Semiconductor Physical Electronics

Size: px
Start display at page:

Download "Semiconductor Physical Electronics"

Transcription

1 Semiconductor Physical Electronics

2 Sheng S. Li Semiconductor Physical Electronics Second Edition With 230 Figures

3 Sheng S. Li Department of Electrical and Computer Engineering University of Florida Gainesville, FL USA Library of Congress Control Number: ISBN 10: ISBN 13: Printed on acid-free paper. C 2006 Springer Science+Business Media, LLC All rights reserved. This work may not be translated or copied in whole or in part without the written permission of the publisher (Springer Science+Business Media, LLC, 233 Spring Street, New York, NY 10013, USA), except for brief excerpts in connection with reviews or scholarly analysis. Use in connection with any form of information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed is forbidden. The use in this publication of trade names, trademarks, service marks, and similar terms, even if they are not identified as such, is not to be taken as an expression of opinion as to whether or not they are subject to proprietary rights. Printed in the United States of America. (TB/EB) springer.com

4 Preface The purpose of the second edition of this book is to update the developments in various semiconductor and photonic devices since the first edition was published in Due to the advances in semiconductor technologies over the past decade, many new semiconductor devices have emerged and entered the marketplace. As a result, a significant portion of the material covered in the original book has been revised and updated. The intent of this book is to provide the reader with a self-contained treatment of the fundamental physics of semiconductor materials and devices. The author has used this book for a one-year graduate course sequence taught for many years in the Department of Electrical and Computer Engineering of the University of Florida. It is intended for first-year graduate students who majored in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science and engineering, and physics have also taken this course sequence. This book may also be used as a general reference for processing and device engineers working in the semiconductor industry. The present volume covers relevant topics of basic solid-state physics and fundamentals of semiconductor materials and devices and their applications. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, one-electron energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal semiconductor contacts and devices, p-n junction diodes, bipolar junction transistors (BJTs), heterojunction bipolar transistors (HBTs), MOS devices (MOSFETs, CCDs), photonic devices (solar cells, LEDs, and LDs), quantum-effect devices (QWIPs, QDIPs, QW-LDs), and high-speed III-V semiconductor devices (MESFETs, HEMTs, HETs, RTDs, TEDs). The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and materials scientists with more background on device applications, and device engineers with a broader knowledge of fundamental semiconductor physics. The contents of the book are divided into two parts. In Part I (Chapters 1 9), the subjects of fundamental solid-state and semiconductor physics that are essential for understanding the physical, optical, and electronic properties of semiconductor v

5 vi Preface materials are presented. Part II (Chapters 10 16) deals with the basic device physics, device structures, operation principles, general characteristics, and applications of various semiconductor and photonic devices. Chapter 1 presents the classification of solids, crystal structures, concept of reciprocal lattice and Brillouin zone, Miller indices, crystal bindings, and defects in solids. Chapter 2 deals with the thermal properties and lattice dynamics of crystalline solids. The lattice-specific heat, the dispersion relation of lattice vibrations, and the concept of phonons are also described. Chapter 3 is concerned with the three basic semiconductor statistics. Derivation of Maxwell Boltzmann (M-B), Bose Einstein (B-E), and Fermi Dirac (F-D) distribution functions are given in this chapter. Chapter 4 describes the elements of quantum concepts and wave mechanics, the one-electron energy band theory, the effective mass concept for electrons and holes in a semiconductor, the energy band structures for elemental and compound semiconductors, and the density-of-states functions for bulk semiconductors and low-dimensional systems such as superlattices, quantum wells, and dots. Chapter 5 deals with the equilibrium properties of intrinsic and extrinsic semiconductors. Derivation of general expressions for electron and hole densities, and discussion of the shallow- and deep-level impurities in semiconductors are given in this chapter. Chapter 6 presents the recombination mechanisms and excess carrier phenomenon in a semiconductor. The basic semiconductor equations, which govern the transport of excess carriers in a semiconductor, are described in this chapter. Chapter 7 deals with the derivation of transport coefficients using the Boltzmann equation and relaxation time approximation. The low-field galvanomagnetic, thermoelectric, and thermomagnetic effects in n-type semiconductors are described in this chapter. Chapter 8 is concerned with the scattering mechanisms and the derivation of electron mobility in n-type semiconductors. The relaxation time and mobility expressions for the ionized and neutral impurity scatterings and acoustical and optical phonon scatterings are derived. Chapter 9 presents the optical properties and photoelectric effects in semiconductors. The fundamental optical absorption and free-carrier absorption processes as well as the photoelectric effects such as photoconductive, photovoltaic, and photomagnetoelectric effects in a semiconductor are depicted. Chapter 10 deals with the basic theories and relevant electronic properties of metal semiconductor contacts and their applications. The current conduction in a Schottky barrier diode, methods of determining and enhancing the barrier heights in a Schottky contact, and ohmic contacts in a semiconductor are presented. Chapter 11 presents the basic device theories and characteristics of a p-n junction diode. The p-n heterojunction diodes and junction-field effect transistors (JFETs) are also discussed. Chapter 12 is concerned with the device physics, device structures, and characteristics of various photovoltaic devices (solar cells), photodetectors, and their applications. The solid-state light-emitting devices, which include the light-emitting diodes (LEDs) and semiconductor diode lasers (LDs) are described in Chapter 13. Recent advances in LEDs and LDs and their applications are given in this chapter. Chapter 14 deals with the basic device physics, modeling, and electrical characteristics of bipolar junction transistors (BJTs), p-n-p-n fourlayer devices (SCRs, thyristers), and heterojunction bipolar transistors (HBTs).

6 Preface vii Chapter 15 presents the silicon-based metal-oxide-semiconductor (MOS) devices. The device physics and characteristics for both metal-oxide-semiconductor field-effect transistors (MOSFETs) and charge-coupled devices (CCDs) are described. Finally, high-speed and high-frequency devices using GaAs and other III-V compound semiconductors are discussed in Chapter 16. The GaAs-based metal semiconductor field-effect transistors (MESFETs), high-electron-mobility transistors (HEMTs), hot-electron transistors (HETs), resonant tunneling diodes (NTDs) and transferred electron devices (TEDs) are described in this chapter. Throughout the text, the author stresses the importance of basic semiconductor physics and its relation to the properties and performance of various semiconductor devices. Without a good grasp of the physical concepts and a good understanding of the underlying device physics, it would be difficult to tackle the problems encountered in material growth, device processing and fabrication, device characterization, and modeling. The materials presented in this book should provide a solid foundation for understanding the fundamental limitations of various semiconductor materials and devices. This book is especially useful for those who are interested in strengthening and broadening their basic knowledge of solid-state and semiconductor device physics. The author would like to acknowledge his wife, Julie Wen-Fu Shih, for her support, love, and encouragement during the course of preparing this second edition.

7 Contents Preface... v 1. Classification of Solids and Crystal Structure Introduction The Bravais Lattice The Crystal Structure Miller Indices and Crystal Planes The Reciprocal Lattice and Brillouin Zone Types of Crystal Bindings Defects in a Crystalline Solid Problems Bibliography Lattice Dynamics Introduction The One-Dimensional Linear Chain Dispersion Relation for a Three-Dimensional Lattice The Concept of Phonons The Density of States and Lattice Spectrum Lattice Specific Heat Problems References Bibliography Semiconductor Statistics Introduction Maxwell Boltzmann Statistics Fermi Dirac Statistics Bose Einstein Statistics Statistics for the Shallow-Impurity States in a Semiconductor ix

8 x Contents Problems Bibliography Energy Band Theory Introduction Basic Quantum Concepts and Wave Mechanics The Bloch Floquet Theorem The Kronig Penney Model The Nearly Free Electron Approximation The Tight-Binding Approximation Energy Band Structures for Some Semiconductors The Effective Mass Concept for Electrons and Holes Energy Band Structures and Density of States for Low-Dimensional Systems Problems References Bibliography Equilibrium Properties of Semiconductors Introduction Densities of Electrons and Holes in a Semiconductor Intrinsic Semiconductors Extrinsic Semiconductors Ionization Energies of Shallow- and Deep-Level Impurities Hall Effect, Electrical Conductivity, and Hall Mobility Heavy Doping Effects in a Degenerate Semiconductor Problems References Bibliography Excess Carrier Phenomenon in Semiconductors Introduction Nonradiative Recombination: The Shockley Read Hall Model Band-to-Band Radiative Recombination Band-to-Band Auger Recombination Basic Semiconductor Equations The Charge-Neutrality Equation The Haynes Shockley Experiment The Photoconductivity Decay Experiment Surface States and Surface Recombination Velocity Deep-Level Transient Spectroscopy Technique Surface Photovoltage Technique Problems References Bibliography

9 Contents xi 7. Transport Properties of Semiconductors Introduction Galvanomagnetic, Thermoelectric, and Thermomagnetic Effects Boltzmann Transport Equation Derivation of Transport Coefficients for n-type Semiconductors Transport Coefficients for the Mixed Conduction Case Transport Coefficients for Some Semiconductors Problems References Bibliography Scattering Mechanisms and Carrier Mobilities in Semiconductors Introduction Differential Scattering Cross-Section Ionized Impurity Scattering Neutral Impurity Scattering Acoustical Phonon Scattering Optical Phonon Scattering Scattering by Dislocations Electron and Hole Mobilities in Semiconductors Hot-Electron Effects in a Semiconductor Problems References Bibliography Optical Properties and Photoelectric Effects Introduction Optical Constants of a Solid Free-Carrier Absorption Process Fundamental Absorption Process The Photoconductivity Effect The Photovoltaic (Dember) Effect The Photomagnetoelectric Effect Problems References Bibliography Metal Semiconductor Contacts Introduction Metal Work Function and Schottky Effect Thermionic Emission Theory Ideal Schottky Contact Current Flow in a Schottky Diode

10 xii Contents 10.6 Current Voltage Characteristics of a Silicon and a GaAs Schottky Diode Determination of Schottky Barrier Height Enhancement of Effective Barrier Height Applications of Schottky Diodes Ohmic Contacts in Semiconductors Problems References Bibliography p-n Junction Diodes Introduction Equilibrium Properties of a p-n Junction Diode p-n Junction Diode Under Bias Conditions Minority Carrier Distribution and Current Flow Diffusion Capacitance and Conductance Minority Carrier Storage and Transient Behavior Zener and Avalanche Breakdowns Tunnel Diodes p-n Heterojunction Diodes Junction Field-Effect Transistors Problems References Bibliography Solar Cells and Photodetectors Introduction Photovoltaic Devices (Solar Cells) Photodetectors Problems References Bibliography Light-Emitting Devices Introduction Device Physics, Structures, and Characteristics of LEDs LED Materials and Technologies Principles of Semiconductor LDs Laser Diode (LD) Materials and Technologies Problems References Bibliography

11 Contents xiii 14. Bipolar Junction Transistors Introduction Basic Device Structures and Modes of Operation Current Voltage Characteristics Current Gain, Base Transport Factor, and Emitter Injection Efficiency Modeling of a Bipolar Junction Transistor Switching and Frequency Response Advanced Bipolar Junction Transistors Thyristors Heterojunction Bipolar Transistors Problems References Bibliography Metal-Oxide-Semiconductor Field-Effect Transistors Introduction An Ideal Metal-Oxide-Semiconductor System Oxide Charges and Interface Traps MOS Field-Effect Transistors SOI MOSFETS Charge-Coupled Devices Problems References Bibliography High-Speed III-V Semiconductor Devices Introduction Metal Semiconductor Field-Effect Transistors High Electron Mobility Transistors Hot-Electron Transistors Resonant Tunneling Devices Transferred-Electron Devices Problems References Bibliography Solutions to Selected Problems Appendix Index

Sheng S. Li. Semiconductor Physical Electronics. Second Edition. With 230 Figures. 4) Springer

Sheng S. Li. Semiconductor Physical Electronics. Second Edition. With 230 Figures. 4) Springer Sheng S. Li Semiconductor Physical Electronics Second Edition With 230 Figures 4) Springer Contents Preface 1. Classification of Solids and Crystal Structure 1 1.1 Introduction 1 1.2 The Bravais Lattice

More information

Semiconductor Physical Electronics

Semiconductor Physical Electronics Semiconductor Physical Electronics Sheng S. Li Department of Electrical Engineering University of Florida Gainesville, Florida Plenum Press New York and London Contents CHAPTER 1. Classification of Solids

More information

Semiconductor Physical Electronics

Semiconductor Physical Electronics Semiconductor Physical Electronics MICRODEVICES Physics and Fabrication Technologies Series Editors: Ivor Brodie and Julius J. Murayt SRI International Menlo Park, California ELECTRON AND ION OPTICS Miklos

More information

The Physics of Semiconductors

The Physics of Semiconductors The Physics of Semiconductors with applications to optoelectronic devices KEVIN F. BRENNAN CAMBRIDGE UNIVERSITY PRESS Contents Preface page xi Chapter1 Basic Concepts in Quantum Mechanics 1.1 Introduction

More information

Electronic and Optoelectronic Properties of Semiconductor Structures

Electronic and Optoelectronic Properties of Semiconductor Structures Electronic and Optoelectronic Properties of Semiconductor Structures Jasprit Singh University of Michigan, Ann Arbor CAMBRIDGE UNIVERSITY PRESS CONTENTS PREFACE INTRODUCTION xiii xiv 1.1 SURVEY OF ADVANCES

More information

EE 3329 Electronic Devices Syllabus ( Extended Play )

EE 3329 Electronic Devices Syllabus ( Extended Play ) EE 3329 - Electronic Devices Syllabus EE 3329 Electronic Devices Syllabus ( Extended Play ) The University of Texas at El Paso The following concepts can be part of the syllabus for the Electronic Devices

More information

Current mechanisms Exam January 27, 2012

Current mechanisms Exam January 27, 2012 Current mechanisms Exam January 27, 2012 There are four mechanisms that typically cause currents to flow: thermionic emission, diffusion, drift, and tunneling. Explain briefly which kind of current mechanisms

More information

The Materials Science of Semiconductors

The Materials Science of Semiconductors The Materials Science of Semiconductors Angus Rockett The Materials Science of Semiconductors Angus Rockett University of Illinois 201a Materials Science and Engineering Building 1304 West Green Street

More information

SOLID STATE PHYSICS. Second Edition. John Wiley & Sons. J. R. Hook H. E. Hall. Department of Physics, University of Manchester

SOLID STATE PHYSICS. Second Edition. John Wiley & Sons. J. R. Hook H. E. Hall. Department of Physics, University of Manchester SOLID STATE PHYSICS Second Edition J. R. Hook H. E. Hall Department of Physics, University of Manchester John Wiley & Sons CHICHESTER NEW YORK BRISBANE TORONTO SINGAPORE Contents Flow diagram Inside front

More information

Metals: the Drude and Sommerfeld models p. 1 Introduction p. 1 What do we know about metals? p. 1 The Drude model p. 2 Assumptions p.

Metals: the Drude and Sommerfeld models p. 1 Introduction p. 1 What do we know about metals? p. 1 The Drude model p. 2 Assumptions p. Metals: the Drude and Sommerfeld models p. 1 Introduction p. 1 What do we know about metals? p. 1 The Drude model p. 2 Assumptions p. 2 The relaxation-time approximation p. 3 The failure of the Drude model

More information

ET3034TUx Utilization of band gap energy

ET3034TUx Utilization of band gap energy ET3034TUx - 3.3.1 - Utilization of band gap energy In the last two weeks we have discussed the working principle of a solar cell and the external parameters that define the performance of a solar cell.

More information

Solid Surfaces, Interfaces and Thin Films

Solid Surfaces, Interfaces and Thin Films Hans Lüth Solid Surfaces, Interfaces and Thin Films Fifth Edition With 427 Figures.2e Springer Contents 1 Surface and Interface Physics: Its Definition and Importance... 1 Panel I: Ultrahigh Vacuum (UHV)

More information

SpringerBriefs in Mathematics

SpringerBriefs in Mathematics SpringerBriefs in Mathematics For further volumes: http://www.springer.com/series/10030 George A. Anastassiou Advances on Fractional Inequalities 123 George A. Anastassiou Department of Mathematical Sciences

More information

PHYSICS OF SEMICONDUCTORS AND THEIR HETEROSTRUCTURES

PHYSICS OF SEMICONDUCTORS AND THEIR HETEROSTRUCTURES PHYSICS OF SEMICONDUCTORS AND THEIR HETEROSTRUCTURES Jasprit Singh University of Michigan McGraw-Hill, Inc. New York St. Louis San Francisco Auckland Bogota Caracas Lisbon London Madrid Mexico Milan Montreal

More information

CONTENTS. vii. CHAPTER 2 Operators 15

CONTENTS. vii. CHAPTER 2 Operators 15 CHAPTER 1 Why Quantum Mechanics? 1 1.1 Newtonian Mechanics and Classical Electromagnetism 1 (a) Newtonian Mechanics 1 (b) Electromagnetism 2 1.2 Black Body Radiation 3 1.3 The Heat Capacity of Solids and

More information

Appendix 1: List of symbols

Appendix 1: List of symbols Appendix 1: List of symbols Symbol Description MKS Units a Acceleration m/s 2 a 0 Bohr radius m A Area m 2 A* Richardson constant m/s A C Collector area m 2 A E Emitter area m 2 b Bimolecular recombination

More information

Semiconductor Module

Semiconductor Module Semiconductor Module Optics Seminar July 18, 2018 Yosuke Mizuyama, Ph.D. COMSOL, Inc. The COMSOL Product Suite Governing Equations Semiconductor Schrödinger Equation Semiconductor Optoelectronics, FD Semiconductor

More information

Semiconductor device structures are traditionally divided into homojunction devices

Semiconductor device structures are traditionally divided into homojunction devices 0. Introduction: Semiconductor device structures are traditionally divided into homojunction devices (devices consisting of only one type of semiconductor material) and heterojunction devices (consisting

More information

Basic Semiconductor Physics

Basic Semiconductor Physics Chihiro Hamaguchi Basic Semiconductor Physics With 177 Figures and 25 Tables Springer 1. Energy Band Structures of Semiconductors 1 1.1 Free-Electron Model 1 1.2 Bloch Theorem 3 1.3 Nearly Free Electron

More information

1.9.5 Stoichiometry, Nonstoichiometry, and Defect Structures 75

1.9.5 Stoichiometry, Nonstoichiometry, and Defect Structures 75 Chapter 1 Elementary Materials Science Concepts 3 1.1 Atomic Structure and Atomic Number 3 1.2 Atomic Mass and Mole 8 1.3 Bonding and Types of Solids 9 1.3.1 Molecules and General Bonding Principles 9

More information

Avalanche breakdown. Impact ionization causes an avalanche of current. Occurs at low doping

Avalanche breakdown. Impact ionization causes an avalanche of current. Occurs at low doping Avalanche breakdown Impact ionization causes an avalanche of current Occurs at low doping Zener tunneling Electrons tunnel from valence band to conduction band Occurs at high doping Tunneling wave decays

More information

Concepts & Equations. Applications: Devices

Concepts & Equations. Applications: Devices Concepts & Equations Applications: Devices Concepts & Equations Applications: Devices Current = (charge) x (velocity) Ch1-4 Ch5-6 Concepts & Equations Applications: Devices Concepts & Equations Ch1 Landscape

More information

Metal Semiconductor Contacts

Metal Semiconductor Contacts Metal Semiconductor Contacts The investigation of rectification in metal-semiconductor contacts was first described by Braun [33-35], who discovered in 1874 the asymmetric nature of electrical conduction

More information

MODERN PHYSICS Frank J. Blatt Professor of Physics, University of Vermont

MODERN PHYSICS Frank J. Blatt Professor of Physics, University of Vermont MODERN PHYSICS Frank J. Blatt Professor of Physics, University of Vermont McGRAW-HILL, INC. New York St. Louis San Francisco Auckland Bogota Caracas Lisbon London Madrid Mexico Milan Montreal New Delhi

More information

Electronic Properties of Materials An Introduction for Engineers

Electronic Properties of Materials An Introduction for Engineers Rolf E. Hummel Electronic Properties of Materials An Introduction for Engineers With 219 Illustrations Springer-Verlag Berlin Heidelberg New York Tokyo Contents PARTI Fundamentals of Electron Theory CHAPTER

More information

Nanoscale Energy Transport and Conversion A Parallel Treatment of Electrons, Molecules, Phonons, and Photons

Nanoscale Energy Transport and Conversion A Parallel Treatment of Electrons, Molecules, Phonons, and Photons Nanoscale Energy Transport and Conversion A Parallel Treatment of Electrons, Molecules, Phonons, and Photons Gang Chen Massachusetts Institute of Technology OXFORD UNIVERSITY PRESS 2005 Contents Foreword,

More information

QUANTUM WELLS, WIRES AND DOTS

QUANTUM WELLS, WIRES AND DOTS QUANTUM WELLS, WIRES AND DOTS Theoretical and Computational Physics of Semiconductor Nanostructures Second Edition Paul Harrison The University of Leeds, UK /Cf}\WILEY~ ^INTERSCIENCE JOHN WILEY & SONS,

More information

Index. buried oxide 35, 44 51, 89, 238 buried channel 56

Index. buried oxide 35, 44 51, 89, 238 buried channel 56 Index A acceptor 275 accumulation layer 35, 45, 57 activation energy 157 Auger electron spectroscopy (AES) 90 anode 44, 46, 55 9, 64, 182 anode current 45, 49, 65, 77, 106, 128 anode voltage 45, 52, 65,

More information

8.1 Drift diffusion model

8.1 Drift diffusion model 8.1 Drift diffusion model Advanced theory 1 Basic Semiconductor Equations The fundamentals of semiconductor physic are well described by tools of quantum mechanic. This point of view gives us a model of

More information

Nature of Lesson (Lecture/Tutorial) H3 WK No. Day/ Date. Remarks. Duration. 4.00pm 6.30pm ALL. 2.5 hours. Introduction to Semiconductors Lecture 01

Nature of Lesson (Lecture/Tutorial) H3 WK No. Day/ Date. Remarks. Duration. 4.00pm 6.30pm ALL. 2.5 hours. Introduction to Semiconductors Lecture 01 JANUARY 2018 INTAKE Subject : Semiconductor Physics & Devices Venue : HCI Schedule : Mondays for Tutorial (3pm 5pm / 5pm 7pm) or Tuesdays for Tutorial (3pm 5pm / 5pm 7pm) and Thursdays for Lecture (4pm-6.30

More information

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00 1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions.

More information

CHAPTER 4: P-N P N JUNCTION Part 2. M.N.A. Halif & S.N. Sabki

CHAPTER 4: P-N P N JUNCTION Part 2. M.N.A. Halif & S.N. Sabki CHAPTER 4: P-N P N JUNCTION Part 2 Part 2 Charge Storage & Transient Behavior Junction Breakdown Heterojunction CHARGE STORAGE & TRANSIENT BEHAVIOR Once injected across the junction, the minority carriers

More information

9. Semiconductor Devices /Phonons

9. Semiconductor Devices /Phonons Technische Universität Graz Institute of Solid State Physics 9. Semiconductor Devices /Phonons Oct 29, 2018 p and n profiles p n V bi ~ 1 V E c W ~ 1 m E F E max ~ 10 4 V/cm ev bi E v p Ev E F Nv exp kt

More information

Semiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr.

Semiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr. Semiconductor Devices and Circuits Fall 2003 Midterm Exam Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering Name: Mat. -Nr.: Guidelines: Duration of the Midterm: 1 hour The exam is a closed

More information

Conductivity and Semi-Conductors

Conductivity and Semi-Conductors Conductivity and Semi-Conductors J = current density = I/A E = Electric field intensity = V/l where l is the distance between two points Metals: Semiconductors: Many Polymers and Glasses 1 Electrical Conduction

More information

Machine Tool Vibrations and Cutting Dynamics

Machine Tool Vibrations and Cutting Dynamics Machine Tool Vibrations and Cutting Dynamics Brandon C. Gegg l Albert C.J. Luo C. Steve Suh Machine Tool Vibrations and Cutting Dynamics Brandon C. Gegg Dynacon Inc. Winches and Handling Systems 831 Industrial

More information

Semiconductor Physics fall 2012 problems

Semiconductor Physics fall 2012 problems Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each

More information

Classification of Solids

Classification of Solids Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples

More information

Review of Semiconductor Physics

Review of Semiconductor Physics Solid-state physics Review of Semiconductor Physics The daunting task of solid state physics Quantum mechanics gives us the fundamental equation The equation is only analytically solvable for a handful

More information

ECE335F: Electronic Devices Syllabus. Lecture*

ECE335F: Electronic Devices Syllabus. Lecture* Lecture 1 - Introduction: Course Overview 1 - Introduction: Course Overview 2 1 Crystal Structure of Solids 2 1 Crystal Structure of Solids 1.1 Semiconductor materials 1.1 Semiconductor materials 1.2 Types

More information

KATIHAL FİZİĞİ MNT-510

KATIHAL FİZİĞİ MNT-510 KATIHAL FİZİĞİ MNT-510 YARIİLETKENLER Kaynaklar: Katıhal Fiziği, Prof. Dr. Mustafa Dikici, Seçkin Yayıncılık Katıhal Fiziği, Şakir Aydoğan, Nobel Yayıncılık, Physics for Computer Science Students: With

More information

Course overview. Me: Dr Luke Wilson. The course: Physics and applications of semiconductors. Office: E17 open door policy

Course overview. Me: Dr Luke Wilson. The course: Physics and applications of semiconductors. Office: E17 open door policy Course overview Me: Dr Luke Wilson Office: E17 open door policy email: luke.wilson@sheffield.ac.uk The course: Physics and applications of semiconductors 10 lectures aim is to allow time for at least one

More information

Minimal Update of Solid State Physics

Minimal Update of Solid State Physics Minimal Update of Solid State Physics It is expected that participants are acquainted with basics of solid state physics. Therefore here we will refresh only those aspects, which are absolutely necessary

More information

Physics of Semiconductors 8 th

Physics of Semiconductors 8 th Physics of Semiconductors 8 th 2016.6.6 Shingo Katsumoto Department of Physics, Institute for Solid State Physics University of Tokyo Review of pn junction Estimation of builtin potential Depletion layer

More information

Session 5: Solid State Physics. Charge Mobility Drift Diffusion Recombination-Generation

Session 5: Solid State Physics. Charge Mobility Drift Diffusion Recombination-Generation Session 5: Solid State Physics Charge Mobility Drift Diffusion Recombination-Generation 1 Outline A B C D E F G H I J 2 Mobile Charge Carriers in Semiconductors Three primary types of carrier action occur

More information

CME 300 Properties of Materials. ANSWERS: Homework 9 November 26, As atoms approach each other in the solid state the quantized energy states:

CME 300 Properties of Materials. ANSWERS: Homework 9 November 26, As atoms approach each other in the solid state the quantized energy states: CME 300 Properties of Materials ANSWERS: Homework 9 November 26, 2011 As atoms approach each other in the solid state the quantized energy states: are split. This splitting is associated with the wave

More information

NANO/MICROSCALE HEAT TRANSFER

NANO/MICROSCALE HEAT TRANSFER NANO/MICROSCALE HEAT TRANSFER Zhuomin M. Zhang Georgia Institute of Technology Atlanta, Georgia New York Chicago San Francisco Lisbon London Madrid Mexico City Milan New Delhi San Juan Seoul Singapore

More information

Introduction to Semiconductor Integrated Optics

Introduction to Semiconductor Integrated Optics Introduction to Semiconductor Integrated Optics Hans P. Zappe Artech House Boston London Contents acknowledgments reface itroduction Chapter 1 Basic Electromagnetics 1 1.1 General Relationships 1 1.1.1

More information

Chapter 1 Overview of Semiconductor Materials and Physics

Chapter 1 Overview of Semiconductor Materials and Physics Chapter 1 Overview of Semiconductor Materials and Physics Professor Paul K. Chu Conductivity / Resistivity of Insulators, Semiconductors, and Conductors Semiconductor Elements Period II III IV V VI 2 B

More information

ESE 372 / Spring 2013 / Lecture 5 Metal Oxide Semiconductor Field Effect Transistor

ESE 372 / Spring 2013 / Lecture 5 Metal Oxide Semiconductor Field Effect Transistor Metal Oxide Semiconductor Field Effect Transistor V G V G 1 Metal Oxide Semiconductor Field Effect Transistor We will need to understand how this current flows through Si What is electric current? 2 Back

More information

Schottky Rectifiers Zheng Yang (ERF 3017,

Schottky Rectifiers Zheng Yang (ERF 3017, ECE442 Power Semiconductor Devices and Integrated Circuits Schottky Rectifiers Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Schottky Rectifier Structure 2 Metal-Semiconductor Contact The work function

More information

ELECTRONS AND PHONONS IN SEMICONDUCTOR MULTILAYERS

ELECTRONS AND PHONONS IN SEMICONDUCTOR MULTILAYERS ELECTRONS AND PHONONS IN SEMICONDUCTOR MULTILAYERS Second Edition B.K. RIDLEY University of Essex CAMBRIDGE UNIVERSITY PRESS Contents Preface Introduction 1 Simple Models of the Electron-Phonon Interaction

More information

3. Two-dimensional systems

3. Two-dimensional systems 3. Two-dimensional systems Image from IBM-Almaden 1 Introduction Type I: natural layered structures, e.g., graphite (with C nanostructures) Type II: artificial structures, heterojunctions Great technological

More information

Luminescence Process

Luminescence Process Luminescence Process The absorption and the emission are related to each other and they are described by two terms which are complex conjugate of each other in the interaction Hamiltonian (H er ). In an

More information

Statistics for Social and Behavioral Sciences

Statistics for Social and Behavioral Sciences Statistics for Social and Behavioral Sciences Advisors: S.E. Fienberg W.J. van der Linden For other titles published in this series, go to http://www.springer.com/series/3463 Haruo Yanai Kei Takeuchi

More information

Surfaces, Interfaces, and Layered Devices

Surfaces, Interfaces, and Layered Devices Surfaces, Interfaces, and Layered Devices Building blocks for nanodevices! W. Pauli: God made solids, but surfaces were the work of Devil. Surfaces and Interfaces 1 Interface between a crystal and vacuum

More information

UNIT I: Electronic Materials.

UNIT I: Electronic Materials. SIDDHARTH INSTITUTE OF ENGINEERING & TECHNOLOGY :: PUTTUR Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK (DESCRIPTIVE) Subject with Code: SEMICONDUCTOR PHYSICS (18HS0851) Course & Branch: B.Tech

More information

Controlled Markov Processes and Viscosity Solutions

Controlled Markov Processes and Viscosity Solutions Controlled Markov Processes and Viscosity Solutions Wendell H. Fleming, H. Mete Soner Controlled Markov Processes and Viscosity Solutions Second Edition Wendell H. Fleming H.M. Soner Div. Applied Mathematics

More information

Schottky Diodes (M-S Contacts)

Schottky Diodes (M-S Contacts) Schottky Diodes (M-S Contacts) Three MITs of the Day Band diagrams for ohmic and rectifying Schottky contacts Similarity to and difference from bipolar junctions on electrostatic and IV characteristics.

More information

Quantum and Non-local Transport Models in Crosslight Device Simulators. Copyright 2008 Crosslight Software Inc.

Quantum and Non-local Transport Models in Crosslight Device Simulators. Copyright 2008 Crosslight Software Inc. Quantum and Non-local Transport Models in Crosslight Device Simulators Copyright 2008 Crosslight Software Inc. 1 Introduction Quantization effects Content Self-consistent charge-potential profile. Space

More information

Introduction to Power Semiconductor Devices

Introduction to Power Semiconductor Devices ECE442 Power Semiconductor Devices and Integrated Circuits Introduction to Power Semiconductor Devices Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Semiconductor Devices Applications System Ratings

More information

Quantum Device Simulation. Overview Of Atlas Quantum Features

Quantum Device Simulation. Overview Of Atlas Quantum Features Quantum Device Simulation Introduction Motivation for using Quantum models Overview of Atlas Quantum features Discussion of Quantum models - 2 - Motivation Reduction in device size -> coherence length

More information

Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination

Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination The Metal-Semiconductor Junction: Review Energy band diagram of the metal and the semiconductor before (a)

More information

Understanding. Solid State Physics. Sharon Ann Holgate. CRC Press Taylor & Francis Group Boca Raton London NewYork

Understanding. Solid State Physics. Sharon Ann Holgate. CRC Press Taylor & Francis Group Boca Raton London NewYork Understanding Solid State Physics Sharon Ann Holgate (И CRC Press Taylor & Francis Group Boca Raton London NewYork CRC Press is an imprint of the Taylor & Francis Group, an informa business A TAYLORS FRANCIS

More information

Numerical Approximation Methods for Elliptic Boundary Value Problems

Numerical Approximation Methods for Elliptic Boundary Value Problems Numerical Approximation Methods for Elliptic Boundary Value Problems Olaf Steinbach Numerical Approximation Methods for Elliptic Boundary Value Problems Finite and Boundary Elements Olaf Steinbach Institute

More information

Introduction to Sources: Radiative Processes and Population Inversion in Atoms, Molecules, and Semiconductors Atoms and Molecules

Introduction to Sources: Radiative Processes and Population Inversion in Atoms, Molecules, and Semiconductors Atoms and Molecules OPTI 500 DEF, Spring 2012, Lecture 2 Introduction to Sources: Radiative Processes and Population Inversion in Atoms, Molecules, and Semiconductors Atoms and Molecules Energy Levels Every atom or molecule

More information

Quantum Tunneling and

Quantum Tunneling and BEIJING SHANGHAI Quantum Tunneling and Field Electron Emission Theories Shi-Dong Liang Sun Yat-Sen University, China World Scientific NEW JERSEY LONDON SINGAPORE HONG KONG TAIPEI CHENNAI Contents Preface

More information

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and cross-sectional area 100µm 2

More information

Solid State Physics. GIUSEPPE GROSSO Professor of Solid State Physics, Department of Physics, University of Pavia, and INFM

Solid State Physics. GIUSEPPE GROSSO Professor of Solid State Physics, Department of Physics, University of Pavia, and INFM Solid State Physics GIUSEPPE GROSSO Professor of Solid State Physics, Department of Physics, University of Pisa, and INFM GIUSEPPE PASTORI PARRAVICINI Professor of Solid State Physics, Department of Physics,

More information

Micro-Syllabus of CSIT Physics

Micro-Syllabus of CSIT Physics Micro-Syllabus of CSIT Physics Garcia Narciso, Damask Arthur, Physics for Computer Science Students, Springer-Verlag Reference Books: (B): Heliday David, Resnick Robert and Walker Gearl, Fundamentals of

More information

Chapter 7. The pn Junction

Chapter 7. The pn Junction Chapter 7 The pn Junction Chapter 7 PN Junction PN junction can be fabricated by implanting or diffusing donors into a P-type substrate such that a layer of semiconductor is converted into N type. Converting

More information

ELECTRONS AND PHONONS IN SEMICONDUCTOR MULTILAYERS

ELECTRONS AND PHONONS IN SEMICONDUCTOR MULTILAYERS ELECTRONS AND PHONONS IN SEMICONDUCTOR MULTILAYERS В. К. RIDLEY University of Essex CAMBRIDGE UNIVERSITY PRESS Contents Introduction 1 Simple Models of the Electron-Phonon Interaction 1.1 General remarks

More information

Semiconductor Physics and Devices

Semiconductor Physics and Devices The pn Junction 1) Charge carriers crossing the junction. 3) Barrier potential Semiconductor Physics and Devices Chapter 8. The pn Junction Diode 2) Formation of positive and negative ions. 4) Formation

More information

Harald Ibach Hans Lüth SOLID-STATE PHYSICS. An Introduction to Theory and Experiment

Harald Ibach Hans Lüth SOLID-STATE PHYSICS. An Introduction to Theory and Experiment Harald Ibach Hans Lüth SOLID-STATE PHYSICS An Introduction to Theory and Experiment With 230 Figures Springer-Verlag Berlin Heidelberg New York London Paris Tokyo Hong Kong Barcelona Budapest Contents

More information

R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition. Figures for Chapter 6

R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition. Figures for Chapter 6 R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition Figures for Chapter 6 Free electron Conduction band Hole W g W C Forbidden Band or Bandgap W V Electron energy Hole Valence

More information

Session 6: Solid State Physics. Diode

Session 6: Solid State Physics. Diode Session 6: Solid State Physics Diode 1 Outline A B C D E F G H I J 2 Definitions / Assumptions Homojunction: the junction is between two regions of the same material Heterojunction: the junction is between

More information

Semiconductor Physics

Semiconductor Physics Semiconductor Physics Advanced Texts in Physics This program of advanced texts covers a broad spectrum of topics which are of current and emerging interest in physics. Each book provides a comprehensive

More information

Course Syllabus. offered by Department of Physics and Materials Science with effect from Semester A 2015/16. Introduction to Solid State Physics

Course Syllabus. offered by Department of Physics and Materials Science with effect from Semester A 2015/16. Introduction to Solid State Physics Course Syllabus offered by Department of Physics and Materials Science with effect from Semester A 2015/16 Part I Course Overview Course Title: Introduction to Solid State Physics Course Code: AP3272 Course

More information

smal band gap Saturday, April 9, 2011

smal band gap Saturday, April 9, 2011 small band gap upper (conduction) band empty small gap valence band filled 2s 2p 2s 2p hybrid (s+p)band 2p no gap 2s (depend on the crystallographic orientation) extrinsic semiconductor semi-metal electron

More information

PHASE PORTRAITS OF PLANAR QUADRATIC SYSTEMS

PHASE PORTRAITS OF PLANAR QUADRATIC SYSTEMS PHASE PORTRAITS OF PLANAR QUADRATIC SYSTEMS Mathematics and Its Applications Managing Editor: M. HAZEWINKEL Centre for Mathematics and Computer Science, Amsterdam, The Netherlands Volume 583 PHASE PORTRAITS

More information

Chapter 3 Properties of Nanostructures

Chapter 3 Properties of Nanostructures Chapter 3 Properties of Nanostructures In Chapter 2, the reduction of the extent of a solid in one or more dimensions was shown to lead to a dramatic alteration of the overall behavior of the solids. Generally,

More information

Lecture 8. Equations of State, Equilibrium and Einstein Relationships and Generation/Recombination

Lecture 8. Equations of State, Equilibrium and Einstein Relationships and Generation/Recombination Lecture 8 Equations of State, Equilibrium and Einstein Relationships and Generation/Recombination Reading: (Cont d) Notes and Anderson 2 sections 3.4-3.11 Energy Equilibrium Concept Consider a non-uniformly

More information

Fundamentals of Semiconductor Physics

Fundamentals of Semiconductor Physics Fall 2007 Fundamentals of Semiconductor Physics 万 歆 Zhejiang Institute of Modern Physics xinwan@zimp.zju.edu.cn http://zimp.zju.edu.cn/~xinwan/ Transistor technology evokes new physics The objective of

More information

MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University

MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University Practice Final Exam 1 Read the questions carefully Label all figures

More information

Physics of Classical Electromagnetism

Physics of Classical Electromagnetism Physics of Classical Electromagnetism Minoru Fujimoto Physics of Classical Electromagnetism Minoru Fujimoto Department of Physics University of Guelph Guelph, Ontario Canada, N1G 2W1 Library of Congress

More information

Effective masses in semiconductors

Effective masses in semiconductors Effective masses in semiconductors The effective mass is defined as: In a solid, the electron (hole) effective mass represents how electrons move in an applied field. The effective mass reflects the inverse

More information

Schottky diodes. JFETs - MESFETs - MODFETs

Schottky diodes. JFETs - MESFETs - MODFETs Technische Universität Graz Institute of Solid State Physics Schottky diodes JFETs - MESFETs - MODFETs Quasi Fermi level When the charge carriers are not in equilibrium the Fermi energy can be different

More information

MTLE-6120: Advanced Electronic Properties of Materials. Semiconductor p-n junction diodes. Reading: Kasap ,

MTLE-6120: Advanced Electronic Properties of Materials. Semiconductor p-n junction diodes. Reading: Kasap , MTLE-6120: Advanced Electronic Properties of Materials 1 Semiconductor p-n junction diodes Reading: Kasap 6.1-6.5, 6.9-6.12 Metal-semiconductor contact potential 2 p-type n-type p-type n-type Same semiconductor

More information

THEORY OF MOLECULAR EXCITONS

THEORY OF MOLECULAR EXCITONS THEORY OF MOLECULAR EXCITONS THEORY OF MOLECULAR EXCITONS A. S. Davydov Kiev State University Kiev, USSR Translated from Russian by Stephen B. Dresner g? SPRINGER SCIENCE+BUSINESS MEDIA, LLC 1971 Aleksandr

More information

Atlas III-V Advanced Material Device Modeling

Atlas III-V Advanced Material Device Modeling Atlas III-V Advanced Material Device Modeling Requirements for III-V Device Simulation Blaze as Part of a Complete Simulation Toolset III-V Device Simulation maturity has conventionally lagged behind silicon

More information

Tile-Based Geospatial Information Systems

Tile-Based Geospatial Information Systems Tile-Based Geospatial Information Systems John T. Sample Elias Ioup Tile-Based Geospatial Information Systems Principles and Practices 123 John T. Sample Naval Research Laboratory 1005 Balch Blvd. Stennis

More information

Modern Physics for Scientists and Engineers International Edition, 4th Edition

Modern Physics for Scientists and Engineers International Edition, 4th Edition Modern Physics for Scientists and Engineers International Edition, 4th Edition http://optics.hanyang.ac.kr/~shsong 1. THE BIRTH OF MODERN PHYSICS 2. SPECIAL THEORY OF RELATIVITY 3. THE EXPERIMENTAL BASIS

More information

PN Junction

PN Junction P Junction 2017-05-04 Definition Power Electronics = semiconductor switches are used Analogue amplifier = high power loss 250 200 u x 150 100 u Udc i 50 0 0 50 100 150 200 250 300 350 400 i,u dc i,u u

More information

Blaze/Blaze 3D. Device Simulator for Advanced Materials

Blaze/Blaze 3D. Device Simulator for Advanced Materials Blaze/Blaze 3D Device Simulator for Advanced Materials Contents Introduction: What is Blaze? Purpose: Why use Blaze? Features Application examples Conclusions - 2 - Introduction Blaze/Blaze 3D simulates

More information

Chemistry Instrumental Analysis Lecture 8. Chem 4631

Chemistry Instrumental Analysis Lecture 8. Chem 4631 Chemistry 4631 Instrumental Analysis Lecture 8 UV to IR Components of Optical Basic components of spectroscopic instruments: stable source of radiant energy transparent container to hold sample device

More information

Electronic Devices & Circuits

Electronic Devices & Circuits Electronic Devices & Circuits For Electronics & Communication Engineering By www.thegateacademy.com Syllabus Syllabus for Electronic Devices Energy Bands in Intrinsic and Extrinsic Silicon, Carrier Transport,

More information

Dissipative Ordered Fluids

Dissipative Ordered Fluids Dissipative Ordered Fluids Andr é M. Sonnet Epifanio G. Virga Dissipative Ordered Fluids Theories for Liquid Crystals Andr é M. Sonnet Department of Mathematics and Statistics University of Strathclyde

More information

Lecture 15: Optoelectronic devices: Introduction

Lecture 15: Optoelectronic devices: Introduction Lecture 15: Optoelectronic devices: Introduction Contents 1 Optical absorption 1 1.1 Absorption coefficient....................... 2 2 Optical recombination 5 3 Recombination and carrier lifetime 6 3.1

More information

Multiscale Modeling and Simulation of Composite Materials and Structures

Multiscale Modeling and Simulation of Composite Materials and Structures Multiscale Modeling and Simulation of Composite Materials and Structures Young W. Kwon David H. Allen Ramesh Talreja Editors Multiscale Modeling and Simulation of Composite Materials and Structures Edited

More information

Solid State Electronics. Final Examination

Solid State Electronics. Final Examination The University of Toledo EECS:4400/5400/7400 Solid State Electronic Section elssf08fs.fm - 1 Solid State Electronics Final Examination Problems Points 1. 1. 14 3. 14 Total 40 Was the exam fair? yes no

More information