600 Index. cut-off wavelength, 2 CXT formula, 208, 252, 358, 425 cystallography, 227 Czochralski technique, 54
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1 Index A ab initio calculation, 514 absorption coefficient, 114, 200 absorption edge, 197, 279 absorption spectroscopy, 246 accelerating crucible rotation technique (ACRT), 68 acoustic branch, 510 acoustics phonon scattering, 417 ACRT-THM, 72 adiabatic bond-charge model, 514, 522, 525 Anderson model, 288 atomic displacement (AD), 581 Auger electron spectroscopy (AES), 100 augmented plane-wave (APW), 152 B band tail, 283 Berstein-Moss factor, 276 Bessel function, 429 blackbody, 105 ideal blackbody, 105 Bloch function, 151, 161 Bloch theorem, 227 Bohr magneton, 471 Boltzmann constant, 43 Boltzmann distribution, 411, 432 Boltzmann equation, 410, 492 Boltzmann gain loss equation, 411 Boltzmann transport equation, 328 bond charge (BC), 522 bonding coefficient, 515 Born approximation, 425 Born-Oppenheimer adiabatic approximation, 151 Bose-Einstein factor, 276 bowing term, 209 Bragg angle, 116 Bragg formula, 128 Bridgman technique, 62 Bridgman-Stockbarger technique, 62 Brillouin zone, 2 first Brillouin zone, 22 Brooks-Herring theory, 429 Brout sum rule, 553, 557 Burstein-Moss offset, 292 C carrier density, 99 carrier freeze-out, 477 carrier lifetime, 1 carrier transport, 2 Clapeyron equation, 26 Clausius statement, 24 complex dielectric function, 239 compositional uniformity, 268 conductivity, 410 conductivity tensor, 430 constant-q technique, 513 cooling rate, 88 Coulomb coefficient, 515 Coulomb interaction, 151, 523 Coulomb potential, 151 covalent binding, 155 CPA, 421, 427 crystal growth, 23 crystal potential, 158 crystal symmetry, 170 cubic symmetry group, 172
2 600 Index cut-off wavelength, 2 CXT formula, 208, 252, 358, 425 cystallography, 227 Czochralski technique, 54 D damping constant, 242 Darwin interaction term, 164 Debye length, 426 density functional theory, 1 density of states (DOS), 254, 557 dielectric function, 239 differential scanning calorimeter (DSC), 132 diffusion coefficient, 30 Dingle temperature, 473, 483 Dirac relativistic formula, 157, 164 dislocation density, 98, 125 dispersion, 246 double group, 176 double-crystal diffraction curve, 118 double-crystal measurement, 118 double-crystals rocking curves (DCRC), 116 double-layer heterojunction (DLHJ), 93 drift velocity, 492, 502 dynamic equilibrium, 32 E effective donor concentration, 321 effective electron mass, 1 effective Lande factor, 471 effective medium approximation (EMA) model, 315 Ehrenfest equation, 27 eigen function, 162 eigen value, 162 electron effective mass, 212 electron mobility, 1 electron-hole scattering, 417 electron-phonon interaction, 206 ellipsometric parameter, 113 empirical pseudopotential, 152 energy band parameter, 195 energy band structure, 152 energy gap, 197 energy-dispersive x-ray spectroscopy, 128 etch pits density (EPD), 121 eutectic region, 38 Ewald sphere, 102 exciton-phonon interaction, 283 exponential absorption region, 247 F far infrared Fourier transform spectrometer (FTIR), 339 far-infrared (FIR), 546 Fermi distribution, 387, 411, 432 Fermi energy level, 388 Fermi level, 385 Fermi-Dirac distribution, 385, 425 Fermi-Dirac integral, 389, 495 Fermi-Dirac statistic, 385 Fermion particle, 411 ferroelectric thin film, 10 Fick s laws, 29 Fick s first law, 70 Finkman formula, 375 FIR transmission, 546 Fixed Polarizer, Rotating Polarizer, and Rotating Analyzer (FPRPRA), 303 float zone method, 72 Fourier coefficient, 300 Fourier transform, 151 Frankel defect, 138 Franz-Keldysh effect, 252 free carrier absorption, 247, 328 free carrier absorption region, 247 freezing process, 48 Fresnel equation, 113 Fröhlich interaction, 419, 581 full width at half maximum (FWHM), 116 G Gibbs free energy, 26 Golden Rule, 277
3 Index 601 gradient of temperature, 29 graphical method, 399 Green s function method, 152 H half-melt technique, 68 half-melting, 62 Hall coefficient, 395, 436 Hall Effect, 424 Hall factor, 437 Hall mobility, 416, 470 Hall resistivity, 436 Hall voltage, 436 Hall-effect measurement, 93 Hamiltonian, 164 Hartree-Fock approximation, 151 heavy hole band, 185, 265 heavy hole effective mass, 195, 216 Helmholtz free energy, 25 Hg interstitial, 136 Hg vacancy, 141 Hg-rich solvent LPE, 92 HgTe-rich solution, 93 high-frequency dielectric constant, 269 hot electron, 496 hot electron effect, 496 hot phonon, 500 HPTB, 421 HSC formula, 252 Hybrid Mixed Conduction Analysis (HMCA), 459 hybrid psudopotential-tight-binding theory (HPTB), 1, 421 I impurity energy level, 283 inclusion, 131 indirect interband transition, 266 inelastic neutron scattering (INS), 511 inelastic X-ray scattering (IXS), 511 infrared absorption spectra, 357 Infrared detector, 2 infrared focal plane arrays (IRFPAs), 76 infrared spectroscopic ellipsometry, 305 infrared transmission spectra, 366 in-situ doping, 99 interband transition, 197 interference fringe method, 306 interference matrix method, 374 interlayer force constant method, 553, 557 internal energy, 25 intrinsic absorption band, 285 intrinsic absorption region, 247 intrinsic optical absorption, 197 intrinsic semiconductor, 442 ion implantation, 296 ion-bc interaction, 523 ionization, 404 irreducible representation, 172 isobaric process, 25 isothermal process, 25 isovolumetric process, 25 iterative approximation method, 458 J Jacobi iterative procedure, 459 joint density of states, 264 Jones matrix, 298 K k p formalism, 161 k p interaction, 154 k p method, 234 k p perturbation, 161 k p perturbation method, 152 k P perturbation theory, 2 Kane model, 285, 474 Kane region, 285 Kane theory, 154 Keating potential, 525 Kelvin-Plank statement, 24 KKR method, 153 Kramers-Kronig (KK) relation, 242, 309, 562 Kucera formula, 376
4 602 Index L Landau cyclotron radius, 496 Landau energy band, 471 Landau level, 455, 470 Landau sub-band, 470, 478 lattice constant, 19, 155 Lattice Vibration, 515 lattice vibration characteristic, 3 lattice-matched alloy, 20 lattice-mismatched alloy, 20 Laue diffraction equation, 101 law of mass action, 400, 403 light hole band, 265 linearized muffin tin approximation (LMTO), 138 Liquid Phase Epitaxy, 6 liquid phase epitaxy (LPE), 6 horizontal sliding LPE, 79 tipping LPE, 77 vertical dipping LPE, 88 liquidus line, 41 longitudinal compositional distribution, 366 longitudinal magneto-resistance, 443, 475, 477, 478, 482, 486, 488, 489, 491 longitudinal optical branch (LO), 519 loop glue method, 267 Lorentz force, 347 Lorentz force law, 412, 436 Lorentzian oscillator, 529 low-frequency absorption band, 554 M Madelung constant, 525 magnetic freeze-out phenomena, 451 magnetic plasma reflection, 197 magneto-optic effect, 3 magneto-optical experiment, 199 magneto-resistance effect, 441 magneto-resistance oscillation, 470 magneto-transport, 445 many-body problem, 151 mass-transfer equilibrium, 32 mass-velocity interaction term, 164 Maxwell-Boltzmann distribution, 433, 496 Maxwell-Boltzmann distribution function, 387 MBE growth, 97 mean free path, 416 Metal Organic Chemical Vapor Deposition (MOCVD), 6, 76 metallographic microscopy, 128 micro-photoluminescence, 595 mixed-conduction approximation, 452 Mobility spectrum analysis (MSA), 456 molecular beam epitaxy (MBE), 6, 95 Molecular Beam Epitaxy (MBE), 95 molecular CPA (MCPA), 284 momentum matrix element, 195, 220 momentum relaxation time, 413, 492, 502 momentum-energy conservation laws, 511 monatomic chain, 507 Moss-Burstein shift (MB effect), 317 multi-carrier fitting procedure (MCF), 452 multi-carrier system, 448 multi-mode model of lattice vibration, 531 multiphase equilibrium, 33 N Narrow gap semiconductor, 1 Nathan s expression, 292 native point defect, 136 Newton equation, 507 non-parabolic band, 185 normal freezing, 48
5 Index 603 O occupation number, 430 Ohm s law, 493 optical branch, 510 optical constant, 114, 296 optical phonon scattering, 417 optical property, 3 orthogonalized plane-wave (OPW), 152 orthonormal local orbital (OLO), 276 P Pauli exclusion principle, 385 Peltier effect, 59 phase diagram, 34 phase diagram of HgTe-CdTe, 40 phase diagram of InSb, 59 phase equilibrium, 32 phase transformation, 32 phonon absorption region, 247 phonon dispersion, 510 phonon spectra, 514 phonon-assisted absorption, 275 photoconductive, 198 photoconductive device, 1 photo-electronic excitation, 2 photon-plasmon coupling, 540 photovoltaic, 198 photovoltaic device, 1 piezoelectric scattering, 417 Planck equation, 105 plasmon oscillation, 537 p-n junction, 294 polariton, 537 polarizability, 559 precipitated phase, 130 primitive lattice vector, 227 Proportional Integral Derivative (PID), 56 pseudo-binary semiconductor, 3 pulling technique, 54 Q quantitative mobility spectrum analysis (QMSA), 459 quantum effect, 470 quantum Hall effect, 452 quantum limit, 476, 477 quasi-elastic approximation, 507 R RAE (rotating analyzer ellipsometer), 299 Raleigh coefficient, 31 Raleigh constant, 30 Raman scattering, 559, 587 micro-raman scattering, 595 Raman tensor, 579 reciprocal lattice vector, 102, 170, 229 recursion method, 374 reduced-conductivity-tensor scheme (RCT), 452 reflectance spectroscopy, 246 reflected high-energy electron diffraction (RHEED), 99 Reflection Spectra, 528 refraction index, 245 refractive index, 246 relaxation time, 328 residual impurities, 421 RHEED, 97 rigid-ion model, 514 rocking curve, 118, 124 root mean square (rms), 365 rotating analyzer and polarizer (RAP), 302 Rutherford backscattering spectroscopy (RBS), 135 S sample-glue-substrate structure, 269 scanning electron microscopy (SEM), 127 scanning ion-beam mass spectroscopy (SIMS), 126 scattering cross section, 568 Schrödinger equation, 151, 161, 386 SdH effect, 488 second order perturbation, 188
6 604 Index second order phase transition, 27 secondary ion mass spectroscopy (SIMS), 100 segregation coefficient, 42 effective segregation coefficient, 57 selection rule, 170, 578 shell model, 514, 515 Shockley s graphical method, 400 short range correlation, 158 Shubnikov-de Haas (SdH) effect, 451 Shubnikov-de Haas (SdH) oscillation, 478 SIMS (secondary ion mass spectroscopy), 366 single group, 175 S-L coupling, 166 solid re-crystallization, 54 Solid state re-crystallizing, 72 solidus phase line, 41 spectroscopic ellipsometry, 296 in situ spectroscopic ellipsometry, 111 spin splitting, 475, 489 spin-orbit interaction, 154 spin-orbit interaction term, 164 spin-orbit split band, 185 spin-orbit split-off band, 158 spin-orbit splitting, 195, 216 square root rule, 287, 296 state population distribution, 430 Stefan-Boltzmann law, 105 structure factor, 116 Subnikov-de Hass effect, 197 super-cooling, 28 compositional super-cooling, 52 super-saturation, 28 surface electric field (SF), 581 surface morphology, 127, 128 Szigeti charge, 518 T Te interstitial, 136 Te solvent, 54 Te solvent technique, 68 Te vacancy, 141 Te-rich solution, 91 ternary semiconductor, 209 the thermodynamic degrees of freedom, 33 the third law of thermodynamics, 24 thermal equilibrium, 32 thermal-neutron-absorption crosssection, 513 thermodynamics, 23 tight-binding, 152 transition matrix element, 255 transition probability, 277 transmission electron microscopy (TEM), 126 transmission spectra, 546 transport process, 3 transverse compositional uniformity, 361 transverse magneto-resistance, 472, 473, 475, 478, 489, 491 transverse optical branch (TO), 519 traveling hot-zone method (THM), 72 two-mode model of lattice vibrations, 528 two-phonon process, 549 U ultraviolet photo-electronic spectroscopy (UPS), 100 Urbach absorption law, 367 Urbach exponential rule, 280 Urbach rule, 284 V Van der Pauw configuration, 462, 465 Van der Pauw method, 446, 462, 465, 469 vertical LPE method (VLPE), 92 virtual crystal approximation (VCA), 158, 208 void, 128
7 Index 605 W Wannier function, 152 weighing technique, 58 Wien s Law, 105 Wigner-Seitz primitive cell, 228 X X-ray backscattering spectrometer, 511 X-ray double-crystal diffraction, 116 X-ray electron spectroscopy (XPS), 100 x-ray topological morphology (XRT), 127 Z zincblende cubic structure, 19 zone melting, 48
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