to Recognize the Solid? Experimental Realizations of a 2D Plasma Experiments on the Quantum Wigner Crystal Shear Modulus Measurements Conductivity Measurements Discussion Experiments on the Classical Wigner Crystal Shear Modulus Experiments Specific Heat Experiments Summary 535 References Artificial Semiconductor Structures: Electronic Properties and Device Applications F. Be/tram and F. Capasso Introduction Quantum Electron Devices Resonant Tunneling Bipolar Transistors with Double Barrier in the Base Devices with Multiple Peak /- V Characteristics and Multiple-State RTBTs Gated Quantum-Well and Superlattice Base Transistor Transport in Superlattices Transport and Negative Differential Conductance in Superlattices with Wide Minibands Localization and Transport in Superlattices 565
10 xvii Bloch Oscillations Observation of Negative Differential Conductance in a Superlattice Scattering-Controlled Resonances 571 References 573 Index 577
Physics of Low-Dimensional Semiconductor Structures
Physics of Low-Dimensional Semiconductor Structures PHVSICS OF SOllOS ANO llquios Editorial Board: Jozef T. Devreese University 0/ Antwerp, Belgium Roger P. Evrard University 0/ L i ~ Belgium g e, Stig
Electronic and Optoelectronic Properties of Semiconductor Structures
Electronic and Optoelectronic Properties of Semiconductor Structures Jasprit Singh University of Michigan, Ann Arbor CAMBRIDGE UNIVERSITY PRESS CONTENTS PREFACE INTRODUCTION xiii xiv 1.1 SURVEY OF ADVANCES
PHYSICS OF SEMICONDUCTORS AND THEIR HETEROSTRUCTURES
PHYSICS OF SEMICONDUCTORS AND THEIR HETEROSTRUCTURES Jasprit Singh University of Michigan McGraw-Hill, Inc. New York St. Louis San Francisco Auckland Bogota Caracas Lisbon London Madrid Mexico Milan Montreal
QUANTUM WELLS, WIRES AND DOTS
QUANTUM WELLS, WIRES AND DOTS Theoretical and Computational Physics of Semiconductor Nanostructures Second Edition Paul Harrison The University of Leeds, UK /Cf}\WILEY~ ^INTERSCIENCE JOHN WILEY & SONS,
Basic Semiconductor Physics
Chihiro Hamaguchi Basic Semiconductor Physics With 177 Figures and 25 Tables Springer 1. Energy Band Structures of Semiconductors 1 1.1 Free-Electron Model 1 1.2 Bloch Theorem 3 1.3 Nearly Free Electron
Optical Characterization of Solids
D. Dragoman M. Dragoman Optical Characterization of Solids With 184 Figures Springer 1. Elementary Excitations in Solids 1 1.1 Energy Band Structure in Crystalline Materials 2 1.2 k p Method 11 1.3 Numerical
Solid Surfaces, Interfaces and Thin Films
Hans Lüth Solid Surfaces, Interfaces and Thin Films Fifth Edition With 427 Figures.2e Springer Contents 1 Surface and Interface Physics: Its Definition and Importance... 1 Panel I: Ultrahigh Vacuum (UHV)
Harald Ibach Hans Lüth SOLID-STATE PHYSICS. An Introduction to Theory and Experiment
Harald Ibach Hans Lüth SOLID-STATE PHYSICS An Introduction to Theory and Experiment With 230 Figures Springer-Verlag Berlin Heidelberg New York London Paris Tokyo Hong Kong Barcelona Budapest Contents
ELECTRONS AND PHONONS IN SEMICONDUCTOR MULTILAYERS
ELECTRONS AND PHONONS IN SEMICONDUCTOR MULTILAYERS В. К. RIDLEY University of Essex CAMBRIDGE UNIVERSITY PRESS Contents Introduction 1 Simple Models of the Electron-Phonon Interaction 1.1 General remarks
Preface Introduction to the electron liquid
Table of Preface page xvii 1 Introduction to the electron liquid 1 1.1 A tale of many electrons 1 1.2 Where the electrons roam: physical realizations of the electron liquid 5 1.2.1 Three dimensions 5 1.2.2
SOLID STATE PHYSICS. Second Edition. John Wiley & Sons. J. R. Hook H. E. Hall. Department of Physics, University of Manchester
SOLID STATE PHYSICS Second Edition J. R. Hook H. E. Hall Department of Physics, University of Manchester John Wiley & Sons CHICHESTER NEW YORK BRISBANE TORONTO SINGAPORE Contents Flow diagram Inside front
wave mechanics applied to semiconductor heterostructures
wave mechanics applied to semiconductor heterostructures GERALD BASTARD les editions de physique Avenue du Hoggar, Zone Industrielle de Courtaboeuf, B.P. 112, 91944 Les Ulis Cedex, France Contents PREFACE
Physics of Semiconductors (Problems for report)
Physics of Semiconductors (Problems for report) Shingo Katsumoto Institute for Solid State Physics, University of Tokyo July, 0 Choose two from the following eight problems and solve them. I. Fundamentals
ELECTRONS AND PHONONS IN SEMICONDUCTOR MULTILAYERS
ELECTRONS AND PHONONS IN SEMICONDUCTOR MULTILAYERS Second Edition B.K. RIDLEY University of Essex CAMBRIDGE UNIVERSITY PRESS Contents Preface Introduction 1 Simple Models of the Electron-Phonon Interaction
Optical Properties of Semiconductors. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India
Optical Properties of Semiconductors 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India http://folk.uio.no/ravi/semi2013 Light Matter Interaction Response to external electric
Quantum Physics in the Nanoworld
Hans Lüth Quantum Physics in the Nanoworld Schrödinger's Cat and the Dwarfs 4) Springer Contents 1 Introduction 1 1.1 General and Historical Remarks 1 1.2 Importance for Science and Technology 3 1.3 Philosophical
Optical Properties of Solid from DFT
Optical Properties of Solid from DFT 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India & Center for Materials Science and Nanotechnology, University of Oslo, Norway http://folk.uio.no/ravi/cmt15
Impact of disorder and topology in two dimensional systems at low carrier densities
Impact of disorder and topology in two dimensional systems at low carrier densities A Thesis Submitted For the Degree of Doctor of Philosophy in the Faculty of Science by Mohammed Ali Aamir Department
Quantum Transport and Dissipation
Thomas Dittrich, Peter Hänggi, Gert-Ludwig Ingold, Bernhard Kramer, Gerd Schön and Wilhelm Zwerger Quantum Transport and Dissipation WILEY-VCH Weinheim Berlin New York Chichester Brisbane Singapore Toronto
Quantum Theory of the Optical and Electronic Properties of Semiconductors Downloaded from
This page intentionally left blank Published by World Scientific Publishing Co. Pte. Ltd. 5 Toh Tuck Link, Singapore 596224 USA office: 27 Warren Street, Suite 401-402, Hackensack, NJ 07601 UK office:
PHYSICS OF NANOSTRUCTURES
PHYSICS OF NANOSTRUCTURES Proceedings of the Thirty-Eighth Scottish Universities Summer School in Physics, St Andrews, July-August 1991. A NATO Advanced Study Institute. Edited by J H Davies Glasgow University
Metals: the Drude and Sommerfeld models p. 1 Introduction p. 1 What do we know about metals? p. 1 The Drude model p. 2 Assumptions p.
Metals: the Drude and Sommerfeld models p. 1 Introduction p. 1 What do we know about metals? p. 1 The Drude model p. 2 Assumptions p. 2 The relaxation-time approximation p. 3 The failure of the Drude model
Solid State Physics. GIUSEPPE GROSSO Professor of Solid State Physics, Department of Physics, University of Pavia, and INFM
Solid State Physics GIUSEPPE GROSSO Professor of Solid State Physics, Department of Physics, University of Pisa, and INFM GIUSEPPE PASTORI PARRAVICINI Professor of Solid State Physics, Department of Physics,
QUANTUM MECHANICS. Franz Schwabl. Translated by Ronald Kates. ff Springer
Franz Schwabl QUANTUM MECHANICS Translated by Ronald Kates Second Revised Edition With 122Figures, 16Tables, Numerous Worked Examples, and 126 Problems ff Springer Contents 1. Historical and Experimental
Nanoscale Energy Transport and Conversion A Parallel Treatment of Electrons, Molecules, Phonons, and Photons
Nanoscale Energy Transport and Conversion A Parallel Treatment of Electrons, Molecules, Phonons, and Photons Gang Chen Massachusetts Institute of Technology OXFORD UNIVERSITY PRESS 2005 Contents Foreword,
Sheng S. Li. Semiconductor Physical Electronics. Second Edition. With 230 Figures. 4) Springer
Sheng S. Li Semiconductor Physical Electronics Second Edition With 230 Figures 4) Springer Contents Preface 1. Classification of Solids and Crystal Structure 1 1.1 Introduction 1 1.2 The Bravais Lattice
Electronic Quantum Transport in Mesoscopic Semiconductor Structures
Thomas Ihn Electronic Quantum Transport in Mesoscopic Semiconductor Structures With 90 Illustrations, S in Full Color Springer Contents Part I Introduction to Electron Transport l Electrical conductance
The Physics of Nanoelectronics
The Physics of Nanoelectronics Transport and Fluctuation Phenomena at Low Temperatures Tero T. Heikkilä Low Temperature Laboratory, Aalto University, Finland OXFORD UNIVERSITY PRESS Contents List of symbols
Semiconductor Physical Electronics
Semiconductor Physical Electronics Sheng S. Li Department of Electrical Engineering University of Florida Gainesville, Florida Plenum Press New York and London Contents CHAPTER 1. Classification of Solids
QUANTUM- CLASSICAL ANALOGIES
D. Dragoman M. Dragoman QUANTUM- CLASSICAL ANALOGIES With 78 Figures ^Ü Springer 1 Introduction 1 2 Analogies Between Ballistic Electrons and Electromagnetic Waves 9 2.1 Analog Parameters for Ballistic
List of Comprehensive Exams Topics
List of Comprehensive Exams Topics Mechanics 1. Basic Mechanics Newton s laws and conservation laws, the virial theorem 2. The Lagrangian and Hamiltonian Formalism The Lagrange formalism and the principle
Chapter 3 Properties of Nanostructures
Chapter 3 Properties of Nanostructures In Chapter 2, the reduction of the extent of a solid in one or more dimensions was shown to lead to a dramatic alteration of the overall behavior of the solids. Generally,
Lecture 20: Semiconductor Structures Kittel Ch 17, p , extra material in the class notes
Lecture 20: Semiconductor Structures Kittel Ch 17, p 494-503, 507-511 + extra material in the class notes MOS Structure Layer Structure metal Oxide insulator Semiconductor Semiconductor Large-gap Semiconductor
Correlated 2D Electron Aspects of the Quantum Hall Effect
Correlated 2D Electron Aspects of the Quantum Hall Effect Magnetic field spectrum of the correlated 2D electron system: Electron interactions lead to a range of manifestations 10? = 4? = 2 Resistance (arb.
interband transitions in semiconductors M. Fox, Optical Properties of Solids, Oxford Master Series in Condensed Matter Physics
interband transitions in semiconductors M. Fox, Optical Properties of Solids, Oxford Master Series in Condensed Matter Physics interband transitions in quantum wells Atomic wavefunction of carriers in
Summary lecture VI. with the reduced mass and the dielectric background constant
Summary lecture VI Excitonic binding energy reads with the reduced mass and the dielectric background constant Δ Statistical operator (density matrix) characterizes quantum systems in a mixed state and
Lok С. Lew Yan Voon Morten Willatzen. The k-p Method. Electronic Properties of Semiconductors. Springer
Lok С. Lew Yan Voon Morten Willatzen The k-p Method Electronic Properties of Semiconductors Springer Acronyms xxi 1 Introduction 1 1.1 What Is к p Theory? 1 1.2 Electronic Properties of Semiconductors
Concepts in Spin Electronics
Concepts in Spin Electronics Edited by Sadamichi Maekawa Institutefor Materials Research, Tohoku University, Japan OXFORD UNIVERSITY PRESS Contents List of Contributors xiii 1 Optical phenomena in magnetic
Semiconductor Physical Electronics
Semiconductor Physical Electronics Sheng S. Li Semiconductor Physical Electronics Second Edition With 230 Figures Sheng S. Li Department of Electrical and Computer Engineering University of Florida Gainesville,
P. W. Atkins and R. S. Friedman. Molecular Quantum Mechanics THIRD EDITION
P. W. Atkins and R. S. Friedman Molecular Quantum Mechanics THIRD EDITION Oxford New York Tokyo OXFORD UNIVERSITY PRESS 1997 Introduction and orientation 1 Black-body radiation 1 Heat capacities 2 The
Quantum Phenomena & Nanotechnology (4B5)
Quantum Phenomena & Nanotechnology (4B5) The 2-dimensional electron gas (2DEG), Resonant Tunneling diodes, Hot electron transistors Lecture 11 In this lecture, we are going to look at 2-dimensional electron
Physics of Semiconductors
Physics of Semiconductors 13 th 2016.7.11 Shingo Katsumoto Department of Physics and Institute for Solid State Physics University of Tokyo Outline today Laughlin s justification Spintronics Two current
Electronic Properties of Materials An Introduction for Engineers
Rolf E. Hummel Electronic Properties of Materials An Introduction for Engineers With 219 Illustrations Springer-Verlag Berlin Heidelberg New York Tokyo Contents PARTI Fundamentals of Electron Theory CHAPTER
MODERN PHYSICS Frank J. Blatt Professor of Physics, University of Vermont
MODERN PHYSICS Frank J. Blatt Professor of Physics, University of Vermont McGRAW-HILL, INC. New York St. Louis San Francisco Auckland Bogota Caracas Lisbon London Madrid Mexico Milan Montreal New Delhi
3.23 Electrical, Optical, and Magnetic Properties of Materials
MIT OpenCourseWare http://ocw.mit.edu 3.23 Electrical, Optical, and Magnetic Properties of Materials Fall 2007 For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms.
CONTENTS. vii. CHAPTER 2 Operators 15
CHAPTER 1 Why Quantum Mechanics? 1 1.1 Newtonian Mechanics and Classical Electromagnetism 1 (a) Newtonian Mechanics 1 (b) Electromagnetism 2 1.2 Black Body Radiation 3 1.3 The Heat Capacity of Solids and
Lecture contents. Burstein shift Excitons Interband transitions in quantum wells Quantum confined Stark effect. NNSE 618 Lecture #15
1 Lecture contents Burstein shift Excitons Interband transitions in quantum wells Quantum confined Stark effect Absorption edges in semiconductors Offset corresponds to bandgap Abs. coefficient is orders
No reason one cannot have double-well structures: With MBE growth, can control well thicknesses and spacings at atomic scale.
The story so far: Can use semiconductor structures to confine free carriers electrons and holes. Can get away with writing Schroedinger-like equation for Bloch envelope function to understand, e.g., -confinement
NANO/MICROSCALE HEAT TRANSFER
NANO/MICROSCALE HEAT TRANSFER Zhuomin M. Zhang Georgia Institute of Technology Atlanta, Georgia New York Chicago San Francisco Lisbon London Madrid Mexico City Milan New Delhi San Juan Seoul Singapore
Diode Lasers and Photonic Integrated Circuits
Diode Lasers and Photonic Integrated Circuits L. A. COLDREN S. W. CORZINE University of California Santa Barbara, California A WILEY-INTERSCIENCE PUBLICATION JOHN WILEY & SONS, INC. NEW YORK / CHICHESTER
Magneto-Optical Properties of Quantum Nanostructures
Magneto-optics of nanostructures Magneto-Optical Properties of Quantum Nanostructures Milan Orlita Institute of Physics, Charles University Institute of Physics, Academy of Sciences of the Czech Republic
Upper-barrier excitons: first magnetooptical study
Upper-barrier excitons: first magnetooptical study M. R. Vladimirova, A. V. Kavokin 2, S. I. Kokhanovskii, M. E. Sasin, R. P. Seisyan and V. M. Ustinov 3 Laboratory of Microelectronics 2 Sector of Quantum
ELECTRODYNAMICS OF CONTINUOUS MEDIA
ELECTRODYNAMICS OF CONTINUOUS MEDIA by L. D. LANDAU and E. M. LIFSHITZ Institute of Physical Problems, USSR Academy of Sciences Volume 8 of Course of Theoretical Physics Translated from the Russian by
Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures
Springer Series in Solid-State Sciences 115 Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures Bearbeitet von Jagdeep Shah erweitert 1999. Buch. xvi, 522 S. Hardcover ISBN 978 3
Graphene and Carbon Nanotubes
Graphene and Carbon Nanotubes 1 atom thick films of graphite atomic chicken wire Novoselov et al - Science 306, 666 (004) 100μm Geim s group at Manchester Novoselov et al - Nature 438, 197 (005) Kim-Stormer
Vibrational Spectroscopy of Molecules on Surfaces
Vibrational Spectroscopy of Molecules on Surfaces Edited by John T. Yates, Jr. University of Pittsburgh Pittsburgh, Pennsylvania and Theodore E. Madey National Bureau of Standards Gaithersburg, Maryland
Preface. Preface to the Third Edition. Preface to the Second Edition. Preface to the First Edition. 1 Introduction 1
xi Contents Preface Preface to the Third Edition Preface to the Second Edition Preface to the First Edition v vii viii ix 1 Introduction 1 I GENERAL THEORY OF OPEN QUANTUM SYSTEMS 5 Diverse limited approaches:
Luminescence basics. Slide # 1
Luminescence basics Types of luminescence Cathodoluminescence: Luminescence due to recombination of EHPs created by energetic electrons. Example: CL mapping system Photoluminescence: Luminescence due to
Electronic Processes on Semiconductor Surfaces during Chemisorption
Electronic Processes on Semiconductor Surfaces during Chemisorption T. Wolkenstein Translatedfrom Russian by E. M. Yankovskii Translation edited in part by Roy Morrison CONSULTANTS BUREAU NEW YORK AND
Quantum Mechanics: Fundamentals
Kurt Gottfried Tung-Mow Yan Quantum Mechanics: Fundamentals Second Edition With 75 Figures Springer Preface vii Fundamental Concepts 1 1.1 Complementarity and Uncertainty 1 (a) Complementarity 2 (b) The
SECOND PUBLIC EXAMINATION. Honour School of Physics Part C: 4 Year Course. Honour School of Physics and Philosophy Part C C3: CONDENSED MATTER PHYSICS
A11046W1 SECOND PUBLIC EXAMINATION Honour School of Physics Part C: 4 Year Course Honour School of Physics and Philosophy Part C C3: CONDENSED MATTER PHYSICS TRINITY TERM 2015 Wednesday, 17 June, 2.30
Spin Lifetime Enhancement by Shear Strain in Thin Silicon-on-Insulator Films. Dmitry Osintsev, Viktor Sverdlov, and Siegfried Selberherr
10.1149/05305.0203ecst The Electrochemical Society Spin Lifetime Enhancement by Shear Strain in Thin Silicon-on-Insulator Films Dmitry Osintsev, Viktor Sverdlov, and Siegfried Selberherr Institute for
Electrical Transport in Nanoscale Systems
Electrical Transport in Nanoscale Systems Description This book provides an in-depth description of transport phenomena relevant to systems of nanoscale dimensions. The different viewpoints and theoretical
Les états de bord d un. isolant de Hall atomique
Les états de bord d un isolant de Hall atomique séminaire Atomes Froids 2/9/22 Nathan Goldman (ULB), Jérôme Beugnon and Fabrice Gerbier Outline Quantum Hall effect : bulk Landau levels and edge states
Molecular Electronics
Molecular Electronics An Introduction to Theory and Experiment Juan Carlos Cuevas Universidad Autönoma de Madrid, Spain Elke Scheer Universität Konstanz, Germany 1>World Scientific NEW JERSEY LONDON SINGAPORE
The Oxford Solid State Basics
The Oxford Solid State Basics Steven H. Simon University of Oxford OXFORD UNIVERSITY PRESS Contents 1 About Condensed Matter Physics 1 1.1 What Is Condensed Matter Physics 1 1.2 Why Do We Study Condensed
Index. Index. More information. in this web service Cambridge University Press
absorption edge, 290 absorption of one photon, 285 acceptors, 118 active medium, 287 active region, 293 alkanethiol endgroups, 150 alligator clips, 147 alloy, 68 amino acids, 145 amorphous, 68 amphoteric,
Minimal Update of Solid State Physics
Minimal Update of Solid State Physics It is expected that participants are acquainted with basics of solid state physics. Therefore here we will refresh only those aspects, which are absolutely necessary
Spins and spin-orbit coupling in semiconductors, metals, and nanostructures
B. Halperin Spin lecture 1 Spins and spin-orbit coupling in semiconductors, metals, and nanostructures Behavior of non-equilibrium spin populations. Spin relaxation and spin transport. How does one produce
Lecture 2. Electron states and optical properties of semiconductor nanostructures
Lecture Electron states and optical properties of semiconductor nanostructures Bulk semiconductors Band gap E g Band-gap slavery: only light with photon energy equal to band gap can be generated. Very
Quantum Tunneling and
BEIJING SHANGHAI Quantum Tunneling and Field Electron Emission Theories Shi-Dong Liang Sun Yat-Sen University, China World Scientific NEW JERSEY LONDON SINGAPORE HONG KONG TAIPEI CHENNAI Contents Preface
Lecture 20 - Semiconductor Structures
Lecture 0: Structures Kittel Ch 17, p 494-503, 507-511 + extra material in the class notes MOS Structure metal Layer Structure Physics 460 F 006 Lect 0 1 Outline What is a semiconductor Structure? Created
Spectroscopy of. Semiconductors. Luminescence OXFORD IVAN PELANT. Academy ofsciences of the Czech Republic, Prague JAN VALENTA
Luminescence Spectroscopy of Semiconductors IVAN PELANT Institute ofphysics, v.v.i. Academy ofsciences of the Czech Republic, Prague JAN VALENTA Department of Chemical Physics and Optics Charles University,
PRINCIPLES OF NONLINEAR OPTICAL SPECTROSCOPY
PRINCIPLES OF NONLINEAR OPTICAL SPECTROSCOPY Shaul Mukamel University of Rochester Rochester, New York New York Oxford OXFORD UNIVERSITY PRESS 1995 Contents 1. Introduction 3 Linear versus Nonlinear Spectroscopy
Correlated 2D Electron Aspects of the Quantum Hall Effect
Correlated 2D Electron Aspects of the Quantum Hall Effect Outline: I. Introduction: materials, transport, Hall effects II. III. IV. Composite particles FQHE, statistical transformations Quasiparticle charge
SECOND PUBLIC EXAMINATION. Honour School of Physics Part C: 4 Year Course. Honour School of Physics and Philosophy Part C C3: CONDENSED MATTER PHYSICS
2753 SECOND PUBLIC EXAMINATION Honour School of Physics Part C: 4 Year Course Honour School of Physics and Philosophy Part C C3: CONDENSED MATTER PHYSICS TRINITY TERM 2011 Wednesday, 22 June, 9.30 am 12.30
3-1-2 GaSb Quantum Cascade Laser
3-1-2 GaSb Quantum Cascade Laser A terahertz quantum cascade laser (THz-QCL) using a resonant longitudinal optical (LO) phonon depopulation scheme was successfully demonstrated from a GaSb/AlSb material
Quantum Confinement in Graphene
Quantum Confinement in Graphene from quasi-localization to chaotic billards MMM dominikus kölbl 13.10.08 1 / 27 Outline some facts about graphene quasibound states in graphene numerical calculation of
Electron Correlation
Series in Modern Condensed Matter Physics Vol. 5 Lecture Notes an Electron Correlation and Magnetism Patrik Fazekas Research Institute for Solid State Physics & Optics, Budapest lb World Scientific h Singapore
Lecture 3: Optical Properties of Insulators, Semiconductors, and Metals. 5 nm
Metals Lecture 3: Optical Properties of Insulators, Semiconductors, and Metals 5 nm Course Info Next Week (Sept. 5 and 7) no classes First H/W is due Sept. 1 The Previous Lecture Origin frequency dependence
DIFFRACTION PHYSICS THIRD REVISED EDITION JOHN M. COWLEY. Regents' Professor enzeritus Arizona State University
DIFFRACTION PHYSICS THIRD REVISED EDITION JOHN M. COWLEY Regents' Professor enzeritus Arizona State University 1995 ELSEVIER Amsterdam Lausanne New York Oxford Shannon Tokyo CONTENTS Preface to the first
QUANTUM INTERFERENCE IN SEMICONDUCTOR RINGS
QUANTUM INTERFERENCE IN SEMICONDUCTOR RINGS PhD theses Orsolya Kálmán Supervisors: Dr. Mihály Benedict Dr. Péter Földi University of Szeged Faculty of Science and Informatics Doctoral School in Physics
The Physics of Semiconductors
The Physics of Semiconductors with applications to optoelectronic devices KEVIN F. BRENNAN CAMBRIDGE UNIVERSITY PRESS Contents Preface page xi Chapter1 Basic Concepts in Quantum Mechanics 1.1 Introduction
(DPHY 21) 1) a) Discuss the propagation of light in conducting surface. b) Discuss about the metallic reflection at oblique incidence.
(DPHY 21) ASSIGNMENT - 1, MAY - 2015. PAPER- V : ELECTROMAGNETIC THEORY AND MODERN OPTICS 1) a) Discuss the propagation of light in conducting surface. b) Discuss about the metallic reflection at oblique
Observation of neutral modes in the fractional quantum hall effect regime. Aveek Bid
Observation of neutral modes in the fractional quantum hall effect regime Aveek Bid Department of Physics, Indian Institute of Science, Bangalore Nature 585 466 (2010) Quantum Hall Effect Magnetic field
Lectures: Condensed Matter II 1 Electronic Transport in Quantum dots 2 Kondo effect: Intro/theory. 3 Kondo effect in nanostructures
Lectures: Condensed Matter II 1 Electronic Transport in Quantum dots 2 Kondo effect: Intro/theory. 3 Kondo effect in nanostructures Luis Dias UT/ORNL Lectures: Condensed Matter II 1 Electronic Transport
Principles of Electron Tunneling Spectroscopy
Principles of Electron Tunneling Spectroscopy Second Edition E. L. Wolf Polytechnic Institute of New York University, USA OXFORD UNIVERSITY PRESS Contents 1 Introduction 1.1 Concepts of quantum mechanical
Zeeman splitting of single semiconductor impurities in resonant tunneling heterostructures
Superlattices and Microstructures, Vol. 2, No. 4, 1996 Zeeman splitting of single semiconductor impurities in resonant tunneling heterostructures M. R. Deshpande, J. W. Sleight, M. A. Reed, R. G. Wheeler
THE ABSORPTION OF ELECTROMAGNETIC RADIATION IN A QUANTUM WIRE
NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 04, 5 3, P. 378 383 THE ABSORPTION OF ELECTROMAGNETIC RADIATION IN A QUANTUM WIRE PACS 63.0.Kr,78.67.-n V. V. Karpunin,, V. A. Margulis Mordovian State Pedagogical
Surfaces, Interfaces, and Layered Devices
Surfaces, Interfaces, and Layered Devices Building blocks for nanodevices! W. Pauli: God made solids, but surfaces were the work of Devil. Surfaces and Interfaces 1 Interface between a crystal and vacuum
Introduction to Semiconductor Integrated Optics
Introduction to Semiconductor Integrated Optics Hans P. Zappe Artech House Boston London Contents acknowledgments reface itroduction Chapter 1 Basic Electromagnetics 1 1.1 General Relationships 1 1.1.1
Terahertz Lasers Based on Intersubband Transitions
Terahertz Lasers Based on Intersubband Transitions Personnel B. Williams, H. Callebaut, S. Kumar, and Q. Hu, in collaboration with J. Reno Sponsorship NSF, ARO, AFOSR,and NASA Semiconductor quantum wells
Tunnelling spectroscopy of low-dimensional states
Semicond. Sci. Technol. 11 (1996) 1 16. Printed in the UK TOPICAL REVIEW Tunnelling spectroscopy of low-dimensional states Institut für Festkörperelektronik 362, Technische Universität Wien, Floragasse
OPTICAL PROPERTIES AND SPECTROSCOPY OF NANOAAATERIALS. Jin Zhong Zhang. World Scientific TECHNISCHE INFORMATIONSBIBLIOTHEK
OPTICAL PROPERTIES AND SPECTROSCOPY OF NANOAAATERIALS Jin Zhong Zhang University of California, Santa Cruz, USA TECHNISCHE INFORMATIONSBIBLIOTHEK Y World Scientific NEW JERSEY. t'on.don SINGAPORE «'BEIJING
Fundamentals and New Frontiers of Bose Einstein Condensation
Contents Preface v 1. Fundamentals of Bose Einstein Condensation 1 1.1 Indistinguishability of Identical Particles.......... 1 1.2 Ideal Bose Gas in a Uniform System............ 3 1.3 Off-Diagonal Long-Range
Image courtesy of Keith Schwab http://www.lbl.gov/science-articles/archive/afrd Articles/Archive/AFRD-quantum-logic.html http://www.wmi.badw.de/sfb631/tps/dqd2.gif http://qist.lanl.gov/qcomp_map.shtml
Quantum Condensed Matter Physics Lecture 9
Quantum Condensed Matter Physics Lecture 9 David Ritchie QCMP Lent/Easter 2018 http://www.sp.phy.cam.ac.uk/drp2/home 9.1 Quantum Condensed Matter Physics 1. Classical and Semi-classical models for electrons
QUANTUM WELL OPTICAL SWITCHING DEVICES. DAVID A. B. MILLER Rm. 4B-401, AT&T Bell Laboratories Holmdel, NJ USA
QUANTUM WELL OPTICAL SWITCHING DEVICES DAVID A. B. MILLER Rm. 4B-401, AT&T Bell Laboratories Holmdel, NJ07733-3030 USA ABSTRACT These lecture notes summarize the basic physics of quantum wells for optical
From nanophysics research labs to cell phones. Dr. András Halbritter Department of Physics associate professor
From nanophysics research labs to cell phones Dr. András Halbritter Department of Physics associate professor Curriculum Vitae Birth: 1976. High-school graduation: 1994. Master degree: 1999. PhD: 2003.
Coulomb Drag in Graphene
Graphene 2017 Coulomb Drag in Graphene -Toward Exciton Condensation Philip Kim Department of Physics, Harvard University Coulomb Drag Drag Resistance: R D = V 2 / I 1 Onsager Reciprocity V 2 (B)/ I 1 =